CN104101810A - Detection circuit based on LED unit and detector - Google Patents
Detection circuit based on LED unit and detector Download PDFInfo
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- CN104101810A CN104101810A CN201310127738.XA CN201310127738A CN104101810A CN 104101810 A CN104101810 A CN 104101810A CN 201310127738 A CN201310127738 A CN 201310127738A CN 104101810 A CN104101810 A CN 104101810A
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Abstract
The invention is suitable for the field of circuit and especially relates to a detection circuit based on an LED unit and a detector. When a power switch circuit controls a main switch (a switch K1) to be closed, a square wave circuit generates square wave signals, a D trigger chip U2 controls breakover of a first switch tube, a second switch tube, a third switch tube and a fourth switch tube according to square wave number of the square wave signals generated by the square wave circuit, and each photosensitive diode circuit in a welding circuit of the LED unit is detected. Thus, welding quality of each photosensitive diode circuit is guaranteed, quality detection efficiency is high, and manpower and material resources are saved.
Description
Technical field
The invention belongs to circuit field, relate in particular to a kind of testing circuit and detecting device based on LED group.
Background technology
Along with scientific and technical development, LED light fixture, as novel, environmental protection, energy-saving lamp that volume is little, is widely used and is applied to every field; Especially, along with the raising of quality of life, light fixture is as a kind of environmental decoration product and welcome, and therefore, people are also more and more higher to the quality requirements of LED group; The detection mode of the quality of existing detection LED group, also rests on and uses multimeter to detect, and detection efficiency is low, wastes a large amount of manpower and materials, and easy flase drop.
Summary of the invention
The object of the present invention is to provide a kind of testing circuit based on LED group, aim to provide a kind of circuit that the LED group circuit welding is carried out to Intelligent Measurement.
The present invention is achieved in that a kind of testing circuit based on LED group, and the input end of the described testing circuit based on LED group and output terminal connect respectively the welding circuit of power circuit and LED group, and the described testing circuit based on LED group comprises:
Power switch circuit, circuit and square-wave, divider resistance R5, divider resistance R6, divider resistance R7, divider resistance R8, divider resistance R9, divider resistance R11, shunt resistance R16, shunt resistance R17, shunt resistance R18, shunt resistance R19, K switch 2, filter capacitor C3, filter capacitor C4, the first switching tube, second switch pipe, the 3rd switching tube, the 4th switching tube and D flip chip U2;
Described power switch circuit connects respectively described power circuit and described circuit and square-wave, the first end of described divider resistance R11 and the second end connect respectively the first end of described power switch circuit and described K switch 2, described divider resistance R9 is connected between second end and ground of described K switch 2, the reset pin RESET of D flip chip U2 described in the second termination of described K switch 2, the first end of described divider resistance R5 and the second end meet respectively the triggering pin CLK of described circuit and square-wave and described D flip chip U2, described divider resistance R6, filter capacitor C3 is connected between the triggering pin CLK and ground of described D flip chip U2 respectively, described filter capacitor C4 is connected between the first end and ground of described divider resistance R11, described divider resistance R7 is connected between the replacement pin EN and ground of described D flip chip U2, described divider resistance R8 is connected between the carry pin COUT and replacement pin EN of described D flip chip U2, the power pins VDD of described D flip chip U2 connects described power switch circuit, the grounding pin VSS ground connection of described D flip chip U2, described shunt resistance R16 is connected between the first output pin Q0 and the control end of described the first switching tube of described D flip chip U2, described shunt resistance R17 is connected between the second output pin Q1 and the control end of described second switch pipe of described D flip chip U2, described shunt resistance R18 is connected between the 3rd output pin Q2 and the control end of described the 3rd switching tube of described D flip chip U2, described shunt resistance R19 is connected between the 4th output pin Q3 and the control end of described the 4th switching tube of described D flip chip U2, the low-voltage end of described the first switching tube, the low-voltage end of described second switch pipe, the low-voltage end of described the 3rd switching tube, the equal ground connection of low-voltage end of described the 4th switching tube, the high voltage end of described the first switching tube, the high voltage end of described second switch pipe, the high voltage end of described the 3rd switching tube, the high voltage end of described the 4th switching tube all connects the welding circuit of described LED group.
The present invention also provides a kind of detecting device, described detecting device comprises power circuit and the testing circuit based on LED group, the input end of the described testing circuit based on LED group and output terminal connect respectively the welding circuit of described power circuit and LED group, and the described testing circuit based on LED group comprises:
Power switch circuit, circuit and square-wave, divider resistance R5, divider resistance R6, divider resistance R7, divider resistance R8, divider resistance R9, divider resistance R11, shunt resistance R16, shunt resistance R17, shunt resistance R18, shunt resistance R19, K switch 2, filter capacitor C3, filter capacitor C4, the first switching tube, second switch pipe, the 3rd switching tube, the 4th switching tube and D flip chip U2;
Described power switch circuit connects respectively described power circuit and described circuit and square-wave, the first end of described divider resistance R11 and the second end connect respectively the first end of described power switch circuit and described K switch 2, described divider resistance R9 is connected between second end and ground of described K switch 2, the reset pin RESET of D flip chip U2 described in the second termination of described K switch 2, the first end of described divider resistance R5 and the second end meet respectively the triggering pin CLK of described circuit and square-wave and described D flip chip U2, described divider resistance R6, filter capacitor C3 is connected between the triggering pin CLK and ground of described D flip chip U2 respectively, described filter capacitor C4 is connected between the first end and ground of described divider resistance R11, described divider resistance R7 is connected between the replacement pin EN and ground of described D flip chip U2, described divider resistance R8 is connected between the carry pin COUT and replacement pin EN of described D flip chip U2, the power pins VDD of described D flip chip U2 connects described power switch circuit, the grounding pin VSS ground connection of described D flip chip U2, described shunt resistance R16 is connected between the first output pin Q0 and the control end of described the first switching tube of described D flip chip U2, described shunt resistance R17 is connected between the second output pin Q1 and the control end of described second switch pipe of described D flip chip U2, described shunt resistance R18 is connected between the 3rd output pin Q2 and the control end of described the 3rd switching tube of described D flip chip U2, described shunt resistance R19 is connected between the 4th output pin Q3 and the control end of described the 4th switching tube of described D flip chip U2, the low-voltage end of described the first switching tube, the low-voltage end of described second switch pipe, the low-voltage end of described the 3rd switching tube, the equal ground connection of low-voltage end of described the 4th switching tube, the high voltage end of described the first switching tube, the high voltage end of described second switch pipe, the high voltage end of described the 3rd switching tube, the high voltage end of described the 4th switching tube all connects the welding circuit of described LED group.
