CN104124389A - Organic light-emitting device and preparation method thereof - Google Patents
Organic light-emitting device and preparation method thereof Download PDFInfo
- Publication number
- CN104124389A CN104124389A CN201310157847.6A CN201310157847A CN104124389A CN 104124389 A CN104124389 A CN 104124389A CN 201310157847 A CN201310157847 A CN 201310157847A CN 104124389 A CN104124389 A CN 104124389A
- Authority
- CN
- China
- Prior art keywords
- biphenyl
- layer
- bis
- thickness
- pyridine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
Abstract
The invention discloses an organic light-emitting device. The organic light-emitting device comprises a transmitting substrate, a first anode, a first light-emitting unit, a cathode, a second light-emitting unit and a second anode which are laminated sequentially, wherein the first anode is made from at least one of indium tin oxide, indium zinc oxide, aluminum zinc oxide and gallium zinc oxide, the cathode is made from at least one of silver, aluminum, samarium and ytterbium, and the second anode is made from at least one of silver, aluminum and gold. Both surfaces of the organic light-emitting device can give out light and the organic light-emitting device is simple in structure. The invention further discloses a preparation method of the organic light-emitting device.
Description
Technical field
The present invention relates to a kind of organic electroluminescence device and preparation method thereof.
Background technology
The principle of luminosity of organic electroluminescence device (OLED) is based under the effect of extra electric field, electronics is injected into organic lowest unocccupied molecular orbital (LUMO) from the first anode, and hole is injected into organic highest occupied molecular orbital (HOMO) from second plate.Electronics and hole meet at luminescent layer, compound, form exciton, exciton moves under electric field action, and energy is passed to luminescent material, and excitation electron is from ground state transition to excitation state, excited energy, by Radiation-induced deactivation, produces photon, discharges luminous energy.
Existing OLED major part can only go out light from a side-draw of second plate or the first anode, make end transmitting or top transmitting OLED device.The OLED device that double-side shows adopts two organic electroluminescence devices to fit together back-to-back simultaneously, such structure more complicated that becomes.
Summary of the invention
Based on this, be necessary to provide comparatively simple organic electroluminescence device of a kind of double-side and structure and preparation method thereof.
A kind of organic electroluminescence device, comprise the light-transparent substrate, the first anode, the first luminescence unit, negative electrode, the second luminescence unit and the second plate that stack gradually, the material of the described first anode is selected from least one in indium tin oxide, indium-zinc oxide, aluminium zinc oxide and gallium zinc oxide, the material of described negative electrode is selected from least one in silver, aluminium, samarium and ytterbium, and the material of described second plate is selected from least one in silver, aluminium and gold.
In an embodiment, the thickness of the described first anode is 70nm～200nm therein, and the thickness of described negative electrode is 18nm～30nm, and the thickness of described second plate is 15nm～25nm.
In an embodiment, described the first luminescence unit comprises the first luminescent layer therein, and described the second luminescence unit comprises the second luminescent layer, and one in described the first luminescent layer and described the second luminescent layer is red light emitting layer, and another is blue light-emitting layer.
Therein in an embodiment, the material of described red light emitting layer is 4-(dintrile methyl)-2-butyl-6-(1, 1, 7, 7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans is entrained in the mixture forming in oxine aluminium, two (2-(benzo [b] thiophene-2-yl) pyridine) (acetylacetone,2,4-pentanedione) closes iridium and is entrained in 4, the mixture or the guest materials that in 4'-bis-(9-carbazole) biphenyl, form are entrained in N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1, 1'-biphenyl-4, the mixture forming in 4'-diamines, described guest materials is selected from (acetylacetone,2,4-pentanedione) and closes iridium and three (1-phenyl-isoquinolin) and close at least one in iridium, described 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl) mass ratio of-4H-pyrans and described oxine aluminium is 1:100～10:100, described two (2-(benzo [b] thiophene-2-yl) pyridine) (acetylacetone,2,4-pentanedione) closes iridium and described 4, the mass ratio of 4'-bis-(9-carbazole) biphenyl is 1:100～10:100, described guest materials and described N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4, the mass ratio of 4'-diamines is 1:100～10:100.
Therein in an embodiment, the material of described blue light-emitting layer is mixture or the fluorescent material that material of main part and phosphor material doping form, described material of main part is selected from 1, 3, 5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene and 4, at least one in 4'-bis-(9-carbazole) biphenyl, described phosphor material is selected from two (4, 6-difluorophenyl pyridine-N, C2) pyridine formyl closes iridium and two (4, 6-difluorophenyl pyridine)-tetra-(1-pyrazolyl) boric acid closes a kind of in iridium, the mass ratio of described phosphor material and described material of main part is 2:100～10:100, described fluorescent material is selected from 4, 4'-bis-(2, 2-diphenylethyllene)-1, 1'-biphenyl and 4, at least one in 4'-two [4-(di-p-tolyl is amino) styryl] biphenyl.
A preparation method for organic electroluminescence device, comprises the following steps:
At light-transparent substrate surface vacuum sputter, prepare the first anode, the material of the described first anode is selected from least one in indium tin oxide, indium-zinc oxide, aluminium zinc oxide and gallium zinc oxide;
On the surface of the described first anode, prepare the first luminescence unit;
Surperficial evaporation at described the first luminescence unit is prepared negative electrode, and the material of described negative electrode is selected from least one in silver, aluminium, samarium and ytterbium;
On the surface of described negative electrode, prepare the second luminescence unit; And
Surperficial evaporation at described the second luminescence unit is prepared second plate, and the material of described second plate is selected from least one in silver, aluminium and gold.
In an embodiment, the thickness of the described first anode is 70nm～200nm therein, and the thickness of described negative electrode is 18nm～30nm, and the thickness of described second plate is 15nm～25nm.
In an embodiment, described the first luminescence unit comprises the first luminescent layer therein, and described the second luminescence unit comprises the second luminescent layer, and one in described the first luminescent layer and described the second luminescent layer is red light emitting layer, and another is blue light-emitting layer.
Therein in an embodiment, the material of described red light emitting layer is 4-(dintrile methyl)-2-butyl-6-(1, 1, 7, 7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans is entrained in the mixture forming in oxine aluminium, two (2-(benzo [b] thiophene-2-yl) pyridine) (acetylacetone,2,4-pentanedione) closes iridium and is entrained in 4, the mixture or the guest materials that in 4'-bis-(9-carbazole) biphenyl, form are entrained in N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1, 1'-biphenyl-4, the mixture forming in 4'-diamines, described guest materials is selected from (acetylacetone,2,4-pentanedione) and closes iridium and three (1-phenyl-isoquinolin) and close at least one in iridium, described 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl) mass ratio of-4H-pyrans and described oxine aluminium is 1:100～10:100, described two (2-(benzo [b] thiophene-2-yl) pyridine) (acetylacetone,2,4-pentanedione) closes iridium and described 4, the mass ratio of 4'-bis-(9-carbazole) biphenyl is 1:100～10:100, described guest materials and described N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4, the mass ratio of 4'-diamines is 1:100～10:100.
