CN104108948A - Method for preparing semiconductor reaction chamber component and component - Google Patents
Method for preparing semiconductor reaction chamber component and component Download PDFInfo
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- CN104108948A CN104108948A CN201310140944.4A CN201310140944A CN104108948A CN 104108948 A CN104108948 A CN 104108948A CN 201310140944 A CN201310140944 A CN 201310140944A CN 104108948 A CN104108948 A CN 104108948A
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- reaction chamber
- chamber parts
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- porous ceramic
- organic foam
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Abstract
The invention discloses a method for preparing a semiconductor reaction chamber component and the semiconductor reaction chamber component prepared by adopting the method. Firstly, a porous ceramic preformed body is prepared by a sintering method, a porous ceramic preformed body material is a mixture of one or more of plasma-corrosion-resistant aluminum oxide, yttrium oxide or silicon carbide; the porous ceramic preformed body obtained by sintering is subjected to cutting, polishing and other mechanical processing methods to be made into a required semiconductor reaction chamber component shape. The semiconductor reaction chamber component can be a gas spray header or a restraint ring and the like, the porosity degree of the obtained gas spray header can reach 95%, and the air outlet density of the gas spray header is greatly improved, so that the uniformity of gas going into a reaction chamber through the gas spray header is increased, and substrate etching is more uniform.
Description
Technical field
The present invention relates to semi-conductor reaction chamber parts manufacture technology field, relate in particular to a kind of manufacture technology field of ceramic-like semi-conductor reaction chamber parts.
Background technology
In the manufacturing processed of semiconductor devices, such as, in the treating processess such as etching, deposition, oxidation, sputter, conventionally can utilize plasma body to process substrate (semiconductor wafer, glass substrate etc.).Usually, for plasma processing apparatus, as the mode that generates plasma body, in the plasma processing apparatus of high frequency discharge mode, comprise capacitive coupling plasma reactor and jigger coupling type plasma reactor.Described condenser coupling type reactor disposes upper electrode and lower electrode conventionally, and preferably these two electrodes be arranged in parallel.And, conventionally on lower electrode, loading processed substrate, the high frequency electric source that plasma body is generated to use via integrator puts on upper electrode or lower electrode.By the high-frequency electric field being generated by this high frequency electric source, the external electrical of reactant gases is accelerated, thereby produce plasma body, lower substrate is carried out to Cement Composite Treated by Plasma.
In field of semiconductor manufacture, be widely used the spray header with shape spray air feed to pending substrate.For example, in plasma etching treatment equipment, in treatment chamber, be provided with the mounting table for loading substrate, the top position relative with this mounting table is provided with spray header, and the surface of this spray header is provided with multiple gas squit holes, produces plasma body with shape spray supply response gas.In the time that substrate is carried out to plasma etching treatment, the distribution consistency degree of plasma body has a significant impact substrate etching uniformity coefficient, and the distribution consistency degree of the reactant gases providing by spray header is determining the distribution consistency degree of plasma body, in order to obtain having the etching substrate of good homogeneity, need the gas squit hole of gas spray fine and close and even.At present conventional gas spray obtains gas squit hole through the method for the mechanical workouts such as boring, owing to considering cost and difficulty of processing, gas squit hole is usually difficult to accomplish densification and has the small-bore large degree of depth, in etching reaction chamber, the position of corresponding mechanical workout hole and the position of undressed hole, the ununiformity that exists air-flow to distribute, this kind of ununiformity causes the ununiformity of etching technics, and along with etched volume reduce with air-flow increase and remarkable all the more, limit etched volume and further reduced, the potentiality that working gas air-flow further increases.Meanwhile, the gas squit hole that machine made obtains, because hole wall is straight, has increased the risk of particle contamination.
Summary of the invention
In order to address the above problem, the invention provides a kind of method of preparing semi-conductor reaction chamber parts, described method comprises the following steps: to adopt the method for sintering to prepare porous ceramic preforms, and described porous ceramic preforms material is one or more mixing in aluminum oxide, yttrium oxide and silicon carbide; Described porous ceramic preforms hole is open pores, and porosity is 50%-95%, the shape that is required parts by described porous preform mechanical workout.
