CN104143573A - Optical switch element and display panel - Google Patents
Optical switch element and display panel Download PDFInfo
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- CN104143573A CN104143573A CN201310166640.5A CN201310166640A CN104143573A CN 104143573 A CN104143573 A CN 104143573A CN 201310166640 A CN201310166640 A CN 201310166640A CN 104143573 A CN104143573 A CN 104143573A
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- 230000003287 optical effect Effects 0.000 title abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 229910044991 metal oxide Inorganic materials 0.000 claims description 17
- 150000004706 metal oxides Chemical class 0.000 claims description 17
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical group [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 239000011701 zinc Substances 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 109
- 239000010409 thin film Substances 0.000 description 19
- 230000001678 irradiating effect Effects 0.000 description 18
- 238000000034 method Methods 0.000 description 16
- 239000000463 material Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 206010070834 Sensitisation Diseases 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 230000008313 sensitization Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
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- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000003365 glass fiber Substances 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000023077 detection of light stimulus Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000037230 mobility Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
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- 230000005855 radiation Effects 0.000 description 1
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- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- -1 silicon oxide compound Chemical class 0.000 description 1
- YSRUGFMGLKANGO-UHFFFAOYSA-N zinc hafnium(4+) indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[In+3].[Hf+4] YSRUGFMGLKANGO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention discloses an optical switch element and a display panel. The optical switch element comprises a grid electrode, a channel layer, at least one dielectric layer, a first electrode and a second electrode. The grid electrode is arranged on a substrate, and the channel layer is arranged on the substrate and is an oxide semiconductor. The dielectric layer is arranged between the grid electrode and the channel layer. The first electrode is arranged on the channel layer and makes contact with the channel layer. The second electrode is arranged on the channel layer and makes contact with the channel layer, so that a contact area is arranged between the second electrode and the channel layer. An interval is reserved between the second electrode and the first electrode. An offset distance is formed between the contact area and the grid electrode.
Description
Technical field
The invention relates to a kind of switching element and there is a display floater of this switching element.
Background technology
Flat display apparatus (flat panel display apparatus), such as liquid crystal indicator or the advantage such as organic light-emitting display device is low with its power consumption, caloric value is few, lightweight and non-radiation type, be used in electronic product miscellaneous, and little by little replace traditional cathode ray tube (cathode ray tube, CRT) display unit.
Wherein, thin-film transistor (thin film transistor, TFT) be applied in widely in various high-order display unit, size and resolution lifting due to display unit, the demand of display color saturation increases fast, also increases the requirement to thin-film transistor electrical performance and stability simultaneously.Metal-oxide semiconductor (MOS) (Metal oxide semiconductors, MOSs) thin-film transistor has good electric current output characteristic, lower leakage current with higher than amorphous silicon (amorphous silicon, a-Si) ten times of above electron mobilities of thin-film transistor, therefore can reduce the power consumption and the frequency of operation that promotes display unit of display unit, have an opportunity to replace traditional amorphous silicon film transistor, become the driving element of main flow in the display in next epoch.
In addition, existing a kind of optical inductor is comprised of a photodiode and a transistor, therefore, if make optical inductor when (or claiming Photosensing Units) in the thin-film transistor technique of display floater, will introduce other material and increase the cost of technique, also can increase complexity and the unsteadiness of display floater technique.
Therefore, how to propose a kind of detection and whether be subject to switching element and the display floater that light irradiates, also switching element can be integrated in the technique of display floater, and then promote the surcharge of display floater, become one of important topic.
Summary of the invention
Object of the present invention is for providing a kind of detection whether to be subject to switching element and the display floater that light irradiates.In another object of the present invention, also switching element can be integrated in the technique of display floater, and then promote the surcharge of display floater.
