CN104058409B - The system of purifying silicon tetrachloride - Google Patents
The system of purifying silicon tetrachloride Download PDFInfo
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- CN104058409B CN104058409B CN201410299632.2A CN201410299632A CN104058409B CN 104058409 B CN104058409 B CN 104058409B CN 201410299632 A CN201410299632 A CN 201410299632A CN 104058409 B CN104058409 B CN 104058409B
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Abstract
The invention discloses a kind of system of purifying silicon tetrachloride, comprising: rectification tower body, in described rectification tower body, limit absorption distillation section, lights removal section and heavies removal section from top to bottom successively; Silicon tetrachloride entrance, described silicon tetrachloride entrance is arranged between described absorption distillation section and described lights removal section; Silicon tetrachloride exports, and described silicon tetrachloride outlet is arranged between described lights removal section and described heavies removal section; Vapour outlet, described vapour outlet is arranged on described absorption distillation section top; And heavy constituent outlet, described heavy constituent outlet is arranged on bottom described heavies removal section.This system can prepare the silicon tetrachloride of optical fiber rank, and can realize large scale continuous prod.
Description
Technical field
The invention belongs to field of polysilicon production, specifically, the present invention relates to a kind of system of purifying silicon tetrachloride.
Background technology
In recent years, along with the development of China's informatization, the demand of market to fiber products constantly increases, aggregate demand breaks through 100,000,000 core kilometers, there is the phenomenon that optical fiber is under-supply in market, and the important technology factor restricting the increase of optical fiber output is exactly that the degree of dependence of China to one of import preform and important source material thereof optical fiber ultrapure silicon tetrachloride (ultralow-hydrogen low content silicon tetrachloride) is too high.So for supporting the development that national information is built, the technology that optical fiber ultrapure silicon tetrachloride is prepared in research and development becomes the task of top priority.
The method preparing optical fiber ultrapure silicon tetrachloride mainly comprises rectification method, absorption process, partial hydrolysis method, complexometry, light chlorination process etc.Wherein rectifying tower and absorption process belong to Physical, only can prepare the silicon tetrachloride of certain purity, have problems when preparing optical fiber ultrapure silicon tetrachloride; Partial hydrolysis method, complexometry and light chlorination process belong to chemical method, the impurity in silicon tetrachloride is removed by reaction, may be used for preparing optical fiber ultrapure silicon tetrachloride, but have operational difficulty and cannot the shortcoming of scale operation because of partial hydrolysis method and complexometry, its application is restricted.
Domesticly at present also be in blank preparing on a large scale in optical fiber ultrapure silicon tetrachloride.Beijing total institute of coloured research discloses a kind of rectifying formula photochlorination apparatus (number of patent application: 200910260296.X), and this device is only applicable to laboratory study, cannot realize continuous seepage and effectively industry amplification.Wuhan New Silicon Technology Co., Ltd. discloses a kind of continuous distillation method of optical fiber high purity silicon tetrachloride, though solve problem that is continuous and scale operation, the purity of silicon tetrachloride cannot reach ultrapure requirement.
Therefore, the technology of existing purifying silicon tetrachloride need further research.
Summary of the invention
The present invention is intended to solve one of technical problem in correlation technique at least to a certain extent.For this reason, one object of the present invention is the system proposing a kind of purifying silicon tetrachloride, and this system can prepare the silicon tetrachloride of optical fiber rank, and can realize large scale continuous prod.
In one aspect of the invention, the present invention proposes a kind of system of purifying silicon tetrachloride, comprising:
Rectification tower body, limits absorption distillation section, lights removal section and heavies removal section from top to bottom in described rectification tower body successively;
Silicon tetrachloride entrance, described silicon tetrachloride entrance is arranged between described absorption distillation section and described lights removal section;
Silicon tetrachloride exports, and described silicon tetrachloride outlet is arranged between described lights removal section and described heavies removal section;
Vapour outlet, described vapour outlet is arranged on described absorption distillation section top; And
Heavy constituent exports, and described heavy constituent outlet is arranged on bottom described heavies removal section.
Pass through to carry out adsorbing and rectifying in single tower according to the system of the purifying silicon tetrachloride of the embodiment of the present invention simultaneously, efficiently solve system operation difficulty and cannot the problem of large scale continuous prod, and significantly improve the operational efficiency of system and run continuity, simultaneously, absorption is combined with rectifying, while absorption, carry out heat and mass, ensure that the purity of silicon tetrachloride product, thus the silicon tetrachloride of optical fiber rank can be prepared.
