CN104062705A - Si-based one-dimensional dielectric-surface plasma coupling waveguide device - Google Patents
Si-based one-dimensional dielectric-surface plasma coupling waveguide device Download PDFInfo
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- CN104062705A CN104062705A CN201410271444.9A CN201410271444A CN104062705A CN 104062705 A CN104062705 A CN 104062705A CN 201410271444 A CN201410271444 A CN 201410271444A CN 104062705 A CN104062705 A CN 104062705A
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Abstract
The invention discloses a Si-based one-dimensional dielectric-surface plasma coupling waveguide device which is provided with a one-dimensional nanowire structure and at least comprises two nano column-shaped materials, the nano column-shaped materials at least comprise one silicon material and at least one metal silicide material, and the nano column-shaped materials with different material attributes are connected in an alternating mode. The device is coupled with a surface plasma mode in a one-dimensional metal silicide waveguide through an optical waveguide mode in a one-dimensional nana waveguide to form the one-dimensional coupling waveguide device. The device can adjust features of a surface plasma resonance mode by changing the length and diameter ratio of the one-dimensional metal silicide waveguide, and accordingly coupling efficiency of the silicon optical waveguide and the surface plasma waveguide is improved. Manufacturing of the device is compatible with a large-scale integrated circuit process, and the device works in an infrared communication wave band and has excellent application prospects in the field of Si-based photoelectricity and surface plasma integration field.
Description
Technical field
The invention belongs to micro-nano optoelectronic device and integration field, relate to more specifically silica-based light-electricity and surface plasma integration field.
Background technology
Along with reducing rapidly of standard integrated circuit technology characteristic dimension, the density of device significantly improves.The energy loss that electricity interlinkage brings and electromagnetic interference (EMI) have become the bottleneck of the silica-based microelectronic integrated circuit development of restriction.Integrated Light interconnection relies on its significant advantage in transmission bandwidth, antijamming capability and energy loss, become solve electricity interlinkage problem important by way of.Yet, because photon does not have locality feature, there is diffraction limit, this has just limited the integrated of photonic device.
Surface plasma (Surface Plasmon, SP) is the electromagnetic wave of a kind of metal-dielectric material interface, and it is propagated along metal interface, and decay rapidly in the vertical direction has very strong locality.In in the past 15 years, people have carried out extensive and deep research around the SP characteristic of metal material.Document Plasmonics beyond the diffraction limit[Nature Photonics, 4,83 (2010)], Quant μ m plasmonics[Nature Physics, 9,329 (2013)], Plasmonics:vist the past to know the future[J.Phys.D:Appl.Phys.45, the nearest progress of this class material of report such as 433001 (2012)], proposition is usingd surface plasma as information carrier, is expected to solve the High Density Integration problem of photonic device.Researchist is by regulating the parameters such as size, shape, dielectric environment of metal micro-nanostructure to control SP resonant frequency and quality factor.Meanwhile, take metal material SP excellent specific property as basis, design and prepared all kinds of SP optical device, mainly comprise SP waveguide, sensor, modulator, detector and surface plasma resonance antenna etc.
Yet current most SP optical researches concentrate on take each metalloid material that noble metal Au, Ag be representative.Document Searching for better plasmonic materials[Laser Photonics Rev.4,795 (2010)] result of study shows, take this class material at visible light wave range, to have the advantage that quality factor is high, loss is low as basic SP device.But the intrinsic dielectric property of precious metal material has determined that the tunable range of its SP resonant frequency is difficult to expand to infrared band.What is more important, precious metal material preparation method and standard integrated circuit technology (CMOS) can not be compatible.
Silicon materials are main materials of microelectronic integrated circuit technique, utilize silicon as stock, adopt ripe CMOS to make SP device and integrated circuit, on cost He in technique, there is incomparable advantage, and be more conducive to existing silica-based electronics, that photonic device is realized monolithic is integrated.
Metal silicide, if TiSi, NiSi etc. is the important materials in silicon CMOS technique, is used as electrical interconnection, Ohmic contact, Schottky contacts etc. in the microelectronic component of being everlasting.Restriction due to carrier concentration, the SP resonant frequency of metal silicide is usually located at short infrared wave band, be convenient to make it the communication band transparent with silicon materials by tuning means and overlap, therefore, metal silicide materials has inborn advantage at silica-based SP optics integration field.In fact, from device angles, the advantage of metal silicide SP device and silica-based processing compatibility has caused people's concern.2008, the research of the Air Force Research Laboratory [Optics Express, 16,6507 (2008)] proposed first metal silicide applies in realizing SP-electronics monolithic integrated optical circuit, they have designed banded metal silicide SP waveguiding structure on silicon substrate, have calculated mode transfer loss and the mould field distribution of structure.Result shows, Pd
2si/Si SP waveguide is excellent performance within the scope of 0.5 μ m-7.5 mum wavelength, and transmission range can reach 1-2300 μ m accordingly.2008, research [the Opt.Letts.33 of Mexico State University, 258 (2008)] designed silicide/Si SP flat waveguide, calculating this waveguide is 2.18dB/cm in the loss of 100 mum wavelength patterns, pattern height is less than 30 μ m, has embodied the excellent properties of silicide SP waveguide at region of ultra-red.
