CN104076268B - The open circuit localization method of test structure - Google Patents
The open circuit localization method of test structure Download PDFInfo
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- CN104076268B CN104076268B CN201410331726.3A CN201410331726A CN104076268B CN 104076268 B CN104076268 B CN 104076268B CN 201410331726 A CN201410331726 A CN 201410331726A CN 104076268 B CN104076268 B CN 104076268B
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Abstract
The invention provides a kind of open circuit localization method testing structure, including: first carry out step one: providing a test structure, described test structure includes cathode terminal and anode tap；Then step 2 is carried out: by described cathode terminal ground connection, and respectively described cathode terminal and described anode tap are carried out voltage contrast inspection, if the voltage contrast of described cathode terminal is bright, the voltage contrast of described anode tap is dark, then carry out step 3: prepare section to test described between described cathode terminal and anode tap is structural segmented, respectively the segmentation section of described test structure is carried out voltage contrast inspection, the voltage contrast of the segmentation section according to described test structure, it is judged that the off position of described test structure.The method can off position in assignment test structure accurately and fast.
Description
Technical field
The present invention relates to reliability (Reliability) field in semiconductor manufacturing industry, survey particularly to one
The open circuit localization method of examination structure.
Background technology
Electromigration (electromigration, be called for short EM) be a kind of progressively motion due to conductor intermediate ion and
Material (material) transfer phenomena caused, its inherent mechanism be conduction electrons with the metallic atom of diffusion it
Between momentum (momentum) transfer.For there is high DC current density (high directcurrent
Densities), in occasion, such as microelectronic, electromigration effect is the most crucial.Along with integrated circuit produces
The size of product constantly reduces, and the realistic meaning of electromigration effect is continuously increased.When electromigration occurs, a fortune
The part momentum of galvanic electricity transfers to neighbouring active ions (activated ion), and this can cause this ion to leave
Its home position.Elapsing over time, this strength can cause former away from them of the atom of vast number
Beginning position.Electromigration can cause occurring fracture (break) or breach in conductor (the narrowest wire)
(gap) stoping the flowing of electricity, this defect is referred to as cavity (void) or internal failure (internal failure),
I.e. open a way.Electromigration also results in the atom packing (pile up) in a conductor and drifts about to proximity conductor
(drift) form unexpected electrical connection, this defect be referred to as hillock lost efficacy (hillock failure) or
Whisker lost efficacy (whisker failure), i.e. open circuit.Above-mentioned two class defects all can cause fault.
The ability that processing procedure is deelectric transferred, electromigratory test structure is assessed by testing certain test structure
Having a variety of, wherein having one is that lower interconnection line is connected to upper strata interconnection line by through hole, through a fixed length
It is connected to lower interconnection line by through hole again after the upper strata interconnection line of degree.The electric current of test experienced by one exactly
Flowed to the process of lower interconnection line again by through hole to upper strata interconnection line from lower interconnection line, according to the flow direction of electric current,
This structure is referred to as Upstream structure, i.e. upstream structure.Corresponding with Upstream structure also has
Downstream structure, i.e. downstream configurations, as the term suggests, the current direction of Downstream structure be exactly from
Upper strata interconnection line returns a path of upper strata interconnection line to lower interconnection line.
At present, in order to position defect in electromigratory test structure, general employing scanning electron microscope is amplified
Observing, the resolution of scanning electron microscope reaches several nanometer.But, due to electromigratory test structure
Area also tend to take advantage of more than 100 microns at 100 microns, to therefrom find the defect less than 1 micron, need
Want for a long time.
Summary of the invention
It is an object of the invention to provide a kind of open circuit localization method testing structure, can accurately and fast
Off position in assignment test structure.
For solving above-mentioned technical problem, the present invention provides a kind of open circuit localization method testing structure, including:
Step one: providing a test structure, described test structure includes cathode terminal and anode tap；
Step 2: by described cathode terminal ground connection, and respectively described cathode terminal and described anode tap are carried out voltage
Contrast checks, if the voltage contrast of described cathode terminal is bright, the voltage contrast of described anode tap is dark, then
Carry out step 3；
Step 3: prepare section to test described between described cathode terminal and anode tap is structural segmented is the most right
The segmentation section of described test structure carries out voltage contrast inspection, according to the segmentation section of described test structure
Voltage contrast, it is judged that the off position of described test structure.
