CN104134708A - Method for ohmic contact between copper indium gallium diselenide and molybdenum and solar cell preparation method - Google Patents
Method for ohmic contact between copper indium gallium diselenide and molybdenum and solar cell preparation method Download PDFInfo
- Publication number
- CN104134708A CN104134708A CN201410396445.6A CN201410396445A CN104134708A CN 104134708 A CN104134708 A CN 104134708A CN 201410396445 A CN201410396445 A CN 201410396445A CN 104134708 A CN104134708 A CN 104134708A
- Authority
- CN
- China
- Prior art keywords
- film
- voltage
- cigs
- scanning
- electrode wires
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 40
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 229910052750 molybdenum Inorganic materials 0.000 title claims abstract description 22
- 239000011733 molybdenum Substances 0.000 title claims abstract description 22
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 title abstract description 4
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 title abstract 3
- 239000010409 thin film Substances 0.000 claims abstract description 24
- 239000010408 film Substances 0.000 claims description 146
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 26
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims description 14
- 239000011787 zinc oxide Substances 0.000 claims description 13
- 230000009471 action Effects 0.000 claims description 9
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 6
- 230000001105 regulatory effect Effects 0.000 claims description 5
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000005036 potential barrier Methods 0.000 abstract 1
- 230000008859 change Effects 0.000 description 5
- 229960001296 zinc oxide Drugs 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 238000005096 rolling process Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006260 foam Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000943 NiAl Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a method for ohmic contact between copper indium gallium diselenide and molybdenum and a solar cell preparation method. After a CIGS thin film is formed on a Mo thin film, power voltage is applied between the CIGS thin film and the Mo thin film, a scanning assembly carries out two-dimensional scanning on the surface of the CIGS thin film, the contact-potential barrier between the Mo thin film and the CIGS thin film is broken through, internal resistance of the thin-film solar cell is reduced, and conditions are created for improving efficiency of the solar cell. According to the method for ohmic contact between copper indium gallium diselenide and molybdenum and the solar cell preparation method, through the voltage application mode, additional processing on the surface of the Mo thin film can be reduced, the number of procedures is reduced, uncontrollability caused by additional technologies is avoided, the implementation methods are quite simple, and input of subsequent industrial development is saved.
Description
Technical field
The present invention relates to thin-film solar cells preparation, relate in particular to a kind of method of ohmic contact and preparation method of solar cell who changes Copper Indium Gallium Selenide and molybdenum.
Background technology
Thin-film solar cells, becomes the main development direction of following battery with the characteristic of its low-loss, high yield.Copper indium gallium selenium solar cell is one of developing direction main in thin-film solar cells.Its structure comprises from bottom to up successively: glass or flexible substrate, molybdenum Mo film, Copper Indium Gallium Selenide CIGS film, cadmium sulfide CdS film, zinc oxide ZnO film, Al-Doped ZnO ZnO:Al film and surface electrode, wherein, cadmium sulphide membrane is to the contact resistance between zinc-oxide film and zinc-oxide film and Al-Doped ZnO film, because material self coupling better, so the impact on battery performance is smaller, can meet the needs of practical application.Yet the contact resistance value between molybdenum Mo and Copper Indium Gallium Selenide CIGS is larger, affect the performance of solar cell.
The work function of metal molybdenum Mo is 4.53eV (100)～4.95eV (110), the work function of Copper Indium Gallium Selenide CIGS semiconductive thin film is 4.7eV, between molybdenum film and CIGS thin-film, only, when molybdenum film is grown along the crystal lattice orientation of 110, could form good ohmic contact with CIGS thin-film.At present, overcome the problem of this non-ohmic contact, main passing through, before and after CIGS film selenizing process, prepared the selenizing molybdenum MoSe2 film that one deck is very thin wittingly on the surface of Mo film, play the effect of energy level and lattice constant transition.Yet, even if prepare one deck MoSe2 film on Mo film, also not necessarily have good ohmic contact, need to meet some requirements, and this preparation method's complex process is very difficult to control.Preparation technology can increase the contact resistance between Mo film and CIGS film improperly, and then increases the series resistance of CIGS battery, affects the performance of solar cell.And extra technique is also likely destroyed the mechanical connection performance between CIGS film and Mo film, as produced the phenomenons such as CIGS film comes off.
