CN104078549A - Led - Google Patents

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Publication number
CN104078549A
CN104078549A CN201310109034.XA CN201310109034A CN104078549A CN 104078549 A CN104078549 A CN 104078549A CN 201310109034 A CN201310109034 A CN 201310109034A CN 104078549 A CN104078549 A CN 104078549A
Authority
CN
China
Prior art keywords
light
sidewall
emittingdiode
height
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201310109034.XA
Other languages
Chinese (zh)
Inventor
张译文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AU Optronics Corp
Original Assignee
AU Optronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AU Optronics Corp filed Critical AU Optronics Corp
Priority to CN201310109034.XA priority Critical patent/CN104078549A/en
Publication of CN104078549A publication Critical patent/CN104078549A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations

Abstract

An LED comprises a substrate, a light-emitting unit and a package material. The substrate is provided with at least one package unit which is formed by two high side walls and two low side walls in a surrounding mode, the light-emitting unit and the package material are arranged in the package unit, the high side walls are located on the left side and the right side of the light-emitting unit respectively, and the low side walls are located on the upper side and the lower side of the light-emitting unit respectively. Accordingly, through design of the low side walls, when the LED is matched with a light guide plate for use, light can be better concentrated, and the light utilization rate is improved.

Description

Light-emittingdiode
Technical field
The present invention is a kind of design of light-emittingdiode, and particularly the encapsulating structure relevant for light-emittingdiode designs.
Background technology
At present in the framework of backlight module design, main member comprises luminescence unit and light element, refer to Fig. 1 a and Fig. 1 b, Fig. 1 a is general backlight module schematic diagram, Fig. 1 b is the luminous dipolar object light source schematic diagram being used in general backlight module, as shown in FIG., luminescence unit is generally luminous dipolar object light source 90, light element is light guide plate 80, the set-up mode of current side entering type light source, conventionally luminous dipolar object light source 90 is arranged to a side of light guide plate 80, light luminous dipolar object light source 90 being sent by light guide plate 80 is converted to uniform planar light.
But in the luminous dipolar object light source 90 using at present, because design in structure is not good, therefore still have the problem of light utilization efficiency not good (light leakage), current luminous dipolar object light source 90, in its encapsulating structure, be mainly by two sidewalls 91, 92 form, due to two sidewalls 91, 92 are arranged at a left side for light emitting source 93 conventionally, right two sides, but the light that light emitting source 93 sends is comprehensive (there is no directive property), therefore part light will never arrange the upper of sidewall, lower two sides are released (shown in Fig. 1 a dotted line), and cause light just to shed before also not entering light guide plate 80, not only cannot be used effectively, also may cause the problem of backlight module generation light leak.
Summary of the invention
Because the problem of prior art, object of the present invention, proposing a kind of light-emittingdiode, except possessing the light leak of preventing problem, has more the standby effect that improves light utilization efficiency.
For achieving the above object, the present invention proposes a kind of embodiment of light-emittingdiode, light-emittingdiode in the present embodiment comprises substrate, luminescence unit and encapsulating material, and on substrate, at least there is an encapsulation unit, and encapsulation unit by two high sidewalls and two low sidewall institute jointly around forming, in this encapsulation unit, just other assembly can be set, luminescence unit for example, encapsulating material etc., and high sidewall lays respectively at a left side for luminescence unit, right two sides, low sidewall lays respectively at the upper of luminescence unit, lower two sides, thus, design by low sidewall, when light-emittingdiode and light guide plate are used in conjunction with, just can not occur, the situation of lower light leak, and can also reach the effect that makes light more concentrated, use raising light utilization efficiency.
In other embodiments of the invention, the height of two low sidewall is lower than the height of these two high sidewalls, and two high sidewalls are arranged in parallel, two low sidewall are also arranged in parallel, in addition, one of them of one of them of two high sidewalls and two low sidewall is mutually vertical, thus, two high sidewalls and two low sidewall are jointly around forming a rectangular configuration, and this rectangular configuration is the structure side wall of encapsulation unit.
In other embodiments of the invention, luminescence unit is positioned on the surface of substrate, and the height of low sidewall is lower than the height of high sidewall, will be higher than the height of low sidewall but the thickness of encapsulating material (highly) is essential, and the thickness of encapsulating material (highly) can not be higher than the height of high sidewall.
