CN104103731A - Light-emitting diode structure and manufacturing method thereof - Google Patents
Light-emitting diode structure and manufacturing method thereof Download PDFInfo
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- CN104103731A CN104103731A CN201310113952.XA CN201310113952A CN104103731A CN 104103731 A CN104103731 A CN 104103731A CN 201310113952 A CN201310113952 A CN 201310113952A CN 104103731 A CN104103731 A CN 104103731A
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- type semiconductor
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 82
- 239000000126 substance Substances 0.000 claims abstract description 14
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims abstract description 7
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 7
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims abstract description 7
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000011777 magnesium Substances 0.000 claims abstract description 7
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 7
- 229910052700 potassium Inorganic materials 0.000 claims abstract description 7
- 239000011591 potassium Substances 0.000 claims abstract description 7
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 7
- 239000011734 sodium Substances 0.000 claims abstract description 7
- 239000011701 zinc Substances 0.000 claims abstract description 7
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 101
- 239000013047 polymeric layer Substances 0.000 claims description 54
- 238000000034 method Methods 0.000 claims description 40
- 238000010276 construction Methods 0.000 claims description 36
- 239000004065 semiconductor Substances 0.000 claims description 36
- 239000004575 stone Substances 0.000 claims description 18
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 238000000407 epitaxy Methods 0.000 abstract description 9
- 229920000642 polymer Polymers 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 238000000576 coating method Methods 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 8
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 4
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910003002 lithium salt Inorganic materials 0.000 description 2
- 159000000002 lithium salts Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- NNMHYFLPFNGQFZ-UHFFFAOYSA-M sodium polyacrylate Chemical compound [Na+].[O-]C(=O)C=C NNMHYFLPFNGQFZ-UHFFFAOYSA-M 0.000 description 2
- XKMZOFXGLBYJLS-UHFFFAOYSA-L zinc;prop-2-enoate Chemical compound [Zn+2].[O-]C(=O)C=C.[O-]C(=O)C=C XKMZOFXGLBYJLS-UHFFFAOYSA-L 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention provides a light-emitting diode structure and a manufacturing method thereof. The light-emitting diode comprises a substrate, a polymer layer and an epitaxy layer. The polymer layer is configured on the substrate. The chemical formula of the polymer layer is listed as follows: (img file='DDA00003006236300011.TIF' wi='1367' he='262' /), wherein M stands for sodium, zinc, magnesium or potassium. The epitaxy layer is configured on the polymer layer. The epitaxy layer is fixed on the substrate via the polymer layer.
Description
Technical field
The present invention relates to a kind of semiconductor structure and preparation method thereof, relate in particular to a kind of light emitting diode construction and preparation method thereof.
Background technology
In general, the manufacture method of light emitting diode construction is the epitaxial layer of first growing on brilliant substrate of heap of stone, but due to brilliant substrate meeting extinction of heap of stone, therefore must by wafer bonding method, the transfer base substrate of epitaxial layer and printing opacity be engaged again, then will build brilliant substrate removes, allow epitaxial layer be transferred on transfer base substrate, to avoid affecting bright dipping.The material of the adhesion coating that at present, wafer bonding method adopts comprises silicon dioxide or benzocyclobutene (benzocyclobutene, BCB).In the time adopting silicon dioxide layer as adhesion coating, silicon dioxide must first be deposited on transfer base substrate by plasma activated chemical vapour deposition (plasma enhanced chemical vapor deposition, PECVD).Then, post-depositional silicon dioxide layer is carried out to polish process and activation procedure, to form good composition surface.Afterwards, aim at epitaxial layer and transfer base substrate, come bonding epitaxy layer and transfer base substrate with the long-time high temperature (as 300 DEG C) of (as 1 hour) and the mode of high pressure (as 3000 newton/square centimeters).Finally, remove the making of building brilliant substrate and complete light-emitting diode.
In the time adopting benzocyclobutene layer as adhesion coating, need the first mode by rotary coating that benzocyclobutene is coated on epitaxial layer and transfer base substrate.Then, the benzocyclobutene after coating is carried out to baking program.Afterwards, aim at epitaxial layer and transfer base substrate, come bonding epitaxy layer and transfer base substrate with the long-time high temperature (as 220 DEG C) of (as 3 hours) and the mode of low pressure (as 1100 newton/square centimeters).Finally, remove the making of building brilliant substrate and complete light-emitting diode.But the required cost of the manufacture method of above-mentioned two kinds is higher and fabrication steps is also comparatively numerous and diverse.In addition, because above-mentioned two kinds of materials all need to become bonding epitaxy layer and transfer base substrate by long high temperature, likely make epitaxial layer Yin Gaowen and produce defect destroyed quality, therefore can affect the luminous efficiency of formed light emitting diode construction.