For reaching above-mentioned purpose, according to a kind of switching element of the present invention, comprise a grid, a channel layer, at least one dielectric layer, one first electrode and one second electrode.Grid is arranged on substrate.Channel layer is arranged on substrate, and channel layer is monoxide semiconductor.Dielectric layer is arranged between grid and channel layer.The first electrode is arranged on channel layer, and contacts with channel layer.The second electrode is arranged on channel layer, and contacts with channel layer and have a contact zone, between the second electrode and the first electrode, has an interval.On the projecting direction of switching element, between contact zone and grid, there is an offset distance.
For reaching above-mentioned purpose, according to a kind of display floater of the present invention, comprise at least one switching element, switching element has a grid, a channel layer, at least one dielectric layer, one first electrode and one second electrode.Grid is arranged on substrate.Channel layer is arranged on substrate, and channel layer is monoxide semiconductor.Dielectric layer is arranged between grid and channel layer.The first electrode is arranged on channel layer, and contacts with channel layer.The second electrode is arranged on channel layer, and contacts with channel layer and have a contact zone, between the second electrode and the first electrode, has an interval.On the projecting direction of switching element, between contact zone and grid, there is an offset distance.
In one embodiment, oxide semiconductor comprises a metal oxide, and metal oxide comprise indium, zinc, gallium, tin and hafnium at least one of them.
In one embodiment, a median plane of grid extend through channel layer, it is asymmetric that channel layer is positioned at the structure of median plane both sides.
In one embodiment, offset distance is between 2 microns to 20 microns.
In one embodiment, switching element can sensing one light, and the wavelength of light is between 0.01 nanometer to 500 nanometer.
From the above, because display floater of the present invention comprises at least one switching element, the grid of switching element is arranged on substrate, and channel layer is arranged on substrate, and channel layer is monoxide semiconductor, and dielectric layer is arranged between grid and channel layer.In addition, the first electrode is arranged on channel layer, and contacts with channel layer, and the second electrode is arranged on channel layer, and contacts with channel layer and have a contact zone.In addition,, on the projecting direction of switching element, between contact zone and grid, there is an offset distance.By this, the present invention can make the driving element of switching element and display floater use same thin film transistor technique to make, therefore switching element can be integrated in the technique of display floater, therefore not only can not introduce other material and increase the cost of technique, also can promote the surcharge of display floater.
Accompanying drawing explanation
Accompanying drawing described herein is used to provide a further understanding of the present invention, forms the application's a part, does not form limitation of the invention.In the accompanying drawings:
Figure 1A is the cross-sectional schematic of a kind of switching element of preferred embodiment of the present invention.
Figure 1B is in Figure 1A, the relative position schematic diagram of the grid of switching element, channel layer, the first electrode and the second electrode.
Fig. 2 A and Fig. 3 A are respectively the cross-sectional schematic of switching element of the different aspects of preferred embodiment of the present invention.
Fig. 2 B is in Fig. 2 A, and Fig. 3 B is in Fig. 3 A, the relative position schematic diagram of the grid of switching element, channel layer, the first electrode and the second electrode.
Fig. 4 A and Fig. 4 B are respectively in switching element of the present invention, under different offset distances, and the performance diagram of grid voltage and drain current.
Fig. 5 A be switching element of the present invention in applying under bias state, in irradiating ultraviolet light during with irradiating ultraviolet light not, the variation schematic diagram of its drain current and time.
Fig. 5 B be switching element of the present invention in applying under bias state, when irradiating blue light and not irradiating blue light, the variation schematic diagram of its drain current and time.
Drawing reference numeral explanation:
1,1a, 1b: switching element
11: substrate
12: grid
13: channel layer
14: the first electrodes
15: the second electrodes
16,161,162: dielectric layer
17: etch stop layer
C1, C2: contact zone
D1: distance
D2: offset distance
H1～H4: through hole
L: median plane
Embodiment
Hereinafter with reference to correlative type, illustrate according to the switching element of preferred embodiment of the present invention and there is the display floater of switching element, wherein identical element is illustrated the reference marks with identical.In addition, the diagram of all enforcement aspects of the present invention is signal just, does not represent full-size(d) and ratio.
