CN104134709A - Printing technology for graphene electrode of polycrystalline silicon battery - Google Patents
Printing technology for graphene electrode of polycrystalline silicon battery Download PDFInfo
- Publication number
- CN104134709A CN104134709A CN201410399686.6A CN201410399686A CN104134709A CN 104134709 A CN104134709 A CN 104134709A CN 201410399686 A CN201410399686 A CN 201410399686A CN 104134709 A CN104134709 A CN 104134709A
- Authority
- CN
- China
- Prior art keywords
- printing
- speed
- graphene
- ranges
- slurry
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007639 printing Methods 0.000 title claims abstract description 63
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 45
- 238000005516 engineering process Methods 0.000 title abstract description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title abstract description 3
- 238000005245 sintering Methods 0.000 claims abstract description 26
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000004332 silver Substances 0.000 claims abstract description 19
- 229910052709 silver Inorganic materials 0.000 claims abstract description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 16
- 239000002002 slurry Substances 0.000 claims description 39
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 239000004411 aluminium Substances 0.000 claims description 14
- 239000007787 solid Substances 0.000 claims description 6
- 238000007650 screen-printing Methods 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 239000003795 chemical substances by application Substances 0.000 abstract description 7
- 238000004513 sizing Methods 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 6
- 238000001035 drying Methods 0.000 abstract 3
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 7
- 239000010408 film Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 150000001721 carbon Chemical group 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000003245 coal Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000005431 greenhouse gas Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Inks, Pencil-Leads, Or Crayons (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a printing technology for a graphene electrode of a polycrystalline silicon battery. The printing technology is characterized by comprising the following steps that firstly, a back electrode is printed, wherein silver paste is adopted as a printing sizing agent, the printing pressure ranges from 75 N to 80 N, the printing speed ranges from 250 mm/s to 300 mm/s, the ink returning speed ranges from 700 mm/s to 800 mm/s, and the drying temperature ranges from 100 DEG C to 150 DEG C; secondly, a back aluminum field is printed, wherein aluminum paste is adopted as a printing sizing agent, the printing pressure ranges from 75 N to 80 N, the printing speed ranges from 250 mm/s to 300 mm/s, the ink returning speed ranges from 700 mm/s to 800 mm/s, and the drying temperature ranges from 100 DEG C to 180 DEG C; thirdly, a front graphene electrode is printed, wherein the graphene sizing agent is adopted as a printing sizing agent, the printing pressure ranges from 50 N to 70 N, the printing speed ranges from 150 mm/s to 250 mm/s, and the ink returning speed ranges from 500 mm/s to 600 mm/s; fourthly, high-temperature sintering is carried out, wherein sintering is carried out in a sintering furnace, the vehicle speed ranges from 5,200 mm/min to 5,600 mm/min, the temperature in a drying area ranges from 300 DEG C to 400 DEG C, and the temperature in a sintering area ranges from 400 DEG C to 800 DEG C. According to the printing technology, the usage amount of a positive electrode silver paste material in the conventional process is reduced, and the manufacturing cost of a crystalline silicon battery piece is reduced.
Description
Technical field
The present invention relates to a kind of typography of Graphene electrodes of polycrystal silicon cell, in especially a kind of solar cell manufacture process, the typography of the Graphene front electrode of polysilicon chip, belongs to photovoltaic technology field.
Background technology
Fossil energy (coal, oil, natural gas) is the main body of Present Global energy consumption structure.Along with the mankind's continuous exploitation, the exhaustion of fossil energy is inevitable.In addition, fossil energy in use can produce a large amount of greenhouse gas CO
2, cause global warming, a series of serious environmental problems such as sea level rise.Devoting Major Efforts To Developing clean energy resource becomes human development trend from now on.From the viewpoint of fail safe, practicality and use resource, only having solar energy is unique energy source that can ensure mankind's energy demand.Therefore, national governments pay much attention to the development of photovoltaic industry, have put into effect a series of encouragement and support policy.Along with the solar cell manufacturing industry of various countries continues to drop into, the quality of solar cell and transformation efficiency have obtained significantly improving, and the production cost of product has also obtained effectively reducing simultaneously.In the crystal silicon battery of common process, its front electrode adopts silk screen print method preparation, and conductive silver paste used is as very large in impacts such as contact resistance, open circuit voltage Voc, fill factor, curve factor FF, transformation efficiency Eff on the performance of battery.But compared with external advanced Yin Jiang producer, the problem such as when the silver slurry that domestic Yin Jiang manufacturer produces exists sintering the low and percent defective of sintering range transformation efficiency narrow, solar cell is higher.Manufacture of solar cells producer of China adopts import silver slurry mostly, as some producers etc. of the he Li Shi of the Du Pont of the U.S., Germany and Japan, thereby increase production cost, and due to the ag paste electrode of battery front side printing, cover cell piece front light-receiving area, thereby affect the generating efficiency of cell piece, be unfavorable for the long-run development of photovoltaic industry.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, a kind of typography of Graphene electrodes of polycrystal silicon cell is provided, reduced the use of anode silver paste material in common process, greatly reduce the manufacturing cost of crystal-silicon battery slice.
