CN104091851A - Terahertz sensor based on ring gate MOSFET structure - Google Patents
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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Abstract
The invention relates to a terahertz sensor based on a ring gate MOSFET structure. The grid of the ring gate MOSFET structure is bent to surround a source so as to form a ring, and a drain is distributed at a periphery. Compared to a conventional straight gate MOSFET structure, the ring gate structure reduces the area of the source and decreases source end parasitic capacitance. When a terahertz waveband is detected, the ring gate MOSFET structure can obtain greater voltage response (RV) and smaller nose equivalent power (NEP) than an equivalent straight gate MOSFET structure.
Description
Technical field
The present invention relates to a kind of MOSFET terahertz signal transducer, especially relate to a kind of terahertz signal transducer of surrounding-gate MOSFET structure.
Background technology
Terahertz ray be a kind of between microwave and infrared between ray.Due to it, to possess frequency high, and penetration capacity is strong, the biological remarkable advantage such as harmless, has huge application market at aspects such as broadband connections, radar, electronic countermeasures, medical imaging, safety inspections.Be subject to the extensive concern of scientific circles as the terahertz detector of THz imaging technology core devices always.Current terahertz detector has bolometer, optical phonon detector, pyroelectric detector, Schottky barrier diode electron detector etc.These terahertz detectors mostly need special Non-traditional Techniques preparation, have research and development complex process, cost costliness, the outstanding problem such as equipment is huge.CMOS terahertz detector based on integrated circuit fabrication process, has working and room temperature, low cost, and simple operations technique, the clear superiorities such as high imaging capability, are to realize the practical important channel of Terahertz Technology future.
CMOS terahertz detector comprises cmos sensor, two main modular of Terahertz antenna and a reception amplifying circuit supplementary module.Cmos sensor is mainly to utilize inversion layer two-dimensional electron gas in MOSFET device to convert THz wave to direct current signal.When MOSFET device channel enough in short-term, experimentally can detect this terahertz signal.Voltage response (the R of device under terahertz wave band
v) and noise equivalent power (NEP) be the leading indicator that characterizes MOSFET Terahertz transducer.Research shows, cmos device channel length is shorter, detection performance R
vbetter.2009, the Erik of Germany
[1] utilize first the transistor of 0.25m integrated circuit technology to survey THz wave, the Terahertz image of having realized the CMOS focal plane array of 3X5 and having produced at 650GHz wave band; 2010, the people [2] such as the F.Schuster of French electron and information technology experiment (CEA-LETI) adopted 0.13m integrated circuit technology to realize CMOS terahertz imaging chip.Each pixel is by the fan-shaped connection antenna of difference, and nMOSFET transducer and capacitive feedback baseband amplifier form, and Pixel Dimensions is 190m × 190m, and this imager can, in the imaging of 0.3～1THz terahertz wave band, be 1.8KV/W in the responsiveness of 1THz left and right; 2011, the HaniSherry[3 of Germany] application 65nm CMOS technique and SOI technology, make high-performance CMOS terahertz imaging device, its noise equivalent power NEP can reach 17pW/Hz
0.5.
At present, adopting more Advanced Integrated Circuits making technology development CMOS Terahertz transducer is the main trend of this technology.But the use of advanced process technique sharply increases the cost of CMOS terahertz detector; Meanwhile, along with further dwindling of device size, will there are various integrity problems in small-geometry transistor device, as self-heating integrity problem, device parameters uncertainty, RTN noise problem etc.The detection advantage of original use small size cmos device is progressively covered by expensive process costs and complicated device reliability problem.Utilize novel CMOS structure to improve the response of Terahertz transducer, reduce sensor noise and will become the main direction of studying of CMOS Terahertz Technology of future generation.
Finding a kind of novel CMOS structure lifting CMOS Terahertz response performance is main purpose of the present invention.Existing result of study shows [4], and the source electrode parasitic capacitance of signal input is larger on the impact of CMOS Terahertz sensor performance.Reduce source electrode parasitic capacitance, can effectively improve the voltage response of transducer.
List of references:
[1]E.
U.Pfeiffer,A.Lisauskas,and?H.Roskos“A0.65THz?Focal-Plane?Array?in?a?Quarter-Micron?CMOS?Process?Technology”IEEE?Journal?of?Solid-State?Circuits,vol.44,no.7,pp.1968-1976(2009).
[2]Schuster?F.；Univ.Montpellier2,Montpellier,France；Videlier,H.；Sakowicz,M.；Teppe,F.“Imaging?above1THz?limit?with?Si-MOSFET?detectors”35th?International?Conference?on?Infrared?Millimeter?and?Terahertz?Waves(IRMMW-THz),Itlia(2010).
[3]Sherry,H.；Al?Hadi,R.；Grzyb,J.；Ojefors,E.；Cathelin,A.；Kaiser,A.；Pfeiffer,U.R.“Lens-Integrated?THz?Imaging?Arrays?in65nm?CMOS?Technologies”IEEE?Radio?Frequency?Integrated?Circuits?Symposium(RFIC),Baltimore,MD(2011).