In addition, the system of purifying silicon tetrachloride according to the above embodiment of the present invention can also have following additional technical characteristic:
In some embodiments of the invention, the system of described purifying silicon tetrachloride comprises further: silicon tetrachloride vaporization device, described silicon tetrachloride vaporization device has liquid silicon entrance, the outlet of non-vaporized heavy components and the outlet of gas silicon tetrachloride, and be suitable for carrying out vaporization process to described liquid silicon, to obtain gas silicon tetrachloride; And silicon tetrachloride superheater, described silicon tetrachloride superheater has gas silicon tetrachloride entrance and the outlet of overheated silicon tetrachloride, and described overheated silicon tetrachloride outlet is connected with described silicon tetrachloride entrance, described gas silicon tetrachloride entrance exports with described gas silicon tetrachloride and is connected, and be suitable for carrying out Overheating Treatment to described gas silicon tetrachloride, to obtain overheated silicon tetrachloride.Thus, the silicon tetrachloride of optical fiber rank can effectively be prepared.
In some embodiments of the invention, the system of described purifying silicon tetrachloride comprises further: the first refrigerating unit, described first refrigerating unit is connected with described vapour outlet, and be suitable for carrying out the first cooling process to steam, to obtain phegma and light constituent, and described phegma is back to described absorption distillation section, wherein, described phegma contains silicon tetrachloride; And second refrigerating unit, described second refrigerating unit is connected with described first refrigerating unit, and is suitable for carrying out the second cooling process to described light constituent.Thus, can light constituent in efficient recovery system.
In some embodiments of the invention, the system of described purifying silicon tetrachloride comprises further: the 3rd refrigerating unit, described 3rd refrigerating unit exports with described silicon tetrachloride and is connected, and be suitable for carrying out the 3rd cooling process to the silicon tetrachloride through rectification process, to obtain the silicon tetrachloride of purifying; And the 4th refrigerating unit, described 4th refrigerating unit and described non-vaporized heavy components export to export with described heavy constituent and are connected, and are suitable for carrying out the 4th cooling process to described heavy constituent.Thus, can heavy constituent in efficient recovery system.
In some embodiments of the invention, the internals of described absorption distillation section are the structured packing with surface recombination sorbent material, and number of theoretical plate is 10 ~ 20 pieces.Thus, absorption distillation efficiency can be significantly improved.
In some embodiments of the invention, the internals of described lights removal section are wire cloth structured packing and plate ripple arranged packing, and number of theoretical plate is 20 ~ 40 pieces.Thus, lights removal efficiency can be significantly improved.
In some embodiments of the invention, the internals of described heavies removal section are wire cloth structured packing and plate ripple arranged packing, and number of theoretical plate is 5 ~ 15 pieces.Thus, heavies removal efficiency can be significantly improved.
Accompanying drawing explanation
Fig. 1 is the system architecture schematic diagram of purifying silicon tetrachloride according to an embodiment of the invention;
Fig. 2 is the system architecture schematic diagram of the purifying silicon tetrachloride according to another embodiment of the present invention.
Embodiment
Be described below in detail embodiments of the invention, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Be exemplary below by the embodiment be described with reference to the drawings, be intended to for explaining the present invention, and can not limitation of the present invention be interpreted as.
In describing the invention, it will be appreciated that, term " " center ", " longitudinal direction ", " transverse direction ", " length ", " width ", " thickness ", " on ", D score, " front ", " afterwards ", " left side ", " right side ", " vertically ", " level ", " top ", " end " " interior ", " outward ", " clockwise ", " counterclockwise ", " axis ", " radial direction ", orientation or the position relationship of the instruction such as " circumference " are based on orientation shown in the drawings or position relationship, only the present invention for convenience of description and simplified characterization, instead of indicate or imply that the device of indication or element must have specific orientation, with specific azimuth configuration and operation, therefore limitation of the present invention can not be interpreted as.
In addition, term " first ", " second " only for describing object, and can not be interpreted as instruction or hint relative importance or imply the quantity indicating indicated technical characteristic.Thus, be limited with " first ", the feature of " second " can express or impliedly comprise at least one this feature.In describing the invention, the implication of " multiple " is at least two, such as two, three etc., unless otherwise expressly limited specifically.
