CN104052464A - Reconfigurable silicon-based magnetic logical unit - Google Patents
Reconfigurable silicon-based magnetic logical unit Download PDFInfo
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Abstract
The invention relates to semiconductor materials, in particular to a reconfigurable silicon-based magnetic logical unit. The reconfigurable silicon-based magnetic logical unit comprises one or two reconfigurable silicon-based magnetic logical devices, one or two magnetic field generators and one or two control monitoring circuits. Each magnetic logical device comprises four electrodes in certain geometrical shapes, the four electrodes are located at the four corners of a long-strip-type silicon single-crystal substrate, and a diode is connected between the two electrodes on one long edge of the substrate in parallel. The magnetic field generators are made of magnetic materials or coils. Each control monitoring circuit comprises a current source and a voltmeter which are connected between the two electrodes at the two short edges of the substrate in parallel respectively. As for the magnetic logical unit or a magnetic logical array formed by the magnetic logical units in a combined mode, the magnetic field direction of the magnetic field generators serves as logic input, an inter-electrode voltage of the two electrodes, connected with the voltmeters in parallel, at the short edges or the sum of multiple inter-electrode voltages serves as logical output, only the connecting mode of the control monitoring circuits needs to be configured, only working currents of the current sources need to be adjusted, circuit hardware structures do not need to be changed, and multiple kinds of logical operation can be achieved.
Description
Technical field
The present invention relates to semi-conducting material and device technology field, particularly relate to a kind of reconfigurable silica-based magnetic logical block.
Background technology
Silica-based complementary metal-oxide-semiconductor (CMOS) transistor is the main flow of current logical device.But, utilize miniaturization to improve calculated performance and moved closer to its theoretical limit [Nature399,729-730 (1999)] with the method reducing costs.Magnetic logical device is hopeful to overcome this problem, current magnetic logical device be mainly divided into based on spin magnetic logical device and the magnetic logical device based on magnetic field.It is high that magnetic logical device based on spin is faced with the error rate, the problem of poor reliability, thus greatly limited their application prospect.Recently, scientist has designed the logical device [Nature494,72-76 (2013)] based on magnetic field, utilizes magnetoelectric effect huge in nonmagnetic semiconductor, in InSb (indium antimonide) material, has realized programmable magnetic logical operation.But in this magnetic logical device and semiconductor, the silicon materials of main flow are incompatible, can not use ripe silicon technology, also far apart from practical application in industry.The magneto-electric response of our magnetic logical device is based on the diode of finding in silicon increases Magnetoresistance Phenomena [Nature477,304-307 (2011)].Here, we have invented a kind of silica-based magnetic logical block based on silica-based this logical device, can by single magnetic logical block realize restructural NOT logic under room temperature, replicated logic, with logic or logic, NAND Logic, NOR-logic totally 6 kinds of logical operations, can realize by the combination of a plurality of magnetic logical blocks other the known logical operations under room temperature, also can realize random magnetic logical calculated by magnetic logical cell array.
Consider the status of silicon materials in current information industry, the silica-based magnetic logical device that designs high calculated performance and low energy consumption is significant.Our invention not only may can produce more efficient, energy-conservation microprocessor, and may promote traditional silicon electronics to the upgrading of magneto-electronics.
Summary of the invention
The object of this invention is to provide a kind of reconfigurable silica-based magnetic logical block, it is characterized in that, comprise reconfigurable silica-based magnetic logical device, magnetic field generator and control observation circuit; Described silica-based magnetic logical device comprises silicon single crystal substrate, the first electrode, the second electrode, third electrode, the 4th electrode, diode; Described magnetic field generator be positioned at magnetic logical device above, below, the left side, the right, above or below; Described control testing circuit comprises current source and voltmeter, and current source and voltmeter are connected in parallel on respectively between two electrodes of two minor faces of magnetic logical device; Control the logical operation that the configuration mode of testing circuit and the operating current of current source size determine silica-based magnetic logical block realization.
Described silica-based magnetic logical device, control observation circuit and magnetic field generator are one or two, and the quantity of control observation circuit is consistent with quantity with silica-based magnetic logical device, and the quantity of magnetic field generator is identical or not identical with the quantity of silica-based magnetic logical device.