From silicon-based devices integrated angle, metal silicide SP waveguiding structure is as the core devices of communication, how at near-infrared band, to realize and mating with traditional silicon waveguide mode, and realize the transmission of low-loss, long distance, to future, the application of silica-based full optical integrated device is vital.The present invention proposes the one-dimensional nano line waveguiding structure of a kind of silicon and metal silicide coupling, compare with the plane Coupled Passive Waveguide Structure of forefathers' research, have advantages of that efficiency tuning space is large, and from structure, in micron field of photoelectric devices, there is more wide application prospect.
Summary of the invention
For deficiency of the prior art, the invention provides a kind of silica-based one dimension dielectric-surface plasma coupled waveguide device, this device can be realized and mating with traditional silicon waveguide mode at near-infrared band, realizes the transmission of low-loss, long distance, and efficiency tuning space is large.
The present invention is achieved through the following technical solutions:
Silica-based one dimension dielectric-surface plasma coupled waveguide device, it is characterized in that, described device has 1-dimention nano line structure, and described device at least comprises two sections of nano columnar materials, in described nanometer columnar material, at least there is one section of silicon materials and at least one section of metal silicide materials, and the nanometer columnar material of different materials attribute alternately connects.
Owing to having adopted 1-dimention nano line structure, i.e. one-dimensional wave guide structure, the optical waveguide mode of transmitting in silicon medium and surface plasma pattern can be by vector field efficient couplings suddenly.When the surface plasma resonance of the optical wavelength of transmitting and one-dimensional metal silicide nano wire is Wavelength matched, will there is strong resonance coupling in Medium Wave Guide, thus in one-dimensional metal silicide waveguiding structure excitating surface plasma wave carry out Energy Transfer.
As preferably, the length of described nanometer columnar material is 80 nanometer～120 nanometers; The diameter of described nanometer columnar material is between 20 nanometer to 60 nanometers.
The surface plasma resonance wavelength of one-dimensional metal silicide structural can recently be regulated by the major diameter of 1-dimention nano line structure, as shown in Figure 3, and the one dimension CoSi that radius is 20nm
2the surface plasma resonance wavelength of nano wire is along with the increase of length is from 0.86 μ m red shift to 1.02 μ m.Visible, by changing the size of metal silicide one-dimentional structure, can regulate and control easily operation wavelength and the coupling efficiency that silica-based dielectric-surface plasma wave is led.
As preferably, described metal silicide is CoSi
2.
As preferably, the service band of described device is the wave band of wavelength between 0.8 μ m～1.7 μ m.
Further, as a kind of preferred device, described device is that 40 nanometer length are that cylindric silicon materials and the diameter of 80 nanometers is that 40 nanometer length are the cylindric CoSi of 80 nanometers by diameter
2be formed by connecting.
Further, as the preferred device of another kind, described device is that 40 nanometer length are that cylindric silicon materials and the diameter of 120 nanometers is that 40 nanometer length are the cylindric CoSi of 120 nanometers by diameter
2be formed by connecting.
Further, as the preferred device of another kind, described device is that 40 nanometer length are that cylindric silicon materials, the diameter of 80 nanometers is that 40 nanometer length are the cylindric CoSi of 80 nanometers by diameter
2, diameter is that 40 nanometer length are that the cylindric silicon materials of 80 nanometers are connected in sequence.
The major diameter of the one-dimensional metal silicide that meanwhile, the Mode Coupling efficiency of the optical waveguide mode of device of the present invention and surface plasma can be by the described 1-dimention nano line structure when material of metal silicide regulates.
Compared with prior art, the present invention has following beneficial effect:
The device of this invention can be realized and mating with traditional silicon waveguide mode at near-infrared band, realizes the transmission of low-loss, long distance, and efficiency tuning space is large, can regulate by the length-diameter ratio of 1-dimention nano line structure and the material of metal silicide.
