CN104102384B - Touch detection circuit - Google Patents
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Abstract
Description
技术领域technical field
本发明是有关于一种触控电路,且特别是有关于一种触控侦测电路。The present invention relates to a touch circuit, and in particular to a touch detection circuit.
背景技术Background technique
随着科技的发展与进步,电子产品的用户接口也由传统的按键、键盘或鼠标逐渐演变为更为人性化的触控式接口。举例来说,使用者可利用手指或触控光笔在光感应式的触控面板上进行触控操作。另一方面,在触控面板中常会利用光侦测电路来感应目前用户的触控位置。举例来说,图1绘示一种光侦测电路100的示意图。光侦测电路100可应用于光感应式的触控面板以侦测触控面板的触控点位置。With the development and progress of science and technology, the user interface of electronic products has gradually evolved from traditional keys, keyboards or mice to a more humanized touch interface. For example, the user can use a finger or a stylus to perform touch operations on the light-sensitive touch panel. On the other hand, a light detection circuit is often used in the touch panel to sense the current touch position of the user. For example, FIG. 1 shows a schematic diagram of a light detection circuit 100 . The light detection circuit 100 can be applied to a light-sensitive touch panel to detect the position of a touch point on the touch panel.
光侦测电路100包括晶体管Q、电容C以及光侦测晶体管P。触控面板的扫描线SCAN1可用来控制晶体管Q的开关状态。光侦测晶体管P在不同强度的光线照射下会产生不同的电流Id。电容C的一端耦接于晶体管Q,另一端则耦接于电源VDD。电容C是用来储存电流Id所产生的电荷。当晶体管Q开启时,电容C中储存的电荷会经由晶体管Q传送至触控面板的数据线DATA1。由于电流Id不同,电容C中的电荷量也会不同。因此,光侦测电路100可依据数据线DATA1所接收到的电荷量来判断触控面板目前的触碰情况。The light detection circuit 100 includes a transistor Q, a capacitor C and a light detection transistor P. As shown in FIG. The scan line SCAN1 of the touch panel can be used to control the switching state of the transistor Q. The photodetecting transistor P generates different currents Id under different intensities of light. One end of the capacitor C is coupled to the transistor Q, and the other end is coupled to the power supply VDD. The capacitor C is used to store the charge generated by the current Id. When the transistor Q is turned on, the charge stored in the capacitor C will be transferred to the data line DATA1 of the touch panel through the transistor Q. Since the current Id is different, the amount of charge in the capacitor C will also be different. Therefore, the light detection circuit 100 can determine the current touch condition of the touch panel according to the amount of charge received by the data line DATA1.
然而,当光侦测晶体管P所侦测到的光强度不足或是感光时间不够长时,电容C中所储存的电荷量过少会使得端点VA的电压不足,导致触控面板无法判断触控点的位置。另一方面,通常会将光侦测晶体管P的闸极G与源极S两端的电压差(即Vgs)操作在负偏压下以控制电流Id,但这容易让光侦测晶体管P发生劣化的情形。However, when the intensity of light detected by the photodetecting transistor P is insufficient or the photosensitive time is not long enough, the charge stored in the capacitor C is too small, which will cause the voltage of the terminal VA to be insufficient, and the touch panel cannot judge the touch. point position. On the other hand, the voltage difference between the gate G and the source S of the photodetection transistor P (i.e., Vgs) is usually operated under a negative bias voltage to control the current Id, but this is easy to cause deterioration of the photodetection transistor P situation.
发明内容Contents of the invention
本发明提供一种触控侦测电路,藉由增加触控侦测电路的光感应速度以提升触控面板的光感应敏感度。The invention provides a touch detection circuit, which improves the light sensitivity of the touch panel by increasing the light sensing speed of the touch detection circuit.
本发明的触控侦测电路包括触控单元、比较单元以及触控结果产生单元。触控单元依据被触碰状态以提供侦测信号。比较单元耦接触控单元并提供参考电流。比较单元并依据侦测信号以及第一参考电压的电压差来产生触控状态电流。比较单元比较参考电流以及触控状态电流来产生比较电压。触控结果产生单元耦接比较器并依据比较电压来提供触控结果信号。The touch detection circuit of the present invention includes a touch unit, a comparison unit and a touch result generation unit. The touch unit provides a detection signal according to a touched state. The comparison unit is coupled to the touch control unit and provides a reference current. The comparison unit generates a touch state current according to the voltage difference between the detection signal and the first reference voltage. The comparison unit compares the reference current and the touch state current to generate a comparison voltage. The touch result generating unit is coupled to the comparator and provides a touch result signal according to the comparison voltage.
基于上述,本发明的触控侦测电路中的比较单元藉由比较触控单元在不同的触控状态下所提供的侦测信号与第一参考电压两者的电压差来产生比较电压。接着,触控结果产生单元会依据比较电压来提供触控结果信号。如此一来,本发明的触控侦测电路可藉由分析触控结果信号来得知触控面板目前的触碰状态并得知触控面板上触控点的位置。Based on the above, the comparison unit in the touch detection circuit of the present invention generates a comparison voltage by comparing the voltage difference between the detection signal provided by the touch unit in different touch states and the first reference voltage. Then, the touch result generating unit provides a touch result signal according to the comparison voltage. In this way, the touch detection circuit of the present invention can obtain the current touch state of the touch panel and the position of the touch point on the touch panel by analyzing the touch result signal.