Preferably, the method for described sintering is the one in organic foam dipping method, powder sintering, slurry concretion method, sol-gel method.
Preferably, described organic foam dipping method step is:
A) prepare Organic Foam Material and ceramic size;
B) by Organic Foam Material dip treating in ceramic size;
C) remove unnecessary ceramic size;
D) organic foam that is impregnated with ceramic size is dried to moisture <1%;
E) after low temperature burning-off organic foam, be high temperature sintering within the scope of 1000 ° of C～1700 ° C in temperature.
Preferably, described organic foam material is polyesteramine.
Preferably, described ceramic size comprises ceramic powder, and described ceramic powder is one or more mixing in aluminum oxide, yttrium oxide and silicon carbide.
Preferably, described ceramic size also comprises solvent, binding agent, rheological agent, tensio-active agent and defoamer; Described solvent is water or ethanol; Described binding agent is aluminum hydroxide sol or polyvinyl alcohol; Described rheological agent is Walocel MT 20.000PV or Natvosol; Described tensio-active agent is polyethyene diamine; Described defoamer is alcohol resin or silicone.
Preferably, described ceramic size granularity is less than 50um, and absolute viscosity is 2～4Pa.s.
Further, the invention also discloses a kind of semi-conductor reaction chamber parts, it is characterized in that: described semi-conductor reaction chamber component materials is porous ceramic film material, described porous ceramic film material hole is open pores, porosity is 50%-95%, and described porous ceramic film material is one or more mixing in aluminum oxide, yttrium oxide and silicon carbide.
Further, described semi-conductor reaction chamber parts are gas spray.
Further, described parts are plasma containment ring.
The invention has the advantages that: the invention discloses a kind of method of semi-conductor reaction chamber parts and semi-conductor reaction chamber parts that adopt the method to prepare prepared, first adopt the method for sintering to prepare porous ceramic preforms, described porous ceramic preforms material is one or more mixing in aluminum oxide, yttrium oxide or the silicon carbide of anti-plasma corrosion; The porous ceramic preforms that sintering obtains waits machining process to be made into the semi-conductor reaction chamber component shape needing through cutting polishing.Described semi-conductor reaction chamber parts can be gas spray or plasma containment ring etc., the porosity of the gas spray obtaining can reach 95%, greatly improve the air outlet density of gas spray, the uniformity coefficient that gas is entered in reaction chamber by gas spray increases, and substrate etching is more even.
Brief description of the drawings
Fig. 1 illustrates the schematic flow sheet of making porous ceramic preforms;
Embodiment
For making object, technical scheme and the advantage of the embodiment of the present invention clearer, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is the present invention's part embodiment, instead of whole embodiment.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
Fig. 1 discloses a kind of schematic flow sheet of making porous ceramic preforms, and described schematic flow sheet illustrates the step schematic diagram that adopts the firing porous ceramic performs of organic foam dipping method.The method is by the three-dimensional netted skeleton structure of perforate of Organic Foam Material, and the porous ceramics of preparation has compared with high opening rate, can reach 50%-95%.