The magnetic field of described magnetic field generator or the direction of magnetization are the input logic of silica-based magnetic logical block; The voltage across poles of two electrodes of minor face that the voltage across poles of two electrodes of minor face that voltmeter is in parallel or two voltmeters are in parallel and be the output logic of silica-based magnetic logical block.
The configuration mode of described control observation circuit has two kinds: current source is connected between two electrodes of the connected minor face of diode cathode, and voltmeter is connected between two electrodes of the connected minor face of diode cathode; Or current source is connected between two electrodes of the connected minor face of diode cathode, and voltmeter is connected between two electrodes of the connected minor face of diode cathode.
The output logic of described silica-based magnetic logical block realize " copying ", " non-", " with ", a kind of in "or", NAND or nondisjunction logic.
The first electrode of described silica-based magnetic logical device, the second electrode, third electrode, the 4th electrode deposit respectively or are attached on four angles of silicon single crystal substrate, and described diodes in parallel is between two electrodes on the long limit of silicon single crystal substrate.
Described magnetic field generator is magnetic material or coil, and its magnetic field that puts on silica-based magnetic logical device is the leakage field of magnetic material, or the magnetic field of coil generation.
The geometric configuration of described electrode is rectangle, and length-width ratio is greater than 0.1; Described electrode forms ohmic contact, be that indium metal In, aluminium Al, gallium Ga, golden Au or titanium Ti etc. form ohmic contact, or heavy doping technique forms ohmic contact.
Described silicon single crystal substrate is strip, and its resistivity need be greater than 0.1 Ω cm; The mobility of described silicon single crystal substrate, for N-shaped silicon, reaches 0.1m
2/ Vs; For p-type silicon, reach 0.04m
2/ Vs.
Described diode is silicon-based diode, silica-based voltage stabilizing didoe, silica-based Schottky diode or Si-based tunneling diode.
The invention has the beneficial effects as follows and designed reconfigurable silica-based magnetic logical device and the silica-based magnetic logical block based on this device.In silica-based magnetic logical block, comprise one or more silica-based magnetic logical devices, the magnetic signal that one or more magnetic field generators of take provide is input, using wherein two inter-electrode voltages of silica-based magnetic logical device or the sum voltages of a plurality of voltage across poles as output, by the regulation and control to the design of one or more current source connected modes and operating current, below temperature 600K, under condition more than magnetic field intensity 0.05T, realized can carry out " copying ", " non-", " with ", the silica-based magnetic logical block of the logical operation such as "or", NAND and nondisjunction.Silica-based magnetic logical device restructural, in the silica-based magnetic logical block realizing, does not need to change the hardware configuration of circuit, only needs to change control monitoring means and can realize different logical operations.According to the Voltage-output of logical operation, utilize spin transfer torque (STT) or produce the method in oersted magnetic field, change the direction of magnetization of magnet, and then change logic input.Utilize this method the unit cascaded combination of Different Logic, can realize any known logical operation.FPGA (Field Programmable Gate Array) can improve calculated performance, and magnetic logical operation combines logical operation and non-volatile magnetic storage, can be so that process chip is more integrated, energy-conservation and efficient.And our device is silica-based, compatible with silicon-based semiconductor industry, performance is outstanding, and simple in structure, the prices of raw and semifnished materials are moderate, and environmental friendliness.
Accompanying drawing explanation
Fig. 1 is reconfigurable silica-based magnetic logical device structure chart;
Fig. 2 is for controlling two kinds of configuration mode schematic diagrames of observation circuit;
Fig. 3 is for realizing the silica-based magnetic logical unit structure figure of " copying " and " non-" logical operation;
Fig. 4 for realizing " with ", the silica-based magnetic logical unit structure figure of "or", nondisjunction and NAND logical operation;
Fig. 5 be in silica-based magnetic logical cell array any two bits carry out " with ", the structure chart of "or", nondisjunction and NAND logical operation;
Embodiment
The present invention relates to a kind of reconfigurable silica-based magnetic logical block, below in conjunction with specific embodiment, the present invention is elaborated, but content not thereby limiting the invention.