以下结合附图和具体实施例对本发明进行详细描述,但不作为对本发明的限定。The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.
附图说明Description of drawings
图1绘示一种光侦测电路100的示意图。FIG. 1 is a schematic diagram of a light detection circuit 100 .
图2~图3A、图4~图8分别绘示本发明多个实施例的触控侦测电路的示意图。2 to 3A, and FIGS. 4 to 8 respectively illustrate schematic diagrams of touch detection circuits according to multiple embodiments of the present invention.
图3B绘示图3A触控侦测电路300的读出波形示意图。FIG. 3B is a schematic diagram of readout waveforms of the touch detection circuit 300 in FIG. 3A .
其中,附图标记Among them, reference signs
100:光侦测电路100: Light detection circuit
200、300、400、500、600、700、800:触控侦测电路200, 300, 400, 500, 600, 700, 800: touch detection circuit
202、302、402、502、602、702、802:触控单元202, 302, 402, 502, 602, 702, 802: touch unit
204、304、404、504、604、704、804:比较单元204, 304, 404, 504, 604, 704, 804: comparison unit
206、306、406、506、606、706、806:触控结果产生单元206, 306, 406, 506, 606, 706, 806: touch result generation unit
A、B:曲线A, B: curve
C、CT、CR:电容C, CT, CR: capacitance
DATA1、DATA3:资料线DATA1, DATA3: data line
D1~D3:二极管D1~D3: Diodes
F:波形周期F: Waveform period
G:闸极G: gate
Id:电流Id: current
IREF1:参考电流IREF1: reference current
IT1、IT2:触控状态电流IT1, IT2: touch state current
P、P1~P7:光侦测晶体管P, P1~P7: photodetection transistor
S:源极S: source
SCAN1、SCAN3:扫描线SCAN1, SCAN3: scan lines
SD1~SD6:侦测信号SD1~SD6: detection signal
ST1、ST2:触控结果信号ST1, ST2: touch result signal
VA、VA1~VA3:端点VA, VA1~VA3: endpoints
VCOMP、VCOMP1、VCOMP2:比较电压VCOMP, VCOMP1, VCOMP2: comparison voltage
VREF1、VC2、VC4、T1、T2:参考电压VREF1, VC2, VC4, T1, T2: Reference voltage
VC1、VC3:参考电压源VC1, VC3: reference voltage source
VC5:参考电源VC5: Reference power supply
VDD:电源VDD: power supply
Q、M1~M6、MA、MB1~MB4、MC1~MC2、MD1~MD4、MF、Q, M1~M6, MA, MB1~MB4, MC1~MC2, MD1~MD4, MF,
MN:晶体管MN: Transistor
具体实施方式detailed description
下面结合附图和具体实施例对本发明技术方案进行详细的描述,以更进一步了解本发明的目的、方案及功效,但并非作为本发明所附权利要求保护范围的限制。The technical solution of the present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments to further understand the purpose, solution and effect of the present invention, but it is not intended to limit the scope of protection of the appended claims of the present invention.
图2绘示本发明一实施例的触控侦测电路200的示意图。触控侦测电路200包括触控单元202、比较单元204以及触控结果产生单元206。触控侦测电路200可应用在光感应式的触控面板中以侦测触控面板上的触控点位置。触控单元202依据被触碰状态以提供侦测信号SD1。触控单元202可以包括光传感器(Photo Sensor)、光侦测薄膜晶体管(Thin FilmTransistor,TFT)或是其他具有光侦测功能的电子组件。触控单元202所感受到的光强度会随着触控单元202是否被触碰而有所不同。在不同的触碰状态下,触控单元202会产生不同的侦测信号SD1。其中,侦测信号SD1为电压信号。FIG. 2 is a schematic diagram of a touch detection circuit 200 according to an embodiment of the present invention. The touch detection circuit 200 includes a touch unit 202 , a comparison unit 204 and a touch result generation unit 206 . The touch detection circuit 200 can be applied in a photosensitive touch panel to detect the position of a touch point on the touch panel. The touch unit 202 provides a detection signal SD1 according to a touched state. The touch control unit 202 may include a photo sensor (Photo Sensor), a light detection thin film transistor (Thin Film Transistor, TFT), or other electronic components with a light detection function. The light intensity felt by the touch unit 202 is different depending on whether the touch unit 202 is touched. In different touch states, the touch unit 202 generates different detection signals SD1. Wherein, the detection signal SD1 is a voltage signal.