Optionally, described test structure includes:
First connecting line；
First through-hole structure, one end of described first through-hole structure connects one end of described first connecting line；
Second connecting line, the other end of described first through-hole structure connects one end of described second connecting line；
Second through-hole structure, one end of described second through-hole structure connects the other end of described second connecting line；
3rd connecting line, the other end of described second through-hole structure connects one end of described 3rd connecting line；
Anode pad, described anode pad is electrically connected with described first connecting line, and described anode pad is institute
State anode tap；And
Negative electrode pad, described negative electrode pad is electrically connected with described 3rd connecting line, and described negative electrode pad is institute
State cathode terminal.
Optionally, described step 3 includes:
One end of first through-hole structure, one end of the first connecting line and the second connecting line is divided into first paragraph, right
Described first paragraph prepares section, and the section of described first paragraph is carried out voltage contrast inspection.
Optionally,
The voltage contrast of first paragraph as described in whole is bright, the most described off position be positioned at described first paragraph with
Between described anode pad；
The voltage contrast of first paragraph as described in whole is secretly, the most described off position be positioned at described first paragraph with
Between described negative electrode pad；
Described first through-hole structure with as described in the voltage contrast of the first connecting line different, the most described off position
Between one end of described first through-hole structure and described first connecting line；
Described first through-hole structure with as described in the voltage contrast of the second connecting line different, the most described off position
Between one end of described first through-hole structure and described second connecting line.
Optionally, described step 3 includes:
One end of second through-hole structure, the other end of the second connecting line and the 3rd connecting line is divided into second segment,
Section is prepared by described second segment, and the section of described second segment is carried out voltage contrast inspection.
Optionally,
The voltage contrast of second segment as described in whole is bright, the most described off position be positioned at described second segment with
Between described anode pad；
The voltage contrast of second segment as described in whole is secretly, the most described off position be positioned at described second segment with
Between described negative electrode pad；
Described second through-hole structure with as described in the voltage contrast of the second connecting line different, the most described off position
Between the other end of described second through-hole structure and described second connecting line；
Described second through-hole structure with as described in the voltage contrast of the 3rd connecting line different, the most described off position
Between one end of described second through-hole structure and described 3rd connecting line.
Optionally, the open circuit localization method of described test structure also includes:
Step 4: the most described cathode terminal and described anode tap are carried out voltage contrast inspection, if institute
The voltage contrast stating cathode terminal is bright, and the voltage contrast of described anode tap is dark, then carry out the institute in step 3
State off position credible.
Optionally, in described step 3, if wherein testing the voltage of the section of the segmentation of structure described in one
Contrast has two kinds of brightness, the most described off position be positioned at described in wherein one test structure segmentation.
Optionally, high-performance poly pyrophosphate ion bundle is used to prepare section.
Optionally, scanning electron microscope is used to be scanned carrying out voltage contrast inspection.
Compared with prior art, the open circuit localization method of the test structure that the present invention provides has the advantage that
In the open circuit localization method of the test structure of present invention offer, first carry out step one: provide a survey
Examination structure, described test structure includes cathode terminal and anode tap；Then step 2 is carried out: by described negative electrode
End ground connection, and respectively described cathode terminal and described anode tap are carried out voltage contrast inspection, if described negative electrode
The voltage contrast of end is bright, and the voltage contrast of described anode tap is dark, then carry out step 3: to described negative electrode
Between end and anode tap, described test is structural segmented prepares section, the segmentation section to described test structure respectively
Carry out voltage contrast inspection, according to the voltage contrast of the segmentation section of described test structure, it is judged that described test
The off position of structure.The method can off position in assignment test structure accurately and fast.
