CN104134613A - Thin film transistor and fabrication method thereof - Google Patents
Thin film transistor and fabrication method thereof Download PDFInfo
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- CN104134613A CN104134613A CN201410346471.8A CN201410346471A CN104134613A CN 104134613 A CN104134613 A CN 104134613A CN 201410346471 A CN201410346471 A CN 201410346471A CN 104134613 A CN104134613 A CN 104134613A
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- 239000010409 thin film Substances 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 76
- 238000009413 insulation Methods 0.000 claims abstract description 25
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 230000002093 peripheral effect Effects 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 claims description 119
- 239000011241 protective layer Substances 0.000 claims description 20
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 17
- 230000003647 oxidation Effects 0.000 claims description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 6
- 239000002002 slurry Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910003437 indium oxide Inorganic materials 0.000 claims description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 abstract description 3
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 3
- -1 hydrogen ions Chemical class 0.000 abstract 2
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 239000007772 electrode material Substances 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000004380 ashing Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000002956 ash Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- VUZPPFZMUPKLLV-UHFFFAOYSA-N methane;hydrate Chemical compound C.O VUZPPFZMUPKLLV-UHFFFAOYSA-N 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
A fabrication method of a thin film transistor comprises the following steps of: forming a gate electrode on a substrate; forming a gate electrode insulation layer on the gate electrode; forming a patterned semiconductor layer on the gate electrode insulation layer; forming a source electrode on the patterned semiconductor layer; oxidizing the peripheral part of the source electrode to form an oxidization layer, wherein the oxidization layer covers the source electrode and a part of the patterned semiconductor layer; forming a protection layer and hydrogen ions, wherein the protection layer covers the oxidization layer and the patterned semiconductor layer; and doping the patterned semiconductor layer which is not covered with the oxidization layer with the hydrogen ions to form a drain electrode. The invention also provides the thin film transistor.
Description
Technical field
The invention relates to a kind of thin-film transistor and manufacture method thereof, relate to especially a kind of jitty thin-film transistor and manufacture method thereof.
Background technology
In recent years, due to the progress of semiconductor fabrication, thin-film transistor (Thin-film transistor, TFT) processing procedure is also tending towards fast and is simple, make TFT be widely used in computer chip, chip for cell phone, TFT liquid crystal display (Liquid crystal display, LCD) etc.If when TFT is used in as LCD, TFT can be used as switch, control the picture element show image of LCD by the on/off of switch, therefore the switching between the on/off of TFT must be fast.What switch is whether quick relevant with the on electric current (Ion) of TFT, and the lifting of Ion can promote efficiency and the performance of TFT.And Ion is relevant with the ratio of length (L) with channel width (W), if the ratio of TFT width and length (W/L) is larger, Ion is larger.Therefore, the passage length of shortening TFT contributes to promote efficiency and the performance of TFT.
But, being limited to the limit of exposure machine equipment, current minimum feature and line-spacing are about 3 μ m, therefore the passage length of TFT cannot shorten by Jin mono-Walk, and the nargin that Ion is promoted is again limited, and then cannot effectively promote efficiency and the performance of TFT.In view of this efficiency and the performance that, how to promote TFT become an important topic.
Summary of the invention
The object of the present invention is to provide a kind of thin-film transistor (TFT) and manufacture method thereof, it can shorten TFT passage length, and effectively promotes efficiency and the performance of TFT.
The technical solution adopted in the present invention is:
A method of manufacturing thin-film transistor, comprises the following step: form gate on substrate; Form gate insulation layer on gate; Form patterned semiconductor layer in gate insulation layer; Form source electrode in patterned semiconductor layer; The peripheral part of oxidation source electrode is to form oxide layer, and wherein oxide layer covers the patterned semiconductor layer of source electrode and part; Form protective layer and hydrogen ion, wherein protective layer capping oxidation layer and patterned semiconductor layer; And the patterned semiconductor layer covering with the not oxidized layer of hydrogen ion doped, to form drain.