Summary of the invention
For above problems of the prior art, the present invention proposes a kind of method of ohmic contact of shock by electricity change Copper Indium Gallium Selenide and molybdenum, to overcome the uncontrollability that adopts additional technique to bring, implementation method is very simple.
One object of the present invention is to provide a kind of method that changes the ohmic contact of Copper Indium Gallium Selenide and molybdenum.
The method of the ohmic contact of change Copper Indium Gallium Selenide of the present invention and molybdenum, comprises the following steps:
1) on substrate, by sputtering method, prepare Mo film;
2) by sputtering and selenization technique method or three step coevaporation methods, on Mo film, prepare CIGS film;
3) provide two electrode wires, one end of the first electrode wires is connected in a polarity of power supply, and the other end is connected to Mo film, and one end of the second electrode wires is connected in the polarity contrary with connecting the first electrode wires of power supply, the other end is installed scan components, and scan components is placed on CIGS film;
4) power-on, regulating power source voltage, electric current I-the voltage V curves of test CIGS film and Mo film, if meet straight line, using the voltage that now applies as scanning voltage, if I-V curve does not meet straight line, increase the value of supply voltage, test I-V curve again, until I-V curve meets straight line, usings the voltage that now applies as scanning voltage;
5) according to step 4) scanning voltage that obtains sets supply voltage, and scan components is in the enterprising line scanning in the surface of CIGS film, until scan components has all scanned the surface of CIGS film successively, realizes the ohmic contact between Mo film and CIGS film.
Wherein, in step 3) in, scan components comprises electrode connecting portion part and at its surperficial film contact component, electrode connecting portion part is connected to one end of the second electrode wires, and film contact component contacts with CIGS film.Electrode connecting portion part adopts the metal material of good conductivity, as copper, silver and golden etc.; Film contact component adopts evenly flexible electric conducting material, as: conductive foam, conductive fabric liner and conductive foam etc.Scan components can adopt scanning slide block, or scanning roller.Scanning slide block comprises the block electrode connecting portion part being connected with the second electrode wires and at the film contact component of its lower surface.Scanning roller comprises electrode connecting portion part, film link and brush plate, electrode connecting portion part be shaped as cylinder, film contact component is wrapped in its surface and has good conductivity, can adopt the smaller carbon of good conductivity and hardness, indium, the materials such as copper, the action bars of installing insulating on electrode connecting portion part, by control operation bar, making to scan roller rolls and scans on the surface of CIGS film, one end of the second electrode wires is fixed on action bars, one end of brush plate is connected with the one end that is fixed on the second electrode wires on action bars, the surface of the Surface Contact film contact component of the other end, realize the conduction of film contact component.The width of scan components is no more than 5mm, because if too wide, in contact-making surface, may just have sweep less than place, if too narrow (as being less than 2mm), pressure is too large, can destroy CIGS film.Scanning roller adopts stepping motor or the mode manually controlled is controlled joystick and driven scanning roller, by contacting of scrolling realization and difference.Because scanning slide block is directly in CIGS thin-film friction, can destroy this layer film, even CIGS film can be ground off, therefore adopt the scanning of rolling, will drop to minimum to the friction of CIGS film.Adopt rolling scan mode, must solve the electric Contacts that scans roller and electrode wires in rolling process, in the present invention, adopt resilient brush plate effectively to solve this problem.The essence of brush plate is the contact chip of conduction, one end receiving electrode line, and the Surface Contact of brush plate, to scanning roller, is realized the conduction of electrode wires and scanning roller.Like this, both guaranteed that the surface of CIGS film can switch on, the possibility that makes again CIGS film be destroyed by rubbing drops to minimum.Electrode wires is plain conductor; Brush plate adopts the metal material of good conductivity.
