CN104064685B - Flexible display substrates and manufacture method thereof and flexible display apparatus - Google Patents
Flexible display substrates and manufacture method thereof and flexible display apparatus Download PDFInfo
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- CN104064685B CN104064685B CN201410211589.XA CN201410211589A CN104064685B CN 104064685 B CN104064685 B CN 104064685B CN 201410211589 A CN201410211589 A CN 201410211589A CN 104064685 B CN104064685 B CN 104064685B
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- 239000000758 substrate Substances 0.000 title claims abstract description 121
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 230000000903 blocking Effects 0.000 claims abstract description 57
- 239000010409 thin film Substances 0.000 claims abstract description 54
- 238000009413 insulation Methods 0.000 claims description 47
- 239000000463 material Substances 0.000 claims description 23
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 5
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000005439 thermosphere Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 17
- 238000000034 method Methods 0.000 description 24
- 238000002161 passivation Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 206010020843 Hyperthermia Diseases 0.000 description 3
- 230000036031 hyperthermia Effects 0.000 description 3
- -1 Diol ester Chemical class 0.000 description 2
- 229920001721 Polyimide Polymers 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000006011 modification reaction Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N Silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003139 buffering Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- KYTZHLUVELPASH-UHFFFAOYSA-N naphthalene-1,2-dicarboxylic acid Chemical compound C1=CC=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 KYTZHLUVELPASH-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000001681 protective Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000003595 spectral Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Abstract
The invention discloses a kind of flexible display substrates and manufacture method thereof and flexible display apparatus.This flexible display substrates includes: flexible substrates, described flexible substrates be formed above thin film transistor (TFT) and luminescent device, being formed with light blocking layer between described flexible substrates and described thin film transistor (TFT), described light blocking layer is for stopping the laser irradiated from described flexible substrates side.In the flexible display substrates of present invention offer and the technical scheme of manufacture method and flexible display apparatus thereof, light blocking layer it is formed with between flexible substrates and thin film transistor (TFT), this light blocking layer can stop the laser irradiated from flexible substrates side, avoid laser and thin film transistor (TFT) is caused damage, thus avoid the threshold voltage shift of thin film transistor (TFT) and tft characteristics lost efficacy, and then avoid flexible display substrates and produce display effect after laser lift-off and decline the problem that even can not normally show.
Description
Technical field
The present invention relates to Display Technique field, particularly to a kind of flexible display substrates and manufacturer thereof
Method and flexible display apparatus.
Background technology
Flexible display apparatus has the advantages such as easy to carry and bent curling, therefore becomes current
The focus of research and development in Display Technique.
In prior art, the manufacture of flexible display substrates generally comprises the steps that on bearing substrate
Flexible substrate, prepare on a flexible substrate thin film transistor (TFT) (Thin Film Transistor,
Be called for short: TFT) and Organic Light Emitting Diode (Organic Light-Emitting Diode, abbreviation:
OLED) to form flexible display substrates, the flexible display substrates will made again after having prepared
Strip down from bearing substrate.Laser lift-off is a kind of conventional flexible display substrates lift-off technology,
Laser is used to irradiate from bearing substrate side, by laser focusing in bearing substrate and the bonding of flexible substrates
Layer, thus under the effect of laser, realize the separation of bearing substrate and flexible substrates.
But, during laser lift-off, laser can be irradiated to thin film transistor (TFT) through flexible substrates,
Thin film transistor (TFT) is caused damage, and this will cause threshold voltage shift and the thin film of thin film transistor (TFT)
Transistor characteristic lost efficacy, thus caused flexible display substrates to produce after laser lift-off under display effect
The problem that fall even can not normally show.
Summary of the invention
The present invention provides a kind of flexible display substrates and manufacture method thereof and flexible display apparatus, is used for
Threshold voltage shift and the tft characteristics of avoiding thin film transistor (TFT) lost efficacy, thus avoided flexibility
Display base plate produces display effect after laser lift-off and declines the problem that even can not normally show.
