CN104078535A - Reverse-polarity AlGaInP-based LED side wall coarsening method - Google Patents
Reverse-polarity AlGaInP-based LED side wall coarsening method Download PDFInfo
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- CN104078535A CN104078535A CN201310108349.2A CN201310108349A CN104078535A CN 104078535 A CN104078535 A CN 104078535A CN 201310108349 A CN201310108349 A CN 201310108349A CN 104078535 A CN104078535 A CN 104078535A
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- 238000000034 method Methods 0.000 title claims abstract description 65
- 239000008367 deionised water Substances 0.000 claims abstract description 10
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000004140 cleaning Methods 0.000 claims abstract description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 4
- 238000007788 roughening Methods 0.000 claims description 16
- 230000007797 corrosion Effects 0.000 claims description 13
- 238000005260 corrosion Methods 0.000 claims description 13
- 229920006395 saturated elastomer Polymers 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000001259 photo etching Methods 0.000 claims description 4
- 238000000605 extraction Methods 0.000 abstract description 9
- 238000005516 engineering process Methods 0.000 abstract description 5
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 230000007423 decrease Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
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- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
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- 239000002245 particle Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
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- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 238000006424 Flood reaction Methods 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 206010040844 Skin exfoliation Diseases 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000035618 desquamation Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
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- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
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- 230000003287 optical effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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Abstract
The invention relates to a reverse-polarity AlGaInP-based LED side wall coarsening method. The method includes the following steps that (1) exposure and development are conducted on a mesa image epitaxial wafer of a reverse-polarity AlGaInP-based LED through an existing photolithographic process, and a constant periodicity edge figure is formed at the periphery of the mesa image epitaxial wafer; (2) the mesa image epitaxial wafer obtained after development in the step (1) is corroded through deionized water containing saturation Br2; (3) cleaning and photoresist removing are conducted on the mesa image epitaxial wafer after being corroded through the step (2) according to the conventional process, and coarsening side wall corresponding to the periodicity edge figure shape is formed. According to the reverse-polarity AlGaInP-based LED side wall coarsening method, the mode that coarsening of the side wall of the LED chip is achieved through the photolithographic technology is first proposed, the light extraction efficiency of the LED, especially the LED chip side face, is improved greatly compared with the prior art, the external quantum efficiency of LED devices is improved, internal heat is reduced, and the service life of the LED is prolonged.
Description
Technical field
The present invention relates to a kind of reversed polarity AlGaInP base LED sidewall method of roughening, belong to the technical field of light-emitting diodes pipe manufacturer.
Background technology
The fifties in last century, under the effort of the many well-known research institutions that are representative at IBM Thomas J.Watson Research Center, the III– V family semiconductor that the GaAs of take is representative emerges rapidly in semiconductor light emitting field.Along with the appearance of metal oxide chemical vapor deposition (MOCVD) technology, make the semi-conductive growth of high-quality III– V family break through technology potential barrier afterwards, the semiconductor light emitting diode device of various wavelength floods the market in succession.Because semiconductor light-emitting-diode has the speciality such as theoretical efficiency is high, life-span length, anti-mechanical shock with respect to current luminescent device, be worldwide counted as illuminating device of new generation.But due to the general higher (GaAs:3.2 of the semi-conductive refractive index of III– V family, GaN:2.4), this is limited by interface total reflection phenomenon with regard to the light that causes the light-emitting zone of LED and send when shining in air through chip surface, only have the light of few part can shine device outside (GaAs is about 2.4%, GaN and is about 4%).Interface total reflection phenomenon causes the external quantum efficiency of LED low, is the main cause that restriction LED substitutes existing illuminating device.