In other embodiments of the invention, luminescence unit is positioned on the surface of substrate, and the height of low sidewall is lower than the height of high sidewall, but the thickness of encapsulating material (highly) is essential will be higher than the height of low sidewall, and the thickness of encapsulating material (highly) can not be higher than the height of high sidewall, in addition, the inner face of the high sidewall of the present embodiment is the shape on inclined-plane, that is the inner face of the high sidewall structure that is taper, and the opening part that pyramidal structure is larger is exiting surface, and the inner face of low sidewall still keeps the shape of plane.
In other embodiments of the invention, luminescence unit is positioned on the surface of substrate, and the height of low sidewall is lower than the height of high sidewall, but the thickness of encapsulating material (highly) is essential will be higher than the height of low sidewall, and the thickness of encapsulating material (highly) can not be higher than the height of high sidewall, in addition, the inner face of the high sidewall of the present embodiment is the shape on inclined-plane, that is the inner face of the high sidewall structure that is taper, and the opening part that pyramidal structure is larger is exiting surface, and the structure that is similar taper at the inner face of low sidewall, and its larger opening part of the structure of this similar taper is exiting surface.
In other embodiments of the invention, luminescence unit is embedded in substrate, and the height of low sidewall is lower than the height of high sidewall, but the thickness of encapsulating material (highly) is essential will be higher than the height of low sidewall, and the thickness of encapsulating material (highly) can not be higher than the height of high sidewall, in addition, the inner face of high sidewall and the inner face of low sidewall still keep the shape of plane in the present embodiment.
In other embodiments of the invention, luminescence unit is embedded in substrate, and the height of low sidewall is lower than the height of high sidewall, but the thickness of encapsulating material (highly) is essential will be higher than the height of low sidewall, and the thickness of encapsulating material (highly) can not be higher than the height of high sidewall, in addition, the shape that the inner face of high sidewall is inclined-plane in the present embodiment, that is the inner face of high sidewall is for luminescence unit, the inner face of high sidewall is the structure of taper, and the opening part that pyramidal structure is larger is exiting surface, the inner face of low sidewall has respectively two inclined-planes, and there is angle between this two inclined-plane, the structure that the same inner face in low sidewall is similar taper, and its larger opening part of the structure of this similar taper is exiting surface.
In other embodiments of the invention, the inner face of high sidewall and the inner face of low sidewall, still can have other variation, for example, the inner face of two high sidewalls is curved surface, and the inner face of low sidewall is curved surface, or the inner face of high sidewall also can comprise the form on two inclined-planes, and there is equally angle etc. between two inclined-planes.
For allowing object of the present invention, feature and advantage can make those of ordinary skills be more readily understood, below lift a preferred embodiment, and coordinate accompanying drawing, be described in detail below.
Accompanying drawing explanation
Fig. 1 a is general backlight module schematic diagram;
Fig. 1 b is the luminous dipolar object light source schematic diagram for general backlight module;
Fig. 2 is the use schematic diagram of light-emittingdiode of the present invention;
Fig. 3 is the encapsulating structure schematic diagram of light-emittingdiode of the present invention;
Fig. 4 a is the vertical view (x direction) of light-emittingdiode encapsulating structure the first embodiment of the present invention;
Fig. 4 b is the cutaway view (y direction) of light-emittingdiode encapsulating structure the first embodiment of the present invention;
Fig. 5 a is the vertical view (x direction) of light-emittingdiode encapsulating structure the second embodiment of the present invention;
Fig. 5 b is the cutaway view (y direction) of light-emittingdiode encapsulating structure the second embodiment of the present invention;
Fig. 6 a is the vertical view (x direction) of the third embodiment of light-emittingdiode encapsulating structure of the present invention;
Fig. 6 b is the cutaway view (y direction) of the third embodiment of light-emittingdiode encapsulating structure of the present invention;
Fig. 7 a is the vertical view (x direction) of the 4th kind of embodiment of light-emittingdiode encapsulating structure of the present invention;
Fig. 7 b is the cutaway view (y direction) of the 4th kind of embodiment of light-emittingdiode encapsulating structure of the present invention;
Fig. 8 a is the vertical view (x direction) of the 5th kind of embodiment of light-emittingdiode encapsulating structure of the present invention;
Fig. 8 b is the cutaway view (y direction) of the 5th kind of embodiment of light-emittingdiode encapsulating structure of the present invention.
Primary clustering symbol description:
Substrate 10
Encapsulation unit 11
High sidewall 111,113
Low sidewall 112,114
The height h1 of high sidewall
The height h2 of low sidewall
Luminescence unit 20
Encapsulating material 30
