CN104134424A - AMOLED (Active Matrix Organic Light Emitting Diode) pixel structure and manufacturing method thereof - Google Patents

AMOLED (Active Matrix Organic Light Emitting Diode) pixel structure and manufacturing method thereof Download PDF

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Publication number
CN104134424A
CN104134424A CN201410229307.9A CN201410229307A CN104134424A CN 104134424 A CN104134424 A CN 104134424A CN 201410229307 A CN201410229307 A CN 201410229307A CN 104134424 A CN104134424 A CN 104134424A
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China
Prior art keywords
amoled
pixel
metal
electrode
holding capacitor
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CN201410229307.9A
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Chinese (zh)
Inventor
敬启毓
李莉莉
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四川虹视显示技术有限公司
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Priority to CN201410229307.9A priority Critical patent/CN104134424A/en
Publication of CN104134424A publication Critical patent/CN104134424A/en

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Abstract

The invention discloses an AMOLED (Active Matrix Organic Light Emitting Diode) pixel structure, which comprises a pixel light emitting region, a power line VDD, a scanning line SCAN, a data line DATA, a switching transistor, a driving transistor and a storage capacitor, wherein the power line VDD metal forms the upper electrode of the storage capacitor; a corresponding metal layer is located right below the power line VDD metal to serve as the lower electrode of the storage capacitor; and an interval medium ILD exists between the upper electrode and the lower electrode. The AMOLED (Active Matrix Organic Light Emitting Diode) pixel structure has the beneficial effects that through arranging the storage capacitor below the power line VDD, the area of the basic pixel driving circuit is narrowed, the opening rate of a bottom transmitting AMOLED device is increased, and power consumption efficiency and the service life of the device are improved. According to the above scheme, if the size of the pixel circuit is narrowed through optimizing the storage capacitor of the thin-film transistor while the driving performance of the pixel circuit is not influenced, the opening rate of the pixel is increased, and the power consumption efficiency and the service life of the device are improved.

Description

A kind of AMOLED dot structure and preparation method thereof

Technical field

The present invention relates to active matrix type organic electroluminescent display technique field, in particular to the dot structure of the higher AMOLED display device of a kind of aperture opening ratio and the method for making of making above-mentioned dot structure.

Background technology

Active matrix type organic light emitting diode (Active Matrix Organic Light Emitting Diode, AMOLED) device is a kind of New flat panel display part of following preparation large scale, high definition organic display equipment.AMOLED device adopts independently thin film transistor (TFT) (TFT) to go to control each some pixel, and each some pixel all can drive luminous continuously and independently.As Fig. 1, typical AMOLED device comprises that at the basic driver circuit (containing compensation) of a Sub Pixel (some pixel) 10 a switch addressing TFT (T1) 60, OLED drive TFT (T2) 70 and one are used for maintaining the storage capacitors (Cst) 50 of pixel data voltage in the frame period.

1, wherein SCAN40, DATA20 and VDD30 represent respectively sweep trace, data line and driving power supply line, the grid of addressing TFT (T1) 60 is connected with sweep trace (SCAN) 40 and data line (DATA) 20 respectively with source electrode, for pixel voltage is also carried out to addressing with regard to DATA data voltage; 2, scanning metal (SCAN), intermediate insulating layer (ILD) and power supply metal (VDD) form memory capacitance (Cst) 50 as bottom electrode, middle insulated medium and top electrode respectively, storage capacitors (Cst) is electrical connected by the drain electrode of contact hole and T160, input the data voltage of this pixel cell for storing address period, to remain lasting luminous in the frame period; This memory capacitance occupies the subregion of pixel electrode; 3, drive TFT (T2) 70 is connected with Cst50 bottom electrode metal by grid, is connected, for controlling the drive current of OLED device by source electrode with power lead VDD30.

