CN104134610A - Method for SiC (Silicon Carbide) ohmic contact by using laser irradiation - Google Patents
Method for SiC (Silicon Carbide) ohmic contact by using laser irradiation Download PDFInfo
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- CN104134610A CN104134610A CN201410341931.8A CN201410341931A CN104134610A CN 104134610 A CN104134610 A CN 104134610A CN 201410341931 A CN201410341931 A CN 201410341931A CN 104134610 A CN104134610 A CN 104134610A
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- Prior art keywords
- sic
- ohmic contact
- substrate
- laser
- irradiation
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- 238000000034 method Methods 0.000 title claims abstract description 30
- 229910010271 silicon carbide Inorganic materials 0.000 title abstract description 33
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 230000008569 process Effects 0.000 claims abstract description 8
- 239000012298 atmosphere Substances 0.000 claims abstract description 5
- 239000011261 inert gas Substances 0.000 claims abstract description 3
- 239000012530 fluid Substances 0.000 claims description 2
- 241000931526 Acer campestre Species 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 238000013532 laser treatment Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 12
- 238000010438 heat treatment Methods 0.000 abstract description 6
- 239000007772 electrode material Substances 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000004140 cleaning Methods 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 229910018540 Si C Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a method for SiC (Silicon Carbide) ohmic contact by using laser irradiation, relating to the technical field of fabrication of a semiconductor device. The method comprises the following steps of: cleaning the surface of a SiC substrate; irradiating from the front side of the substrate or the back side of the substrate by laser in a protective atmosphere of high vacuum, inert gas or inertia liquid; and preparing a contact layer on the surface of the SiC to obtain ohmic contact. Since the performance is changed due to mutual action of the SiC substrate and the laser, an electrode material is deposited on the surface of the substrate and is unnecessary to be subjected to heat treatment so as to directly obtain ohmic contact, the process flow is simplified, the influence of heat treatment on the performance of the contact layer is avoided, and technical support is provided for the improvement on the quality of the semiconductor device using the SiC as the substrate.
Description
Technical field
The present invention relates to semiconductor device preparing technical field, specifically refer to a kind of method of preparing SiC ohmic contact with laser irradiation.
Background technology
Carborundum (Silicon Carbide, SiC) is one of core material in third generation semi-conducting material.SiC material is developed in high temperature, potentiality high-power and high-frequency semiconductor device field, needed the critical process problem solving to prepare exactly high stability and low-resistance ohmic contact.Up to the present, good ohmic contact preparation remains one of most important and active several researchs aspect concerning the technique of SiC material.
Metal and semiconductor form ohmic contact and refer in contact position it is a pure resistance, and this resistance is the smaller the better.When metal is when semiconductor surface deposits, due to the existence of contact berrier, its I-V curve will present rectification characteristic, form Schottky contacts.One of method of the ohmic contact having obtained is heavy doping, and it can make potential barrier attenuation, increases tunnelling current.And for SiC material, be difficult to accomplish highly doped, and the minimal-contact resistance that this method is made is also limited to doping content.So, except utilizing high doped materials, prepare tunnelling ohmic contact, on wide bandgap semiconductor, prepare method that ohmic contact is the most general and be annealing after plated metal, to cause counterdiffusion and the chemical reaction between depositing metal layers and Semiconductor substrate, thereby reduce barrier height or thickness.But it is more difficult than other semiconductors to make on SiC surface the ohmic contact that specific contact resistivity is low, and the value height of specific contact resistivity depends on the selection of wafer surface carrier concentration, contacting metal, the condition of the preliminary treatment of wafer surface, alloying thermal annealing etc.
About utilizing laser irradiation to prepare semiconductor ohmic contact, since the seventies in last century, have been reported, and it is also fewer for SiC ohmic contact, to prepare the report of aspect.
Summary of the invention
The object of the invention is to overcome disappearance and the deficiency that above-mentioned prior art exists, propose a kind of method of preparing ohmic contact on SiC, its step is as follows:
(1) clean SiC substrate surface;
(2) irradiation is carried out at the position that the laser that is less than 500nm with wavelength need to be prepared ohmic contact to above-mentioned material surface in high vacuum, inert gas or inert fluid protection atmosphere;
(3) at the substrate surface of processing through laser irradiation, prepare contact layer, form ohmic contact.
The present invention introduces laser irradiation technology SiC substrate is processed, and can make electrode material without subsequent heat treatment, directly obtain well behaved ohmic contact after SiC surface attachment.
Tool of the present invention has the following advantages: be 1. applicable to polytype SiC material, especially for semi-insulating type SiC, can save the steps such as doping in traditional manufacturing technique or extension, greatly simplification of flowsheet; 2. can avoid the impact of heat treatment process on the component of contact layer, surface topography etc.; 3. can accurately control process range.
Embodiment
Below in conjunction with embodiment, the invention will be further described
Embodiment 1
Adopting N-shaped 4H-SiC is substrate, substrate surface is cleaned up, use after the pulse laser focusing of wavelength 248nm, single pulse energy 250mJ in argon atmosphere the region that need to prepare ohmic contact to substrate surface to carry out irradiation, adopt again magnetron sputtering method at above-mentioned substrate surface sputter layer of Ni metal, obtain ohmic contact.