Except as otherwise noted, in embodiment, the direction of magnetization of magnetic field generator is as the logic input of whole silica-based magnetic logical device, and the direction of magnetization is considered as input logic " 1 " when downward, is considered as input logic " 0 " when the direction of magnetization makes progress.Below in conjunction with accompanying drawing, the invention will be further described:
Figure 1 shows that the structural map of magnetic logical device 100.It by resistivity, is the N-shaped silicon single crystal substrate cut growth strip silicon single crystal substrate 101 of 3000 Ω cm, respectively by the first electrode 111, the second electrode 112, third electrode 113, totally 4 Ti metal electrodes of the 4th electrode 114 is deposited on four angles on strip silicon single crystal substrate 101 surfaces, the first electrode 111, the second electrode 114 is positioned at the long edge, left side of strip silicon single crystal substrate, parallel voltage-stabilizing diode 121 between the first electrode 111 and the 4th electrode 114, wherein, diode can just connect also can reversal connection, but diode 121 positive poles are connected with the first electrode 111, the mode better effects if that negative pole is connected with the 4th electrode 114, because diode only provides current switch herein, it is positive and negative that magnetic logical device utilizes Hall effect to produce with magnetic field, the relevant output voltage of magnetic field size, the cut-in voltage scope of diode is: 0.1V～50V.Made thus reconfigurable silica-based magnetic logical device 100.
Control observation circuit for two kinds that Figure 2 shows that silica-based magnetic logical device 100, Fig. 2 a is for controlling observation circuit A200, and Fig. 2 b is for controlling observation circuit B300.In control observation circuit A200 and control observation circuit B300, the position of current source and voltmeter is exchanged, and in two kinds of control observation circuits, current source and voltmeter are Mirror Symmetry about silicon single crystal substrate minor face edge; Diode connected mode is constant.The size of the Hall voltage producing in silica-based magnetic logical device is identical, and symbol is contrary.In controlling observation circuit A200, current source 131 is attempted by between the second electrode 112 and the first electrode 111 in silica-based magnetic logical device 100, for circuit provides constant current, voltmeter 132 is attempted by between the third electrode 113 and the 4th electrode 114 in silica-based magnetic logical device 100, for the voltage of measuring between third electrode 113 and the 4th electrode 114, as logical block, exports.In controlling observation circuit B300, current source 131 is attempted by between the 4th electrode 114 and third electrode 113 in silica-based magnetic logical device 100, for circuit provides constant current, voltmeter 132 is attempted by between the first electrode 111 and the second electrode 112 in silica-based magnetic logical device 100, for the voltage of measuring between third electrode 113 and the 4th electrode 114, as logical block, exports.
When practical application, conventionally in equal parallel-current source between the second electrode 112 and the first electrode 111, between third electrode 113 and the 4th electrode 114, but when realizing concrete logic, only have a current source job, another current source is in off-state; Selection principle for current source specific works electric current, mainly contains: for " copying " computing, control the keen current value that electric current need to be greater than magnetic input 1; For NOT operation, control the keen current value that electric current need to be greater than magnetic input 0; For Fig. 4 correspondence, realize " with " and inclusive-OR operation, both control electric currents are greater than the keen current value of magnetic input (1,1), and the control electric current of AND operation is less than the control electric current of inclusive-OR operation; For corresponding NAND and the negative OR operation of realizing of Fig. 4, both control electric currents are greater than the keen current value of magnetic input (0,0), and the control electric current of negative OR operation is less than the control electric current of NAND operation; For random magnetic logical operation corresponding to Fig. 5, because it comprises two bits, so the criterion with " non-" with " copying " that settles the standard of its single bit current source size.Voltmeter is desired voltage table, and the effect in silica-based magnetic logical block is only monitoring two interelectrode voltages in parallel, and having or not of voltmeter do not affect two interelectrode voltage swings in parallel.
Embodiment 1
The present embodiment is at temperature 300K, magnetic field intensity 0.15T, under the burning voltage 6.8V condition of voltage stabilizing didoe, the magnetic signal that a magnetic field generator is provided, by changing connected mode and the regulation and control operating current of current source and voltmeter, realize the logical operation of " copying " and " non-".The voltage that assigned voltage table measures is considered as logic output " 1 " while being greater than 10mV, measuring voltage is less than 10mV and is considered as logic output " 0 ".No matter how other parameters of logical block change, and the criterion of 10mV remains unchanged.
