CN104091887A - Perovskite solar cell based on full-sol-gel process and preparation method thereof - Google Patents
Perovskite solar cell based on full-sol-gel process and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a perovskite solar cell based on a full-sol-gel process and a preparation method thereof. The perovskite solar cell based on the full-sol-gel process includes a conductive glass substrate (14), a metal oxide layer (13), a perovskite film layer (12), a hole transportation layer (11), and a back electrode contact layer (10) sequentially from top to bottom. A conductive thin film is arranged on the conductive glass substrate (14). The back electrode contact layer (10) is an ITO (indium tin oxide) layer and substitutes traditional Au and Ag and the like and at the same time, BaTiO3, ZnO, and SnO2 and the like are used as the metal oxide layer so that it is realized that in a preparation process, the sol-gel process is used so that the manufacturing cost is reduced and at the same time, the preparation process is simplified and large-area manufacturing is facilitated.
Description
Technical field
The present invention relates to solar photoelectric and utilize technical field, more specifically relate to a kind of perovskite solar cell based on full sol gel process and preparation method thereof.
Background technology
Photoelectric conversion phenomenon is observed in 1839 by French scientist shellfish Crelle Henri Becq μ erel the earliest, and within 1954, the spendable silica-based solar cell of first item emerges, and it is the solar cell of a pn of having knot.This pn joint solar cell utilizes sunlight to produce operating current, for the external world provides electric energy, silica-based solar cell progressively enters into the marketization thus, but from world wide, because silica-based battery manufacture cost is higher, the installed capacity of photovoltaic cell is very limited.In addition, silica-based solar cell is unfavorable in conjunction with flexible material manufacture, and large area production industry exists obstacle.1991, Switzerland scientist Glan Ze Er
deng having produced for the first time dye-sensitized nano solar cell (Dye Sensitized Solar Cells, DSSC), the research about DSSC has obtained flourish thus.DSSC possesses nano film material, liquid state or solid electrolyte and metal back electrode forms, the main preparation methods that it relates to comprises the methods such as sol-gal process, hydro-thermal reaction method and sputter, have that cost is lower, functional, the simple feature of technique, can be applied to flexible large area manufacture.
Yet also there is weakness in traditional solar cell, particularly enter after megawatt magnitude, owing to relating to the metal material that tellurium, indium, gallium etc. are expensive in such battery, therefore cost improves.The perovskite solar cell proposing first for 2009 has well solved this problem.In perovskite solar cell, be mainly concerned with organic and inorganic perovskite structure, this structure multiform is as AMI
3, wherein A is CH
3nH
3 +or HC (NH
2)
2 +, M is Sn or Pb.This perovskite material charge mobility is high, and is applicable to low temperature process.The perovskite solar cell of report can reach 15.4% conversion efficiency at present, but the back electrode contact layer material of most of perovskite solar cell adopts Au, Ag, so just cause the problem that cost is high, and also there is the problem of complex manufacturing process in current perovskite solar cell.
Summary of the invention
(1) technical problem that will solve
The technical problem to be solved in the present invention is how to reduce the cost of manufacture of perovskite solar cell and to simplify preparation process.
(2) technical scheme
In order to solve the problems of the technologies described above, the invention provides a kind of perovskite solar cell based on full sol gel process, the described perovskite solar cell based on full sol gel process is followed successively by electro-conductive glass substrate 14, metal oxide layer 13, perovskite rete 12, hole transmission layer 11, back electrode contact layer 10 from top to bottom; On described electro-conductive glass substrate 14, there is conductive film; Described back electrode contact layer 10 is tin indium oxide ITO layer.
Preferably, described metal oxide layer 13 is BaTiO
3layer, ZnO layer or SnO
2layer.
Preferably, described perovskite rete 12 is CH
3nH
3pbI
3layer, CH
3nH
3pbBr
3layer or CH
3nH3PbCl
3layer.
Preferably, described hole transmission layer 11 is 2,2', 7,7'-tetra-[N, N-diaminourea]-9,9'-spiral shell two fluorenes layers.
The preparation method of the perovskite solar cell based on full sol gel process, comprises the following steps:
The electro-conductive glass substrate 14 of the long good conductive film of S1, cleaning;
S2, employing sol gel process, prepare metal oxide layer 13, and be deposited on described electro-conductive glass substrate 14;
S3, employing sol gel process generate perovskite rete 10 on described metal oxide layer 13;
S4, adopt sol gel process, spin coating to be dissolved in spiro-OMeTAD solution in chlorobenzene on described perovskite rete 12, prepare hole transmission layer 11;
S5, employing sol gel process, generate back electrode contact layers 10 at described hole transmission layer 11.
