CN104086555B - New crystal structure Cobalt Phthalocyanine (J-CoPc) nano wire and preparation method thereof - Google Patents
New crystal structure Cobalt Phthalocyanine (J-CoPc) nano wire and preparation method thereof Download PDFInfo
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Abstract
The present invention relates to a kind of new crystal structure Cobalt Phthalocyanine nano wire and preparation method thereof field.Provide a kind of Cobalt Phthalocyanine nano wire, there is J Cobalt Phthalocyanine structure, a diameter of below 150nm.Additionally provide a kind of method preparing described Cobalt Phthalocyanine nano wire, comprise the following steps: a) to introduce phthalocyanine cobalt source material to the heating region in tube furnace；B) in the presence of carrier gas, this phthalocyanine cobalt source material is heated to the highest 600 DEG C；C) by this carrier gas, the Cobalt Phthalocyanine of this distillation is guided to leave this heating region, to growth district；D) at this growth district, Cobalt Phthalocyanine nano wire is obtained.The present invention proposes to utilize vapour deposition process, the Cobalt Phthalocyanine crystal of the nanometer scale that growth obtains, promote and improve physics and the chemical property of Cobalt Phthalocyanine, such as spectral absorptive capacity and carrier mobility etc., the fields such as dyestuff, photoconductive material, liquid crystal, electrochromism, catalysis, solaode can be preferably applied for.
Description
Technical field
The present invention relates to a kind of new crystal structure Cobalt Phthalocyanine nano wire and preparation method thereof.
Background technology
Cobalt Phthalocyanine is a kind of organic functional material, has photoelectric characteristic, light stability and the heat stability of excellence, is widely used in the fields such as dyestuff, photoconductive material, liquid crystal, electrochromism, catalysis, solaode.
Cobalt Phthalocyanine crystal, along with preparation method and the difference of preparation condition, can obtain the Cobalt Phthalocyanine crystal with different-shape feature, different crystal structure, thus show different physics and chemical property.
Generally, the method preparing Cobalt Phthalocyanine crystal includes use Cobalt Phthalocyanine concentrated sulfuric acid solution recrystallization method, physical vaporous deposition, electrochemical deposition method and solution gradient falling temperature method as raw material, additionally include the method (CN103827020A preparing metal phthalocyanine, CN102070642A, CN102484204A, CN102272234A, CN102206863A).These preparation methoies have obtained the Cobalt Phthalocyanine crystal with following crystal formation, including two or more mixing crystal formation χ-CoPc in α-CoPc, β-CoPc, π-CoPc and α, β, π.On pattern, Cobalt Phthalocyanine crystal mainly shows as lamellar, helical form, needle-like, bricked, bar-shaped.These Cobalt Phthalocyanine crystalline sizes are thick, and ultraviolet-visible absorption scope is narrower thus limits its application.It is long to there is growth cycle in method made above, it is difficult to the shortcomings such as industrial-scale production.Cobalt Phthalocyanine crystal in nanoscale regulation and control and growth preparation nanometer scale can promote further and improve its physics and chemical property.
Originally organic vapor phase deposition method is mainly used in the film preparation of OLED luminescent device, and in recent years, some seminar are applied to the research in terms of organic semiconductor nano material organic vapor phase deposition method.But, existing organic vapor phase deposition method, it is impossible to effectively control the growth of Cobalt Phthalocyanine crystal at nanoscale, obtain the Cobalt Phthalocyanine nano wire with specific crystal structure.
Summary of the invention
The invention provides the Cobalt Phthalocyanine nano wire that the organic vapor phase deposition method of a kind of improvement obtains having new crystal structure.
The application proposes to utilize vapour deposition process, the Cobalt Phthalocyanine crystal of the nanometer scale that growth obtains, promote and improve physics and the chemical property of Cobalt Phthalocyanine, such as spectral absorptive capacity and carrier mobility etc., the fields such as dyestuff, photoconductive material, liquid crystal, electrochromism, catalysis, solaode can be preferably applied for.
The invention provides the Cobalt Phthalocyanine nano wire of a kind of new crystal structure.Cobalt Phthalocyanine nano wire provided by the present invention has J-CoPc structure, is different from existing α-CoPc, β-CoPc, π-CoPc and α, β, π the structure of two or more mixing crystal formation χ-CoPc Cobalt Phthalocyanine crystal.