Picture element array structure as shown in Figure 1, the wide part that the AMOLED device of end emission type sends all, by image element circuit region (2T1C basic driver circuit) restriction, causes aperture opening ratio lower, general about 30%-50%.And along with the raising of image resolution ratio, aperture opening ratio also can reduce.Aperture opening ratio is low, and the current density of the device that can cause flowing through is large, accelerates device aging, finally shortens the pixel life-span.

Summary of the invention

The object of the invention is to be limited by the circuit region of pixel in order to solve existing AMOLED device light-emitting zone, cause the deficiency that aperture opening ratio is lower, the method for making that has proposed a kind of AMOLED dot structure and made above-mentioned dot structure.

Technical scheme of the present invention is: a kind of AMOLED dot structure, comprise pixel light-emitting zone, power lead VDD, sweep trace SCAN, data line DATA, switching transistor, driving transistors and holding capacitor, it is characterized in that, power lead VDD metal forms the top electrode of described holding capacitor, under being positioned at power lead VDD metal, comprise the bottom electrode of corresponding metal level as holding capacitor, between top electrode and bottom electrode, comprise blank medium ILD.

Further, switching transistor and driving transistors shift to holding capacitor position in 2T1C circuit, after switching transistor and driving transistors shift using sub-pixel light-emitting zone as filling up.

The method for making of above-mentioned AMOLED dot structure, comprise AMOLED production process, it is characterized in that, before forming VDD, make the bottom electrode of layer of metal as storage capacitors Cst in the position that forms power lead VDD, the power lead VDD forming afterwards, as the top electrode of holding capacitor, makes blank medium ILD between top electrode and bottom electrode.

Further, the bottom electrode of above-mentioned holding capacitor is made and is synchronizeed and carry out with sweep trace SCAN and transistorized gate pole metal GATE.

Beneficial effect of the present invention: AMOLED dot structure of the present invention is in order to improve the aperture opening ratio of AMOLED device, improve efficiency and the life-span of device, optimize the position of memory capacitance, designed a kind of picture element array structure that improves end transmitting AMOLED device opening rate.Specifically, by holding capacitor is placed under power lead VDD, dwindle base pixel driving circuit area, increased end transmitting AMOLED device opening rate, favourable power consumption efficiency and the life-span of improving device.By such scheme, if can be by optimizing the memory capacitance of thin film transistor (TFT), the size of dwindling image element circuit, and do not affect the driveability of image element circuit, and will increase pixel aperture ratio, improve device power consumption efficiency and life-span.

Brief description of the drawings

Fig. 1 is the AMOLED dot structure schematic diagram that existing 2T1C drives;

Fig. 2 deposits GATE, SCAN, Cst bottom electrode cross section metal figure during AMOLED dot structure of the present invention is made;

Fig. 3 deposits GATE, SCAN, Cst bottom electrode metal vertical view during AMOLED dot structure of the present invention is made;

Fig. 4 is that AMOLED dot structure of the present invention is made rear S/D (transistor source and the drain electrode) sectional view of intermediate ion injection;

Fig. 5 is that AMOLED dot structure of the present invention is made the rear S/D vertical view of intermediate ion injection;

Fig. 6 is the heavy film sectional view of ILD during AMOLED dot structure of the present invention is made;

Fig. 7 is contact hole sectional view during AMOLED dot structure of the present invention is made;

Fig. 8 is contact hole vertical view during AMOLED dot structure of the present invention is made;

Fig. 9 is S/D during AMOLED dot structure of the present invention is made, DATA electrode, VDD electrode, Cst top electrode sectional view;

Figure 10 is S/D during AMOLED dot structure of the present invention is made, DATA electrode, VDD electrode, Cst upper electrode arrangement vertical view;

Figure 11 is PSV film forming sectional view during AMOLED dot structure of the present invention is made.

Embodiment

Embodiments of the invention are that principle according to the present invention designs, and below in conjunction with accompanying drawing and specific embodiment, the invention will be further elaborated.