The people such as Nuese in 1969 have delivered at J.Electrochem Soc.:Solid State Sci. the method for utilizing epoxy encapsulation LED chip, and the external quantum efficiency of ruddiness GaAs base LED has been improved to 1-2 doubly.Between GaAs material and air, adding one deck refractive index is that 1.5 epoxy resin can effectively increase cirtical angle of total reflection degree, makes more light can shine LED device outside.But what the method was introduced is still smooth light output surface, limited for the raising of external quantum efficiency, and has introduced a bed boundary more and also can cause interface Fresnel loss, the radiation aging of resin material also can cause light extraction efficiency to decline simultaneously.
1993, thus first the people such as Schnitzer propose to utilize the method for etching to carry out to semi-conducting material light output surface the method that alligatoring improves the external quantum efficiency of LED chip at Appl.Phys.Lett., have obtained 50% light extraction efficiency.The principle that surface coarsening improves LED chip light ejection efficiency is to utilize the concaveconvex structure of LED light output surface, the light scattering of total reflection angle is gone out or be guided out chip, thereby increasing the light ratio that can shine LED outside.After this, Windisch has reported that at periodicals such as IEEE Trans.Electron Dev. and Appl.Phys.Lett. similar method carries out alligatoring to LED light output surface.Utilize the weak point that the method for etching is carried out alligatoring to LED light output surface to be: (1) etching has very large destructiveness for the carrier transport properties of semi-conducting material, and the electric property of LED is obviously reduced; (2) etching apparatus purchase and use cost extremely high, make the cost of LED significantly increase; (3) pattern and the size of utilizing etching to carry out alligatoring to LED light output surface have no idea to control and optimize; (4) process time longer, production efficiency is lower.
The method of the III– V family semi-conducting materials such as GaAs, GaP and GaN being carried out to chemical corrosion is very few.1998, Stocker published an article at Appl.Phys.Lett., had reported and had utilized hot KOH solution or hot H
3pO
4successfully realize the corrosion of GaN material, LED has been carried out to effective alligatoring, and obtained 50% light extraction efficiency.Utilize the deficiency that the method for chemical corrosion is carried out alligatoring to LED light output surface to be: (1) is difficult to accurately control speed and the degree of depth of corrosion, this is that latent defect by chemical method determines; (2) be subject to the impact of the factors such as ambient temperature, be difficult to obtain the alligatoring LED chip of high duplication; (3) structure that corrosion obtains is single, is difficult to be optimized for light extraction effect.(4) process time longer, production efficiency is lower.
In the epitaxial process of semi-conducting material, carry out certain design and regulation and control, also can reach the result of LED light output surface being carried out to alligatoring, as Chinese patent document CN101521258 provides a kind of method that improves LED external quantum efficiency, the method is to improve the doping content of P type layer Mg during by the growth of P type layer in LED epitaxial slice structure, thereby reaches the effect of epitaxial wafer surface roughening.Roughened layer can be any one deck in P type composite bed, or multilayer, or the some regions of certain one deck.The light that LED surface coarsening layer meets total reflection law by those changes direction, destroys light in the total reflection of LED inside, improving extraction efficiency, thus improve external quantum efficiency.But the p-GaN difficulty that obtains high Mg doping content in epitaxial process is very big, the more difficult industrialization of this method.And change the decline that epitaxial growth parameters can cause LED chip electricity and optical property.This method coarse surface roughness is limited, the raising of the light ejection efficiency that is difficult to reach desirable.
Chinese patent document CN101494272 provides a kind of manufacture method that can make the P-GaN layer surface coarsening of LED, first in Semiconductor substrate, grow successively the alligatoring GaN layer of n-GaN layer, quantum well layer, p-GaN layer and non-doping, then adopt the alligatoring GaN layer of non-doping described in ICP or ion dry etching so that the coarse surface shape of the alligatoring GaN layer of described non-doping is transferred to described p-GaN layer, thereby make described p-GaN layer surface coarsening.But this invention is limited to the technical bottleneck of ICP etching, damage the electric property of LED device, too much ICP is etched with and may causes chip electric leakage, decrease in yield.In addition, it is high that the method is prepared LED chip product cost, and etching cost is expensive.