Therein in an embodiment, the material of described blue light-emitting layer is mixture or the fluorescent material that material of main part and phosphor material doping form, described material of main part is selected from 1, 3, 5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene and 4, at least one in 4'-bis-(9-carbazole) biphenyl, described phosphor material is selected from two (4, 6-difluorophenyl pyridine-N, C2) pyridine formyl closes iridium and two (4, 6-difluorophenyl pyridine)-tetra-(1-pyrazolyl) boric acid closes a kind of in iridium, the mass ratio of described phosphor material and described material of main part is 2:100～10:100, described fluorescent material is selected from 4, 4'-bis-(2, 2-diphenylethyllene)-1, 1'-biphenyl and 4, at least one in 4'-two [4-(di-p-tolyl is amino) styryl] biphenyl.
Above-mentioned organic electroluminescence device and preparation method thereof, couples together the first luminescence unit and the second luminescence unit by public negative electrode, double-side and structure are comparatively simple; Two luminescence units, because luminous separately separately, do not exist energy to shift and the unbalanced problem of carrier transport, thereby organic electroluminescence device are more efficient, stable.
Accompanying drawing explanation
Fig. 1 is the structural representation of the organic electroluminescence device of an execution mode;
Fig. 2 is preparation method's the flow chart of the organic electroluminescence device of an execution mode.
Embodiment
Below in conjunction with the drawings and specific embodiments, organic electroluminescence device and preparation method thereof is further illustrated.
Refer to Fig. 1, the organic electroluminescence device 100 of an execution mode comprises light-transparent substrate 10, the first anode 20, low workfunction metal layer 30, the first luminescence unit 40, negative electrode 50, the second luminescence unit 60 and the second plate 70 stacking gradually.
The material of light-transparent substrate 10 is glass.
The first anode 20 is formed at the surface of light-transparent substrate 10.The material of the first anode 20 is selected from least one in indium and tin oxide film (ITO), indium-zinc oxide (IZO), aluminium zinc oxide (AZO) and gallium zinc oxide (GZO).The thickness of the first anode 20 is 70nm～200nm.
The first luminescence unit 40 comprises the first hole injection layer 41, the first hole transmission layer 42, the first luminescent layer 43, the first electron transfer layer 44 and the first electron injecting layer 45 stacking gradually.
The first hole injection layer 41 is formed at the first anode 20 surfaces.The material of the first hole injection layer 41 is selected from least one in CuPc (CuPc), Phthalocyanine Zinc (ZnPc), ranadylic phthalocyanine (VOPc), TiOPc (TiOPc) and phthalocyanine platinum (PtPc).The thickness of the first hole injection layer 41 is 10nm～30nm.
The first hole transmission layer 42 is formed at the first hole injection layer 41 surfaces.The material of the first hole transmission layer 42 is selected from 4,4', 4''-tri-(2-naphthyl phenyl amino) triphenylamine (2-TNATA), N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), (4,4', 4''-tri-(N-3-aminomethyl phenyl-N-phenyl amino) triphenylamine (m-MTDATA), N, N'-diphenyl-N, N'-bis-(3-aminomethyl phenyl)-1,1'-biphenyl-4,4'-diamines (TPD) and 4,4', at least one in 4''-tri-(carbazole-9-yl) triphenylamine (TCTA).The thickness of the first hole transmission layer 42 is 10nm～60nm.
The first luminescent layer 43 is formed at the first hole transmission layer 42 surfaces.
The first electron transfer layer 44 is formed at the surface of the first luminescent layer 43.The material of the first electron transfer layer 44 is selected from 2-(4-xenyl)-5-(4-the tert-butyl group) phenyl-1,3,4-oxadiazole (PBD), 4,7-diphenyl-o-phenanthroline (Bphen), 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi), 2,9-dimethyl-4,7-biphenyl-1,10-phenanthrolene (BCP) and 1, at least one in 2,4-triazole derivative (TAZ).The thickness of the first electron transfer layer 44 is 20nm～60nm.
The first electron injecting layer 45 is formed at the first electron transfer layer 44 surfaces.The material of the first electron injecting layer 45 is selected from least one in cesium fluoride (CsF) and lithium fluoride (LiF).The thickness of the first electron injecting layer 45 is 0.5nm～1nm.
Negative electrode 50 is formed at the surface of the first electron injecting layer 45.The material of negative electrode 50 is selected from least one in silver (Ag), aluminium (Al), samarium (Sm) and ytterbium (Yb).The thickness of negative electrode 50 is 18nm～30nm.
The second luminescence unit 60 comprises the second electron injecting layer 61, the second electron transfer layer 62, the second luminescent layer 63, the second hole transmission layer 64 and the second hole injection layer 65 stacking gradually.
The second electron injecting layer 61 is formed at negative electrode 50 surfaces.The material of the second electron injecting layer 61 is selected from least one in cesium fluoride (CsF) and lithium fluoride (LiF).The thickness of the second electron injecting layer 61 is 0.5nm～1nm.
The second electron transfer layer 62 is formed at the second electron injecting layer 61 surfaces.The material of the second electron transfer layer 62 is selected from 2-(4-xenyl)-5-(4-the tert-butyl group) phenyl-1,3,4-oxadiazole (PBD), 4,7-diphenyl-o-phenanthroline (Bphen), 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi), 2,9-dimethyl-4,7-biphenyl-1,10-phenanthrolene (BCP) and 1, at least one in 2,4-triazole derivative (TAZ).The thickness of the second electron transfer layer 62 is 20nm～60nm.
The second luminescent layer 63 is formed at the second electron transfer layer 62 surfaces.
The second hole transmission layer 64 is formed at the surface of the second luminescent layer 63.The material of the second hole transmission layer 64 is selected from 4,4', 4''-tri-(2-naphthyl phenyl amino) triphenylamine (2-TNATA), N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), (4,4', 4''-tri-(N-3-aminomethyl phenyl-N-phenyl amino) triphenylamine (m-MTDATA), N, N'-diphenyl-N, N'-bis-(3-aminomethyl phenyl)-1,1'-biphenyl-4,4'-diamines (TPD) and 4,4', at least one in 4''-tri-(carbazole-9-yl) triphenylamine (TCTA).The thickness of the second hole transmission layer 64 is 10nm～60nm.
