CN104103561A - Etching cavity and system for etching silicon dioxide through gaseous hydrogen fluoride - Google Patents
Etching cavity and system for etching silicon dioxide through gaseous hydrogen fluoride Download PDFInfo
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- CN104103561A CN104103561A CN201410354793.7A CN201410354793A CN104103561A CN 104103561 A CN104103561 A CN 104103561A CN 201410354793 A CN201410354793 A CN 201410354793A CN 104103561 A CN104103561 A CN 104103561A
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- etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00531—Dry etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
Abstract
The invention discloses an etching cavity and system for etching silicon dioxide through gaseous hydrogen fluoride. The etching system comprises the etching cavity, a gas generating device and a control system, the gas generating device is used for mixing etching gas, nitrogen and ethanol gas and inputting the mixture to the etching cavity, the etching cavity is provided with a gas inlet and a gas outlet, a rotary platform, a heater and a gas flow homogenizing device are arranged in the etching cavity, the mixed gas in the etching cavity is well mixed through the gas flow homogenizing device, the rotary platform is provided with a semiconductor apparatus to be etched, the control system controls the gas generating device to generate the mixed gas, the mixed gas is well mixed in the etching cavity, and the control system controls the rotary platform to rotate and the heater to heat.
Description
Technical field
The present invention relates to etching equipment technical field, relate in particular to a kind of etching cavity for gaseous hydrogen fluoride etching silicon dioxide and etching system thereof.
Background technology
MEMS manufacturing process and semiconductor and microelectronic technique are substantially similar, have comprised the basic process steps such as photoetching, extension, thin film deposition, oxidation, diffusion, injection, sputter, evaporation, etching, scribing and encapsulation.Wherein traditional lithographic method is dry plasma etching and selective wet etching, and the former cannot realize large area deep hole etching, and this basic demand of MEMS technique just.
In traditional wet-etching technology, (comprising the normal pressure and temperature gaseous state hf etching that someone proposes in the recent period) is all to carry out corrode silicon dioxide with hydrofluoric acid, in process due to etching process and later stage cleaning, there is the existence of water, cause in etching process because the effects such as stress or surface tension cause adhesion, and may cause structural breakdown, eventually to technique failure; And because the degree of depth of etching is darker, cause uniformity also not ideal.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of etching cavity for gaseous hydrogen fluoride etching silicon dioxide and etching system thereof, described system is by being used anhydrous hydrogen fluoride steam to carry out etching in conjunction with absolute ethyl alcohol steam, avoided in etching process because the effects such as the stress of water or surface tension cause device adhesion maybe may cause the phenomenon of structural breakdown, and by using etching cavity, can effectively control course of reaction, improve etching homogeneity.
For solving the problems of the technologies described above, the technical solution used in the present invention is: a kind of etching cavity for gaseous hydrogen fluoride etching silicon dioxide, it is characterized in that: described etching cavity comprises cavity main body, upper cover, tracheae, rotation platform, uniform flow pipe, heater and even flow plate, the top of described cavity main body is used upper cover to seal, cavity main body is provided with air inlet and gas outlet, described air inlet and gas outlet are positioned at the left and right sides of described cavity main body, in described air inlet, be provided with air inlet pipe, in gas outlet, be provided with escape pipe, the air inlet pipe of cavity main body inside is provided with air inlet uniform flow pipe, the escape pipe of cavity main body inside is provided with the uniform flow pipe of giving vent to anger, the left side of described air inlet uniform flow pipe is provided with air inlet even flow plate, described right side of giving vent to anger uniform flow pipe is provided with the even flow plate of giving vent to anger, between described air inlet uniform flow pipe and air inlet even flow plate, be provided with right heater, the described uniform flow pipe and give vent to anger and be provided with left heater between even flow plate of giving vent to anger, air inlet even flow plate and give vent to anger and keep interval to arrange between even flow plate, described rotation platform is at air inlet even flow plate and give vent to anger between even flow plate.