Please refer to shown in Figure 1A and Figure 1B, wherein, Figure 1A is the cross-sectional schematic of a kind of switching element 1 of preferred embodiment of the present invention, and Figure 1B is in Figure 1A, the relative position schematic diagram of the grid 12 of switching element 1, channel layer 13, the first electrode 14 and the second electrode 15.Wherein, switching element 1 has the thin-film transistor structure of lower grid (bottom gate), and can use thin-film transistor technique to make.
Switching element 1 comprises a substrate 11, a grid 12, a channel layer 13, one first electrode 14 and one second electrode 15.In addition, switching element 1 more comprises a dielectric layer 16.
On the implementation, substrate 11 can be the material of a light-permeable, be for example glass, quartz or analog, plastic cement, rubber, glass fibre or other macromolecular materials, preferably can be a borate alkali-free glass substrate (alumino silicate glass substrate).In addition, substrate 11 also can be a lighttight material, for example, be metal-glass fiber composite plate, metal-ceramic composite plate.In addition, substrate 11 also can be a flexible base plate, looks closely design requirement.
Grid 12 is arranged on substrate 11, and the material of grid 12 is for example the single or multiple lift structure that metal (for example aluminium, copper, silver, molybdenum, titanium) or its alloy form.Part drives the wire of signal in order to transmission, can use and the structure of grid 12 with layer and same technique, is electrical connected each other, for example scan line (scan line).In addition, in the present embodiment, dielectric layer 16 is arranged on grid 12, and between grid 12 and channel layer 13, and dielectric layer 16 can be organic material as organic silicon oxide compound, or inorganic is as the sandwich construction of silicon nitride, silica, silicon oxynitride, carborundum, aluminium oxide, hafnium oxide or above-mentioned material.In this, the complete cover gate 12 of dielectric layer 16, and can select part or all of covered substrate 11.
Channel layer 13 is arranged on substrate 11, and sandwiched dielectric layer 16 between channel layer 13 and grid 12.In this, channel layer 13 is arranged on dielectric layer 16 with respect to the position of grid 12.On the implementation, channel layer 13 comprises monoxide semiconductor.Wherein, aforesaid oxide semiconductor comprises metal oxide, and metal oxide comprise indium, zinc, gallium, tin and hafnium at least one of them, or other material.Wherein, oxide semiconductor is for example and without limitation to indium oxide gallium zinc, indium oxide hafnium zinc, zinc oxide or indium oxide, if energy gap (Energy Gap) the metal oxide semiconductor material of 3～4 electron-volts (eV) all can, the present invention is not particularly limited.Because of metal-oxide semiconductor (MOS) quite large to the susceptibility of light, when light is irradiated to the metal-oxide semiconductor (MOS) of channel layer, can make the electronics electricity hole (hole) of channel layer to increasing, by reading the difference of the signal strength signal intensity after light pre-irradiation, the whether sensitization of distinguishable element.Therefore, switching element 1 is to utilize this characteristic to be used as a photoinduction element.
The first electrode 14 and the second electrode 15 are arranged at respectively on channel layer 13, and the first electrode 14 contacts with channel layer 13 respectively with the second electrode 15.Wherein, in the channel layer 13 of thin-film transistor, not during conducting, refer in thin-film transistor and do not execute under biased situation, channel layer 13 is not switched on, the first electrode 14 and the second electrode 15 both be electrically separated.Wherein, if the first electrode 14 source electrodes (Source), the second electrode 15 is drain electrode (Drain); Otherwise if the first electrode 14 drain electrodes, the second electrode 15 is source electrode.In this, be take the first electrode 14 as drain electrode, and the second electrode 15 for source electrode be example.In addition, the material of the first electrode 14 and the second electrode 15 can be the single or multiple lift structure that metal (for example aluminium, copper, silver, molybdenum, titanium) or its alloy form.In addition, between the first electrode 14 and the second electrode 15, there is an interval.Wherein, part drives the wire of signal in order to transmission, can use with the first electrode 14 and the second electrode 15 with layer and the structure of same technique, for example data wire (data line).In addition, in the present embodiment, as shown in Figure 1A and Figure 1B, the first electrode 14 has a contact zone C1 with channel layer 13, and the second electrode 15 has a contact zone C2 with channel layer 13.
