CN104062788A - Pixel structure, array substrate and liquid crystal display panel - Google Patents
Pixel structure, array substrate and liquid crystal display panel Download PDFInfo
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- CN104062788A CN104062788A CN201410326800.2A CN201410326800A CN104062788A CN 104062788 A CN104062788 A CN 104062788A CN 201410326800 A CN201410326800 A CN 201410326800A CN 104062788 A CN104062788 A CN 104062788A
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Abstract
The invention provides a pixel structure, an array substrate and a liquid crystal display panel. The pixel structure comprises a grid line, a data line and a thin-film transistor set. The thin-film transistor set comprises a plurality of thin-film transistors which are connected in series. The thin-film transistor set is provided with an exposed source electrode, an exposed drain electrode and a plurality of exposed grid electrodes. The exposed source electrode is connected with the data line. The exposed grid electrodes are connected with the grid line. According to the pixel structure, the array substrate and the liquid crystal display panel, the multiple thin-film transistors are arranged in one pixel structure, so that total resistance is increased, leakage current is reduced, power consumption of products is reduced, and the quantity of consumed electricity is also reduced.
Description
Technical field
The present invention relates to technical field of liquid crystal display, relate in particular to a kind of dot structure, array base palte and display panels.
Background technology
Development along with the information age, the position that display technique and display device occupy in infotech is more and more important, and TFT-LCD(Thin Film Transistor-LCD) because it has the advantages such as low in energy consumption, lightweight, thin thickness, volume be little, radiationless, in display technique, occupied critical role.
Thin Film Transistor-LCD is by array glass substrate and color film glass substrate to box, and the rear envelope of finding time is therebetween filled with liquid crystal material.
Intelligence wearing product is constantly universal now, and the intelligent small product size of dressing is all less, and power supply amount is less, causes needs often to charge.Display panels is dressed the critical piece of product as intelligence, its power consumption directly affects the power consumption that intelligence is dressed product.A dot structure of existing liquid crystal display panel of thin film transistor generally only comprises a pixel electrode and a thin film transistor (TFT), there is larger leakage current, while causing it to be applied to intelligence wearing product, power consumption is higher, need to often charge, very inconvenient.
Summary of the invention
The object of the present invention is to provide a kind of dot structure, array base palte and display panels, can effectively reduce leakage current, thereby reduce power consumption, minimizing power consumption.
For achieving the above object, the invention provides a kind of dot structure, comprise: a grid line, a data line and a thin film transistor (TFT) group, this thin film transistor (TFT) group comprises the thin film transistor (TFT) of several series connection, this thin film transistor (TFT) group has a source electrode exposing, a drain electrode exposing and several grid exposing, this source electrode exposing is connected with described data line, and several grids that expose are connected with described grid line.
Further, each thin film transistor (TFT) includes one source pole, a drain electrode, a grid, and connected any two thin film transistor (TFT)s are that source electrode is connected with drain electrode.
Further, each thin film transistor (TFT) includes semi-conductor layer, and the semiconductor layer between several thin film transistor (TFT)s is not connected mutually.
Further, described semiconductor layer is a-Si layer.
Further, described grid and described grid line are integrally formed.
The present invention also provides a kind of array base palte, comprises several dot structures, and this dot structure is the dot structure described in above-mentioned any one.
The present invention also provides a kind of display panels, comprises above-mentioned array base palte.
Beneficial effect of the present invention: dot structure of the present invention, array base palte and display panels, in a dot structure, several thin film transistor (TFT)s are set, increase all-in resistance, thereby reduced leakage current, and then reduced product power consumption, minimizing power consumption.
Accompanying drawing explanation
Fig. 1 is the structural representation of dot structure of the present invention;
Fig. 2 is the vertical view of array base palte of the present invention;
Fig. 3 is the structural representation of liquid crystal panel of the present invention.
Embodiment
Below in conjunction with accompanying drawing, describe mechanism of the present invention and principle of work in detail.For better explanation the present embodiment, some parts of accompanying drawing have omission, zoom in or out, and do not represent the size of actual product; To those skilled in the art, in accompanying drawing some known configurations and explanation thereof may to omit be understandable.The corresponding same or analogous parts of same or analogous label.