Accompanying drawing explanation
Fig. 1 is the flow chart of the open circuit localization method of the test structure of one embodiment of the invention；
Fig. 2 is the schematic diagram of the test structure of one embodiment of the invention；
Fig. 3 is first paragraph and the schematic diagram of second segment of one embodiment of the invention；
Fig. 4-Fig. 7 is the voltage contrast schematic diagram of the section of the first paragraph of one embodiment of the invention；
Fig. 8-Figure 11 is the voltage contrast schematic diagram of the section of the second segment of one embodiment of the invention.
Detailed description of the invention
The open circuit localization method that the present invention tests structure below in conjunction with schematic diagram is retouched in more detail
State, which show the preferred embodiments of the present invention, it should be appreciated that those skilled in the art can revise at this
The present invention described, and still realize the advantageous effects of the present invention.Therefore, description below is appreciated that
Widely known for those skilled in the art, and it is not intended as limitation of the present invention.
In order to clear, whole features of practical embodiments are not described.In the following description, it is not described in detail public affairs
The function known and structure, because they can make to due to the fact that unnecessary details and chaotic.Will be understood that
In the exploitation of any practical embodiments, it is necessary to make a large amount of implementation detail to realize the specific objective of developer,
Such as according to about system or about the restriction of business, an embodiment change into another embodiment.Separately
Outward, it should think that this development is probably complicated and time-consuming, but for people in the art
It it is only routine work for Yuan.
Referring to the drawings the present invention the most more particularly described below in the following passage.According to following explanation and
Claims, advantages and features of the invention will be apparent from.It should be noted that, accompanying drawing all uses the simplest
The form changed and all use non-ratio accurately, only in order to convenient, aid in illustrating the embodiment of the present invention lucidly
Purpose.
The core concept of the present invention is, it is provided that a kind of open circuit localization method testing structure, including:
Step S11: providing a test structure, described test structure includes cathode terminal and anode tap；
Step S12: by described cathode terminal ground connection, and respectively described cathode terminal and described anode tap are carried out voltage
Contrast checks, if the voltage contrast of described cathode terminal is bright, the voltage contrast of described anode tap is dark, then
Carry out step S13；
Step S13: prepare section to test described between described cathode terminal and anode tap is structural segmented is the most right
The segmentation section of described test structure carries out voltage contrast inspection, according to the segmentation section of described test structure
Voltage contrast, it is judged that the off position of described test structure.
In the open circuit localization method of described test structure, to test described between described cathode terminal and anode tap
Structural segmented prepare section, it is to avoid whole described test structure is scanned, save the testing time；Further,
Described section is carried out voltage contrast inspection, according to the light and shade of described section, can accurately judge that out described
Off position.
It is exemplified below several embodiments of the present invention, to understand explanation present disclosure, it is understood that,
Present disclosure is not restricted to following example, and other is by the conventional skill of those of ordinary skill in the art
The improvement of art means is also within the thought range of the present invention.
Test structure in the present embodiment is described below in conjunction with Fig. 1-Figure 11.
As it is shown in figure 1, first carry out step S11: providing a test structure, described test structure includes negative electrode
End and anode tap.It is also preferred that the left described test structure 1 is electro-migration testing structure, certainly, described test
Structure 1 can also be stress migration test structure etc..
In the present embodiment, as in figure 2 it is shown, described test structure 1 includes: the first connecting line 110, first
Through-hole structure the 120, second connecting line the 130, second through-hole structure the 140, the 3rd connecting line 150, anode pad
Sheet 160 and negative electrode pad 170.Certainly, described test structure 1 can also include substrate and dielectric layer etc.
Structure, this is it will be appreciated by those skilled in the art that, and therefore not to repeat here.
Wherein, one end of described first through-hole structure 120 connects one end of described first connecting line 110, institute
The other end stating the first through-hole structure 120 connects one end of described second connecting line 130, described second through hole
One end of structure 140 connects the other end of described second connecting line 130, described second through-hole structure 140
The other end connects one end of described 3rd connecting line 150, described anode pad 160 and described first connecting line
110 are electrically connected with, and described anode pad 160 is described anode tap, and described negative electrode pad 170 is with the described 3rd
Connecting line 150 is electrically connected with, and described negative electrode pad 170 is described cathode terminal.In the present embodiment, described
Anode pad 160 is electrically connected with by an anode through-hole structure 161 with described first connecting line 110, described
Negative electrode pad 170 is electrically connected with by a negative electrode through-hole structure 171 with described 3rd connecting line 150.Certainly,
Can also realize above two by other link structures to be electrically connected with, this is that those skilled in the art is permissible
Understanding, therefore not to repeat here.