In step 4) in, because the open circuit voltage of thin-film solar cells is 700mv left and right, 10 times of open circuit voltage of battery of take are starting point, the initial value of supply voltage is set, through repetition test, grope, initial value is set to 10V, is the initial value of suitable supply voltage.Supply voltage be take 10V as initial value, is applied on CIGS film and Mo film, and test I-V curve, if do not meet straight line, illustrates between CIGS film and Mo film and there is no good ohmic contact; Take 1V as interval voltage, increase supply voltage, then measure I-V curve, until I-V curve meets straight line, illustrate between CIGS film and Mo film and realized good ohmic contact, using the voltage that now applies as scanning voltage.The supply voltage applying is between 10～50V.
In step 5) in, with scanning slide block, be of a size of sweep spacing, make to scan the slide block surface of scanned CIGS film successively, complete the surperficial two-dimensional scan at CIGS film, contact berrier between Mo film and CIGS film is punctured, thereby realize the ohmic contact between the two.
Another object of the present invention is to provide a kind of preparation method of solar cell of the ohmic contact that changes Copper Indium Gallium Selenide and molybdenum.
The preparation method of the solar cell of the ohmic contact of change Copper Indium Gallium Selenide of the present invention and molybdenum, comprises the following steps:
1) in glass or flexible substrate, by sputtering method, prepare Mo film, thickness 500nm～800nm;
2) by sputtering and selenization technique method or three step coevaporation methods, on Mo film, prepare CIGS film, thickness 1.2 μ m～2.5 μ m;
3) provide two electrode wires, one end of the first electrode wires is connected in a polarity of power supply, and the other end is connected to Mo film, and one end of the second electrode wires is connected in the polarity contrary with connecting the first electrode wires of power supply, the other end is installed scanning slide block, and scanning slide block is placed on CIGS film;
4) power-on, regulating power source voltage, electric current I-the voltage V curves of test CIGS film and Mo film, if meet straight line, using the voltage that now applies as scanning voltage, if I-V curve does not meet straight line, increase the value of supply voltage, test I-V curve again, until I-V curve meets straight line, usings the voltage that now applies as scanning voltage;
5) according to step 4) scanning voltage that obtains sets supply voltage, and scanning slide block is in the enterprising line scanning in the surface of CIGS film, until the ohmic contact between Mo film and CIGS film has been realized on the scanning slide block surface of scanned CIGS film successively;
6) on CIGS film, form successively the cadmium sulfide CdS film of thickness 50nm～70nm, the zinc oxide ZnO film of thickness 50nm～60nm, zinc oxide aluminum ZnOAl film and the surface electrode of thickness 200nm～800nm, complete the preparation of thin-film solar cells.
Advantage of the present invention:
After the present invention adopts and form CIGS film on Mo film, between the two, apply supply voltage, scanning slide block carries out two-dimensional scan on the surface of CIGS film, contact berrier between Mo film and CIGS film is punctured, reduce the internal resistance of thin-film solar cells, for improving the efficiency of thin-film solar cells, created condition.The present invention, by executing alive mode, can reduce the extra process at Mo film surface, has reduced flow process, thus the uncontrollability of having avoided additional technique to bring, and implementation method is very simple, for follow-up industrialized development, saves and drops into.
Accompanying drawing explanation
Fig. 1 is that the present invention applies the structural representation of supply voltage between CIGS thin-film and molybdenum film;
Fig. 2 is the schematic diagram that scan components of the present invention adopts the part of scanning slide block to amplify;
Fig. 3 is the schematic diagram that scan components of the present invention adopts the part of scanning roller to amplify;
Fig. 4 is the I-V curve chart of the present invention between CIGS thin-film and molybdenum film, wherein, (a) for applying the I-V curve chart before supply voltage, is (b) the I-V curve chart applying after supply voltage;
Fig. 5 is the profile of solar cell of the ohmic contact of change Copper Indium Gallium Selenide of the present invention and molybdenum.
Embodiment
Below in conjunction with accompanying drawing, by embodiment, the present invention will be further described.