The height h3 of encapsulating material
Angle a
Light guide plate 40
Light guide plate 80
Luminous dipolar object light source 90
Two sidewalls 91,92
Light emitting source 93
Embodiment
Shown in Fig. 2 and Fig. 3, wherein Fig. 2 is for being used the use schematic diagram of light-emittingdiode of the present invention, it is the state being used in conjunction with light guide plate, and the encapsulating structure schematic diagram that Fig. 3 is light-emittingdiode of the present invention, as shown in the figure: in the embodiment of light-emittingdiode of the present invention, at least comprise substrate 10, luminescence unit 20 and encapsulating material 30, and on substrate 10, at least there is an encapsulation unit 11, and encapsulation unit 11 is by two high sidewalls 111, 113 and two low sidewall 112, 114 institutes are jointly around composition, two low sidewall 112 wherein, 114 height is lower than these two high sidewalls 111, 113 height, and two high sidewalls 111, 113 are arranged in parallel, two low sidewall 112, 114 are also arranged in parallel, in addition, one of them of one of them of two high sidewalls and two low sidewall is mutually vertical, furtherly, for example one end of high sidewall 111 interconnects with one end of low sidewall 112 and is mutually vertical, the other end of high sidewall 111 also interconnects with one end of low sidewall 114 and is mutually vertical, and one end of high sidewall 113 interconnects with the other end of low sidewall 112 and is mutually vertical, the other end of high sidewall 113 also interconnects with the other end of low sidewall 114 and is mutually vertical, thus, two high sidewalls 111, 113 and two low sidewall 112, 114 jointly around forming a rectangular configuration, this rectangular configuration is the structure side wall of encapsulation unit 11, in this structure side wall, just other assembly can be set, for example luminescence unit 20, encapsulating material 30 etc., two high sidewalls 111 now, 113 for example lay respectively at a left side for luminescence unit 20, right two sides, and two low sidewall 112, 114 for example lay respectively at the upper of luminescence unit 20, lower two sides.
As mentioned above, in an embodiment of the present invention, luminescence unit 20 is arranged in encapsulation unit 11, encapsulating material 30 covers on luminescence unit 20, and be filled in encapsulation unit 11, that is to say, encapsulating material 30 is filled in two high sidewalls 111, 113 and two low sidewall 112, 114 jointly in the rectangular configuration forming, use as protection luminescence unit 20 and adjustment light, and due to upper in luminescence unit 20 of the encapsulation unit 11 in the present embodiment, lower two sides have two low sidewall 112, 114 design, in the time of can making light-emittingdiode and light guide plate be used in conjunction with, can not occur, the situation of lower light leak, and can also reach the effect that makes light more concentrated, as shown in Figure 2, in the state that the present embodiment light-emittingdiode and light guide plate 40 are used in conjunction with, a plurality of encapsulation units 11 can be set on substrate 10, in its encapsulation unit 11, luminescence unit 20 can be set, become the form of light-emittingdiode lamp bar (LED LightBar), and be disposed at the light inlet side of light guide plate 40, just can reach the object that an even light source is provided, and the light that luminescence unit 20 sends, by two low sidewall 112, 114 design also can be by not upper, lower two sides are released, can further improve light utilization efficiency.
Because light-emittingdiode is for coordinating various product specification, for encapsulating structure, can there is multiple different design, below just coordinate respectively different diagrams that various embodiment is described, please first consult Fig. 4 a and Fig. 4 b, Fig. 4 a is vertical view (the x direction of light-emittingdiode encapsulating structure the first embodiment of the present invention, refer to Fig. 2, following diagram is all identical), Fig. 4 b is cutaway view (the y direction of light-emittingdiode encapsulating structure the first embodiment of the present invention, refer to Fig. 2, following diagram is all identical), as shown in the figure: luminescence unit 20 is positioned on the surface of substrate 10 in the present embodiment, and low sidewall 112, 114 height h2 is lower than high sidewall 111, 113 height h1, that is to say h1>h2, but what specify is, the thickness of encapsulating material 30 (highly) h3 is essential will be higher than low sidewall 112, 114 height h2, and the thickness of encapsulating material 30 (highly) h3 can not be higher than high sidewall 111, 113 height h1, that is to say h3>h2 and h1 >=h3.
Referring to Fig. 5 a is the vertical view (x direction) of light-emittingdiode encapsulating structure the second embodiment of the present invention, Fig. 5 b is the cutaway view (y direction) of light-emittingdiode encapsulating structure the second embodiment of the present invention, as shown in the figure: luminescence unit 20 is positioned on the surface of substrate 10 in the present embodiment, and low sidewall 112, 114 height h2 is lower than high sidewall 111, 113 height h1, that is to say h1>h2, but what specify is, the thickness of encapsulating material 30 (highly) h3 is essential will be higher than low sidewall 112, 114 height h2, and the thickness of encapsulating material 30 (highly) h3 can not be higher than high sidewall 111, 113 height h1, that is to say h3>h2 and h1 >=h3, in addition, high sidewall 111 in the present embodiment, 113 inner face is the shape on inclined-plane, that is high sidewall 111, 113 inner face is for luminescence unit 20, high sidewall 111, 113 inner face is the structure of taper, and the opening part that pyramidal structure is larger is exiting surface, and low sidewall 112, 114 inner face still keeps the shape of plane.