According to one embodiment of the invention, x-ray diffraction pattern (test condition: the Cu of the Cobalt Phthalocyanine nano wire of the present inventionK α 1,0.01 °/step/2s) there is at 2 following θ characteristic peak: 6.870,7.720,8.560,17.400,23.540,26.521.Corresponding to above-mentioned 2 θ, half-peak breadth is respectively 0.294,0.372,0.799,0.984,0.861,0.704；Peak height is respectively 93,202,806,279,97,87；Diffracted intensity is respectively 12.3%, 26.8%, 100%, 34.6%, 12%, 10.8%.
According to yet another embodiment of the present invention, fourier conversion infrared spectrum (FTIR) of the Cobalt Phthalocyanine nano wire of the present invention has following characteristic peak: 731.33cm-1、755.96cm-1、777.94cm-1、1074.91cm-1、1093.96cm-1、1121.12cm-1、1164.12cm-1、1289.72cm-1、1332.73cm-1、1425.92cm-1、1523.58cm-1、1611.44cm-1、1641.53cm-1、2360.07cm-1、2922.54cm-1、3444.96cm-1。
Present invention also offers a kind of method obtaining Cobalt Phthalocyanine nano wire of the present invention, comprise the following steps:
A) phthalocyanine cobalt source material is introduced to the heating region in tube furnace；
B) in the presence of carrier gas, this phthalocyanine cobalt source material is heated to the highest 600 DEG C；
C) by this carrier gas, the Cobalt Phthalocyanine of this distillation is guided to leave this heating region, to growth district；
D) at this growth district, Cobalt Phthalocyanine nano wire is obtained.
Wherein,
In step c), the temperature in Cobalt Phthalocyanine nanowire growth region is 200 DEG C or less.
According to one embodiment of the invention, in step b), the heating-up temperature of phthalocyanine cobalt source material is for being up to about 500 DEG C, preferably up to about 450 DEG C.
According to one embodiment of the invention, phthalocyanine cobalt source material joins in the quartz ampoule in tube furnace, and in this quartz ampoule, phthalocyanine cobalt source material is heated obtains Cobalt Phthalocyanine steam, and this steam is carried to the growth district of Cobalt Phthalocyanine nano wire by carrier gas.This growth district may be located in above-mentioned quartz ampoule, it is also possible to is placed in a sealing manner outside this quartz ampoule.Growth district and heating region direct neighbor, or be spaced apart with a gap.The material filling this gap is preferably heat-barrier material, arranges passage between filler, so that the carrier gas carrying Cobalt Phthalocyanine steam can be passed through.
Opened by a clearance gap according to one embodiment of the invention, heating region and growth district.In the gap, temperature insulating material is filled.Temperature insulating material includes, but are not limited to: calcium silicates, aluminium silicate and other can be used for the temperature insulating material of this area.The distance in gap for example, 30-100mm, preferably 50-80mm.
In heating steps (b), preferably with certain warming room every intensification.Warming room is every being 1-30 DEG C.With this warming room in temperature-rise period, heating rate is preferably 1-5 DEG C/min.
Cobalt Phthalocyanine steam after heating transports growth district by carrier gas.The carrier gas flow velocity in porch is 0.1-2L/min.After heating region and growth district are by gap, the flow velocity of carrier gas is usually 0.5-20L/min.
Cobalt Phthalocyanine steam is transported to growth district and grows.The temperature of growth district below 200 DEG C, preferably less than 100 DEG C, more preferably below 50 DEG C.
The tube wall of growth district grows nano wire.According to a kind of embodiment herein, the vertical tube wall of Cobalt Phthalocyanine nano wire grows.Collect the Cobalt Phthalocyanine nano wire obtained.
