CN102593208A - Solar cell component structure - Google Patents
Solar cell component structure Download PDFInfo
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- CN102593208A CN102593208A CN2011100040787A CN201110004078A CN102593208A CN 102593208 A CN102593208 A CN 102593208A CN 2011100040787 A CN2011100040787 A CN 2011100040787A CN 201110004078 A CN201110004078 A CN 201110004078A CN 102593208 A CN102593208 A CN 102593208A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention discloses a solar cell component structure comprising a substrate, a metal layer, a p-type semiconductor layer, an n-type semiconductor layer, a transparent conductive layer and a high resistance film layer, wherein the metal layer is formed on the surface of the substrate; the p-type semiconductor layer is formed on the metal layer and comprises copper indium gallium selenium sulfur (CIGSS), copper indium gallium selenium (CIGS), copper indium sulfur (CIS), copper indium selenium (CIS) or a compound material containing two or two more of copper, selenium or sulfur; the n-type semiconductor layer has the photocatalyst characteristics (such as improvement of carrier mobility by using irradiation), is formed on the surface of the p-type semiconductor layer and forms a p-n joint surface together with the p-type semiconductor layer; the transparent conductive layer is formed on the n-type semiconductor layer; and the high resistance film layer is formed between the metal layer and the transparent conductive layer.
Description
Technical field
The present invention relates to a kind of solar battery structure, relate in particular to a kind of CIGS quaternary film solar battery structure of plain (being called for short CIGS) that for example contains.
Background technology
In the thin-film solar cells, the photoelectric cell of copper indium gallium selenium solar cell (Copper Indium Gallium Diselenide Solar Cells) type is in respect of two kinds: a kind of CIS element (being called for short CIS) and a kind of CIGS quaternary plain (being called for short CIGS) that contains of containing.Because its high photoelectric efficiency and low material cost are good by many people.It is about 19% that the CIGS photocell of accomplishing in the laboratory, photoelectric efficiency reach as high as, and with regard to module, Gao Yike reaches about 13%.
Fig. 1 discloses a traditional CIGS solar battery structure 10, and it comprises a substrate 11, a metal level 12, a cigs layer 13, a resilient coating 14 and a transparency conducting layer (TCO) 15 for stepped construction.Substrate 11 is generally glass substrate, and metal level 12 can be made up of molybdenum (Mo) metal level, with the chemical property that cooperates CIGS and the relatively-high temperature can bear deposition cigs layer 13 time.Cigs layer 13 is p type semiconductor layer.This resilient coating 14 can be cadmium sulfide (CdS), and it is a n type semiconductor layer and form the p-n composition surfaces with cigs layer 13.Transparency conducting layer 15 can be Al-Doped ZnO (AZO) or other transparent conductive materials.Transparency conducting layer 15 also has the window of being called layer (window layer), its can let the top light through and the cigs layer 13 under it of arriving.
If resilient coating comprises cadmium sulfide (CdS), because of cadmium contain toxic, if can cause sizable harm to health through edible.Therefore in the solar cell device if there is cadmium, if following discarded back is probably caused environmental pollution, and is deepened the healthy doubt that is threatened without dealing carefully with.
In addition, CdS general using chemical bath deposition method (Chemical Bath Deposition; CBD) make, so will produce a large amount of waste liquids in the manufacture process, also will impact environment.
Therefore, present advanced technologies develops towards the substitute direction of seeking CdS invariably, to solve the issuable problem of CdS of using.
Summary of the invention
For addressing the above problem, the present invention provides a kind of solar battery element structure.
Solar battery element structure of the present invention is to be used in the n type semiconductor layer that forms tool photocatalyst characteristic in the battery structure, to substitute the use of cadmium element, not only reduces when making producing a large amount of waste liquids, and avoids cadmium pollution environment.