Refer to shown in Fig. 1, the invention provides a kind of dot structure 10, comprise a grid line 11, a data line 12 and a thin film transistor (TFT) group 13, this thin film transistor (TFT) group 13 comprises the thin film transistor (TFT) 130 of several series connection, described thin film transistor (TFT) group 13 has a source electrode 131 ' exposing, a drain electrode 132 ' exposing and several grid 133 ' exposing, this source electrode exposing 131 is connected with described data line 12, and several grids 133 ' that expose are connected with described grid line 11.Described grid can be integrally formed with described grid line 11, convenient making.
Each thin film transistor (TFT) 130 includes one source pole 131, drain electrode 132, one grid 133 and a semi-conductor layer 134, any two thin film transistor (TFT)s 13 that are connected are that source electrode 131 is connected with drain electrode 132, two thin film transistor (TFT)s 131 in thin film transistor (TFT) group 130 two ends have respectively a drain electrode 132 not being connected with source electrode 131 with drain electrode 132 source electrodes that are connected 131 or, and this source electrode 131 and drain electrode 132 are thin film transistor (TFT) group 13 source electrode 131 ' exposing and the drain electrode 132 ' exposing.The grid 133 of each thin film transistor (TFT) 130 is the grid 133 ' exposing of described thin film transistor (TFT) group 13.Described several thin film transistor (TFT) 130 is preferably arranged side by side, to take less space.Semiconductor layer 134 between several thin film transistor (TFT)s 130 is not connected mutually, thereby increases the all-in resistance of whole dot structure 10, reduces leakage current.This semiconductor layer 134 is generally a-Si layer.
The present invention arranges several thin film transistor (TFT)s 130 in a dot structure 10, has increased all-in resistance, thereby can effectively reduce leakage current for having the dot structure of single thin film transistor (TFT).Wherein interconnective source electrode 131 is generally connected by metal wire with drain electrode 132, by controlling the live width of metal wire and the size that length can be controlled all-in resistance, thereby controls the size of leakage current.When being applied in display panels, this dot structure 10 can effectively reduce the power consumption of display panels.This dot structure 10 is applicable to transmission-type, fully-reflected type or semi-transparent semi-reflective display panels, applied widely.
Refer to shown in Fig. 2, the present invention also provides a kind of array base palte 20, comprises several above-mentioned dot structures 10, several dot structure 10 array distribution.This array base palte 20 has lower leakage current, low in energy consumption.
Refer to shown in Fig. 3, the present invention also provides a kind of display panels 30, comprises the upper polaroid 31, colored filter 32, liquid crystal layer 33, array base palte 20 and the lower polaroid 35 that set gradually from top to bottom, and this array base palte 20 is above-mentioned array base palte 20.This display panels 30 has lower leakage current, thereby has lower power consumption, and power consumption is low, is applicable to using for a long time and is applied to intelligence dressing in product.
In sum, dot structure of the present invention, array base palte and display panels arrange several thin film transistor (TFT)s in a dot structure, have increased all-in resistance, thereby have reduced leakage current, and then reduced product power consumption, minimizing power consumption.
Obviously, the above embodiment of the present invention is only for example of the present invention is clearly described, and is not the restriction to embodiments of the present invention.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without also giving all embodiments.All any modifications of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in the protection domain of the claims in the present invention.
Claims (7)
1. a dot structure, it is characterized in that, comprise: a grid line, a data line and a thin film transistor (TFT) group, this thin film transistor (TFT) group comprises the thin film transistor (TFT) of several series connection, this thin film transistor (TFT) group has a source electrode exposing, a drain electrode exposing and several grid exposing, this source electrode exposing is connected with described data line, and several grids that expose are connected with described grid line.
2. dot structure according to claim 1, is characterized in that, each thin film transistor (TFT) includes one source pole, a drain electrode, a grid, and connected any two thin film transistor (TFT)s are that source electrode is connected with drain electrode.
3. dot structure according to claim 1, is characterized in that, each thin film transistor (TFT) includes semi-conductor layer, and the semiconductor layer between several thin film transistor (TFT)s is not connected mutually.