Chinese patent document CN101656285 provides a kind of PS of utilization spheres as template to make the method for light-emitting diode coarse surface.Comprise step: (1) is epitaxial growth epitaxial wafer routinely; (2) on epitaxially grown P type contact layer, lay the monofilm that one deck is closely arranged and formed by PS ball; (3) take chloride or the nitrate of tetraethyl orthosilicate, metal is precursor, will precursor, second alcohol and water is filled in the PS ball and the gap between P type contact layer of monofilm after mixing, and room temperature is standing and heat and be decomposed into corresponding oxide; (4) epitaxial wafer is placed in to carrene, with carrene, dissolves and get rid of PS ball, the oxide forming in the gap between PS ball and P type contact layer is retained on P type contact layer by bowl-shape periodic arrangement structure; (5) with the oxide forming, make mask, dry etching P type contact layer, forms coarse surface; (6) erode residual oxide.This invention can obtain etching cycle and the controlled alligatoring LED surface of the degree of depth.It is loaded down with trivial details that the method utilizes PS microballoon by ICP etching, alligatoring operation to be carried out in p-GaN surface as template, uses PS microballoon price, and LED chip cost is significantly improved, and is not suitable for combining with LED production technology.And ICP etching is unfavorable for the electric property of LED device.
Chinese patent document CN101656284 discloses a kind of method of the ITO of utilization particle mask alligatoring red light-emitting diode.Utilize the method for ITO particle mask alligatoring red light-emitting diode, on epitaxially grown P type contact layer, use the ito thin film of electron beam transpiration thick layer 260nm; Erode part ITO, residual granular ITO makes mask, and dry etching P type contact layer forms coarse surface; The method needs twice evaporation ITO current extending, and cost compared with normal LED technique obviously improves.Also there is the problem of ICP etching technics.And the concentrated hydrochloric acid that this method is used has severe corrosive and strong volatility.
Chinese patent document CN101226977 provides the processing method of GaN basis light emitting diode surface coarsing, under the cryogenic conditions of 600 ℃～750 ℃, P type GaN cap layer in growing GaN based LED epitaxial slice, the dislocation of this cap layer is propagated along the direction perpendicular to epitaxial surface, do not bend, thereby the dislocation density of this cap layer is increased and do not affect the photoelectric characteristic of device; In the KOH corrosion LED epitaxial slice of the corrosion temperature of setting and use melting under the time, in P type GaN layer, the highdensity dislocation perpendicular to epitaxial surface is corroded by selectivity, forms the etch pit of intensive regular shape at device surface.This method is had relatively high expectations for the epitaxial growth of semi-conducting material, is difficult for realizing, and controls difficulty very big.
Because the anisotropic etch feature of quaternary phosphide semi-conducting material is obvious, AlGaInP base, adopts traditional mesa caustic solution to be difficult to realize the control to its sidewall pattern as described in the present invention, cannot obtain good sidewall erosion profile.
Summary of the invention
For the deficiencies in the prior art, the invention provides a kind of reversed polarity AlGaInP base LED sidewall method of roughening.The method does not need ICP etching, and the electric property of protection LED device, reduces production costs, and working (machining) efficiency is higher, without introducing additional technique flow process, and can be seamless integrated with existing LED processing procedure.
Terminological interpretation:
Mesa figure: on wafer, the isolation pattern between device and device, also referred to as table top.
Reversed polarity AlGaInP base LED: through the AlGaInP base LED chip of substrate desquamation and bonding process, n electrode is upper, p electrode under, so be commonly referred to reversed polarity LED.
Technical solution of the present invention is as follows:
A reversed polarity AlGaInP base LED sidewall method of roughening, comprises that step is as follows:
(1) utilize existing photoetching process the mesa Self-aligned sheet of reversed polarity AlGaInP base LED is exposed and develop, in described mesa Self-aligned sheet surrounding, form fixed cycle edge pattern;
(2) by Br
2add in deionized water to saturated, form containing saturated Br
2deionized water, utilizes described containing saturated Br
2the described mesa Self-aligned sheet that deionized water has developed to step (1) corrodes; Its corrosion depth runs through epitaxial structure, extends to bonded layer;
(3) to the mesa Self-aligned sheet after step (2) corrosion according to the common process processing of cleaning, remove photoresist, form the alligatoring sidewall corresponding with described periodicity edge pattern shape.After above-mentioned steps completes, directly carry out follow-up LED chip manufacture craft.