In the present invention, unless otherwise clearly defined and limited, the term such as term " installation ", " being connected ", " connection ", " fixing " should be interpreted broadly, and such as, can be fixedly connected with, also can be removably connect, or integral; Can be mechanical connection, also can be electrical connection; Can be directly be connected, also indirectly can be connected by intermediary, can be the connection of two element internals or the interaction relationship of two elements, unless otherwise clear and definite restriction.For the ordinary skill in the art, above-mentioned term concrete meaning in the present invention can be understood as the case may be.
In the present invention, unless otherwise clearly defined and limited, fisrt feature second feature " on " or D score can be that the first and second features directly contact, or the first and second features are by intermediary indirect contact.And, fisrt feature second feature " on ", " top " and " above " but fisrt feature directly over second feature or oblique upper, or only represent that fisrt feature level height is higher than second feature.Fisrt feature second feature " under ", " below " and " below " can be fisrt feature immediately below second feature or tiltedly below, or only represent that fisrt feature level height is less than second feature.
In one aspect of the invention, the present invention proposes a kind of system of purifying silicon tetrachloride.Below with reference to Fig. 1-2, the system of the purifying silicon tetrachloride of the embodiment of the present invention is described in detail.According to embodiments of the invention, this system comprises:
Rectification tower body 100: according to embodiments of the invention, limits absorption distillation section 11, lights removal section 12 and heavies removal section 13 from top to bottom in rectification tower body 100 successively.According to embodiments of the invention, between absorption distillation section 11 and lights removal section 12, be provided with silicon tetrachloride entrance 14, for being supplied in rectification tower body 100 by silicon tetrachloride.According to embodiments of the invention, be provided with silicon tetrachloride between lights removal section 12 and heavies removal section 13 and export 15, for the silicon tetrachloride through rectification process is discharged rectification tower body 100.According to embodiments of the invention, absorption distillation section 11 top is provided with vapour outlet 16, discharges rectification tower body 100 for the steam that will produce.According to embodiments of the invention, bottom heavies removal section 13, be provided with heavy constituent outlet 17, discharge rectifying body 100 for heavy constituent rectification process obtained.
According to embodiments of the invention, absorption distillation section 11 is carried out the condition of absorption distillation and is not particularly limited, and according to a particular embodiment of the invention, the tower top temperature of absorption distillation section can be 65 ~ 95 degrees Celsius, and pressure can be 0.05 ~ 0.2MPa.Particularly, the internals of absorption distillation section can for having the structured packing of surface recombination sorbent material, and theoretical plate number is 10 ~ 20 pieces.
According to embodiments of the invention, lights removal section 12 is carried out the condition of rectification process and is not particularly limited, and according to a particular embodiment of the invention, the head temperature of lights removal section can be 65 ~ 95 degrees Celsius, and pressure can be 0.05 ~ 0.2MPa.Particularly, the internals of lights removal section can be wire cloth structured packing and plate ripple arranged packing, and number of theoretical plate is 20 ~ 40 pieces.
According to embodiments of the invention, heavies removal section 13 is carried out the condition of rectification process and is not particularly limited, and according to a particular embodiment of the invention, the head temperature of heavies removal section can be 75 ~ 95 degrees Celsius, and pressure can be 0.05 ~ 0.2MPa.Particularly, the internals of heavies removal section 13 can be wire cloth structured packing and plate ripple arranged packing, and number of theoretical plate is 5 ~ 15 pieces.
Pass through to carry out adsorbing and rectifying in single tower according to the system of the purifying silicon tetrachloride of the embodiment of the present invention simultaneously, efficiently solve system operation difficulty and cannot the problem of large scale continuous prod, and significantly improve the operational efficiency of system and run continuity, simultaneously, absorption is combined with rectifying, while absorption, carry out heat and mass, ensure that the purity of silicon tetrachloride product, thus the silicon tetrachloride of optical fiber rank can be prepared.
With reference to figure 2, the system according to the purifying silicon tetrachloride of the embodiment of the present invention comprises further:
Silicon tetrachloride vaporization device 200: according to embodiments of the invention, silicon tetrachloride vaporization device 200 has liquid silicon entrance 21, non-vaporized heavy components outlet 22 and gas silicon tetrachloride outlet 23, and be suitable for carrying out vaporization process to liquid silicon, thus gas silicon tetrachloride can be obtained.According to embodiments of the invention, the condition of vaporizing to liquid silicon in silicon tetrachloride vaporization device is also not particularly limited, according to a particular embodiment of the invention, carry out vaporization to liquid silicon to carry out under temperature is 85 ~ 105 degrees Celsius and pressure is 0.1 ~ 0.25MPa pressure condition.Particularly, liquid silicon is vaporized, owing to containing part heavy constituent in liquid silicon, controlled by temperature thus, wherein entrained part heavy constituent impurity can be made not vaporize, thus gas silicon tetrachloride can be obtained, thus, the purity of silicon tetrachloride can be significantly improved.