Then step S12 is carried out: by described cathode terminal (described negative electrode pad 170) ground connection, and respectively to institute
State cathode terminal (described negative electrode pad 170) and described anode tap (described anode pad 160) carries out voltage lining
Degree checks, if the voltage contrast of described cathode terminal (described negative electrode pad 170) is bright, and described anode tap (institute
State anode pad 160) voltage contrast be dark, then carry out step S13.
Can be bored a hole to substrate (substrate is exactly generally earth terminal) by focused ion bundle FIB, use focused ion
Described negative electrode pad 170 is connected to substrate by bundle FIB platinum plating metal level, it is achieved described negative electrode pad 170 connects
Ground.
Then step S13 is carried out: cut open test structure 1 division system described between described cathode terminal and anode tap is standby
Face, carries out voltage contrast inspection to the segmentation section of described test structure 1 respectively, according to described test structure 1
The voltage contrast of segmentation section, it is judged that the off position of described test structure 1.If wherein surveyed described in one
The voltage contrast of section of the segmentation of examination structure 1 has two kinds of brightness, the most described off position be positioned at described its
In one test structure segmentation in.
It is also preferred that the left use high-performance poly pyrophosphate ion bundle to prepare section.Can make with the gallium positive ion beam after focusing on
Clash into sample surfaces for incoming particle (or being primary ions), secondary ion, secondary electron etc. can be formed,
Again by collecting secondary electron imaging；Most common use have section fine cut, imaging (including voltage contrast picture),
TEM sample preparation, circuit reparation (including perforate and metal cladding line) etc..This patent use focusing from
The cutting function of son bundle.
It is also preferred that the left use scanning electron microscope to be scanned carrying out voltage contrast inspection.Described voltage lining
Degree (Voltage Contrast, voltage contrast VC) is realized by scanning electron microscope and ion cluster microscope,
It is to collect, by electronic probe, the secondary electron that primary particle incidence produces during scanning electron microscope imaging.One
When secondary cation incides sample surfaces, sample surfaces can be had positive charge summation；Work as sample surfaces
Material when being conductor and ground connection, the charge accumulated that incidence causes can promptly turn on, and electronic probe can be received
Collection is to abundant secondary electron, and voltage contrast VC is rendered as bright；When sample surfaces material is earth-free, nothing
Opinion is conductor or insulator or quasiconductor, owing to positive charge accumulation cannot discharge, produces certain electromotive force,
Secondary electron can be attracted by sample surfaces, and therefore the secondary electron of probe collection is on the low side, causes voltage to serve as a contrast
Degree VC is rendered as secretly.
In the present embodiment, as it is shown on figure 3, by one end of first through-hole structure the 120, first connecting line 110
It is divided into first paragraph 210 with one end of the second connecting line 130, and by second through-hole structure the 140, second connecting line
The other end of 130 and one end of the 3rd connecting line 150 are divided into second segment 220.
Section is prepared by described first paragraph 210, and the section of described first paragraph 210 is carried out voltage contrast inspection
Look into:
1) as shown in Figure 4, as described in whole, the voltage contrast of first paragraph 210 is bright, the most described open circuit position
Setting between described first paragraph 210 and described anode pad 160；
2) as it is shown in figure 5, the voltage contrast of first paragraph 210 as described in whole is secretly, the most described open circuit position
Setting between described first paragraph 210 and described negative electrode pad 170；
3) as shown in Figure 6, described first through-hole structure 120 and as described in the first connecting line 110 voltage lining
Degree difference, the most described off position is positioned at the first connecting line 110 described in described first through-hole structure and 120
Between one end；
4) as it is shown in fig. 7, described first through-hole structure 120 and as described in the second connecting line 130 voltage lining
Degree difference, the most described off position is positioned at described first through-hole structure 120 and described second connecting line 130
Between one end.
