CN104062060A - Double-range silicon piezoresistive type pressure sensitive element - Google Patents
Double-range silicon piezoresistive type pressure sensitive element Download PDFInfo
- Publication number
- CN104062060A CN104062060A CN201410330774.0A CN201410330774A CN104062060A CN 104062060 A CN104062060 A CN 104062060A CN 201410330774 A CN201410330774 A CN 201410330774A CN 104062060 A CN104062060 A CN 104062060A
- Authority
- CN
- China
- Prior art keywords
- silicon
- double
- strain detecting
- base plate
- detecting resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
The invention provides a double-range silicon piezoresistive type pressure sensitive element. The double-range silicon piezoresistive type pressure sensitive element comprises a base plate, a silicon substrate and at least two strain detection resistors. The middle of the base plate is provided with a through hole, the middle of the lower portion of the silicon substrate is hollowed out, a silicon film is formed in the top of the silicon substrate, a hollow upholder is formed below the middle of the silicon film, the hollow upholder divides the silicon film into an inner-side area and an outer-side area, the transverse size of the bottom of the hollow upholder is larger than the transverse size of the through hole in the middle of the base plate, the periphery of the silicon substrate is fixed to the base plate, the strain detection resistors are formed on the upper surface of the silicon substrate, at least one strain detection resistor is formed on the edge on the outer side of the silicon film, at least one strain detection resistor is formed on the edge on the inner side of the hollow upholder, and the strain detection resistors are electrically connected to a peripheral measurement circuit. The double-range silicon piezoresistive type pressure sensitive element can be applicable to large-pressure measurement or small-pressure measurement, and is wide in application range.
Description
Technical field
The present invention relates to electron trade pressure sensor technique field, relate in particular to a kind of double-range silicon piezoresistance type pressure-sensing device.
Background technology
Pressure survey is the key component of a lot of commercial and industrial systems, and pressure transducer is widely applied in many occasions.Directly with strain detecting resistance material, pressure is converted to a kind of method that voltage is pressure sensor; Another kind of more conventional indirect method is that pressure is applied on diaphragm, carrys out gaging pressure size by the deformation of diaphragm.Can realizing by the displacement of measuring diaphragm, bending strain and resonance frequency of perception diaphragm deformation, these three kinds of methods are corresponding the sensitive element of condenser type, strain detecting resistance-type and resonance type pressure sensor respectively.
The sensitive element of strain detecting resistive pressure sensor has utilized strain detecting electricresistance effect, and after solid is subject to acting force, conductivity can change, and the conductivity variations of semiconductor material is much larger than the conductivity variations of metal material.In MEMS device, the general silicon that uses, as semiconductor material, by making silicon strain detecting resistor stripe at silicon diaphragm edge and connecting into Wheatstone bridge, is converted to the variation of pressure the variation of voltage.
For the signal converting sensitivity that makes sensitive element reaches comparatively desirable value, ensure stability and the linearity of device simultaneously, universal experience thinks in measurement range, the silicon diaphragm edge maximum strain of permission should be 5 × 10
-4.According to the Elasticity characteristic of diaphragm, in order to measure little pressure, need to make that silicon diaphragm area is large or thickness is little, now under large pressure condition, silicon diaphragm side strain is excessive and cause non-linear, and mechanical damage may appear in diaphragm, make sensor cannot measure large pressure; In order to measure large pressure, need to make that silicon diaphragm area is little or thickness is large, if now measure little pressure, the sensitivity deficiency of sensitive element signal conversion, while making the little pressure of sensor measurement, precision is not high.
Summary of the invention
(1) technical matters that will solve
In view of above-mentioned technical matters, the invention provides a kind of double-range silicon piezoresistance type pressure-sensing device that can simultaneously measure large pressure and little pressure.