另一方面,比较单元204可以由TFT或是其他具有比较器功能的电子电路所组成。比较单元204会耦接触控单元202以接收侦测信号SD1,并比较侦测信号SD1与参考电压VREF1两者的电压差,来产生不同的触控状态电流。接着,比较单元204会将触控状态电流与参考电流进行比较,再产生比较电压VCOMP。值得注意的是,参考电流的电流值可以被预先设定来当作比较基准。On the other hand, the comparing unit 204 can be composed of TFT or other electronic circuits with comparator function. The comparison unit 204 is coupled to the touch control unit 202 to receive the detection signal SD1, and compares the voltage difference between the detection signal SD1 and the reference voltage VREF1 to generate different touch state currents. Next, the comparison unit 204 compares the touch state current with the reference current, and then generates a comparison voltage VCOMP. It should be noted that the current value of the reference current can be preset as a comparison reference.
触控结果产生单元206耦接比较单元204,触控结果产生单元206接收比较电压VCOMP后会依据比较电压VCOMP以提供触控结果信号ST1。举例来说,当触控单元202被用户的手指触碰时,触控单元202接收到的光线会因被使用者的手指遮蔽而减少,侦测信号SD1的电压会小于参考电压VREF1的电压。比较单元204计算侦测信号SD1的电压与参考电压VREF1的电压差来产生比较电压VCOMP,并将比较电压VCOMP会传递给触控结果产生单元206。触控结果产生单元206则可针对比较电压VCOMP进行放大,并提供相对应的触控结果信号ST1。如此一来,触控侦测电路200可藉由触控结果信号ST1得知目前触控单元202是处于被触碰的状态。The touch result generation unit 206 is coupled to the comparison unit 204 , and the touch result generation unit 206 provides a touch result signal ST1 according to the comparison voltage VCOMP after receiving the comparison voltage VCOMP. For example, when the touch unit 202 is touched by the user's finger, the light received by the touch unit 202 will be reduced due to being shielded by the user's finger, and the voltage of the detection signal SD1 will be lower than the voltage of the reference voltage VREF1 . The comparison unit 204 calculates the voltage difference between the detection signal SD1 and the reference voltage VREF1 to generate a comparison voltage VCOMP, and transmits the comparison voltage VCOMP to the touch result generation unit 206 . The touch result generating unit 206 can amplify the comparison voltage VCOMP and provide a corresponding touch result signal ST1. In this way, the touch detection circuit 200 can know that the touch unit 202 is currently in a touched state through the touch result signal ST1.
同理可知,当触控单元202未被触碰时,触控单元202因未被物体遮蔽而能接收到较多的光线,侦测信号SD1的电压会大于参考电压VREF1的电压。如此一来,触控侦测电路200可藉由与上述范例不同的比较电压VCOMP来得知不同的触控结果信号ST1,并透过不同的触控结果信号ST1来得知触控单元202目前未被用户的手指所触碰。Similarly, when the touch unit 202 is not touched, the touch unit 202 can receive more light because it is not covered by objects, and the voltage of the detection signal SD1 will be greater than the voltage of the reference voltage VREF1 . In this way, the touch detection circuit 200 can obtain a different touch result signal ST1 through the comparison voltage VCOMP different from the above example, and know that the touch unit 202 is not currently touched by the different touch result signal ST1. touched by the user's finger.
更值得一提的,上述的参考电流的电流值可以被设置在第一电流以及第二电流的电流值间。其中的第一电流是触控单元202有被触碰时比较单元204所对应产生的触控状态电流,而第二电流则是触控单元202未被触碰时比较单元204所对应产生的触控状态电流。举例来说,参考电流的电流值可以等于侦测信号SD1的电压与参考电压VREF1的电压差等于0时,比较单元204对应产生的触控状态电流的电流值。It is worth mentioning that the above reference current can be set between the first current and the second current. The first current is the touch state current corresponding to the comparison unit 204 when the touch unit 202 is touched, and the second current is the touch current corresponding to the comparison unit 204 when the touch unit 202 is not touched. control state current. For example, the current value of the reference current may be equal to the current value of the touch state current correspondingly generated by the comparison unit 204 when the voltage difference between the detection signal SD1 and the reference voltage VREF1 is equal to 0.