Again one carry be, the present embodiment is to be directly arranged on channel layer 13 with the first electrode 14 and the second electrode 15, and contact as example with channel layer 13, yet, as shown in Figure 2 A and 2 B, under other technology mode, switching element 1a more can comprise that an etching stops (etch stop) layer 17, etch stop layer 17 is arranged on channel layer 13, and the first electrode 14 contacts with channel layer 13 from a through hole H1, the H2 of etch stop layer 17 respectively with one end of the second electrode 15.In other words, the first electrode 14 contacts with channel layer 13 by through hole H1, and the second electrode 15 contacts with channel layer 13 by through hole H2, and the first electrode 14 contacts part by through hole H1 with channel layer 13 and is contact zone C1, and contacting part by through hole H2 with channel layer 13, the second electrode 15 is contact zone C2.Wherein, etch stop layer 17 can be individual layer inorganic as the sandwich construction of silicon nitride, silica, silicon oxynitride, carborundum, aluminium oxide, hafnium oxide or above-mentioned material.Etch stop layer 17 also can be organic insulation layer material, for example organosilicon oxygen compound.
In addition, switching element 1 more can comprise a protective layer (figure end shows), and protective layer is arranged on the first electrode 14 and the second electrode 15.In this, protective layer can be protected switching element 1(or 1a), avoid being subject to extraneous aqueous vapor or foreign matter and affect it acting on.
Shown in Figure 1A and Figure 1B, on the projecting direction of switching element 1, (also can be considered and overlook direction), be also about to switching element 1 projection on substrate 11 time, not overlapping and there is a skew (offset) distance D 2 between contact zone C2 and grid 12.In other words, on the projecting direction of switching element 1, contact zone C2 is separated and not overlapping with grid 12, and has offset distance D2 between the two.Wherein, offset distance D2 can be between 2 microns (μ m) be to 20 microns, and preferably is 6～10 microns.In addition,, on the projecting direction of switching element 1, the first electrode 14 and grid 12 have overlapping, and have a distance D 1 between the edge of contact zone C1 and the edge of grid 12.
In addition, grid 12 has a median plane L, with respect to the grid 12 of the both sides of median plane L, is symmetrical structure.In addition, the extension of median plane L can be passed channel layer 13, and channel layer 13 to be positioned at the structure of median plane L both sides asymmetric.In other words, channel layer 13 is for the median plane L of grid 12, and it is asymmetric structure, that is the length of the channel layer 13 of median plane L both sides is not identical.In this, as shown in Figure 1B, the channel layer 13 in the right side of median plane L is greater than the channel layer 13 in left side.Except channel layer 13 for the median plane L of grid 12 for asymmetric structure, the first electrode 14, the second electrode 15 and etch stop layer 17 are also respectively asymmetric structure for the median plane L of grid 12.
Then, please refer to Fig. 3 A and Fig. 3 B, wherein, Fig. 3 A is the cross-sectional schematic of the switching element 1b of the different aspects of one embodiment of the invention, and Fig. 3 B is in Fig. 3 A, the relative position schematic diagram of grid 12, channel layer 13, first electrode 14 and second electrode 15 of switching element 1b on projecting direction.
Switching element 1b and switching element 1 are compared, its difference is: switching element 1b has the thin-film transistor structure of upper grid (top gate), therefore, grid 12 is positioned on channel layer 13, and between grid 12 and channel layer 13, sequentially has two dielectric layers 161,162.In addition, dielectric layer 161 has two through hole H3, H4, and the first electrode 14 is contacted with channel layer 13 and is had a contact zone C1 by through hole H3, and the second electrode 15 contacts with channel layer 13 by through hole H4 and has a contact zone C2, similarly, switching element 1b in projection on the projecting direction of substrate 11, not overlapping and there is an offset distance D2 between the same and grid 12 of contact zone C2.
