CN104130749A - Processing technology of silicon oxide polishing abrasive - Google Patents
Processing technology of silicon oxide polishing abrasive Download PDFInfo
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- CN104130749A CN104130749A CN201410342053.1A CN201410342053A CN104130749A CN 104130749 A CN104130749 A CN 104130749A CN 201410342053 A CN201410342053 A CN 201410342053A CN 104130749 A CN104130749 A CN 104130749A
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- silicon oxide
- polishing abrasive
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Abstract
The invention discloses a processing technology of a silicon oxide polishing abrasive. Through four steps of 1, preparing raw materials, 2, sieving the raw materials and carrying out stirring, 3, carrying out deep crushing and rolling molding in a bowl mill and 4, carrying out secondary sieving after discharging, the silicon oxide polishing abrasive is obtained. The processing technology utilizes the bowl mill to realize deep crushing and rolling molding, utilizes the sieve to realize selection of the silicon oxide polishing abrasive having uniform particle sizes, and produces the silicon oxide polishing abrasive having water content of 13.5% at a normal temperature and having performances obviously superior to those of a polishing abrasive prepared by the prior art. The processing technology greatly improves polishing abrasive hardness, size stability, compactness, fineness, hot and cold fatigue performances, fracture toughness, creep resistance and wear resistance and solves the problem of high brittleness of a polishing abrasive prepared by the traditional sintering technology.
Description
Technical field
The invention belongs to rubbing down materials processing technology field, relate to a kind of complete processing of silicon oxide polish abrasive.
Background technology
In prior art, polishing chip is that to take the powder such as corundum or silicon carbide be abrasive material, and the small-sized polishing abrasive tool of manufacturing by the method for sintering or cast is mainly used in the surface of the various metals of polishing grinding or non-metal article.Polishing chip for medal polish typically uses the polishing chip that high temperature sintering palm fibre corundum is manufactured, impact due to existing manufacturing process, there is the shortcomings such as quality of finish is poor, fastness to rubbing is poor in existing polishing chip, result of use is not ideal enough, polishing, the ground of therefore a lot of high requests remains the polishing chip that adopts import, so greatly improved the production cost of processing.
Summary of the invention
Technical problem to be solved by this invention is just to provide a kind of complete processing of silicon oxide polish abrasive, can the contracting process-cycle, improve yield rate, improve hardness, dimensional stability, compactness, smooth finish, cold and hot fatigability, fracture toughness property, creep-resistant property and the wear resisting property of finished product simultaneously.
For solving the problems of the technologies described above, the present invention adopts following technical scheme: a kind of complete processing of silicon oxide polish abrasive, comprises the following steps:
Step 1: prepare respectively by weight percentage following raw material: silicon oxide 30～40%, potassium felspar sand 20～30%, brown corundum 20～30%, kaolin 10～20%, quartz 1～5%, nano-ceramic powder transparent liquid 5～15%; Each weight percentages of components summation is 100%, and wherein, the solid content of described nano-ceramic powder transparent liquid is 20～50%;
Step 2: silicon oxide, potassium felspar sand, brown corundum, kaolin, quartzy each raw material are sifted out, and sieve is 400～600 orders, and adds nano-ceramic powder transparent liquid to stir, and obtains pasty state compound; Through the screening of sifting out, can obtain the more uniform material of particle diameter ratio, each uniform component distribution in the pasty state compound that is conducive to form, is conducive to the pulverizing of postorder ball mill.
Step 3: the pasty state compound that step 2 is obtained adds in ball mill, carry out degree of depth pulverizing and rolling moulding, the rotating speed of ball mill is 45r/min, rolling time is 4～5h, spray water in rolling limit, limit in ball mill, every 15min feed supplement, feed supplement number of times is 2～10 times, each feed supplement is the mixed powder of silicon oxide, potassium felspar sand, brown corundum, kaolin, quartz, and the weight of feed supplement is 3～8% of pasty state compound; The degree of depth of ball mill is pulverized and rolling moulding, and the pore of generation is less, is conducive to increase the compactness of material, improves density and hardness, in the feed supplement of rolling process discontinuous, can obtain spherical polish abrasive, and improve its dimensional stability and smooth finish.
Step 4: after discharging, secondary sieves, sieve is 800～1000 orders, obtains silicon oxide polish abrasive.Secondary sieves, and can guarantee that the polish abrasive particle diameter obtaining is even, excellent performance.
Preferably, in step 3, feed supplement number of times is 4～6 times.
Preferably, in step 3, the weight of feed supplement is 3～5% of pasty state compound.
Compared with prior art, advantage of the present invention is: adopt ball mill to carry out degree of depth pulverizing and rolling moulding to material, and through sifting out, obtain the uniform silicon oxide polish abrasive of particle diameter, the silicon oxide polish abrasive obtaining at normal temperatures water content is 13.5%, and the polish abrasive obtaining than the sintering process of prior art has obvious excellent properties.The present invention can improve hardness, dimensional stability, compactness, smooth finish, cold and hot fatigability, fracture toughness property, creep-resistant property and the wear resisting property of polish abrasive greatly, has overcome the high shortcoming of polish abrasive fragility that conventional sintering technique obtains.