Summary of the invention
The invention provides a kind of light emitting diode construction and preparation method thereof, it has processing procedure simply and the advantage of low cost of manufacture.
Light emitting diode construction of the present invention, it comprises a substrate, a polymeric layer and an epitaxial layer.Polymeric layer is disposed on substrate, and wherein the chemical formula of polymeric layer is as follows:
Wherein M represent sodium, zinc, magnesium or potassium.Epitaxial layer is disposed on polymeric layer.Epitaxial layer is fixed on substrate by polymeric layer.
In one embodiment of this invention, the molecular weight of above-mentioned polymeric layer is between 10000 public grams/mol to 120000 public grams/mol.
In one embodiment of this invention, a in above-mentioned chemical formula equals 250 to 2500, and b equals 10 to 300.
In one embodiment of this invention, the value of above-mentioned a/b is between 12 to 20.
In one embodiment of this invention, above-mentioned substrate comprises a sapphire substrate.
In one embodiment of this invention, above-mentioned epitaxial layer comprises one first type semiconductor layer, a luminescent layer and a Second-Type semiconductor layer.Second-Type semiconductor layer is adjacent on polymeric layer.Luminescent layer is disposed between the first type semiconductor layer and Second-Type semiconductor layer.
The manufacture method of light emitting diode construction of the present invention, it comprises the steps.Form an epitaxial layer on a brilliant substrate of heap of stone.One transfer base substrate is provided.Provide a polymeric layer between the epitaxial layer and transfer base substrate of brilliant substrate of heap of stone.The chemical formula of polymeric layer is as follows:
Wherein M represent sodium, zinc, magnesium or potassium.Epitaxial layer and transfer base substrate are carried out to a connection process, so that epitaxial layer is fixed on transfer base substrate by polymeric layer.Remove brilliant substrate of heap of stone, and expose epitaxial layer.
In one embodiment of this invention, the molecular weight of above-mentioned polymeric layer is between 10000 public grams/mol to 120000 public grams/mol.
In one embodiment of this invention, a in above-mentioned chemical formula equals 250 to 2500, and b equals 10 to 300.
In one embodiment of this invention, institute's applied pressure of above-mentioned connection process between 400 newton/square centimeters between 4500 newton/square centimeters.
In one embodiment of this invention, the temperature of above-mentioned connection process is between 90 DEG C to 200 DEG C.
In one embodiment of this invention, the time of above-mentioned connection process is between 1 minute to 360 minutes.
In one embodiment of this invention, the step of above-mentioned formation epitaxial layer comprises and sequentially forms one first type semiconductor layer, a luminescent layer and a Second-Type semiconductor layer on brilliant substrate of heap of stone.
Based on above-mentioned, because not needing high temperature, polymeric layer of the present invention can come bonding epitaxy layer and transfer base substrate by the ion bond of polymeric layer.Therefore, between substrate of the present invention (being transfer base substrate) and epitaxial layer, can there is preferably interface and engage reliability, and then make the light emitting diode construction of the present invention can be not destroyed because of high temperature, can there is preferably luminous efficiency.On the other hand, because polymeric layer of the present invention has the advantage that cost is low and do not need complicated manufacture of semiconductor to form, therefore the manufacture method of light emitting diode construction of the present invention also can effectively reduce cost of manufacture and reduce fabrication steps.
For above-mentioned feature and advantage of the present invention can be become apparent, special embodiment below, and coordinate accompanying drawing to be described in detail below.
Brief description of the drawings
Fig. 1 is shown as the generalized section of a kind of light emitting diode construction of the present invention.
Fig. 2 A to Fig. 2 D is shown as the generalized section of the manufacture method of a kind of light emitting diode construction of one embodiment of the invention.
Symbol description:
100,100a: light emitting diode construction
110: substrate
110a: transfer base substrate
120: polymeric layer
130: epitaxial layer
132: Second-Type semiconductor layer
134: luminescent layer
136: the first type semiconductor layer
210: brilliant substrate of heap of stone
Embodiment
Fig. 1 is shown as the generalized section of a kind of light emitting diode construction of the present invention.Please refer to Fig. 1, in the present embodiment, light emitting diode construction 100 comprises a substrate 110, a polymeric layer 120 and an epitaxial layer 130.Polymeric layer 120 is disposed on substrate 110, and wherein the chemical formula of polymeric layer 120 is as follows:
Wherein M represent sodium, potassium, magnesium or zinc.Epitaxial layer 130 is disposed on polymeric layer 120, and epitaxial layer 130 is fixed on substrate 110 by polymeric layer 120.