As shown in Figure 1, the method for the change Copper Indium Gallium Selenide of the present embodiment and the ohmic contact of molybdenum, comprises the following steps:
1) in glass substrate 0, by sputtering method, prepare 500nmMo film 1;
2) by sputtering and selenization technique method, on Mo film 1, prepare 1.2 μ m CIGS films 2;
3) provide two electrode wires, one end of the first electrode wires A is connected on the positive pole of power supply, the other end is connected to Mo film 1, one end of the second electrode wires B is connected on the negative pole of power supply Us, the other end connects scan components S, scan components S is placed on CIGS film 2, and in the present embodiment, scan components S adopts scanning slide block;
4) power-on, regulating power source voltage U is 10V, the I-V curve of test CIGS film and Mo film, do not meet straight line, interval with 1V is increased to supply voltage, until while being increased to 15V, I-V curve meets straight line, illustrate between CIGS film and Mo film and realized good ohmic contact, using 15V as scanning voltage;
5) supply voltage is set as to 15V, scanning slide block, in the enterprising line scanning in the surface of CIGS film, until scan the slide block surface of scanned CIGS film successively, has been realized the ohmic contact between Mo film and CIGS film.
Scan components S adopts scanning slide block, as shown in Figure 2, comprises the block electrode connecting portion part S1 being connected with the second electrode wires B and at the film contact component S2 of its lower surface; Width is 3mm.
As shown in Figure 3, scanning roller can also adopt scanning roller, comprises electrode connecting portion part S1, film link S2 and brush plate S4; Electrode connecting portion part S1 is shaped as cylinder, film contact component S2 is wrapped in its surface, the action bars S3 of installing insulating on electrode connecting portion part S1, by control operation bar S3, making to scan roller rolls and scans on the surface of CIGS film 2, one end of the second electrode wires B is fixed on action bars S3, one end of brush plate S4 is connected with the one end that is fixed on the second electrode wires on action bars, and the conduction of film contact component is realized on the surface of other end contact membrane contact component S2; The width of scanning roller is no more than 5mm.
As shown in Figure 4, Fig. 4 (a) is for CIGS film and Mo film apply the I-V curve before voltage to I-V curve between CIGS film and Mo film, and between the two, the resistance of resistance is very large.Apply voltage, after the contact berrier between Mo film and CIGS film is punctured, I-V curve meets straight line, as shown in Fig. 4 (b), represents to have formed between the two ohmic contact.
After the ohmic contact realizing between Mo film and CIGS film, on CIGS film, form successively the cadmium sulfide GeS film 3 of 50nm, the zinc oxide ZnO film 4 of 50nm, the zinc oxide aluminum ZnOAl film 5 of 200nm, and the surface electrode 6 of nickel aluminium NiAl, complete the preparation of thin-film solar cells, as shown in Figure 5.
Finally it should be noted that, the object of publicizing and implementing mode is to help further to understand the present invention, but it will be appreciated by those skilled in the art that: without departing from the spirit and scope of the invention and the appended claims, various substitutions and modifications are all possible.Therefore, the present invention should not be limited to the disclosed content of embodiment, and the scope that the scope of protection of present invention defines with claims is as the criterion.
Claims (9)
1. a method that changes the ohmic contact of Copper Indium Gallium Selenide and molybdenum, is characterized in that, said method comprising the steps of:
1) on substrate, prepare Mo film;
2) on Mo film, prepare CIGS film;
3) provide two electrode wires, one end of the first electrode wires is connected in a polarity of power supply, and the other end is connected to Mo film, and one end of the second electrode wires is connected in the polarity contrary with connecting the first electrode wires of power supply, the other end is installed scan components, and scan components is placed on CIGS film;
4) power-on, regulating power source voltage, electric current I-the voltage V curves of test CIGS film and Mo film, if meet straight line, using the voltage that now applies as scanning voltage, if I-V curve does not meet straight line, increase the value of supply voltage, test I-V curve again, until I-V curve meets straight line, usings the voltage that now applies as scanning voltage;
5) according to step 4) scanning voltage that obtains sets supply voltage, and scan components is in the enterprising line scanning in the surface of CIGS film, until scan components has all scanned the surface of CIGS film successively, realizes the ohmic contact between Mo film and CIGS film.
2. the method for claim 1, it is characterized in that, in step 3) in, described scan components comprises electrode connecting portion part and at its surperficial film contact component, electrode connecting portion part is connected to one end of the second electrode wires, and film contact component contacts with CIGS film.
