CN104079840B - Image sensor - Google Patents
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- CN104079840B CN104079840B CN201310103956.XA CN201310103956A CN104079840B CN 104079840 B CN104079840 B CN 104079840B CN 201310103956 A CN201310103956 A CN 201310103956A CN 104079840 B CN104079840 B CN 104079840B
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- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 14
- 230000005611 electricity Effects 0.000 description 12
- 230000008878 coupling Effects 0.000 description 9
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- 238000005859 coupling reaction Methods 0.000 description 9
- 230000006399 behavior Effects 0.000 description 8
- 238000002955 isolation Methods 0.000 description 3
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- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention discloses an image sensor, which comprises a pixel array, a reading circuit and a voltage drop control circuit, wherein the pixel array is formed by multiple rows and columns of photosensitive elements; the reading circuit is coupled to the pixel array, the reading circuit comprises multiple columns of amplifiers, wherein each column of amplifiers are respectively coupled to one column of photosensitive elements of the pixel array for generating corresponding sensing voltage; the voltage drop control circuit is coupled between the reading circuit and a power line for isolating supply voltage drop generated by the power line for the reading circuit, so that each column of amplifiers of the reading circuit can receive regional voltage with the same size through the voltage drop control circuit, wherein the multiple columns of amplifiers of the reading circuit are coupled to the voltage drop control circuit.
Description
Technical field
The present invention is, with regard to a kind of image sensor, especially in regard to one kind supply voltage drop (IR-drop) can be prevented effectively from
Image sensor.
Background technology
Image sensor (Image Sensor) has become the indispensable some of electronic product now, from mobile phone camera mould
Block, mobile computer network camera, digital camera, video camera have its related application to safe monitoring system etc..
Image sensor produces image by pel array.Pel array is by the photo-sensitive cell institute of multiple rows and multiple row
Composition, each photo-sensitive cell is clapped to receive light and produce the voltage (electric charge) proportional to light intensity to reflect
The image of the object taken the photograph.
However, due to the resolution requirements more and more higher of image sensor, therefore the line number amount and number of columns of pel array
Also lifted therewith.When the number of columns of pel array is lifted, to be coupled to the rear end reading circuit power supply of pel array
The length of power line also must be extended, and then produce the problem of supply voltage drop (IR-drop) that can not be ignored so that read
Each identical column amplifier may produce different behaviors in circuit, and then lose produced image quality.
Accordingly, it would be desirable to a kind of image sensor for being prevented effectively from supply voltage drop.
The content of the invention
An embodiment of the invention, a kind of image sensor, including pel array, reading circuit and pressure drop control
Circuit.Pel array is made up of multiple rows with the photo-sensitive cell of multiple row.Reading circuit is coupled to pel array, including multiple
Column amplifier, wherein each column amplifier is respectively coupled to a row photo-sensitive cell of pel array, to produce a corresponding sensing
Voltage.Pressure drop control circuit is coupled between the reading circuit and a power line, to be produced by reading circuit isolation power line
Raw supply voltage drop so that each column amplifier of reading circuit receives equal-sized area by pressure drop control circuit
The column amplifier of domain voltage, wherein reading circuit is both coupled to pressure drop control circuit.
According to another embodiment of the present invention, a kind of image sensor, including pel array, reading circuit and pressure drop control
Circuit processed.Pel array is made up of multiple rows with the photo-sensitive cell of multiple row.Reading circuit is coupled to pel array, including many
Individual column amplifier, wherein each column amplifier is respectively coupled to a row photo-sensitive cell of pel array, to produce a corresponding sense
Survey voltage.Pressure drop control circuit include multiple transistor coupled in parallel between reading circuit and a power line, to for reading
Supply voltage drop produced by circuit isolation power line so that each column amplifier of reading circuit passes through pressure drop control circuit
Equal-sized region voltage is received, the column amplifier of wherein reading circuit is both coupled to one of transistor.
Description of the drawings
Fig. 1 is to show the image sensor block diagram described in an embodiment of the invention.
Fig. 2 is the partial circuit diagram for showing the image sensor described in an embodiment of the invention.