More particularly, the substrate 110 of the present embodiment is for example a sapphire substrate, but not as limit.The molecular weight of polymeric layer 120 is for example between 10000 public grams/mol to 120000 public grams/mol.Further, if represent mechanical strength deficiency in the time that the molecular weight of polymeric layer 120 is less than 10000; If easily cause processing procedure manipulation to be difficult in the time that molecular weight is greater than 120000.Moreover a in chemical formula is for example 250 to 2500, b to be for example 10 to 300.When the ratio of a and b, be namely less than at 12 o'clock and represent in chemical formula-CH of the value of a/b
2-CH
2-bond degree deficiency, the physical property of polymeric layer 120, voltinism and mechanical strength can be not enough; In the time that the value of a/b is greater than 20, represent the functional group COOM content of activation very little, engaging force polymeric layer 120 and epitaxial layer 130 can be not enough.Therefore, in the present embodiment, preferably, the value of a/b is between 12 to 20.
Moreover the thickness of polymeric layer 120 is for example between 10 microns to 200 microns, and polymeric layer 120 is for example at least to be formed by monomer polymerizations such as ethene, acrylic acid, zinc salt, sodium salt and lithium salts.In addition, epitaxial layer 130 is for example a Second-Type semiconductor layer 132, one luminescent layer 134 and one first type semiconductor layer 136 form, in general, the first type semiconductor layer 136 is N-shaped semiconductor layer, Second-Type semiconductor layer 132 is p-type semiconductor layer, luminescent layer 134 is homogeneity junction (homo junction), heterojunction (hetero-junction), two heterojunctions (double hetero-junction), single quantum well (single quantum well), or the structure such as multiple quantum trap (multiple quantum well).Second-Type semiconductor layer 132 is adjacent to polymeric layer 120, and luminescent layer 134 is disposed between Second-Type semiconductor layer 132 and the first type semiconductor layer 136.
Because the light emitting diode construction 100 of the present embodiment is to adopt polymeric layer 120 to fix substrate 110 and epitaxial layer 130, wherein polymeric layer 120 has the good characteristic of engaging force.Therefore, between substrate 110 and epitaxial layer 130, can there is preferably interface and engage reliability, and then make the light emitting diode construction 100 of the present embodiment can there is preferably luminous efficiency.
Below only introduce light emitting diode construction 100 of the present invention, do not introduce the manufacture method of light emitting diode construction 100 of the present invention.To this, below will the manufacture method of light emitting diode construction 100a be described with an embodiment, and coordinate Fig. 2 A to Fig. 2 D to be described in detail the manufacture method of light emitting diode construction 100a.
Fig. 2 A to Fig. 2 D is shown as the generalized section of the manufacture method of a kind of light emitting diode construction of one embodiment of the invention.The present embodiment is continued to use element numbers and the partial content of previous embodiment, wherein adopts identical label to represent identical or approximate element, and has omitted the explanation of constructed content.Explanation about clipped can be with reference to previous embodiment, and it is no longer repeated for the present embodiment.
Please refer to Fig. 2 A, according to the manufacture method of the light emitting diode construction 100a of the present embodiment, first, form an epitaxial layer 130 on a brilliant substrate 210 of heap of stone.Wherein, forming the step of epitaxial layer 130 comprises and sequentially forms one first type semiconductor layer 136, a luminescent layer 134 and a Second-Type semiconductor layer 132 on brilliant substrate 120 of heap of stone, the first above-mentioned type semiconductor layer 136 is for example N-shaped semiconductor layer, Second-Type semiconductor layer 132 is for example p-type semiconductor layer, and luminescent layer 134 is for example multiple quantum trap (multiple quantum well) structure.Herein, brilliant substrate 210 of heap of stone is for example a GaAs substrate, a silicon substrate or a gallium nitride base board, is not limited in this.