For achieving the above object, the invention provides a kind of flexible display substrates, including: flexible base
The end, described flexible substrates be formed above thin film transistor (TFT) and luminescent device, described flexible substrates with
Being formed with light blocking layer between described thin film transistor (TFT), described light blocking layer is for stopping from described flexible substrates
The laser that side is irradiated.
Alternatively, described light blocking layer is reflector layer, and described reflector layer is for reflecting from described flexible base
The laser that side, the end is irradiated.
Alternatively, the material of described reflector layer includes aluminum or silver.
Alternatively, the thickness of described light blocking layer includes: 10nm to 100nm.
Alternatively, also include: the thermal insulation layer between described light blocking layer and described thin film transistor (TFT),
Described thermal insulation layer is for completely cutting off the heat that described laser produces.
Alternatively, the material of described thermal insulation layer includes zirconium oxide.
Alternatively, the thickness of described thermal insulation layer includes: 10nm to 500nm.
For achieving the above object, the invention provides a kind of flexible display apparatus, including: above-mentioned soft
Property display base plate.
For achieving the above object, the invention provides the manufacture method of a kind of flexible display substrates, bag
Include:
Bearing substrate is formed flexible substrates；
Forming light blocking layer above described flexible substrates, described light blocking layer is for stopping from described soft
Property substrate side irradiate laser；
Thin film transistor (TFT) and luminescent device is formed above described light blocking layer；
By laser lift-off, flexible substrates is separated with bearing substrate.
Alternatively, described above described light blocking layer, form thin film transistor (TFT) and luminescent device before
Also include:
Above described flexible substrates formed thermal insulation layer, described thermal insulation layer be positioned at described light blocking layer with
Between described thin film transistor (TFT) and described thermal insulation layer for completely cut off described laser produce heat.
The method have the advantages that
Flexible display substrates that the present invention provides and manufacture method and the technical side of flexible display apparatus
In case, being formed with light blocking layer between flexible substrates and thin film transistor (TFT), this light blocking layer can stop from flexibility
The laser that substrate side is irradiated, it is to avoid thin film transistor (TFT) is caused damage by laser, thus avoids thin
The threshold voltage shift of film transistor and tft characteristics lost efficacy, and then avoided Flexible Displays
Substrate produces display effect after laser lift-off and declines the problem that even can not normally show.
Accompanying drawing explanation
The structural representation of a kind of flexible display substrates that Fig. 1 provides for the embodiment of the present invention one；
The flow process of the manufacture method of a kind of flexible display substrates that Fig. 2 provides for the embodiment of the present invention three
Figure；
Fig. 3 a is the schematic diagram forming flexible substrates in embodiment three；
Fig. 3 b is the schematic diagram forming light blocking layer in embodiment three；
Fig. 3 c is the schematic diagram forming thermal insulation layer in embodiment three；
Fig. 3 d is the schematic diagram forming cushion in embodiment three；
Fig. 3 e is the schematic diagram forming thin film transistor (TFT) in embodiment three.
Detailed description of the invention
For making those skilled in the art be more fully understood that technical scheme, below in conjunction with attached
Flexible display substrates that the present invention is provided by figure and manufacture method and flexible display apparatus thereof are carried out in detail
Describe.
The structural representation of a kind of flexible display substrates that Fig. 1 provides for the embodiment of the present invention one, as
Shown in Fig. 1, this flexible display substrates includes: flexible substrates 11, and the top of flexible substrates 11 is formed
There are thin film transistor (TFT) 12 and luminescent device, are formed between flexible substrates 11 and thin film transistor (TFT) 12
Light blocking layer 13, light blocking layer 13 is for stopping the laser irradiated from flexible substrates 11 side.
Preferably, the material of flexible substrates comprises the steps that polyimides (PI), poly-naphthalenedicarboxylic acid second
Diol ester (PEN) or polyethylene terephthalate (PET) etc..In the present embodiment, preferably
Ground, light blocking layer 13 is reflector layer.This reflector layer is for swashing that reflection is irradiated from flexible substrates side
Light, to realize stopping the laser irradiated from flexible substrates 11 side, thus avoids laser to thin film
The irradiation of transistor 12.