Below in conjunction with embodiment, the invention will be further described:
Embodiment
The complete processing embodiment 1 of a kind of silicon oxide polish abrasive of the present invention, comprises the following steps:
Step 1: prepare respectively by weight percentage following raw material: silicon oxide 30～40%, potassium felspar sand 20～30%, brown corundum 20～30%, kaolin 10～20%, quartz 1～5%, nano-ceramic powder transparent liquid 5～15%; Each weight percentages of components summation is 100%, and wherein, the solid content of described nano-ceramic powder transparent liquid is 20～50%;
Step 2: silicon oxide, potassium felspar sand, brown corundum, kaolin, quartzy each raw material are sifted out, and sieve is 400 orders, and adds nano-ceramic powder transparent liquid to stir, and obtains pasty state compound; Through the screening of sifting out, can obtain the more uniform material of particle diameter ratio, each uniform component distribution in the pasty state compound that is conducive to form, is conducive to the pulverizing of postorder ball mill.
Step 3: the pasty state compound that step 2 is obtained adds in ball mill, carry out degree of depth pulverizing and rolling moulding, the rotating speed of ball mill is 45r/min, rolling time is 5h, spray water in rolling limit, limit in ball mill, every 15min feed supplement, feed supplement number of times is 8 times, each feed supplement is the mixed powder of silicon oxide, potassium felspar sand, brown corundum, kaolin, quartz, and the weight of feed supplement is 5% of pasty state compound; The degree of depth of ball mill is pulverized and rolling moulding, and the pore of generation is less, is conducive to increase the compactness of material, improves density and hardness, in the feed supplement of rolling process discontinuous, can obtain spherical polish abrasive, and improve its dimensional stability and smooth finish.
Step 4: after discharging, secondary sieves, sieve is 800 orders, obtains silicon oxide polish abrasive.Secondary sieves, and can guarantee that the polish abrasive particle diameter obtaining is even, excellent performance.
The polish abrasive that adopts conventional sintering technique to obtain, can form a lot of pores, and air vent aperture is generally larger, makes polish abrasive very crisp, frangible, and heat resisting temperature is generally at 1300～1400 ℃, is difficult to meet production and application needs, and sintering time needs 36～40h, sintering period is long, and complete processing shaping cycle of the present invention shortens greatly, the polish abrasive heat resisting temperature obtaining improves greatly, can reach more than 1700 ℃.
The complete processing embodiment 2 of a kind of silicon oxide polish abrasive of the present invention, comprises the following steps:
Step 1: prepare respectively by weight percentage following raw material: silicon oxide 30～40%, potassium felspar sand 20～30%, brown corundum 20～30%, kaolin 10～20%, quartz 1～5%, nano-ceramic powder transparent liquid 5～15%; Each weight percentages of components summation is 100%, and wherein, the solid content of described nano-ceramic powder transparent liquid is 20～50%;
Step 2: silicon oxide, potassium felspar sand, brown corundum, kaolin, quartzy each raw material are sifted out, and sieve is 600 orders, and adds nano-ceramic powder transparent liquid to stir, and obtains pasty state compound; Through the screening of sifting out, can obtain the more uniform material of particle diameter ratio, each uniform component distribution in the pasty state compound that is conducive to form, is conducive to the pulverizing of postorder ball mill.
Step 3: the pasty state compound that step 2 is obtained adds in ball mill, carry out degree of depth pulverizing and rolling moulding, the rotating speed of ball mill is 45r/min, rolling time is 4h, spray water in rolling limit, limit in ball mill, every 15min feed supplement, feed supplement number of times is 5 times, each feed supplement is the mixed powder of silicon oxide, potassium felspar sand, brown corundum, kaolin, quartz, and the weight of feed supplement is 3% of pasty state compound; The degree of depth of ball mill is pulverized and rolling moulding, and the pore of generation is less, is conducive to increase the compactness of material, improves density and hardness, in the feed supplement of rolling process discontinuous, can obtain spherical polish abrasive, and improve its dimensional stability and smooth finish.
Step 4: after discharging, secondary sieves, sieve is 1000 orders, obtains silicon oxide polish abrasive.Secondary sieves, and can guarantee that the polish abrasive particle diameter obtaining is even, excellent performance.The silicon oxide polish abrasive that this embodiment obtains, heat resisting temperature, up to more than 1750 ℃, can be used for 1380～1450 ℃ of aluminium processed of aluminium manufacturer or steel-making.
The foregoing is only specific embodiments of the invention, but technical characterictic of the present invention is not limited to this, any those skilled in the art is in the field of the invention, and the variation of doing or modification are all encompassed among the scope of the claims of the present invention.