In the present invention, in the time that power switch circuit control master switch (K switch 1) is closed, circuit and square-wave produces square-wave signal, the square wave number of the square-wave signal that D flip chip U2 produces according to circuit and square-wave, control the conducting of the first switching tube, second switch pipe, the 3rd switching tube, the 4th switching tube, detect each photodiode circuit in the welding circuit of LED group, ensured the welding quality of each photodiode circuit, quality testing efficiency is high, and has saved human and material resources.
Brief description of the drawings
Fig. 1 is the circuit structure diagram of the testing circuit based on LED group that provides of the embodiment of the present invention;
Fig. 2 is the circuit diagram of the testing circuit based on LED group that provides of the embodiment of the present invention;
Fig. 3 is the circuit diagram of the testing circuit based on LED group that provides of another embodiment of the present invention;
Fig. 4 is the process flow diagram of the detection method of the testing circuit based on LED group that provides of the embodiment of the present invention.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not intended to limit the present invention.
Fig. 1 shows the structure of the testing circuit based on LED group that the embodiment of the present invention provides, and for convenience of explanation, only shows the part relevant to the embodiment of the present invention, and details are as follows.
Based on a testing circuit for LED group, the input end of the described testing circuit based on LED group and output terminal connect respectively the welding circuit of power circuit and LED group, and the described testing circuit based on LED group comprises:
Power switch circuit 1, circuit and square-wave 2, divider resistance R5, divider resistance R6, divider resistance R7, divider resistance R8, divider resistance R9, divider resistance R11, shunt resistance R16, shunt resistance R17, shunt resistance R18, shunt resistance R19, K switch 2, filter capacitor C3, filter capacitor C4, the first switching tube 31, second switch pipe 32, the 3rd switching tube 33, the 4th switching tube 34 and D flip chip U2;
Described power switch circuit 1 connects respectively described power circuit and described circuit and square-wave 2, the first end of described divider resistance R11 and the second end connect respectively the first end of described power switch circuit 1 and described K switch 2, described divider resistance R9 is connected between second end and ground of described K switch 2, the reset pin RESET of D flip chip U2 described in the second termination of described K switch 2, the first end of described divider resistance R5 and the second end meet respectively the triggering pin CLK of described circuit and square-wave 2 and described D flip chip U2, described divider resistance R6, filter capacitor C3 is connected between the triggering pin CLK and ground of described D flip chip U2 respectively, described filter capacitor C4 is connected between the first end and ground of described divider resistance R11, described divider resistance R7 is connected between the replacement pin EN and ground of described D flip chip U2, described divider resistance R8 is connected between the carry pin COUT and replacement pin EN of described D flip chip U2, the power pins VDD of described D flip chip U2 connects described power switch circuit 1, the grounding pin VSS ground connection of described D flip chip U2, described shunt resistance R16 is connected between the first output pin Q0 and the control end of described the first switching tube 31 of described D flip chip U2, described shunt resistance R17 is connected between the second output pin Q1 and the control end of described second switch pipe 32 of described D flip chip U2, described shunt resistance R18 is connected between the 3rd output pin Q2 and the control end of described the 3rd switching tube 33 of described D flip chip U2, described shunt resistance R19 is connected between the 4th output pin Q3 and the control end of described the 4th switching tube 34 of described D flip chip U2, the low-voltage end of described the first switching tube 31, the low-voltage end of described second switch pipe 32, the low-voltage end of described the 3rd switching tube 33, the equal ground connection of low-voltage end of described the 4th switching tube 34, the high voltage end of described the first switching tube 31, the high voltage end of described second switch pipe 32, the high voltage end of described the 3rd switching tube 33, the high voltage end of described the 4th switching tube 34 all connects the welding circuit of described LED group.
Fig. 2 shows the physical circuit of the testing circuit based on LED group that the embodiment of the present invention provides, and for convenience of explanation, only shows the part relevant to the embodiment of the present invention, and details are as follows.
As one embodiment of the invention, described power switch circuit 1 comprises:
Diode D1, rechargeable battery BT, K switch 1, filter capacitor C1, divider resistance R10 and photodiode LED5;
The anode of described diode D1 and negative electrode connect respectively the positive pole of described power circuit and described rechargeable battery BT, the negative pole of described rechargeable battery BT is ground connection and described power circuit respectively, the positive pole of rechargeable battery BT described in the first termination of described K switch 1, described filter capacitor C1 is connected between second end and ground of described K switch 1, described divider resistance R10 is connected to the second end of described K switch 1 and the anode of described photodiode LED5, the plus earth of described photodiode LED5, the second end of described K switch 1 connects respectively the first end of described circuit and square-wave 2 and described divider resistance R11.