Embodiment 2
Adopting N-shaped 4H-SiC is substrate, and substrate surface is cleaned up, and uses after the pulse laser focusing of wavelength 248nm 5 * 10
-4irradiation is carried out in the region that need to prepare ohmic contact to substrate surface in Pa high vacuum atmosphere, then adopts magnetron sputtering method at above-mentioned substrate surface sputter one deck Ti metal, obtains ohmic contact.
Embodiment 3
Adopting semi-insulating type 4H-SiC is substrate, substrate surface is cleaned up, use after the pulse laser focusing of wavelength 248nm in argon atmosphere the region that need to prepare ohmic contact to substrate surface to carry out irradiation, adopt again magnetron sputtering method at above-mentioned substrate surface sputter layer of Ni metal, obtain ohmic contact.
Embodiment 4
Adopting semi-insulating type 4H-SiC is substrate, and substrate surface is cleaned up, and uses after the pulse laser focusing of wavelength 310nm 5 * 10
-4scanning and irradiation is carried out in the region that need to prepare ohmic contact to substrate surface in Pa high vacuum atmosphere, then adopts magnetron sputtering method at above-mentioned substrate surface sputter Si/Ti/Au composite bed, obtains ohmic contact.
As is generally known for the SiC of conductivity type, traditional method is first to prepare contact layer to heat-treat again, so surface topography of contact layer, component etc. all will be subject to heat treated impact.And for semi-insulating type SiC, be cumbersome in its surface preparation ohmic contact, according to conventional method, need first on semi-insulation SiC surface, to prepare one deck heavily doped layer, then on heavily doped layer, prepare contact layer, finally heat-treat.And method in use the present invention, not only the SiC technique for conductivity type becomes simple, can make equally semi-insulating type SiC form ohmic contact at direct after laser irradiation and contact layer, in the middle of saving, prepare the step of heavily doped layer, greatly simplify technological process.
In sum, the present invention utilizes the change of performance after substrate Si C and laser interaction, make electrode material be deposited on substrate surface and without further heat treatment, just can directly obtain ohmic contact afterwards, simplified technological process, avoided the impact of heat treatment process on contact layer performance, for improving, take the quality of the semiconductor device that SiC is substrate technical support is provided.
Claims (4)
1. a method of processing to prepare SiC ohmic contact with laser irradiation; comprise clean SiC substrate surface, on SiC surface, prepare contact layer, obtain ohmic contact; it is characterized in that, with laser, in high vacuum, inert gas or inert fluid protection atmosphere, substrate surface is carried out to irradiation.
2. a kind of method of preparing SiC ohmic contact of processing with laser irradiation as claimed in claim 1, is characterized in that: described SiC is monocrystalline, as 4H-SiC, 6H-SiC, 3C-SiC crystal formation or polycrystalline, is conductivity type or semi-insulating type.
3. a kind of method of preparing SiC ohmic contact of processing with laser irradiation as claimed in claim 1, is characterized in that: described optical maser wavelength is less than 500nm.
4. a kind of method of preparing SiC ohmic contact of processing with laser irradiation as claimed in claim 1, is characterized in that: described laser treatment process, laser carries out irradiation or carries out irradiation from substrate back from substrate face.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410341931.8A CN104134610A (en) | 2014-07-17 | 2014-07-17 | Method for SiC (Silicon Carbide) ohmic contact by using laser irradiation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410341931.8A CN104134610A (en) | 2014-07-17 | 2014-07-17 | Method for SiC (Silicon Carbide) ohmic contact by using laser irradiation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104134610A true CN104134610A (en) | 2014-11-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410341931.8A Pending CN104134610A (en) | 2014-07-17 | 2014-07-17 | Method for SiC (Silicon Carbide) ohmic contact by using laser irradiation |
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| CN (1) | CN104134610A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113851374A (en) * | 2021-11-05 | 2021-12-28 | 南京航空航天大学 | Surface pretreatment method for power input end for improving discharge processing efficiency of semiconductor material |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080099769A1 (en) * | 2006-10-25 | 2008-05-01 | Infineon Technologies Austria Ag | PRODUCTION OF AN INTEGRATED CIRCUIT INCLUDING ELECTRICAL CONTACT ON SiC |
| CN101369600A (en) * | 2007-08-15 | 2009-02-18 | 北方工业大学 | P type silicon carbide device and preparation thereof |
| CN103700580A (en) * | 2013-12-12 | 2014-04-02 | 上海师范大学 | Method for preparing SiC ohmic contact by ultraviolet pulse laser irradiation device |
-
2014
- 2014-07-17 CN CN201410341931.8A patent/CN104134610A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080099769A1 (en) * | 2006-10-25 | 2008-05-01 | Infineon Technologies Austria Ag | PRODUCTION OF AN INTEGRATED CIRCUIT INCLUDING ELECTRICAL CONTACT ON SiC |
| CN101369600A (en) * | 2007-08-15 | 2009-02-18 | 北方工业大学 | P type silicon carbide device and preparation thereof |
| CN103700580A (en) * | 2013-12-12 | 2014-04-02 | 上海师范大学 | Method for preparing SiC ohmic contact by ultraviolet pulse laser irradiation device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113851374A (en) * | 2021-11-05 | 2021-12-28 | 南京航空航天大学 | Surface pretreatment method for power input end for improving discharge processing efficiency of semiconductor material |
| CN113851374B (en) * | 2021-11-05 | 2024-09-24 | 南京航空航天大学 | Pretreatment method for surface of power-on end for improving discharge machining efficiency of semiconductor material |
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