Section is prepared by described second segment 220, and the section of described second segment 220 is carried out voltage contrast inspection
Look into:
1 > as shown in Figure 8, as described in whole, the voltage contrast of second segment 220 is bright, the most described open circuit position
Setting between described second segment 220 and described anode pad 160；
2 > as it is shown in figure 9, the voltage contrast of second segment 220 as described in whole is secretly, the most described open circuit position
Setting between described second segment 220 and described negative electrode pad 170；
3 > as shown in Figure 10, described second through-hole structure 140 and as described in the second connecting line 130 voltage lining
Degree difference, the most described off position is positioned at described second through-hole structure 140 and described second connecting line 130
Between the other end；
4 > as shown in figure 11, described second through-hole structure 140 and as described in the 3rd connecting line 150 voltage lining
Degree difference, the most described off position is positioned at described second through-hole structure 140 and described 3rd connecting line 150
Between one end.
It is also preferred that the left as it is shown in figure 1, the open circuit localization method of described test structure also includes step 14: again
Respectively described cathode terminal and described anode tap are carried out voltage contrast inspection, if the voltage lining of described cathode terminal
Degree is for bright, and the voltage contrast of described anode tap is dark, then carry out the described off position in step 3 credible.
In sum, the present invention provides a kind of open circuit localization method testing structure, compared with prior art,
The invention have the advantages that
In the test structure that the present invention provides, first carry out step one: provide a test structure, described survey
Examination structure includes cathode terminal and anode tap；Then step 2 is carried out: by described cathode terminal ground connection, and respectively
Described cathode terminal and described anode tap are carried out voltage contrast inspection, if the voltage contrast of described cathode terminal is
Bright, the voltage contrast of described anode tap is dark, then carry out step 3: between described cathode terminal and anode tap
Described test is structural segmented prepares section, respectively the segmentation section of described test structure is carried out voltage contrast inspection
Look into, according to the voltage contrast of the segmentation section of described test structure, it is judged that the off position of described test structure.
The method can off position in assignment test structure accurately and fast.
Obviously, those skilled in the art can carry out various change and modification without deviating from this to the present invention
Bright spirit and scope.So, if the present invention these amendment and modification belong to the claims in the present invention and
Within the scope of its equivalent technologies, then the present invention is also intended to comprise these change and modification.
Claims (9)
1. the open circuit localization method testing structure, it is characterised in that including:
Step one: providing a test structure, described test structure includes cathode terminal and anode tap；
Step 2: by described cathode terminal ground connection, and respectively described cathode terminal and described anode tap are carried out voltage
Contrast checks, if the voltage contrast of described cathode terminal is bright, the voltage contrast of described anode tap is dark, then
Carry out step 3；
Step 3: prepare section to test described between described cathode terminal and anode tap is structural segmented is the most right
The segmentation section of described test structure carries out voltage contrast inspection, according to the segmentation section of described test structure
Voltage contrast, it is judged that the off position of described test structure；
Wherein, described test structure includes:
First connecting line；
First through-hole structure, one end of described first through-hole structure connects one end of described first connecting line；
Second connecting line, the other end of described first through-hole structure connects one end of described second connecting line；
Second through-hole structure, one end of described second through-hole structure connects the other end of described second connecting line；
3rd connecting line, the other end of described second through-hole structure connects one end of described 3rd connecting line；
Anode pad, described anode pad is electrically connected with described first connecting line, and described anode pad is institute
State anode tap；And
Negative electrode pad, described negative electrode pad is electrically connected with described 3rd connecting line, and described negative electrode pad is institute
State cathode terminal.
2. the open circuit localization method testing structure as claimed in claim 1, it is characterised in that described step
Three include:
One end of first through-hole structure, one end of the first connecting line and the second connecting line is divided into first paragraph, right
Described first paragraph prepares section, and the section of described first paragraph is carried out voltage contrast inspection.