Solar battery element structure according to an embodiment of the invention, it comprises a substrate, a metal level, a p type semiconductor layer, a n type semiconductor layer, a transparency conducting layer and a high resistance film.This metal level is formed at the surface of this substrate.This p type semiconductor layer is formed on this metal level, and comprises Cu-In-Ga-Se-S (CIGSS), CIGS (CIGS), copper indium sulphur (CIS), CIS (CIS) or comprise the above compound-material of copper, selenium or sulphur the two or the two.This n type semiconductor layer tool photocatalyst characteristic (for example capable of using irradiation improve carrier transport factor), and be formed at the surface of this p type semiconductor layer, and form the p-n composition surface with this p type semiconductor layer.This transparency conducting layer is formed on this n type semiconductor layer.Folded the establishing of this high resistance film is contacted with between this metal level and this p type semiconductor layer, or between this n type semiconductor layer and this transparency conducting layer.
Among one embodiment, this n type semiconductor layer comprises titanium oxide (TiO
2) or tungsten oxide (WO
3), and its thickness is between 1～1000nm.With titanium oxide, its activity behind irradiation is very strong, and possesses the character of photocatalyst, so alternative traditional CdS, has the practical value of environmental protection as the n type semiconductor layer.
Therefore, for example with titanium oxide (TiO
2) or tungsten oxide (WO
3) as the n type semiconductor layer, by the character of its photocatalyst, alternative traditional CdS, and the pollution that can effectively avoid CdS to cause.
Description of drawings
Fig. 1 is a traditional solar battery element structure sketch map;
Fig. 2 is the solar battery element structure sketch map of first embodiment of the invention; And
Fig. 3 is the solar battery element structure sketch map of second embodiment of the invention.
Wherein, description of reference numerals is following:
20 solar battery element structures
21 substrates
22 metal levels
23 high resistance film
The 24p type semiconductor layer
The 25n type semiconductor layer
26 transparency conducting layers
Embodiment
Below go through the making and the use of the present preferred embodiment of the present invention.But, should be appreciated that the present invention provides many applicable devices, it can be implemented under various concrete conditions.The specific embodiment of this discussion has only been explained the concrete mode of making and use this invention, does not limit scope of the present invention.
Fig. 2 illustrates the solar battery element structure of first embodiment of the invention.Solar element structure 20 is a stepped construction, and it comprises a substrate 21, a metal level 22, a high resistance film 23, a p type semiconductor layer 24, a n type semiconductor layer 25 and a transparency conducting layer 26.Substrate 21 is generally glass substrate, and it also can be metallic plate or tinsels such as plastic cement soft board (polyimide), stainless steel, molybdenum, copper, titanium, aluminium.Aforesaid substrate 21 is not to be defined as tabularly, and only is used as into the usefulness of film base material, and other are for example spherical or other are various specific or irregularly shaped, also can be used herein.Metal level 22 can comprise for example molybdenum, chromium, vanadium or the tungsten metal level of about 0.5 to the 1 μ m of thickness, and is formed at the surface of this substrate 21, as the back of the body contact metal layer (Back contact metal layer) of battery.High resistance film 23 is formed at this metal level 22 surfaces; Preferably between 25 to 2000 dusts
, this high resistance film is the rete that resistance coefficient (Resistivity) is higher than 1x10^ (1) ohm-cm to thickness.P type semiconductor layer 24 is formed at the surface of this high resistance film 23; For example comprise Cu-In-Ga-Se-S (CIGSS), CIGS (CIGS), copper indium sulphur (CIS), CIS (CIS) or comprise the above compound-material of copper, selenium or sulphur the two or the two, about 2 to the 3 μ m of its thickness.N type semiconductor layer 25 is formed at the surface of this p type semiconductor layer 24, and forms the p-n composition surface with p type semiconductor layer 24.Transparency conducting layer 26 is formed at the surface of this n type semiconductor layer 25, and it can be selected from indium tin oxide (ITO), indium-zinc oxide (IZO), aluminium zinc oxide (AZO), gallium zinc oxide (GZO), gallium aluminium zinc oxide (GAZO), cadmium tin-oxide (CTO), zinc oxide (ZnO) and zirconium dioxide (ZrO
2) or other transparent conductive materials.
Among one embodiment, n type semiconductor layer 25 can be for example titanium oxide (TiO
2) or tungsten oxide (WO
3) waiting metal oxide, it is activity very strong (raising carrier transport factor) behind irradiation, and possesses the character of photocatalyst, because of the material of alternative traditional CdS as n type semiconductor layer 25.Among one embodiment, the thickness of n type semiconductor layer 25 is between 1～1000nm.