According to technical scheme provided by the invention, a kind of typography of Graphene electrodes of polycrystal silicon cell, the silicon chip of effects on surface cvd nitride silicon thin film carries out silk screen printing, and feature is to comprise following processing step:
(1) printing of backplate: printing slurry adopts silver slurry, and squeegee pressure is 75～80N, and print speed printing speed is 250～300mm/ second, and returning black speed is 700～800mm/ second, and bake out temperature is 100～150 DEG C;
(2) printing of back aluminium back surface field: printing slurry adopts aluminium paste, and squeegee pressure is 75～80N, and print speed printing speed is 250～300mm/ second, returning black speed is 700～800mm/ second, bake out temperature is 100～180 DEG C;
(3) printing of positive Graphene electrodes: printing slurry adopts Graphene slurry, and squeegee pressure is 50～70N, and print speed printing speed is 150～250mm/ second, returning black speed is 500～600mm/ second;
(4) high temperature sintering: carry out sintering in sintering furnace, the speed of a motor vehicle is 5200～5600mm/ minute, and the temperature of baking zone is 300～400 DEG C, and the temperature of sintering zone is 400～800 DEG C.
In an embodiment, the solid content of described aluminium paste is 70～80%, fineness≤17.5 μ m, and viscosity is 200～400Pas.
In an embodiment, the solid content of described silver slurry is 55～65%, silver content is 50～60%.
In an embodiment, described Graphene slurry is scattered in solvent by individual layer sheet Graphene, and mass percentage concentration is 70～90%, and the average thickness of individual layer sheet Graphene is 0.33～1.7nm, and diameter is 100 μ m.
The present invention, compared with traditional handicraft, has the following advantages: (1) front electrode adopts the printing of Graphene slurry, has reduced the use of anode silver paste in traditional handicraft, and due to Graphene slurry, price is lower comparatively speaking, therefore reduced the manufacturing cost of solar cell; (2) because single-layer graphene film is very thin, only have a carbon atom thick, be about 0.34nm, its light transmission rate reaches more than 97%, almost be transparence, this material carrier mobility is very high simultaneously, has higher electric conductivity, block on the surface of having reduced battery, has improved the generating efficiency of battery; (3) open circuit voltage of the cell piece that typography of the present invention is made has improved 4mV than in the past, the short-circuit current ratio of cell piece had improved 0.13A in the past, and the conversion efficiency of cell piece has reached 17.5%, has improved 0.3% than in the past.
Embodiment
Below in conjunction with specific embodiment, the invention will be further described.
The silver slurry adopting in the embodiment of the present invention can adopt commercially available prod, is not specifically limited, as long as goal of the invention of the present invention is not produced to restriction; The silver slurry for the production of Shanghai glass nano-electron Materials Co., Ltd adopting in the embodiment of the present invention, silver content is 50～60%, and solid content is 50～55%, and viscosity is 70～130Pas.
The aluminium paste adopting in the embodiment of the present invention can adopt commercially available prod, is not specifically limited, as long as goal of the invention of the present invention is not produced to restriction; The aluminium paste for Nantong Tiansheng New Energy Technology Co., Ltd.'s production adopting in the embodiment of the present invention, solid content is 70～80%, fineness≤17.5um, viscosity is 200～400 Pas.
The Graphene slurry adopting in the embodiment of the present invention can adopt commercially available prod, is not specifically limited, as long as goal of the invention of the present invention is not produced to restriction; What in the embodiment of the present invention, adopt is the Graphene slurry that the hexa-atomic cellulosic material Science and Technology Co., Ltd. produces, Graphene slurry is scattered in solvent by individual layer sheet Graphene, mass percentage concentration is 70～90%, the average thickness of individual layer sheet Graphene is 0.33～1.7nm, diameter is 100 μ m, and in Graphene slurry, the carbon content of siccative is 95～97.5%.