As one embodiment of the invention, described circuit and square-wave 2 comprises:
Divider resistance R3, divider resistance R4, feedback resistance R1, feedback resistance R2, operation amplifier chip U1 and polar capacitor C2;
Described divider resistance R3 is connected between the second end of described K switch 1 and the anodal input pin VI+ of described operation amplifier chip U1, described divider resistance R4 is connected between the anodal input pin VI+ and ground of described operation amplifier chip U1, described feedback resistance R1 is connected between the output pin VOUT and anodal input pin VI+ of described operation amplifier chip U1, described feedback resistance R2 is connected between the output pin VOUT and negative pole input pin VI-of described operation amplifier chip U1, the positive pole of described polar capacitor C2 and negative pole connect respectively negative pole input pin VI-and the ground of described operation amplifier chip U1, the output pin VOUT of described operation amplifier chip U1 connects the first end of described divider resistance R5.
As one embodiment of the invention, described the first switching tube 31 adopts NPN type triode Q1, and collector, base stage, the emitter of described NPN type triode Q1 are respectively high voltage end, control end, the low-voltage end of described the first switching tube 31;
As one embodiment of the invention, described second switch pipe 32 adopts NPN type triode Q2, and collector, base stage, the emitter of described NPN type triode Q2 are respectively high voltage end, control end, the low-voltage end of described second switch pipe 32;
As one embodiment of the invention, described the 3rd switching tube 33 adopts NPN type triode Q3, and collector, base stage, the emitter of described NPN type triode Q3 are respectively high voltage end, control end, the low-voltage end of described the 3rd switching tube 33;
As one embodiment of the invention, described the 4th switching tube 34 adopts NPN type triode Q4, and collector, base stage, the emitter of described NPN type triode Q4 are respectively high voltage end, control end, the low-voltage end of described the 4th switching tube 34.
Fig. 3 shows the physical circuit of the testing circuit based on LED group that the embodiment of the present invention provides, and for convenience of explanation, only shows the part relevant to the embodiment of the present invention, and details are as follows.
As another embodiment of the present invention, described the first switching tube 31 adopts N-type metal-oxide-semiconductor Q5, and drain electrode, grid, the source electrode of described N-type metal-oxide-semiconductor Q5 are respectively hot end, control end, the cold end of described the first switching tube 31;
As another embodiment of the present invention, described second switch pipe 32 adopts N-type metal-oxide-semiconductor Q6, and drain electrode, grid, the source electrode of described N-type metal-oxide-semiconductor Q6 are respectively hot end, control end, the cold end of described second switch pipe 32;
As another embodiment of the present invention, described the 3rd switching tube 33 adopts N-type metal-oxide-semiconductor Q7, and drain electrode, grid, the source electrode of described N-type metal-oxide-semiconductor Q7 are respectively hot end, control end, the cold end of described the 3rd switching tube 33;
As another embodiment of the present invention, described the 4th switching tube 34 adopts N-type metal-oxide-semiconductor Q8, and drain electrode, grid, the source electrode of described N-type metal-oxide-semiconductor Q8 are respectively hot end, control end, the cold end of described the 4th switching tube 34.
As another embodiment of the present invention, the present invention also provides a kind of detecting device, described detecting device comprises power circuit and the testing circuit based on LED group, the input end of the described testing circuit based on LED group and output terminal connect respectively the welding circuit of described power circuit and LED group, and the described testing circuit based on LED group comprises:
Power switch circuit 1, circuit and square-wave 2, divider resistance R5, divider resistance R6, divider resistance R7, divider resistance R8, divider resistance R9, divider resistance R11, shunt resistance R16, shunt resistance R17, shunt resistance R18, shunt resistance R19, K switch 2, filter capacitor C3, filter capacitor C4, the first switching tube 31, second switch pipe 32, the 3rd switching tube 33, the 4th switching tube 34 and D flip chip U2;
Described power switch circuit 1 connects respectively described power circuit and described circuit and square-wave 2, the first end of described divider resistance R11 and the second end connect respectively the first end of described power switch circuit 1 and described K switch 2, described divider resistance R9 is connected between second end and ground of described K switch 2, the reset pin RESET of D flip chip U2 described in the second termination of described K switch 2, the first end of described divider resistance R5 and the second end meet respectively the triggering pin CLK of described circuit and square-wave 2 and described D flip chip U2, described divider resistance R6, filter capacitor C3 is connected between the triggering pin CLK and ground of described D flip chip U2 respectively, described filter capacitor C4 is connected between the first end and ground of described divider resistance R11, described divider resistance R7 is connected between the replacement pin EN and ground of described D flip chip U2, described divider resistance R8 is connected between the carry pin COUT and replacement pin EN of described D flip chip U2, the power pins VDD of described D flip chip U2 connects described power switch circuit 1, the grounding pin VSS ground connection of described D flip chip U2, described shunt resistance R16 is connected between the first output pin Q0 and the control end of described the first switching tube 31 of described D flip chip U2, described shunt resistance R17 is connected between the second output pin Q1 and the control end of described second switch pipe 32 of described D flip chip U2, described shunt resistance R18 is connected between the 3rd output pin Q2 and the control end of described the 3rd switching tube 33 of described D flip chip U2, described shunt resistance R19 is connected between the 4th output pin Q3 and the control end of described the 4th switching tube 34 of described D flip chip U2, the low-voltage end of described the first switching tube 31, the low-voltage end of described second switch pipe 32, the low-voltage end of described the 3rd switching tube 33, the equal ground connection of low-voltage end of described the 4th switching tube 34, the high voltage end of described the first switching tube 31, the high voltage end of described second switch pipe 32, the high voltage end of described the 3rd switching tube 33, the high voltage end of described the 4th switching tube 34 all connects the welding circuit of described LED group.