Can comprise metal oxide or metal nitride as high resistance film 23.Metal oxide comprises vanadium oxide (vanadium oxide), tungsten oxide (tungsten oxide), molybdenum oxide (molybdenum oxide), cupric oxide (copper oxide), iron oxide (iron oxide), tin oxide (tin oxide), titanium oxide (titaniumoxide), zinc oxide (zinc oxide), zirconia (zirconium oxide), lanthana (1anthanum oxide), niobium oxide (niobium oxide), indium tin oxide (indium tin oxide), strontium oxide strontia (strontium oxide), cadmium oxide (cadmium oxide), indium oxide (indium oxide), or the alloy of its mixture and above-mentioned metal.In addition, can cause the insulating material of capacity effect to comprise the material that silicon, aluminium oxide or other similar materials also can be used as high resistance film 23.
Fig. 3 illustrates the solar battery element structure of second embodiment of the invention.Solar element structure 30 is a stepped construction, and it comprises substrate 21, metal level 22, p type semiconductor layer 24, n type semiconductor layer 25, high resistance film 27 and transparency conducting layer 26.Compared to solar battery element structure shown in Figure 2 20, the position of high resistance film 27 changes to some extent.Originally the high resistance film 23 that is arranged at 24 of metal level 22 and p N-type semiconductor Ns is changed into the high resistance film 27 that is arranged at 26 of n type semiconductor layer 25 and transparency conducting layers.Among one embodiment, high resistance film 27 comprises zinc oxide (ZnO), same tool insulation characterisitic, and can prevent the element short circuit.Adopt for example titanium oxide (TiO equally as for 25 of n type semiconductor layer
2) or tungsten oxide (WO
3) wait the material of tool photocatalyst characteristic.
Among one embodiment, use the test result of electrical characteristic of solar battery element structure of n type semiconductor layer of tool photocatalyst characteristic of the present invention as shown in the table:
Wherein Jsc is a short-circuit current density; Voc is an open circuit voltage; Current density when Jmax is maximum power; Voltage when Vmax is maximum power; Fill factor is a fill factor, curve factor; Efficiency represents generating efficiency.The result can know thus, can increase the characteristic of carrier transport factor by photocatalyst through irradiation, and Jsc and generating efficiency the tradition solar cell device that uses CdS have practical value for high or be equal to.
To sum up, for example with titanium oxide (TiO
2) or tungsten oxide (WO
3) as the n type semiconductor layer, by the character of its photocatalyst, alternative traditional CdS, and the pollution that can effectively avoid CdS to cause.Technology contents of the present invention and technical characterstic disclose as above, yet the personage who is familiar with this technology still maybe be based on teaching of the present invention and announcement and done all replacement and modifications that does not deviate from spirit of the present invention.Therefore, protection scope of the present invention should be not limited to the content that embodiment discloses, and should comprise various do not deviate from replacement of the present invention and modifications, and is contained by following claim scope.
Claims (16)
1. solar battery element structure comprises:
One substrate;
One metal level is formed at the surface of this substrate;
One p type semiconductor layer is formed on this metal level, comprises the two or the two the above compound-material among copper, selenium and the sulphur three;
One n type semiconductor layer, tool photocatalyst characteristic is formed at the surface of this p type semiconductor layer, and forms the p-n composition surface with this p type semiconductor layer; And
One transparency conducting layer is formed on this n type semiconductor layer; And
One high resistance film is formed between this metal level and the transparency conducting layer.
2. according to the solar battery element structure of claim 1, it is characterized in that this n type semiconductor layer comprises metal oxide.
3. according to the solar battery element structure of claim 2, it is characterized in that this metal oxide comprises titanium oxide or tungsten oxide.
4. according to the solar battery element structure of claim 1, it is characterized in that the thickness of this n type semiconductor layer is between 1～1000nm.
5. according to the solar battery element structure of claim 1, it is characterized in that folded the establishing of this high resistance film is contacted with between this metal level and this p type semiconductor layer, or between this n type semiconductor layer and the transparency conducting layer.