图3A绘示本发明另一实施例的触控侦测电路300的示意图。触控侦测电路300包括触控单元302、比较单元304以及触控结果产生单元306。触控单元302包括二极管D1以及光侦测晶体管P1。二极管D1的阳极耦接参考电压源VC1,二极管D1的阴极提供侦测信号SD2。在此实施例中,光侦测晶体管P1为N型TFT,光侦测晶体管P1具有第一端(例如汲极)、第二端(例如源极)以及控制端(例如闸极)。光侦测晶体管P1的第一端耦接二极管D1的阴极,光侦测晶体管P1的第二端及控制端相互耦接至参考电压VC2。从另一个观点来看,当二极管D1导通时可提供固定的电阻值,而光侦测晶体管P1会随着侦测到的光强度不同而具有变动的电阻值。因此,触控单元302可视为一个分压电路,其中,二极管D1与光侦测晶体管P1会针对参考电压源VC1与参考电压VC2的电压差进行分压以产生侦测信号SD2。FIG. 3A is a schematic diagram of a touch detection circuit 300 according to another embodiment of the present invention. The touch detection circuit 300 includes a touch unit 302 , a comparison unit 304 and a touch result generation unit 306 . The touch unit 302 includes a diode D1 and a light detection transistor P1. The anode of the diode D1 is coupled to the reference voltage source VC1, and the cathode of the diode D1 provides the detection signal SD2. In this embodiment, the photodetection transistor P1 is an N-type TFT, and the photodetection transistor P1 has a first terminal (such as a drain), a second terminal (such as a source) and a control terminal (such as a gate). The first terminal of the photodetection transistor P1 is coupled to the cathode of the diode D1, and the second terminal and the control terminal of the photodetection transistor P1 are mutually coupled to the reference voltage VC2. From another point of view, when the diode D1 is turned on, it can provide a fixed resistance value, while the light detection transistor P1 has a variable resistance value according to the detected light intensity. Therefore, the touch control unit 302 can be regarded as a voltage divider circuit, wherein the diode D1 and the photodetection transistor P1 divide the voltage of the reference voltage source VC1 and the reference voltage VC2 to generate the detection signal SD2.
比较单元304包括二极管D2以及晶体管M1。二极管D2的阳极耦接参考电压源VC3,二极管D2的阴极产生比较电压VCOMP1。二极管D2用以产生参考电流IREF1。在此实施例中,晶体管M1为N型TFT,晶体管M1具有第一端(例如汲极)、第二端(例如源极)以及控制端(例如闸极)。晶体管M1的第一端耦接至二极管D2的阴极,晶体管M1的控制端用以接收侦测信号SD2,晶体管M1的第二端则耦接至参考电压VC4。假设侦测信号SD2为电压信号,晶体管M1会依据侦测信号SD2与参考电压VC4两者的电压差来产生触控状态电流IT1。The comparing unit 304 includes a diode D2 and a transistor M1. The anode of the diode D2 is coupled to the reference voltage source VC3, and the cathode of the diode D2 generates the comparison voltage VCOMP1. Diode D2 is used to generate reference current IREF1. In this embodiment, the transistor M1 is an N-type TFT, and the transistor M1 has a first terminal (such as a drain), a second terminal (such as a source) and a control terminal (such as a gate). The first terminal of the transistor M1 is coupled to the cathode of the diode D2, the control terminal of the transistor M1 is used to receive the detection signal SD2, and the second terminal of the transistor M1 is coupled to the reference voltage VC4. Assuming that the detection signal SD2 is a voltage signal, the transistor M1 generates the touch state current IT1 according to the voltage difference between the detection signal SD2 and the reference voltage VC4 .
举例来说,当使用者的手指触碰到触控单元302时,光侦测晶体管P1所接收到的光线会比使用者的手指未接触触控单元302时来的少。因此,触控单元302在不同的触碰状态下,光侦测晶体管P1所产生的漏电流也会不同。换句话说,二极管D1的阴极端所提供的侦测信号SD2也会不同。因此,对晶体管M1而言,触控单元302在不同的触碰状态下,控制端与第二端两端所产生的电压差(Vgs)也会有所差异,并使得晶体管M1所产生的触控状态电流IT1不相同。在此实施例中,二极管D2所提供的参考电流IREF1可视为一个固定的参考电流。比较单元304则针对不同的触控状态电流IT1与参考电流IREF1做比较,再依据比较结果产生比较电压VCOMP1,详细说明请参考后述。For example, when the user's finger touches the touch unit 302 , the light received by the light detection transistor P1 will be less than when the user's finger does not touch the touch unit 302 . Therefore, under different touch states of the touch unit 302 , the leakage current generated by the photodetection transistor P1 will also be different. In other words, the detection signal SD2 provided by the cathode terminal of the diode D1 will also be different. Therefore, for the transistor M1, under different touch states of the touch unit 302, the voltage difference (Vgs) generated between the control terminal and the second terminal will also be different, and the touch generated by the transistor M1 will be different. The control state current IT1 is different. In this embodiment, the reference current IREF1 provided by the diode D2 can be regarded as a fixed reference current. The comparison unit 304 compares the current IT1 in different touch states with the reference current IREF1 , and generates a comparison voltage VCOMP1 according to the comparison result. Please refer to the following for details.
触控结果产生单元306包括晶体管MA以及晶体管MN。在此实施例中,晶体管MA与晶体管MN为N型TFT。晶体管MA具有第一端(例如汲极)、第二端(例如源极)以及控制端(例如闸极)。晶体管MA的第一端接收参考电源VC5,晶体管MA的控制端耦接比较电压VCOMP1。晶体管MN具有第一端(例如汲极)、第二端(例如源极)以及控制端(例如闸极)。晶体管MN的第一端耦接至晶体管MA的第二端,晶体管MN的控制端耦接至扫描线SCAN3,晶体管MN的第二端产生触控结果信号ST2并传至耦接的资料线DATA3。The touch result generating unit 306 includes a transistor MA and a transistor MN. In this embodiment, the transistor MA and the transistor MN are N-type TFTs. The transistor MA has a first terminal (such as a drain), a second terminal (such as a source) and a control terminal (such as a gate). The first terminal of the transistor MA receives the reference power VC5 , and the control terminal of the transistor MA is coupled to the comparison voltage VCOMP1 . The transistor MN has a first terminal (such as a drain), a second terminal (such as a source) and a control terminal (such as a gate). The first terminal of the transistor MN is coupled to the second terminal of the transistor MA, the control terminal of the transistor MN is coupled to the scan line SCAN3 , and the second terminal of the transistor MN generates a touch result signal ST2 and transmits it to the coupled data line DATA3 .