First the method for preparing semi-conductor reaction chamber parts of the present invention comprises Organic Foam Material and ceramic size preparation process 110, first the selection of Organic Foam Material will consider its pore size, because the pore dimension of organic foam is the principal element that determines last porous ceramic articles pore dimension, therefore should select pore opening and the suitable Organic Foam Material of porosity height according to the requirement of semi-conductor reaction chamber parts.Ceramic size is mainly made up of ceramic powder, solvent and additive, the combination of one or more in aluminum oxide, yttrium oxide or the silicon carbide of ceramic powder selection anti-plasma of the present invention corrosion, the silicon oxide that the aluminum oxide that the present embodiment selection content is 35% and content are 65%, in other embodiment, can select as required independent a kind of material or make ceramic powder with the material of other ratios.Solvent is generally water or ethanol, and additive comprises binding agent, rheological agent, tensio-active agent and defoamer; Described binding agent is aluminum hydroxide sol or polyvinyl alcohol etc.; Described rheological agent is Walocel MT 20.000PV or Natvosol etc.; Described tensio-active agent is polyethyene diamine; Described defoamer is alcohol resin or silicone etc.In the present invention, the granularity of ceramic size is less than 50um, and absolute viscosity is 2～4Pa.s.In dip treating step 120, Organic Foam Material is flooded in ceramic size, first excluding air before dipping, method for exhausting has normal pressure absorption method, vacuum suck method, mechanical stitch method and the manual method of rubbing conventionally.Repeatedly soaking paste is until reach density requirements.After Organic Foam Material dipping ceramic size, need to remove unnecessary ceramic size step 130, wherein the simplest method is that large-scale production adopts the equipment such as whizzer or rolling mill to complete with two plank extruding.
After removing unnecessary ceramic size step 130, carry out drying step 140, the normal method adopting have dry in the shade, oven dry or microwave oven is dry waits for when moisture is down to below 1.0%, can enter kiln and carry out sintering step 150.Sintering step 150 comprises low temperature and two stages of high temperature.Should slowly heat up and make the Organic Foam Material eliminating of slowly and fully volatilizing at low thermophase, temperature increasing schedule is formulated by the thermogravimetric analysis curve of Organic Foam Material.If it is too fast that low thermophase heats up, organism will produce violent decomposition and oxidation and emit at short notice a large amount of gas, causes idiosome cracking and efflorescence, therefore adopts method for oxidation to make organism pass through oxidative pathway to get rid of more.The high temperature sintering intensity of selecting suitable binding agent to improve idiosome is very important.The high temperature sintering temperature of sintering step 150 is generally 1000-1700 DEG C.After sintering step completes, obtain porous ceramic preforms, the porous ceramic preforms obtaining is carried out to the mechanical processing steps such as cut mechanically polishing, be made into the semi-conductor reaction chamber parts such as gas spray or plasma containment ring.
Except the sintering method that above-described embodiment is described, can also adopt powder sintering, slurry concretion method, sol-gel method medium, the present invention repeats no longer one by one.
The porosity of the gas spray that the method for describing by the present invention obtains can reach 95%, has greatly improved the air outlet density of gas spray, and the uniformity coefficient that gas is entered in reaction chamber by gas spray increases, and substrate etching is more even.Plasma containment ring is for being discharged to reaction chamber downstream with the reactant gases of crossing, limit plasma body passes wherein simultaneously, by the plasma containment ring that adopts the porous ceramic film material of sintering of the present invention to make, can effectively stop plasma body to pass through.
Although content of the present invention has been done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.Read after foregoing those skilled in the art, for multiple amendment of the present invention and substitute will be all apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (10)
1. a method of preparing semi-conductor reaction chamber parts, is characterized in that: described method comprises the following steps:
Adopt the method for sintering to prepare porous ceramic preforms, described porous ceramic preforms material is one or more mixing in aluminum oxide, yttrium oxide and silicon carbide, and described porous ceramic preforms hole is open pores, and porosity is 50%-95%;
It is the shape of described semi-conductor reaction chamber parts by described porous preform mechanical workout.
2. the method for preparing semi-conductor reaction chamber parts according to claim 1, is characterized in that: the method for described sintering is the one in organic foam dipping method, powder sintering, slurry concretion method, sol-gel method.
3. the method for preparing semi-conductor reaction chamber parts according to claim 2, is characterized in that: described organic foam dipping method step is:
A) prepare Organic Foam Material and ceramic size;
B) by Organic Foam Material dip treating in ceramic size;
C) remove unnecessary ceramic size;
D) organic foam that is impregnated with ceramic size is dried to moisture <1%;
E) after low temperature burning-off organic foam, be high temperature sintering within the scope of 1000 ° of C～1700 ° C in temperature.
4. the method for preparing semi-conductor reaction chamber parts according to claim 3, is characterized in that: described organic foam material is polyesteramine.