As another embodiment of the present invention, described power switch circuit 1 comprises:
Diode D1, rechargeable battery BT, K switch 1, filter capacitor C1, divider resistance R10 and photodiode LED5;
The anode of described diode D1 and negative electrode connect respectively the positive pole of described power circuit and described rechargeable battery BT, the negative pole of described rechargeable battery BT is ground connection and described power circuit respectively, the positive pole of rechargeable battery BT described in the first termination of described K switch 1, described filter capacitor C1 is connected between second end and ground of described K switch 1, described divider resistance R10 is connected to the second end of described K switch 1 and the anode of described photodiode LED5, the plus earth of described photodiode LED5, the second end of described K switch 1 connects respectively the first end of described circuit and square-wave 2 and described divider resistance R11.
As another embodiment of the present invention, described circuit and square-wave 2 comprises:
Divider resistance R3, divider resistance R4, feedback resistance R1, feedback resistance R2, operation amplifier chip U1 and polar capacitor C2;
Described divider resistance R3 is connected between the second end of described K switch 1 and the anodal input pin VI+ of described operation amplifier chip U1, described divider resistance R4 is connected between the anodal input pin VI+ and ground of described operation amplifier chip U1, described feedback resistance R1 is connected between the output pin VOUT and anodal input pin VI+ of described operation amplifier chip U1, described feedback resistance R2 is connected between the output pin VOUT and negative pole input pin VI-of described operation amplifier chip U1, the positive pole of described polar capacitor C2 and negative pole connect respectively negative pole input pin VI-and the ground of described operation amplifier chip U1, the output pin VOUT of described operation amplifier chip U1 connects the first end of described divider resistance R5.
As another embodiment of the present invention, described the first switching tube 31 adopts NPN type triode Q1, and collector, base stage, the emitter of described NPN type triode Q1 are respectively high voltage end, control end, the low-voltage end of described the first switching tube 31;
As another embodiment of the present invention, described second switch pipe 32 adopts NPN type triode Q2, and collector, base stage, the emitter of described NPN type triode Q2 are respectively high voltage end, control end, the low-voltage end of described second switch pipe 32;
As another embodiment of the present invention, described the 3rd switching tube 33 adopts NPN type triode Q3, and collector, base stage, the emitter of described NPN type triode Q3 are respectively high voltage end, control end, the low-voltage end of described the 3rd switching tube 33;
As another embodiment of the present invention, described the 4th switching tube 34 adopts NPN type triode Q4, and collector, base stage, the emitter of described NPN type triode Q4 are respectively high voltage end, control end, the low-voltage end of described the 4th switching tube 34.
As another embodiment of the present invention, described the first switching tube 31 adopts N-type metal-oxide-semiconductor Q5, and drain electrode, grid, the source electrode of described N-type metal-oxide-semiconductor Q5 are respectively hot end, control end, the cold end of described the first switching tube 31;
As another embodiment of the present invention, described second switch pipe 32 adopts N-type metal-oxide-semiconductor Q6, and drain electrode, grid, the source electrode of described N-type metal-oxide-semiconductor Q6 are respectively hot end, control end, the cold end of described second switch pipe 32;
As another embodiment of the present invention, described the 3rd switching tube 33 adopts N-type metal-oxide-semiconductor Q7, and drain electrode, grid, the source electrode of described N-type metal-oxide-semiconductor Q7 are respectively hot end, control end, the cold end of described the 3rd switching tube 33;
As another embodiment of the present invention, described the 4th switching tube 34 adopts N-type metal-oxide-semiconductor Q8, and drain electrode, grid, the source electrode of described N-type metal-oxide-semiconductor Q8 are respectively hot end, control end, the cold end of described the 4th switching tube 34.
In order to explain better the present invention, adopt operation amplifier chip LM258, D flip chip U2 to adopt D flip chip CD4017 as example taking operation amplifier chip U1, in conjunction with Fig. 2, the principle of work of the testing circuit based on LED group is described:
Power switch circuit 1 provides a master switch (K switch 1), and whether the testing circuit by this master switch control based on LED group works; Particularly, in the time that K switch 1 disconnects, circuit and square-wave 2 and D flip chip U2 do not have Power supply, quit work, do not have supply voltage to power to photodiode LED5 through divider resistance R10, therefore, do not light as the photodiode LED5 of power light simultaneously yet, in the time that K switch 1 is closed, light as the photodiode LED5 of power light.
In addition, for the testing circuit that keeps organizing based on LED continues normal work, when the present invention adopts rechargeable battery BT to power to the testing circuit based on LED group, go back external power supply circuit; Power circuit can, to rechargeable battery BT charging, also can directly be powered to the testing circuit based on LED group; More optimizedly; for prevent the high level output pin of power circuit and low level output pin respectively with negative pole and the anodal incorrect link of rechargeable battery; damage rechargeable battery; the invention provides diode D1; ensure that the high level output pin of power circuit connects the positive pole of rechargeable battery by diode D1, realize the protection to rechargeable battery BT.
In the time of K switch 1 first closure, the high level of the second end of K switch 1 is after divider resistance R3 and divider resistance R4 dividing potential drop, anodal input pin VI+ to operation amplifier chip LM258 provides the divider resistance R4 voltage at two ends, at this moment, the negative pole input pin VI-of operation amplifier chip LM258 is low level, the output pin VOUT output high level signal of operation amplifier chip LM258, the output pin VOUT of operation amplifier chip LM258 charges to polar capacitor C2 by feedback resistance R2, the negative pole input pin VI-of operation amplifier chip LM258 is charged to the high voltage of the output pin VOUT output of operation amplifier chip LM258, simultaneously, the output pin VOUT of operation amplifier chip LM258 is through feedback resistance R1 and divider resistance R4 dividing potential drop, therefore, the voltage of the anodal input pin VI+ of operation amplifier chip LM258 is lower than the voltage of the negative pole input pin VI-of operation amplifier chip LM258, thereby, the output pin VOUT output low level signal of operation amplifier chip LM258, at this moment, polar capacitor C2 is through feedback resistance R2 electric discharge, until the voltage at divider resistance R4 two ends is higher than the voltage at polar capacitor C2 two ends, the output pin VOUT output high level signal of operation amplifier chip LM258, by that analogy, this circuit and square-wave 2 continues to produce square-wave signal.