Fig. 3 is the partial circuit diagram of the image sensor for showing described according to another embodiment of the present invention.
Fig. 4 is the partial circuit diagram for showing the image sensor described in still another embodiment of the invention.
Fig. 5 is the partial circuit diagram for showing the image sensor described in still another embodiment of the invention.
Specific embodiment
Manufacture, method of operating, target and advantage to enable the present invention becomes apparent, several preferable enforcements cited below particularly
Example, and coordinate institute's accompanying drawings, it is described in detail below：
Embodiment：
Fig. 1 is to show the image sensor block diagram described in an embodiment of the invention.It should be noted that being letter
Change explanation, block and element related to the present invention is only shown in Fig. 1.Understood as being familiar with this those skilled in the art, image sensing
Device is worked as may include that other are not depicted in the block in Fig. 1 and element, therefore the present invention is not limited to the content shown in Fig. 1.
An embodiment of the invention, image sensor 100 can at least include pel array 110, reading circuit 120 with
And power supply circuit 130.Pel array 110 can be made up of multiple row (column) with the photo-sensitive cell of multiple rows (row),
To receive light and produce the voltage (electric charge) proportional to light intensity, to the image for reflecting the object being taken.
Reading circuit 120 is coupled to pel array 110, and including multiple column amplifiers (column amplifier) 120- (1),
120- (2), 120- (3) ... 120- (n-1) and 120- (n), wherein each column amplifier has identical circuit structure, and divide
A row photo-sensitive cell of pel array 110 is not coupled to, to produce corresponding sensing voltage.The coupling of power supply circuit 130
Reading circuit 120 is connected to, to supply power supply to reading circuit 120, and the supply voltage produced by power line can be avoided to drop
(IR-drop)。
Each column amplifier 120- (1) of reading circuit 120,120- (2), 120- (3) ... 120- (n-1) and 120- (n)
It is both needed to receive power supply from power line.Due to each column amplifier 120- (1), 120- (2), 120- (3) ... 120- (n-1) and 120-
N () has identical circuit structure and from same power line reception power supply, therefore ideally, each node of each column amplifier
Voltage must be identical so that each column amplifier can have consistent operation behavior.However, when the column amplifier of reading circuit
During quantity a lot (in other words, the size of pel array is very big), the length of power line also must be extended, and then generation is not allowed to neglect
Depending on supply voltage drop (IR-drop) problem.For example, apart from the power supply electricity received by two farthest column amplifiers
Pressure size may be different.Consequently, it is possible to each identical column amplifier may produce different behaviors in reading circuit,
And then the image quality produced by losing.
Fig. 2 is the partial circuit diagram for showing the image sensor described in an embodiment of the invention.In order to solve electricity
The problem of source voltage drop (IR-drop), the power supply circuit 130 of image sensor 100 proposed by the invention is except including
Beyond power line, pressure drop control circuit is further comprised.An embodiment of the invention, each row of reading circuit 120 are put
Big device is both coupled to pressure drop control circuit, to receive power supply, wherein pressure drop control electricity from power line by pressure drop control circuit
Road can completely cut off supply voltage drop (IR-drop) produced by power line.Paragraphs below will be by multiple different embodiments to this
Bright proposed pressure drop control circuit makees more detailed introduction.
An embodiment of the invention, power supply circuit 130 may include pressure drop control circuit 230 and power line 250.
Pressure drop control circuit 230 includes the transistor of n coupled in parallel, and quantity n of wherein transistor is equal to the row of reading circuit and puts
Quantity n of big device, n is a positive integer.Consequently, it is possible to the column amplifier of reading circuit can be respectively couple to a corresponding crystal
Pipe, this transistor is supplied to region voltage to produce a region voltage of non-transformer voltage drop (IR-drop free)
Corresponding column amplifier.In other words, each column amplifier of reading circuit can receive size phase by pressure drop control circuit 230
Deng region voltage.In presently preferred embodiments of the present invention, the plurality of transistor of pressure drop control circuit 230 can be N-type gold
Category oxide semi conductor transistor.