A kind of AMOLED dot structure of the present embodiment, comprise pixel light-emitting zone, power lead VDD, sweep trace SCAN, data line DATA, switching transistor, driving transistors and holding capacitor, power lead VDD metal forms the top electrode of described holding capacitor, under being positioned at power lead VDD metal, comprise the bottom electrode of corresponding metal level as holding capacitor, between top electrode and bottom electrode, comprise blank medium ILD.In order to make pixel region compactness, optimize pixel display structure, switching transistor and driving transistors shift to holding capacitor position in 2T1C circuit, and the region after switching transistor and driving transistors shift is as sub-pixel light-emitting zone.

The method for making of above-mentioned AMOLED dot structure, comprise AMOLED production process, before forming VDD, make the bottom electrode of layer of metal as storage capacitors Cst in the position that forms power lead VDD, the power lead VDD forming afterwards, as the top electrode of holding capacitor, makes blank medium ILD between top electrode and bottom electrode.Based on existing pixel manufacture craft feature, in order to simplify processing step, to enhance productivity, the bottom electrode of above-mentioned holding capacitor is made and is synchronizeed and carry out with sweep trace SCAN and transistorized gate pole metal GATE.

Briefly: the solution of the present invention is to take full advantage of the region that power lead VDD covers, before forming VDD, while doing the GATE metal of SCAN and TFT, below VDD region, first make the bottom electrode of layer of metal as storage capacitors (Cst), and need not make separately the bottom electrode of memory capacitance of region, be that memory capacitance and power lead account for the same area (the middle ILD of use is as blank medium) altogether, greatly dwindle the area of image element circuit, and memory capacitance need to be determined area according to design, size is controlled.And identical with existing circuit electrical connection state as concrete circuit electrical connection state: the grid of addressing TFT (switching transistor) and drive TFT (driving transistors) is connected with sweep trace SCAN, storage capacitors bottom electrode respectively, and source electrode is connected with power lead VDD with data line DATA respectively.Wherein memory capacitance is to be coupled to form by the power lead VDD of GATE metal level and its top, and the part of grid pole that its electric capacity contact hole is exposed by drive TFT forms, and is connected with the drain electrode electricity of addressing TFT.Wherein the size of memory capacitance is determined by bottom electrode GATE metallic region area, can maintain voltage request design according to pixel.

Be below the detailed step of making the AMOLED of the embodiment of the present invention:

As shown in Fig. 2-Figure 11, comprise step:

1, on the glass substrate 100 after cleaning, make three layers or two-layer process, complete the deposition of buffer101 deposition and a-Si;

2, on buffer101, make P-Si layer by low temperature polycrystalline silicon technique, and use PHOTO to form ACTIVE region 102, then deposit GI layer 103 by PECVD;

3, on GI layer 103, pass through PVD process deposits GATE, the metal level of SCAN and storage capacitors bottom electrode, form GATE metal 104 by PHOTO technique and etching technics, SCAN metal 105 and Cst bottom electrode metal 106, its locations of structures as shown in Figure 3, the GATE metal 104a of T1 is connected with SCAN metal 105, and the GATE metal 104b of T2 is connected with Cst bottom electrode metal 106;

4, form TFT raceway groove and source, drain region 107 by Implantation as shown in Figure 4, described raceway groove vertical view as shown in Figure 5;

5, on the GATE in same layer, SACN, Cst bottom electrode metal, make ILD (intermediate insulating layer) 108 by PECVD as shown in Figure 6, be used for isolating GATE, SACN, Cst bottom electrode metal and power vd D, DATA electrode metal, the while is as the intermediate medium of memory capacitance;

6, as shown in Figure 7, source/drain contact hole 109 and the T2 source/drain contact hole 110 of the mode expose portion TFT raceway groove T1 by etching, described contact hole is for source-drain electrode area Ohmic contact; Simultaneously by the mode expose portion T2 grid G ATE104b of etching and the shared contact hole 111 of capacitor lower electrode (as Fig. 8 overlooks);