3. the open circuit localization method testing structure as claimed in claim 2, it is characterised in that
The voltage contrast of first paragraph as described in whole is bright, the most described off position be positioned at described first paragraph with
Between described anode pad；
The voltage contrast of first paragraph as described in whole is secretly, the most described off position be positioned at described first paragraph with
Between described negative electrode pad；
Described first through-hole structure with as described in the voltage contrast of the first connecting line different, the most described off position
Between one end of described first through-hole structure and described first connecting line；
Described first through-hole structure with as described in the voltage contrast of the second connecting line different, the most described off position
Between one end of described first through-hole structure and described second connecting line.
4. the open circuit localization method testing structure as claimed in claim 1, it is characterised in that described step
Three include:
One end of second through-hole structure, the other end of the second connecting line and the 3rd connecting line is divided into second segment,
Section is prepared by described second segment, and the section of described second segment is carried out voltage contrast inspection.
5. the open circuit localization method testing structure as claimed in claim 4, it is characterised in that
The voltage contrast of second segment as described in whole is bright, the most described off position be positioned at described second segment with
Between described anode pad；
The voltage contrast of second segment as described in whole is secretly, the most described off position be positioned at described second segment with
Between described negative electrode pad；
Described second through-hole structure with as described in the voltage contrast of the second connecting line different, the most described off position
Between the other end of described second through-hole structure and described second connecting line；
Described second through-hole structure with as described in the voltage contrast of the 3rd connecting line different, the most described off position
Between one end of described second through-hole structure and described 3rd connecting line.
6. the open circuit localization method of the test structure as described in any one in claim 1 to 5, its feature
Being, the open circuit localization method of described test structure also includes:
Step 4: the most described cathode terminal and described anode tap are carried out voltage contrast inspection, if institute
The voltage contrast stating cathode terminal is bright, and the voltage contrast of described anode tap is dark, then described disconnected in step 3
Position, road is credible.
7. the open circuit localization method testing structure as claimed in claim 1, it is characterised in that in described step
In rapid three, if wherein the voltage contrast of the section of the segmentation of a test structure has two kinds of brightness, then described
Off position be positioned at described in wherein one test structure segmentation.
8. the open circuit localization method testing structure as claimed in claim 1, it is characterised in that use high property
Section can be prepared by focused ion bundle.
9. the open circuit localization method testing structure as claimed in claim 1, it is characterised in that use scanning
Ultramicroscope is scanned carrying out voltage contrast inspection.
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| US7592827B1 (en) * | 2007-01-12 | 2009-09-22 | Pdf Solutions, Inc. | Apparatus and method for electrical detection and localization of shorts in metal interconnect lines |
| CN102053098A (en) * | 2009-11-05 | 2011-05-11 | 上海华虹Nec电子有限公司 | Method for positioning low impedance tiny flaws in comb metal wire structure |
| CN102386167A (en) * | 2010-09-03 | 2012-03-21 | 中芯国际集成电路制造(上海)有限公司 | Structure of semiconductor device |
| CN103871922A (en) * | 2014-02-21 | 2014-06-18 | 上海华力微电子有限公司 | Method for detecting polycrystalline silicon grid etching defect by adopting voltage contrast test structure |
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| US7067335B2 (en) * | 2000-08-25 | 2006-06-27 | Kla-Tencor Technologies Corporation | Apparatus and methods for semiconductor IC failure detection |
| US6936920B2 (en) * | 2003-08-29 | 2005-08-30 | Lsi Logic Corporation | Voltage contrast monitor for integrated circuit defects |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7592827B1 (en) * | 2007-01-12 | 2009-09-22 | Pdf Solutions, Inc. | Apparatus and method for electrical detection and localization of shorts in metal interconnect lines |
| CN102053098A (en) * | 2009-11-05 | 2011-05-11 | 上海华虹Nec电子有限公司 | Method for positioning low impedance tiny flaws in comb metal wire structure |
| CN102386167A (en) * | 2010-09-03 | 2012-03-21 | 中芯国际集成电路制造(上海)有限公司 | Structure of semiconductor device |
| CN103871922A (en) * | 2014-02-21 | 2014-06-18 | 上海华力微电子有限公司 | Method for detecting polycrystalline silicon grid etching defect by adopting voltage contrast test structure |
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