6. according to the solar battery element structure of claim 1, it is characterized in that this high resistance film comprises metal oxide.
7. according to the solar battery element structure of claim 6; It is characterized in that this metal oxide is selected from molybdenum oxide, vanadium oxide, tungsten oxide, cupric oxide, iron oxide, tin oxide, titanium oxide, zinc oxide, zirconia, lanthana, niobium oxide, indium tin oxide, strontium oxide strontia, cadmium oxide, indium oxide or its mixture.
8. according to the solar battery element structure of claim 1, it is characterized in that this high resistance film comprises the insulating material that can cause capacity effect.
9. according to Claim 8 solar battery element structure is characterized in that this insulating material is silicon or aluminium oxide.
10. according to the solar battery element structure of claim 1, it is characterized in that this high resistance film comprises metal nitride.
11. the solar battery element structure according to claim 1 is characterized in that, the thickness of this high resistance film is between 25 to 2000 dusts.
12. the solar battery element structure according to claim 1 is characterized in that, this transparency conducting layer is selected from indium tin oxide, indium-zinc oxide, aluminium zinc oxide, gallium zinc oxide, gallium aluminium zinc oxide, cadmium tin-oxide, zinc oxide and zirconium dioxide.
13. the solar battery element structure according to claim 1 is characterized in that, this metal level comprises molybdenum, chromium, vanadium, tungsten metal.
14. the solar battery element structure according to claim 1 is characterized in that, this substrate is glass substrate, plastic cement soft board, stainless steel, molybdenum, copper, titanium, aluminium metal sheet or tinsel.
15. the solar battery element structure according to claim 1 is characterized in that, this n type semiconductor layer improves its electron mobility behind irradiation.
16. the solar battery element structure according to claim 1 is characterized in that, this p type semiconductor layer comprises Cu-In-Ga-Se-S, CIGS, copper indium sulphur or CIS.
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| CN2011100040787A CN102593208A (en) | 2011-01-11 | 2011-01-11 | Solar cell component structure |
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|---|---|---|---|
| CN2011100040787A CN102593208A (en) | 2011-01-11 | 2011-01-11 | Solar cell component structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109280886A (en) * | 2018-08-09 | 2019-01-29 | 滁州盛诺电子科技有限公司 | A kind of high resistance film and its preparation process and application |
| CN109935386A (en) * | 2017-12-15 | 2019-06-25 | 南昌欧菲光学技术有限公司 | High resistance film and composite membrane and its electronic device comprising the high resistance film |
| CN109935387A (en) * | 2017-12-15 | 2019-06-25 | 南昌欧菲光学技术有限公司 | High resistance film and composite membrane and its electronic device comprising the high resistance film |
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| US20100139757A1 (en) * | 2008-12-10 | 2010-06-10 | Ritdisplay Corporation | Photovoltaic cell structure |
| CN101764169A (en) * | 2008-12-25 | 2010-06-30 | 铼宝科技股份有限公司 | Solar cell element and production method thereof |
| US20100243044A1 (en) * | 2009-03-26 | 2010-09-30 | Ritdisplay Corporation | Photovoltaic cell structure |
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- 2011-01-11 CN CN2011100040787A patent/CN102593208A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100139757A1 (en) * | 2008-12-10 | 2010-06-10 | Ritdisplay Corporation | Photovoltaic cell structure |
| CN101764169A (en) * | 2008-12-25 | 2010-06-30 | 铼宝科技股份有限公司 | Solar cell element and production method thereof |
| US20100243044A1 (en) * | 2009-03-26 | 2010-09-30 | Ritdisplay Corporation | Photovoltaic cell structure |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109935386A (en) * | 2017-12-15 | 2019-06-25 | 南昌欧菲光学技术有限公司 | High resistance film and composite membrane and its electronic device comprising the high resistance film |
| CN109935387A (en) * | 2017-12-15 | 2019-06-25 | 南昌欧菲光学技术有限公司 | High resistance film and composite membrane and its electronic device comprising the high resistance film |
| CN109280886A (en) * | 2018-08-09 | 2019-01-29 | 滁州盛诺电子科技有限公司 | A kind of high resistance film and its preparation process and application |
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Application publication date: 20120718 |