The step that forms patterned semiconductor layer more comprises: form semi-conducting material in gate insulation layer; Form photoresistance on semi-conducting material with half mode light shield; And taking photoresistance as shielding, semi-conducting material is carried out to etching, to form patterned semiconductor layer.
The metal that wherein material of this source electrode comprises easy oxidation, for example: aluminium, molybdenum, titanium.
Wherein be oxidized peripheral partly the comprising with nitrogen dioxide electricity slurry or oxygen plasma of this oxidation source electrode.
Wherein this protective layer and hydrogen ion are with monosilane (SiH
4) and ammonia (NH
3) form.
Wherein the thickness of this oxide layer is less than 3 μ m.
The present invention also provides a kind of thin-film transistor, comprises: substrate; Gate, is positioned on substrate; Gate insulation layer, is positioned on gate; Structure sheaf, is positioned in gate insulation layer, and structure sheaf comprises semiconductor layer and drain, and drain is adjacent with semiconductor layer is connected; Source electrode, is positioned on the semiconductor layer of part; Oxide layer, covers source electrode and the semiconductor layer not covered by source electrode; And protective layer, be positioned in drain and oxide layer, wherein, the thickness of this oxide layer is less than 3 μ m.
Wherein the material of this semiconductor layer comprises indium oxide gallium zinc (IGZO).
Wherein the material of this oxide layer comprises metal oxide.
Wherein the material of this protective layer comprises silicon nitride (Si
3n
4).
Advantage of the present invention is; to form oxide layer, and utilize the patterned semiconductor layer of the hydrogen ion doped part producing while forming protective layer by the peripheral part of oxidation source electrode, make it form drain; therefore can shorten TFT passage length, and then make efficiency and the performance boost of TFT.
Brief description of the drawings
Below in conjunction with the drawings and specific embodiments, the present invention is described in further details;
Generalized section after gate is formed on substrate when Fig. 1 is known technology manufacture thin-film transistor;
Fig. 2 is that known technology is manufactured gate insulation layer when thin-film transistor and is formed on gate, and the generalized section of semiconductor layer after being formed in gate insulation layer;
When Fig. 3 is known technology manufacture thin-film transistor, source/drain is formed at the generalized section of two rear flank of semiconductor layer;
Fig. 4 is the generalized section of the present invention after gate is formed on substrate while manufacturing thin-film transistor;
Fig. 5 is the generalized section of the present invention after gate insulation layer is formed on gate while manufacturing thin-film transistor;
Fig. 6 be the present invention while manufacturing thin-film transistor semiconductor layer material be formed in gate insulation layer, and form the generalized section of the first photoresistance after on semi-conducting material with half mode light shield;
Fig. 7 is that the present invention carries out etching as shielding to semi-conducting material taking the first photoresistance while manufacturing thin-film transistor, the semi-conducting material not covered by the first photoresistance is removed, to form the generalized section after patterned semiconductor layer;
Fig. 8 is that the present invention removes and stay the generalized section after the second photoresistance by the first photoresistance part while manufacturing thin-film transistor;
Fig. 9 is the generalized section of the present invention after source electrode material is formed on gate insulation layer, patterned semiconductor layer and the second photoresistance while manufacturing thin-film transistor;
Figure 10 is the generalized section of the present invention after the 3rd photoresistance is formed on the position that wish forms source electrode while manufacturing thin-film transistor;
Figure 11 is that the present invention is etched with the generalized section forming after source electrode while manufacturing thin-film transistor to source electrode material with the 3rd photoresistance;
Figure 12 is that the present invention removes to expose the generalized section after source electrode by the second photoresistance and the 3rd photoresistance while manufacturing thin-film transistor;
Figure 13 be the present invention while manufacturing thin-film transistor the peripheral part of source electrode oxidized to form oxide layer, wherein oxide layer covers the generalized section after the patterned semiconductor layer of not oxidized source electrode and part;
Figure 14 is the generalized section of a kind of thin-film transistor of the present invention;
Figure 15 is the enlarged drawing of the local A of a kind of thin-film transistor of the present invention.