As shown in Fig. 2 power line 250 is coupled to pressure drop control circuit 230, to supply system operating voltage VDD.Crystal
Pipe T (i) is coupled to power line 250 including one first pole, and one second pole is coupled to column amplifier 220- (i), and wherein i is one
Positive integer.Similarly, transistor T (i+1) is coupled to power line 250 including one first pole, and one second pole is coupled to row and puts
Big device 220- (i+1).Additionally, transistor T (i) is both coupled to reference voltage V with a control pole of transistor T (i+1)G.Row are put
Big device 220- (i) has substantially the same circuit structure, wherein column amplifier 220- (i) and 220- (i+1) with 220- (i+1)
An operational amplifier can respectively be included.Operational amplifier here is by taking differential amplifier as an example, to be input into a pair of differential respectively
End inp (i) and inn (i) and inp (i+1) and inn (i+1).Each pair of differential input terminal may be coupled to pel array wherein
One row, to sense the voltage swing produced by photo-sensitive cell.Operational amplifier is more respectively by output end out (i) and out (i
+ 1) output sensing voltage is to next stage circuit (for example a, analog-to-digital converter).
An embodiment of the invention, each transistor of pressure drop control circuit 230 can be according to reference voltage VGWith each row
Constant-current source (for example, Itail (i) and Itail (i+1)) in amplifier supplies end points (for example, Np (i) and Np in supply voltage
(i+1) region voltage of non-transformer voltage drop (IR-drop free)) is produced.Due to reference voltage VGIt is to be provided directly to respectively
The control pole of transistor, therefore refers to voltage VGWire on electric current it is almost nil, therefore without Current Voltage drop；And electricity
The voltage of source voltage supply end points (for example, Np (i) and Np (i+1)) is to deduct a threshold voltage for reference voltage, so also without
The problem of Current Voltage drop, meanwhile, the electric current in each column amplifier is substantially the same, therefore, supply end points (example in supply voltage
Such as, Np (i) and Np (i+1)) produced by region voltage also can be a constant voltage, will not be subject to what power line 250 be supplied
The supply voltage drop of system operating voltage VDD affects.Consequently, it is possible to each node voltage inside each column amplifier of reading circuit
Can be consistent, operation behavior also can be consistent, efficiently solves because the supply voltage drop of system operating voltage VDD causes image quality
The problem lost.
It should be noted that in embodiments of the invention, a base stage of each transistor of pressure drop control circuit 230 can be entered
One step is coupled to source electrode (the as above first or second pole) or earth point, wherein when base stage is coupled to source electrode, can eliminate
The matrix effect (body effect) of transistor.Additionally, in this embodiment, because each column amplifier of reading circuit is only needed
Additionally one transistor of coupling, comparatively simple in circuit design.
It should be noted that to simplify explanation, the two of which transistor of pressure drop control circuit 230 is only shown in Fig. 2
And the circuit diagram of two corresponding column amplifiers, and this those skilled in the art is familiar with when content that can be according to disclosed in Fig. 2 is pushed away easily
Derive coupling and the mode of operation of other transistors of pressure drop control circuit 230.Furthermore it is noted that the row of the present invention
Amplifier is not limited to the circuit structure shown in Fig. 2.Understood as being familiar with this those skilled in the art, each row of reading circuit amplify
Device can have various different embodiments, therefore the circuit shown in Fig. 2 is only the example for aiding in illustrating, and be not used to limit this
Bright scope.
Fig. 3 is the partial circuit diagram of the image sensor for showing described according to another embodiment of the present invention.In this enforcement
In example, power supply circuit includes power line 350 and pressure drop control circuit 330.Pressure drop control circuit 330 may include that m is put down
The transistor of row coupling, wherein quantity n of quantity m of transistor less than the column amplifier of reading circuit.Therefore, multiple row amplify
Device can share a transistor, the transistor to produce the region voltage of non-transformer voltage drop (IR-drop free), and
Region voltage is supplied to into corresponding column amplifier.In other words, each column amplifier of reading circuit can be by pressure drop control electricity
Road 330 receives equal-sized region voltage.In presently preferred embodiments of the present invention, pressure drop control circuit 330 it is the plurality of
Transistor can be N-type metal oxide semiconductor transistor.
