CN104112662A - VPE (Vapor Phase Epitaxy) online cleaning device and method - Google Patents
VPE (Vapor Phase Epitaxy) online cleaning device and method Download PDFInfo
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- CN104112662A CN104112662A CN201410360667.2A CN201410360667A CN104112662A CN 104112662 A CN104112662 A CN 104112662A CN 201410360667 A CN201410360667 A CN 201410360667A CN 104112662 A CN104112662 A CN 104112662A
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- cleaning device
- phase epitaxy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a VPE (Vapor Phase Epitaxy) online cleaning device. The VPE online cleaning device comprises a reaction chamber, a reaction gas inlet, a cleaning gas inlet, a gas outlet, a substrate, a substrate support and a rotating device and also comprises an online cleaning device body which is used for removing polluting parasitic nitrides remaining on the inner wall of the reaction chamber and the parts. According to the VPE online cleaning device and method, the problem of the parasitic reaction of the VPE nitride growing is serious and accordingly the additional cleaning device is added, the supply of the etching gas such as hydrogen chloride or chlorine is added into VPE equipment mainly, a method for cleaning parasitic nitride films such as gallium nitride films through the etching gas is developed, the cleaning of parasitic products formed at positions such as the pipe wall and the gas inlet and outlet inside the VPE equipment due to the parasitic reaction is achieved, the stability, the repeatability and the long-term use of the equipment are ensured, and accordingly the maintenance cost is reduced and the production efficiency is improved.
Description
Technical field
The invention belongs to technical field of semiconductors, particularly a kind of vapour phase epitaxy on-line cleaning device and method.
Background technology
The spectrum of nitride polynary system material is from 0.6ev to 6.2ev, can be luminous for interband, color covers from infrared to ultraviolet wavelength, not only aspect optoelectronic applications, as blue light, green glow, ultraviolet light-emitting diodes (LEDs), short wavelength laser diode (LDs), the aspects such as ultraviolet detector, Bragg reflection waveguide have obtained important application and development, and aspect microelectronic applications, also obtained paying close attention to widely, can make high temperature, high frequency and high power device, as High Electron Mobility Transistor (HEMTs), heterojunction bipolar transistor (HBTs) etc.Wherein gallium nitride (GaN) material, as third generation semi-conducting material, has direct band gap, broad stopband, high saturated electron drift velocity, high breakdown electric field and high heat conductance, and the excellent performances such as physical and chemical stability become most important nitride material.Especially in the last few years light-emitting diode (LEDs) illumination fast development, nitride based LEDs is widely used in display, illumination, indicator light, billboard, traffic lights etc., in agricultural, light compositing light source is accelerated in conduct, the instrument of conduct diagnosis and treatment in medical treatment.
The method kind of preparing nitride semiconductor epitaxial material is a lot, and wherein vapour phase epitaxy (VPE) method comprises that organometallic chemistry vapour deposition process (MOVPE) and hydride gas-phase epitaxy (HVPE) etc. are the Main Means that current industrial circle is prepared compound epitaxial material and thick film nitride.VPE method as molecular beam epitaxy (MBE), liquid phase epitaxy (LPE), pulsed laser deposition (PLD) etc. have the advantage that growth efficiency is higher, control precision is better, cost is relatively low, is the method generally adopting in current industry with respect to additive method.But still there is the weakness of some in current VPE equipment aspect growing nitride, for example nitride is to react when high temperature and gaseous state, easily at reaction chamber, produce parasitic reaction, pollute reaction chamber, initial condition while making next time to react changes, and easily produces the unstable of growth and do not repeat after accumulation; The contamination of simultaneous reactions chamber often needs to remove the processing of carrying out machinery or chemistry, and nitride chemical inertness is large, and mechanical strength is high, causes processing difficulty relatively, has a strong impact on production efficiency simultaneously.The present invention is based on existing experimental work, for the problems referred to above, propose a solution, being particularly useful for VPE increases repetition stability and improves the rate of capacity utilization, and the VPE equipment that is applicable to very much often using is used.
Summary of the invention
In order to solve the above-mentioned problems in the prior art, the present invention proposes a kind of vapour phase epitaxy on-line cleaning device and method, to solve in growth because parasitic reaction exists nitride material growth repeatability, stability and the long-term reliability problems causing.This device can help to realize and highly repeat nitride growth and easier equipment later maintenance, improves equipment efficiency of usage, improves the quality of products, thereby has reduced production cost.
According to an aspect of the present invention, propose a kind of vapour phase epitaxy on-line cleaning device, comprising: reaction chamber, reaction gas inlet, purge gas entrance, exhaust outlet, substrate, substrate bracket, whirligig, it is characterized in that, also comprise a kind of on-line cleaning device, in order to remove, remain in the parasitic nitride polluting on reaction chamber inwall and each parts.