Preferably, described step S1 is specially: the electro-conductive glass substrate 14 of long good conductive film is placed in to acetone soln, heating water bath to 50 ℃, ultrasonic 5 minutes; Again described electro-conductive glass substrate 14 is placed in to absolute ethyl alcohol, heating water bath to 50 ℃, ultrasonic 5 minutes.
Preferably, described step S2 is specially:
Described metal oxide layer 13 is BaTiO
3during layer, choose barium acetate Ba (CH
3cOO)
2with tetrabutyl titanate Ti (OC
4h
9)
4as precursor material, glacial acetic acid CH
3cOOH is as solvent, acetylacetone,2,4-pentanedione CH
3cOCH
2cOCH
3as stabilizer; First, by barium acetate Ba (CH
3cOO)
2at normal temperatures with glacial acetic acid CH
3cOOH mixes, and heats stirring, treats that solute dissolves completely, as sample 1; Subsequently, by the tetrabutyl titanate Ti (OC with the equal molar ratio of described barium acetate
4h
9)
4join acetylacetone,2,4-pentanedione CH
3cOCH
2cOCH
3in, and continuous heating stirs, until solute dissolves completely, as sample 2; Subsequently, under the prerequisite of maintenance sample 2 high-speed stirred, sample 1 is slowly added in described sample 2, and keep certain speed to continue to stir, finally obtain presenting the mixed solution of yellow transparent clarification shape; By spin coating mode, will obtain described mixed solution is subsequently deposited on described electro-conductive glass substrate 14 and forms BaTiO
3film; Finally the product obtaining is toasted 5 minutes on the hot plate of 120 ℃, and carry out annealing process; Described BaTiO3 film thickness 300nm-400nm; By regulating the amount of glacial acetic acid, the molar concentration of controlling precursor material is 0.2mol/L;
When described metal oxide layer 13 is ZnO layer, choose zinc acetate Zn (CH
4cOO)
22H
2o is as precursor material, monoethanolamine C
2h
7nO is as stabilizer, EGME CH
3oCH
2cH
2oH is as solvent; First by acetic acid at normal temperatures with EGME CH
3oCH
2cH
2oH mixes, and stirs, and after solute dissolves completely, adds monoethanolamine as stabilizer, continues to stir, until solution is clarified completely, the molar concentration of described precursor material is 0.2mol/L; The rotating speed that keeps subsequently 1500rpm, continues 30 seconds, by spin coating mode, the solution deposition of gained is formed to ZnO film on described electro-conductive glass substrate 14; Finally the product obtaining is toasted 5 minutes on the hot plate of 150 ℃, and carry out annealing process; Described ZnO film thickness is 300nm-400nm;
Described metal oxide layer 13 is SnO
2during layer: choose 5 hydrated stannous chloride SnCl
45H
2o is as precursor material, acetylacetone,2,4-pentanedione C
5h
8o
2as stabilizer, absolute ethyl alcohol CH
3cH
2oH is as solvent; First 5 hydrated stannous chlorides are mixed with absolute ethyl alcohol at normal temperatures, molar concentration remains on 0.1mol/L, and continues to stir; After solute dissolves completely, add a small amount of acetylacetone,2,4-pentanedione as stabilizer, continue to stir, until solution is clarified completely; The rotating speed that keeps subsequently 1500rpm, continues 35 seconds, by spin coating mode, the solution deposition obtaining is formed to SnO on described electro-conductive glass substrate 14
2film; Finally the product obtaining is toasted 5 minutes on the hot plate of 200 ℃, and carry out annealing process; Described SnO
2film thickness is 300nm-400nm.
Preferably, described step S3 is specially:
S31, by lead iodide PbI
2powder is dissolved in DMF and keeps stirring, and the molar concentration of described lead iodide is 1mol/L, is spin-coated on subsequently on described metal oxide layer 13, and spin speed remains on 6500rpm, and the spin coating time is 90s;
S32, be dried processing;
S33, be placed in the methyl IBr CH that concentration is 0.05mol/L
3nH
3in the alcoholic solution of I, the duration is 20s, and utilizes alcoholic solution of the same race to clean, be dried and process, and forms metal oxide layer/perovskite rete product, and thickness is 200nm-300nm.