Referring to Fig. 6 a is the vertical view (x direction) of the third embodiment of light-emittingdiode encapsulating structure of the present invention, Fig. 6 b is the cutaway view (y direction) of the third embodiment of light-emittingdiode encapsulating structure of the present invention, as shown in the figure: luminescence unit 20 is positioned on the surface of substrate 10 in the present embodiment, and low sidewall 112, 114 height h2 is lower than high sidewall 111, 113 height h1, that is to say h1>h2, but what specify is, the thickness of encapsulating material 30 (highly) h3 is essential will be higher than low sidewall 112, 114 height h2, and the thickness of encapsulating material 30 (highly) h3 can not be higher than high sidewall 111, 113 height h1, that is to say h3>h2 and h1 >=h3, in addition, high sidewall 111 in the present embodiment, 113 inner face is the shape on inclined-plane, that is high sidewall 111, 113 inner face is for luminescence unit 20, high sidewall 111, 113 inner face is the structure of taper, and the opening part that pyramidal structure is larger is exiting surface, and low sidewall 112, 114 inner face has respectively two inclined-planes, and there is angle a between this two inclined-plane, same in low sidewall 112, 114 inner face is the structure of similar taper, and its larger opening part of the structure of this similar taper is exiting surface.
Referring to Fig. 7 a is the vertical view (x direction) of the 4th kind of embodiment of light-emittingdiode encapsulating structure of the present invention, Fig. 7 b is the cutaway view (y direction) of the 4th kind of embodiment of light-emittingdiode encapsulating structure of the present invention, as shown in the figure: luminescence unit 20 is embedded in substrate 10 in the present embodiment, and low sidewall 112, 114 height h2 is lower than high sidewall 111, 113 height h1, that is to say h1>h2, but what specify is, the thickness of encapsulating material 30 (highly) h3 is essential will be higher than low sidewall 112, 114 height h2, and the thickness of encapsulating material 30 (highly) h3 can not be higher than high sidewall 111, 113 height h1, that is to say h3>h2 and h1 >=h3, in addition, high sidewall 111 in the present embodiment, 113 inner face and low sidewall 112, 114 inner face still keeps the shape of plane.
Referring to Fig. 8 a is the vertical view (x direction) of the 5th kind of embodiment of light-emittingdiode encapsulating structure of the present invention, Fig. 8 b is the cutaway view (y direction) of the 5th kind of embodiment of light-emittingdiode encapsulating structure of the present invention, as shown in the figure: luminescence unit 20 is embedded in substrate 10 in the present embodiment, and low sidewall 112, 114 height h2 is lower than high sidewall 111, 113 height h1, that is to say h1>h2, but what specify is, the thickness of encapsulating material 30 (highly) h3 is essential will be higher than low sidewall 112, 114 height h2, and the thickness of encapsulating material 30 (highly) h3 can not be higher than high sidewall 111, 113 height h1, that is to say h3>h2 and h1 >=h3, in addition, high sidewall 111 in the present embodiment, 113 inner face is the shape on inclined-plane, that is high sidewall 111, 113 inner face is for luminescence unit 20, high sidewall 111, 113 inner face is the structure of taper, and the opening part that pyramidal structure is larger is exiting surface, and low sidewall 112, 114 inner face has respectively two inclined-planes, and there is angle a between this two inclined-plane, same in low sidewall 112, 114 inner face is the structure of similar taper, and its larger opening part of the structure of this similar taper is exiting surface.
By this, utilize the light-emittingdiode of above-mentioned various embodiment designs to coordinate with light guide plate while implementing, can reduce the problem of the upper and lower side leakage light of light-emittingdiode, and can prevent the problem of brightness irregularities, further can also, for adjusting light source, allow the light utilization efficiency of light source reach best.
Although the present invention discloses as above with preferred embodiment, but it is not intended to limit the present invention, any those of ordinary skills, without departing from the spirit and scope of the present invention, when doing a little change and retouching, for example: except above-mentioned various embodiment, high sidewall 111 wherein, 113 inner face and low sidewall 112, 114 inner face, still can there is other variation, for example, two high sidewalls 111, 113 inner face is curved surface, low sidewall 112, 114 inner face is curved surface, or the inner face of high sidewall also can comprise the form on two inclined-planes, and between two inclined-planes, there is equally angle etc.Therefore the present invention is not limited to above-described embodiment, and is only subject to the restriction of claims, and those of ordinary skills can easily modify to it and change, but does not leave essence design of the present invention and scope.