The second hole injection layer 65 is formed at the surface of the second hole transmission layer 64.The material of the second hole injection layer 65 is selected from least one in CuPc (CuPc), Phthalocyanine Zinc (ZnPc), ranadylic phthalocyanine (VOPc), TiOPc (TiOPc) and phthalocyanine platinum (PtPc).The thickness of the second hole injection layer 65 is 10nm～30nm.
One in the first luminescent layer 43 and the second luminescent layer 63 is blue light-emitting layer, and another is red light emitting layer.
The material of blue light-emitting layer is mixture or the fluorescent material that material of main part and phosphor material doping form.Material of main part is selected from least one in 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi) and 4,4'-bis-(9-carbazole) biphenyl (CBP).Phosphor material is selected from two (4,6-difluorophenyl pyridine-N, C2) pyridine formyls and closes iridium (FIrpic) and two (4,6-difluorophenyl pyridines)-tetra-(1-pyrazolyl) boric acid and close a kind of in iridium (FIr6).The mass ratio of phosphor material and material of main part is 2:100～10:100.Fluorescent material is selected from 4,4'-bis-(2,2-diphenylethyllene)-1, at least one in 1'-biphenyl (DPVBi) and 4,4'-two [4-(di-p-tolyl is amino) styryl] biphenyl (DPAVBi).The thickness of blue light-emitting layer is 5nm～20nm.
The material of red light emitting layer is 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB) is entrained in mixture, two (2-(benzo [b] thiophene-2-yl) pyridine forming in oxine aluminium (Alq3)) (acetylacetone,2,4-pentanedione) close iridium (Ir (btp) 2 (acac)) and be entrained in 4, the mixture or the guest materials that in 4'-bis-(9-carbazole) biphenyl (CBP), form are entrained in N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4, the mixture forming in 4'-diamines (NPB).Guest materials is selected from (acetylacetone,2,4-pentanedione) and closes iridium (Ir (MDQ) 2 (acac)) and three (1-phenyl-isoquinolin) close at least one in iridium (Ir (piq) 3).4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB) is 1:100～10:100 with the mass ratio of oxine aluminium (Alq3).Two (2-(benzo [b] thiophene-2-yl) pyridine) (acetylacetone,2,4-pentanedione) closes iridium (Ir (btp) 2 (acac)) and 4, and the mass ratio of 4'-bis-(9-carbazole) biphenyl (CBP) is 1:100～10:100.Guest materials and N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4, the mass ratio of 4'-diamines (NPB) is 1:100～10:100.The thickness of red light emitting layer is 5nm～20nm.
It should be noted that, the material of the first hole injection layer 41 and the second hole injection layer 65, the first hole transmission layer 42 and the second hole transmission layer 64, the first electron transfer layer 44 and the second electron transfer layer 62, the first electron injecting layer 45 and the second electron injecting layer 61 can be the same or different.
Second plate 70 is formed at the second hole injection layer 65 surfaces.The material of second plate 70 is selected from least one in silver (Ag), aluminium (Al) and gold (Au).The thickness of second plate 70 is 15nm～25nm.
Be appreciated that in this organic electroluminescence device 100 and also other functional layers can be set as required.
Above-mentioned organic electroluminescence device 100, couples together the first luminescence unit 40 and the second luminescence unit 60 by negative electrode 50, double-side and structure are comparatively simple; One in the first luminescence unit 40 and the second luminescence unit 60 is blue light emitting unit, and another is red light-emitting unit, and two luminescence units are launched jointly, forms white light; Two luminescence units, because luminous separately separately, do not exist energy to shift and the unbalanced problem of carrier transport, thereby organic electroluminescence device 100 are more efficient, stable; In organic electroluminescence device 100, each assembly is transparent material, therefore, cold time, presents transparent state, can also use as Transparent Parts.
Please refer to Fig. 2, the preparation method of the organic electroluminescence device 100 of an execution mode, it comprises the following steps:
Step S110, at light-transparent substrate 10 surface vacuum sputters, prepare the first anode 20, the material of the first anode 20 is selected from least one in indium and tin oxide film (ITO), indium-zinc oxide (IZO), aluminium zinc oxide (AZO) and gallium zinc oxide (GZO).
Vacuum splashing and plating is 1 * 10 at vacuum pressure
-5pa～1 * 10
-3under Pa, carry out.
The material of light-transparent substrate 10 is glass.
In present embodiment, before forming the first anode 20, light-transparent substrate 10 surfaces first light-transparent substrate 10 is carried out to pre-treatment, pre-treatment comprises: light-transparent substrate 10 is placed on and in the deionized water that contains washing agent, carries out ultrasonic cleaning, after cleaning up, use successively isopropyl alcohol, acetone is processed 20 minutes in ultrasonic wave, and then dries up with nitrogen.
Preferably, the thickness of the first anode 20 is 70nm～200nm.
Step S120, on the surface of the first anode 20, prepare the first luminescence unit 40.
The first luminescence unit 40 comprises the first hole injection layer 41, the first hole transmission layer 42, the first luminescent layer 43, the first electron transfer layer 44 and the first electron injecting layer 45 stacking gradually.The first luminescence unit 40 is prepared by evaporation.
The first hole injection layer 41 is formed at the first anode 20 surfaces.The material of the first hole injection layer 41 is selected from least one in CuPc (CuPc), Phthalocyanine Zinc (ZnPc), ranadylic phthalocyanine (VOPc), TiOPc (TiOPc) and phthalocyanine platinum (PtPc).The thickness of the first hole injection layer 41 is 10nm～30nm.Evaporation is 1 * 10 at vacuum pressure
-5pa～1 * 10
-3under Pa, carry out, evaporation speed is 0.1nm/s～1nm/s.
The first hole transmission layer 42 is formed at the first hole injection layer 41 surfaces.The material of the first hole transmission layer 42 is selected from 4,4', 4''-tri-(2-naphthyl phenyl amino) triphenylamine (2-TNATA), N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), (4,4', 4''-tri-(N-3-aminomethyl phenyl-N-phenyl amino) triphenylamine (m-MTDATA), N, N'-diphenyl-N, N'-bis-(3-aminomethyl phenyl)-1,1'-biphenyl-4,4'-diamines (TPD) and 4,4', at least one in 4''-tri-(carbazole-9-yl) triphenylamine (TCTA).The thickness of the first hole transmission layer 42 is 10nm～60nm.Evaporation is 1 * 10 at vacuum pressure
-5pa～1 * 10
-3under Pa, carry out, evaporation speed is 0.1nm/s～1nm/s.