Then, please refer to Fig. 2 B, a transfer base substrate 110a and a polymeric layer 120 are provided, wherein polymeric layer 120 is placed between the epitaxial layer 130 and transfer base substrate 110a of brilliant substrate 210 of heap of stone.Particularly, the chemical formula of polymeric layer 120 is as follows:
Wherein a in chemical formula is for example 250 to 2500, b to be for example 10 to 300, and M represent sodium, potassium, magnesium or zinc.In addition, the molecular weight of the polymeric layer 120 of the present embodiment is for example between 10000 public grams/mol to 120000 public grams/mol.Herein, transfer base substrate 110a is for example a sapphire substrate, but not as limit.The thickness of polymeric layer 130 is for example between 10 microns to 200 microns, and polymeric layer 130 is for example at least to be formed by monomer polymerizations such as ethene, acrylic acid, zinc salt, sodium salt and lithium salts.Specifically, polymeric layer 120 can be for example a scraps of paper shape, has deflection and the characteristic that can cut out arbitrarily, and required size while not needing can obtain engaging through complicated deposition or coating process, in order to the carrying out of follow-up connection process.
Afterwards, please refer to Fig. 2 C, epitaxial layer 130 is carried out to a connection process with transfer base substrate 110a, so that epitaxial layer 130 is fixed on transfer base substrate 110a by polymeric layer 120.Now, polymeric layer 120 and epitaxial layer 130 are between brilliant substrate 210 of heap of stone and transfer base substrate 110a.In the present embodiment, institute's applied pressure of connection process be for example between 400 newton/square centimeters between 4500 newton/square centimeters, be preferably 2000 newton/square centimeters.The temperature of connection process is for example between 90 DEG C to 200 DEG C, is preferably 150 DEG C.The time of connection process is for example between 1 minute to 360 minutes, is preferably 30 minutes.
Finally, please refer to Fig. 2 D, remove brilliant substrate 210 of heap of stone, and expose epitaxial layer 130.Now, polymeric layer 120 sequentially stacks on transfer base substrate 110 with Second-Type semiconductor layer 132, luminescent layer 134 and first type semiconductor layer 136 of epitaxial layer 130.So far, completed the making of package structure for LED 100a.
This enforcement is to adopt polymeric layer 120 to be used as the adhesion coating of conduction substrate 110a and epitaxial layer 130, therefore compared to known because adopting silicon dioxide layer or benzocyclobutene layer to be used as adhesion coating, and need come bonding epitaxy substrate and transfer base substrate with the high temperature (as 300 DEG C or 220 DEG C) of long-time (as 1 hour or 3 hours), the present embodiment only needs can reach by the low temperature of short time (as 30 minutes) (as 150 DEG C) effect of joint.Moreover, because polymeric layer 120 has deflection and the characteristic that can arbitrarily cut out, not needing to carry out complicated manufacture of semiconductor just can be formed on transfer base substrate again, thus, the manufacture method of the light-emitting diode 100a of the present embodiment can effectively shorten the processing procedure time, and can reduce cost of manufacture, and reduce fabrication steps.
In sum, because adopting the polymeric layer with the good characteristic of zygosity, the present invention fixes substrate and epitaxial layer, therefore between substrate and epitaxial layer, can there is preferably interface and engage reliability, and then make light emitting diode construction of the present invention can there is preferably luminous efficiency.In addition, compared to known because adopting silicon dioxide layer or benzocyclobutene layer to be used as adhesion coating, and need come bonding epitaxy substrate and transfer base substrate with long high temperature, the present invention is because adopting the polymeric layer that only needs can reach by the low temperature of short time the effect of joint, and the characteristic that this polymeric layer has deflection and can arbitrarily cut out, therefore the manufacture method of light-emitting diode of the present invention can effectively shorten the processing procedure time, and can reduce cost of manufacture, and reduces fabrication steps.
Although the present invention discloses as above with embodiment; but it is not in order to limit the present invention; any person of ordinary skill in the field; without departing from the spirit and scope of the present invention; when doing suitable change and equal replacement, therefore the scope that protection scope of the present invention should be defined with the application's claim is as the criterion.
Claims (13)
1. a light emitting diode construction, is characterized in that, comprising:
One substrate;
One polymeric layer, is disposed on this substrate, and wherein the chemical formula of this polymeric layer is as follows:
Wherein M represent sodium, zinc, magnesium or potassium; And
One epitaxial layer, is disposed on this polymeric layer, and wherein this epitaxial layer is fixed on this substrate by this polymeric layer.
2. light emitting diode construction according to claim 1, is characterized in that, the molecular weight of this polymeric layer is between 10000 public grams/mol to 120000 public grams/mol.