(2) technical scheme
Double-range silicon piezoresistance type pressure-sensing device of the present invention comprises: base plate 8, forms through hole in the middle; Silicon-based substrate 7, its middle part, below hollows out, form silicon fiml 1 at its top, the below at silicon fiml 1 middle part forms hollow support thing 2, silicon fiml is divided into two parts by this hollow support thing 2: medial region and exterior lateral area, the lateral dimension of these hollow support thing 2 bottoms is greater than the lateral dimension of described base plate 8 middle through-holes, and the periphery of this silicon-based substrate 7 is fixed on described base plate 8; And at least two strain detecting resistance 5, be formed at the upper surface of described silicon-based substrate 7, at least one of them is formed at the outer ledge of described silicon fiml 1, and at least one of them is formed at the inside edge of described hollow support thing 2, and this at least two strain detecting resistance is electrically connected to peripheral metering circuit; Wherein, under little pressure condition, described hollow support thing 2 is unsettled, by the strain detecting resistance detection pressure of silicon fiml 1 outer ledge; Under large pressure condition, described hollow support thing 2 is pressed on base plate 8, is supported, by the strain detecting resistance detection pressure of hollow support thing inside edge by base plate 8.
(3) beneficial effect
Can find out from technique scheme, double-range silicon piezoresistance type pressure-sensing device of the present invention has following beneficial effect:
(1) in the present invention, while measuring little pressure, stilt does not contact base plate, pressurized influence of crust deformation to silicon fiml is very little, silicon fiml and stilt entirety Elasticity characteristic is under pressure similar to complete large area diaphragm, makes the pressure-sensing device can the little pressure of perception and have higher signal converting sensitivity;
(2) in the present invention, while measuring large pressure, stilt is blocked by base plate, and silicon fiml interior zone is equivalent to a small size diaphragm, makes this pressure-sensing device be applicable to large pressure survey;
(3) in the present invention, when large pressure condition makes stilt contact base plate, stilt provides the extra support to silicon fiml, has reduced the stress at diaphragm edge fixed support place, and diaphragm is not prone to mechanical damage.
Brief description of the drawings
Fig. 1 is according to the longitudinal sectional view of first embodiment of the invention double-range silicon piezoresistance type pressure-sensing device;
Fig. 2 is the vertical view of the pressure-sensing device of double-range silicon piezoresistance type shown in Fig. 1;
Fig. 3 is according to the longitudinal sectional view of second embodiment of the invention double-range silicon piezoresistance type pressure-sensing device;
Fig. 4 is the top view of the pressure-sensing device of double-range silicon piezoresistance type shown in Fig. 3;
Fig. 5 is principle of elasticity simulation result schematic diagram of the present invention.
[main element]
1-silicon fiml; 2-stilt;
3-light dope high resistant region; 4-heavy doping low-resistance region;
5-strain detecting resistance; 6-metal level;
7-substrate; 8-base plate;
9-bottom hole; 10-extraction electrode;
11-wire; 12-oxide layer.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.It should be noted that, in accompanying drawing or instructions description, similar or identical part is all used identical figure number.The implementation that does not illustrate in accompanying drawing or describe is form known to a person of ordinary skill in the art in affiliated technical field.In addition, although the demonstration of the parameter that comprises particular value can be provided herein, should be appreciated that, parameter is without definitely equaling corresponding value, but can in acceptable error margin or design constraint, be similar to corresponding value.The direction term of mentioning in embodiment, for example " on ", D score, 'fornt', 'back', " left side ", " right side " etc., be only the direction with reference to accompanying drawing.Therefore, the direction term of use is to be not used for limiting the scope of the invention for explanation.
Double-range silicon piezoresistance type pressure-sensing device of the present invention is made based on microelectromechanical systems (MEMS): under little pressure condition, above support does not contact described base plate, and described silicon fiml entirety is considered as large area diaphragm, is suitable for measuring little pressure; Under large pressure condition, stilt contacts described base plate, improves Mechanical Reliability for silicon fiml provides extra support, and described silicon fiml interior zone is considered as small size diaphragm simultaneously, is suitable for measuring large pressure.