Silicon tetrachloride superheater 300: according to embodiments of the invention, silicon tetrachloride superheater 300 has gas silicon tetrachloride entrance 31 and overheated silicon tetrachloride outlet 32, and gas silicon tetrachloride entrance 31 and gas silicon tetrachloride export 23 to be connected, and be suitable for carrying out Overheating Treatment to gas silicon tetrachloride, thus overheated silicon tetrachloride can be obtained, overheated silicon tetrachloride outlet 32 is connected with silicon tetrachloride entrance 14, and is suitable for silicon tetrachloride to be supplied in rectification tower body 100.According to embodiments of the invention, in silicon tetrachloride superheater 300, the condition of Overheating Treatment carried out to gas silicon tetrachloride and be not particularly limited, according to a particular embodiment of the invention, Overheating Treatment can be carried out under temperature is 95 ~ 115 degrees Celsius and pressure is 0.1 ~ 0.25MPa pressure condition.Particularly, contriver finds, carries out Overheating Treatment silicon tetrachloride vapor effectively can be avoided to liquefy in course of conveying and increase transporting resistance gas silicon tetrachloride.
First refrigerating unit 400: according to embodiments of the invention, the first refrigerating unit 400 is connected with vapour outlet 16, and is suitable for carrying out the first cooling process to the vapour mixture produced in rectification tower body, thus can obtain phegma and light constituent.According to embodiments of the invention, containing silicon tetrachloride in phegma, and phegma is returned absorption distillation section and proceed rectification process.According to embodiments of the invention, phegma can be 10 ~ 15 with the mass flow rate of the liquid silicon being supplied to silicon tetrachloride vaporization device.According to embodiments of the invention, the condition of the first cooling process is also not particularly limited, and according to a particular embodiment of the invention, the first cooling process can be carried out under temperature is 55 ~ 85 degrees Celsius and pressure is 0.05 ~ 0.2MPa pressure condition.
Second refrigerating unit 500: according to embodiments of the invention, the second refrigerating unit 500 is connected with the first refrigerating unit 400, and is suitable for carrying out the second cooling process to the light constituent of separating treatment from the first refrigerating unit 400.According to embodiments of the invention, the condition of the second cooling process is also not particularly limited, and according to a particular embodiment of the invention, the second cooling process can be carried out under temperature is 25 ~ 65 degrees Celsius and pressure is 0.05 ~ 0.2MPa pressure condition.According to embodiments of the invention, light constituent can contain trichlorosilane and a small amount of silicon tetrachloride.
3rd refrigerating unit 600: according to embodiments of the invention, the 3rd refrigerating unit 600 and silicon tetrachloride export 15 and are connected, and are suitable for carrying out the 3rd cooling process to the silicon tetrachloride through rectification process, thus can obtain the silicon tetrachloride of purifying.According to embodiments of the invention, the condition of the 3rd cooling process is also not particularly limited, and according to a particular embodiment of the invention, the 3rd cooling process can be carried out under temperature is 75 ~ 95 degrees Celsius and pressure is 0.05 ~ 0.2MPa pressure condition.According to embodiments of the invention, the purity of the silicon tetrachloride of the purifying obtained can be 99.9999 ~ 99.999999%.
4th refrigerating unit 700: according to embodiments of the invention, the 4th refrigerating unit 700 and non-vaporized heavy components export 22 and export 17 with heavy constituent and be connected, and are suitable for carrying out the 4th cooling process to heavy constituent.According to embodiments of the invention, the condition of the 4th cooling process is also not particularly limited, and according to a particular embodiment of the invention, the 4th cooling process can be carried out under temperature is 35 ~ 85 degrees Celsius and pressure is 0.05 ~ 0.2MPa pressure condition.According to embodiments of the invention, heavy constituent can contain methyl chlorosilane and a small amount of silicon tetrachloride.