Below, light sensing principle and the characteristic (switching element 1,1b have identical principle and characteristic thereof) thereof of the switch element 1a of Mingguang City with the switching element 1a of Fig. 2 A and Fig. 2 B and the diagram of correspondence.
Please, respectively with reference to shown in Fig. 4 A and Fig. 4 B, it is respectively in switching element 1a of the present invention, under different offset distance D2, and the performance diagram of grid voltage (V) and drain electrode (i.e. the first electrode 14) electric current (A).In Fig. 4 A, dark apart from 6/3() represent, the offset distance D2 of Fig. 2 B is 6 microns, and distance D 1 is 3 microns, and switching element 1a is when irradiation not, the characteristic curve of its grid voltage and drain current.In addition, bright apart from 6/3() represent, the offset distance D2 of Fig. 2 B is 6 microns, and distance D 1 is 3 microns, and switching element 1a (for example irradiating ultraviolet light UV, wavelength 375nm) when irradiation, the characteristic curve of its grid voltage and drain current.In addition, in Fig. 4 B, dark apart from 8/3() represent, the offset distance D2 of Fig. 2 B is 8 microns, and distance D 1 is 3 microns, and switching element 1a is when irradiation not, the characteristic curve of its grid voltage and drain current.In addition, bright apart from 8/3() represent, the offset distance D2 of Fig. 2 B is 8 microns, and distance D 1 is 3 microns, and switching element 1a (for example irradiating ultraviolet light UV, wavelength 375nm) when irradiation, the characteristic curve of its grid voltage and drain current.
As shown in Fig. 4 A and Fig. 4 B, because the second electrode 15 of switching element 1a is on the projecting direction of switching element 1a, not overlapping and there is offset distance D2 between the contact zone C2 that it contacts with channel layer 13 and grid 12, therefore, the output current characteristic of switching element 1a will be along with the increase of offset distance D2, channel layer 13(metal-oxide semiconductor (MOS)) apart from grid 12 controlled ranges, more and more far present the situation that is more and more difficult for conducting, so under same light illuminate condition and electrical condition, not overlapping region between contact zone C2 and grid 12 cannot effectively be controlled by the voltage of grid 12, and between source electrode and drain electrode, the throughput of electric current can be more and more less along with the increase of offset distance D2.So when irradiation light not, though input grid 12 voltages still cannot effectively be controlled switching element 1a, namely have no idea to allow enough electric currents by the first electrode 14 and the second electrode 15, as shown in the not irradiation curve of Fig. 4 B.
But, as bright in the distance 6/3(of Fig. 4 A and Fig. 4 B) and bright apart from 8/3() curve as shown in, metal-oxide semiconductor (MOS) area illumination light in offset distance D2, during the metal-oxide semiconductor (MOS) irradiation light of the not overlapping region namely and between contact zone C2 and grid 12, under identical grid 12 voltages, because metal-oxide semiconductor (MOS) can produce a large amount of electronics electricity holes pair when the irradiation, electric current can pass through the region (nonoverlapping region) of this offset distance D2, and then drain current is increased significantly.In the present embodiment, the nmos pass transistor that applies positive voltage between grid 12 and drain electrode of take is example, but, when other embodiment, when PMOS transistor, can apply the bias voltage of negative voltage, looks closely transistorized kind and determines.
In addition, please respectively with reference to shown in Fig. 5 A and Fig. 5 B, wherein, Fig. 5 A is that switching element 1a of the present invention is in applying under bias state, in irradiating ultraviolet light (375nm) during with irradiating ultraviolet light not, the variation schematic diagram of its drain current and time, and Fig. 5 B is switching element 1a of the present invention when irradiating blue light (470nm) and not irradiating blue light, the variation schematic diagram of its drain current and time.Therefore, when measuring, the voltage of grid 12 is fixed as 2 volts, and the voltage of drain electrode is fixed as 10 volts.