4. dot structure according to claim 3, is characterized in that, described semiconductor layer is a-Si layer.
5. dot structure according to claim 1, is characterized in that, described grid and described grid line are integrally formed.
6. an array base palte, is characterized in that, comprises several dot structures, and this dot structure is the dot structure described in any one in claim 1-5.
7. a display panels, is characterized in that, comprises array base palte claimed in claim 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410326800.2A CN104062788A (en) | 2014-07-10 | 2014-07-10 | Pixel structure, array substrate and liquid crystal display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410326800.2A CN104062788A (en) | 2014-07-10 | 2014-07-10 | Pixel structure, array substrate and liquid crystal display panel |
Publications (1)
| Publication Number | Publication Date |
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| CN104062788A true CN104062788A (en) | 2014-09-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410326800.2A Pending CN104062788A (en) | 2014-07-10 | 2014-07-10 | Pixel structure, array substrate and liquid crystal display panel |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108091312A (en) * | 2018-01-05 | 2018-05-29 | 信利半导体有限公司 | The display panel and display module of a kind of low-power consumption |
| CN108962158A (en) * | 2018-06-15 | 2018-12-07 | 信利半导体有限公司 | A kind of the ULP gate driving circuit and its control circuit of 3Tr |
| CN113534561A (en) * | 2020-04-21 | 2021-10-22 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof and display device |
| CN113568232A (en) * | 2021-09-27 | 2021-10-29 | 南京初芯集成电路有限公司 | Pixel unit, array substrate, driving method, liquid crystal panel and liquid crystal display screen |
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| US20060152470A1 (en) * | 2005-01-10 | 2006-07-13 | Sang-Uk Kim | Liquid crystal display device and method of driving the same |
| CN101452161A (en) * | 2007-12-05 | 2009-06-10 | 群康科技(深圳)有限公司 | Lcd |
| WO2011052266A1 (en) * | 2009-10-29 | 2011-05-05 | シャープ株式会社 | Pixel circuit and display apparatus |
| CN102162959A (en) * | 2010-02-23 | 2011-08-24 | 东莞万士达液晶显示器有限公司 | Liquid crystal display device and drive method thereof |
| CN102289118A (en) * | 2010-06-21 | 2011-12-21 | 卡西欧计算机株式会社 | Liquid crystal display element |
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| US20060152470A1 (en) * | 2005-01-10 | 2006-07-13 | Sang-Uk Kim | Liquid crystal display device and method of driving the same |
| CN101452161A (en) * | 2007-12-05 | 2009-06-10 | 群康科技(深圳)有限公司 | Lcd |
| WO2011052266A1 (en) * | 2009-10-29 | 2011-05-05 | シャープ株式会社 | Pixel circuit and display apparatus |
| CN102162959A (en) * | 2010-02-23 | 2011-08-24 | 东莞万士达液晶显示器有限公司 | Liquid crystal display device and drive method thereof |
| CN102289118A (en) * | 2010-06-21 | 2011-12-21 | 卡西欧计算机株式会社 | Liquid crystal display element |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108091312A (en) * | 2018-01-05 | 2018-05-29 | 信利半导体有限公司 | The display panel and display module of a kind of low-power consumption |
| WO2019134193A1 (en) * | 2018-01-05 | 2019-07-11 | 信利半导体有限公司 | Low power consumption display panel and display module |
| CN108962158A (en) * | 2018-06-15 | 2018-12-07 | 信利半导体有限公司 | A kind of the ULP gate driving circuit and its control circuit of 3Tr |
| CN113534561A (en) * | 2020-04-21 | 2021-10-22 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof and display device |
| WO2021213242A1 (en) * | 2020-04-21 | 2021-10-28 | 京东方科技集团股份有限公司 | Display substrate and manufacturing method therefor, and display device |
| CN113534561B (en) * | 2020-04-21 | 2022-12-30 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof and display device |
| CN113568232A (en) * | 2021-09-27 | 2021-10-29 | 南京初芯集成电路有限公司 | Pixel unit, array substrate, driving method, liquid crystal panel and liquid crystal display screen |
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Application publication date: 20140924 |