Circuit shown in Fig. 3 is similar to Fig. 2, and its difference is only that transistor T ' the second poles (i) are put while being coupled to row
Big device 320- (i) and 320- (i+1), to produce non-transformer voltage with Np (i+1) respectively at supply voltage supply end points Np (i)
One region voltage of drop (IR-drop free).Because the circuit shown in Fig. 3 is similar to Fig. 2, therefore circuit other blocks retouch
State and refer to Fig. 2, and repeat no more in this.
Embodiments in accordance with the present invention, amplify because each transistor of pressure drop control circuit 330 can be shared on multiple row
Between device, therefore, compared to the embodiment shown in Fig. 2, the embodiment shown in Fig. 3 can further reduction circuit area.Additionally, in
In this embodiment, due to reference voltage VGIt is the control pole for being provided directly to each transistor, therefore refers to voltage VGWire on
Electric current is almost nil, therefore without Current Voltage drop；And the electricity of supply voltage supply end points (for example, Np (i) and Np (i+1))
Pressure is to deduct a threshold voltage for reference voltage, so also without the problem of Current Voltage drop, meanwhile, the electric current in each column amplifier
It is substantially the same, therefore, supplying the region voltage produced by end points (for example, Np (i) and Np (i+1)) in supply voltage also can be
One constant voltage, the supply voltage drop of the system operating voltage VDD that will not be supplied by power line 350 affects.Consequently, it is possible to
Each node voltage inside each column amplifier of reading circuit can be consistent, and operation behavior also can be consistent, efficiently solves because being
The supply voltage drop of system operating voltage VDD causes the problem that image quality is lost.
It is noted that to simplify explanation, one of transistor of pressure drop control circuit 330 is only shown in Fig. 3 with
And the circuit diagram of two corresponding column amplifiers, and this those skilled in the art is familiar with when content that can be according to disclosed in Fig. 3 is derived easily
Go out coupling and the mode of operation of other transistors of pressure drop control circuit 330.Furthermore it is noted that in the present invention its
In its embodiment, also can be by the same transistor of the shared pressure drop control circuit of two or more column amplifier.Therefore, it is familiar with this
Those skilled in the art derives easily other possible changes when content that can be according to disclosed in Fig. 3, and the circuit shown in Fig. 3 is only aided in
The example of explanation, and be not used to limit the scope of the present invention.
Furthermore it is noted that the column amplifier of the present invention is not limited to the circuit structure shown in Fig. 3.As being familiar with
This those skilled in the art is understood that each column amplifier of reading circuit can have various different embodiments, therefore the electricity shown in Fig. 3
Road is only the example for aiding in illustrating, and is not used to limit the scope of the present invention.
Fig. 4 is the partial circuit diagram for showing the image sensor described in still another embodiment of the invention.In this reality
In applying example, power supply circuit includes power line 450 and pressure drop control circuit 430.Pressure drop control circuit 430 may include n groups
Group's quantity n of the transistor of coupled in parallel, wherein transistor is equal to quantity n of the column amplifier of reading circuit.Such one
Come, each column amplifier of reading circuit may be coupled to one group of corresponding transistor, and the group transistor is to produce non-transformer voltage
One region voltage of drop (IR-drop free), and region voltage is supplied to into corresponding column amplifier.In other words, reading circuit
Each column amplifier equal-sized region voltage can be received by pressure drop control circuit 430.In the preferable reality of the present invention
In applying example, the plurality of transistor of pressure drop control circuit 430 can be N-type metal oxide semiconductor transistor.