Preferred according to the present invention, the cycle t of the periodicity edge pattern that step (1) is described is 1 μ m-20 μ m.
Preferred according to the present invention, described periodicity edge pattern is conical tooth, and the base length a of each conical tooth is 1 μ m-20 μ m.
Preferred according to the present invention, described periodicity edge pattern is round tooth, and the base length b of described each round tooth is 1 μ m-20 μ m.
The invention has the advantages that:
The present invention proposes to utilize photoetching technique to realize the sidewall alligatoring of LED chip first, and compared with prior art excellent results of the present invention is as follows:
1) light extraction efficiency that the present invention has promoted LED is greatly the light extraction efficiency of LED chip side particularly, improves the external quantum efficiency of LED device, reduces inner heat, extends the working life of LED.
2) LED sidewall method of roughening of the present invention, without introducing additional technique flow process, does not have obvious cost to promote.
3) the present invention is owing to having avoided use ICP etching, for the electrical properties not damaged of LED chip.
4) LED sidewall method of roughening of the present invention also has the features such as process velocity is fast, working (finishing) area is large, alligatoring is effective.LED chip light extraction efficiency through the method alligatoring can increase more than 30% with respect to classic flat-plate chip.
Accompanying drawing explanation
Fig. 1 is the mesa litho pattern structure of not carrying out sidewall alligatoring of the present invention in embodiment 1;
Fig. 2 is the mesa litho pattern structure of carrying out sidewall alligatoring of the present invention in embodiment 1;
Fig. 3 is the size indication figure that carries out round tooth in the mesa litho pattern structure of sidewall alligatoring of the present invention in embodiment 1;
Fig. 4 is the mesa litho pattern structure of carrying out sidewall alligatoring of the present invention in embodiment 2;
Fig. 5 is the size indication figure that carries out conical tooth in the mesa litho pattern structure of sidewall alligatoring of the present invention in embodiment 2.
Embodiment
Below in conjunction with drawings and Examples, the present invention will be further described, but be not limited to this.
Embodiment 1,
As Figure 1-3.
A reversed polarity AlGaInP base LED sidewall method of roughening, comprises that step is as follows:
(1) utilize existing photoetching process the mesa Self-aligned sheet of reversed polarity AlGaInP base LED is exposed and develop, in described mesa Self-aligned sheet surrounding, form fixed cycle edge pattern; The cycle t of described periodicity edge pattern is 1 μ m; Described periodicity edge pattern is round tooth, and the base length b of described each round tooth is 1 μ m;
(2) by Br
2add in deionized water to saturated, form containing saturated Br
2deionized water, utilizes described containing saturated Br
2the described mesa Self-aligned sheet that deionized water has developed to step (1) corrodes; Its corrosion depth runs through epitaxial structure, extends to bonded layer;
(3) to the mesa Self-aligned sheet after step (2) corrosion according to the common process processing of cleaning, remove photoresist, form the alligatoring sidewall corresponding with described periodicity edge pattern shape.After above-mentioned steps completes, directly carry out follow-up LED chip manufacture craft.
Embodiment 2,
As shown in Figure 4,5.A reversed polarity AlGaInP base LED sidewall method of roughening as described in Example 1, its difference is,
The cycle t of the periodicity edge pattern that step (1) is described is 20 μ m.Described periodicity edge pattern is conical tooth, and the base length a of each conical tooth is 20 μ m; The height h of described conical tooth is 35 μ m.