Preferably, the molar concentration of the spiro-OMeTAD solution in described step S4 is 0.05mol/L; The thickness of described hole transmission layer is 50nm-100nm.
Preferably, described step S5 is specially: choose 4.5 nitric hydrate indium In (NO
3)
34.5H
2o and 5 hydrated stannous chloride SnCl
45H
2o is as precursor material, acetylacetone,2,4-pentanedione (C
5h
8o
2) as stabilizer, absolute ethyl alcohol is as solvent;
S51,4.5 nitric hydrate indiums are added in absolute ethyl alcohol at 60 ℃, mix and stir, after dissolving, add a small amount of acetylacetone,2,4-pentanedione;
S52,5 hydrated stannous chlorides are dissolved in absolute ethyl alcohol, stir two minutes at 60 ℃, two parts of solution are mixed, then continue to stir, after 5 minutes, close heating, solution is clarification, keeps the rotating speed of 3500rpm, continues 30 seconds; Mole solubility of described 4.5 nitric hydrate indiums is 0.13mol/L, and the solubility of described 5 hydrated stannous chlorides is 0.0135mol/L, and the concentration of described acetylacetone,2,4-pentanedione is 0.39mol/L;
S53, by spin coating mode by described step S52 to mixed solution be deposited on described hole transmission layer 11, and carry out annealing process, complete the making of back electrode contact layer; The thickness of described back electrode contact layer is 50nm-100nm.
(3) beneficial effect
The invention provides a kind of perovskite solar cell based on full sol gel process and preparation method thereof, solar cell of the present invention is used ITO as the back electrode contact layer material in perovskite solar cell, substitute traditional Au, Ag etc., used BaTiO simultaneously
3, ZnO, SnO
2deng as metal oxide layer, realized the use sol gel process of preparation process, when reducing manufacturing cost, simplified preparation process, be conducive to large area manufacture.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the structural representation of a kind of perovskite solar cell based on full sol gel process of the present invention.
Marginal data:
10, back electrode contact layer; 11, hole transmission layer; 12 perovskite retes; 13 metal oxide layers; 14 electro-conductive glass substrates.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in further detail.Following examples are used for illustrating the present invention, but can not be used for limiting the scope of the invention.
Fig. 1 is the structural representation of a kind of perovskite solar cell based on full sol gel process of the present invention; Perovskite solar cell based on full sol gel process of the present invention is followed successively by FTO (mixing the tin oxide of F) electro-conductive glass substrate 14, metal oxide layer 13, perovskite rete 12, hole transmission layer 11, the back electrode contact layer 10 of the Japanese Nippon Sheet Glass of employing company from top to bottom; Described back electrode contact layer 10 is tin indium oxide ITO layer; Described metal oxide layer 13 is BaTiO
3layer, ZnO layer or SnO
2layer; Described perovskite rete 12 is CH
3nH
3pbI
3layer, CH
3nH
3pbBr
3layer or CH
3nH
3pbCl
3layer; Described hole transmission layer 11 is 2,2', 7,7'-tetra-[N, N-diaminourea]-9,9'-spiral shell two fluorenes layers.
Concrete preparation method is as follows:
S1, cleaning electro-conductive glass substrate 14: use supersonic cleaning machine to clean the electric glass substrate of long good FTO, electric glass substrate is placed in to acetone soln, heating water bath to 50 ℃, ultrasonic 5 minutes; Again electro-conductive glass substrate is placed in to absolute ethyl alcohol, heating water bath to 50 ℃, ultrasonic 5 minutes;
S2, prepare metal oxide layer 13: adopt sol-gel technique, choose barium acetate (Ba (CH
3cOO)
2) and tetrabutyl titanate (Ti (OC
4h
9)
4) as precursor material, glacial acetic acid (CH
3cOOH) as solvent, acetylacetone,2,4-pentanedione (CH
3cOCH
2cOCH
3) as stabilizer; First by 0.002mol barium acetate (Ba (CH
3cOO)
2) at normal temperatures with 5ml glacial acetic acid (CH
3cOOH) mix, and heat stirring, treat that solute dissolves completely, as sample 1; Subsequently, 0.002mol tetrabutyl titanate (Ti (OC
4h
9)
4) join 5ml acetylacetone,2,4-pentanedione (CH
3cOCH
2cOCH