Further technical scheme is: described uniform flow pipe is T-shaped.
Further technical scheme is: described even flow plate is provided with air vent hole.
The invention also discloses a kind of system for gaseous hydrogen fluoride etching silicon dioxide, it is characterized in that comprising: above-mentioned etching cavity, gas generation apparatus and control system, gas generation apparatus is used for the etching gas producing, nitrogen and alcohol gas mix and are input in etching cavity, described etching cavity is provided with air inlet and gas outlet, in etching cavity, be provided with rotation platform, heater and gas flow-harmonization device, the mist that enters etching cavity fully mixes by gas flow-harmonization device, on rotation platform, be placed with semiconductor device to be etched, control system is controlled gas generation apparatus and is produced mist, mist fully mixes in etching cavity, control system is controlled rotation platform rotation and control heater heats.
Further technical scheme is: described etching system also comprises vacuum pump and exhaust gas processing device, the gas outlet of described etching cavity is connected with the air inlet of exhaust gas processing device by vacuum pump, control system control vacuum pump carries out air-breathing, and making in etching cavity is negative pressure state.
Further technical scheme is: described gas generating unit comprises hydrogen fluoride gas tank, nitrogen pot and ethanol gasifying pot, and the gas outlet of described hydrogen fluoride gas tank is tightly connected through the air inlet of pressure-reducing valve and flowmeter and described etching cavity successively; The gas outlet of described nitrogen pot is tightly connected through the air inlet of pressure-reducing valve and flowmeter and described etching cavity successively; Described ethanol gasifying pot is tightly connected by the air inlet of flowmeter and pipeline and described etching cavity.
Further technical scheme is: described control system is used PLC as controller.
The beneficial effect that adopts technique scheme to produce is: described gas etching system adopts anhydrous hydrogen fluoride steam (VHF) to carry out etching in conjunction with absolute ethyl alcohol steam, do not comprise water or steam, avoided in etching process because the effects such as the stress of water or surface tension cause device adhesion maybe may cause the phenomenon of structural breakdown, owing to having taked the lithographic method of anhydrous hydrogen fluoride gas, make parts and dark chamber parts that etching structure is less become very easy; Because control system adopts PLC and touch screen human-computer interface, the accurate technological parameters such as temperature, flow, pressure of controlling, add the etching cavity of particular design, in etching cavity, be provided with even mechanism of qi structure and wafer rotating mechanism, can effectively control course of reaction, improve etching homogeneity, keep higher selectivity simultaneously.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation.
Fig. 1 is the theory diagram of system of the present invention;
Fig. 2 is the decomposition texture schematic diagram of etching cavity in Fig. 1;
Wherein: 1, gas generation apparatus 11, hydrogen fluoride gas tank 12, nitrogen pot 13, ethanol gasifying pot 14, flowmeter 15, pressure-reducing valve 2, etching cavity 21, cavity main body 22, upper cover 23, rotation platform 24, air inlet pipe 25, escape pipe 26, air inlet uniform flow pipe 27, the uniform flow pipe 28 of giving vent to anger, air inlet even flow plate 29, the even flow plate 210 of giving vent to anger, right heater 211, left heater 3, control system 4, vacuum pump 5, exhaust gas processing device.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only a part of embodiment of the present invention, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
A lot of details have been set forth in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here and implement, those skilled in the art can do similar popularization without prejudice to intension of the present invention in the situation that, so the present invention is not subject to the restriction of following public specific embodiment.
