CN104091765A - 一种针对mems惯性器件半导体的封装方法 - Google Patents

一种针对mems惯性器件半导体的封装方法 Download PDF

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Publication number
CN104091765A
CN104091765A CN201410333741.1A CN201410333741A CN104091765A CN 104091765 A CN104091765 A CN 104091765A CN 201410333741 A CN201410333741 A CN 201410333741A CN 104091765 A CN104091765 A CN 104091765A
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inertial device
mems inertial
inertia device
packaging
targeted
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丰立涛
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Senodia Technologies Shanghai Co Ltd
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Senodia Technologies Shanghai Co Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00301—Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Micromachines (AREA)

Abstract

本发明公开了一种针对MEMS惯性器件半导体的封装方法，其特征在于：该方法包括如下步骤：S1:采用COL(Chip on Lead)的引线框架；S2:将大面积金属裸露焊盘通过化学刻蚀或机械冲压方式加工成梳齿状结构；S3:针对MEMS惯性器件特性，进行材料筛选；S4:实验设计(DOE)优化选择针对MEMS惯性器件方形扁平无引脚封装(QFN)的封装材料。通过改进方形扁平无引脚封装(QFN)所用到的引线框架，解决大面积金属裸露焊盘的热膨胀系数大，导热系数大，弹性模量高等问题，进而避免了机械应力，热应力对MEMS惯性器件工作状态的影响。

Description

一种针对MEMS惯性器件半导体的封装方法
技术领域
本发明涉及一种半导体的封装方法，尤其涉及一种针对MEMS惯性器件半导体的封装方法。 
背景技术
现有方形扁平无引脚封装(QFN)，封装底部中央位置有一个大面积裸露焊盘用来导热与载片。由于这一个大面积裸露焊盘一般为金属材质，金属的热膨胀系数大，导热系数大，弹性模量高，会在芯片的生产制造，以及使用过程中的不同阶段向芯片内部传导过多的热应力，机械应力等。而MEMS惯性器件本身并不是高功耗半导体器件，并无过高的散热需求。因此大面积金属裸露焊盘对MEMS惯性器件工作状态无任何好处。而且，目前标准的方形扁平无引脚封装(QFN)的封装材料选择也有着随意性，并无针对MEMS惯性器件特性而优化的封装材料组合。不同封装材料混合使用，而各种材料的膨胀和收缩系数不同，进而引起的应力(机械应力，热应力)附加在MEMS惯性器件上，导致MEMS惯性器件工作状态发生偏移。 
发明内容
本发明的目的是解决现有技术中的大面积金属裸露焊盘的热膨胀系数大、导热系数大、弹性模量高，而导致MEMS惯性器件工作状态发送偏移的问题，提供一种针对MEMS惯性器件半导体的封装方法。 
本发明的技术方案是：一种针对MEMS惯性器件半导体的封装方法，该方法包括如下步骤： 
S1:采用COL(Chip on Lead)的引线框架； 
S2:将大面积金属裸露焊盘通过化学刻蚀或机械冲压方式加工成梳齿状结构； 
S3:针对MEMS惯性器件特性，进行材料筛选； 
S4:实验设计(DOE)优化选择针对MEMS惯性器件方形扁平无引脚封装(QFN)的封装材料。 
本发明能够有效减少了金属裸露焊盘的导热面积，梳齿状结构能够在一定程度上通过形变吸收各种封装材料混合使用时，由于各种材料的膨胀和收缩系数不同，进而引起的应力。这种应力附加在MEMS惯性器件上，会导致MEMS惯性器件工作状态发生偏移。又由于梳齿状结构实际上也能承担起承载芯片的作用，应用COL(Chip on Lead)的引线框架，并不要求改变目前方形扁平无引脚封装(QFN)的标准封装工艺。 
通过改进方形扁平无引脚封装(QFN)所用到的引线框架，解决大面积金属裸露焊盘的热膨胀系数大，导热系数大，弹性模量高等问题，进而避免了机械应力，热应力对MEMS惯性器件工作状态的影响。通过材料筛选，实验设计(DOE)来优化选择方形扁平无引脚封装(QFN)的封装材料组合，实现了消除MEMS惯性器件封装过程中由于不同材料混合使用和各种材料的膨胀和收缩系数不同，进而引起的应力(机械应力，热应力)附加在MEMS 惯性器件上，导致MEMS惯性器件工作状态发生偏移这一个问题。 
具体实施方式
为了使本发明实现的技术手段、技术特征、发明目的与技术效果易于明白了解，下面进一步阐述本发明。 
一种针对MEMS惯性器件半导体的封装方法，该方法包括如下步骤： 
S1:采用COL(Chip on Lead)的引线框架； 
S2:将大面积金属裸露焊盘通过化学刻蚀或机械冲压方式加工成梳齿状结构； 
S3:针对MEMS惯性器件特性，进行材料筛选； 
S4:实验设计(DOE)优化选择针对MEMS惯性器件方形扁平无引脚封装(QFN)的封装材料。 
本发明能够有效减少了金属裸露焊盘的导热面积，梳齿状结构能够在一定程度上通过形变吸收各种封装材料混合使用时，由于各种材料的膨胀和收缩系数不同，进而引起的应力。这种应力附加在MEMS惯性器件上，会导致MEMS惯性器件工作状态发生偏移。又由于梳齿状结构实际上也能承担起承载芯片的作用，应用COL(Chip on Lead)的引线框架，并不要求改变目前方形扁平无引脚封装(QFN)的标准封装工艺。 
通过改进方形扁平无引脚封装(QFN)所用到的引线框架，解决大面积 金属裸露焊盘的热膨胀系数大，导热系数大，弹性模量高等问题，进而避免了机械应力，热应力对MEMS惯性器件工作状态的影响。通过材料筛选，实验设计(DOE)来优化选择方形扁平无引脚封装(QFN)的封装材料组合，实现了消除MEMS惯性器件封装过程中由于不同材料混合使用和各种材料的膨胀和收缩系数不同，进而引起的应力(机械应力，热应力)附加在MEMS惯性器件上，导致MEMS惯性器件工作状态发生偏移这一个问题。 
综上所述仅为本发明较佳的实施例，并非用来限定本发明的实施范围。即凡依本发明申请专利范围的内容所作的等效变化及修饰，皆应属于本发明的技术范畴。 