Circuit shown in Fig. 4 is similar to Fig. 2, and its difference is only that each column amplifier may be coupled to two crystal for repeatedly connecing
Pipe.For example, the first pole of transistor T1 (i) may be coupled to power line 450, and the second pole of transistor T1 (i) may be coupled to
First pole of transistor T2 (i), and the second pole of transistor T2 (i) may be coupled to column amplifier 420- (i).Similarly, crystal
First pole of pipe T1 (i+1) may be coupled to power line 450, and second pole of transistor T1 (i+1) may be coupled to transistor T2 (i+1)
The first pole, and second pole of transistor T2 (i+1) may be coupled to column amplifier 420- (i+1).Additionally, transistor T1 (i) with
One control pole of transistor T1 (i+1) is both coupled to reference voltage VG1, and a control of transistor T2 (i) and transistor T2 (i+1)
Pole processed is both coupled to reference voltage VG2.Because the circuit shown in Fig. 4 is similar to Fig. 2, therefore the description of circuit other blocks can join
Examine to Fig. 2, and repeat no more in this.
Embodiments in accordance with the present invention, due to reference voltage VG1With VG2It is the control pole for being provided directly to each transistor, and
It is steady state value to flow through the electric current in each column amplifier, therefore, supply end points (for example, Np (i) and Np (i+1)) institute in supply voltage
The region voltage of generation also can be a constant voltage, the power supply of the system operating voltage VDD that will not be supplied by power line 450
Voltage drop affects.Consequently, it is possible to each node voltage inside each column amplifier of reading circuit can be consistent, operation behavior also can
Unanimously, efficiently solve the problems, such as because the supply voltage drop of system operating voltage VDD causes image quality to lose.
Embodiments in accordance with the present invention, by the transistor for repeatedly connecing as shown in Figure 4, pressure drop control circuit 430 can bear
Power line supply voltage drop can be greater than only coupling one-transistor, therefore completely cut off supply voltage drop ability can compare
It is good.
It should be noted that to simplify explanation, wherein two group transistors of pressure drop control circuit 430 are only shown in Fig. 4
And the circuit diagram of two corresponding column amplifiers, and this those skilled in the art is familiar with when content that can be according to disclosed in Fig. 4 is pushed away easily
Derive coupling and the mode of operation of other transistors of pressure drop control circuit 430.Furthermore it is noted that in the present invention's
In other embodiments, also can be by mode as shown in Figure 3, by the shared pressure drop control circuit of two or more column amplifiers
Same group transistor.Therefore, this those skilled in the art is familiar with when content that can be according to disclosed in Fig. 4 derives easily other possible changes
Change, and the circuit shown in Fig. 4 is only the example for aiding in illustrating, and be not used to limit the scope of the present invention.
Furthermore it is noted that in other embodiments of the invention, each group transistor of pressure drop control circuit can be more
Including plural transistor.Therefore, this those skilled in the art is familiar with when content that can be according to disclosed in Fig. 4 derives easily other
Possible change, and the circuit shown in Fig. 4 is only the example for aiding in illustrating, and be not used to limit the scope of the present invention.
Furthermore it is noted that the column amplifier of the present invention is not limited to the circuit structure shown in Fig. 4.As being familiar with
This those skilled in the art is understood that each column amplifier of reading circuit can have various different embodiments, therefore the electricity shown in Fig. 4
Road is only the example for aiding in illustrating, and is not used to limit the scope of the present invention.
Fig. 5 is the partial circuit diagram for showing the image sensor described in still another embodiment of the invention.In this reality
In applying example, power supply circuit includes power line 550 and pressure drop control circuit 530.Pressure drop control circuit 530 may include m groups
The transistor of coupled in parallel, wherein m are a positive integer, and group's quantity m of transistor is less than the number of the column amplifier of reading circuit
Amount n.Therefore, multiple column amplifiers can share a group transistor, and the group transistor is to produce non-transformer voltage drop (IR-drop
Free a region voltage), and region voltage is supplied to into corresponding column amplifier.In other words, each row of reading circuit amplify
Device can receive equal-sized region voltage by pressure drop control circuit 530.In presently preferred embodiments of the present invention, pressure drop
The plurality of transistor of control circuit 530 can be N-type metal oxide semiconductor transistor.