First as shown in Figure 2, the invention discloses a kind of etching cavity for gaseous hydrogen fluoride etching silicon dioxide, described etching cavity 2 comprises cavity main body 21, upper cover 22, tracheae, rotation platform 23, uniform flow pipe, heater and even flow plate.The top of described cavity main body 21 is used upper cover 22 to seal, cavity main body 21 is provided with air inlet and gas outlet, described air inlet and gas outlet are positioned at the left and right sides of described cavity main body, in described air inlet, be provided with air inlet pipe 24, in gas outlet, be provided with escape pipe 25, the air inlet pipe 24 of cavity main body 21 inside is provided with air inlet uniform flow pipe 26, the escape pipe 25 of cavity main body 21 inside is provided with the uniform flow pipe 27 of giving vent to anger, described uniform flow pipe is T-shaped, for air inlet uniform flow pipe 26, the lower end of uniform flow pipe is air inlet, and the opening of the left and right sides, upper end is gas outlet; For the uniform flow pipe 27 of giving vent to anger, the lower end of uniform flow pipe is gas outlet, and the opening of the left and right sides, upper end is air inlet.
The left side of described air inlet uniform flow pipe 26 is provided with air inlet even flow plate 28, described right side of giving vent to anger uniform flow pipe 27 is provided with the even flow plate 29 of giving vent to anger, between described air inlet uniform flow pipe 26 and air inlet even flow plate 28, be provided with right heater 210, the described uniform flow pipe 27 and give vent to anger and be provided with left heater 211 between even flow plate 29 of giving vent to anger, air inlet even flow plate 28 and give vent to anger and keep interval to arrange between even flow plate 29, described even flow plate is provided with air vent hole, the diameter of air vent hole can be arranged to very little, more even for the mixed gas composition that makes to pass through; Between air inlet even flow plate 28, cavity main body 21 and upper cover 22 and between the even flow plate 29 of giving vent to anger, cavity main body 21 and upper cover 22, form little cavity, between air inlet even flow plate 28, the even flow plate 29 of giving vent to anger, cavity main body 21 and upper cover 22, form large cavity, described rotation platform 23 is in air inlet even flow plate 28 and the large cavity of giving vent to anger between even flow plate 29.
In order to reach the object that improves etching homogeneity, etching cavity has taked secondary uniform flow (to be respectively uniform flow of T-shaped uniform flow pipe, even flow plate secondary uniform flow), rotation platform, and the measure such as cavity symmetric design, and take heating plate to heat, Temperature Distribution is staged temperature gradient from top to bottom, with this, improves the uniformity of etching.
During work, the etchant gas mixing is under the effect of place, etching cavity gas outlet vacuum pump, from air inlet, enter in cavity, be introduced into air inlet uniform flow pipe, in little cavity between air inlet even flow plate and cavity main body, begin to take shape dispensing gas, in the large cavity that enters into air inlet even flow plate 28 in aperture on air inlet even flow plate again and give vent to anger between even flow plate 29, form uniform laminar flow gas, flow through uniformly the surface of wafer, through the give vent to anger even flow plate and uniform flow pipe of giving vent to anger, arrive gas outlet again, complete the corrosion to wafer.In this process, under the drive of rotation platform motor, rotate simultaneously, further improved the interior uniformity of sheet of etching.The heater that multiple spot is controlled is arranged on the outside of chamber, by adjusting top-down temperature gradient distribution, good improvement uniformity between sheet.
As shown in Figure 1, the invention also discloses a kind of system for gaseous hydrogen fluoride etching silicon dioxide, comprising: above-mentioned etching cavity 2, gas generation apparatus 1, control system 3, vacuum pump 4 and exhaust gas processing device 5.
Gas generation apparatus 1 is for by the etching gas producing, nitrogen and alcohol gas mix and are input in etching cavity 2, described etching cavity 2 is provided with air inlet and gas outlet, in etching cavity 2, be provided with rotation platform, heater and gas flow-harmonization device, the mist that enters etching cavity 2 fully mixes by gas flow-harmonization device, on rotation platform 23, be placed with semiconductor device to be etched, control system 3 is controlled gas generation apparatus 1 and is produced mist, mist is in the interior abundant mixing of etching cavity 2, control system 3 is controlled rotation platform rotation and control heater heats, the gas outlet of described etching cavity 2 is connected with the air inlet of exhaust gas processing device 5 by vacuum pump 4, control system is controlled vacuum pump and is carried out air-breathing, make in etching cavity 2 is negative pressure state.