As shown in Figure 5A, when switching element 1a is under applying bias state and during irradiating ultraviolet light, the drain current of its output has increased by 10 during approximately than irradiating ultraviolet light not
4～10
5doubly, and after ultraviolet light is closed, drain current is also promptly got back to reset condition, therefore, the state of the difference interpretation sensitization at an easy rate by drain current, switching element 1a during namely by irradiation, have the higher electric current difference characteristic that only reduced-current passes through when with irradiation not to control, therefore can become good optical switch or an OPTICAL SENSORS.In addition, as shown in Figure 5 B, switching element 1a is when irradiating blue light and not irradiating blue light, and its drain current still has notable difference, and its difference ratio approximately has 10～100 times.In addition,, compared to irradiating blue light, the drain current of switching element 1a when irradiating ultraviolet light has the drain current being greater than while irradiating blue light to approach 10
3notable difference doubly, therefore can be applicable to differentiate the design of irradiating different wave length light.
In addition, a kind of display floater of preferred embodiment of the present invention comprises at least one switching element, and switching element has a grid, a channel layer, at least one dielectric layer, one first electrode and one second electrode.Grid is arranged on substrate.Channel layer is arranged on substrate, and channel layer is monoxide semiconductor.Dielectric layer is arranged between grid and channel layer.The first electrode is arranged on channel layer, and contacts with channel layer.The second electrode is arranged on channel layer, and contacts with channel layer and have a contact zone, between the second electrode and the first electrode, has an interval.On the projecting direction of switching element, between contact zone and grid, there is an offset distance.Wherein, this switching element can be one of them of above-mentioned switching element 1,1a, 1b, and switching element 1,1a, 1b in above-mentioned middle detailed description, repeat no more.In actual fabrication, when switching element is while being a plurality of, a plurality of switching elements can be made on same substrate.
Display floater of the present invention can be a display panels or an organic LED display panel.Wherein, if during display panels, switching element can be made in display floater on one of them substrate in two substrates, in this, do not limit switching element is arranged to thin film transistor base plate or colored filter substrate, or be arranged on the substrate that chromatic filter layer is positioned at thin film transistor base plate side (color filter on array).In an embodiment, switching element can be made on thin film transistor base plate.The driving element of switching element and thin film transistor base plate can be used same thin film transistor technique to make, and makes display panels except having the function of picture disply, also has the function of light sensing or optical switch.In addition, if display floater is organic LED display panel, switching element can be made on organic LED display panel.The driving element of switching element and Organic Light Emitting Diode substrate can be used same thin film transistor technique to make, and makes organic LED display panel except having the function of picture disply, also has the function of light sensing or optical switch.Certainly, if display floater the present invention to switching element when a contact panel is combined, in conjunction with after touch-control display panel except thering is the function of demonstration, touch-control, also can there is the function of light sensing.
In addition, Photosensing Units of the present invention and display floater can be applicable to any electronic equipment, for example the light of the sensitization detection of light detection, clock and watch or the wrist-watch of TV, the ultraviolet light of Medical Devices or the detection of X-ray, electronics Game device or 3C Product detects, or other can detect light with on the electronic equipment of controlling.
In sum, because display floater of the present invention comprises at least one switching element, the grid of switching element is arranged on substrate, and channel layer is arranged on substrate, and channel layer is monoxide semiconductor, and dielectric layer is arranged between grid and channel layer.In addition, the first electrode is arranged on channel layer, and contacts with channel layer, and the second electrode is arranged on channel layer, and contacts with channel layer and have a contact zone.In addition,, on the projecting direction of switching element, between contact zone and grid, there is an offset distance.In addition, the present invention can make the driving element of switching element and display floater use same thin film transistor technique to make, therefore switching element can be integrated in the technique of display floater, therefore not only can not introduce other material and increase the cost of technique, also can promote the surcharge of display floater.
The foregoing is only illustrative, but not be restricted person.Anyly do not depart from spirit of the present invention and category, and the equivalent modifications that it is carried out or change all should be contained in the application's the scope of the claims.