图3B绘示图3A触控侦测电路300的读出波形示意图。其中,图3B的横轴代表时间,单位可以为微秒(μs),纵轴则代表电压,单位可以为毫伏(mV),F代表波形周期。请同时参考图3A与图3B,曲线A代表触控单元302未侦测到光线变化时,晶体管M1汲极的电压变化。另一方面,曲线B代表触控单元302侦测到光线变化时,晶体管M1汲极的电压变化。由曲线B可知,当触控单元302侦测到光线变化时,晶体管M1汲极的电压只需要0.01个F的时间就可达到比较电压VCOMP1。从另一个观点来看,触控侦测电路300可减少光侦测晶体管P1的感光时间以增加感应速度。FIG. 3B is a schematic diagram of readout waveforms of the touch detection circuit 300 in FIG. 3A . Wherein, the horizontal axis of FIG. 3B represents time, and the unit may be microsecond (μs), the vertical axis represents voltage, and the unit may be millivolt (mV), and F represents the waveform period. Please refer to FIG. 3A and FIG. 3B at the same time. Curve A represents the voltage change of the drain of the transistor M1 when the touch unit 302 does not detect any light change. On the other hand, the curve B represents the change of the drain voltage of the transistor M1 when the touch unit 302 detects the light change. From the curve B, it can be seen that when the touch unit 302 detects a light change, the drain voltage of the transistor M1 only needs 0.01 F to reach the comparison voltage VCOMP1. From another point of view, the touch detection circuit 300 can reduce the light-sensing time of the light-detecting transistor P1 to increase the sensing speed.
以下将详细说明比较单元304与触控结果产生单元306两者之间的动作关系。比较单元304所产生的比较电压VCOMP1会被传送至晶体管MA的闸极。在此,晶体管MA可以作为一个放大器,并依据参考电源VC5及控制端所接收的比较电压VCOMP1来进行放大。放大后的信号则被传送至晶体管MN,并在当晶体管MN被导通后,放大后的信号透过晶体管MN传递至数据线DATA3以产生触控结果信号ST2。The action relationship between the comparing unit 304 and the touch result generating unit 306 will be described in detail below. The comparison voltage VCOMP1 generated by the comparison unit 304 is transmitted to the gate of the transistor MA. Here, the transistor MA can be used as an amplifier to amplify according to the reference power VC5 and the comparison voltage VCOMP1 received by the control terminal. The amplified signal is transmitted to the transistor MN, and when the transistor MN is turned on, the amplified signal is transmitted to the data line DATA3 through the transistor MN to generate the touch result signal ST2.
图4绘示本发明再一实施例的触控侦测电路400的示意图。触控侦测电路400包括触控单元402、比较单元404以及触控结果产生单元406。触控单元402包括晶体管MD1以及光侦测晶体管P2。在此实施例中,晶体管MD1为N型TFT,晶体管MD1具有第一端(例如汲极)、第二端(例如源极)以及控制端(例如闸极)。晶体管MD1的第一端耦接参考电压源VC1,晶体管MD1的第二端及控制端会共同耦接并提供侦测信号SD3。比较单元404包括晶体管MB1与晶体管M2。在此实施例中,晶体管MB1与晶体管M2为N型TFT,晶体管MB1具有第一端(例如汲极)、第二端(例如源极)以及控制端(例如闸极)。晶体管MB1的第一端接收参考电压源VC3,晶体管MB1的控制端以及第二端共同耦接至晶体管M2的第一端。从另一个观点来看,图3A中的二极管D1可视为图4中的晶体管MD1,二极管D2可视为晶体管MB1。另一方面,光侦测晶体管P2、晶体管M2、参考电压VC2、参考电压VC4以及触控结果产生单元406的耦接关系请参考图3A,不在此赘述。FIG. 4 is a schematic diagram of a touch detection circuit 400 according to yet another embodiment of the present invention. The touch detection circuit 400 includes a touch unit 402 , a comparison unit 404 and a touch result generation unit 406 . The touch unit 402 includes a transistor MD1 and a light detecting transistor P2. In this embodiment, the transistor MD1 is an N-type TFT, and the transistor MD1 has a first terminal (such as a drain), a second terminal (such as a source) and a control terminal (such as a gate). The first terminal of the transistor MD1 is coupled to the reference voltage source VC1, and the second terminal and the control terminal of the transistor MD1 are commonly coupled to provide a detection signal SD3. The comparing unit 404 includes a transistor MB1 and a transistor M2. In this embodiment, the transistor MB1 and the transistor M2 are N-type TFTs, and the transistor MB1 has a first terminal (such as a drain), a second terminal (such as a source) and a control terminal (such as a gate). The first terminal of the transistor MB1 receives the reference voltage source VC3 , and the control terminal and the second terminal of the transistor MB1 are commonly coupled to the first terminal of the transistor M2 . From another point of view, the diode D1 in FIG. 3A can be regarded as the transistor MD1 in FIG. 4 , and the diode D2 can be regarded as the transistor MB1. On the other hand, please refer to FIG. 3A for the coupling relationship of the photodetecting transistor P2 , the transistor M2 , the reference voltage VC2 , the reference voltage VC4 , and the touch result generating unit 406 , and will not be repeated here.