Accompanying drawing explanation
The SEM figure of SEM, β of Fig. 1: α-Cobalt Phthalocyanine-Cobalt Phthalocyanine
The SEM figure of the Cobalt Phthalocyanine nano wire of Fig. 2: the present invention
The FTIR collection of illustrative plates of Fig. 3: α-Cobalt Phthalocyanine, β-Cobalt Phthalocyanine, χ-Cobalt Phthalocyanine and π-Cobalt Phthalocyanine
The XRD figure spectrum of Fig. 4: α-Cobalt Phthalocyanine, β-Cobalt Phthalocyanine, χ-Cobalt Phthalocyanine and π-Cobalt Phthalocyanine
The FTIR infrared spectrum of the Cobalt Phthalocyanine nano wire of Fig. 5: the present invention
The XRD figure spectrum of the Cobalt Phthalocyanine nano wire of Fig. 6: the present invention
The SEM figure of the Cobalt Phthalocyanine nano wire of Fig. 7: the present invention
The SEM figure of the Cobalt Phthalocyanine nano wire of Fig. 8: the present invention
Detailed description of the invention
Cobalt Phthalocyanine molecular structure is as follows:
The Cobalt Phthalocyanine nano wire that the present invention provides has J-type structure, is expressed as J-CoPc.This Cobalt Phthalocyanine nano wire is blue, and diameter is in nanometer scale, and usual average diameter is under 150nm, under preferably 120nm.The length of this Cobalt Phthalocyanine nano wire bundle is usually more than 10mm.
In one embodiment of the invention, x-ray diffraction pattern (test condition: the Cu of the Cobalt Phthalocyanine nano wire of the present inventionK α 1,0.01 °/step/2s) there is at 2 following θ characteristic peak: 6.870 °, 7.720 °, 8.560 °, 17.400 °, 23.540 °, 26.521 °.Corresponding respectively to above-mentioned 2 θ, half-peak breadth is respectively 0.294,0.372,0.799,0.984,0.861,0.704；Corresponding respectively to above-mentioned 2 θ, peak height is respectively 93,202,806,279,97,87；Corresponding respectively to above-mentioned 2 θ, diffracted intensity is respectively 12.3%, 26.8%, 100%, 34.6%, 12%, 10.8%.
In another embodiment of the present invention, the FTIR collection of illustrative plates of the Cobalt Phthalocyanine nano wire of the present invention has following characteristic peak: 731.33cm-1、755.96cm-1、777.94cm-1、1074.91cm-1、1093.96cm-1、1121.12cm-1、1164.12cm-1、1289.72cm-1、1332.73cm-1、1425.92cm-1、1523.58cm-1、1611.44cm-1、1641.53cm-1、2360.07cm-1、2922.54cm-1、3444.96cm-1。
Fig. 1 shows the SEM figure of α-CoPc, β-CoPc.The SEM of the Cobalt Phthalocyanine nano wire that the present invention obtains is as shown in Figure 2.The FTIR collection of illustrative plates of α-CoPc, β-CoPc, χ-CoPc and π-CoPc and XRD figure spectrum are respectively displayed in Fig. 3 and Fig. 4.
The invention provides the vapour deposition process preparing Cobalt Phthalocyanine nano wire, comprise the following steps:
A) phthalocyanine cobalt source material is introduced to the heating region in tube furnace；
B) in the presence of carrier gas, heat this phthalocyanine cobalt source material and obtain Cobalt Phthalocyanine gas to the highest 600 DEG C；
C) by this carrier gas, guide this Cobalt Phthalocyanine gas to Cobalt Phthalocyanine nanowire growth region；
D) at this growth district, growth obtains Cobalt Phthalocyanine nano wire.
Wherein,
In step c), the temperature in Cobalt Phthalocyanine nanowire growth region is 200 DEG C or following temperature.
In preparation method, the heating region first phthalocyanine cobalt source material being incorporated in tube furnace.This tube furnace can be such as single temperature section tube furnace or multiple temperature sections tube furnace, as long as wherein there being a warm section can heat phthalocyanine cobalt source material.Preferably, in the sealing pipe that phthalocyanine cobalt source material is placed in tube furnace.In the pipe that the materials such as this sealing pipe can be quartz ampoule, it is also possible to be not affect the pipe that crystalline other material any of phthalocyanine cobalt source material is made, and includes, but not limited to rustless steel, silicon, aluminium oxide, pottery, glass are formed.These materials can also be placed in sealing pipe with the form of substrate, such as, in quartz ampoule, form heating region, and it places phthalocyanine cobalt source material.