One, the first embodiment
In one exemplary embodiment of the present invention, provide a kind of double-range silicon piezoresistance type pressure-sensing device.Fig. 1 is according to the longitudinal sectional view of first embodiment of the invention double-range silicon piezoresistance type pressure-sensing device.As shown in Figure 1, the present embodiment double-range silicon piezoresistance type pressure-sensing device comprises:
Base plate 8, forms square through hole 9 in the middle;
Silicon substrate 7, its middle part, below hollows out, form silicon fiml 1 at its top, and form columnar stilt 2 below silicon fiml middle part, silicon fiml is divided into medial region and exterior lateral area by the base portion of above support, and the diameter of the bottom of this stilt 2 is greater than the diameter of square through hole upper surface on described base plate 8, and its longitudinal axis is perpendicular to silicon fiml 1 surface, this peripheral bottom of silicon substrate 7 is fixed on base plate 8, and the cavity of silicon fiml 1 below is in communication with the outside by the square through hole at base plate 8 middle parts;
At least two strain detecting resistance 5, are formed at the upper surface of silicon substrate, and one of them is formed at the outer ledge of silicon fiml 1, and wherein another is formed at the inside edge of stilt 2, and this at least two strain detecting resistance is connected to peripheral metering circuit by wire 11;
Wherein, when above silicon fiml 1, pressure is less than preset pressure, stilt 2 is unsettled, by the strain detecting resistance detection pressure of silicon fiml 1 outer ledge; In the time that the pressure of silicon fiml 1 top is greater than preset pressure, stilt 2 is pressed on base plate 8, is supported, by the strain detecting resistance detection pressure of stilt 2 inside edges by base plate 8.
Below each ingredient of the present embodiment double-range silicon piezoresistance type pressure-sensing device is elaborated.
In the present embodiment, base plate 8 is the thick monocrystalline silicon substrates of 300 μ m, in the middle of it, etches square through hole 9, and square through hole 9 is at the length of side 0.5mm in base plate front.It should be noted that, the xsect of this direction through hole 8 is square, is foursquare terrace with edge shape but its global shape can be regarded as xsect.
Substrate 7 is for having the silicon substrate of N-shaped surface area, thickness 300 μ m; It is fixed on base plate 8.This silicon substrate 7 hollows out via MEMS technique, forms silicon fiml 1 and stilt 2.Silicon fiml 1 is rounded, and its diameter is 1.5mm, and thickness is 5 μ m.
Stilt 2 is cylindrical, and this columnar longitudinal axis is perpendicular to silicon fiml surface.Stilt 2 is divided into inner side and exterior lateral area with the junction of silicon fiml 1 by silicon fiml 1.The internal diameter 0.5mm of this cylindrical shape stilt 2, wall thickness 50 μ m, height 265 μ m, the masterpiece used time with no pressure is apart from base plate 30 μ m.
The profile of silicon fiml 1 and stilt 2 all adopts circle, because can ensure that like this tangential stress is even, can not make because of the existence of above support 2 stress concentrate.
Bottom hole 9 front openings are less than above support 2 backside openings, to guarantee that above support 2 can be stopped by described base plate 8 under large pressure condition; Meanwhile, the position of bottom hole 9 is in the center of base plate 8, and to guarantee that under large pressure condition, above support 2 contacts after base plate 8, pressure can be delivered to the interior zone of silicon fiml 1 in the clear.
Fig. 2 is the vertical view of the pressure-sensing device of double-range silicon piezoresistance type shown in Fig. 1.As shown in Figure 2, at the outer ledge of silicon fiml 1, four external strain are evenly set and detect resistance.In the inner side of stilt 2, above-mentioned four external strain detect the inner side of resistance, four internal strains are equally evenly set and detect resistance.
The mode that four external strain detect mono-group of resistance N and mono-group of E, W and S connects into two arms of Wheatstone bridge, can make the output of electric bridge maximize.The mode that four internal strains detect mono-group of resistance N and mono-group of E, W and S connects into two arms of Wheatstone bridge, can make the output of electric bridge maximize.
The p-type light dope high resistant region 3 of strain detecting resistance 5 for forming by Implantation on silicon fiml 1.Wire 11 is the p-type heavy doping low-resistance regions 4 that form by Implantation, connects strain detecting resistance 5 and forms Wheatstone bridge and be connected to described extraction electrode 10; Described extraction electrode 10 is the metal levels 6 that overlay on substrate 7 fronts, is deposited on heavy doping low-resistance region 4;
Wire 11 is to be made up of heavy doping low-resistance region 4, also has strain detecting electricresistance effect when deformation.In order to reduce the impact of described silicon fiml 1 resistance on wire 11 when the deformation as far as possible, wire 11 is positioned at the part of described silicon fiml 1 as far as possible along silicon wafer silicon wafer < 100 > direction family cablings.