Accompanying drawing explanation
Fig. 1 is silicon-metal silicide one dimension Coupled Passive Waveguide Structure schematic diagram in the present invention.
Fig. 2 is silicon-metal silicide-silicon one dimension Coupled Passive Waveguide Structure schematic diagram in the present invention.
Fig. 3 is metal silicide CoSi in the present invention
2surface plasma body resonant vibration peak with the variation of one-dimensional nano line length-diameter ratio.
Fig. 4 diameter is that 40 nanometer length are respectively the silicon-metal silicide CoSi of 80nm
2the coupled transfer electromagnetic field distribution plan of one-dimensional nano line waveguiding structure.
Fig. 5 diameter is that 40 nanometer length are respectively the silicon-metal silicide CoSi of 120nm
2the coupled transfer electromagnetic field distribution plan of one-dimensional nano line waveguiding structure.
Fig. 6 is that diameter is that 40 nanometer length are respectively One Dimension Silicon-metal silicide CoSi of 80nm
2the coupled transfer electromagnetic field distribution plan of-silicon nanowires waveguiding structure.
Embodiment
Below in conjunction with accompanying drawing and embodiment, the present invention is described further.
Fig. 1 and Fig. 2 are structure of the present invention, comprise the 1-dimention nano line structure that silicon and metal silicide form.Wherein, structure in Fig. 1, excites the surface plasmon polaritons in metal silicide by the optical waveguide mode coupling in the silicon 1-dimention nano waveguide of left end, realizes unidirectional couplings.Structure in Fig. 2, the surface plasma pattern of transmitting in middle one-dimensional metal silicide can also continue to be coupled with optical waveguide mode to the right.Owing to having adopted one-dimensional wave guide structure, the optical waveguide mode of transmitting in silicon medium and surface plasma pattern can be passed through suddenly vector field efficient coupling.When the surface plasma resonance of the optical wavelength of transmitting and one-dimensional metal silicide nano wire is Wavelength matched, will there is strong resonance coupling in Medium Wave Guide, thus in one-dimensional metal silicide waveguiding structure excitating surface plasma wave carry out Energy Transfer.
As shown in Figure 3, radius is the one dimension CoSi of 20 nm
2the surface plasma resonance wavelength of nano wire is along with the increase of length is from 0.86 μ m red shift to 1.0 μ m.Visible, by changing the size of metal silicide one-dimentional structure, can regulate and control easily operation wavelength and the coupling efficiency that silica-based dielectric-surface plasma wave is led.
Embodiment 1
See Fig. 4, diameter is that 40 nanometer length are respectively the silicon-metal silicide CoSi of 80nm
2the coupled transfer electromagnetic field distribution plan of 1-dimention nano line structure.Can find out, incident light source is from left side silicon one-dimentional structure end incident, and metal silicide one-dimentional structure end may detect the electromagnetic energy transmitting on the right.(a), (b) and incident wavelength (c) are respectively 0.8 μ m, 0.97 μ m and 1.23 μ m.Contrast can find, when incident wavelength is 0.97 μ m, the electromagnetic field that right-hand member detects is the strongest, and now, the coupled transfer efficiency of waveguiding structure is higher than 0.8 μ m and 1.23 μ m.
Embodiment 2
See Fig. 5, diameter is that 40 nanometer length are respectively the silicon-metal silicide CoSi of 120nm
2the coupled transfer electromagnetic field distribution plan of 1-dimention nano line structure.Can find out, incident light source is from left side silicon one-dimentional structure end incident, and silicide one-dimentional structure end may detect the electromagnetic energy transmitting on the right.(a), (b) and incident wavelength (c) are respectively 0.97 μ m, 1.23 μ m and 1.7 μ m.Contrast can find, when incident wavelength is 1.23 μ m, the electromagnetic field that right-hand member detects is the strongest, and now, the coupled transfer efficiency of waveguiding structure is higher than 0.97 μ m and 1.7 μ m.
Embodiment 3
See Fig. 6, diameter is that 40 nanometer length are respectively One Dimension Silicon-metal silicide CoSi of 80nm
2the coupled transfer electromagnetic field distribution plan of-silicon nanowire structure.(a), (b) and incident wavelength (c) are respectively 0.97 μ m, 1.23 μ m and 1.7 μ m.Can find out, incident light source is from left side silicon one-dimentional structure end incident, and after surface plasma-wave coupling in intermetallic metal silicide, silicon one-dimentional structure end may detect the electromagnetic energy transmitting on the right.When incident wavelength is 1.23 μ m, the electromagnetic field that right-hand member detects is the strongest, and now, the coupled transfer efficiency of waveguiding structure is higher than 0.97 μ m and 1.7 μ m.