Claims (10)
1. a switching element, is characterized in that, comprising:
One substrate;
One grid, is arranged on described substrate;
One channel layer, is arranged on described substrate, and described channel layer is monoxide semiconductor;
At least one dielectric layer, is arranged between described grid and described channel layer;
One first electrode, is arranged on described channel layer, and contacts with described channel layer; And
One second electrode, be arranged on described channel layer, and contact and there is a contact zone with described channel layer, between described the second electrode and described the first electrode, there is an interval, on the projecting direction of described switching element, between described contact zone and described grid, there is an offset distance.
2. switching element according to claim 1, is characterized in that, described oxide semiconductor comprises a metal oxide, and described metal oxide comprise indium, zinc, gallium, tin and hafnium at least one of them.
3. switching element according to claim 1, is characterized in that, described grid one median plane extend through described channel layer, it is asymmetric that described channel layer is positioned at the structure of described median plane both sides.
4. switching element according to claim 1, is characterized in that, described offset distance is between 2 microns to 20 microns.
5. switching element according to claim 1, is characterized in that, described switching element can sensing one light, and the wavelength of described light is between 0.01 nanometer to 500 nanometer.
6. a display floater, is characterized in that, comprising:
At least one switching element, has:
One substrate;
One grid, is arranged on described substrate;
One channel layer, is arranged on described substrate, and described channel layer is monoxide semiconductor;
At least one dielectric layer, described dielectric layer is arranged between described grid and described channel layer;
One first electrode, is arranged on described channel layer, and contacts with described channel layer; And
One second electrode, be arranged on described channel layer, and contact and there is a contact zone with described channel layer, between described the second electrode and described the first electrode, there is an interval, on the projecting direction of described switching element, described contact zone and described grid have an offset distance.
7. display floater according to claim 6, is characterized in that, described oxide semiconductor comprises a metal oxide, and described metal oxide comprise indium, zinc, gallium, tin and hafnium at least one of them.
8. display floater according to claim 6, is characterized in that, described grid one median plane extend through described channel layer, it is asymmetric that described channel layer is positioned at the structure of described median plane both sides.
9. display floater according to claim 6, is characterized in that, described offset distance is between 2 microns to 20 microns.
10. display floater according to claim 6, is characterized in that, described switching element can sensing one light, and the wavelength of described light is between 0.01 nanometer to 500 nanometer.
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| CN201310166640.5A CN104143573A (en) | 2013-05-08 | 2013-05-08 | Optical switch element and display panel |
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| CN201310166640.5A CN104143573A (en) | 2013-05-08 | 2013-05-08 | Optical switch element and display panel |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018120076A1 (en) * | 2016-12-30 | 2018-07-05 | 深圳市柔宇科技有限公司 | Thin-film transistor, display device, and manufacturing method for thin-film transistor |
| TWI804313B (en) * | 2021-09-26 | 2023-06-01 | 群創光電股份有限公司 | Electronic device and manufacturing method thereof |
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| US5200634A (en) * | 1988-09-30 | 1993-04-06 | Hitachi, Ltd. | Thin film phototransistor and photosensor array using the same |
| US5366909A (en) * | 1994-01-07 | 1994-11-22 | Goldstar Electron Co., Ltd. | Method for fabricating thin film transistor |
| US20070114430A1 (en) * | 2005-11-21 | 2007-05-24 | Fujifilm Corporation | Image detector and manufacturing method of the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5200634A (en) * | 1988-09-30 | 1993-04-06 | Hitachi, Ltd. | Thin film phototransistor and photosensor array using the same |
| US5366909A (en) * | 1994-01-07 | 1994-11-22 | Goldstar Electron Co., Ltd. | Method for fabricating thin film transistor |
| US20070114430A1 (en) * | 2005-11-21 | 2007-05-24 | Fujifilm Corporation | Image detector and manufacturing method of the same |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018120076A1 (en) * | 2016-12-30 | 2018-07-05 | 深圳市柔宇科技有限公司 | Thin-film transistor, display device, and manufacturing method for thin-film transistor |
| TWI804313B (en) * | 2021-09-26 | 2023-06-01 | 群創光電股份有限公司 | Electronic device and manufacturing method thereof |
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