In the present embodiment, the welding circuit 4 of described LED group comprises: divider resistance R17, divider resistance R18, divider resistance R19, photodiode LED1, photodiode LED2, photodiode LED3, photodiode LED4, test point 41, test point 42, test point 43, test point 44, pad 45; Wherein, divider resistance R17 is connected between power supply VCC1 and the anode of photodiode LED1, divider resistance R18 is connected between power supply VCC1 and the anode of photodiode LED2, divider resistance R19 is connected between power supply VCC1 and the anode of photodiode LED3, and the anode of described photodiode LED4 and negative electrode connect respectively between pad 45 and ground.Detect successively as example taking the test point 41 to welding on pcb board, test point 42, test point 43, test point 44 below, details are as follows:
The collector of the collector of the collector of the collector of NPN type triode Q1, NPN type triode Q2, NPN type triode Q3, NPN type triode Q4 is connect respectively to test point 41, test point 42, test point 43, test point 44.
This circuit and square-wave 2 sends square-wave signal through divider resistance R5 to the triggering pin CLK of D flip chip CD4017, and in the time that the triggering pin CLK of D flip chip CD4017 receives the rising edge of this square-wave signal, D flip chip CD4017 adds 1 by count value; In the time that count value is followed successively by 1,2,3,4, the first output pin Q0, the second output pin Q1 of D flip chip CD4017, the 3rd output pin Q2, the 4th output pin Q3 export high level successively one by one, thereby, NPN type triode Q1, NPN type triode Q2, NPN type triode Q3, NPN type triode Q4 conducting one by one successively, test respectively test point 41, test point 42, test point 43, test point 44 one by one; In the time that photodiode LED1 does not work, there is the situations such as wrong weldering, rosin joint in the photodiode LED1 not working, and similarly, in the time that photodiode LED2, photodiode LED3 are detected, situation about not working if occur, exists the situations such as wrong weldering, rosin joint too; In the time existing two and above photodiode to light in photodiode LED1, photodiode LED2, photodiode LED3, the wrong photodiode of lighting exists and connects weldering simultaneously; In the time that test point 44 is detected, if photodiode LED4 lights, represent that photodiode LED4 exists the situation that connects weldering, if photodiode LED4 does not light, photodiode LED4 welding is normal.
Preferably, before the welding circuit 4 of LED group is detected, Closing Switch K2 in advance, by the circuit of divider resistance R11, K switch 2, divider resistance R9 composition, reset pin RESET to D flip chip CD4017 provides high level signal, and D flip chip CD4017 sets to 0 count value.
Preferably, when D flip chip CD4017 by count value reach pre-set count values (this pre-set count values be user as required, the parameter configuration of D flip chip CD4017 presets, in the present embodiment, this pre-set count values is set to 10) time, the carry pin COUT output high level of D flip chip CD4017, thereby the voltage at divider resistance R7 two ends is set to high level, D flip chip CD4017 sets to 0 count value.
Fig. 4 is the process flow diagram of the detection method of the testing circuit based on LED group that provides of the embodiment of the present invention, for convenience of description, only shows the part relevant to the embodiment of the present invention.
Adopt operation amplifier chip LM258, D flip chip U2 to adopt D flip chip CD4017 as example taking operation amplifier chip U1, the testing circuit based on LED group providing in conjunction with Fig. 2, describes in detail the detection method of the testing circuit based on LED group, specific as follows:
Step S101, power switch circuit is to circuit and square-wave and control circuit power supply.
Described control circuit comprises: divider resistance R5, divider resistance R6, divider resistance R7, divider resistance R8, divider resistance R9, divider resistance R11, shunt resistance R16, shunt resistance R17, shunt resistance R18, shunt resistance R19, K switch 2, filter capacitor C3, filter capacitor C4, NPN type triode Q1, NPN type triode Q2, NPN type triode Q3, NPN type triode Q4 and D flip chip CD4017, the first end of described divider resistance R11 and the second end connect respectively the first end of described power switch circuit and described K switch 2, described divider resistance R9 is connected between second end and ground of described K switch 2, the reset pin RESET of D flip chip CD4017 described in the second termination of described K switch 2, the first end of described divider resistance R5 and the second end meet respectively the triggering pin CLK of described circuit and square-wave and described D flip chip CD4017, described divider resistance R6, filter capacitor C3 is connected between the triggering pin CLK and ground of described D flip chip CD4017 respectively, described filter capacitor C4 is connected between the first end and ground of described divider resistance R11, described divider resistance R7 is connected between the replacement pin EN and ground of described D flip chip CD4017, described divider resistance R8 is connected between the carry pin COUT and replacement pin EN of described D flip chip CD4017, the power pins VDD of described D flip chip CD4017 connects described power switch circuit, the grounding pin VSS ground connection of described D flip chip CD4017, described shunt resistance R16 is connected between the first output pin Q0 of described D flip chip CD4017 and the base stage of described NPN type triode Q1, described shunt resistance R17 is connected between the second output pin Q1 of described D flip chip CD4017 and the base stage of described NPN type triode Q2, described shunt resistance R18 is connected between the 3rd output pin Q2 of described D flip chip CD4017 and the base stage of described NPN type triode Q3, described shunt resistance R19 is connected between the 4th output pin Q3 of described D flip chip CD4017 and the base stage of described NPN type triode Q4, the emitter of described NPN type triode Q1, the emitter of described NPN type triode Q2, the emitter of described NPN type triode Q3, the equal ground connection of emitter of described NPN type triode Q4, the collector of described NPN type triode Q1, the collector of described NPN type triode Q2, the collector of described NPN type triode Q3, the collector of described NPN type triode Q4 all connects the welding circuit of described LED group.