3. light emitting diode construction according to claim 1, is characterized in that, a in chemical formula equals 250 to 2500, and b equals 10 to 300.
4. light emitting diode construction according to claim 1, is characterized in that, the value of this a/b is between 12 to 20.
5. light emitting diode construction according to claim 1, is characterized in that, this substrate comprises a sapphire substrate.
6. light emitting diode construction according to claim 1, it is characterized in that, this epitaxial layer comprises one first type semiconductor layer, a luminescent layer and a Second-Type semiconductor layer, this Second-Type semiconductor layer is adjacent to this polymeric layer, and this luminescent layer is disposed between this first type semiconductor layer and this Second-Type semiconductor layer.
7. a manufacture method for light emitting diode construction, is characterized in that, comprising:
Form an epitaxial layer on a brilliant substrate of heap of stone;
One transfer base substrate is provided;
Provide a polymeric layer between this epitaxial layer and this transfer base substrate of this brilliant substrate of heap of stone, the chemical formula of this polymeric layer is as follows:
Wherein M represent sodium, zinc, magnesium or potassium;
This brilliant substrate of heap of stone and this transfer base substrate are carried out to a connection process, so that this brilliant substrate of heap of stone is fixed on this transfer base substrate by this polymeric layer; And
Remove this brilliant substrate of heap of stone, and expose this epitaxial layer.
8. the manufacture method of light emitting diode construction according to claim 7, is characterized in that, the molecular weight of this polymeric layer is between 10000 public grams/mol to 120000 public grams/mol.
9. the manufacture method of light emitting diode construction according to claim 7, is characterized in that, a in chemical formula equals 250 to 2500, and b equals 10 to 300.
10. the manufacture method of light emitting diode construction according to claim 7, is characterized in that, institute's applied pressure of this connection process between 400 newton/square centimeters between 4500 newton/square centimeters.
The manufacture method of 11. light emitting diode constructions according to claim 7, is characterized in that, the temperature of this connection process is between 90 DEG C to 200 DEG C.
The manufacture method of 12. light emitting diode constructions according to claim 7, is characterized in that, the time of this connection process is between 1 minute to 360 minutes.
The manufacture method of 13. light emitting diode constructions according to claim 7, is characterized in that, the step that forms this epitaxial layer comprises that sequentially forming one first type semiconductor layer, a luminescent layer and a Second-Type semiconductor layer builds on brilliant substrate in this.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310113952.XA CN104103731A (en) | 2013-04-03 | 2013-04-03 | Light-emitting diode structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310113952.XA CN104103731A (en) | 2013-04-03 | 2013-04-03 | Light-emitting diode structure and manufacturing method thereof |
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| CN104103731A true CN104103731A (en) | 2014-10-15 |
Family
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| CN201310113952.XA Pending CN104103731A (en) | 2013-04-03 | 2013-04-03 | Light-emitting diode structure and manufacturing method thereof |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060091419A1 (en) * | 2004-11-03 | 2006-05-04 | Chih-Chiang Lu | Light emitting diode |
| US20070114519A1 (en) * | 2005-11-22 | 2007-05-24 | Seiko Epson Corporation | Light-emitting device and electronic apparatus |
| CN101821866A (en) * | 2007-10-08 | 2010-09-01 | 3M创新有限公司 | Light emitting diode with bonded semiconductor wavelength converter |
| CN101925996A (en) * | 2008-01-24 | 2010-12-22 | 布鲁尔科技公司 | Device wafer reversibly is installed in method on the carrier substrate |
| TW201306298A (en) * | 2011-07-19 | 2013-02-01 | Phostek Inc | Semiconductor light emitting device and manufacturing method thereof |
-
2013
- 2013-04-03 CN CN201310113952.XA patent/CN104103731A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060091419A1 (en) * | 2004-11-03 | 2006-05-04 | Chih-Chiang Lu | Light emitting diode |
| US20070114519A1 (en) * | 2005-11-22 | 2007-05-24 | Seiko Epson Corporation | Light-emitting device and electronic apparatus |
| CN101821866A (en) * | 2007-10-08 | 2010-09-01 | 3M创新有限公司 | Light emitting diode with bonded semiconductor wavelength converter |
| CN101925996A (en) * | 2008-01-24 | 2010-12-22 | 布鲁尔科技公司 | Device wafer reversibly is installed in method on the carrier substrate |
| TW201306298A (en) * | 2011-07-19 | 2013-02-01 | Phostek Inc | Semiconductor light emitting device and manufacturing method thereof |
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