Embodiment mono-: a kind of typography of Graphene electrodes of polycrystal silicon cell, the silicon chip of 400 surface deposition silicon nitride films is carried out to silk screen printing, comprise following processing step:
(1) printing of backplate: printing slurry adopts silver slurry, and squeegee pressure is 75N, and print speed printing speed is 250mm/ second, and returning black speed is 700mm/ second, and bake out temperature is 100 DEG C;
(2) printing of back aluminium back surface field: printing slurry adopts aluminium paste, and squeegee pressure is 75N, and print speed printing speed is 250mm/ second, returning black speed is 700mm/ second, bake out temperature is 100 DEG C;
(3) printing of positive Graphene electrodes: printing slurry adopts Graphene slurry, and squeegee pressure is 50N, and print speed printing speed is 150mm/ second, returning black speed is 500mm/ second; The Graphene number of plies obtaining after printing is 1～5 layer;
(4) high temperature sintering: carry out sintering in sintering furnace, the speed of a motor vehicle is 5200mm/ minute, and the temperature of baking zone is 300 DEG C, and the temperature of sintering zone is 400 DEG C.
The cell piece that embodiment mono-is produced carries out power test, its open circuit voltage 623mV, short circuit current 8.49 A, conversion efficiency 17.30%, than traditional handicraft improved efficiency 0.1%, simultaneously front electrode cost of sizing agent has reduced.
Embodiment bis-: a kind of typography of Graphene electrodes of polycrystal silicon cell, the silicon chip of 400 surface deposition silicon nitride films is carried out to silk screen printing, comprise following processing step:
(1) printing of backplate: printing slurry adopts silver slurry, and squeegee pressure is 78N, and print speed printing speed is 280mm/ second, and returning black speed is 750mm/ second, and bake out temperature is 130 DEG C;
(2) printing of back aluminium back surface field: printing slurry adopts aluminium paste, and squeegee pressure is 78N, and print speed printing speed is 280mm/ second, returning black speed is 750mm/ second, bake out temperature is 150 DEG C;
(3) printing of positive Graphene electrodes: printing slurry adopts Graphene slurry, and squeegee pressure is 60N, and print speed printing speed is 200mm/ second, returning black speed is 550mm/ second; The Graphene number of plies obtaining after printing is 1～5 layer;
(4) high temperature sintering: carry out sintering in sintering furnace, the speed of a motor vehicle is 5400mm/ minute, and the temperature of baking zone is 350 DEG C, and the temperature of sintering zone is 600 DEG C.
The cell piece that embodiment bis-is produced carries out power test, its open circuit voltage 625mV, short circuit current 8.55A, conversion efficiency 17.40%, than traditional handicraft improved efficiency 0.2%, simultaneously front electrode cost of sizing agent has reduced.
Embodiment tri-: a kind of typography of Graphene electrodes of polycrystal silicon cell, the silicon chip of 400 surface deposition silicon nitride films is carried out to silk screen printing, comprise following processing step:
(1) printing of backplate: printing slurry adopts silver slurry, and squeegee pressure is 80N, and print speed printing speed is 300mm/ second, and returning black speed is 800mm/ second, and bake out temperature is 150 DEG C;
(2) printing of back aluminium back surface field: printing slurry adopts aluminium paste, and squeegee pressure is 80N, and print speed printing speed is 300mm/ second, returning black speed is 800mm/ second, bake out temperature is 180 DEG C;
(3) printing of positive Graphene electrodes: printing slurry adopts Graphene slurry, and squeegee pressure is 70N, and print speed printing speed is 250mm/ second, returning black speed is 600mm/ second; The Graphene number of plies obtaining after printing is 1～5 layer;
(4) high temperature sintering: carry out sintering in sintering furnace, the speed of a motor vehicle is 5600mm/ minute, and the temperature of baking zone is 400 DEG C, and the temperature of sintering zone is 800 DEG C.
The cell piece that embodiment tri-is produced carries out power test, its open circuit voltage 627mV, short circuit current 8.62A, conversion efficiency 17.50%, than traditional handicraft improved efficiency 0.3%, simultaneously front electrode cost of sizing agent has reduced.
One aspect of the present invention has reduced the use of anode silver paste material in common process, greatly reduces the manufacturing cost of crystal-silicon battery slice; On the other hand, because single-layer graphene film is very thin, only have a carbon atom thick, be about 0.34nm, its light transmission rate reaches more than 97%, is almost transparence, this material carrier mobility is very high simultaneously, have higher electric conductivity, block on the surface of having reduced battery, has improved the generating efficiency of battery.