3), and continuous heating stirs, until solute dissolves completely, as sample 2; Subsequently, sample 1 is slowly added to mixing under the prerequisite that keeps sample 2 high-speed stirred, and keep certain speed to continue to stir, final solution presents yellow transparent clarification shape; By spin coating mode, the mixed solution obtaining is deposited on electro-conductive glass substrate and forms BaTiO subsequently
3film.BaTiO
3film toasts 5 minutes after making on the hot plate of 120 ℃, removes organic principle, and carries out annealing process, completes the making of metal oxide layer film, BaTiO
3film thickness 300nm-400nm.In addition, can, by regulating the amount of glacial acetic acid, control the molar fraction of precursor material all in 0.2mol/L left and right;
S3, prepare perovskite rete 12: adopt sol-gel technique, by 0.01mol lead iodide (PbI
2) powder is dissolved in DMF and maintenance is stirred, molar concentration remains on 1mol/L left and right, is spin-coated on subsequently on described metal oxide layer and forms perovskite rete, and spin speed remains on 6500rpm, and the spin coating time is 90s; Be dried subsequently processing; Subsequently the product obtaining being placed in to molar concentration is the methyl IBr (CH of 0.05mol/L left and right
3nH
3i) in alcoholic solution, the duration is 20s left and right, and utilizes alcoholic solution of the same race to clean, be dried and process, and forms and belongs to oxide skin(coating)/perovskite rete, and thickness is 200nm-300nm;
S4, prepare hole transmission layer 11: adopt sol-gel technique, spin coating is dissolved in the solution of the spiro-OMeTAD in chlorobenzene on described perovskite rete 12, molar concentration is 0.05mol/L left and right, prepares hole transmission layer; The thickness of described hole transmission layer is 50nm-100nm;
S5, prepare back electrode contact layer: adopt sol-gel technique, choose 4.5 nitric hydrate indiums (In (NO3)
34.5H
2o) with 5 hydrated stannous chloride (SnCl
45H
2o) as precursor material, acetylacetone,2,4-pentanedione (C
5h
8o
2) as stabilizer, absolute ethyl alcohol is as solvent; Wherein the ratio of the amount of substance of each material is In:C
5h
8o
2for 1:3, In:Sn is 10:1; First 0.001mol4.5 nitric hydrate indium is added in 5mL absolute ethyl alcohol at 60 ℃, mix and stir, after dissolving, add a small amount of acetylacetone,2,4-pentanedione; Subsequently 0.0001mol5 hydrated stannous chloride is dissolved in 2.5mL absolute ethyl alcohol, stirs after two minutes two parts of solution are mixed at 60 ℃, then continue to stir, after 5 minutes, close heating, solution is clarification; The rotating speed that keeps 3500rpm, continues 30 seconds, then by spin coating mode by thin film deposition on described hole transmission layer, and carry out annealing process, complete the making of back electrode contact layer.Described back electrode contact layer thickness is 50nm-100nm.
The metal oxide layer 13 of perovskite solar cell prepared by above-mentioned preparation method is BaTiO
3layer, described metal oxide layer 13 can also be ZnO layer or SnO
2layer, now the preparation method of all the other structures of perovskite solar cell except metal oxide layer is identical with above-mentioned preparation method.
When metal oxide layer 13 is ZnO, the preparation method of metal oxide layer is: adopt sol-gel technique, choose zinc acetate (Zn (CH
4cOO)
22H
2o) as precursor material, monoethanolamine (C
2h
7nO) as stabilizer; EGME (CH
3oCH
2cH
2oH) as solvent.First by 0.002mol zinc acetate; At normal temperatures with 10mL EGME (CH
3oCH
2cH
2oH) mix, and stir, after solute dissolves completely, add monoethanolamine as stabilizer, continue to stir, until solution is clarified completely; Solution molar concentration remains on 0.2mol/L left and right; The rotating speed that keeps subsequently 1500rpm, continues 30 seconds, by spin coating mode, thin film deposition is formed to ZnO film on described electro-conductive glass substrate 14.ZnO film toasts 5 minutes after making on the hot plate of 150 ℃, removes organic principle, and carries out annealing process, completes the making of burning layer film, ZnO film thickness 300nm-400nm.
