CN104051479B - High k dielectric network for semiconductor devices - Google Patents
High k dielectric network for semiconductor devices Download PDFInfo
- Publication number
- CN104051479B CN104051479B CN201310451790.0A CN201310451790A CN104051479B CN 104051479 B CN104051479 B CN 104051479B CN 201310451790 A CN201310451790 A CN 201310451790A CN 104051479 B CN104051479 B CN 104051479B
- Authority
- CN
- China
- Prior art keywords
- dielectric
- substrate
- colour filter
- lenticule
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Abstract
A kind of method the invention provides image sensing device and for manufacturing image sensing device.Exemplary image sensor part includes the substrate with front and the back side, the multiple sensor elements being arranged at substrate face.Each operable radiation projected with sensing to substrate back of multiple sensor elements.Imaging sensor also includes being arranged on the high k dielectric grid above substrate back.High k dielectric grid has high k dielectric groove and side wall.Imaging sensor also includes being arranged on the colour filter and lenticule above high k dielectric grid.The invention also discloses the high k dielectric network for semiconductor devices.
Description
The cross reference of related application
This application claims the interests for the U.S. Patent Application No. 61/799934 submitted on March 15th, 2013, its whole
Content is hereby expressly incorporated by reference.The U.S. Patent Application No. 13/796,576 that the application also submitted with March 12nd, 2013
Correlation, entire contents are hereby expressly incorporated by ginseng.
Technical field
The present invention relates to technical field of semiconductors, more particularly, to the high k dielectric grid knot for semiconductor devices
Structure.
Background technology
Integrated circuit (IC) technology is continually improved.This improve frequently involves the reductions of device geometries to obtain
Obtain lower manufacturing cost, higher device integration density, the higher speed of service, and better performance.With because reducing
The advantage that physical dimension is realized, can be improved directly against IC devices.A kind of such IC devices are image sensing devices.Figure
Picture senser element includes pel array, and pel array is used for detection light and records the intensity (brightness) of the light detected.Pixel battle array
Row respond light by stored charge, i.e. the more caused electric charges of light are more.Then, electric charge can be used for (for example, passing through it
His circuit) color and the brightness of suitable applications for such as digital camera are provided.The pixel grid of general type includes electric charge
Coupled apparatus (CCD) imaging sensor or complementary metal oxide semiconductor (CMOS) image sensing device.
One type of image sensing device is back side illumination image sensor (BIS) device.BIS devices, which are used to sense, to be projected
To the amount of the light of substrate (image sensor circuit of support BIS devices) back surface.Pel array is located at the front side of substrate,
And substrate is sufficiently thin allows projection to reach pel array to the light of substrate backside.With preceding illuminated (FSI) imaging sensor
Part is compared, and BIS devices provide high fill factor and reduce destructive interference.But because device ratio, BIS technologies are constantly entered
Row is improved further to improve the quantum efficiency of BIS devices.Therefore, although existing BIS devices and this kind of BIS devices of manufacture
Method has substantially met its predetermined purpose, but with the continuous diminution of device size, it can't be equal in all respects
Fully meet requirement.
The content of the invention
In order to solve the problems of in the prior art, according to an aspect of the invention, there is provided a kind of image passes
Inductor component, including：
Substrate, there is front and back；
Multiple sensing elements, are arranged on the front of the substrate, and each of the multiple sensing element is operable
With radiation of the sensing projection to the back side of the substrate；
High k dielectric grid, is arranged on the back side of the substrate, and the high k dielectric grid includes：High k dielectric groove,
With the high k dielectric layer as its bottom；With, side wall, formed by a part for the high k dielectric layer；
Colour filter, it is arranged on above the high k dielectric grid；And
Lenticule, it is arranged on above the high k dielectric grid.
In an alternative embodiment, the high k dielectric groove is aligned with corresponding sensing element.
In an alternative embodiment, the colour filter and corresponding high k dielectric trough aligned.
In an alternative embodiment, the colour filter is arranged in the high k dielectric groove.
In an alternative embodiment, the lenticule and corresponding high k dielectric trough aligned.
In an alternative embodiment, high k dielectric grid, the colour filter and the lenticule are by with different refractivity
Material be made.
In an alternative embodiment, the refractive index of the high k dielectric grid is substantially less than the colour filter and described micro-
The refractive index of mirror.
In an alternative embodiment, described image sensor part further comprises：Coating, it is arranged on the high k dielectric net
Above the side wall of lattice.
In an alternative embodiment, described image sensor part further comprises：Dielectric layer, it is filled in the high k dielectric ditch
In groove.
In an alternative embodiment, the colour filter and the lenticule are arranged on the dielectric layer.