After adding phthalocyanine cobalt source material, in this sealing pipe, it is passed through carrier gas.This carrier gas for example, nitrogen (N2), argon (Ar) or helium (He).In the presence of this carrier gas, heating phthalocyanine cobalt source material is to preset target temperature.This target temperature is the temperature that can obtain Cobalt Phthalocyanine sublimation gases, is up to about 600 DEG C, preferably up to 500 DEG C, more preferably up to 480 DEG C, most preferably up to 450 DEG C.In heating process, in the way of ladder-elevating temperature, preferably it is heated to target temperature.During ladder-elevating temperature, warming room is every being 1 DEG C-30 DEG C, and the warming room of preferably 1,2,5,8,10,15,20,25,30 DEG C is every intensification；Heating rate is 1-5 DEG C/min, for example, 2,3,4 DEG C/min.After being heated to preset target temperature, this target temperature is kept to continue for some time.
The Cobalt Phthalocyanine gas that distillation obtains passes through carrier gas by fast transportation to Cobalt Phthalocyanine nanowire growth region.In transportation, fast turn-around Cobalt Phthalocyanine sublimation gases, it is to avoid Cobalt Phthalocyanine nano wire is at the outgrowth Cobalt Phthalocyanine crystal of growth district.Preferably, growth district adjoins heating region.Growth district is away from heating region.Preferably, there is the gap in the gap in the gap of certain interval, such as 30-120mm, preferably 40-100mm, more preferably 50-80mm between growth district and heating region.In the gap, temperature insulating material can be filled.Temperature insulating material includes, but not limited to calcium silicates, aluminium silicate.Providing holes in this temperature insulating material, so that guiding the carrier gas of Cobalt Phthalocyanine gas to pass through.The number in hole and diameter can be arranged as required to.Such as, the number in hole is 1-12；A diameter of 3-8mm in hole.Preferably, by the setting in hole so that the flow velocity of carrier gas is compared with the flow velocity (L/min) of porch and is greatly improved.Thus so that delivery Cobalt Phthalocyanine sublimation gases can quickly arrive growth district.Other region, the most one or more middle temperature areas can also be there are between growth district and heating region.In this, the temperature of temperature area is usually the temperature province of less than 300 DEG C, such as 200-300 DEG C.In this, temperature area can be the temperature province of 100-200 DEG C.The Cobalt Phthalocyanine crystal of the present invention is preferably less than 200 DEG C, and preferably shorter than 100 DEG C, the growth district growth of more preferably less than 50 DEG C, most preferably in room temperature region growth.Between middle temperature area or between middle temperature area and other region, it is also possible to there is gap as required, wherein fill temperature insulating material.Providing holes in this temperature insulating material, to enable to guide the carrier gas of Cobalt Phthalocyanine gas to pass through.
According to one embodiment of the invention, the tube furnace of three temperature sections is used to prepare Cobalt Phthalocyanine nano wire.It is with single temperature section tube furnace scheme difference: include three warm sections, high temperature section, such as 400-600 DEG C, preferably 400-500 DEG C；Middle-temperature section, such as 100-300 DEG C；Low-temperature zone, such as 50-200 DEG C；And room temperature section, such as 10-50 DEG C, preferably 20-35 DEG C.Phthalocyanine cobalt source material, after high temperature section subliming by heating, grows Cobalt Phthalocyanine nano wire by the Cobalt Phthalocyanine of carrier gas delivery distillation to middle-temperature section, low-temperature zone and room temperature section, and wherein the temperature of middle-temperature section and low-temperature zone freely changes；High temperature section, middle-temperature section, low-temperature zone and room temperature section are provided adjacent to, and separate with temperature insulating material.
During preparing Cobalt Phthalocyanine nano wire, can carry out at ambient pressure.This prepares Cobalt Phthalocyanine nano wire process, it is also possible to as required, in vacuum or add pressure and carry out.Preparation whole during, the flow of carrier gas needs to keep stable.The carrier gas intake in porch is generally 0.1L/min-2L/min, preferably 0.2L/min-0.5L/min.During guiding Cobalt Phthalocyanine sublimation gases, preferably the flow (speed) of carrier gas is 0.5L/min-20L/min, preferably the flow of carrier gas be the flow that flow is 1.5L/min-10L/min or carrier gas of 1/min-15L/min, more preferably carrier gas be 2L/min-8L/min.Preferably carrier gas guiding Cobalt Phthalocyanine sublimation gases is quickly through each warm area, the not region growing crystal outside growth district.