Described gas generating unit 1 comprises hydrogen fluoride gas tank 11, nitrogen pot 12 and ethanol gasifying pot 13, and the gas outlet of described hydrogen fluoride gas tank 11 is tightly connected with the air inlet of described etching cavity 2 through pressure-reducing valve 15 and flowmeter 14 successively; The gas outlet of described nitrogen pot 12 is tightly connected with the air inlet of described etching cavity 2 through pressure-reducing valve 15 and flowmeter 14 successively; Described ethanol gasifying pot 13 is tightly connected by the air inlet of flowmeter 14 and pipeline and described etching cavity 2.
After liquid hydrogen fluoride evaporation, in pipeline, become 2-3Kg/cm
2hydrogen fluoride, by the hydrogen fluoride steam becoming through pressure-reducing valve decompression slightly lower than normal pressure, (need rear end to have vacuum as power, this measure is in order to prevent the leakage of VHF), pass through again mass flowmenter (MFC) and carry out effective flow control, enter again etching cavity, in technique, it,, as etching agent, as critical process gas, carrys out etching silicon dioxide.
Gaseous state ethanol, liquid ethanol becomes steam from ethanol gasification tank, then with the mass flowmenter of break valve, carries out effective flow control through two ends, then enters etching cavity, and in technique, it is as dehydrating agent with etch rate is auxiliary controls.
High pure nitrogen, after pressure-reducing valve decompression, then carries out effective flow control through two ends with the mass flowmenter of break valve, then enters etching cavity.
Acting as of nitrogen: A, displacement: before etching, the air in chamber is become to pure nitrogen after replacing for several times, avoid air to impact etching technics; After etching, remaining etching gas is replaced into pure nitrogen, avoids the person and equipment to damage; B, vacuum breaker: while needing, by inflated with nitrogen, negative pressure in chamber is become to normal pressure, to open chamber door; C, cavity pressure adjustment: in reaction, by adding the method for appropriate nitrogen, reach the object that does not change VHF flow and change cavity pressure.
Vacuum pump is true on the one hand for etching cavity provides suitable operation pressure environment, and it also provides power as VHF and alcohol vapour transmission on the other hand, and the control of vacuum pressure realizes the closed-loop control of pressure by the frequency control of pressure sensor and vacuum pump.
Temperature control system is divided into three warm areas, is respectively gas panels ambient temperature, etching cavity temperature, ethanol gas gasifying device temperature.This relatively independent closed loop temperature control of three portions, can be set to respectively different temperature, and the Temperature Distribution of etching cavity can also be arranged to upper and lower different staged Temperature Distribution, to meet different process requirements.
The task of exhaust gas processing device is to be the gas that meets environmental requirement by the vent gas treatment after etching, is mainly absorption tower function, absorb residual hydrogen fluoride gas wherein, and partial reaction product is as SiF
4, H
2o etc.
Systems soft ware part:
The software of whole system is divided into four parts, and operation automatically, manually controls setting parameter and help.
Software operation is divided into two parts, manually with automatic.In the time of manually, can operate separately each switching value and analog quantity (safety interlock function as usual), while being mainly used in debugging and Iterim Change technique, use.The design of the automatic part of software fully takes into account flexibility and the fail safe of user's technique, the nitrogen replacement program of several before and after having designed.In technical process, reaction chamber temperature, each gas flow, chamber pressures etc. all keep stable level, to guarantee the stability of technique.
When program brings into operation, first pass through nitrogen replacement for several times, guarantee to be full of completely in reative cell high pure nitrogen, and then vacuumize, start to pass into process gas by each gas flow arranging, vacuum pump works on simultaneously, keeps the pressure of reative cell constant by set point.Arrive after the process time of setting, stop process gas, enters exhaust displacement, and after displacement for several times, guaranteeing does not have after remaining process gas in reative cell substantially, then inflated with nitrogen is to atmospheric pressure, provides the complete sound and light alarm of technique, reminds operating personnel.