Wherein, the material of reflector layer can be the metal with good reflection effect, such as: reflective
The material of layer can include aluminum or silver, wherein it is preferred to, the material of reflector layer is aluminum, because
Aluminum all has the highest reflectance in the widest spectral region, can be to the laser used when peeling off
There is good reflecting effect, and aluminum uses extensively and reasonable price.Or, should in reality
In with, the material of reflector layer can also be organic reflectorized material.
Preferably, the thickness of light blocking layer is: 10nm to 100nm, can either ensure that this light blocking layer has
Having the good effect blocking laser, it is not the thickest for enabling to again thickness, and this thickness range is for this
It it is preferred thickness range for embodiment.
Alternatively, this flexible display substrates also includes: be positioned at light blocking layer 13 and thin film transistor (TFT) 12
Between thermal insulation layer 14, thermal insulation layer 14 is for completely cutting off the heat that laser produces, thus avoids laser
Thin film transistor (TFT) 12 is caused damage by the heat produced.
Preferably, the material of thermal insulation layer 14 is zirconium oxide, and zirconium oxide has good effect of heat insulation.
In actual applications, thermal insulation layer 14 can also use other to possess the material of effect of heat insulation, the most not
Enumerate again.Thin film transistor (TFT) and luminescent device can be risen together with light blocking layer 13 by this thermal insulation layer 14
To protective effect.
Preferably, the thickness of thermal insulation layer 14 includes: 10nm to 500nm, can either ensure that this is heat insulation
Layer there is good heat-blocking action, it is not the thickest for enabling to again thickness, this thickness range for
It it is preferred thickness range for the present embodiment.
In the present embodiment, thin film transistor (TFT) 12 includes: grid 121, active layer 122, source electrode 123
With drain electrode 124, active layer 122 is positioned at the top of grid 121, source electrode 123 and drain electrode 124 and is positioned at
On active layer 122.Wherein, gate insulation layer 15, active layer 122 it are formed with on grid 121
It is positioned on gate insulation layer 15.Preferably, the material of gate insulation layer 15 is the silicon nitride of composite construction
And silicon oxide (SiOx) (SiNx).Preferably, the material of active layer 122 is indium gallium zinc oxide
(IGZO).Preferably, active layer 122 is also formed with etching barrier layer 16, source electrode 123 and leakage
Pole 124 part is positioned on etching barrier layer 16.Preferably, the material of etching barrier layer 16 is
SiOx.Further, it is also formed with passivation layer 17 on source electrode 123 and drain electrode 124, it is preferable that
The material of passivation layer 17 is SiOx.Further, this flexible display substrates also includes: pixel electrode
18, this pixel electrode 18 is positioned on passivation layer 17, and by being arranged at the mistake on passivation layer 17
Hole 19 is connected with drain electrode 124.Preferably, the material of pixel electrode 18 is indium tin oxide (ITO).
In the present embodiment, alternatively, this flexible display substrates also includes: cushion 20.This buffering
Layer 20 is formed on light blocking layer 13.Then grid 121 is formed on cushion 20.Preferably,
The material of cushion 20 can be SiNx.This cushion 20 is used for stopping water oxygen.
In the present embodiment, pixel electrode 18 is an electrode of luminescent device, such as: anode.And
This pixel electrode 18 is connected with thin film transistor (TFT) 12.Specifically, this luminescent device can be OLED.