[4]Min?Woo?Ryu；Jeong?Seop?Lee；Kibog?Park；Kyung?Rok?Kim；Wook-Ki?Park；Seong-Tae?Han“TCAD?modeling?and?simulation?of?non-resonant?plasmonic?THz?detector?based?on?asymmetric?silicon?MOSFETs”International?Conference?on?Simulation?of?Semiconductor?Processes?and?Devices(SISPAD),Glasgow2013.
Summary of the invention
The object of the invention, for the large parasitic source electric capacity in conventional MOSFET structure transducer, has proposed a kind of Terahertz transducer based on surrounding-gate MOSFET structure.This transducer reduces the method for source electrode area by gate-all-around structure, reduce input parasitic capacitance, and this structure has not only promoted Terahertz voltage response, has also reduced the noise equivalent power of device, realizes the efficient conversion from terahertz signal to direct current signal.
Technical scheme of the present invention is: a kind of Terahertz transducer based on surrounding-gate MOSFET structure, comprise surrounding-gate MOSFET structure, described surrounding-gate MOSFET structure comprises that one at the source electrode of center, around the bending grid of source electrode and in the drain electrode of grid periphery.Compared to traditional MOSFET structure, by grid bending, distribute around source electrode, there is less source area, therefore there is less input impedance.
Further, described surrounding-gate MOSFET structure single tube adopts P type trap; Center is a rescinded angle square, and rescinded angle square area is carried out to N-shaped injection, forms source electrode; In the surrounding of source electrode, around polysilicon gate; Further N-shaped injection is carried out in grid outside, form ring-like drain electrode.
Further, described source electrode size can be used minimum annular size to determine by process node.
Further, comprise two symmetrical surrounding-gate MOSFET structures, two surrounding-gate MOSFET structure sharing drain electrodes.
Further, the grid of described two symmetrical surrounding-gate MOSFET structures adds identical operating voltage; Source electrode connects respectively positive and negative the two poles of the earth of terahertz signal; Signal after drain electrode output mixing; AC signal offsets by symmetrical surrounding-gate MOSFET structure single tube output, and direct current signal is exported by drain electrode.
Further, the grid operating voltage of described surrounding-gate MOSFET structure is higher than the threshold voltage 0.08-0.12V of MOSFET structure, to obtain less noise equivalent power NEP.
Beneficial effect of the present invention: compared with the conventional MOS FET structure transducer of the Terahertz transducer of surrounding-gate MOSFET structure and equivalent grid width, by grid bending, distribute around source electrode, effectively reduce source electrode area, source electrode and substrate are suppressed, parasitic parameter between source electrode and grid, thus the Terahertz input impedance of device reduced, improve Terahertz voltage response R
v, reduced noise equivalent power NEP.
Brief description of the drawings
Fig. 1: surrounding-gate MOSFET structure Terahertz transducer 3D model;
Fig. 2: straight gate MOSFET structure Terahertz transducer 3D model;
Fig. 3: MOSFET structural representation.
Embodiment
Be elaborated to proposing a plan below in conjunction with accompanying drawing.
This example uses 3D-TCAD device simulation, and 0.18m surrounding-gate MOSFET structure is carried out to performance characterization and contrast with corresponding straight gate MOSFET structure transducer.The 3D model of gate-all-around structure is set up in emulation based on 0.18m standard CMOS process parameter.As shown in Figure 1,3D model comprises two symmetrical surrounding-gate MOSFET structures.Device is placed on P type substrate, and grid are long is 0.18m; Source electrode area is 0.33m
2; Ring grid are peripheral is drain electrode.The threshold voltage of surrounding-gate MOSFET structure is 0.52V.In order to contrast with ordinary straight grid structural behaviour, gate-all-around structure equivalence is become to straight grid structure.Equivalent process mainly, by the channel resistance of the different straight grid widths of emulation, is chosen the straight grid structure identical with the channel resistance of surrounding-gate MOSFET structure as equivalent structure.Simulation result shows, the channel resistance of the straight gate MOSFET structure that grid width is 2.78m equates with the channel resistance of surrounding-gate MOSFET structure.Fig. 2 is the 3D model of the straight gate MOSFET structure of grid width 2.78m equivalence.
Utilize the Terahertz voltage response R of software ring grid and straight gate MOSFET structure
vand NEP.As shown in Figure 3, grid voltage V
g=0.6V; Source electrode terahertz signal V
sin=1X10
-3sin (t) V, wherein ω=2 π f, f=500GHz; Ground connection after the resistance of drain electrode connection R=1X1012, this arranges lower drain electrode can be equivalent to floating dummy status.Test Terahertz response voltage V
dCvoltmeter in parallel with a resistor.Under set bias condition, obtain V
dCafter, further by Terahertz response and the noise power of following formulat calculator part:
Table 1 is simulated the ring grid and directly Terahertz voltage response and the noise equivalent power of grid of equivalence that obtain by 3D-TCAD according to above-mentioned bias voltage
As shown in table 1, compare straight grid structure, the Terahertz voltage response R of gate-all-around structure
v3 times are increased; And noise equivalent power NEP is reduced to original 1/3.
