CN104053348A - Design and implementation method for improving electromagnetic compatibility of high-power power amplifier assembly - Google Patents
Design and implementation method for improving electromagnetic compatibility of high-power power amplifier assembly Download PDFInfo
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- CN104053348A CN104053348A CN201410321833.8A CN201410321833A CN104053348A CN 104053348 A CN104053348 A CN 104053348A CN 201410321833 A CN201410321833 A CN 201410321833A CN 104053348 A CN104053348 A CN 104053348A
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Abstract
The invention relates to a design and implementation method for improving the electromagnetic compatibility of a high-power power amplifier assembly. According to the method, the repeated power division/combination mode is mainly adopted, and an isolated branching unit and a combiner are adopted to reduce electromagnetic conduction of the high-power power amplifier assembly; isolation cavities are formed between power amplification modules and between power division/combination branches, cover plates are additionally arranged on the input port and the output port of the branching unit and the input port and the output port of the combiner to reduce electromagnetic radiation of the high-power power amplifier assembly, and therefore the electromagnetic compatibility of the high-power power amplifier assembly is improved. The method belongs to the technical field of microwaves.
Description
Technical field
The present invention relates to a kind of design implementation method of improving high-power power amplifier components electromagnetic compatibility.The method mainly adopts repeatedly divide/synthetic form of merit, uses splitter and the mixer of isolated form, reduces high-power power amplifier components electromagnetism conduction; Between every power amplifier module, all increase separate space between every Lu Gongfen/synthetic branch road, the input port of splitter, mixer, output port increase cover plate, reduce the electromagnetic radiation of high-power power amplifier components, thereby improve the Electro Magnetic Compatibility of high-power power amplifier components.The method belongs to microwave technical field.
Background technology
Modern radar is had higher requirement to the performance of solid state transmitter, is embodied in: higher power output, wider working band, higher transmitter frequency, less volume and lighter weight.Power tube, as the important component part of transmitter, for realizing the performance requirement of transmitter, meets the technique and tactics index of system, also need to be in the higher level of many-sided arrival such as power output, working band, power-efficient, volume weight.GaN material is as the semi-conductive main material of three generations, with one, two generation semi-conducting material compare, have that breakdown field strength is high, unit are power density is high, electron mobility is high, pyroconductivity is high, the feature such as Heat stability is good, capability of resistance to radiation are strong, can meet the index request of New Generation Radar system, be principal mode and the developing direction of following radar system power device applications.
Compare with the power amplifier components that traditional employing Si BJT realizes, the power amplifier components working band that adopts GaN HEMT to realize is wider, and power output is larger, and assembly gain is higher, and volume is less.And Si BJT is C class A amplifier A, while only having input power to reach rated power, just can work, be difficult for occurring self-oscillation; GaN HEMT is class ab ammplifier, easily occurs self-oscillation, and electromagnetic compatibility problem is more complicated, during component design, must consider EMC Design carefully.
Summary of the invention
The object of the present invention is to provide a kind of design implementation method of improving high-power power amplifier components electromagnetic compatibility.
The present invention is that the technical solution that its technical problem of solution adopts is: telecommunication design aspect: synthetic different from a traditional multichannel, adopt divide/synthetic form of repeatedly merit, concrete merit divides/and synthetic number of times determines by the gain of power amplifier module, but divide/synthetic number of times of merit is also difficult for too much, in order to avoid increase the Insertion Loss of radio frequency path, increase power consumption, reduce the efficiency of assembly.The splitter and the mixer that use isolated form, the isolation between the every road of splitter and mixer can be accomplished 20dB.The electromagnetism that reduces high-power power amplifier components by above-mentioned design conducts.Structural design aspect: between every power amplifier module, every Lu Gongfen/all increasing separate space between synthetic branch road, the input port of splitter, mixer, output port increase cover plate, reduce the electromagnetic radiation of high-power power amplifier components.The design one of separate space and cover plate is to control tolerance well, guarantees the seal of separate space, the 2nd, by the design of special shape, increase the propagation path of revealing electromagnetic energy, and reduce the impact of the electromagnetic energy of leakage.
Compared with prior art, its remarkable advantage is in the present invention: under the prerequisite of volume that does not increase assembly, realize the EMC Design of broadband, high-power (multikilowatt) power amplifier components, the work that Assurance component is reliable and stable.
Accompanying drawing explanation
Accompanying drawing 1 is a kind of schematic diagram that improves the design implementation method of high-power power amplifier components electromagnetic compatibility.
Embodiment
Circuit design of the present invention as shown in Figure 1, adopt divide/synthetic form of merit twice, power splitter and synthesizer adopt series feed, guarantee that the isolation between every road reaches 20Db, between every power amplifier module, all increase separate space between every Lu Gongfen/synthetic branch road, the input port of splitter, mixer, output port increase cover plate, improve the Electro Magnetic Compatibility of high-power power amplifier components.
Claims (1)
1. improve a design implementation method for high-power power amplifier components electromagnetic compatibility, it is characterized by: adopt divide/synthetic form of repeatedly merit, use splitter and the mixer of isolated form, reduce the electromagnetism conduction of high-power power amplifier components; Between every power amplifier module, all increase separate space between every Lu Gongfen/synthetic branch road, the input port of splitter, mixer, output port increase cover plate, reduce the electromagnetic radiation of high-power power amplifier components, thereby improve the Electro Magnetic Compatibility of high-power power amplifier components.
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CN201410321833.8A CN104053348A (en) | 2014-07-07 | 2014-07-07 | Design and implementation method for improving electromagnetic compatibility of high-power power amplifier assembly |
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CN201410321833.8A CN104053348A (en) | 2014-07-07 | 2014-07-07 | Design and implementation method for improving electromagnetic compatibility of high-power power amplifier assembly |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109905092A (en) * | 2017-12-11 | 2019-06-18 | 华为技术有限公司 | A kind of power amplifier device and signal processing method |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN2514548Y (en) * | 2001-12-14 | 2002-10-02 | 深圳市中兴通讯股份有限公司上海第二研究所 | Wideband high-power linear power amplifier |
US20050062534A1 (en) * | 2003-09-24 | 2005-03-24 | Tachyonics Corp. Institute Of Information Technology Assessment | High-frequency power amplifier having differential inputs |
CN201252518Y (en) * | 2008-09-10 | 2009-06-03 | 中国电子科技集团公司第五十四研究所 | Big-power solid state power amplifier device |
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2014
- 2014-07-07 CN CN201410321833.8A patent/CN104053348A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2514548Y (en) * | 2001-12-14 | 2002-10-02 | 深圳市中兴通讯股份有限公司上海第二研究所 | Wideband high-power linear power amplifier |
US20050062534A1 (en) * | 2003-09-24 | 2005-03-24 | Tachyonics Corp. Institute Of Information Technology Assessment | High-frequency power amplifier having differential inputs |
CN201252518Y (en) * | 2008-09-10 | 2009-06-03 | 中国电子科技集团公司第五十四研究所 | Big-power solid state power amplifier device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109905092A (en) * | 2017-12-11 | 2019-06-18 | 华为技术有限公司 | A kind of power amplifier device and signal processing method |
CN109905092B (en) * | 2017-12-11 | 2022-02-25 | 华为技术有限公司 | Power amplification device and signal processing method |
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Application publication date: 20140917 |
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