Figure 3 shows that a silica-based magnetic logical block 400 that realizes " copying " and NOT operation based on reconfigurable silica-based magnetic logical device 100.Magnetic field generator 141 is selected the permanent magnet of NdFeB material, magnetic field generator 141 is placed horizontally at the left side of silica-based magnetic logical device 100, the control observation circuit of magnetic logical device 100 can select to control observation circuit A200, also can select to control observation circuit B300.When selecting control observation circuit A200, regulating the constant current of current source 131 is 790 μ A, when the input logic in silica-based magnetic logical block 400 is respectively " 1 " and " 0 ", the measuring voltage of voltmeter 132 is respectively 20.3mV and 5.7mV, the output logic that is silica-based magnetic logical block 400 is respectively " 1 " and " 0 ", and known silica-based magnetic logical block 400 has realized the arithmetic logic of " copying " in the situation that selecting control observation circuit A200.When selecting control observation circuit B300, regulating the constant current of current source 131 is 680 μ A, when the input logic in silica-based magnetic logical block 400 is respectively " 1 " and " 0 ", the measuring voltage of voltmeter 132 is respectively 5.6mV and 18.5mV, the output logic that is silica-based magnetic logical block 400 is respectively " 0 " and " 1 ", and known silica-based magnetic logical block 400 has realized the arithmetic logic of " non-" in the situation that selecting control observation circuit B300.
Embodiment 2
The present embodiment is at temperature 300K, magnetic field intensity 0.15T, under the burning voltage 6.8V condition of voltage stabilizing didoe, use two magnetic signals that two magnet provide as input, by changing the connected mode of current source and voltmeter and regulating and controlling operating current, can realize " with ", the logical operation of "or", NAND and nondisjunction.
Figure 4 shows that one based on reconfigurable silica-based magnetic logical device 100 realize " with ", the logical block 500 of "or", nondisjunction and NAND logical operation.The first magnetic field generator 142 and second magnetic field generator 143 1 the first from left right sides are placed in parallel in the both sides of magnetic logical device 100, magnetic field generator is all selected the permanent magnet of NdFeB material, the control observation circuit of magnetic logical device 100 can select to control observation circuit A200, also can select to control observation circuit B300.Define the first magnetic field generator 142 logics and be input as a, when the second magnetic field generator 143 logics are input as b, the dual input logic of silica-based magnetic logical block 500 is (a, b), and wherein a, b can be " 1 " or " 0 "; The voltage that voltmeter measures is considered as logic output " 1 " while being greater than 20mV, measuring voltage is less than 20mV and is considered as logic output " 0 ".
Input logic in silica-based magnetic logical block 500 is respectively (1,1), (1,0), (0,1) and (0,0) time, if select, control observation circuit A200, and to regulate the constant current of current source 131 be 775 μ A, the measuring voltage of voltmeter 132 is respectively 11.5mV, 4.7mV, 4.7mV and 4.6mV, the output logic that is silica-based magnetic logical block 500 is respectively " 1 ", " 0 ", " 0 " and " 0 ", known now silica-based magnetic logical block 500 realized " with " arithmetic logic;
If select, control observation circuit A200, and the constant current that regulates current source 131 is 790 μ A, the measuring voltage of voltmeter 132 is respectively 20.3mV, 11.0mV, 10.9mV and 5.7mV, the output logic of silica-based magnetic logical block 500 is respectively " 1 ", " 1 ", " 1 " and " 0 ", known now silica-based magnetic logical block 500 has realized the arithmetic logic of "or";
If select, control observation circuit B300, and the constant current that regulates current source 131 is 665 μ A, the measuring voltage of voltmeter 132 is respectively 5.1mV, 5.2mV, 5.2mV and 11.2mV, the output logic of silica-based magnetic logical block 500 is respectively " 0 ", " 0 ", " 0 " and " 1 ", known now silica-based magnetic logical block 500 has realized the arithmetic logic of nondisjunction;
If select, control observation circuit B300, and the constant current that regulates current source 131 is 680 μ A, the measuring voltage of voltmeter 132 is respectively 5.6mV, 11.1mV, 11.1mV and 18.5mV, the output logic of silica-based magnetic logical block 500 is respectively " 0 ", " 1 ", " 1 " and " 1 ", known now silica-based magnetic logical block 500 has realized the arithmetic logic of NAND;
Embodiment 3
The present embodiment is at temperature 300K, magnetic field intensity 0.15T, under the burning voltage 6.8V condition of voltage stabilizing didoe, to two magnetic signals that the magnet of two positions provides arbitrarily, by changing connected mode and the regulation and control operating current of current source and voltmeter, can realize the direct FPGA (Field Programmable Gate Array) computing of random magnetic cell, comprise " with ", "or", NAND and nondisjunction.