Although the present invention discloses as above with preferred embodiment, so it,, not in order to limit the present invention, has and conventionally knows the knowledgeable in technical field of the present invention, without departing from the spirit and scope of the present invention, and when doing various change and wetting.Therefore, protection scope of the present invention is when being as the criterion depending on claims person of defining.
Claims (6)
1. the Terahertz transducer based on surrounding-gate MOSFET structure, is characterized in that: comprise surrounding-gate MOSFET structure, described surrounding-gate MOSFET structure comprises that one at the source electrode of center, around the bending grid of source electrode and in the drain electrode of grid periphery.
2. a kind of Terahertz transducer based on surrounding-gate MOSFET structure according to claim 1, is characterized in that: described surrounding-gate MOSFET structure single tube adopts P type trap; Center is a rescinded angle square, and rescinded angle square area is carried out to N-shaped injection, forms source electrode; In the surrounding of source electrode, around polysilicon gate; Further N-shaped injection is carried out in grid outside, form ring-like drain electrode.
3. a kind of Terahertz transducer based on surrounding-gate MOSFET structure according to claim 2, is characterized in that: described source electrode size can be used minimum annular size to determine by process node.
4. a kind of Terahertz transducer based on surrounding-gate MOSFET structure according to claim 1, is characterized in that: comprise two symmetrical surrounding-gate MOSFET structures, two surrounding-gate MOSFET structure sharing drain electrodes.
5. a kind of Terahertz transducer based on surrounding-gate MOSFET structure according to claim 4, is characterized in that: the grid of described two symmetrical surrounding-gate MOSFET structures adds identical operating voltage; Source electrode connects respectively positive and negative the two poles of the earth of terahertz signal; Signal after drain electrode output mixing; AC signal offsets by symmetrical surrounding-gate MOSFET structure single tube output, and direct current signal is exported by drain electrode.
6. a kind of Terahertz transducer based on surrounding-gate MOSFET structure according to claim 1, is characterized in that: the grid operating voltage of described surrounding-gate MOSFET structure is higher than the threshold voltage 0.08-0.12V of MOSFET structure.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113359329A (en) * | 2021-06-01 | 2021-09-07 | 中国科学院半导体研究所 | Terahertz switch and terahertz wave optical signal control method |
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| US20050110061A1 (en) * | 2003-11-26 | 2005-05-26 | Kazunobu Kuwazawa | Solid-state imaging device |
| CN1716621A (en) * | 2004-06-29 | 2006-01-04 | 富士通株式会社 | Threshold voltage modulation image sensor |
| JP2006222329A (en) * | 2005-02-14 | 2006-08-24 | Elpida Memory Inc | Semiconductor device |
| JP2010219442A (en) * | 2009-03-18 | 2010-09-30 | Panasonic Corp | Terahertz receiving element |
| CN103090977A (en) * | 2012-11-30 | 2013-05-08 | 南京大学 | Terahertz signal detection device |
| CN103268874A (en) * | 2013-04-23 | 2013-08-28 | 中国电子科技集团公司第十一研究所 | Radiation-proof infrared focal plane detector reading circuit |
| US20140091376A1 (en) * | 2011-05-31 | 2014-04-03 | Johann Wolfgang Goethe-Universitat Frankfurt A.M. | Monolithically Integrated Antenna and Receiver Circuit |
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2014
- 2014-06-11 CN CN201410258303.3A patent/CN104091851B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050110061A1 (en) * | 2003-11-26 | 2005-05-26 | Kazunobu Kuwazawa | Solid-state imaging device |
| CN1716621A (en) * | 2004-06-29 | 2006-01-04 | 富士通株式会社 | Threshold voltage modulation image sensor |
| JP2006222329A (en) * | 2005-02-14 | 2006-08-24 | Elpida Memory Inc | Semiconductor device |
| JP2010219442A (en) * | 2009-03-18 | 2010-09-30 | Panasonic Corp | Terahertz receiving element |
| US20140091376A1 (en) * | 2011-05-31 | 2014-04-03 | Johann Wolfgang Goethe-Universitat Frankfurt A.M. | Monolithically Integrated Antenna and Receiver Circuit |
| CN103090977A (en) * | 2012-11-30 | 2013-05-08 | 南京大学 | Terahertz signal detection device |
| CN103268874A (en) * | 2013-04-23 | 2013-08-28 | 中国电子科技集团公司第十一研究所 | Radiation-proof infrared focal plane detector reading circuit |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113359329A (en) * | 2021-06-01 | 2021-09-07 | 中国科学院半导体研究所 | Terahertz switch and terahertz wave optical signal control method |
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