The first luminescent layer 43 is formed at the first hole transmission layer 42 surfaces.The first luminescent layer 43 is a kind of in blue light-emitting layer and red light emitting layer.
The material of blue light-emitting layer is mixture or the fluorescent material that material of main part and phosphor material doping form.Material of main part is selected from least one in 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi) and 4,4'-bis-(9-carbazole) biphenyl (CBP).Phosphor material is selected from two (4,6-difluorophenyl pyridine-N, C2) pyridine formyls and closes iridium (FIrpic) and two (4,6-difluorophenyl pyridines)-tetra-(1-pyrazolyl) boric acid and close a kind of in iridium (FIr6).The mass ratio of phosphor material and material of main part is 2:10～10:100.Fluorescent material is selected from 4,4'-bis-(2,2-diphenylethyllene)-1, at least one in 1'-biphenyl (DPVBi) and 4,4'-two [4-(di-p-tolyl is amino) styryl] biphenyl (DPAVBi).The thickness of blue light-emitting layer is 5nm～20nm.Evaporation is 1 * 10 at vacuum pressure
-5pa～1 * 10
-3under Pa, carry out, evaporation speed is 0.01nm/s～1nm/s.
The material of red light emitting layer is 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB) is entrained in mixture, two (2-(benzo [b] thiophene-2-yl) pyridine forming in oxine aluminium (Alq3)) (acetylacetone,2,4-pentanedione) close iridium (Ir (btp) 2 (acac)) and be entrained in 4, the mixture or the guest materials that in 4'-bis-(9-carbazole) biphenyl (CBP), form are entrained in N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4, the mixture forming in 4'-diamines (NPB).Guest materials is selected from (acetylacetone,2,4-pentanedione) and closes iridium (Ir (MDQ) 2 (acac)) and three (1-phenyl-isoquinolin) close at least one in iridium (Ir (piq) 3).4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB) is 1:100～10:100 with the mass ratio of oxine aluminium (Alq3).Two (2-(benzo [b] thiophene-2-yl) pyridine) (acetylacetone,2,4-pentanedione) closes iridium (Ir (btp) 2 (acac)) and 4, and the mass ratio of 4'-bis-(9-carbazole) biphenyl (CBP) is 1:100～10:100.Guest materials and N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4, the mass ratio of 4'-diamines (NPB) is 1:100～10:100.The thickness of red light emitting layer is 5nm～20nm.Evaporation is 1 * 10 at vacuum pressure
-5pa～1 * 10
-3under Pa, carry out, evaporation speed is 0.01nm/s～1nm/s.
The first electron transfer layer 44 is formed at the surface of the first luminescent layer 43.The material of the first electron transfer layer 44 is selected from 2-(4-xenyl)-5-(4-the tert-butyl group) phenyl-1,3,4-oxadiazole (PBD), 4,7-diphenyl-o-phenanthroline (Bphen), 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi), 2,9-dimethyl-4,7-biphenyl-1,10-phenanthrolene (BCP) and 1, at least one in 2,4-triazole derivative (TAZ).The thickness of the first electron transfer layer 44 is 20nm～60nm.Evaporation is 1 * 10 at vacuum pressure
-5pa～1 * 10
-3under Pa, carry out, evaporation speed is 0.1nm/s～1nm/s.
The first electron injecting layer 45 is formed at the first electron transfer layer 44 surfaces.The material of the first electron injecting layer 45 is selected from least one in cesium fluoride (CsF) and lithium fluoride (LiF).The thickness of the first electron injecting layer 45 is 0.5nm～1nm.Evaporation is 1 * 10 at vacuum pressure
-5pa～1 * 10
-3under Pa, carry out, evaporation speed is 0.1nm/s～1nm/s.
Step S130, at the surperficial evaporation of the first electron injecting layer 45, prepare negative electrode 50.
Negative electrode 50 is formed at the surface of the first electron injecting layer 45.The material of negative electrode 50 is selected from least one in silver (Ag), aluminium (Al), samarium (Sm) and ytterbium (Yb).The thickness of negative electrode 50 is 18nm～30nm.Evaporation is 1 * 10 at vacuum pressure
-5pa～1 * 10
-3under Pa, carry out, evaporation speed is 0.1nm/s～1nm/s.
Step S140, on the surface of negative electrode 50, prepare the second luminescence unit 60.
The second luminescence unit 60 comprises the second electron injecting layer 61, the second electron transfer layer 62, the second luminescent layer 63, the second hole transmission layer 64 and the second hole injection layer 65 stacking gradually.The second luminescence unit 60 is prepared by evaporation.
The second electron injecting layer 61 is formed at the surface of negative electrode 50.The material of the second electron injecting layer 61 is selected from least one in cesium fluoride (CsF) and lithium fluoride (LiF).The thickness of the second electron injecting layer 61 is 0.5nm～1nm.Evaporation is 1 * 10 at vacuum pressure
-5pa～1 * 10
-3under Pa, carry out, evaporation speed is 0.1nm/s～1nm/s.
The second electron transfer layer 62 is formed at the second electron injecting layer 61 surfaces.The material of the second electron transfer layer 62 is selected from 2-(4-xenyl)-5-(4-the tert-butyl group) phenyl-1,3,4-oxadiazole (PBD), 4,7-diphenyl-o-phenanthroline (Bphen), 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi), 2,9-dimethyl-4,7-biphenyl-1,10-phenanthrolene (BCP) and 1, at least one in 2,4-triazole derivative (TAZ).The thickness of the second electron transfer layer 62 is 20nm～60nm.Evaporation is 1 * 10 at vacuum pressure
-5pa～1 * 10
-3under Pa, carry out, evaporation speed is 0.1nm/s～1nm/s.
The second luminescent layer 63 is formed at the second electron transfer layer 62 surfaces.One in the first luminescent layer 43 and the second luminescent layer 63 is blue light-emitting layer, and another is red light emitting layer.
The second hole transmission layer 64 is formed at the surface of the second luminescent layer 63.The material of the second hole transmission layer 64 is selected from 4,4', 4''-tri-(2-naphthyl phenyl amino) triphenylamine (2-TNATA), N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), (4,4', 4''-tri-(N-3-aminomethyl phenyl-N-phenyl amino) triphenylamine (m-MTDATA), N, N'-diphenyl-N, N'-bis-(3-aminomethyl phenyl)-1,1'-biphenyl-4,4'-diamines (TPD) and 4,4', at least one in 4''-tri-(carbazole-9-yl) triphenylamine (TCTA).The thickness of the second hole transmission layer 64 is 10nm～60nm.Evaporation is 1 * 10 at vacuum pressure
-5pa～1 * 10
-3under Pa, carry out, evaporation speed is 0.1nm/s～1nm/s.