Strain detecting resistance 5 all forms along silicon wafer [110] direction.Shown in Fig. 2 and Fig. 4, in the described strain detecting resistance 5 perception radial strains in E and W orientation, in the described strain detecting resistance 5 perception tangential strains in N and S orientation, and radially resistor stripe is contrary with the change in resistance of tangential resistor stripe.So the described pressure drag 5 in the inside and outside region of described silicon fiml 1 is connected into respectively to two arms of Wheatstone bridge according to the mode of mono-group of N and mono-group of E, W and S, can make the output of electric bridge maximize.
It should be noted that, " heavy doping " in heavy doping low-resistance region in " light dope " and wire 11 in above-mentioned strain detecting resistance 5 in the p-type light dope high resistance area scope of all specifically not adulterating in this area, those skilled in the art should know its concrete value very much, are not described in detail herein.
So far, the present embodiment double-range silicon piezoresistance type pressure-sensing device is introduced complete.
Two, the second embodiment
In another exemplary embodiment of the present invention, also provide a kind of double-range silicon piezoresistance type pressure-sensing device.Fig. 3 is according to the longitudinal sectional view of second embodiment of the invention double-range silicon piezoresistance type pressure-sensing device.
Below be only elaborated for the difference part of the present embodiment and the first embodiment.
Described base plate 8 is silicon dioxide substrates that 500 μ m are thick, is fixed on the back side of described substrate 7, and centre has manhole 9, radius 0.5mm.Equally, the xsect of this manhole is circular, but can to regard xsect as be circular cylindrical shape to its global shape.
Substrate 7 is soi wafer, its monocrystalline silicon segment thickness 300 μ m, and oxide layer 12 thickness 2 μ m, it is the p-type light dope high resistant region 3 of 5 μ m that there is thickness in front.The below, middle part of this soi wafer hollows out via MEMS technique, forms silicon fiml and stilt.Silicon fiml 1 is rounded equally, and its diameter is 1.6mm, and thickness is 8 μ m.
Stilt 2 crater shape ringwise, the longitudinal axis of this stilt is equally perpendicular to silicon fiml surface.Stilt 2 is divided into inner side and exterior lateral area with the junction of silicon fiml 1 by silicon fiml 1.The internal diameter 0.6mm of this shape crater shape stilt 2, wall thickness 80 μ m, height 270 μ m, the masterpiece used time with no pressure is apart from base plate 20 μ m.
Equally, the profile of silicon fiml 1 and stilt 2 all adopts circle, because can ensure that like this tangential stress is even, can not make because of the existence of stilt 2 stress concentrate.
Bottom hole 9 radiuses are less than stilt 2 backside openings radiuses, can be stopped by base plate 8 guaranteeing at large pressure condition lower support thing 2; Meanwhile, its position is in the center of base plate 8, and to guarantee that large pressure condition lower support thing 2 contacts after base plate 8, pressure can be delivered to the interior zone of silicon fiml 1 in the clear.
Fig. 4 is the top view of the pressure-sensing device of double-range silicon piezoresistance type shown in Fig. 3.As shown in Figure 4, at the outer ledge of silicon fiml 1, four external strain are evenly set and detect resistance.In the inner side of stilt 2, above-mentioned four external strain detect the inner side of resistance, four internal strains are equally evenly set and detect resistance.
The silicon strain detecting resistor stripe of strain detecting resistance 5 for forming by photoetching on described silicon fiml 1; Wire 11 parts are tinsels, and another part is the metal level 6 that is deposited on described substrate 7 fronts, connect respectively the strain detecting resistance 5 that is distributed in silicon fiml 1 interior zone edge and edge, perimeter and form Wheatstone bridge and be connected to described extraction electrode 10.Extraction electrode 10 is the metal levels 6 that overlay on described substrate 7 fronts.