Before the method for the present invention is additionally included in introducing phthalocyanine cobalt source material, cleans the step of this quartz ampoule, include, but are not limited to:
(1) use organic solvent-acetone, dehydrated alcohol, deionized water to clean quartz ampoule and substrate, remove the impurity on quartz ampoule and substrate.
(2) high pure nitrogen gas is used to dry up impurity remaining on quartz ampoule and substrate and water.
(3) use before preparation vacuum system to quartz ampoule cavity evacuation, to remove the impurity such as air in quartz ampoule.
According to one embodiment of the invention, the method preparing Cobalt Phthalocyanine nano wire comprises the following steps:
A) phthalocyanine cobalt source material is introduced the heating region in tube furnace,
B) in the presence of carrier gas, phthalocyanine cobalt source material subliming by heating is up to 500 DEG C,
C) by carrier gas, the Cobalt Phthalocyanine of distillation is carried to the growth district adjacent with heating region,
At growth district, Cobalt Phthalocyanine molecular growth becomes nano wire, and wherein the temperature of this growth district is less than 200 DEG C, preferably shorter than 150 DEG C, further preferably less than 100 DEG C, and more preferably less than 50 DEG C, still more preferably room temperature.
According to an embodiment, the XRD diffraction spectra of the Cobalt Phthalocyanine nano wire of the present invention has a following characteristic peaks:
The Cobalt Phthalocyanine nano wire that the present invention obtains is after long-time preservation, and its physicochemical properties are constant.
Embodiment 1:
The most cleaned quartz ampoule and quartz substrate, and connect install experimental facilities after, regulation experiment condition be: gas path pipe is PU1065 flexible pipe, and the pressure in quartz ampoule cavity is normal pressure, and delivery gas is N2, use the three temperature sections all can the open-close type tube furnace of independent temperature control.Phthalocyanine cobalt source material is placed in the middle position of this tube furnace high temperature section, and other two temperature section is not heated.Regulation and control N2The flow of porch is 0.4L/min.The most first lead to the N of a period of time2, afterwards phthalocyanine cobalt source material is heated, first heating phthalocyanine cobalt source material is to 400 DEG C, is warming up to 450 DEG C with the velocity step ladder of 1-5 DEG C/min, reaches 450 DEG C and be incubated 190min.Carrier gas guides Cobalt Phthalocyanine sublimation gases by middle-temperature section, grows to low-temperature zone and at this.The temperature of this growth district is room temperature.After being incubated, stopping heating, the preparation continuing ventilation 30min, J-CoPc nano wire terminates.
The Cobalt Phthalocyanine nano wire obtained uses FTS-40 (production of BIORAD company of the U.S.) carry out infrared test (test condition: use pellet technique), and the infared spectrum obtained is as shown in Figure 5.This Cobalt Phthalocyanine nano wire has following characteristic peaks in FTIR collection of illustrative plates: 731.33cm-1,755.96cm-1,777.94cm-1,1074.91cm-1,1093.96cm-1,1121.12cm-1,1164.12cm-1,1289.72cm-1,1332.73cm-1,1425.92cm-1,1523.58cm-1,1611.44cm-1,1641.53cm-1,2360.07cm-1,2922.54cm-1,3444.96cm-1.
Embodiment 2:
On the basis of embodiment 1, change experiment condition: using single temperature section open tubular furnace of temperature control able to programme, with above-mentioned heating mode, be warming up to 450 DEG C, be incubated 220min, carrier gas guides Cobalt Phthalocyanine sublimation gases to the growth district adjacent with heating region.This growth district and the heating region quartzy interstitial area by 100mm.Quartz interstitial area arranges the hole of multiple a diameter of 5mm.Behind spacer, the flow velocity of carrier gas improves to 3L/min.After heating terminates, continuing ventilation 30min, then stop ventilation, Cobalt Phthalocyanine nano wire grows at the growth district of 50 DEG C.Collect J-CoPc nano wire.
The XRD test instrunment that model is TTRIII produced purchased from Rigaku Co., Ltd. is used to carry out testing (test condition: Cu the Cobalt Phthalocyanine nano wire obtainedK α 1,0.01°/step/2s).XRD diffraction spectra is as shown in Figure 6.