Claims (9)
1. silica-based one dimension dielectric-surface plasma coupled waveguide device, it is characterized in that, described device has 1-dimention nano line structure, and described device at least comprises two sections of nanometer columnar materials, in described nanometer columnar material, at least there is one section of silicon materials and at least one section of metal silicide materials, and the nanometer columnar material of different materials attribute alternately connects.
2. silica-based one dimension dielectric-surface plasma coupled waveguide device according to claim 1, is characterized in that, the length of described nanometer columnar material is 80 nanometer ~ 120 nanometers.
3. silica-based one dimension dielectric-surface plasma coupled waveguide device according to claim 1, is characterized in that, the diameter of described nanometer columnar material is between 20 nanometer to 60 nanometers.
4. according to the silica-based one dimension dielectric-surface plasma coupled waveguide device described in claims 1 to 3 any one, it is characterized in that, described metal silicide is CoSi
2.
5. silica-based one dimension dielectric-surface plasma coupled waveguide device according to claim 4, is characterized in that, the service band of described device is the wave band of wavelength between 0.8 micron ~ 1.7 microns.
6. silica-based one dimension dielectric-surface plasma coupled waveguide device according to claim 4, is characterized in that, described device is that 40 nanometer length are that cylindric silicon materials and the diameter of 80 nanometers is that 40 nanometer length are the cylindric CoSi of 80 nanometers by diameter
2be formed by connecting.
7. silica-based one dimension dielectric-surface plasma coupled waveguide device according to claim 4, is characterized in that, described device is that 40 nanometer length are that cylindric silicon materials and the diameter of 120 nanometers is that 40 nanometer length are the cylindric CoSi of 120 nanometers by diameter
2be formed by connecting.
8. silica-based one dimension dielectric-surface plasma coupled waveguide device according to claim 4, is characterized in that, described device is that 40 nanometer length are that cylindric silicon materials, the diameter of 80 nanometers is that 40 nanometer length are the cylindric CoSi of 80 nanometers by diameter
2, diameter is that 40 nanometer length are that the cylindric silicon materials of 80 nanometers are connected in sequence.
9. silica-based one dimension dielectric-surface plasma coupled waveguide device according to claim 5, it is characterized in that, the major diameter of the one-dimensional metal silicide that the Mode Coupling efficiency of the optical waveguide mode of described device and surface plasma can be by the described 1-dimention nano line structure when material of metal silicide regulates.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104535532A (en) * | 2014-12-24 | 2015-04-22 | 宁波工程学院 | Metal micro-/nano-sensing device |
Citations (4)
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| CN101009214A (en) * | 2001-03-30 | 2007-08-01 | 加利福尼亚大学董事会 | Methods of fabricating nanostructures and nanowires and devices fabricated therefrom |
| US20080266556A1 (en) * | 2007-04-25 | 2008-10-30 | Kamins Theodore I | Nanowire configured to couple electromagnetic radiation to selected guided wave, devices using same, and methods of fabricating same |
| US8213751B1 (en) * | 2008-11-26 | 2012-07-03 | Optonet Inc. | Electronic-integration compatible photonic integrated circuit and method for fabricating electronic-integration compatible photonic integrated circuit |
| US20130301983A1 (en) * | 2012-05-08 | 2013-11-14 | Pinaki Mazumder | Dynamic Terahertz Switching Device Comprising Sub-wavelength Corrugated Waveguides and Cavity that Utilizes Resonance and Absorption for Attaining On and Off states |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101009214A (en) * | 2001-03-30 | 2007-08-01 | 加利福尼亚大学董事会 | Methods of fabricating nanostructures and nanowires and devices fabricated therefrom |
| US20080266556A1 (en) * | 2007-04-25 | 2008-10-30 | Kamins Theodore I | Nanowire configured to couple electromagnetic radiation to selected guided wave, devices using same, and methods of fabricating same |
| US8213751B1 (en) * | 2008-11-26 | 2012-07-03 | Optonet Inc. | Electronic-integration compatible photonic integrated circuit and method for fabricating electronic-integration compatible photonic integrated circuit |
| US20130301983A1 (en) * | 2012-05-08 | 2013-11-14 | Pinaki Mazumder | Dynamic Terahertz Switching Device Comprising Sub-wavelength Corrugated Waveguides and Cavity that Utilizes Resonance and Absorption for Attaining On and Off states |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104535532A (en) * | 2014-12-24 | 2015-04-22 | 宁波工程学院 | Metal micro-/nano-sensing device |
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