Circuit shown in Fig. 5 is similar to Fig. 3, and its difference is only that each column amplifier may be coupled to three crystal for repeatedly connecing
Pipe.For example, the first pole of transistor T11 (i) may be coupled to power line 550, and the second pole of transistor T11 (i) can couple
To the first pole of transistor T12 (i), the second pole of transistor T12 (i) may be coupled to the first pole of transistor T13 (i), and brilliant
Second pole of body pipe T13 (i) can simultaneously be coupled to column amplifier 520- (i) and 520- (i+1).Additionally, transistor T11 (i),
T12 (i) can be respectively coupled to different reference voltage V from a control pole of T13 (i)G1、VG2With VG3.Due to the electricity shown in Fig. 5
Road is similar to Fig. 3, therefore the description of circuit other blocks is referred to Fig. 2 and Fig. 3, and repeats no more in this.
Embodiments in accordance with the present invention, the first transistor (for example, being coupled to the transistor of power line) of each group transistor
Control pole be both coupled to reference voltage VG1, transistor seconds control pole be both coupled to reference voltage VG2, and third transistor
The control pole of (for example, being coupled to the transistor of column amplifier) is both coupled to reference voltage VG3.Due to reference voltage VG1、VG2With
VG3It is to be provided directly to the control pole of each transistor, and flows through the electric current in each column amplifier for steady state value, therefore, in power supply electricity
Region voltage produced by pressure supply end points (for example, Np (i) and Np (i+1)) also can be a constant voltage, will not be subject to power supply
The supply voltage drop of the system operating voltage VDD that line 550 is supplied affects.Consequently, it is possible in each column amplifier of reading circuit
Each node voltage in portion can be consistent, and operation behavior also can be consistent, efficiently solves because of the supply voltage of system operating voltage VDD
Drop causes the problem that image quality is lost.
Embodiments in accordance with the present invention, by the transistor for repeatedly connecing as shown in Figure 5, pressure drop control circuit 530 can bear
Power line supply voltage drop can be greater than only coupling one-transistor, therefore completely cut off supply voltage drop ability can compare
It is good.
It should be noted that to simplify explanation, the one of which transistor of pressure drop control circuit 530 is only shown in Fig. 5
And the circuit diagram of two corresponding column amplifiers, and this those skilled in the art is familiar with when content that can be according to disclosed in Fig. 5 is pushed away easily
Derive coupling and the mode of operation of other transistors of pressure drop control circuit 530.
Furthermore it is noted that in other embodiments of the invention, each group transistor of pressure drop control circuit can be more
Including three transistors below and above.Therefore, this those skilled in the art is familiar with when content that can be according to disclosed in Fig. 5 is derived easily
Go out other possible changes, and the circuit shown in Fig. 5 is only the example for aiding in illustrating, and be not used to limit the scope of the present invention.
Furthermore it is noted that the column amplifier of the present invention is not limited to the circuit structure shown in Fig. 5.As being familiar with
This those skilled in the art is understood that each column amplifier of reading circuit can have various different embodiments, therefore the electricity shown in Fig. 5
Road is only the example for aiding in illustrating, and is not used to limit the scope of the present invention.
Can be seen that by above example, because each column amplifier of reading circuit is changed to by pressure drop control circuit from electricity
Source line receives power supply, therefore the voltage received by each column amplifier will not be subject to the system operating voltage that power line is supplied
The supply voltage drop of VDD affects.Consequently, it is possible to each node voltage inside each column amplifier can be consistent, operation behavior also can
Unanimously, efficiently solve the problems, such as because the supply voltage drop of system operating voltage VDD causes image quality to lose.
Additionally, pressure drop control circuit proposed by the invention can more reading circuit isolation power down source noise, therefore signal-
Noise ratio can be lifted effectively.Additionally, as described above, due to the circuit very simple of pressure drop control circuit, the number of elements for using
Seldom, therefore extra power dissipation will not be expended, excessive circuit area will not be also taken, while having power and circuit face concurrently
Long-pending efficiency.
In claim to modified elements the ordinal number such as " first ", " second ", " the 3rd " use itself not
The order of the step performed by the precedence or method between any priority, order of priority, each element is implied, and is only used
Make a check mark to distinguish the different elements with same names (there are different ordinal numbers).
Though the present invention is disclosed above with preferred embodiment, so it is not limited to the scope of the present invention, any to be familiar with this
Those skilled in the art, without departing from the spirit and scope of the present invention, when a little change and retouching, therefore the protection of the present invention can be done
Scope ought be defined depending on the appended claims person of defining.