The second hole injection layer 65 is formed at the surface of the second hole transmission layer 64.The material of the second hole injection layer 65 is selected from least one in CuPc (CuPc), Phthalocyanine Zinc (ZnPc), ranadylic phthalocyanine (VOPc), TiOPc (TiOPc) and phthalocyanine platinum (PtPc).The thickness of the second hole injection layer 65 is 10nm～30nm.Evaporation is 1 * 10 at vacuum pressure
-5pa～1 * 10
-3under Pa, carry out, evaporation speed is 0.1nm/s～1nm/s.
Step S150, at the surperficial evaporation of the second hole injection layer 65, prepare second plate 70.
Second plate 70 is formed at the second hole injection layer 65 surfaces.The material of second plate 70 is selected from least one in silver (Ag), aluminium (Al) and gold (Au).The thickness of second plate 70 is 15nm～25nm.Evaporation is 1 * 10 at vacuum pressure
-5pa～1 * 10
-3under Pa, carry out, evaporation speed is 0.1nm/s～1nm/s.
Above-mentioned organic electroluminescence device preparation method, technique is simple.
Below in conjunction with specific embodiment, the preparation method of organic electroluminescence device provided by the invention is elaborated.
The preparation used of the embodiment of the present invention and comparative example and tester are: test is high vacuum coating system (scientific instrument development center, Shenyang Co., Ltd) with Preparation equipment, the USB4000 fiber spectrometer testing electroluminescent spectrum of U.S. marine optics Ocean Optics, the Keithley2400 test electric property of U.S. Keithley company, CS-100A colorimeter test brightness and the colourity of Japanese Konica Minolta company.
Embodiment 1
Structure prepared by the present embodiment is glass substrate/ITO/CuPc/NPB/DCJTB:Alq
3the organic electroluminescence device of/Bphen/LiF/Al/LiF/Bphen/FIrpic:TPBi/NPB/CuPc/Ag.
The manufacture method of this Organnic electroluminescent device, comprises following step:
Step 1, provide light-transparent substrate, light-transparent substrate is placed in the deionized water that contains washing agent and carries out ultrasonic cleaning, use successively isopropyl alcohol after cleaning up, acetone is processed 20 minutes in ultrasonic wave, and then dries up with nitrogen.
Step 2, in vacuum degree, be 5 * 10
-4in the vacuum coating system of Pa, at light-transparent substrate surface sputtering, prepare the first anode, material is that ITO thickness is 100nm;
Step 3, in vacuum degree, be 5 * 10
-4in the vacuum coating system of Pa, on first anode surface, by thermal evaporation techniques, prepare the first organic light-emitting units.The first organic light-emitting units comprises the first hole injection layer, the first hole transmission layer, the first luminescent layer, the first electron transfer layer and the first electron injecting layer stacking gradually.The material of the first hole injection layer is CuPc, and thickness is 10nm, and evaporation speed is 0.1nm/s; The first hole transport layer material is NPB, and thickness is 30nm, and evaporation speed is 0.1nm/s; The material of the first luminescent layer comprises Alq
3and Alq in doping
3dCJTB, DCJTB and Alq
3mass ratio be 1:100, thickness is 10nm, the evaporation speed of DCJTB is 0.01nm/s, Alq
3evaporation speed be 1nm/s; The material of the first electron transfer layer is Bphen, and thickness is 20nm, and evaporation speed is .01nm/s; The material of the first electron injecting layer is LiF, and thickness is 0.5nm, and evaporation speed is 0.1nm/s.
Step 4, in vacuum degree, be 5 * 10
-4in the vacuum coating system of Pa, by thermal evaporation technique, continue to prepare negative electrode, the material of negative electrode is Al, and thickness is 18nm, and evaporation speed is 0.1nm/s.
Step 5, in vacuum degree, be 5 * 10
-4in the vacuum coating system of Pa, at cathode surface, continue preparation the second organic light-emitting units.The second luminescence unit comprises the second electron injecting layer, the second electron transfer layer, the second luminescent layer, the second hole transmission layer and the second hole injection layer stacking gradually.The material of the second electron injecting layer is LiF, and thickness is 0.5nm, and evaporation speed is 0.1nm/s; The material of the second electron transfer layer is Bphen, and thickness is 30nm, and evaporation speed is 0.1nm/s; The material of the second luminescent layer comprises TPBi and is entrained in the FIrpic in TPBi, and the mass ratio of FIrpic and TPBi is 1:10, and thickness is 20nm, and the evaporation speed of TPBi is 1nm/s, and the evaporation speed of FIrpic is 0.1nm/s; The material of the second hole transmission layer is NPB, and thickness is 30nm, and evaporation speed is 0.1nm/s; The material of the second hole injection layer is CuPc, and thickness is 80nm, and evaporation speed is 0.1nm/s.
Step 6, in vacuum degree, be 5 * 10
-4in the vacuum coating system of Pa, on the second organic light-emitting units surface, prepare second plate, material is Ag, and thickness is 15nm, and evaporation speed is 0.1nm/s.
Embodiment 2
Structure prepared by the present embodiment is glass substrate/AZO/ZnPc/2-TNATA/DPVBi/BCP/LiF/Ag/CsF/TPBi/Ir (piq)
3: the organic electroluminescence device of CBP/NPB/VOPc/Al.
The manufacture method of this Organnic electroluminescent device, comprises following step:
Step 1, provide light-transparent substrate, light-transparent substrate is placed in the deionized water that contains washing agent and carries out ultrasonic cleaning, use successively isopropyl alcohol after cleaning up, acetone is processed 20 minutes in ultrasonic wave, and then dries up with nitrogen.
Step 2, in vacuum degree, be 1 * 10
-4in the vacuum coating system of Pa, at light-transparent substrate surface sputtering, prepare the first anode, material is that AZO thickness is 70nm;
Step 3, in vacuum degree, be 1 * 10
-4in the vacuum coating system of Pa, on first anode surface, by thermal evaporation techniques, prepare the first organic light-emitting units.The first organic light-emitting units comprises the first hole injection layer, the first hole transmission layer, the first luminescent layer, the first electron transfer layer and the first electron injecting layer stacking gradually.The material of the first hole injection layer is ZnPc, and thickness is 10nm, and evaporation speed is 0.2nm/s; The first hole transport layer material is 2-TNATA, and thickness is 60nm, and evaporation speed is 0.2nm/s; The material of the first luminescent layer is DPVBi, and thickness is 10nm, and evaporation speed is 0.2nm/s; The material of the first electron transfer layer is BCP, and thickness is 60nm, and evaporation speed is 0.2nm/s; The material of the first electron injecting layer is LiF, and thickness is 0.5nm, and evaporation speed is 0.2nm/s.