以下将说明触控侦测电路400的操作情形,请同时参考图3。晶体管MD1与光侦测晶体管P2会针对参考电压源VC1与参考电压VC2的电压差进行分压以产生侦测信号SD3。另一方面,由于晶体管MB1的控制端与第二端相互耦接,因此晶体管MB1的控制端与第二端两端的电压差为零。比较单元404会比较晶体管MB1的控制端与第二端两端的电压差(为零)与晶体管M2的控制端与第二端两端的电压差(侦测信号SD3与参考电压VC4的电压差)。当侦测信号SD3与参考电压VC4两者的电压差大于零时(例如触碰单元402被手指触碰),端点VA1的电压会趋近于参考电压VC4。另一方面,当晶体管M2的控制端与第二端两端的电压差小于零时(例如触碰单元402未被手指触碰),端点VA1的电压会趋近于参考电压源VC3。如此一来,触碰单元402在不同的触碰情况下,端点VA1的电压就会出现明显的差异。The operation of the touch detection circuit 400 will be described below, please also refer to FIG. 3 . The transistor MD1 and the photodetection transistor P2 divide the voltage of the reference voltage source VC1 and the reference voltage VC2 to generate the detection signal SD3. On the other hand, since the control terminal and the second terminal of the transistor MB1 are coupled to each other, the voltage difference between the control terminal and the second terminal of the transistor MB1 is zero. The comparison unit 404 compares the voltage difference between the control terminal and the second terminal of the transistor MB1 (which is zero) with the voltage difference between the control terminal and the second terminal of the transistor M2 (the voltage difference between the detection signal SD3 and the reference voltage VC4 ). When the voltage difference between the detection signal SD3 and the reference voltage VC4 is greater than zero (for example, the touch unit 402 is touched by a finger), the voltage of the terminal VA1 approaches the reference voltage VC4 . On the other hand, when the voltage difference between the control terminal and the second terminal of the transistor M2 is less than zero (for example, the touch unit 402 is not touched by a finger), the voltage of the terminal VA1 approaches the reference voltage source VC3 . In this way, under different touch conditions of the touch unit 402 , the voltage of the terminal VA1 will be significantly different.
图5绘示本发明又一实施例的触控侦测电路500的示意图。触控侦测电路500包括触控单元502、比较单元504以及触控结果产生单元506。触控单元502包括晶体管MD2以及光侦测晶体管P3。比较单元504包括晶体管MB2与晶体管M3。触控结果产生单元506的作动情形请参考触控结果产生单元306。请同时参考图4与图5,触控侦测电路400与触控侦测电路500的差异在于,晶体管M3的控制端与第二端分别接收参考电压VC4与侦测信号SD4。然而,晶体管M2的耦接关系与晶体管M3相反,晶体管M2的控制端与第二端分别接收侦测信号SD3与参考电压VC4。FIG. 5 is a schematic diagram of a touch detection circuit 500 according to another embodiment of the present invention. The touch detection circuit 500 includes a touch unit 502 , a comparison unit 504 and a touch result generation unit 506 . The touch unit 502 includes a transistor MD2 and a light detection transistor P3. The comparison unit 504 includes a transistor MB2 and a transistor M3. For the operation of the touch result generating unit 506 , please refer to the touch result generating unit 306 . Please refer to FIG. 4 and FIG. 5 at the same time. The difference between the touch detection circuit 400 and the touch detection circuit 500 is that the control terminal and the second terminal of the transistor M3 receive the reference voltage VC4 and the detection signal SD4 respectively. However, the coupling relationship of the transistor M2 is opposite to that of the transistor M3, and the control terminal and the second terminal of the transistor M2 respectively receive the detection signal SD3 and the reference voltage VC4.