3. method as claimed in claim 2, is characterized in that, described scan components adopts scanning slide block, and scanning slide block comprises the block electrode connecting portion part being connected with the second electrode wires and at the film contact component of its lower surface.
4. method as claimed in claim 2, is characterized in that, described scan components adopts scanning roller, and scanning roller comprises electrode connecting portion part, film link and brush plate; Electrode connecting portion part be shaped as cylinder, film contact component is wrapped in its surface, the action bars of installing insulating on electrode connecting portion part, by control operation bar, making to scan roller rolls and scans on the surface of CIGS film, one end of the second electrode wires is fixed on action bars, one end of brush plate is connected with the one end that is fixed on the second electrode wires on action bars, and the conduction of film contact component is realized on the surface of the Surface Contact film contact component of the other end.
5. method as claimed in claim 2, is characterized in that, the width of described scan components is no more than 5mm.
6. method as claimed in claim 2, is characterized in that, described electrode connecting portion part adopts the metal material of good conductivity; Described film contact component adopts evenly flexible electric conducting material.
7. the method for claim 1, is characterized in that, in step 4) in, the supply voltage applying is between 10～50V.
8. method as claimed in claim 7, is characterized in that, take 1V as interval voltage, increases supply voltage.
9. the preparation method of solar cell who changes the ohmic contact of Copper Indium Gallium Selenide and molybdenum, is characterized in that, described preparation method comprises the following steps:
1) in glass or flexible substrate, by sputtering method, prepare Mo film;
2) by sputtering and selenization technique method or three step coevaporation methods, on Mo film, prepare CIGS film;
3) provide two electrode wires, one end of the first electrode wires is connected in a polarity of power supply, and the other end is connected to Mo film, and one end of the second electrode wires is connected in the polarity contrary with connecting the first electrode wires of power supply, the other end is installed scan components, and scan components is placed on CIGS film;
4) power-on, regulating power source voltage, electric current I-the voltage V curves of test CIGS film and Mo film, if meet straight line, using the voltage that now applies as scanning voltage, if I-V curve does not meet straight line, increase the value of supply voltage, test I-V curve again, until I-V curve meets straight line, usings the voltage that now applies as scanning voltage;
5) according to step 4) scanning voltage that obtains sets supply voltage, and scan components is in the enterprising line scanning in the surface of CIGS film, until the ohmic contact between Mo film and CIGS film has been realized on the scan components surface of scanned CIGS film successively;
6) on CIGS film, form successively cadmium sulfide CdS film, zinc oxide ZnO film, zinc oxide aluminum ZnOAl film and surface electrode, complete the preparation of thin-film solar cells.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410396445.6A CN104134708B (en) | 2014-08-13 | 2014-08-13 | The method of the ohmic contact of Copper Indium Gallium Selenide and molybdenum and the preparation method of solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410396445.6A CN104134708B (en) | 2014-08-13 | 2014-08-13 | The method of the ohmic contact of Copper Indium Gallium Selenide and molybdenum and the preparation method of solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104134708A true CN104134708A (en) | 2014-11-05 |
| CN104134708B CN104134708B (en) | 2016-02-17 |
Family
ID=51807312
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410396445.6A Expired - Fee Related CN104134708B (en) | 2014-08-13 | 2014-08-13 | The method of the ohmic contact of Copper Indium Gallium Selenide and molybdenum and the preparation method of solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104134708B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105088161A (en) * | 2015-08-31 | 2015-11-25 | 北京大学 | Microwave plasma-based treatment method and system for surface modification of copper indium gallium selenide (CIGS) |