Step 4, in vacuum degree, be 1 * 10
-4in the vacuum coating system of Pa, by thermal evaporation technique, continue to prepare negative electrode, the material of negative electrode 50 is Ag, and thickness is 20nm, and evaporation speed is 0.2nm/s;
Step 5, in vacuum degree, be 1 * 10
-4in the vacuum coating system of Pa, at cathode surface, continue preparation the second organic light-emitting units.The second luminescence unit comprises the second electron injecting layer, the second electron transfer layer, the second luminescent layer, the second hole transmission layer and the second hole injection layer stacking gradually.The material of the second electron injecting layer is CsF, and thickness is 1nm, and evaporation speed is 1nm/s; The material of the second electron transfer layer is TPBi, and thickness is 60nm, and evaporation speed is 0.2nm/s; The material of the second luminescent layer comprises CBP and is entrained in the Ir (piq) in CBP
3, Ir (piq)
3with the mass ratio of CBP be 8:100, thickness is 12nm, the evaporation speed of CBP is 1nm/s, Ir (piq)
3evaporation speed be 0.08nm/s; The material of the second hole transmission layer is NPB, and thickness is 40nm, and evaporation speed is 0.2nm/s; The material of the second hole injection layer is VOPc, and thickness is 10nm, and evaporation speed is 0.2nm/s.
Step 6, in vacuum degree, be 1 * 10
-4in the vacuum coating system of Pa, on the second organic light-emitting units surface, prepare second plate, material is Al, and thickness is 20nm.
Embodiment 3
Structure prepared by the present embodiment is the organic electroluminescence device of glass substrate/GZO/TiOPc/m-MTDATA/FIr6:CBP/TAZ/LiF/Sm/LiF/BPhen/Ir (btp) 2 (acac): CBP/m-MTDATA/PtPc/Au.
The manufacture method of this Organnic electroluminescent device, comprises following step:
Step 1, provide light-transparent substrate, light-transparent substrate is placed in the deionized water that contains washing agent and carries out ultrasonic cleaning, use successively isopropyl alcohol after cleaning up, acetone is processed 20 minutes in ultrasonic wave, and then dries up with nitrogen.
Step 2, in vacuum degree, be 1 * 10
-3in the vacuum coating system of Pa, at light-transparent substrate surface sputtering, prepare the first anode, material is GZO, and thickness is 200nm;
Step 3, in vacuum degree, be 1 * 10
-3in the vacuum coating system of Pa, on first anode surface, by thermal evaporation techniques, prepare the first organic light-emitting units.The first organic light-emitting units comprises the first hole injection layer, the first hole transmission layer, the first luminescent layer, the first electron transfer layer and the first electron injecting layer stacking gradually.The material of the first hole injection layer is TiOPc, and thickness is 30nm, and evaporation speed is 1nm/s; The first hole transport layer material is m-MTDATA, and thickness is 30nm, and evaporation speed is 1nm/s; The material of the first luminescent layer comprises the FIr6 of CBP in CBP and doping, and the mass ratio of FIr6 and CBP is 2:100, and thickness is 5nm, and the evaporation speed of FIr6 is 0.02nm/s, and the evaporation speed of CBP is 1nm/s; The material of the first electron transfer layer is TAZ, and thickness is 30nm, and evaporation speed is 1nm/s; The material of the first electron injecting layer is LiF, and thickness is 1nm, and evaporation speed is 1nm/s.
Step 4, in vacuum degree, be 1 * 10
-3in the vacuum coating system of Pa, by thermal evaporation technique, continue to prepare negative electrode, the material of negative electrode 50 is Sm, and thickness is 35nm, and evaporation speed is 1nm/s;
Step 5, in vacuum degree, be 1 * 10
-3in the vacuum coating system of Pa, at cathode surface, continue preparation the second organic light-emitting units.The second luminescence unit comprises the second electron injecting layer, the second electron transfer layer, the second luminescent layer, the second hole transmission layer and the second hole injection layer stacking gradually.The material of the second electron injecting layer is LiF, and thickness is 1nm, and evaporation speed is 1nm/s; The material of the second electron transfer layer is Bphen, and thickness is 30nm, and evaporation speed is 1nm/s; The material of the second luminescent layer comprises CBP and is entrained in the Ir (btp) 2 (acac) in CBP, Ir (btp) 2 (acac) is 1:10 with the mass ratio of CBP, thickness is 5nm, the evaporation speed of CBP is 1nm/s, and the evaporation speed of Ir (btp) 2 (acac) is 0.1nm/s; The material of the second hole transmission layer is m-MTDATA, and thickness is 30nm, and evaporation speed is 1nm/s; The material of the second hole injection layer is PtPc, and thickness is 30nm, and evaporation speed is 1nm/s.
Step 6, in vacuum degree, be 1 * 10
-3in the vacuum coating system of Pa, on the second organic light-emitting units surface, prepare second plate, material is Au, and thickness is 25nm, and evaporation speed is 1nm/s.
Embodiment 4
Structure prepared by the present embodiment is the organic electroluminescence device of glass substrate/IZO/ZnPc/m-MTDATA/Ir (MDQ) 2 (acac): NPB/BCP/LiF/Yb/LiF/Bphen/DPAVBi/NPB/CuPc/Au.
The manufacture method of this Organnic electroluminescent device, comprises following step:
Step 1, provide light-transparent substrate, light-transparent substrate is placed in the deionized water that contains washing agent and carries out ultrasonic cleaning, use successively isopropyl alcohol after cleaning up, acetone is processed 20 minutes in ultrasonic wave, and then dries up with nitrogen.
Step 2, in vacuum degree, be 1 * 10
-4in the vacuum coating system of Pa, at light-transparent substrate surface sputtering, prepare the first anode, material is IZO, and thickness is 100nm;
Step 3, in vacuum degree, be 1 * 10
-3in the vacuum coating system of Pa, on first anode surface, by thermal evaporation techniques, prepare the first organic light-emitting units.The first organic light-emitting units comprises the first hole injection layer, the first hole transmission layer, the first luminescent layer, the first electron transfer layer and the first electron injecting layer stacking gradually.The material of the first hole injection layer is ZnPc, and thickness is 20nm, and evaporation speed is 0.5nm/s; The first hole transport layer material is m-MTDATA, and thickness is 40nm, and evaporation speed is 0.5nm/s; The material of the first luminescent layer comprises the Ir (MDQ) 2 (acac) of NPB in NPB and doping, Ir (MDQ) 2 (acac) is 8:100 with the mass ratio of NPB, thickness is 20nm, the evaporation speed of Ir (MDQ) 2 (acac) is 0.08nm/s, and the evaporation speed of NPB is 1nm/s; The material of the first electron transfer layer is BCP, and thickness is 40nm, and evaporation speed is 0.5nm/s; The material of the first electron injecting layer is LiF, and thickness is 1nm, and evaporation speed is 0.5nm/s.