7, as Fig. 9, by PVD mode above-mentioned 6) make layer of metal layer on described process structure, as source/drain electrode connection metal of TFT, and being used for making DATA electrode and power lead VDD, described power lead VDD is simultaneously also as the top electrode (being that VDD and storage capacitors top electrode share) of storage capacitors.After completing, PVD forms source electrode 112a and the drain electrode 112b of T1 by PHOTO technique, the source electrode 113a of T2 and drain electrode 113b, top electrode common area metal 115 and the DATA electrode 116 of power lead VDD and storage capacitors.As shown in figure 10, the source electrode 112a of described T1 is connected with DATA electrode 116, and the source electrode 113a of T2 is connected with power vd D115, and the drain electrode 112b of T1 is connected with the grid 104b of T2 by gate contact hole 111 on the one hand, plays the effect that drives T2 conducting; Be connected with memory capacitance Cst bottom electrode by gate contact hole 111 on the other hand, for charging to memory capacitance;

8, can realize by above-mentioned 7 structure, in the time that strobe pulse acts on T1, data voltage makes T2 conducting driving OLED, and storage capacitors Cst is charged simultaneously;

9, on above-mentioned 7 process structure, use PECVD to make passivation layer PASSIVATION117, as shown in figure 11;

10, make pixel boundary and define a layer BANK.

Those of ordinary skill in the art will appreciate that, embodiment described here is in order to help reader understanding's principle of the present invention, should be understood to that protection scope of the present invention is not limited to such special statement and embodiment.Those of ordinary skill in the art can make various other various concrete distortion and combinations that do not depart from essence of the present invention according to these technology enlightenments disclosed by the invention, and these distortion and combination are still in protection scope of the present invention.

Claims (4)

1. an AMOLED dot structure, comprise pixel light-emitting zone, power lead VDD, sweep trace SCAN, data line DATA, switching transistor, driving transistors and holding capacitor, it is characterized in that, power lead VDD metal forms the top electrode of described holding capacitor, under being positioned at power lead VDD metal, comprise the bottom electrode of corresponding metal level as holding capacitor, between top electrode and bottom electrode, comprise blank medium ILD.
2. AMOLED dot structure according to claim 1, is characterized in that, switching transistor and driving transistors shift to holding capacitor position in 2T1C circuit, after switching transistor and driving transistors shift using sub-pixel light-emitting zone as filling up.
The method for making of 3.AMOLED dot structure, comprise AMOLED production process, it is characterized in that, before forming VDD, make the bottom electrode of layer of metal as storage capacitors Cst in the position that forms power lead VDD, the power lead VDD forming afterwards, as the top electrode of holding capacitor, makes blank medium ILD between top electrode and bottom electrode.
4. method according to claim 3, is characterized in that, the bottom electrode of holding capacitor is made and synchronizeed and carry out with sweep trace SCAN and transistorized gate pole metal GATE.
CN201410229307.9A 2014-05-27 2014-05-27 AMOLED (Active Matrix Organic Light Emitting Diode) pixel structure and manufacturing method thereof CN104134424A (en)

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CN106920814A (en) * 2015-12-28 2017-07-04 昆山工研院新型平板显示技术中心有限公司 The manufacture method of OLED pixel domain and OLED
CN107871472A (en) * 2016-09-26 2018-04-03 株式会社日本显示器 Display device
WO2018223493A1 (en) * 2017-06-08 2018-12-13 深圳市华星光电半导体显示技术有限公司 Amoled display panel structure
US10181505B2 (en) 2017-06-08 2019-01-15 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Active matrix organic light emitting diode display panel structure

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CN103199096A (en) * 2013-04-18 2013-07-10 上海和辉光电有限公司 Thin film transistor array substrate and manufacturing method thereof
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CN102708800A (en) * 2012-05-31 2012-10-03 广州新视界光电科技有限公司 Active matrix organic light-emitting diode backboard unit pixel circuit
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US10181505B2 (en) 2017-06-08 2019-01-15 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Active matrix organic light emitting diode display panel structure

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