Claims (4)
1. a typography for the Graphene electrodes of polycrystal silicon cell, the silicon chip of effects on surface cvd nitride silicon thin film carries out silk screen printing, it is characterized in that, comprises following processing step:
(1) printing of backplate: printing slurry adopts silver slurry, and squeegee pressure is 75～80N, and print speed printing speed is 250～300mm/ second, and returning black speed is 700～800mm/ second, and bake out temperature is 100～150 DEG C;
(2) printing of back aluminium back surface field: printing slurry adopts aluminium paste, and squeegee pressure is 75～80N, and print speed printing speed is 250～300mm/ second, returning black speed is 700～800mm/ second, bake out temperature is 100～180 DEG C;
(3) printing of positive Graphene electrodes: printing slurry adopts Graphene slurry, and squeegee pressure is 50～70N, and print speed printing speed is 150～250mm/ second, returning black speed is 500～600mm/ second;
(4) high temperature sintering: carry out sintering in sintering furnace, the speed of a motor vehicle is 5200～5600mm/ minute, and the temperature of baking zone is 300～400 DEG C, and the temperature of sintering zone is 400～800 DEG C.
2. the typography of the Graphene electrodes of polycrystal silicon cell as claimed in claim 1, is characterized in that: the solid content of described aluminium paste is 70～80%, fineness≤17.5 μ m, and viscosity is 200～400Pas.
3. the typography of the Graphene electrodes of polycrystal silicon cell as claimed in claim 1, is characterized in that: the solid content of described silver slurry is 55～65%, silver content is 50～60%.
4. the typography of the Graphene electrodes of polycrystal silicon cell as claimed in claim 1, it is characterized in that: described Graphene slurry is scattered in solvent by individual layer sheet Graphene, mass percentage concentration is 70～90%, and the average thickness of individual layer sheet Graphene is 0.33～1.7nm, and diameter is 100 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410399686.6A CN104134709A (en) | 2014-08-14 | 2014-08-14 | Printing technology for graphene electrode of polycrystalline silicon battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410399686.6A CN104134709A (en) | 2014-08-14 | 2014-08-14 | Printing technology for graphene electrode of polycrystalline silicon battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104134709A true CN104134709A (en) | 2014-11-05 |
Family
ID=51807313
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410399686.6A Pending CN104134709A (en) | 2014-08-14 | 2014-08-14 | Printing technology for graphene electrode of polycrystalline silicon battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104134709A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108493280A (en) * | 2018-02-01 | 2018-09-04 | 苏州太阳井新能源有限公司 | A kind of solar cell and preparation method thereof of high surface conductance ability |
| CN109616531A (en) * | 2018-12-03 | 2019-04-12 | 江苏中宇光伏科技有限公司 | The printing technology of silicon wafer in a kind of production of solar battery sheet |
| CN113284956A (en) * | 2021-04-08 | 2021-08-20 | 李铁 | Improved crystalline silicon solar cell printing process |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102652118A (en) * | 2009-12-18 | 2012-08-29 | E·I·内穆尔杜邦公司 | Glass compositions used in conductors for photovoltaic cells |
| CN102689534A (en) * | 2012-06-11 | 2012-09-26 | 浚鑫科技股份有限公司 | Silk-screen printing method for positive electrode of solar battery |
| CN102779864A (en) * | 2012-07-19 | 2012-11-14 | 中山大学 | Cadmium telluride thin-film battery and manufacturing method thereof |
| CN102820377A (en) * | 2012-08-27 | 2012-12-12 | 恒基光伏电力科技股份有限公司 | Solar cell production process |
| CN103199134A (en) * | 2013-03-11 | 2013-07-10 | 辽宁德菲格瑞特新型节能材料有限公司 | Graphene electrode compound solar power generation glass |
| CN203242640U (en) * | 2013-02-25 | 2013-10-16 | 中国东方电气集团有限公司 | A crystalline silicon solar battery containing a transparent electrode |
| CN103489499A (en) * | 2013-09-04 | 2014-01-01 | 苏州金瑞晨科技有限公司 | Nanometer silicon silver slurry, method for preparing same and application of same |
-
2014
- 2014-08-14 CN CN201410399686.6A patent/CN104134709A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102652118A (en) * | 2009-12-18 | 2012-08-29 | E·I·内穆尔杜邦公司 | Glass compositions used in conductors for photovoltaic cells |