Wire 11 is to be made up of tinsel and metal level 6.The strain detecting resistance 5 that uses metal level 6 to connect silicon fiml 1 edge, perimeter on substrate 7 forms Wheatstone bridge and is connected to extraction electrode 10.The position being connected with silicon fiml 1 at stilt 2, when pressurized strain very little, the strain detecting resistance 5 that connects silicon fiml 1 interior zone edge in its positive deposited metal 6 forms Wheatstone bridge.If being deposited on the pressurized deformation position of silicon fiml 1, metal level 6 can affect stress distribution, therefore the Wheatstone bridge that use tinsel forms the strain detecting resistance 5 at silicon fiml 1 interior zone edge is electrically connected to extraction electrode 10.
Strain detecting resistance 5 all forms along silicon wafer [110] direction.Shown in Fig. 2 and Fig. 4, in the described strain detecting resistance 5 perception radial strains in E and W orientation, in the described strain detecting resistance 5 perception tangential strains in N and S orientation, and radially resistor stripe is contrary with the change in resistance of tangential resistor stripe.So the described strain detecting resistance 5 in the inside and outside region of described silicon fiml 1 is connected into respectively to two arms of Wheatstone bridge according to the mode of mono-group of N and mono-group of E, W and S, can make the output of electric bridge maximize.
So far, the present embodiment double-range silicon piezoresistance type pressure-sensing device is introduced complete.
In order to verify the feasibility of technical scheme provided by the invention, in ANSYS, carry out emulation.Realistic model is the diameter 1.5mm of periphery fixed, the silicon fiml of thickness 5 μ m, stilt radius 0.5mm, and during without pressure, the stilt back side is apart from base plate 45 μ m.Comparison model is the diameter 1.5mm of periphery fixed, the silicon fiml of thickness 5 μ m, there is no stilt.Apply different pressure loads, the result obtaining as shown in Figure 5.In the time of pressure p=1.2kPa, stilt 2 is about to touch described base plate 8, and silicon fiml 1 side strain approaches 5 × 10
-4, the Strain Distribution of silicon fiml 1 outer edge zone and comparison model are approximate, illustrate that model can realize the high-acruracy survey of 1.2kPa range; In the time of pressure p=10kPa, stilt touches base plate 8, and silicon fiml 1 interior zone side strain approaches 5 × 10
-4, silicon fiml 1 perimeter side strain is significantly less than the side strain of comparison model, illustrate that model can realize the pressure survey of 10kPa range, and Mechanical Reliability is higher.
So far, by reference to the accompanying drawings the present embodiment be have been described in detail.Describe according to above, those skilled in the art should have clearly understanding to double-range silicon piezoresistance type pressure-sensing device of the present invention.
In addition, the above-mentioned definition to each element and method is not limited in various concrete structures, shape or the mode in embodiment, mentioned, and those of ordinary skill in the art can change simply or replace it, for example:
(1) thickness of silicon fiml is less than 300 μ m; The thickness sum of the distance between stilt and base plate and silicon fiml is less than the thickness of silicon-based substrate 7, and the wall thickness of hollow support thing (2) is between 20 μ m～200 μ m;
(2) through hole on base plate, except square through hole and manhole, it can also be the through hole of other shapes, as long as the cavity of silicon fiml below is in communication with the outside, and, its lateral dimension is less than the lateral dimension interface of silicon fiml supported underneath thing, and the present invention does not limit the shape of through hole;
(3) stilt of silicon fiml below, except cylindrical shape and annular crater shape, it can also be other forms of middle null interface, for example: square tube shape etc., as long as meet the lateral dimension that the lateral dimension of its hollow bulb is greater than through hole on base plate, being subject to large pressure be, stilt can be supported on base plate, and the present invention does not specifically limit the shape of stilt;
(4), except monocrystalline silicon substrate or silicon dioxide substrate, base plate can also be selected other crystal material substrates.
Need to illustrate, about the thickness of silicon fiml, not concrete restriction in the present invention, because the factor such as area, the Young modulus of the silicon-based substrate that adopts of its pressure bearing with setting and silicon fiml is relevant, those skilled in the art can carry out choose reasonable according to concrete scene.In addition, hollow support thing is same with above-mentioned respectively therefore relevant apart from the size of base plate, is also no longer elaborated herein.