【Symbol description】
100 image sensors
110 pel arrays
120 reading circuits
130 power supply circuits
230th, 330,430,530 pressure drop control circuit
250th, 350,450,550 power line
120-(1)、120-(2)、120-(3)、120-(n-1)、120-(n)、220-(i)、220-(i+1)、320-(i)、
320- (i+1), 420- (i), 420- (i+1), 520- (i), 520- (i+1) column amplifier
Inp (i), inn (i), inp (i+1), inn (i+1) input
Itail (i), Itail (i+1) current source
Out (i), out (i+1) output end
Np (i), Np (i+1) end points
T (i), T ' (i), T1 (i), T2 (i), T (i+1), T1 (i+1), T2 (i+1), T11 (i), T12 (i), T13 (i) it is brilliant
Body pipe
VG、VG1、VG2、VG3Voltage
Claims (16)
1. a kind of image sensor, including：
One pel array, is made up of multiple rows with the photo-sensitive cell of multiple row；
One reading circuit, is coupled to the pel array, including multiple column amplifiers, wherein each column amplifier is respectively coupled to the picture
One row photo-sensitive cell of pixel array, to produce corresponding sensing voltage；And
One pressure drop control circuit, is coupled between the reading circuit and a power line, to completely cut off the power supply for the reading circuit
Supply voltage drop produced by line so that each column amplifier of the reading circuit is received greatly by the pressure drop control circuit
A little equal region voltage, the plurality of column amplifier of the wherein reading circuit is both coupled to the pressure drop control circuit.
2. image sensor as claimed in claim 1, wherein pressure drop control circuit includes：
Multiple transistors, each transistor is coupled to the power line including one first pole respectively, and one second pole is coupled to the plurality of row
One of amplifier, and a control pole is coupled to a reference voltage.
3. image sensor as claimed in claim 2, wherein the plurality of transistor is N-type metal-oxide semiconductor (MOS) crystal
Pipe.
4. image sensor as claimed in claim 1, wherein pressure drop control circuit includes：
Multiple transistors, each transistor is coupled to the power line including one first pole respectively, and one second pole is coupled to the plurality of row
It is more than one in amplifier, and a control pole is coupled to a reference voltage.
5. image sensor as claimed in claim 1, wherein pressure drop control circuit includes：
Multiple groups of transistors, each group's transistor is respectively coupled between one of the power line and the plurality of column amplifier, and point
At least do not include：
One the first transistor, including one first pole is coupled to the power line, and a control pole is coupled to one first reference voltage；
And
One transistor seconds, including one first pole is coupled to one second pole of the first transistor, it is many that one second pole is coupled to this
One of individual column amplifier, and a control pole is coupled to one second reference voltage.
6. image sensor as claimed in claim 1, wherein pressure drop control circuit includes：
Multiple groups of transistors, each group's transistor be respectively coupled at least one of the power line and the plurality of column amplifier it
Between, and at least include respectively：
One the first transistor, including one first pole is coupled to the power line, and a control pole is coupled to one first reference voltage；
And
One transistor seconds, including one first pole is coupled to one second pole of the first transistor, it is many that one second pole is coupled to this
At least one of individual column amplifier, and a control pole is coupled to one second reference voltage.
7. image sensor as claimed in claim 1, wherein pressure drop control circuit includes：
Multiple groups of transistors, each group's transistor is respectively coupled between one of the power line and the plurality of column amplifier, and point
At least do not include：
One the first transistor, including one first pole is coupled to the power line, and a control pole is coupled to one first reference voltage；
One transistor seconds, including one first pole is coupled to one second pole of the first transistor, and a control pole is coupled to
One second reference voltage；And
One third transistor, including one first pole is coupled to one second pole of the transistor seconds, it is many that one second pole is coupled to this
One of individual column amplifier, and a control pole is coupled to one the 3rd reference voltage.