图6绘示本发明更一实施例的触控侦测电路600的示意图。触控侦测电路600包括触控单元602、比较单元604以及触控结果产生单元606。触控单元602包括晶体管MD3、晶体管MC1、光侦测晶体管P4以及光侦测晶体管P5。比较单元604包括晶体管MB3与晶体管M4。请同时参考图4至图6,触控单元602与触控单元402以及触控单元502相比,触控单元602中增加了光侦测晶体管P5以及晶体管MC1。光侦测晶体管P5以及晶体管MC1会针对参考电压源VC1与参考电压VC4的电压差进行分压以产生参考电压T1。晶体管M4的控制端接收侦测信号SD5,晶体管M4的第二端则接收参考电压T1。FIG. 6 is a schematic diagram of a touch detection circuit 600 according to another embodiment of the present invention. The touch detection circuit 600 includes a touch unit 602 , a comparison unit 604 and a touch result generation unit 606 . The touch control unit 602 includes a transistor MD3 , a transistor MC1 , a photodetection transistor P4 and a photodetection transistor P5 . The comparison unit 604 includes a transistor MB3 and a transistor M4. Please refer to FIG. 4 to FIG. 6 at the same time. Compared with the touch unit 402 and the touch unit 502 , the touch unit 602 has a light detection transistor P5 and a transistor MC1 added in the touch unit 602 . The photodetecting transistor P5 and the transistor MC1 divide the voltage difference between the reference voltage source VC1 and the reference voltage VC4 to generate the reference voltage T1 . The control terminal of the transistor M4 receives the detection signal SD5, and the second terminal of the transistor M4 receives the reference voltage T1.
在另一实施例中,晶体管MD3可以用二极管来取代,二极管的阳极耦接至参考电压源VC1,二极管的阴极用以提供侦测信号SD5。另一方面,晶体管MC1也可以用二极管来取代,二极管的阳极耦接至参考电压源VC1,二极管的阴极用以提供参考电压T1。在图6的实施例中,当光侦测晶体管P4与光侦测晶体管P5所受到的光照强度改变时,侦测信号SD5与参考电压T1也会随之改变。另一方面,请参考图4至图6,图4中晶体管M2的第二端与图5中晶体管M3的控制端都是耦接到参考电压VC4(可视为一个固定的电压)。然而,晶体管M4的控制端(接收侦测信号SD5)与第二端(接收参考电压T1)两端的电压差会随着光强度不同而有较大幅度的改变,并藉以提升触控侦测的敏感度。In another embodiment, the transistor MD3 can be replaced by a diode, the anode of the diode is coupled to the reference voltage source VC1 , and the cathode of the diode is used to provide the detection signal SD5. On the other hand, the transistor MC1 can also be replaced by a diode, the anode of the diode is coupled to the reference voltage source VC1 , and the cathode of the diode is used to provide the reference voltage T1 . In the embodiment of FIG. 6 , when the light intensity received by the photodetection transistor P4 and the photodetection transistor P5 changes, the detection signal SD5 and the reference voltage T1 also change accordingly. On the other hand, please refer to FIG. 4 to FIG. 6 , the second terminal of the transistor M2 in FIG. 4 and the control terminal of the transistor M3 in FIG. 5 are both coupled to the reference voltage VC4 (which can be regarded as a fixed voltage). However, the voltage difference between the control terminal (receives the detection signal SD5) and the second terminal (receives the reference voltage T1) of the transistor M4 will change greatly with the light intensity, thereby improving the touch detection efficiency. sensitivity.
图7绘示本发明又一实施例的触控侦测电路700的示意图。触控侦测电路700包括触控单元702、比较单元704以及触控结果产生单元706。触控单元702包括晶体管MD4、晶体管MC2、光侦测晶体管P6以及光侦测晶体管P7。比较单元704包括晶体管MF、晶体管MB4以及晶体管M5。在此实施例中,晶体管MF、晶体管MB4以及晶体管M5为N型TFT。晶体管MF具有第一端(例如汲极)、第二端(例如源极)以及控制端(例如闸极)。晶体管MF的第一端耦接参考电压源VC3,晶体管MF的第二端产生比较电压VCMOP2。晶体管MB4的第一端耦接晶体管MF的第二端,晶体管MB4的第二端与控制端共同耦接至晶体管MF的控制端。在另一实施例中,晶体管MB4可以用二极管取代,二极管的阳极耦接至晶体管MF的第二端,二极管的阴极则耦接至晶体管MF的控制端。二极管可用来产生参考电流。FIG. 7 is a schematic diagram of a touch detection circuit 700 according to another embodiment of the present invention. The touch detection circuit 700 includes a touch unit 702 , a comparison unit 704 and a touch result generation unit 706 . The touch unit 702 includes a transistor MD4 , a transistor MC2 , a photodetector transistor P6 and a photodetector transistor P7 . The comparison unit 704 includes a transistor MF, a transistor MB4 and a transistor M5. In this embodiment, the transistor MF, the transistor MB4 and the transistor M5 are N-type TFTs. The transistor MF has a first terminal (such as a drain), a second terminal (such as a source) and a control terminal (such as a gate). A first terminal of the transistor MF is coupled to a reference voltage source VC3, and a second terminal of the transistor MF generates a comparison voltage VCMOP2. The first terminal of the transistor MB4 is coupled to the second terminal of the transistor MF, and the second terminal of the transistor MB4 and the control terminal are jointly coupled to the control terminal of the transistor MF. In another embodiment, the transistor MB4 can be replaced by a diode, the anode of the diode is coupled to the second terminal of the transistor MF, and the cathode of the diode is coupled to the control terminal of the transistor MF. A diode can be used to generate a reference current.