Step 4, in vacuum degree, be 1 * 10
-3in the vacuum coating system of Pa, by thermal evaporation technique, continue to prepare negative electrode, the material of negative electrode 50 is Yb, and thickness is 30nm, and evaporation speed is 0.5nm/s;
Step 5, in vacuum degree, be 1 * 10
-3in the vacuum coating system of Pa, at cathode surface, continue preparation the second organic light-emitting units.The second luminescence unit comprises the second electron injecting layer, the second electron transfer layer, the second luminescent layer, the second hole transmission layer and the second hole injection layer stacking gradually.The material of the second electron injecting layer is LiF, and thickness is 1nm, and evaporation speed is 0.5nm/s; The material of the second electron transfer layer is Bphen, and thickness is 40nm, and evaporation speed is 0.5nm/s; The material of the second luminescent layer is DPAVBi, and thickness is 15nm, and evaporation speed is 0.5nm/s; The material of the second hole transmission layer is NPB, and thickness is 20nm, and evaporation speed is 0.5nm/s; The material of the second hole injection layer is CuPc, and thickness is 60nm, and evaporation speed is 0.5nm/s.
Step 6, in vacuum degree, be 1 * 10
-3in the vacuum coating system of Pa, on the second organic light-emitting units surface, prepare second plate, material is Au, and thickness is 20nm, and evaporation speed is 0.5nm/s.
Table 1
Refer to table 1, table 1 is embodiment 1,2, the luminescent properties data of 3,4 organic electroluminescence devices of making, and the data in table are the glass substrate light directions at organic electroluminescence device, test luminosity is 1000cd/m
2situation under obtain, wherein the driving voltage of organic electroluminescence device is 7.5V, as can be seen from Table 1, the organic electroluminescence device that method provided by the invention is made has higher luminous efficiency, in addition, and because the present invention is by red, blue two luminescent layers are separately arranged, make redly, each self-luminous of blue luminescent layer is not subject to that energy shifts and the unbalanced impact of carrier transport, so luminous efficiency also can be improved.And
The above embodiment has only expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (10)
1. an organic electroluminescence device, it is characterized in that, comprise the light-transparent substrate, the first anode, the first luminescence unit, negative electrode, the second luminescence unit and the second plate that stack gradually, the material of the described first anode is selected from least one in indium tin oxide, indium-zinc oxide, aluminium zinc oxide and gallium zinc oxide, the material of described negative electrode is selected from least one in silver, aluminium, samarium and ytterbium, and the material of described second plate is selected from least one in silver, aluminium and gold.
2. organic electroluminescence device according to claim 1, is characterized in that, the thickness of the described first anode is 70nm～200nm, and the thickness of described negative electrode is 18nm～30nm, and the thickness of described second plate is 15nm～25nm.
3. organic electroluminescence device according to claim 1, it is characterized in that, described the first luminescence unit comprises the first luminescent layer, described the second luminescence unit comprises the second luminescent layer, one in described the first luminescent layer and described the second luminescent layer is red light emitting layer, and another is blue light-emitting layer.
4. organic electroluminescence device according to claim 3, it is characterized in that, the material of described red light emitting layer is 4-(dintrile methyl)-2-butyl-6-(1, 1, 7, 7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans is entrained in the mixture forming in oxine aluminium, two (2-(benzo [b] thiophene-2-yl) pyridine) (acetylacetone,2,4-pentanedione) closes iridium and is entrained in 4, the mixture or the guest materials that in 4'-bis-(9-carbazole) biphenyl, form are entrained in N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1, 1'-biphenyl-4, the mixture forming in 4'-diamines, described guest materials is selected from (acetylacetone,2,4-pentanedione) and closes iridium and three (1-phenyl-isoquinolin) and close at least one in iridium, described 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl) mass ratio of-4H-pyrans and described oxine aluminium is 1:100～10:100, described two (2-(benzo [b] thiophene-2-yl) pyridine) (acetylacetone,2,4-pentanedione) closes iridium and described 4, the mass ratio of 4'-bis-(9-carbazole) biphenyl is 1:100～10:100, described guest materials and described N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4, the mass ratio of 4'-diamines is 1:100～10:100.
5. organic electroluminescence device according to claim 3, it is characterized in that, the material of described blue light-emitting layer is mixture or the fluorescent material that material of main part and phosphor material doping form, described material of main part is selected from 1, 3, 5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene and 4, at least one in 4'-bis-(9-carbazole) biphenyl, described phosphor material is selected from two (4, 6-difluorophenyl pyridine-N, C2) pyridine formyl closes iridium and two (4, 6-difluorophenyl pyridine)-tetra-(1-pyrazolyl) boric acid closes a kind of in iridium, the mass ratio of described phosphor material and described material of main part is 2:100～10:100, described fluorescent material is selected from 4, 4'-bis-(2, 2-diphenylethyllene)-1, 1'-biphenyl and 4, at least one in 4'-two [4-(di-p-tolyl is amino) styryl] biphenyl.
6. a preparation method for organic electroluminescence device, is characterized in that, comprises the following steps:
At light-transparent substrate surface vacuum sputter, prepare the first anode, the material of the described first anode is selected from least one in indium tin oxide, indium-zinc oxide, aluminium zinc oxide and gallium zinc oxide;
On the surface of the described first anode, prepare the first luminescence unit;
Surperficial evaporation at described the first luminescence unit is prepared negative electrode, and the material of described negative electrode is selected from least one in silver, aluminium, samarium and ytterbium;
On the surface of described negative electrode, prepare the second luminescence unit; And
Surperficial evaporation at described the second luminescence unit is prepared second plate, and the material of described second plate is selected from least one in silver, aluminium and gold.
7. the preparation method of organic electroluminescence device according to claim 6, is characterized in that: the thickness of the described first anode is 70nm～200nm, and the thickness of described negative electrode is 18nm～30nm, and the thickness of described second plate is 15nm～25nm.