| CN107658347A (en) * | 2017-09-28 | 2018-02-02 | 湖北工业大学 | A kind of preparation method of diffusing reflection enhancing back contacts molybdenum electrode |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201023373A (en) * | 2008-12-09 | 2010-06-16 | Jenn Feng Ind Co Ltd | CIGS solar cell structure and manufacturing method thereof |
| US20100236629A1 (en) * | 2009-03-19 | 2010-09-23 | Chuan-Lung Chuang | CIGS Solar Cell Structure And Method For Fabricating The Same |
| WO2011107035A1 (en) * | 2010-03-05 | 2011-09-09 | 中国科学院上海硅酸盐研究所 | Method for preparing copper-indium-gallium-selenium film for solar cell photo-absorption layer by magnetron sputtering process |
| CN103296139A (en) * | 2013-05-20 | 2013-09-11 | 天津师范大学 | Preparation method of CIGS (copper indium gallium selenide) thin-film solar cell absorbing layer |
-
2014
- 2014-08-13 CN CN201410396445.6A patent/CN104134708B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201023373A (en) * | 2008-12-09 | 2010-06-16 | Jenn Feng Ind Co Ltd | CIGS solar cell structure and manufacturing method thereof |
| US20100236629A1 (en) * | 2009-03-19 | 2010-09-23 | Chuan-Lung Chuang | CIGS Solar Cell Structure And Method For Fabricating The Same |
| US20110086465A1 (en) * | 2009-03-19 | 2011-04-14 | Chuan-Lung Chuang | Cigs solar cell structure and method for fabricating the same |
| WO2011107035A1 (en) * | 2010-03-05 | 2011-09-09 | 中国科学院上海硅酸盐研究所 | Method for preparing copper-indium-gallium-selenium film for solar cell photo-absorption layer by magnetron sputtering process |
| CN103296139A (en) * | 2013-05-20 | 2013-09-11 | 天津师范大学 | Preparation method of CIGS (copper indium gallium selenide) thin-film solar cell absorbing layer |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105088161A (en) * | 2015-08-31 | 2015-11-25 | 北京大学 | Microwave plasma-based treatment method and system for surface modification of copper indium gallium selenide (CIGS) |
| CN105088161B (en) * | 2015-08-31 | 2017-06-27 | 北京大学 | Based on processing method and system that microwave plasma is modified to CIGS surface |
| CN107658347A (en) * | 2017-09-28 | 2018-02-02 | 湖北工业大学 | A kind of preparation method of diffusing reflection enhancing back contacts molybdenum electrode |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104134708B (en) | 2016-02-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2011139754A3 (en) | Electronic gate enhancement of schottky junction solar cells | |
| EP2573813A1 (en) | Method of manufacturing a thin film solar cell with unit cells connected in series with a reduced number of patterning steps and corresponding device | |
| KR101091258B1 (en) | Solar cell and method of fabircating the same | |
| CN201780976U (en) | CdTe (cadmium telluride) solar cell | |
| US20150380579A1 (en) | Light receiving device including transparent electrode and method of manufacturing light receiving device | |
| CN101952980B (en) | Solar cell module | |
| JP2015119634A (en) | Photovoltaic device and method for manufacturing the same | |
| CN108987528A (en) | A kind of heterojunction solar battery edge insulation method | |
| CN104134708B (en) | The method of the ohmic contact of Copper Indium Gallium Selenide and molybdenum and the preparation method of solar cell | |
| US20150263195A1 (en) | Solar cell and method of fabricating same | |
| CN205960005U (en) | Heterojunction solar cell | |
| CN104272470A (en) | Solar cell and method of fabricating the same | |
| CN101908566A (en) | Solar cell and manufacture method thereof | |
| US20150228820A1 (en) | Front contact for a solar cell, and method of making same | |
| KR101610379B1 (en) | Solar cell and method of fabircating the same | |
| KR20120012327A (en) | Solar cell apparatus and method of fabricating the same | |
| EP2323147A3 (en) | Dye-sensitized solar cell electrode and dye-sensitized solar cell | |
| CN203178321U (en) | EL tester and wiring apparatus thereof | |
| Yoon et al. | Enhanced output performance of sandwich-type ZnO piezoelectric nanogenerator with adhesive carbon tape | |
| CN203445136U (en) | Flexible thin-film solar cell | |
| KR20150071553A (en) | Flexible solar cell having layer for diffusion barrier comprising transparent conducting oxide | |
| CN102593208A (en) | Solar cell component structure | |
| CN105336807A (en) | Heterojunction solar cell and preparation method thereof and solar cell module | |
| CN103700716B (en) | A kind of crystal silicon solar batteries Novel front surface electrode | |
| CN104425629A (en) | Plane type Schottky diode and production method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160217 Termination date: 20190813 |