As mentioned above, can have according to the system of the purifying silicon tetrachloride of the embodiment of the present invention and be selected from following advantage one of at least:
According to the system of the purifying silicon tetrachloride of the embodiment of the present invention by absorption being combined with rectifying, while absorption, carry out heat transfer heat transfer, thus the purity of guarantee silicon tetrachloride product;
Adsorption treatment and rectification process realize at Dan Tazhong by the system according to the purifying silicon tetrachloride of the embodiment of the present invention, and operation is simple, energy-saving and cost-reducing.
Below with reference to specific embodiment, present invention is described, it should be noted that, these embodiments are only descriptive, and do not limit the present invention in any way.
Embodiment
First the liquid silicon A come from preceding processes carries out vaporization process through silicon tetrachloride vaporization device 200, thus obtain gas silicon tetrachloride and non-vaporized heavy components respectively, wherein gas silicon tetrachloride is supplied to silicon tetrachloride superheater 300, obtain overheated silicon tetrachloride, then the overheated silicon tetrachloride obtained is supplied to rectification tower body by the silicon tetrachloride entrance between absorption distillation section and lights removal section, absorption distillation section adsorbing contaminant is carried out after the vapor mixing that Ta Nei and lights removal section rise, carry out rectification process simultaneously, vapour mixture containing light constituent is discharged from the vapour outlet at absorption distillation section top, then the first cooling process is carried out through the first refrigerating unit 400, obtain light constituent and the phegma containing silicon tetrachloride respectively, wherein, light constituent is supplied to the second refrigerating unit 500 and carries out the second cooling process, obtain through overcooled light constituent B, phegma is back to the steam of absorption distillation section and rising and overheated silicon tetrachloride carries out heat and mass, the silicon tetrachloride obtained through absorption distillation process continues to enter lights removal section and carries out rectification process, the light constituent obtained is successively through absorption distillation section, first refrigerating unit and the second refrigerating unit, and discharge from the silicon tetrachloride outlet between light constituent rectifying section and heavy constituent rectifying section through the silicon tetrachloride of rectification process, the silicon tetrachloride C (purity is 99.9999 ~ 99.999999%) of purifying is obtained through the 3rd refrigerating unit 600, and the heavy constituent obtained continues to enter heavies removal section carries out rectification process, in like manner, light constituent is successively through lights removal section, absorption distillation section, first refrigerating unit and the second refrigerating unit, and heavy constituent is discharged from the bottom of heavies removal section, be separated with silicon tetrachloride vaporization device and deliver to the 4th refrigerating unit 700 after the non-vaporized heavy components obtained mixes and carry out the 4th cooling process, obtain through overcooled heavy constituent D.
In the description of this specification sheets, specific features, structure, material or feature that the description of reference term " embodiment ", " some embodiments ", " example ", " concrete example " or " some examples " etc. means to describe in conjunction with this embodiment or example are contained at least one embodiment of the present invention or example.In this manual, to the schematic representation of above-mentioned term not must for be identical embodiment or example.And the specific features of description, structure, material or feature can combine in one or more embodiment in office or example in an appropriate manner.In addition, when not conflicting, the feature of the different embodiment described in this specification sheets or example and different embodiment or example can carry out combining and combining by those skilled in the art.
Although illustrate and describe embodiments of the invention above, be understandable that, above-described embodiment is exemplary, can not be interpreted as limitation of the present invention, and those of ordinary skill in the art can change above-described embodiment within the scope of the invention, revises, replace and modification.
Claims (7)
1. a system for purifying silicon tetrachloride, is characterized in that, comprising:
Rectification tower body, limits absorption distillation section, lights removal section and heavies removal section from top to bottom in described rectification tower body successively;
Silicon tetrachloride entrance, described silicon tetrachloride entrance is arranged between described absorption distillation section and described lights removal section;
Silicon tetrachloride exports, and described silicon tetrachloride outlet is arranged between described lights removal section and described heavies removal section;
Vapour outlet, described vapour outlet is arranged on described absorption distillation section top; And
Heavy constituent exports, and described heavy constituent outlet is arranged on bottom described heavies removal section.
2. the system of purifying silicon tetrachloride according to claim 1, is characterized in that, comprise further:
Silicon tetrachloride vaporization device, described silicon tetrachloride vaporization device has liquid silicon entrance, the outlet of non-vaporized heavy components and the outlet of gas silicon tetrachloride, and is suitable for carrying out vaporization process to described liquid silicon, to obtain gas silicon tetrachloride; And
Silicon tetrachloride superheater, described silicon tetrachloride superheater has gas silicon tetrachloride entrance and the outlet of overheated silicon tetrachloride, and described overheated silicon tetrachloride outlet is connected with described silicon tetrachloride entrance, described gas silicon tetrachloride entrance exports with described gas silicon tetrachloride and is connected, and be suitable for carrying out Overheating Treatment to described gas silicon tetrachloride, to obtain overheated silicon tetrachloride.