Software parameter is set and is comprised: displacement number of times, and each gas flow, etch period, the parameters such as reaction pressure, can arrange 10 groups of parameters altogether, i.e. 10 cover processes.Helping interface is in-local specification, at any time can reference to facilitate.
Can liquefy for the water that guarantee to generate, taked three measures:
1, in etching cavity, temperature, higher than normal temperature, is controlled at 40-70 ℃.
2, etching cavity internal pressure is lower than normal pressure, and we know that air pressure is lower, and water is more easily vaporized.
3, the moisture producing in the participation etching of ethanol is combined into rapidly the bond of second alcohol and water by absolute ethyl alcohol steam, avoided the individualism of water, thereby avoids condensing of water.
To sum up, described gas etching system adopts anhydrous hydrogen fluoride steam (VHF) to carry out etching in conjunction with absolute ethyl alcohol steam, do not comprise water or steam, avoided in etching process because the effects such as the stress of water or surface tension cause device adhesion maybe may cause the phenomenon of structural breakdown, owing to having taked the lithographic method of anhydrous hydrogen fluoride gas, make parts and dark chamber parts that etching structure is less become very easy; Because control system adopts PLC and touch screen human-computer interface, the accurate technological parameters such as temperature, flow, pressure of controlling, add the etching cavity of particular design, in etching cavity, be provided with even mechanism of qi structure and wafer rotating mechanism, can effectively control course of reaction, improve etching homogeneity, keep higher selectivity simultaneously.
Claims (7)
1. the etching cavity for gaseous hydrogen fluoride etching silicon dioxide, it is characterized in that: described etching cavity (2) comprises cavity main body (21), upper cover (22), tracheae, rotation platform (23), uniform flow pipe, heater and even flow plate, the top of described cavity main body (21) is used upper cover (22) to seal, cavity main body (21) is provided with air inlet and gas outlet, described air inlet and gas outlet are positioned at the left and right sides of described cavity main body, in described air inlet, be provided with air inlet pipe (24), in gas outlet, be provided with escape pipe (25), the inner air inlet pipe (24) of cavity main body (21) is provided with air inlet uniform flow pipe (26), the inner escape pipe (25) of cavity main body (21) is provided with the uniform flow pipe (27) of giving vent to anger, the left side of described air inlet uniform flow pipe (26) is provided with air inlet even flow plate (28), described right side of giving vent to anger uniform flow pipe (27) is provided with the even flow plate of giving vent to anger (29), between described air inlet uniform flow pipe (26) and air inlet even flow plate (28), be provided with right heater (210), described giving vent to anger is provided with left heater (211) between uniform flow pipe (27) and the even flow plate of giving vent to anger (29), between air inlet even flow plate (28) and the even flow plate of giving vent to anger (29), keep interval to arrange, described rotation platform (23) is positioned between air inlet even flow plate (28) and the even flow plate of giving vent to anger (29).
2. according to the gaseous hydrogen fluoride etching system shown in claim 1, it is characterized in that: described uniform flow pipe is T-shaped.
3. according to the gaseous hydrogen fluoride etching system shown in claim 1, it is characterized in that: described even flow plate is provided with air vent hole.
4. the system for gaseous hydrogen fluoride etching silicon dioxide, it is characterized in that comprising: the etching cavity (2) as described in any one in claim 1-3, gas generation apparatus (1) and control system (3), gas generation apparatus (1) is for by the etching gas producing, nitrogen and alcohol gas mix and are input in etching cavity (2), described etching cavity (2) is provided with air inlet and gas outlet, etching cavity is provided with rotation platform in (2), heater and gas flow-harmonization device, the mist that enters etching cavity (2) fully mixes by gas flow-harmonization device, rotation platform is placed with semiconductor device to be etched on (23), control system (3) is controlled gas generation apparatus (1) and is produced mist, mist fully mixes in etching cavity (2), control system (3) is controlled rotation platform rotation and control heater heats.