The present embodiment is considered as a basic bit by the magnetic logical block 400 that comprises a magnetic field generator 141 and a magnetic logical device 100 shown in Fig. 3, and magnetic field generator 141 is placed horizontally at the left side of magnetic logical device 100.The present embodiment has been realized the boolean calculation of two bits of optional position in the M*N storage array being comprised of bit or circular storage array.For the interference being produced by adjacent magnet, can add adequate shielding material.
Fig. 5 a and Fig. 5 b be respectively to any two bits carry out " with ", silica-based magnetic logical block AS600 and the silica-based magnetic logical block BS700 of "or", nondisjunction and NAND logical operation.The logic that defines the magnetic field generator of the first bit is input as a, and when the logic of the magnetic field generator of second bit is input as b, the dual input logic of silica-based magnetic logical block AS600 and BS700 is (a, b), and wherein a, b can be " 1 " or " 0 "; The output voltage of definition adder is the output of whole magnetic logical block AS600 and BS700; The output voltage of adder is greater than 20mV, is considered as logic output " 1 ", and voltage is less than 20mV and is considered as logic output " 0 ".
Silica-based magnetic logical block AS600 selects and controls observation circuit A200, the measuring voltage of the first bit 401 voltmeter 132-1 and second bit 402 voltmeter 132-2 is exported by adder 133-1, and the magnetic field generator 141-1 of the first bit 401 and the magnetic field generator 141-2 of second bit 402 all select the permanent magnet of NdFeB material.Input logic at silica-based magnetic logical block AS600 is respectively (1,1), (1,0), (0,1) and (0,0) time, regulate the constant current of current source 131-1 and 131-2 to be respectively 775 μ A and 715 μ A, the output voltage of adder 133-1 is respectively 25.4mV, 17.5mV, 18.6mV and 10.7mV, the output logic of silica-based magnetic logical block AS600 is respectively " 1 ", " 0 ", " 0 " and " 0 ", known now silica-based magnetic logical block AS600 realized " with " arithmetic logic; Regulate the constant current of current source 131-1 and 131-2 to be respectively 790 μ A and 730 μ A, the output voltage of adder 133-1 is respectively 43mV, 27.3mV, 28.4mV and 12.7mV, the output logic that is silica-based magnetic logical block AS600 is respectively " 1 ", " 1 ", " 1 " and " 0 ", known now silica-based magnetic logical block AS600 has realized the arithmetic logic of "or";
Silica-based magnetic logical block BS700 selects and controls observation circuit B300, the measuring voltage of the first bit 403 voltmeter 132-3 and second bit 404 voltmeter 132-4 is exported by adder 133-2, and the magnetic field generator 141-3 of the first bit 403 and the magnetic field generator 141-4 of second bit 404 all select the permanent magnet of NdFeB material.Input logic at silica-based magnetic logical block BS700 is respectively (1,1), (1,0), (0,1) and (0,0) time, regulate the constant current of current source 131-3 and 131-4 to be respectively 680 μ A and 705 μ A, the output voltage of adder 133-2 is respectively 11.1mV, 21.6mV, 24.9mV and 35.4mV, the output logic of silica-based magnetic logical block BS700 is respectively " 0 ", " 1 ", " 1 " and " 1 ", known now silica-based magnetic logical block BS700 has realized the arithmetic logic of NAND; Regulate the constant current of current source 131-3 and 131-4 to be respectively 665 μ A and 690 μ A, the output voltage of adder 133 is respectively 9.6mV, 14.9mV, 16.9mV and 22.2mV, the output logic that is silica-based magnetic logical block BS700 is respectively " 0 ", " 0 ", " 0 " and " 1 ", known now silica-based magnetic logical block BS700 has realized the arithmetic logic of nondisjunction.