Claims (3)
1. a complete processing for silicon oxide polish abrasive, is characterized in that: comprise the following steps:
Step 1: prepare respectively by weight percentage following raw material: silicon oxide 30～40%, potassium felspar sand 20～30%, brown corundum 20～30%, kaolin 10～20%, quartz 1～5%, nano-ceramic powder transparent liquid 5～15%; Each weight percentages of components summation is 100%, and wherein, the solid content of described nano-ceramic powder transparent liquid is 20～50%;
Step 2: silicon oxide, potassium felspar sand, brown corundum, kaolin, quartzy each raw material are sifted out, and sieve is 400～600 orders, and adds nano-ceramic powder transparent liquid to stir, and obtains pasty state compound;
Step 3: the pasty state compound that step 2 is obtained adds in ball mill, carry out degree of depth pulverizing and rolling moulding, the rotating speed of ball mill is 45r/min, rolling time is 4～5h, spray water in rolling limit, limit in ball mill, every 15min feed supplement, feed supplement number of times is 2～10 times, each feed supplement is the mixed powder of silicon oxide, potassium felspar sand, brown corundum, kaolin, quartz, and the weight of feed supplement is 3～8% of pasty state compound; Step 4: after discharging, secondary sieves, sieve is 800～1000 orders, obtains silicon oxide polish abrasive.
2. the complete processing of a kind of silicon oxide polish abrasive as claimed in claim 1, is characterized in that: in step 3, feed supplement number of times is 4～6 times.
3. the complete processing of a kind of silicon oxide polish abrasive as claimed in claim 1, is characterized in that: in step 3, the weight of feed supplement is 3～5% of pasty state compound.
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| CN201410342053.1A CN104130749A (en) | 2014-07-17 | 2014-07-17 | Processing technology of silicon oxide polishing abrasive |
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| CN201410342053.1A CN104130749A (en) | 2014-07-17 | 2014-07-17 | Processing technology of silicon oxide polishing abrasive |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104592939A (en) * | 2015-01-20 | 2015-05-06 | 安徽斯瑞尔阀门有限公司 | White corundum-nano ceramic compound paste for grinding sealing surface of valve |
| CN104592936A (en) * | 2015-01-04 | 2015-05-06 | 和县科嘉阀门铸造有限公司 | Nano silicon carbide grinding paste for sealing surface of valve and preparation method of nano silicon dioxide grinding paste |
| CN104610914A (en) * | 2015-01-04 | 2015-05-13 | 和县科嘉阀门铸造有限公司 | Boron carbide-nano ceramic composite paste for valve sealing surface grinding |
| CN105367059A (en) * | 2015-10-27 | 2016-03-02 | 合肥龙多电子科技有限公司 | Nano-clay-containing toughened dense silicon carbide-based ceramic circuit board substrate material and preparation method thereof |
| CN105367072A (en) * | 2015-10-27 | 2016-03-02 | 合肥龙多电子科技有限公司 | High relative density crack-resistant aluminium nitride-silicon carbide composite circuit board substrate material and preparation method thereof |
| CN105367061A (en) * | 2015-10-27 | 2016-03-02 | 合肥龙多电子科技有限公司 | Nano molybdenum disilicide-enhanced high-thermal-conductivity silicon carbide-based ceramic circuit board substrate material and preparation method thereof |
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| CN1982398A (en) * | 2005-12-16 | 2007-06-20 | 湖州星星研磨有限公司 | Polishing grinding block |
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2014
- 2014-07-17 CN CN201410342053.1A patent/CN104130749A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1982398A (en) * | 2005-12-16 | 2007-06-20 | 湖州星星研磨有限公司 | Polishing grinding block |
Non-Patent Citations (1)
| Title |
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| 百度百科: "纳米陶瓷粉透明液体", 《HTTP://BAIKE.BAIDU.COM/LINK?URL=PDB5ZUYA3ZHWWW6ARMPINSWL6_S7RTM4AMLVRQYRJMI1WTSCRN_0DPWSUJLSL7JNTFPYLDRQXEWLBKUP5VF4Z_》, 14 May 2014 (2014-05-14), pages 1 - 2 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104592936A (en) * | 2015-01-04 | 2015-05-06 | 和县科嘉阀门铸造有限公司 | Nano silicon carbide grinding paste for sealing surface of valve and preparation method of nano silicon dioxide grinding paste |
| CN104610914A (en) * | 2015-01-04 | 2015-05-13 | 和县科嘉阀门铸造有限公司 | Boron carbide-nano ceramic composite paste for valve sealing surface grinding |
| CN104592939A (en) * | 2015-01-20 | 2015-05-06 | 安徽斯瑞尔阀门有限公司 | White corundum-nano ceramic compound paste for grinding sealing surface of valve |
| CN105367059A (en) * | 2015-10-27 | 2016-03-02 | 合肥龙多电子科技有限公司 | Nano-clay-containing toughened dense silicon carbide-based ceramic circuit board substrate material and preparation method thereof |
| CN105367072A (en) * | 2015-10-27 | 2016-03-02 | 合肥龙多电子科技有限公司 | High relative density crack-resistant aluminium nitride-silicon carbide composite circuit board substrate material and preparation method thereof |
| CN105367061A (en) * | 2015-10-27 | 2016-03-02 | 合肥龙多电子科技有限公司 | Nano molybdenum disilicide-enhanced high-thermal-conductivity silicon carbide-based ceramic circuit board substrate material and preparation method thereof |
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Application publication date: 20141105 |