The XRD spectrum of the Cobalt Phthalocyanine nano wire of the present invention has a following characteristic peaks:
Embodiment 3:
Under the experiment condition of embodiment 1, change experiment condition: be evacuated to less than 9Pa to quartz ampoule cavity before experiment heating, then carry out logical N2Gas makes the pressure in pipe be normal pressure.In experimentation, when reaching target temperature 450 DEG C, it is incubated 300min.Carrier gas guides Cobalt Phthalocyanine sublimation gases to the growth district adjacent with heating region.This growth district and heating region by the quartzy interval section of 50mm every.Quartz spacer arranges the hole of multiple a diameter of 5mm.Stop heating, Continuous aeration 30min.Cobalt Phthalocyanine nano wire grows at the growth district being in room temperature.Stopping ventilation, the preparation of J-CoPc nano wire terminates.(test condition: before test, sample power is that the sputter of 500VA carries out metal spraying (gold) 300s to the SEM figure of obtained J-CoPc nano wire；Instrument is FEI Quanta200) as shown in Figure 7.
Embodiment 4:
Changing experiment condition: backing material is simple glass, temperature and mode of heating repeat embodiment 1, experience the temperature-rise period of 450-485 DEG C, and temperature reaches 485 DEG C and keeps 190min.J-CoPc nano wire grows at the growth district being in 100 DEG C.Stopping heating, preparation terminates, and collects Cobalt Phthalocyanine nano wire.
Embodiment 5:
Change experiment condition: change temperature value and mode of heating, repeat embodiment 1.Heat up experience 460 DEG C, 480 DEG C, 490 DEG C, 493 DEG C, 494 DEG C, and the temperature-rise period of 495 DEG C keeps 240min at 495 DEG C.J-CoPc nano wire grows at the growth district being in 30 DEG C.Stopping heating, the preparation of J-CoPc nano wire terminates.
Embodiment 6:
Change experiment condition: in addition to the temperature value and mode of heating of single temperature section open-close type tube furnace, repeat embodiment 2.Single temperature section open-close type tube furnace experiences 460 DEG C, and 480 DEG C, 490 DEG C, 493 DEG C, 494 DEG C, the temperature-rise period of 495 DEG C, temperature reaches 495 DEG C and is incubated 240min.Stop heating, continue ventilation 30min.J-CoPc nano wire grows at the growth district being in 180 DEG C.Stopping ventilation, the preparation of J-CoPc nano wire terminates.The SEM of obtained J-CoPc nano wire schemes as shown in Figure 8.
The Cobalt Phthalocyanine crystal of the nanometer scale with J-type structure that present invention growth obtains, promote and improve physics and the chemical property of Cobalt Phthalocyanine, such as spectral absorptive capacity and carrier mobility etc., the fields such as dyestuff, photoconductive material, liquid crystal, electrochromism, catalysis, solaode can be preferably applied for.
Utilize the method growing Cobalt Phthalocyanine nano wire that the present invention is previously mentioned, it is not necessary to vacuum or pressurized conditions can produce.The method is easy and simple to handle, with short production cycle, and efficiency is high, grows hardly in other region except growth district, and obtained Cobalt Phthalocyanine nano wire character is superior, promotes and improve physics and the chemical property of Cobalt Phthalocyanine.Meanwhile, the present invention prepares the method for Cobalt Phthalocyanine nano wire and can be also used for phthalocyanine, the preparation of the organic semiconductor nano material such as metal phthalocyanine and porphyrin.
In a word, above-described embodiment is for example of the present invention is described, and is not the restriction to embodiment of the present invention.For others skilled in the art, change or the variation of other multi-forms can also be made on the basis of the above description.Here cannot all of embodiment be given exhaustive.Every belong to obvious change that technical scheme drawn or the variation example still in protection scope of the present invention.