Embodiment
Please refer to Fig. 1 to Fig. 3, it shows the generalized section of the thin-film transistor 100 of different fabrication stages of known technology.Gate 120 is formed on substrate 110 as shown in Figure 1.Then, as shown in Figure 2, gate insulation layer 130 is formed on gate 120, and semiconductor layer 140 is formed in gate insulation layer 130.Source/drain 150 is formed at the both sides of semiconductor layer 140 as shown in Figure 3, and wherein the region between two source/drains 150 is the passage 160 of thin-film transistor 100.The method of known technology manufacture thin-film transistor (TFT) is limited to the limit of exposure machine equipment, therefore minimum passage length is about 3 μ m at present, and cannot shorten by Jin mono-Walk.Therefore, the nargin of the on current boost of TFT is limited, and then cannot effectively promote the efficiency of TFT.
Therefore, the invention provides a kind of method of manufacturing thin-film transistor.Please refer to Fig. 4 to Figure 14, it shows the generalized section of the thin-film transistor 200 of different fabrication stages of the embodiment of the present invention.Gate 220 is formed on substrate 210 as shown in Figure 4.Then, as shown in Figure 5, gate insulation layer 230 is formed on gate 220.
Please refer to Fig. 6 to Fig. 8, it shows that the embodiment of the present invention forms the method for patterned semiconductor layer 240a.Semiconductor layer material 240 is formed in gate insulation layer 230 as shown in Figure 6, and forms the first photoresistance 250 on semi-conducting material 240 with half mode light shield (not illustrating).Then, as shown in Figure 7, as shielding, semi-conducting material 240 is carried out to etching taking the first photoresistance 250, the semi-conducting material 240 not covered by the first photoresistance 250 is removed, to form patterned semiconductor layer 240a.As shown in Figure 8 the first photoresistance 250 parts are removed and stay the second photoresistance 250a.The method that removes the first photoresistance 250 can be ashing (Ashing).Ashing is the process that most carbon hydrogen element in photoresist is changed into carbon dioxide, water and ash, and it can remove photoresistance not.
Half mode light shield (Half-tone mask) is to see through the film that plates one deck ' half sees through ' at light shield ground, uses the ratio that control light passes through, and reaches the effect of half exposure.After exposure, can present three kinds of exposure levels of exposed portion, half exposed portion and unexposed portion, therefore can form the photoresistance of two kinds of thickness after development.The present invention adopts half mode light shield to carry out etched object to be to expose follow-up wish and to form the position of source electrode.
Please refer to Fig. 9 to Figure 12, it shows that the embodiment of the present invention forms the method for source electrode 260a.First, as shown in Figure 9, source electrode material 260 is formed on gate insulation layer 230, patterned semiconductor layer 240a and the second photoresistance 250a.Then, as shown in figure 10, the 3rd photoresistance 252 is formed on the position of wish formation source electrode.With the 3rd photoresistance 252, source electrode material 260 is etched with and forms source electrode 260a as shown in figure 11.Afterwards, as shown in figure 12, the second photoresistance 250a and the 3rd photoresistance 252 are removed to expose source electrode 260a simultaneously.
Please refer to Figure 13, it shows that the embodiment of the present invention forms the method for oxide layer 270.As shown in figure 13, the peripheral part of source electrode 260a is oxidized to form oxide layer 270, and wherein oxide layer 270 covers the patterned semiconductor layer 240a of not oxidized source electrode 260b and part.
The material of source electrode is the metal being easily oxidized, for example: aluminium, molybdenum, titanium.The method of the peripheral part of oxidation source electrode can be oxidized with nitrogen dioxide electricity slurry or oxygen plasma.