Power switch circuit provides a master switch (K switch 1), and whether the testing circuit by this master switch control based on LED group works; Particularly, in the time that K switch 1 disconnects, circuit and square-wave and control circuit do not have Power supply, quit work, do not have supply voltage to power to photodiode LED5 through divider resistance R10, therefore, do not light as the photodiode LED5 of power light simultaneously yet, in the time that K switch 1 is closed, light as the photodiode LED5 of power light.
Step S102, circuit and square-wave produces square-wave signal.
In the time of K switch 1 first closure, the high level of the second end of K switch 1 is after divider resistance R3 and divider resistance R4 dividing potential drop, anodal input pin VI+ to operation amplifier chip LM258 provides the divider resistance R4 voltage at two ends, at this moment, the negative pole input pin VI-of operation amplifier chip LM258 is low level, the output pin VOUT output high level signal of operation amplifier chip LM258, the output pin VOUT of operation amplifier chip LM258 charges to polar capacitor C2 by feedback resistance R2, the negative pole input pin VI-of operation amplifier chip LM258 is charged to the high voltage of the output pin VOUT output of operation amplifier chip LM258, simultaneously, the output pin VOUT of operation amplifier chip LM258 is through feedback resistance R1 and divider resistance R4 dividing potential drop, therefore, the voltage of the anodal input pin VI+ of operation amplifier chip LM258 is lower than the voltage of the negative pole input pin VI-of operation amplifier chip LM258, thereby, the output pin VOUT output low level signal of operation amplifier chip LM258, at this moment, polar capacitor C2 is through feedback resistance R2 electric discharge, until the voltage at divider resistance R4 two ends is higher than the voltage at polar capacitor C2 two ends, the output pin VOUT output high level signal of operation amplifier chip LM258, by that analogy, this circuit and square-wave continues to produce square-wave signal.
Step S103, the square wave number of the square-wave signal that control circuit produces according to circuit and square-wave, controls the welding circuit of LED group is carried out to fault detect.
In the present embodiment, detect successively as example taking the test point 41 to welding on pcb board, test point 42, test point 43, test point 44, details are as follows:
This circuit and square-wave sends square-wave signal through divider resistance R5 to the triggering pin CLK of D flip chip CD4017, and in the time that the triggering pin CLK of D flip chip CD4017 receives the rising edge of this square-wave signal, D flip chip CD4017 adds 1 by count value; In the time that count value is followed successively by 1,2,3,4, the first output pin Q0, the second output pin Q1 of D flip chip CD4017, the 3rd output pin Q2, the 4th output pin Q3 export high level successively one by one, thereby, NPN type triode Q1, NPN type triode Q2, NPN type triode Q3, NPN type triode Q4 conducting one by one successively, test respectively test point 41, test point 42, test point 43, test point 44 one by one; In the time that photodiode LED1 does not work, there is the situations such as wrong weldering, rosin joint in the photodiode LED1 not working, and similarly, in the time that photodiode LED2, photodiode LED3 are detected, situation about not working if occur, exists the situations such as wrong weldering, rosin joint too; In the time existing two and above photodiode to light in photodiode LED1, photodiode LED2, photodiode LED3, the wrong photodiode of lighting exists and connects weldering simultaneously; In the time that test point 44 is detected, if photodiode LED4 lights, represent that photodiode LED4 exists the situation that connects weldering, if photodiode LED4 does not light, photodiode LED4 welding is normal.
Preferably, before the welding circuit of LED group being detected by control circuit, Closing Switch K2 in advance, by the circuit of divider resistance R11, K switch 2, divider resistance R9 composition, reset pin RESET to D flip chip CD4017 provides high level signal, and D flip chip CD4017 sets to 0 count value.
Preferably, when D flip chip CD4017 by count value reach pre-set count values (this pre-set count values be user as required, the actual permission situation of D flip chip CD4017 presets, in the present embodiment, this pre-set count values is set to 10) time, the carry pin COUT output high level of D flip chip CD4017, thereby the voltage at divider resistance R7 two ends is set to high level, D flip chip CD4017 sets to 0 count value.