Claims (5)
1. a Cobalt Phthalocyanine nano wire, it is characterised in that there is J-Cobalt Phthalocyanine structure, a diameter of 150nm
Below；The x-ray diffraction pattern of described Cobalt Phthalocyanine nano wire, test condition: CuKα1,
0.01 °/step/2s, there is at 2 following θ characteristic peak: 6.870 °, 7.720 °, 8.560 °, 17.400 °,
23.540°、26.521°；And corresponding to above-mentioned 2 θ, half-peak breadth is respectively 0.294,0.372,0.799,
0.984、0.861、0.704；Correspond respectively to above-mentioned 2 θ, diffracted intensity is respectively 12.3%, 26.8%,
100%, 34.6%, 12%, 10.8%.
Cobalt Phthalocyanine nano wire the most according to claim 1, it is characterised in that there is following fourier and turn
Change infrared spectrum (FTIR) characteristic peak: 731.33cm-1、755.96cm-1、777.94cm-1、
1074.91cm-1、1093.96cm-1、1121.12cm-1、1164.12cm-1、1289.72cm-1、1332.73
cm-1、1425.92cm-1、1523.58cm-1、1611.44cm-1、1641.53cm-1、2360.07cm-1、
2922.54cm-1、3444.96cm-1。
3. prepare a method for Cobalt Phthalocyanine nano wire as described in claim 1 or claim 2, its
It is characterised by, comprises the following steps:
A) phthalocyanine cobalt source material is introduced to the heating region in tube furnace；
B) in the presence of carrier gas, heat this phthalocyanine cobalt source material and obtain Cobalt Phthalocyanine gas to the highest 600 DEG C；
C) by this carrier gas, guide this Cobalt Phthalocyanine gas to Cobalt Phthalocyanine nanowire growth region；
D) at this growth district, growth obtains Cobalt Phthalocyanine nano wire,
Wherein, the temperature in Cobalt Phthalocyanine nanowire growth region is 200 DEG C or following temperature；In step
B) in, heating in the way of ladder-elevating temperature, warming room is divided into 1 DEG C-30 DEG C；And heating rate is
1-5℃/min。
4. the method for claim 3, it is characterised in that arrange between heating region and growth district
The gap of 50-100mm；Wherein arrange in gap in temperature insulating material, and temperature insulating material and passage is set.
5. the method for claim 3, it is characterised in that the carrier gas flow velocity in porch is 0.1-2L/min.
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| CN201410279515.XA CN104086555B (en) | 2014-06-20 | 2014-06-20 | New crystal structure Cobalt Phthalocyanine (J-CoPc) nano wire and preparation method thereof |
| HK15103442.1A HK1202869A1 (en) | 2014-06-20 | 2015-04-08 | New-crystal-structural cobalt phthalocyanine (j-copc) nano-wires and preparation method thereof (j-copc) |
| PCT/CN2015/081983 WO2015192810A1 (en) | 2014-06-20 | 2015-06-19 | Crystal structure cobalt phthalocyanine (j-copc) nanowire and method for preparation thereof |
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| CN104610269B (en) * | 2015-01-23 | 2017-08-15 | 昆明学院 | New crystal structure Nickel Phthalocyanine（ω‑NiPc）Nano wire and preparation method thereof |
| CN105601637B (en) * | 2016-01-18 | 2018-06-26 | 昆明学院 | The preparation method of tetraphenylporphyrin zinc nano material that a kind of spectral absorptive capacity is strong, carrier mobility is high |
| CN111087404A (en) * | 2019-12-30 | 2020-05-01 | 昆明学院 | P-type and N-type organic semiconductor eutectic material based on physical vapor deposition and preparation method |
| CN113135926A (en) * | 2021-04-23 | 2021-07-20 | 昆明学院 | Novel crystal structure indium phthalocyanine nanowire and preparation method thereof |
| CN113956261A (en) * | 2021-09-16 | 2022-01-21 | 昆明学院 | Novel crystal structure chlorinated gallium phthalocyanine nanobelt and preparation method thereof |
| CN113777137A (en) * | 2021-09-24 | 2021-12-10 | 昆明学院 | Gas sensor based on chromium phthalocyanine monomolecular layer film and preparation method and application thereof |
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| US9415106B2 (en) * | 2011-09-26 | 2016-08-16 | Pohang University Of Science And Technology Industry Academy Cooperation Corps | α-form zinc-phthalocyanine nanowires having enhanced water solubility and water dispersibility, composite of an α-form zinc-phthalocyanine nanowire/phenothiazine, and method for preparing same |
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