Claims (10)
1. a reconfigurable silica-based magnetic logical block, is characterized in that, comprises reconfigurable silica-based magnetic logical device, magnetic field generator and controls observation circuit; Described silica-based magnetic logical device comprises silicon single crystal substrate, the first electrode, the second electrode, third electrode, the 4th electrode, diode; Described magnetic field generator be positioned at magnetic logical device above, below, the left side, the right, above or below; Described control testing circuit comprises current source and voltmeter, and current source and voltmeter are connected in parallel on respectively between two electrodes of two minor faces of magnetic logical device; Control the logical operation that the configuration mode of testing circuit and the operating current of current source size determine silica-based magnetic logical block realization.
2. reconfigurable silica-based magnetic logical block according to claim 1, it is characterized in that, described silica-based magnetic logical device, control observation circuit and magnetic field generator are one or two, the quantity of control observation circuit is consistent with quantity with silica-based magnetic logical device, and the quantity of magnetic field generator is identical or not identical with the quantity of silica-based magnetic logical device.
3. reconfigurable silica-based magnetic logical block according to claim 1 and 2, is characterized in that, the magnetic direction of described magnetic field generator is the input logic of silica-based magnetic logical block; The voltage across poles of two electrodes of minor face that the voltage across poles of two electrodes of minor face that voltmeter is in parallel or two voltmeters are in parallel and be the output logic of silica-based magnetic logical block.
4. reconfigurable silica-based magnetic logical block according to claim 1, it is characterized in that, the configuration mode of described control observation circuit has two kinds: current source is connected between two electrodes of the connected minor face of diode cathode, and voltmeter is connected between two electrodes of the connected minor face of diode cathode; Or current source is connected between two electrodes of the connected minor face of diode cathode, and voltmeter is connected between two electrodes of the connected minor face of diode cathode.
5. reconfigurable silica-based magnetic logical block according to claim 1, is characterized in that, the output of described silica-based magnetic logical block realize " copying ", " non-", " with ", a kind of in "or", NAND or nondisjunction logic.
6. reconfigurable silica-based magnetic logical block according to claim 1, it is characterized in that, the first electrode of described silica-based magnetic logical device, the second electrode, third electrode, the 4th electrode deposit respectively or are attached on four angles of silicon single crystal substrate, and described diodes in parallel is between two electrodes on the long limit of silicon single crystal substrate.
7. reconfigurable silica-based magnetic logical block according to claim 1, is characterized in that, described magnetic field generator is magnetic material or coil, and its magnetic field that puts on silica-based magnetic logical device is the leakage field of magnetic material, or the magnetic field of coil generation.
8. according to the reconfigurable silica-based magnetic logical block described in claim 1 or 6, it is characterized in that, the geometric configuration of described electrode is rectangle, and length-width ratio is greater than 0.1; Described electrode forms ohmic contact, be that indium metal In, aluminium Al, gallium Ga, golden Au or titanium Ti etc. form ohmic contact, or heavy doping technique forms ohmic contact.
9. according to the reconfigurable silica-based magnetic logical block described in claim 1 or 6, it is characterized in that, described silicon single crystal substrate is strip, and its resistivity need be greater than 0.1 Ω cm; The mobility of described silicon single crystal substrate, for N-shaped silicon, reaches 0.1m
2/ Vs; For p-type silicon, reach 0.04m
2/ Vs.
10. according to the reconfigurable silica-based magnetic logical block described in claim 1 or 6, it is characterized in that, described diode is silicon-based diode, silica-based voltage stabilizing didoe, silica-based Schottky diode or Si-based tunneling diode.
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| CN106374034A (en) * | 2016-09-05 | 2017-02-01 | 清华大学 | Reconfigurable magnetic logic device and preparation method therefor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105206742A (en) * | 2015-08-18 | 2015-12-30 | 清华大学 | Room temperature programmable magnetic logic device |
| CN105206742B (en) * | 2015-08-18 | 2017-08-11 | 清华大学 | A kind of room temperature may be programmed magnetic logical device |
| CN106374034A (en) * | 2016-09-05 | 2017-02-01 | 清华大学 | Reconfigurable magnetic logic device and preparation method therefor |
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