晶体管M5具有第一端(例如汲极)、第二端(例如源极)以及控制端(例如闸极)。晶体管M5的第一端耦接晶体管MB4的第二端,晶体管M5的控制端接收侦测信号SD6,晶体管M5的第二端耦接参考电压T2。晶体管MF依据侦测信号SD6与参考电压T2两者的电压差来产生触控状态电流IT2。请同时参考图6与图7,值得注意的是,将比较单元704与比较单元604相比,比较单元704中增加了晶体管MF。晶体管MF可限制流向晶体管MC2与光侦测晶体管P7的电流大小,可限制触控侦测电路700消耗的工作电流。The transistor M5 has a first terminal (such as a drain), a second terminal (such as a source) and a control terminal (such as a gate). The first terminal of the transistor M5 is coupled to the second terminal of the transistor MB4, the control terminal of the transistor M5 receives the detection signal SD6, and the second terminal of the transistor M5 is coupled to the reference voltage T2. The transistor MF generates the touch state current IT2 according to the voltage difference between the detection signal SD6 and the reference voltage T2 . Please refer to FIG. 6 and FIG. 7 at the same time. It is worth noting that, comparing the comparison unit 704 with the comparison unit 604 , a transistor MF is added in the comparison unit 704 . The transistor MF can limit the magnitude of the current flowing to the transistor MC2 and the light detection transistor P7, and can limit the operating current consumed by the touch detection circuit 700 .
图8绘示本发明另一实施例的触控侦测电路800的示意图。触控侦测电路800可适用于电容式触控面板。触控侦测电路800包括触控单元802、比较单元804以及触控结果产生单元806。触控单元802包括触控侦测电容CT与参考电容CR。触控侦测电容CT的第一端接收侦测信号SD7,触控侦测电容CT的第二端则用来提供侦测信号SD7。参考电容CR串接在触控侦测电容CT的第二端以及参考接地端GND间。触控结果产生单元806可以是模拟数字转换器。在此实施例中,触控结果产生单元806可藉由端点VA3的电压变化来得知触碰面板的触碰情况。FIG. 8 is a schematic diagram of a touch detection circuit 800 according to another embodiment of the present invention. The touch detection circuit 800 is applicable to a capacitive touch panel. The touch detection circuit 800 includes a touch unit 802 , a comparison unit 804 and a touch result generation unit 806 . The touch unit 802 includes a touch detection capacitor CT and a reference capacitor CR. The first end of the touch detection capacitor CT receives the detection signal SD7, and the second end of the touch detection capacitor CT is used to provide the detection signal SD7. The reference capacitor CR is connected in series between the second terminal of the touch detection capacitor CT and the reference ground terminal GND. The touch result generating unit 806 may be an analog-to-digital converter. In this embodiment, the touch result generating unit 806 can know the touch condition of the touch panel according to the voltage change of the terminal VA3 .
综上所述,本发明的触控侦测电路会利用触控单元依据触控面板不同的触控状态提供不同的侦测信号。接着,比较单元接收到侦测信号后,会将侦测信号与参考电压相比以产生比较电压。最后,触控结果产生单元会将比较电压的信号进行放大并提供触控结果信号。如此一来,本发明的触控侦测电路便可依据触控结果信号来得知触控面板的触控情况。换句话说,本发明的触控侦测电路藉由分析触控面板在不同的触控状态下所产生的电压差来判断目前触控面板的触碰情形,用以提升侦测的敏感度。因此,本发明的触控侦测电路可节省光侦测晶体管所需要的光照时间,以增加侦测速度与敏感性。To sum up, the touch detection circuit of the present invention utilizes the touch unit to provide different detection signals according to different touch states of the touch panel. Then, after receiving the detection signal, the comparison unit compares the detection signal with the reference voltage to generate a comparison voltage. Finally, the touch result generating unit amplifies the signal of the comparison voltage and provides a touch result signal. In this way, the touch detection circuit of the present invention can know the touch condition of the touch panel according to the touch result signal. In other words, the touch detection circuit of the present invention judges the current touch situation of the touch panel by analyzing the voltage difference generated by the touch panel under different touch states, so as to improve the detection sensitivity. Therefore, the touch detection circuit of the present invention can save the illumination time required by the light detection transistor, so as to increase the detection speed and sensitivity.
当然,本发明还可有其它多种实施例,在不背离本发明精神及其实质的情况下,熟悉本领域的技术人员当可根据本发明作出各种相应的改变和变形,但这些相应的改变和变形都应属于本发明所附的权利要求的保护范围。Certainly, the present invention also can have other multiple embodiments, without departing from the spirit and essence of the present invention, those skilled in the art can make various corresponding changes and deformations according to the present invention, but these corresponding Changes and deformations should all belong to the protection scope of the appended claims of the present invention.
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