In the technical scheme of the flexible display substrates that the present embodiment provides, flexible substrates and film crystal
Being formed with light blocking layer between pipe, this light blocking layer can stop the laser irradiated from flexible substrates side, it is to avoid
Thin film transistor (TFT) is caused damage by laser, thus avoid the threshold voltage shift of thin film transistor (TFT) with
And tft characteristics lost efficacy, and then avoid flexible display substrates and produce display after laser lift-off
Effect declines the problem that even can not normally show.Can also arrange between light blocking layer and thin film transistor (TFT)
Having thermal insulation layer, this thermal insulation layer can completely cut off the heat that laser produces, thus effectively prevent what laser produced
The damage that thin film transistor (TFT) and luminescent device are caused by heat, further avoid flexible display substrates and exists
Produce display effect after laser lift-off and decline the problem that even can not normally show.When light blocking layer is reflective
During layer, reflector layer can reflect the laser irradiated from flexible substrates side, on the one hand avoids laser to thin
Film transistor causes damage, on the other hand can also conduct the heat that laser produces to other positions,
Thus effectively prevent the generation of localized hyperthermia, further avoid the heat of laser generation to film crystal
The damage that pipe or luminescent device cause.
The embodiment of the present invention two provides a kind of flexible display apparatus, and this flexible display apparatus includes:
Flexible display substrates.This flexible display substrates can use the Flexible Displays base that above-described embodiment one provides
Plate, the most no longer specifically describes.
In the technical scheme of the flexible display apparatus that the present embodiment provides, flexible substrates and film crystal
Being formed with light blocking layer between pipe, this light blocking layer can stop the laser irradiated from flexible substrates side, it is to avoid
Thin film transistor (TFT) is caused damage by laser, thus avoid the threshold voltage shift of thin film transistor (TFT) with
And tft characteristics lost efficacy, and then avoid flexible display substrates and produce display after laser lift-off
Effect declines the problem that even can not normally show.Can also arrange between light blocking layer and thin film transistor (TFT)
Having thermal insulation layer, this thermal insulation layer can completely cut off the heat that laser produces, thus effectively prevent what laser produced
The damage that thin film transistor (TFT) and luminescent device are caused by heat, further avoid flexible display substrates and exists
Produce display effect after laser lift-off and decline the problem that even can not normally show.When light blocking layer is reflective
During layer, reflector layer can reflect the laser irradiated from flexible substrates side, on the one hand avoids laser to thin
Film transistor causes damage, on the other hand can also conduct the heat that laser produces to other positions,
Thus effectively prevent the generation of localized hyperthermia, further avoid the heat of laser generation to film crystal
The damage that pipe or luminescent device cause.
The flow process of the manufacture method of a kind of flexible display substrates that Fig. 2 provides for the embodiment of the present invention three
Figure, as in figure 2 it is shown, the method includes:
Step 101, on bearing substrate formed flexible substrates.
Wherein, bearing substrate can use transparent glass or sapphire substrate, below to carry base
Plate illustrates as a example by using glass substrate.Fig. 3 a is to form showing of flexible substrates in embodiment three
It is intended to, as shown in Figure 3 a, forms flexible substrates 11 on the glass substrate 10.Specifically, can pass through
It is coated with or pastes technique and form flexible substrates 11 on the glass substrate 10.
Step 102, forming light blocking layer above flexible substrates, light blocking layer is for stopping from flexible base
The laser that side, the end is irradiated.
Fig. 3 b is the schematic diagram forming light blocking layer in embodiment three, as shown in Figure 3 b, at flexible base
Light blocking layer 13 is formed at the end 11.Specifically, sputter coating (Sputter) technique can be passed through in flexibility
Light blocking layer 13 is formed in substrate 11.Preferably, light blocking layer 13 is reflector layer.To light blocking layer 13
Specifically describe and can be found in the description in above-described embodiment one.
Alternatively, also include after step 102: above flexible substrates, form thermal insulation layer, every
Thermosphere is between light blocking layer and thin film transistor (TFT) and thermal insulation layer is for completely cutting off the heat that laser produces.
Fig. 3 c is the schematic diagram forming thermal insulation layer in embodiment three, as shown in Figure 3 c, at light blocking layer
Thermal insulation layer 14 is formed on 13.Specifically, evaporation process, sputter coating can be heated by electron beam
Technique or plasma enhanced chemical vapor deposition method (PECVD) technique are heavy on light blocking layer 13
Long-pending thermal insulation layer 14.
Alternatively, also include after step 102: on thermal insulation layer, form cushion.