5. gaseous hydrogen fluoride etching system according to claim 4, it is characterized in that: described etching system also comprises vacuum pump (4) and exhaust gas processing device (5), the gas outlet of described etching cavity (2) is connected with the air inlet of exhaust gas processing device (5) by vacuum pump (4), control system control vacuum pump carries out air-breathing, and making in etching cavity (2) is negative pressure state.
6. according to the gaseous hydrogen fluoride etching system described in claim 4 or 5, it is characterized in that: described gas generating unit (1) comprises hydrogen fluoride gas tank (11), nitrogen pot (12) and ethanol gasifying pot (13), the gas outlet of described hydrogen fluoride gas tank (11) is tightly connected with the air inlet of described etching cavity (2) through pressure-reducing valve (15) and flowmeter (14) successively; The gas outlet of described nitrogen pot (12) is tightly connected with the air inlet of described etching cavity (2) through pressure-reducing valve (15) and flowmeter (14) successively; Described ethanol gasifying pot (13) is tightly connected by the air inlet of flowmeter (14) and pipeline and described etching cavity (2).
7. according to the gaseous hydrogen fluoride etching system described in claim 4 or 5, it is characterized in that: described control system (3) is used PLC as controller.
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| CN201410354793.7A CN104103561B (en) | 2014-07-24 | 2014-07-24 | Etching cavity and etching system thereof for gaseous hydrogen fluoride etching silicon dioxide |
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| EP3229262A1 (en) * | 2016-04-05 | 2017-10-11 | Siltronic AG | Method for the vapour phase etching of a semiconductor wafer for trace metal analysis |
| CN107393848A (en) * | 2017-07-12 | 2017-11-24 | 江苏鲁汶仪器有限公司 | A kind of gaseous corrosion cavity of high sealed |
| CN107445136A (en) * | 2017-07-05 | 2017-12-08 | 中北大学 | Silicon etching system based on gas phase TMAH |
| CN107546145A (en) * | 2017-08-18 | 2018-01-05 | 清华大学 | Wafer is in level detecting apparatus, wafer bracket and wafer in position detecting method |
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| US5628829A (en) * | 1994-06-03 | 1997-05-13 | Materials Research Corporation | Method and apparatus for low temperature deposition of CVD and PECVD films |
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| US6499425B1 (en) * | 1999-01-22 | 2002-12-31 | Micron Technology, Inc. | Quasi-remote plasma processing method and apparatus |
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| EP3229262A1 (en) * | 2016-04-05 | 2017-10-11 | Siltronic AG | Method for the vapour phase etching of a semiconductor wafer for trace metal analysis |
| WO2017174371A1 (en) * | 2016-04-05 | 2017-10-12 | Siltronic Ag | Method for the vapour phase etching of a semiconductor wafer for trace metal analysis |
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| CN107393848A (en) * | 2017-07-12 | 2017-11-24 | 江苏鲁汶仪器有限公司 | A kind of gaseous corrosion cavity of high sealed |
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| CN112750738A (en) * | 2021-01-18 | 2021-05-04 | 中国电子科技集团公司第四十八研究所 | Ion beam etching equipment and etching method thereof |
| CN112750738B (en) * | 2021-01-18 | 2024-02-23 | 中国电子科技集团公司第四十八研究所 | Ion beam etching equipment and etching method thereof |
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Denomination of invention: Etching cavity and system for etching silicon dioxide through gaseous hydrogen fluoride Effective date of registration: 20191120 Granted publication date: 20160824 Pledgee: Hebei re Guarantee Co.,Ltd. Pledgor: SHENTONG PHOTOELECTRICITY SCIENCE AND TECHNOLOGY CO.,LTD. Registration number: Y2019130000010 |
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Date of cancellation: 20201224 Granted publication date: 20160824 Pledgee: Hebei re Guarantee Co.,Ltd. Pledgor: SHENTONG PHOTOELECTRICITY SCIENCE AND TECHNOLOGY Co.,Ltd. Registration number: Y2019130000010 |
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