According to another aspect of the present invention, a kind of device is additionally provided, including：
Substrate, there is front and back；
Multiple sensing elements, the front of the substrate is arranged on, the multiple sensing element is operable to be thrown to sense
The radiation at the back side of substrate described in directive；
Multiple colour filters and lenticule, it is arranged on the back side of the substrate and is aligned with corresponding sensing element；With
And
High k dielectric grid, it is arranged on the back side of the substrate so that every in the multiple colour filter and lenticule
It is individual separated from one another in the horizontal direction by high k dielectric grid, wherein, the high k dielectric grid includes：High k dielectric ditch
Groove, there is the high k dielectric layer as its bottom；With, side wall, formed by a part for the high k dielectric layer.
In an alternative embodiment, the colour filter is arranged on above the high k dielectric groove.
In an alternative embodiment, the lenticule is arranged on above the high k dielectric groove.
In an alternative embodiment, the refractive index of the high k dielectric grid is substantially less than the colour filter and described micro-
The refractive index of mirror.
In an alternative embodiment, the device further comprises：Coating, it is arranged on the described of the high k dielectric grid
Above side wall.
In an alternative embodiment, the device further comprises：Dielectric layer, it is arranged on the colour filter and is situated between with the high k
Between electric groove.
According to another aspect of the invention, a kind of method is additionally provided, including：
Substrate with front and back is provided, wherein, multiple sensing elements are arranged on the front of the substrate, institute
Each stated in multiple sensing elements is operable with radiation of the sensing projection to the back side of the substrate；
High k dielectric layer is deposited in the back side of the substrate；
The part of the high k dielectric layer is removed to form high k dielectric grid；And
Colour filter and lenticule are formed above the high k dielectric grid.
In an alternative embodiment, forming the high k dielectric grid includes：Patterning is formed above the high k dielectric layer
Hard mask；And through a part for high k dielectric layer described in the hard mask etch of the patterning to form high k dielectric ditch
Groove and side wall, wherein, remaining high k dielectric layer forms the bottom of the high k dielectric groove.
In an alternative embodiment, methods described further comprises：Bottom is deposited between the substrate and the high k dielectric layer
Portion's antireflection coating (BARC) layer；And form coating above the side wall of the high k dielectric grid.
In an alternative embodiment, methods described further comprises：, will before the colour filter and the lenticule is formed
Different dielectric layers is filled into the high k dielectric groove；And the top surface of the planarization different dielectric layer make it is described not
The top surface of same dielectric layer flushes with the top surface of the high k dielectric grid.
Brief description of the drawings
The present invention may be better understood in the specific descriptions being read in conjunction with the figure hereafter.It should be emphasized that according in industry
Standard practices, the purpose that all parts are not drawn to scale and are merely to illustrate.In fact, in order to clearly discuss, each portion
The size of part arbitrarily can increase or reduce.
Fig. 1 is the diagrammatic section side view according to the IC-components precursor (precursor) of various aspects of the invention
Figure.
Fig. 2 is according to method of the manufacture of various aspects of the invention for the high k dielectric grid of IC-components
Flow chart.
Fig. 3 to Fig. 6 is the diagrammatic section side view of IC-components in each fabrication stage according to Fig. 2 method
Figure.
Embodiment
Disclosure below provides many different embodiments or example for being used to implement the different characteristic of the present invention.Below
The instantiation for describing part and configuration is of the invention to simplify.Certainly, this is only example, is not intended to limit the invention.Example
Such as, in the following description, first component is formed can include the first component and that is formed over or in second component
The embodiment that two parts directly contact, and can also be included between first component and second component and can form extra portion
Part, so that the embodiment that first component and second component can be not directly contacted with.In addition, the present invention can be in different instances
Middle repeated reference symbol and/or character.This repetition is for simplicity and clarity, and itself not indicate that described more
Relation between individual embodiment and/or configuration.
Moreover, for the ease of description, such as " in ... lower section ", " ... under ", " bottom ", " ... on ", " top "
It can be used for describing an element or part as depicted and another (or other) herein Deng space correlation term
The relation of element or part.In addition to the orientation described in figure, space correlation term is intended to include device in use or operation
Different azimuth.If for example, the device in upset accompanying drawing, be described as other elements or part " under " or " lower section " member
Part by be oriented in other elements or part " on ".Therefore, exemplary term " ... under " can be included in top and
In two kinds of lower section orientation.Device can be orientated other directions (being rotated by 90 ° or in other orientation), and can correspondingly solve
Release the descriptor for being used for space correlation herein.
Fig. 1 is the part diagrammatic section according to the embodiment of integrated circuit (IC) device precursor of various aspects of the invention
Side view.Example IC device precursors 100 can be IC chip, system on chip (SoC) or their part, and it includes all
Such as resistor, capacitor, inductor, diode, mos field effect transistor (MOSFET), complementary MOS
(CMOS) transistor, bipolar junction transistor (BJT), laterally diffused MOS (LDMOS) transistor, high power MOS transistor, fin
The various passive and active microelectronic component of formula field-effect transistor (FinFET), other suitable components or combinations thereof.