Fig. 3 d is the schematic diagram forming cushion in embodiment three, as shown in Figure 3 d, at thermal insulation layer
Cushion 20 is formed on 14.Specifically, pecvd process can be passed through and deposit slow on thermal insulation layer 14
Rush layer 20.
In the present embodiment, thermal insulation layer 14 may also operate as the effect of exclusion of water oxygen, thus is passing through
Relatively low technological temperature can be used during pecvd process buffer layer 20, and then effectively prevent deposition
During cushion 20 technological temperature too high and cause flexible substrates deformation problem.
Step 103, above light blocking layer, form thin film transistor (TFT) and luminescent device.
Fig. 3 e is the schematic diagram forming thin film transistor (TFT) in embodiment three, as shown in Figure 3 e, specifically
Ground, step 103 comprises the steps that
Step 1031, on cushion 20, form grid 121 and grid line.
Specifically, grid metal level can be deposited on cushion 20 by sputter coating process, to grid gold
Belong to layer and be patterned technique formation grid 121 and grid line.Wherein, grid line the most specifically draws.
Step 1032, on grid 121 and grid line formed gate insulation layer 15.
Specifically, gate insulation layer 15 can be deposited on grid 121 and grid line by pecvd process.
Step 1033, on gate insulation layer 15, it is formed with active layer 122.
Specifically, active layer material can be deposited on gate insulation layer 15 by sputter coating process, right
Active layer material is patterned technique and is formed with active layer 122.
Step 1034, on active layer 122 formed etching barrier layer 16.
Specifically, pecvd process deposition-etch barrier material on active layer 122 can be passed through,
Etching barrier layer materials is carried out dry carving technology and forms etching barrier layer 16.
Step 1035, on etching barrier layer 16, form source electrode 123, drain electrode 124 and data wire.
Specifically, source and drain metal level can be deposited on etching barrier layer 16 by sputter coating process,
Source and drain metal level is patterned technique and forms source electrode 123, drain electrode 124 and data wire.Wherein,
Data wire the most specifically draws.
Step 1036, source electrode 123, drain electrode 124 and data wire on formed passivation layer 17.
Specifically, can be deposited on source electrode 123, drain electrode 124 and data wire by pecvd process
Passivation layer 17.
Step 1037, on passivation layer 17 formed via 19.
Specifically, via 19 can be formed on passivation layer 17 by dry carving technology.
Step 1038, on passivation layer 17 formed luminescent device, this luminescent device includes pixel electrode
18, pixel electrode 18 is connected with drain electrode 124 by via 19.
Specifically, pixel electrode material can be formed on passivation layer 17 by sputter coating process, right
Pixel electrode material is patterned technique and forms pixel electrode 18.Wherein, luminescent device can be OLED,
Other structure in luminescent device the most specifically draws.
Step 104, by laser lift-off, flexible substrates is separated with glass substrate.
By laser lift-off, flexible substrates 11 and glass substrate 10 are separated, thus formed such as
Flexible display substrates shown in Fig. 1.
In the present embodiment, patterning processes comprise the steps that photoresist coat, expose, develop, etch and
The techniques such as photoresist lift off.
The manufacture method of the flexible display substrates that the present embodiment provides can be used for manufacturing above-described embodiment one
The flexible display substrates provided, the specific descriptions of structure each to flexible display substrates can be found in embodiment
One, here is omitted.