3. the system of purifying silicon tetrachloride according to claim 2, is characterized in that, comprise further:
First refrigerating unit, described first refrigerating unit is connected with described vapour outlet, and is suitable for carrying out the first cooling process to steam, to obtain phegma and light constituent, and described phegma is back to described absorption distillation section, wherein, described phegma contains silicon tetrachloride; And
Second refrigerating unit, described second refrigerating unit is connected with described first refrigerating unit, and is suitable for carrying out the second cooling process to described light constituent.
4. the system of purifying silicon tetrachloride according to claim 2, is characterized in that, comprise further:
3rd refrigerating unit, described 3rd refrigerating unit exports with described silicon tetrachloride and is connected, and is suitable for carrying out the 3rd cooling process to the silicon tetrachloride through rectification process, to obtain the silicon tetrachloride of purifying; And
4th refrigerating unit, described 4th refrigerating unit and described non-vaporized heavy components export to export with described heavy constituent and are connected, and are suitable for carrying out the 4th cooling process to described heavy constituent.
5. the system of purifying silicon tetrachloride according to claim 1, is characterized in that, the internals of described absorption distillation section are the structured packing with surface recombination sorbent material, and number of theoretical plate is 10 ~ 20 pieces.
6. the system of purifying silicon tetrachloride according to claim 1, is characterized in that, the internals of described lights removal section are wire cloth structured packing and plate ripple arranged packing, and number of theoretical plate is 20 ~ 40 pieces.
7. the system of purifying silicon tetrachloride according to claim 1, is characterized in that, the internals of described heavies removal section are wire cloth structured packing and plate ripple arranged packing, and number of theoretical plate is 5 ~ 15 pieces.
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| CN114247180B (en) * | 2021-12-24 | 2023-07-04 | 亚洲硅业(青海)股份有限公司 | Application of activated carbon containing oxygen group in removal of impurities in silicon tetrachloride |
| CN114906852A (en) * | 2022-06-15 | 2022-08-16 | 北京化工大学 | Method for producing high-purity silicon tetrachloride by combination of adsorption, rectification and photoreaction |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5176193A (en) * | 1974-12-27 | 1976-07-01 | Daikin Ind Ltd | Soseifutsuryusanno seiseihoho |
| CN101065324A (en) * | 2004-11-19 | 2007-10-31 | Memc电子材料有限公司 | Process and plant for the purification of trichlorosilane and silicon tetrachloride |
| CN101564600A (en) * | 2009-05-15 | 2009-10-28 | 天津大学 | Fiber-level high purity silicon tetrachloride continuous azeotropy lightness removing rectification method |
| CN202924742U (en) * | 2012-08-08 | 2013-05-08 | 中国恩菲工程技术有限公司 | Dichlorosilane impurity removing equipment |
| CN103241742A (en) * | 2013-05-13 | 2013-08-14 | 杨恺 | High-purity SiCl4 purification method |
| CN203959836U (en) * | 2014-06-26 | 2014-11-26 | 中国恩菲工程技术有限公司 | The system of purifying silicon tetrachloride |
-
2014
- 2014-06-26 CN CN201410299632.2A patent/CN104058409B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5176193A (en) * | 1974-12-27 | 1976-07-01 | Daikin Ind Ltd | Soseifutsuryusanno seiseihoho |
| CN101065324A (en) * | 2004-11-19 | 2007-10-31 | Memc电子材料有限公司 | Process and plant for the purification of trichlorosilane and silicon tetrachloride |
| CN101564600A (en) * | 2009-05-15 | 2009-10-28 | 天津大学 | Fiber-level high purity silicon tetrachloride continuous azeotropy lightness removing rectification method |
| CN202924742U (en) * | 2012-08-08 | 2013-05-08 | 中国恩菲工程技术有限公司 | Dichlorosilane impurity removing equipment |
| CN103241742A (en) * | 2013-05-13 | 2013-08-14 | 杨恺 | High-purity SiCl4 purification method |
| CN203959836U (en) * | 2014-06-26 | 2014-11-26 | 中国恩菲工程技术有限公司 | The system of purifying silicon tetrachloride |
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