5. the method for preparing semi-conductor reaction chamber parts according to claim 3, is characterized in that: described ceramic size comprises ceramic powder, and described ceramic powder is one or more mixing in aluminum oxide, yttrium oxide and silicon carbide.
6. the method for preparing semi-conductor reaction chamber parts according to claim 3, is characterized in that: described ceramic size also comprises solvent, binding agent, rheological agent, tensio-active agent and defoamer; Described solvent is water or ethanol; Described binding agent is aluminum hydroxide sol or polyvinyl alcohol; Described rheological agent is Walocel MT 20.000PV or Natvosol; Described tensio-active agent is polyethyene diamine; Described defoamer is alcohol resin or silicone.
7. the method for preparing semi-conductor reaction chamber parts according to claim 3, is characterized in that: described ceramic size granularity is less than 50um, and absolute viscosity is 2～4Pa.s.
8. semi-conductor reaction chamber parts, it is characterized in that: described component materials is porous ceramic film material, described porous ceramic film material hole is open pores, and porosity is 50%-95%, and described porous ceramic film material is one or more mixing in aluminum oxide, yttrium oxide or silicon carbide.
9. reaction chamber parts according to claim 8, is characterized in that: described parts are gas spray.
10. reaction chamber parts according to claim 8, is characterized in that: described parts are plasma containment ring.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310140944.4A CN104108948A (en) | 2013-04-22 | 2013-04-22 | Method for preparing semiconductor reaction chamber component and component |
| TW103114005A TW201500325A (en) | 2013-04-22 | 2014-04-17 | Method for preparing semiconductor reaction chamber component and component thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310140944.4A CN104108948A (en) | 2013-04-22 | 2013-04-22 | Method for preparing semiconductor reaction chamber component and component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104108948A true CN104108948A (en) | 2014-10-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310140944.4A Pending CN104108948A (en) | 2013-04-22 | 2013-04-22 | Method for preparing semiconductor reaction chamber component and component |
Country Status (2)
| Country | Link |
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| CN (1) | CN104108948A (en) |
| TW (1) | TW201500325A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1287989A (en) * | 2000-10-27 | 2001-03-21 | 中国科学院上海硅酸盐研究所 | Method for mfg. high strength, screen like and porous ceramic |
| CN101007739A (en) * | 2006-12-01 | 2007-08-01 | 华南理工大学 | Method for preparing porous ceramic using modified starch |
| CN101519314A (en) * | 2008-02-29 | 2009-09-02 | 株式会社伊奈 | Glass substrate thermal treatment platform, manufacturing method thereof and glass substrate thermal treatment method |
| CN103021773A (en) * | 2012-12-31 | 2013-04-03 | 中微半导体设备(上海)有限公司 | Porous composite ceramic portion, preparing method thereof and plasma treating cavity |
-
2013
- 2013-04-22 CN CN201310140944.4A patent/CN104108948A/en active Pending
-
2014
- 2014-04-17 TW TW103114005A patent/TW201500325A/en unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1287989A (en) * | 2000-10-27 | 2001-03-21 | 中国科学院上海硅酸盐研究所 | Method for mfg. high strength, screen like and porous ceramic |
| CN101007739A (en) * | 2006-12-01 | 2007-08-01 | 华南理工大学 | Method for preparing porous ceramic using modified starch |
| CN101519314A (en) * | 2008-02-29 | 2009-09-02 | 株式会社伊奈 | Glass substrate thermal treatment platform, manufacturing method thereof and glass substrate thermal treatment method |
| CN103021773A (en) * | 2012-12-31 | 2013-04-03 | 中微半导体设备(上海)有限公司 | Porous composite ceramic portion, preparing method thereof and plasma treating cavity |
Non-Patent Citations (1)
| Title |
|---|
| 王静等: "《多孔生物材料》", 31 May 2012, 机械工业出版社 * |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI516462B (en) | 2016-01-11 |
| TW201500325A (en) | 2015-01-01 |
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Application publication date: 20141022 |