According to a further aspect in the invention, proposed a kind of vapour phase epitaxy on-line cleaning method, having comprised: vapour phase epitaxy is prepared semiconductor epitaxial material on substrate; To reaction chamber, pass into etching gas, in order to etching, remove and remain in the parasitic nitride polluting on reaction chamber inwall and each parts.
The present invention is directed to VPE growing nitride and have stronger parasitic reaction problem, add extra cleaning device, mainly refer to increase the etching gas supplies such as HCl or chlorine in VPE equipment, develop the method for the nitride films such as the parasitic GaN of etching purge of gas, realize VPE device interior because parasitic reaction is located the cleaning of spurious product at tube wall, air inlet/outlet etc., the stability of assurance equipment, repeatability and long-term usability, thus maintenance cost reduced, enhance productivity.
Accompanying drawing explanation
Fig. 1 is the structure chart of vapour phase epitaxy on-line cleaning device of the present invention;
Fig. 2 is not used etchant gas to clean the Quartz stove tube picture of nitride;
Fig. 3 utilizes apparatus and method of the present invention to use etchant gas to clean the Quartz stove tube picture of nitride.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
The vapour phase epitaxy on-line cleaning device and method proposing according to the present invention, its basic principle is in VPE equipment, to add extra etching gas piping, thereby realizes the method for the parasitic nitride of erosion removal on tube wall, quartz piece, stainless steel part and substrate bracket.
Fig. 1 is the structure chart of vapour phase epitaxy on-line cleaning device of the present invention, and this device comprises reaction chamber 1 as shown in Figure 1, reaction air inlet 2, purge gas air inlet 3, exhaust outlet 4, substrate 5, substrate bracket 6, whirligig 7.
After having grown needed epitaxial structure at reaction chamber 1, by purge gas air inlet 3, pass into the etching gases such as nitridation or chlorine, at substrate bracket 6, have at suitable temperature, pass into certain density this gas, through certain reaction time, can reach the effect that comprises the nitride spurious product on reaction chamber 1, substrate bracket 5 and exhaust outlet 4 etc. of removing, guarantee that the initial condition of growth is not subject to the impact of reacting above next time, make the growth on substrate 5 all there is very high repeatability at every turn.
Vapour phase epitaxy on-line cleaning device of the present invention, its etching gas piping does not participate in forming the reaction of nitride, and the region that air-flow need to be by all formation parasitic reaction things also can be under suitable condition by it removal.Etching gas can be that HCl or chlorine or other have obvious corrasion for nitride, can not cause on reative cell, substrate bracket etc. the gas of obvious impact again simultaneously, these gases are in uniform temperature and concentration range, corrosion parasitic reaction product, can effectively remove these nitride, generally its concentration of the etching such as HCl or chlorine gas can change in 1% to 100% scope, and etching temperature used is between 50 ℃ to 2000 ℃.
The present invention is based on the vapour phase epitaxy equipment such as existing MOVPE or HVPE, especially refer to the VPE equipment for nitride, by utilizing original pipeline or adding new pipeline, pass into the etching gases such as nitridation or chlorine, the reaction chamber reacting after growth cleans.
The present invention does not need to increase too much scrap build cost, it is unique that what should be noted that is exactly the etch resistance that guarantees pipe-line system, especially to note the dry of stainless steel pipeline etc., avoid entering of moisture, to prevent from forming product corrosion stainless steel pipeline, valve and flowmeter, the Pressure gauges etc. such as hydrochloric acid.
According to a further aspect in the invention, a kind of vapour phase epitaxy on-line cleaning method has also been proposed, the method process is: after having grown needed epitaxial structure at reaction chamber 1, by purge gas air inlet 3, pass into the etching gases such as nitridation or chlorine, at substrate bracket 6, have at suitable temperature, pass into certain density this gas, through certain reaction time, can reach to remove and comprise reaction chamber 1, the effect of the nitride spurious product on substrate bracket 5 and exhaust outlet 4 etc., guarantee that the initial condition of growth is not subject to the impact of reacting above next time, make the growth on substrate 5 all there is very high repeatability at every turn.
Etching gas can be that HCl or chlorine or other have obvious corrasion for nitride, can not cause on reative cell, substrate bracket etc. the gas of obvious impact again simultaneously, these gases are in uniform temperature and concentration range, corrosion parasitic reaction product, can effectively remove these nitride, generally its concentration of the etching such as HCl or chlorine gas can change in 1% to 100% scope, and etching temperature used is between 50 ℃ to 2000 ℃.