8. the preparation method of organic electroluminescence device according to claim 6, it is characterized in that: described the first luminescence unit comprises the first luminescent layer, described the second luminescence unit comprises the second luminescent layer, one in described the first luminescent layer and described the second luminescent layer is red light emitting layer, and another is blue light-emitting layer.
9. the preparation method of organic electroluminescence device according to claim 8, it is characterized in that: the material of described red light emitting layer is 4-(dintrile methyl)-2-butyl-6-(1, 1, 7, 7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans is entrained in the mixture forming in oxine aluminium, two (2-(benzo [b] thiophene-2-yl) pyridine) (acetylacetone,2,4-pentanedione) closes iridium and is entrained in 4, the mixture or the guest materials that in 4'-bis-(9-carbazole) biphenyl, form are entrained in N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1, 1'-biphenyl-4, the mixture forming in 4'-diamines, described guest materials is selected from (acetylacetone,2,4-pentanedione) and closes iridium and three (1-phenyl-isoquinolin) and close at least one in iridium, described 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl) mass ratio of-4H-pyrans and described oxine aluminium is 1:100～10:100, described two (2-(benzo [b] thiophene-2-yl) pyridine) (acetylacetone,2,4-pentanedione) closes iridium and described 4, the mass ratio of 4'-bis-(9-carbazole) biphenyl is 1:100～10:100, described guest materials and described N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4, the mass ratio of 4'-diamines is 1:100～10:100.
10. the preparation method of organic electroluminescence device according to claim 8, it is characterized in that: the material of described blue light-emitting layer is mixture or the fluorescent material that material of main part and phosphor material doping form, described material of main part is selected from 1, 3, 5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene and 4, at least one in 4'-bis-(9-carbazole) biphenyl, described phosphor material is selected from two (4, 6-difluorophenyl pyridine-N, C2) pyridine formyl closes iridium and two (4, 6-difluorophenyl pyridine)-tetra-(1-pyrazolyl) boric acid closes a kind of in iridium, the mass ratio of described phosphor material and described material of main part is 2:100～10:100, described fluorescent material is selected from 4, 4'-bis-(2, 2-diphenylethyllene)-1, 1'-biphenyl and 4, at least one in 4'-two [4-(di-p-tolyl is amino) styryl] biphenyl.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310157847.6A CN104124389A (en) | 2013-04-28 | 2013-04-28 | Organic light-emitting device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310157847.6A CN104124389A (en) | 2013-04-28 | 2013-04-28 | Organic light-emitting device and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104124389A true CN104124389A (en) | 2014-10-29 |
Family
ID=51769730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310157847.6A Pending CN104124389A (en) | 2013-04-28 | 2013-04-28 | Organic light-emitting device and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104124389A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106129099A (en) * | 2016-08-31 | 2016-11-16 | 深圳市华星光电技术有限公司 | A kind of Organic Light Emitting Diode illumination panel of double-side |
| CN113937232A (en) * | 2021-09-26 | 2022-01-14 | 五邑大学 | Quantum dot light-emitting diode and preparation method and application thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1670981A (en) * | 2004-04-21 | 2005-09-21 | 友达光电股份有限公司 | OLED and display panel and communication device comprising the same |
| US20060035015A1 (en) * | 2004-08-10 | 2006-02-16 | Eastman Kodak Company | Making a cathode structure for OLEDS |
| US20090218934A1 (en) * | 2008-03-03 | 2009-09-03 | Samsung Sdi Co., Ltd. | Organic light-emitting device |
-
2013
- 2013-04-28 CN CN201310157847.6A patent/CN104124389A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1670981A (en) * | 2004-04-21 | 2005-09-21 | 友达光电股份有限公司 | OLED and display panel and communication device comprising the same |
| US20060035015A1 (en) * | 2004-08-10 | 2006-02-16 | Eastman Kodak Company | Making a cathode structure for OLEDS |
| US20090218934A1 (en) * | 2008-03-03 | 2009-09-03 | Samsung Sdi Co., Ltd. | Organic light-emitting device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106129099A (en) * | 2016-08-31 | 2016-11-16 | 深圳市华星光电技术有限公司 | A kind of Organic Light Emitting Diode illumination panel of double-side |
| US10541276B2 (en) | 2016-08-31 | 2020-01-21 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Double-sided organic light-emitting diode lighting panel |
| CN106129099B (en) * | 2016-08-31 | 2020-02-07 | 深圳市华星光电技术有限公司 | Organic light emitting diode lighting panel with double-sided light emitting |
| CN113937232A (en) * | 2021-09-26 | 2022-01-14 | 五邑大学 | Quantum dot light-emitting diode and preparation method and application thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103730589A (en) | Top emission organic light-emitting device and manufacturing method thereof | |
| CN104934544A (en) | Organic electroluminescent light emitting device and preparation method thereof | |
| CN102931357A (en) | Hemispherical shell organic electroluminescence device with two luminescent layers and preparation method for device | |
| CN102842682A (en) | Stacked organic electroluminescence device and manufacturing method thereof | |
| CN104064677A (en) | Organic electroluminescent device and preparation method thereof | |
| CN104638115A (en) | Organic light-emitting device and preparation method thereof | |
| CN104183746A (en) | White light organic light emitting device and manufacturing method thereof | |
| CN104124389A (en) | Organic light-emitting device and preparation method thereof | |
| CN104124384A (en) | Organic electroluminescent device and preparation method thereof | |
| CN104218156A (en) | Organic light emission diode device and preparation method thereof | |
| CN104183718A (en) | Organic light emission diode and preparation method thereof | |
| CN104183589A (en) | White organic light emitting device and manufacturing method thereof | |
| CN104183713A (en) | Top-emission organic light emission diode and preparation method thereof | |
| CN104638125A (en) | Organic light-emitting device and preparation method thereof | |
| CN104638164A (en) | Organic light-emitting device and preparation method thereof | |
| CN104064680A (en) | Organic electroluminescent device and preparation method thereof | |
| CN103972408A (en) | Organic light-emitting device and method for manufacturing same | |
| CN104183736A (en) | Organic light emitting device and manufacturing method thereof | |
| CN104518108A (en) | Organic electroluminescent device and method for preparing same | |
| CN103972421A (en) | Organic light-emitting device and production method thereof | |
| CN104183761A (en) | Inverted organic light emission diode and preparation method thereof | |
| CN103682137A (en) | Organic electroluminescent device and preparation method thereof | |
| CN104183792A (en) | Organic light emitting device and manufacturing method thereof | |
| CN103972417A (en) | Organic light-emitting device and production method thereof | |
| CN104183769A (en) | Organic light emitting diode and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20141029 |