The flexible display substrates that the manufacture method of the flexible display substrates that the present embodiment provides produces
In technical scheme, being formed with light blocking layer between flexible substrates and thin film transistor (TFT), this light blocking layer can stop
The laser irradiated from flexible substrates side, it is to avoid thin film transistor (TFT) is caused damage by laser, thus keeps away
Threshold voltage shift and the tft characteristics of having exempted from thin film transistor (TFT) lost efficacy, and then avoided soft
Property display base plate produce display effect after laser lift-off and decline the problem that even can not normally show.Gear
Being also provided with thermal insulation layer between photosphere and thin film transistor (TFT), this thermal insulation layer can completely cut off what laser produced
Heat, thus the damage that thin film transistor (TFT) and luminescent device are caused by the heat that effectively prevent laser generation
Wound, further avoid flexible display substrates produce after laser lift-off display effect decline even can not
The problem of normal display.When light blocking layer is reflector layer, reflector layer can reflect and shine from flexible substrates side
On the one hand the laser penetrated, avoids laser and thin film transistor (TFT) causes damage, on the other hand can also be by
The heat that laser produces conducts to other positions, thus effectively prevents the generation of localized hyperthermia, further
Avoid the damage that thin film transistor (TFT) or luminescent device are caused by the heat of laser generation.
It is understood that the principle that is intended to be merely illustrative of the present of embodiment of above and use
Illustrative embodiments, but the invention is not limited in this.For the ordinary skill in this area
For personnel, without departing from the spirit and substance in the present invention, can make various modification and
Improving, these modification and improvement are also considered as protection scope of the present invention.
Claims (6)
1. a flexible display substrates, including: flexible substrates, the top of described flexible substrates is formed
There are thin film transistor (TFT) and luminescent device, it is characterised in that described flexible substrates and described thin film transistor (TFT)
Between be formed with light blocking layer, described light blocking layer for stop from described flexible substrates side irradiate swash
Light, also includes: the thermal insulation layer between described light blocking layer and described thin film transistor (TFT), described heat insulation
Layer is for completely cutting off the heat that described laser produces, and the material of described thermal insulation layer includes zirconium oxide, described every
The thickness of thermosphere is 10nm to 500nm.
Flexible display substrates the most according to claim 1, it is characterised in that described light blocking layer
For reflector layer, the laser that described reflector layer irradiates from described flexible substrates side for reflection.
Flexible display substrates the most according to claim 2, it is characterised in that described reflector layer
Material include aluminum or silver.
4. according to the arbitrary described flexible display substrates of claims 1 to 3, it is characterised in that institute
The thickness stating light blocking layer is: 10nm to 100nm.
5. a flexible display apparatus, it is characterised in that including: the claims 1 to 4
Flexible display substrates described in one.
6. the manufacture method of a flexible display substrates, it is characterised in that including:
Bearing substrate is formed flexible substrates；
Forming light blocking layer above described flexible substrates, described light blocking layer is for stopping from described soft
Property substrate side irradiate laser；
Forming thermal insulation layer above described flexible substrates, the material of described thermal insulation layer includes zirconium oxide,
The thickness of described thermal insulation layer is 10nm to 500nm, and it is brilliant with thin film that described thermal insulation layer is positioned at described light blocking layer
Between body pipe and described thermal insulation layer for completely cut off described laser produce heat；
Thin film transistor (TFT) and luminescent device is formed above described light blocking layer；
By laser lift-off, flexible substrates is separated with bearing substrate.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410211589.XA CN104064685B (en) | 2014-05-19 | Flexible display substrates and manufacture method thereof and flexible display apparatus | |
| PCT/CN2014/089298 WO2015176487A1 (en) | 2014-05-19 | 2014-10-23 | Flexible display substrate and manufacturing method therefor, and flexible display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410211589.XA CN104064685B (en) | 2014-05-19 | Flexible display substrates and manufacture method thereof and flexible display apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104064685A CN104064685A (en) | 2014-09-24 |
| CN104064685B true CN104064685B (en) | 2016-11-30 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202145468U (en) * | 2011-05-06 | 2012-02-15 | 京东方科技集团股份有限公司 | Flexible organic electroluminescent device |
| CN103545463A (en) * | 2013-09-27 | 2014-01-29 | Tcl集团股份有限公司 | Flexible display device and manufacturing method thereof |
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202145468U (en) * | 2011-05-06 | 2012-02-15 | 京东方科技集团股份有限公司 | Flexible organic electroluminescent device |
| CN103545463A (en) * | 2013-09-27 | 2014-01-29 | Tcl集团股份有限公司 | Flexible display device and manufacturing method thereof |
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