8. image sensor as claimed in claim 1, wherein pressure drop control circuit includes：
Multiple groups of transistors, each group's transistor be respectively coupled at least one of the power line and the plurality of column amplifier it
Between, and at least include respectively：
One the first transistor, including one first pole is coupled to the power line, and a control pole is coupled to one first reference voltage；
One transistor seconds, including one first pole is coupled to one second pole of the first transistor, and a control pole is coupled to
One second reference voltage；And
One third transistor, including one first pole is coupled to one second pole of the transistor seconds, it is many that one second pole is coupled to this
At least one of individual column amplifier, and a control pole is coupled to one the 3rd reference voltage.
9. a kind of image sensor, including：
One pel array, is made up of multiple rows with the photo-sensitive cell of multiple row；
One reading circuit, is coupled to the pel array, including multiple column amplifiers, wherein each column amplifier is respectively coupled to the picture
One row photo-sensitive cell of pixel array, to produce corresponding sensing voltage；And
One pressure drop control circuit, including multiple transistor coupled in parallel are between the reading circuit and a power line, to for should
Reading circuit completely cuts off the supply voltage drop produced by the power line so that each column amplifier of the reading circuit is by the pressure
Drop control circuit receives an equal-sized region voltage, and the plurality of column amplifier of the wherein reading circuit is both coupled to this
One of multiple transistors.
10. image sensor as claimed in claim 9, wherein the plurality of transistor is N-type metal-oxide semiconductor (MOS) crystal
Pipe.
11. image sensors as claimed in claim 9, wherein each transistor is coupled to the power supply including one first pole respectively
Line, one second pole is coupled to one of the plurality of column amplifier, and a control pole is coupled to a reference voltage.
12. image sensors as claimed in claim 9, wherein each transistor is coupled to the power supply including one first pole respectively
Line, one second pole is coupled to more than one in the plurality of column amplifier, and a control pole is coupled to a reference voltage.
13. image sensors as claimed in claim 9, wherein the plurality of transistor can be divided into multiple groups, each group's transistor
Coupled in parallel at least includes respectively between one of the power line and the plurality of column amplifier：
One the first transistor, including one first pole is coupled to the power line, and a control pole is coupled to one first reference voltage；
And
One transistor seconds, including one first pole is coupled to one second pole of the first transistor, it is many that one second pole is coupled to this
One of individual column amplifier, and a control pole is coupled to one second reference voltage.
14. image sensors as claimed in claim 9, wherein the plurality of transistor can be divided into multiple groups, each group's transistor
Coupled in parallel at least includes respectively between at least one of the power line and the plurality of column amplifier：
One the first transistor, including one first pole is coupled to the power line, and a control pole is coupled to one first reference voltage；
And
One transistor seconds, including one first pole is coupled to one second pole of the first transistor, it is many that one second pole is coupled to this
At least one of individual column amplifier, and a control pole is coupled to one second reference voltage.
15. image sensors as claimed in claim 9, wherein the plurality of transistor can be divided into multiple groups, each group's transistor
Coupled in parallel at least includes respectively between one of the power line and the plurality of column amplifier：
One the first transistor, including one first pole is coupled to the power line, and a control pole is coupled to one first reference voltage；
One transistor seconds, including one first pole is coupled to one second pole of the first transistor, and a control pole is coupled to
One second reference voltage；And
One third transistor, including one first pole is coupled to one second pole of the transistor seconds, it is many that one second pole is coupled to this
One of individual column amplifier, and a control pole is coupled to one the 3rd reference voltage.
16. image sensors as claimed in claim 9, wherein the plurality of transistor can be divided into multiple groups, each group's transistor
Coupled in parallel at least includes respectively between at least one of the power line and the plurality of column amplifier：
One the first transistor, including one first pole is coupled to the power line, and a control pole is coupled to one first reference voltage；
One transistor seconds, including one first pole is coupled to one second pole of the first transistor, and a control pole is coupled to
One second reference voltage；And
One third transistor, including one first pole is coupled to one second pole of the transistor seconds, it is many that one second pole is coupled to this
At least one of individual column amplifier, and a control pole is coupled to one the 3rd reference voltage.
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| CN1574879A (en) * | 2003-05-27 | 2005-02-02 | 精工电子有限公司 | Image sensor |
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