In embodiments of the present invention, in the time that power switch circuit control master switch (K switch 1) is closed, circuit and square-wave produces square-wave signal, the square wave number of the square-wave signal that D flip chip U2 produces according to circuit and square-wave, control the conducting of the first switching tube, second switch pipe, the 3rd switching tube, the 4th switching tube, detect each photodiode circuit in the welding circuit of LED group, ensured the welding quality of each photodiode circuit, quality testing efficiency is high, and has saved human and material resources.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. the testing circuit based on LED group, the input end of the described testing circuit based on LED group and output terminal connect respectively the welding circuit of power circuit and LED group, it is characterized in that, and the described testing circuit based on LED group comprises:
Power switch circuit, circuit and square-wave, divider resistance R5, divider resistance R6, divider resistance R7, divider resistance R8, divider resistance R9, divider resistance R11, shunt resistance R16, shunt resistance R17, shunt resistance R18, shunt resistance R19, K switch 2, filter capacitor C3, filter capacitor C4, the first switching tube, second switch pipe, the 3rd switching tube, the 4th switching tube and D flip chip U2;
Described power switch circuit connects respectively described power circuit and described circuit and square-wave, the first end of described divider resistance R11 and the second end connect respectively the first end of described power switch circuit and described K switch 2, described divider resistance R9 is connected between second end and ground of described K switch 2, the reset pin RESET of D flip chip U2 described in the second termination of described K switch 2, the first end of described divider resistance R5 and the second end meet respectively the triggering pin CLK of described circuit and square-wave and described D flip chip U2, described divider resistance R6, filter capacitor C3 is connected between the triggering pin CLK and ground of described D flip chip U2 respectively, described filter capacitor C4 is connected between the first end and ground of described divider resistance R11, described divider resistance R7 is connected between the replacement pin EN and ground of described D flip chip U2, described divider resistance R8 is connected between the carry pin COUT and replacement pin EN of described D flip chip U2, the power pins VDD of described D flip chip U2 connects described power switch circuit, the grounding pin VSS ground connection of described D flip chip U2, described shunt resistance R16 is connected between the first output pin Q0 and the control end of described the first switching tube of described D flip chip U2, described shunt resistance R17 is connected between the second output pin Q1 and the control end of described second switch pipe of described D flip chip U2, described shunt resistance R18 is connected between the 3rd output pin Q2 and the control end of described the 3rd switching tube of described D flip chip U2, described shunt resistance R19 is connected between the 4th output pin Q3 and the control end of described the 4th switching tube of described D flip chip U2, the low-voltage end of described the first switching tube, the low-voltage end of described second switch pipe, the low-voltage end of described the 3rd switching tube, the equal ground connection of low-voltage end of described the 4th switching tube, the high voltage end of described the first switching tube, the high voltage end of described second switch pipe, the high voltage end of described the 3rd switching tube, the high voltage end of described the 4th switching tube all connects the welding circuit of described LED group.
2. the testing circuit based on LED group as claimed in claim 1, is characterized in that, described power switch circuit comprises:
Diode D1, rechargeable battery BT, K switch 1, filter capacitor C1, divider resistance R10 and photodiode LED5;
The anode of described diode D1 and negative electrode connect respectively the positive pole of described power circuit and described rechargeable battery BT, the negative pole of described rechargeable battery BT is ground connection and described power circuit respectively, the positive pole of rechargeable battery BT described in the first termination of described K switch 1, described filter capacitor C1 is connected between second end and ground of described K switch 1, described divider resistance R10 is connected to the second end of described K switch 1 and the anode of described photodiode LED5, the plus earth of described photodiode LED5, the second end of described K switch 1 connects respectively the first end of described circuit and square-wave and described divider resistance R11.
3. the testing circuit based on LED group as claimed in claim 2, is characterized in that, described circuit and square-wave comprises:
Divider resistance R3, divider resistance R4, feedback resistance R1, feedback resistance R2, operation amplifier chip U1 and polar capacitor C2;
Described divider resistance R3 is connected between the second end of described K switch 1 and the anodal input pin VI+ of described operation amplifier chip U1, described divider resistance R4 is connected between the anodal input pin VI+ and ground of described operation amplifier chip U1, described feedback resistance R1 is connected between the output pin VOUT and anodal input pin VI+ of described operation amplifier chip U1, described feedback resistance R2 is connected between the output pin VOUT and negative pole input pin VI-of described operation amplifier chip U1, the positive pole of described polar capacitor C2 and negative pole connect respectively negative pole input pin VI-and the ground of described operation amplifier chip U1, the output pin VOUT of described operation amplifier chip U1 connects the first end of described divider resistance R5.
4. the testing circuit based on LED group as claimed in claim 1, is characterized in that,
Described the first switching tube adopts NPN type triode Q1, and collector, base stage, the emitter of described NPN type triode Q1 are respectively high voltage end, control end, the low-voltage end of described the first switching tube;
Described second switch pipe adopts NPN type triode Q2, and collector, base stage, the emitter of described NPN type triode Q2 are respectively high voltage end, control end, the low-voltage end of described second switch pipe;
Described the 3rd switching tube adopts NPN type triode Q3, and collector, base stage, the emitter of described NPN type triode Q3 are respectively high voltage end, control end, the low-voltage end of described the 3rd switching tube;
Described the 4th switching tube adopts NPN type triode Q4, and collector, base stage, the emitter of described NPN type triode Q4 are respectively high voltage end, control end, the low-voltage end of described the 4th switching tube.
5. the testing circuit based on LED group as claimed in claim 1, is characterized in that,
Described the first switching tube adopts N-type metal-oxide-semiconductor Q5, and drain electrode, grid, the source electrode of described N-type metal-oxide-semiconductor Q5 are respectively hot end, control end, the cold end of described the first switching tube;
Described second switch pipe adopts N-type metal-oxide-semiconductor Q6, and drain electrode, grid, the source electrode of described N-type metal-oxide-semiconductor Q6 are respectively hot end, control end, the cold end of described second switch pipe;
Described the 3rd switching tube adopts N-type metal-oxide-semiconductor Q7, and drain electrode, grid, the source electrode of described N-type metal-oxide-semiconductor Q7 are respectively hot end, control end, the cold end of described the 3rd switching tube;
Described the 4th switching tube adopts N-type metal-oxide-semiconductor Q8, and drain electrode, grid, the source electrode of described N-type metal-oxide-semiconductor Q8 are respectively hot end, control end, the cold end of described the 4th switching tube.