Please refer to Figure 14, it shows that the embodiment of the present invention forms the method for protective layer 280 and drain 290.Form protective layer 280 and hydrogen ion (not illustrating), wherein protective layer 280 capping oxidation layers 270 and patterned semiconductor layer 240a.In one embodiment, protective layer 280 is with monosilane (SiH
4) and ammonia (NH
3) form, therefore can form the protective layer (Si that material is silicon nitride
3n
4protective layer), and produce hydrogen ion.The patterned semiconductor layer 240a covering with the not oxidized layer 270 of hydrogen ion doped, to form drain 290.And can not formed semiconductor layer 240b by the patterned semiconductor layer 240a of hydrogen ion doped.It should be noted that drain 290 is to be obtained through hydrogen ion doped by patterned semiconductor layer 240a, thus itself and semiconductor layer 240b (without the patterned semiconductor layer 240a of hydrogen ion doped) be located in gate insulation layer 230, and adjacent connection.
The material of patterned semiconductor layer can be metal-oxide semiconductor, for example: indium oxide gallium zinc (IGZO).In the time that material is IGZO, the IGZO of part understands positively charged and forms drain after hydrogen ion doped, and can not formed semiconductor layer by the IGZO of hydrogen ion doped.
It should be noted that; the object that method of the present invention forms oxide layer is protection patterned semiconductor layer (being the patterned semiconductor layer that oxidized layer covers) partly, avoids the patterned semiconductor layer of this part to be formed drain in the step of follow-up formation protective layer by hydrogen ion doped.Therefore, oxide layer of the present invention can separate source electrode and drain, and region between source electrode and drain is the channel of TFT, therefore the thickness of oxide layer is the passage length of TFT.If the method for oxidation is while being oxidized with electricity slurry, the radio-frequency power (RF power) that the passage length of TFT can be starched by electricity was controlled with the electricity slurry processing time.
In addition, source electrode and drain can replace mutually as the known technology in the technology of the present invention field, therefore source electrode 260b of the present invention (or 260a) also can be used as drain, and drain 290 also can be used as source electrode.
The present invention also provides a kind of thin-film transistor.Please refer to Figure 14, it shows the generalized section of one embodiment of the invention thin-film transistor 200.Thin-film transistor 200 comprises substrate 210; Gate 220, is positioned on substrate 210; Gate insulation layer 230, is positioned on gate 220; Structure sheaf 292, is positioned in gate insulation layer 230, comprises semiconductor layer 240b and drain 290, and drain 290 is adjacent with semiconductor layer 240b is connected; Source electrode 260b, is positioned on the semiconductor layer 240b of part; Oxide layer 270, covers source electrode 260b and the semiconductor layer 240b not covered by source electrode 260b; And protective layer 280, be positioned in drain 290 and oxide layer 270, wherein the thickness of oxide layer 270 is less than 3 μ m.Please refer to Figure 15, it shows the partial enlarged drawing A of Figure 14.Can be known the relevant position of learning semiconductor layer 240b, source electrode 260b, oxide layer 270 and drain 290 etc. by Figure 15, wherein the region between source electrode 260b and drain 290 is the passage 300 of thin-film transistor 200.Therefore, the thickness of oxide layer 270 is the length of passage 300.
The material of oxide layer is the oxide of the source electrode material of use, and in one embodiment, the material of oxide layer comprises metal oxide, for example: aluminium oxide, molybdenum oxide, titanium oxide.
TFT of the present invention and manufacture method thereof are utilized the characteristic of burning, can be by the peripheral part of oxidation source electrode to form oxide layer, and utilize the patterned semiconductor layer of the hydrogen ion doped part producing while forming protective layer, make it form drain.Because oxide layer can protect the patterned semiconductor layer of part not by hydrogen ion doped, therefore source electrode and drain can be separated.Mode can break through TFT passage length and be limited to the predicament of exposure machine ability by this, with existing equipment and processing procedure, can shorten the channel length of TFT, there is to produce the jitty TFT that channel length is less than 3 μ m, and then on electric current is significantly promoted, and effectively promote efficiency and the performance of TFT.
In sum, do not departing under the prerequisite of true spirit of the present invention and scope, various apparent change and replacement to those skilled in the art, within all should being included in the scope that the claims in the present invention book contains.