Embodiment 3,
A reversed polarity AlGaInP base LED sidewall method of roughening as described in Example 1, its difference is, the cycle t of described periodicity edge pattern is 10 μ m; Described periodicity edge pattern is round tooth, and the base length b of described each round tooth is 10 μ m.
Embodiment 4,
A reversed polarity AlGaInP base LED sidewall method of roughening as described in Example 1, its difference is, the cycle t of the periodicity edge pattern that step (1) is described is 10 μ m.Described periodicity edge pattern is conical tooth, and the base length a of each conical tooth is 10 μ m; The height h of described conical tooth is 10 μ m.
Embodiment 5,
A reversed polarity AlGaInP base LED sidewall method of roughening as described in Example 1, its difference is, the cycle t of the periodicity edge pattern that step (1) is described is 1 μ m.Described periodicity edge pattern is conical tooth, and the base length a of each conical tooth is 1 μ m; The height h of described conical tooth is 3 μ m.
Claims (4)
1. a reversed polarity AlGaInP base LED sidewall method of roughening, is characterized in that, it is as follows that the method comprising the steps of:
(1) utilize existing photoetching process the mesa Self-aligned sheet of reversed polarity AlGaInP base LED is exposed and develop, in described mesa Self-aligned sheet surrounding, form fixed cycle edge pattern;
(2) by Br
2add in deionized water to saturated, form containing saturated Br
2deionized water, utilizes described containing saturated Br
2the described mesa Self-aligned sheet that deionized water has developed to step (1) corrodes; Its corrosion depth runs through epitaxial structure, extends to bonded layer;
(3) to the mesa Self-aligned sheet after step (2) corrosion according to the common process processing of cleaning, remove photoresist, form the alligatoring sidewall corresponding with described periodicity edge pattern shape.After above-mentioned steps completes, directly carry out follow-up LED chip manufacture craft.
2. a kind of reversed polarity AlGaInP base LED sidewall method of roughening according to claim 1, is characterized in that, the cycle t of the periodicity edge pattern that step (1) is described is 1 μ m-20 μ m.
3. a kind of reversed polarity AlGaInP base LED sidewall method of roughening according to claim 1, is characterized in that, described periodicity edge pattern is conical tooth, and the base length a of each conical tooth is 1 μ m-20 μ m.
4. a kind of reversed polarity AlGaInP base LED sidewall method of roughening according to claim 1, is characterized in that, described periodicity edge pattern is round tooth, and the base length b of described each round tooth is 1 μ m-20 μ m.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112447893A (en) * | 2019-09-04 | 2021-03-05 | 安徽三安光电有限公司 | Light emitting diode and manufacturing method thereof |
| CN112765893A (en) * | 2021-01-27 | 2021-05-07 | 广东省大湾区集成电路与系统应用研究院 | Mask side wall angle control method, system, device and medium based on genetic algorithm |
-
2013
- 2013-03-31 CN CN201310108349.2A patent/CN104078535A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112447893A (en) * | 2019-09-04 | 2021-03-05 | 安徽三安光电有限公司 | Light emitting diode and manufacturing method thereof |
| CN112447893B (en) * | 2019-09-04 | 2022-08-30 | 安徽三安光电有限公司 | Light emitting diode and manufacturing method thereof |
| CN112765893A (en) * | 2021-01-27 | 2021-05-07 | 广东省大湾区集成电路与系统应用研究院 | Mask side wall angle control method, system, device and medium based on genetic algorithm |
| CN112765893B (en) * | 2021-01-27 | 2023-04-25 | 广东省大湾区集成电路与系统应用研究院 | Mask side wall angle control method, system, equipment and medium based on genetic algorithm |
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Effective date of registration: 20151111 Address after: 261061 Weifang high tech Zone, Jin Road, No. 9, No. Applicant after: Shandong Inspur Huaguang Optoelectronics Co., Ltd. Address before: 250101 Shandong city of Ji'nan province high tech Zone (Lixia) Tianchen Street No. 1835 Applicant before: Shandong Huaguang Photoelectronic Co., Ltd. |
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