Claims (1)

1.一种针对MEMS惯性器件半导体的封装方法，其特征在于：该方法包括如下步骤：
S1:采用COL(Chip on Lead)的引线框架；
S2:将大面积金属裸露焊盘通过化学刻蚀或机械冲压方式加工成梳齿状结构；
S3:针对MEMS惯性器件特性，进行材料筛选；
S4:实验设计(DOE)优化选择针对MEMS惯性器件方形扁平无引脚封装(QFN)的封装材料。
CN201410333741.1A 2014-07-14 2014-07-14 一种针对mems惯性器件半导体的封装方法 Pending CN104091765A (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108292642A (zh) * 2015-11-25 2018-07-17 三菱电机株式会社 电力用半导体装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1314709A (zh) * 2000-03-16 2001-09-26 密克罗奇普技术公司 用于塑料封装的减小应力的引线框
US20070290364A1 (en) * 2006-06-15 2007-12-20 Pavan Gupta Stacked die package for mems resonator system
US20090152691A1 (en) * 2007-12-18 2009-06-18 National Semiconductor Corporation Leadframe having die attach pad with delamination and crack-arresting features
CN102344110A (zh) * 2011-10-31 2012-02-08 嘉盛半导体(苏州)有限公司 微机电系统器件的方形扁平无引脚封装结构及方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1314709A (zh) * 2000-03-16 2001-09-26 密克罗奇普技术公司 用于塑料封装的减小应力的引线框
US20070290364A1 (en) * 2006-06-15 2007-12-20 Pavan Gupta Stacked die package for mems resonator system
US20090152691A1 (en) * 2007-12-18 2009-06-18 National Semiconductor Corporation Leadframe having die attach pad with delamination and crack-arresting features
CN102344110A (zh) * 2011-10-31 2012-02-08 嘉盛半导体(苏州)有限公司 微机电系统器件的方形扁平无引脚封装结构及方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108292642A (zh) * 2015-11-25 2018-07-17 三菱电机株式会社 电力用半导体装置

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Application publication date: 20141008