In sum, in range silicon strain detecting resistance-type pressure-sensing device of the present invention, stilt is set below silicon fiml, compares conventional silicon strain detecting resistance-type pressure-sensing device, have advantages of and can measure large pressure and the little pressure of high-acruracy survey simultaneously.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. a double-range silicon piezoresistance type pressure-sensing device, is characterized in that, comprising:
Base plate (8), forms through hole in the middle;
Silicon-based substrate (7), its middle part, below hollows out, form silicon fiml (1) at its top, the below at silicon fiml (1) middle part forms hollow support thing (2), silicon fiml is divided into two parts by this hollow support thing (2): medial region and exterior lateral area, the lateral dimension of this hollow support thing (2) bottom is greater than the lateral dimension of described base plate (8) middle through-hole, and the periphery of this silicon-based substrate (7) is fixed on described base plate (8); And
At least two strain detecting resistance (5), be formed at the upper surface of described silicon-based substrate (7), at least one of them is formed at the outer ledge of described silicon fiml (1), at least one of them is formed at the inside edge of described hollow support thing (2), and this at least two strain detecting resistance is electrically connected to peripheral metering circuit;
Wherein, under little pressure condition, described hollow support thing (2) is unsettled, by the strain detecting resistance detection pressure of silicon fiml (1) outer ledge; Under large pressure condition, it is upper that described hollow support thing (2) is pressed in base plate (8), supported, by the strain detecting resistance detection pressure of hollow support thing inside edge by base plate (8).
2. double-range silicon piezoresistance type pressure-sensing device according to claim 1, is characterized in that, the xsect of described hollow support thing (2) is annular.
3. double-range silicon piezoresistance type pressure-sensing device according to claim 2, is characterized in that, described hollow support thing (2) be shaped as cylindrical shape or annular crater shape.
4. double-range silicon piezoresistance type pressure-sensing device according to claim 1, is characterized in that, the wall thickness of described hollow support thing (2) is between 20 μ m～200 μ m.
5. double-range silicon piezoresistance type pressure-sensing device according to claim 1, is characterized in that, described silicon-based substrate (7) is for having silicon substrate or the SOI substrate of N-shaped surface area.
6. double-range silicon piezoresistance type pressure-sensing device according to claim 5, is characterized in that, described silicon-based substrate (7) is for having the silicon substrate of N-shaped surface area;
The p-type light dope high resistant region (3) of described strain detecting resistance (5) for above forming by Implantation at described silicon fiml (1), the wire that is positioned at this strain detecting resistance (5) of connection of silicon fiml (1) scope is the p-type heavy doping low-resistance region forming by Implantation.
7. double-range silicon piezoresistance type pressure-sensing device according to claim 6, it is characterized in that, described strain detecting resistance forms along silicon wafer [110] direction, is positioned at the wire of this strain detecting resistance (5) of connection of silicon fiml (1) scope along silicon wafer < 100 > direction family cablings.
8. double-range silicon piezoresistance type pressure-sensing device according to claim 5, is characterized in that, described silicon-based substrate (7) is SOI substrate;
The silicon strain detecting resistor stripe of described strain detecting resistance (5) for above forming by photoetching at described silicon fiml (1); A part that connects the wire of this strain detecting resistance (5) is tinsel, and another part is the metal level that is deposited on described SOI substrate front side.
9. according to the double-range silicon piezoresistance type pressure-sensing device described in any one in claim 1 to 8, it is characterized in that, the outer ledge of described silicon fiml (1) is uniformly distributed four strain detecting resistance, these four strain detecting resistance, as four resistance of Wheatstone bridge, are obtained the force value of silicon fiml carrying by its strain signal;
The inside edge of described hollow support thing (2) is uniformly distributed four strain detecting resistance, and these four strain detecting resistance, as four resistance of Wheatstone bridge, are obtained the force value of silicon fiml carrying by its strain signal.