Claims (10)

1. a light-emittingdiode, is characterized in that, comprising:
One substrate, on it, at least have an encapsulation unit, this encapsulation unit is by two high sidewalls and two low sidewall jointly around forming, and wherein this two high sidewall is arranged in parallel, this two low sidewall is arranged in parallel, and one of them of this two high sidewall is mutually vertical with one of them of this two low sidewall;
One luminescence unit, is arranged in this encapsulation unit; And
One encapsulating material, it covers on this luminescence unit, and is filled in this encapsulation unit.
2. light-emittingdiode as claimed in claim 1, is characterized in that, this two high sidewall lays respectively at left and right two sides of this luminescence unit, and this two low sidewall lays respectively at upper and lower two sides of this luminescence unit.
3. light-emittingdiode as claimed in claim 2, is characterized in that, this luminescence unit is positioned on the surface of this substrate.
4. light-emittingdiode as claimed in claim 2, is characterized in that, this luminescence unit is embedded in this substrate.
5. the light-emittingdiode as described in claim 3 or 4, is characterized in that, the height of this two low sidewall is lower than the height of this two high sidewall.
6. the light-emittingdiode as described in claim 3 or 4, is characterized in that, the height of encapsulating material is higher than the height of low sidewall, and the thick height of encapsulating material can not be higher than the height of high sidewall.
7. the light-emittingdiode as described in claim 3 or 4, is characterized in that, the inner face of this two high sidewall all has a curved surface.
8. the light-emittingdiode as described in claim 3 or 4, is characterized in that, the inner face of this two high sidewall all respectively has two inclined-planes, and has an angle between this two inclined-plane.
9. the light-emittingdiode as described in claim 3 or 4, is characterized in that, the inner face of this two high sidewall all has an inclined-plane.
10. the light-emittingdiode as described in claim 3 or 4, is characterized in that, the inner face of this two low sidewall all respectively has two inclined-planes, and has an angle between this two inclined-plane.
CN201310109034.XA 2013-03-29 2013-03-29 Led Pending CN104078549A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310109034.XA CN104078549A (en) 2013-03-29 2013-03-29 Led

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310109034.XA CN104078549A (en) 2013-03-29 2013-03-29 Led

Publications (1)

Publication Number Publication Date
CN104078549A true CN104078549A (en) 2014-10-01

Family

ID=51599704

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310109034.XA Pending CN104078549A (en) 2013-03-29 2013-03-29 Led

Country Status (1)

Country Link
CN (1) CN104078549A (en)

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Application publication date: 20141001