| CN102689534A (en) * | 2012-06-11 | 2012-09-26 | 浚鑫科技股份有限公司 | Silk-screen printing method for positive electrode of solar battery |
| CN102779864A (en) * | 2012-07-19 | 2012-11-14 | 中山大学 | Cadmium telluride thin-film battery and manufacturing method thereof |
| CN102820377A (en) * | 2012-08-27 | 2012-12-12 | 恒基光伏电力科技股份有限公司 | Solar cell production process |
| CN203242640U (en) * | 2013-02-25 | 2013-10-16 | 中国东方电气集团有限公司 | A crystalline silicon solar battery containing a transparent electrode |
| CN103199134A (en) * | 2013-03-11 | 2013-07-10 | 辽宁德菲格瑞特新型节能材料有限公司 | Graphene electrode compound solar power generation glass |
| CN103489499A (en) * | 2013-09-04 | 2014-01-01 | 苏州金瑞晨科技有限公司 | Nanometer silicon silver slurry, method for preparing same and application of same |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108493280A (en) * | 2018-02-01 | 2018-09-04 | 苏州太阳井新能源有限公司 | A kind of solar cell and preparation method thereof of high surface conductance ability |
| CN109616531A (en) * | 2018-12-03 | 2019-04-12 | 江苏中宇光伏科技有限公司 | The printing technology of silicon wafer in a kind of production of solar battery sheet |
| CN113284956A (en) * | 2021-04-08 | 2021-08-20 | 李铁 | Improved crystalline silicon solar cell printing process |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105322043B (en) | It is a kind of can two-sided entering light crystal silicon solar battery and preparation method thereof | |
| CN102779864B (en) | Cadmium telluride thin-film battery and manufacturing method thereof | |
| CN110040968A (en) | A kind of glass powder and the silver-colored aluminium paste in N-type double-sided solar battery front including the glass powder | |
| CN102074590B (en) | Back-contact electrode in cadmium telluride diaphragm solar battery structure and preparation method | |
| CN106816493A (en) | A kind of heterojunction solar battery edge insulation method | |
| CN102324266B (en) | Glass-powder-free crystalline silicon solar battery aluminum paste and preparation method thereof | |
| CN110459343B (en) | Low-temperature sintering type back silver paste for all-aluminum back surface field crystalline silicon solar cell | |
| CN103896578B (en) | A kind of preparation method of high density low resistivity zinc oxide ceramic target | |
| CN102956283A (en) | Novel lead-free sliver slurry for high-efficiency crystalline silicon solar battery as well as preparation and application thereof | |
| CN102694066B (en) | Method for improving photoelectric conversion efficiency of solar cell panel | |
| CN104134709A (en) | Printing technology for graphene electrode of polycrystalline silicon battery | |
| CN102623563B (en) | Manufacturing method for double-face illuminated crystalline silicon solar cell | |
| CN109119181B (en) | Front silver paste for crystalline silicon solar cell and preparation method and application thereof | |
| CN103060861A (en) | Method for preparing copper-zinc-tin-sulfur film through co-electrodeposition | |
| CN203503678U (en) | HIT solar cell | |
| CN103700725A (en) | Preparation method of nano-particle-based copper indium sulphur selenium film for solar battery | |
| CN101635319B (en) | Method for manufacturing back aluminium diffused N type solar cell | |
| CN106816481A (en) | A kind of preparation method of heterojunction solar battery | |
| CN107829071B (en) | The preparation method of copper antimony sulphur thin-film material | |
| Sun et al. | Improvement of wettability of Te-modified lead-free glass frit and its effect to front side silver paste in crystalline silicon solar cells | |
| CN104377037B (en) | A kind of preparation method of the graphene thick-film electrode with high adhesion force | |
| CN108551312A (en) | A kind of Sb with stretchable structure2Se3Thin-film solar cells and preparation method | |
| CN105118873B (en) | Crystal silicon solar energy battery front electrode silver slurry | |
| CN109786562A (en) | A kind of preparation for the carbon composite electrode improving perovskite solar cell photoelectric performance | |
| CN102931354B (en) | Composite transparent electrode, polymer solar battery and their preparation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| AD01 | Patent right deemed abandoned |
Effective date of abandoning: 20170201 |
|
| C20 | Patent right or utility model deemed to be abandoned or is abandoned |