6. a detecting device, described detecting device comprises power circuit and the testing circuit based on LED group, the input end of the described testing circuit based on LED group and output terminal connect respectively the welding circuit of described power circuit and LED group, it is characterized in that, the described testing circuit based on LED group comprises:
Power switch circuit, circuit and square-wave, divider resistance R5, divider resistance R6, divider resistance R7, divider resistance R8, divider resistance R9, divider resistance R11, shunt resistance R16, shunt resistance R17, shunt resistance R18, shunt resistance R19, K switch 2, filter capacitor C3, filter capacitor C4, the first switching tube, second switch pipe, the 3rd switching tube, the 4th switching tube and D flip chip U2;
Described power switch circuit connects respectively described power circuit and described circuit and square-wave, the first end of described divider resistance R11 and the second end connect respectively the first end of described power switch circuit and described K switch 2, described divider resistance R9 is connected between second end and ground of described K switch 2, the reset pin RESET of D flip chip U2 described in the second termination of described K switch 2, the first end of described divider resistance R5 and the second end meet respectively the triggering pin CLK of described circuit and square-wave and described D flip chip U2, described divider resistance R6, filter capacitor C3 is connected between the triggering pin CLK and ground of described D flip chip U2 respectively, described filter capacitor C4 is connected between the first end and ground of described divider resistance R11, described divider resistance R7 is connected between the replacement pin EN and ground of described D flip chip U2, described divider resistance R8 is connected between the carry pin COUT and replacement pin EN of described D flip chip U2, the power pins VDD of described D flip chip U2 connects described power switch circuit, the grounding pin VSS ground connection of described D flip chip U2, described shunt resistance R16 is connected between the first output pin Q0 and the control end of described the first switching tube of described D flip chip U2, described shunt resistance R17 is connected between the second output pin Q1 and the control end of described second switch pipe of described D flip chip U2, described shunt resistance R18 is connected between the 3rd output pin Q2 and the control end of described the 3rd switching tube of described D flip chip U2, described shunt resistance R19 is connected between the 4th output pin Q3 and the control end of described the 4th switching tube of described D flip chip U2, the low-voltage end of described the first switching tube, the low-voltage end of described second switch pipe, the low-voltage end of described the 3rd switching tube, the equal ground connection of low-voltage end of described the 4th switching tube, the high voltage end of described the first switching tube, the high voltage end of described second switch pipe, the high voltage end of described the 3rd switching tube, the high voltage end of described the 4th switching tube all connects the welding circuit of described LED group.
7. detecting device as claimed in claim 6, is characterized in that, described power switch circuit comprises:
Diode D1, rechargeable battery BT, K switch 1, filter capacitor C1, divider resistance R10 and photodiode LED5;
The anode of described diode D1 and negative electrode connect respectively the positive pole of described power circuit and described rechargeable battery BT, the negative pole of described rechargeable battery BT is ground connection and described power circuit respectively, the positive pole of rechargeable battery BT described in the first termination of described K switch 1, described filter capacitor C1 is connected between second end and ground of described K switch 1, described divider resistance R10 is connected to the second end of described K switch 1 and the anode of described photodiode LED5, the plus earth of described photodiode LED5, the second end of described K switch 1 connects respectively the first end of described circuit and square-wave and described divider resistance R11.
8. detecting device as claimed in claim 7, is characterized in that, described circuit and square-wave comprises:
Divider resistance R3, divider resistance R4, feedback resistance R1, feedback resistance R2, operation amplifier chip U1 and polar capacitor C2;
Described divider resistance R3 is connected between the second end of described K switch 1 and the anodal input pin VI+ of described operation amplifier chip U1, described divider resistance R4 is connected between the anodal input pin VI+ and ground of described operation amplifier chip U1, described feedback resistance R1 is connected between the output pin VOUT and anodal input pin VI+ of described operation amplifier chip U1, described feedback resistance R2 is connected between the output pin VOUT and negative pole input pin VI-of described operation amplifier chip U1, the positive pole of described polar capacitor C2 and negative pole connect respectively negative pole input pin VI-and the ground of described operation amplifier chip U1, the output pin VOUT of described operation amplifier chip U1 connects the first end of described divider resistance R5.
9. detecting device as claimed in claim 6, is characterized in that,
Described the first switching tube adopts NPN type triode Q1, and collector, base stage, the emitter of described NPN type triode Q1 are respectively high voltage end, control end, the low-voltage end of described the first switching tube;
Described second switch pipe adopts NPN type triode Q2, and collector, base stage, the emitter of described NPN type triode Q2 are respectively high voltage end, control end, the low-voltage end of described second switch pipe;
Described the 3rd switching tube adopts NPN type triode Q3, and collector, base stage, the emitter of described NPN type triode Q3 are respectively high voltage end, control end, the low-voltage end of described the 3rd switching tube;
Described the 4th switching tube adopts NPN type triode Q4, and collector, base stage, the emitter of described NPN type triode Q4 are respectively high voltage end, control end, the low-voltage end of described the 4th switching tube.
10. detecting device as claimed in claim 6, is characterized in that,
Described the first switching tube adopts N-type metal-oxide-semiconductor Q5, and drain electrode, grid, the source electrode of described N-type metal-oxide-semiconductor Q5 are respectively hot end, control end, the cold end of described the first switching tube;
Described second switch pipe adopts N-type metal-oxide-semiconductor Q6,
Drain electrode, grid, the source electrode of described N-type metal-oxide-semiconductor Q6 is respectively hot end, control end, the cold end of described second switch pipe;
Described the 3rd switching tube adopts N-type metal-oxide-semiconductor Q7, and drain electrode, grid, the source electrode of described N-type metal-oxide-semiconductor Q7 are respectively hot end, control end, the cold end of described the 3rd switching tube;
Described the 4th switching tube adopts N-type metal-oxide-semiconductor Q8, and drain electrode, grid, the source electrode of described N-type metal-oxide-semiconductor Q8 are respectively hot end, control end, the cold end of described the 4th switching tube.
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