Take HVPE growth GaN material as example, be as shown in Figure 2 one for the hvpe reactor boiler tube of growing gallium nitride thick film, shown in figure, be not use etchant gas to clean the Quartz stove tube of nitride, a stove growth through VPE, quartzy tube wall has adhered to the very thick parasitic nitride of one deck, if do not processed, will the follow-up growth of impact, comprise the transmission, growing environment, atmosphere of temperature etc., follow-up control is difficult to repeat; Fig. 3 has grown after a stove gallium nitride equally, carried out the Quartz stove tube after cleaning for 30 minutes at 800 ℃ with HCl, can see and there is no spurious product completely, and continued growth expection obtains and growth phase initial condition together above.
According to above description, the present invention can solve the repeated problem of parasitic reaction thing impact growth that growing nitride material exists, for the VPE equipment of high efficiency, high duplication, high reliability and low maintenance cost provides solution.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. a vapour phase epitaxy on-line cleaning device, comprise: reaction chamber, reaction gas inlet, purge gas entrance, exhaust outlet, substrate, substrate bracket, whirligig, is characterized in that, also comprise online cleaning device, in order to remove, remain in the parasitic nitride polluting on reaction chamber inwall and each parts.
2. vapour phase epitaxy on-line cleaning device according to claim 1, is characterized in that, described on-line cleaning device is etching gas piping.
3. vapour phase epitaxy on-line cleaning device according to claim 1, is characterized in that, described on-line cleaning device does not participate in forming the reaction of nitride.
4. vapour phase epitaxy on-line cleaning device according to claim 2, is characterized in that, described its air-flow of etching gas piping need to be by the region of all formation parasitic reaction things.
5. the outer on-line cleaning of gas phase according to claim 2 is prolonged device, it is characterized in that, described etching gas is for nitride, to have the gas of obvious corrasion.
6. the outer on-line cleaning of gas phase according to claim 5 is prolonged device, it is characterized in that, described etching gas is HCl or chlorine.
7. a vapour phase epitaxy on-line cleaning method, comprising:
On substrate, vapour phase epitaxy is prepared semiconductor epitaxial material;
To reaction chamber, pass into etching gas, in order to etching, remove and remain in the parasitic nitride polluting on reaction chamber inwall and each parts.
8. vapour phase epitaxy production method according to claim 6, is characterized in that, etching temperature used is between 50 ℃ to 2000 ℃.
9. vapour phase epitaxy production method according to claim 6, is characterized in that, described etching gas is HCl or chlorine.
10. vapour phase epitaxy production method according to claim 8, is characterized in that, its concentration of described HCl or chlorine changes in 1% to 100% scope.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410360667.2A CN104112662A (en) | 2014-07-25 | 2014-07-25 | VPE (Vapor Phase Epitaxy) online cleaning device and method |
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| CN201410360667.2A CN104112662A (en) | 2014-07-25 | 2014-07-25 | VPE (Vapor Phase Epitaxy) online cleaning device and method |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10270364A (en) * | 1997-03-28 | 1998-10-09 | Matsushita Electron Corp | Formation of semiconductor film |
| JP2008021829A (en) * | 2006-07-13 | 2008-01-31 | Nuflare Technology Inc | Cleaning method of exhausting portion in vapor-phase growth apparatus |
| JP2010177551A (en) * | 2009-01-30 | 2010-08-12 | Sumco Corp | Method for cleaning chamber for single wafer cvd |
| US20100273291A1 (en) * | 2009-04-28 | 2010-10-28 | Applied Materials, Inc. | Decontamination of mocvd chamber using nh3 purge after in-situ cleaning |
| CN103484933A (en) * | 2013-10-22 | 2014-01-01 | 西安电子科技大学 | Cleaning method for epitaxial chemical vapor deposition (CVD) device |
-
2014
- 2014-07-25 CN CN201410360667.2A patent/CN104112662A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10270364A (en) * | 1997-03-28 | 1998-10-09 | Matsushita Electron Corp | Formation of semiconductor film |
| JP2008021829A (en) * | 2006-07-13 | 2008-01-31 | Nuflare Technology Inc | Cleaning method of exhausting portion in vapor-phase growth apparatus |
| JP2010177551A (en) * | 2009-01-30 | 2010-08-12 | Sumco Corp | Method for cleaning chamber for single wafer cvd |
| US20100273291A1 (en) * | 2009-04-28 | 2010-10-28 | Applied Materials, Inc. | Decontamination of mocvd chamber using nh3 purge after in-situ cleaning |
| CN103484933A (en) * | 2013-10-22 | 2014-01-01 | 西安电子科技大学 | Cleaning method for epitaxial chemical vapor deposition (CVD) device |
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Application publication date: 20141022 |