10. according to the double-range silicon piezoresistance type pressure-sensing device described in any one in claim 1 to 8, it is characterized in that, described base plate (8) is monocrystalline silicon substrate or silicon dioxide substrate, described base plate (8) middle through-hole be shaped as cylindricality or platform shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410330774.0A CN104062060A (en) | 2014-07-11 | 2014-07-11 | Double-range silicon piezoresistive type pressure sensitive element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410330774.0A CN104062060A (en) | 2014-07-11 | 2014-07-11 | Double-range silicon piezoresistive type pressure sensitive element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104062060A true CN104062060A (en) | 2014-09-24 |
Family
ID=51549879
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410330774.0A Pending CN104062060A (en) | 2014-07-11 | 2014-07-11 | Double-range silicon piezoresistive type pressure sensitive element |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104062060A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104614099A (en) * | 2015-02-03 | 2015-05-13 | 中国工程物理研究院电子工程研究所 | Micro-pressure sensor of on-film FBAR structure |
| CN106404237A (en) * | 2015-07-29 | 2017-02-15 | 浙江盾安人工环境股份有限公司 | Pressure sensor chip and preparation method, and absolute pressure sensor chip |
| CN107966227A (en) * | 2017-12-07 | 2018-04-27 | 西安近代化学研究所 | A kind of effect target assembly for being suitable for dynamic quick-fried field target shock wave pressure measurement |
| CN108332898A (en) * | 2018-04-17 | 2018-07-27 | 南京信息工程大学 | A kind of compound range baroceptor and high-precision sounding air pressure measuring apparatus |
| CN109115379A (en) * | 2018-10-29 | 2019-01-01 | 黎汉银 | pressure sensor |
| CN109171102A (en) * | 2018-10-29 | 2019-01-11 | 深圳市科迈爱康科技有限公司 | Intelligent shoe and its middle bed die group |
| CN110057478A (en) * | 2019-05-17 | 2019-07-26 | 深圳市航天新材科技有限公司 | A kind of highly sensitive pliable pressure senser element of resistance-type |
| CN112345127A (en) * | 2020-09-30 | 2021-02-09 | 北京自动化控制设备研究所 | Data fusion method for double-core composite silicon piezoresistive pressure sensor |
| CN113401861A (en) * | 2021-05-21 | 2021-09-17 | 成都凯天电子股份有限公司 | Multi-range integrated composite membrane type MEMS pressure sensor |
| CN114235232A (en) * | 2021-12-16 | 2022-03-25 | 东南大学 | MEMS pressure sensor and preparation method thereof |
| CN114295276A (en) * | 2020-10-08 | 2022-04-08 | 阿自倍尔株式会社 | Pressure measuring device |
| CN114314498A (en) * | 2022-03-14 | 2022-04-12 | 南京元感微电子有限公司 | MEMS film vacuum gauge and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4528855A (en) * | 1984-07-02 | 1985-07-16 | Itt Corporation | Integral differential and static pressure transducer |
| JPH04178533A (en) * | 1990-11-14 | 1992-06-25 | Fujikura Ltd | Semiconductor pressure sensor |
| JPH09329516A (en) * | 1996-06-06 | 1997-12-22 | Hitachi Ltd | Semiconductor pressure sensor and composite transmitter using it |
| CN103364118A (en) * | 2012-03-29 | 2013-10-23 | 中国科学院电子学研究所 | Piezoresistive pressure sensor and manufacturing method thereof |
-
2014
- 2014-07-11 CN CN201410330774.0A patent/CN104062060A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4528855A (en) * | 1984-07-02 | 1985-07-16 | Itt Corporation | Integral differential and static pressure transducer |
| JPH04178533A (en) * | 1990-11-14 | 1992-06-25 | Fujikura Ltd | Semiconductor pressure sensor |
| JPH09329516A (en) * | 1996-06-06 | 1997-12-22 | Hitachi Ltd | Semiconductor pressure sensor and composite transmitter using it |
| CN103364118A (en) * | 2012-03-29 | 2013-10-23 | 中国科学院电子学研究所 | Piezoresistive pressure sensor and manufacturing method thereof |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104614099A (en) * | 2015-02-03 | 2015-05-13 | 中国工程物理研究院电子工程研究所 | Micro-pressure sensor of on-film FBAR structure |
| CN106404237A (en) * | 2015-07-29 | 2017-02-15 | 浙江盾安人工环境股份有限公司 | Pressure sensor chip and preparation method, and absolute pressure sensor chip |