Claims (10)
1. a method of manufacturing thin-film transistor, is characterized in that: it comprises the following step:
Form a gate on a substrate;
Form a gate insulation layer on this gate;
Form a patterned semiconductor layer in this gate insulation layer;
Form one source pole in this patterned semiconductor layer;
Be oxidized the peripheral part of this source electrode to form an oxide layer, wherein this oxide layer covers this patterned semiconductor layer of this source electrode and part;
Form a protective layer and hydrogen ion, wherein this protective layer covers this oxide layer and this patterned semiconductor layer;
And this patterned semiconductor layer not covered by this oxide layer with this hydrogen ion doped, to form a drain.
2. a kind of method of manufacturing thin-film transistor according to claim 1, is characterized in that: the step of described this patterned semiconductor layer of formation comprises:
Form semiconductor material in this gate insulation layer;
Form a photoresistance on this semi-conducting material with half mode light shield;
And taking this photoresistance as shielding, this semi-conducting material is carried out to etching, to form this patterned semiconductor layer.
3. a kind of method of manufacturing thin-film transistor according to claim 1, is characterized in that: the material of described source electrode comprises the metal of easy oxidation.
4. a kind of method of manufacturing thin-film transistor according to claim 1, is characterized in that: be oxidized peripheral partly the comprising with nitrogen dioxide electricity slurry or oxygen plasma of described this source electrode of oxidation.
5. a kind of method of manufacturing thin-film transistor according to claim 1, is characterized in that: described protective layer and this hydrogen ion are with monosilane (SiH
4) and ammonia (NH
3) form.
6. a kind of method of manufacturing thin-film transistor according to claim 1, is characterized in that: the thickness of described oxide layer is less than 3 μ m.
7. a thin-film transistor, adopts the method manufacture of one of claim 1-6 to form, and it is characterized in that: it comprises:
One substrate;
One gate, is positioned on this substrate;
One gate insulation layer, is positioned on this gate;
One structure sheaf, is positioned in this gate insulation layer, and this structure sheaf comprises semi-conductor layer and a drain, and this drain is adjacent with semiconductor layer to be connected;
One source pole, is positioned on this semiconductor layer of part;
One oxide layer, covers this source electrode and this semiconductor layer not covered by this source electrode;
And a protective layer, be positioned in this drain and this oxide layer, wherein, the thickness of this oxide layer is less than 3 μ m.
8. a kind of thin-film transistor according to claim 7, is characterized in that: the material of described semiconductor layer comprises indium oxide gallium zinc (IGZO).
9. a kind of thin-film transistor according to claim 7, is characterized in that: the material of described oxide layer comprises metal oxide.
10. a kind of thin-film transistor according to claim 7, is characterized in that: the material of described protective layer comprises silicon nitride (Si
3n
4).
Priority Applications (1)
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|---|---|---|---|
| CN201410346471.8A CN104134613B (en) | 2014-07-21 | 2014-07-21 | A kind of thin film transistor (TFT) and its manufacturing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410346471.8A CN104134613B (en) | 2014-07-21 | 2014-07-21 | A kind of thin film transistor (TFT) and its manufacturing method |
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| Publication Number | Publication Date |
|---|---|
| CN104134613A true CN104134613A (en) | 2014-11-05 |
| CN104134613B CN104134613B (en) | 2018-12-11 |
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2014
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040086807A1 (en) * | 2002-11-06 | 2004-05-06 | Chih-Yu Peng | Method of fabricating thin film transistor |
| CN1710721A (en) * | 2004-06-17 | 2005-12-21 | 三星Sdi株式会社 | Thin film transistor, method of fabricating the same, and flat panel display having the same |
| US20100133530A1 (en) * | 2008-11-28 | 2010-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| CN101924064A (en) * | 2010-09-17 | 2010-12-22 | 华映光电股份有限公司 | Making method of thin film transistor array substrate |
| CN102184866A (en) * | 2011-04-21 | 2011-09-14 | 福建华映显示科技有限公司 | Thin-film transistor and manufacturing method thereof |
| CN103915508A (en) * | 2013-01-17 | 2014-07-09 | 上海天马微电子有限公司 | Oxide thin-film transistor with bottom-gate structure and manufacturing method thereof |
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