When metal oxide layer 13 is SnO, the preparation method of metal oxide layer is: adopt sol-gel technique, choose 5 hydrated stannous chloride (SnCl
45H
2o) as precursor material, acetylacetone,2,4-pentanedione (C
5h
8o
2) as stabilizer, absolute ethyl alcohol (CH
3cH
2oH) as solvent; First 0.002mol5 hydrated stannous chloride is mixed with 20ml absolute ethyl alcohol at normal temperatures, and continue to stir; After solute dissolves completely, add acetylacetone,2,4-pentanedione as stabilizer, continue to stir, until solution is clarified completely; Molar concentration remains on 0.1mol/L left and right; The rotating speed that keeps subsequently 1500rpm, continues 35 seconds, by spin coating mode, thin film deposition is formed to SnO film on described electro-conductive glass substrate 14.SnO film toasts 5 minutes after making on the hot plate of 200 ℃, removes organic principle, and carries out annealing process, completes the making of metal-oxide film, SnO film thickness 300nm-400nm.
Solar cell of the present invention is used ITO as the back electrode contact layer material in perovskite solar cell, has substituted traditional Au, Ag etc., uses BaTiO simultaneously
3, ZnO, SnO
2deng as metal oxide layer, realized the use sol gel process of preparation process, when reducing manufacturing cost, simplified preparation process, be conducive to large area manufacture.
Above execution mode is only for the present invention is described, but not limitation of the present invention.Although the present invention is had been described in detail with reference to embodiment, those of ordinary skill in the art is to be understood that, technical scheme of the present invention is carried out to various combinations, revises or is equal to replacement, do not depart from the spirit and scope of technical solution of the present invention, all should be encompassed in the middle of claim scope of the present invention.
Claims (10)
1. the perovskite solar cell based on full sol gel process, it is characterized in that, the described perovskite solar cell based on full sol gel process is followed successively by electro-conductive glass substrate (14), metal oxide layer (13), perovskite rete (12), hole transmission layer (11), back electrode contact layer (10) from top to bottom; On described electro-conductive glass substrate (14), there is conductive film; Described back electrode contact layer (10) is tin indium oxide ITO layer.
2. the perovskite solar cell based on full sol gel process according to claim 1, is characterized in that, described metal oxide layer (13) is BaTiO
3layer, ZnO layer or SnO
2layer.
3. the perovskite solar cell based on full sol gel process according to claim 1, is characterized in that, described perovskite rete (12) is CH
3nH
3pbI
3layer, CH
3nH
3pbBr
3layer or CH
3nH3PbCl
3layer.
4. the perovskite solar cell based on full sol gel process according to claim 1, is characterized in that, described hole transmission layer (11) is 2,2', 7,7'-tetra-[N, N-diaminourea]-9,9'-spiral shell two fluorenes layers.
5. a preparation method for the perovskite solar cell based on full sol gel process, is characterized in that, comprises the following steps:
The electro-conductive glass substrate (14) of the long good conductive film of S1, cleaning;
S2, employing sol gel process, prepare metal oxide layer (13), and be deposited on described electro-conductive glass substrate (14);
S3, employing sol gel process, at the upper perovskite rete (10) that generates of described metal oxide layer (13);
S4, employing sol gel process, the spiro-OMeTAD solution that spin coating is dissolved in chlorobenzene is upper at described perovskite rete (12), prepares hole transmission layer (11);
S5, employing sol gel process, generate back electrode contact layer (10) at described hole transmission layer (11).
6. according to right, want the preparation method described in 5, it is characterized in that, described step S1 is specially: the electro-conductive glass substrate (14) of long good conductive film is placed in to acetone soln, heating water bath to 50 ℃, ultrasonic 5 minutes; Again described electro-conductive glass substrate (14) is placed in to absolute ethyl alcohol, heating water bath to 50 ℃, ultrasonic 5 minutes.