| CN107966227A (en) * | 2017-12-07 | 2018-04-27 | 西安近代化学研究所 | A kind of effect target assembly for being suitable for dynamic quick-fried field target shock wave pressure measurement |
| CN108332898A (en) * | 2018-04-17 | 2018-07-27 | 南京信息工程大学 | A kind of compound range baroceptor and high-precision sounding air pressure measuring apparatus |
| CN108332898B (en) * | 2018-04-17 | 2023-05-09 | 南京信息工程大学 | Composite range air pressure sensor and high-precision air pressure detecting and measuring device |
| CN109115379A (en) * | 2018-10-29 | 2019-01-01 | 黎汉银 | pressure sensor |
| CN109171102A (en) * | 2018-10-29 | 2019-01-11 | 深圳市科迈爱康科技有限公司 | Intelligent shoe and its middle bed die group |
| CN110057478B (en) * | 2019-05-17 | 2021-03-16 | 深圳市航天新材科技有限公司 | Resistance type high-sensitivity flexible pressure sensing device |
| CN110057478A (en) * | 2019-05-17 | 2019-07-26 | 深圳市航天新材科技有限公司 | A kind of highly sensitive pliable pressure senser element of resistance-type |
| CN112345127A (en) * | 2020-09-30 | 2021-02-09 | 北京自动化控制设备研究所 | Data fusion method for double-core composite silicon piezoresistive pressure sensor |
| CN114295276A (en) * | 2020-10-08 | 2022-04-08 | 阿自倍尔株式会社 | Pressure measuring device |
| CN113401861A (en) * | 2021-05-21 | 2021-09-17 | 成都凯天电子股份有限公司 | Multi-range integrated composite membrane type MEMS pressure sensor |
| CN113401861B (en) * | 2021-05-21 | 2024-02-23 | 成都凯天电子股份有限公司 | Multi-range integrated composite diaphragm type MEMS pressure sensor |
| CN114235232A (en) * | 2021-12-16 | 2022-03-25 | 东南大学 | MEMS pressure sensor and preparation method thereof |
| CN114314498A (en) * | 2022-03-14 | 2022-04-12 | 南京元感微电子有限公司 | MEMS film vacuum gauge and preparation method thereof |
| CN114314498B (en) * | 2022-03-14 | 2022-06-03 | 南京元感微电子有限公司 | MEMS film vacuum gauge and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104062060A (en) | Double-range silicon piezoresistive type pressure sensitive element | |
| CN102252798B (en) | Pressure sensor | |
| KR102313908B1 (en) | Method of manufacturing a pressure sensor | |
| CN104764547B (en) | A kind of sculptured island membrane stress concentrating structure micro-pressure sensor chip and preparation method | |
| CN104729784B (en) | A kind of beam groove combines step island film micro-pressure sensor chip and preparation method | |
| US9651441B2 (en) | Pressure sensor device with high sensitivity and high accuracy | |
| CN104764558B (en) | Pressure sensor with diaphragm having protrusions | |
| US9764947B2 (en) | Piezoresistive pressure sensor device | |
| CN106404237B (en) | Pressure sensor chip, preparation method thereof and absolute pressure sensor chip | |
| WO2013042680A1 (en) | Tactile sensor and multi-axial tactile sensor | |
| CN101713693A (en) | Pressure sensor | |
| CN110411615B (en) | High-sensitivity MEMS (micro-electromechanical systems) touch sensor structure | |
| CN104748904A (en) | Sectional mass block stressed concentration structural micro-pressure sensor chip and preparation method | |
| CN103994854A (en) | Silicon capacitor vacuum sensor based on micro electro mechanical system (MEMS) technology | |
| US20120006129A1 (en) | Pressure measuring device | |
| CN102252789B (en) | Pressure sensor | |
| JP2019526803A (en) | Diaphragm of pressure sensor with overpressure protection | |
| CN106197816A (en) | A kind of A seating sensor measuring boom support member stress | |
| CN112284607A (en) | Cross island high-temperature-resistant corrosion-resistant pressure sensor chip and preparation method thereof | |
| CN204881934U (en) | Pressure sensing component | |
| JP2020046177A (en) | Pressure sensor element and pressure sensor module provided with it | |
| CN112798169A (en) | High-voltage sensor with high overload resistance | |
| CN210893522U (en) | MEMS pressure sensor | |
| CN203811323U (en) | Silicon capacitance vacuum sensor based on technology of micro-electro-mechanical system | |
| US10871407B2 (en) | Sensor assemblies with multirange construction |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140924 |