7. according to right, want the preparation method described in 5, it is characterized in that, described step S2 is specially:
Described metal oxide layer (13) is BaTiO
3during layer, choose barium acetate Ba (CH
3cOO)
2with tetrabutyl titanate Ti (OC
4h
9)
4as precursor material, glacial acetic acid CH
3cOOH is as solvent, acetylacetone,2,4-pentanedione CH
3cOCH
2cOCH
3as stabilizer; First, by barium acetate Ba (CH
3cOO)
2at normal temperatures with glacial acetic acid CH
3cOOH mixes, and heats stirring, treats that solute dissolves completely, as sample 1; Subsequently, by the tetrabutyl titanate Ti (OC with the equal molar ratio of described barium acetate
4h
9)
4join acetylacetone,2,4-pentanedione CH
3cOCH
2cOCH
3in, and continuous heating stirs, until solute dissolves completely, as sample 2; Subsequently, under the prerequisite of maintenance sample 2 high-speed stirred, sample 1 is slowly added in described sample 2, and keep certain speed to continue to stir, finally obtain presenting the mixed solution of yellow transparent clarification shape; By spin coating mode, will obtain described mixed solution subsequently and be deposited on the upper BaTiO of formation of described electro-conductive glass substrate (14)
3film; Finally the product obtaining is toasted 5 minutes on the hot plate of 120 ℃, and carry out annealing process; Described BaTiO
3film thickness 300nm-400nm; By regulating the amount of glacial acetic acid, the molar concentration of controlling precursor material is 0.2mol/L;
When described metal oxide layer (13) is ZnO layer, choose zinc acetate Zn (CH
4cOO)
22H
2o is as precursor material, monoethanolamine C
2h
7nO is as stabilizer, EGME CH
3oCH
2cH
2oH is as solvent; First by acetic acid at normal temperatures with EGME CH
3oCH
2cH
2oH mixes, and stirs, and after solute dissolves completely, adds monoethanolamine as stabilizer, continues to stir, until solution is clarified completely, the molar concentration of described precursor material is 0.2mol/L; The rotating speed that keeps subsequently 1500rpm, continues 30 seconds, by spin coating mode, the solution deposition of gained is above formed to ZnO film at described electro-conductive glass substrate (14); Finally the product obtaining is toasted 5 minutes on the hot plate of 150 ℃, and carry out annealing process; Described ZnO film thickness is 300nm-400nm;
Described metal oxide layer (13) is SnO
2during layer: choose 5 hydrated stannous chloride SnCl
45H
2o is as precursor material, acetylacetone,2,4-pentanedione C
5h
8o
2as stabilizer, absolute ethyl alcohol CH
3cH
2oH is as solvent; First 5 hydrated stannous chlorides are mixed with absolute ethyl alcohol at normal temperatures, molar concentration is 0.1mol/L, and continues to stir; After solute dissolves completely, add a small amount of acetylacetone,2,4-pentanedione as stabilizer, continue to stir, until solution is clarified completely; The rotating speed that keeps subsequently 1500rpm, continues 35 seconds, by spin coating mode, the solution deposition obtaining is above formed to SnO at described electro-conductive glass substrate (14)
2film; Finally the product obtaining is toasted 5 minutes on the hot plate of 200 ℃, and carry out annealing process; Described SnO2 film thickness is 300nm-400nm.
8. according to right, want the preparation method described in 5, it is characterized in that, described step S3 is specially:
S31, lead iodide PbI2 powder is dissolved in DMF and keeps stirring, the molar concentration of described lead iodide is 1mol/L, is spin-coated on subsequently described metal oxide layer (13) upper, and spin speed remains on 6500rpm, and the spin coating time is 90s;
S32, be dried processing;
S33, be placed in the methyl IBr CH that concentration is 0.05mol/L
3nH
3in the alcoholic solution of I, the duration is 20s, and utilizes alcoholic solution of the same race to clean, be dried and process, and forms metal oxide layer/perovskite rete product, and thickness is 200nm-300nm.
9. according to right, want the preparation method described in 5, it is characterized in that, the molar concentration of the spiro-OMeTAD solution in described step S4 is 0.05mol/L; The thickness of described hole transmission layer is 50nm-100nm.
10. according to right, want the preparation method described in 5, it is characterized in that, described step S5 is specially: choose 4.5 nitric hydrate indium In (NO
3)
34.5H
2o and 5 hydrated stannous chloride SnCl
45H
2o is as precursor material, acetylacetone,2,4-pentanedione (C
5h
8o
2) as stabilizer, absolute ethyl alcohol is as solvent;
S51,4.5 nitric hydrate indiums are added in absolute ethyl alcohol at 60 ℃, mix and stir, after dissolving, add a small amount of acetylacetone,2,4-pentanedione;
S52,5 hydrated stannous chlorides are dissolved in absolute ethyl alcohol, stir two minutes at 60 ℃, two parts of solution are mixed, then continue to stir, after 5 minutes, close heating, solution is clarification, keeps the rotating speed of 3500rpm, continues 30 seconds; Mole solubility of described 4.5 nitric hydrate indiums is 0.13mol/L, and the solubility of described 5 hydrated stannous chlorides is 0.0135mol/L, and the concentration of described acetylacetone,2,4-pentanedione is 0.39mol/L;
S53, by spin coating mode by described step S52 to mixed solution to be deposited on described hole transmission layer (11) upper, and carry out annealing process, complete the making of back electrode contact layer; The thickness of described back electrode contact layer is 50nm-100nm.
Priority Applications (1)
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