IC device precursors 100 can include the first semiconductor crystal wafer for being stacked on the second semiconductor die circular top part.For example, the
Semiconductor wafer is such as back side illumination image sensor (BIS), complementary metal oxide semiconductor (CMOS) imaging sensor
(CIS), the imaging sensor of charge coupling device (CCD), CMOS active pixel sensor (APS) or passive pixel sensor.Can be with
Imaging sensor is manufactured by complementary metal oxide semiconductor known in the art (CMOS) technology.For example, p-type light has
Source region is formed above the substrate of imaging sensor wafer with n-type light active region, and photodiode work is played so as to be formed
PN junction.It is related to generate the intensity for the light for being irradiated to light active region or brightness that imaging sensor can include transistor
Signal.Second semiconductor crystal wafer can be application specific integrated circuit (ASIC) wafer or carrier wafer.
First semiconductor crystal wafer and the second semiconductor crystal wafer can be engaged by the proper engagement technology such as directly engaged
To together.According to some embodiments, connection between the first semiconductor crystal wafer and the second semiconductor crystal wafer can by metal with
The engagement (for example, engagement of copper and copper) of metal, dielectric are engaged (for example, oxide and oxide connect with dielectric
Close), metal with it is dielectric engage (for example, engagement of copper and oxide), their any combination direct joint technology
Realize.In certain embodiments, the first semiconductor crystal wafer is connected to each other with the second semiconductor crystal wafer by suitable three-dimensional structure.
Adhesion layer can also be used.In addition it is possible to implement reduction process incites somebody to action one or two single semiconductor crystal wafers from thinning back side.Work is thinned
Skill can include mechanical milling tech and/or chemical reduction technique.
IC device precursors 100 include the substrate 102 with front 104 and the back side 106 (reversed position shown in Fig. 1).
In certain embodiments, substrate 102 includes the elemental semiconductor of such as silicon or germanium, and/or such as SiGe, carborundum, GaAs,
The compound semiconductor of indium arsenide, gallium nitride and indium phosphide.Other exemplary substrate materials include such as silicon germanium carbide, phosphatization
The alloy semiconductor of arsenic gallium and InGaP.Substrate 102 can also include including soda-lime glass, fused silica, tekite
English, calcirm-fluoride (CaF2) and/or other suitable materials non-semiconducting material.In certain embodiments, substrate 102 has all
One or more such as epitaxial layer is limited to layer therein.For example, in one such embodiment, substrate 102 includes coverage block
Epitaxial layer above shape semiconductor.The substrate of other layerings includes semiconductor-on-insulator (SOI) substrate.In a this SOI
In substrate, substrate 102 includes buried oxide (BOX) layer formed by the technique for such as noting oxygen isolation (SIMOX).In difference
In embodiment, the form of substrate 102 can be planar substrate, fin, nano wire, and/or known to persons of ordinary skill in the art
Other forms.
Substrate 102 can include one or more doped region (not shown).In illustrative embodiments, substrate 102 is mixed
Miscellaneous p-type dopant.Suitable p-type dopant includes boron, gallium, indium, other suitable p-type dopants and/or combinations thereof.Lining
Bottom 102 can also include one or more regions of doping n-type dopant, and n-type dopant is such as phosphorus, arsenic, other suitable n
Type dopant, and/or combinations thereof.The technique of such as ion implanting or diffusion can be used real in each step and technology
Apply doping.
Substrate 102 can include the isolated part of such as local oxidation of silicon (LOCOS) and/or shallow trench isolation (STI)
(not shown), so as to by the substrate 102 or the different zones of interior formation and/or device separate (or isolation).Isolated part
Including silica, silicon nitride, silicon oxynitride, other suitable materials or combinations thereof.Formed by any suitable technique
Isolated part.For example, STI forming step includes photoetching process, etches groove in the substrate (for example, by using dry ecthing
And/or wet etching) and use dielectric material to fill groove (for example, by using chemical vapor deposition method).The ditch of filling
Groove can have sandwich construction, such as using silicon nitride or silica-filled thermal oxide lining.
As described above, IC device precursors 100 include sensing element 110 (also referred to as pixel).The detection of sensing element 110 refers to
The intensity (brightness) of radiation 112 to the back side 106 of substrate 102.In illustrative embodiments, incident radiation 112 is visible ray.
Alternatively, radiation 112 can be infrared ray (IR), ultraviolet (UV), X ray, microwave, other suitable emission types or they
Combination.In illustrative embodiments, sensing element 110 is configured to and such as red (R) optical wavelength, green (G) optical wavelength or indigo plant
(B) consistent wavelength of the specific light of optical wavelength.In other words, sensing element 110 is configured to detect the strong of specific wavelength of light
Spend (brightness).In one embodiment, sensing element 110 is the pixel in pel array.
In illustrative embodiments, sensing element 110 includes the photoelectric detector of such as photodiode, photoelectric detector
Include photo-sensing area (or photosensitive region) 110R, 110G and 110B respectively, they detect the light of red light wavelength, green glow ripple respectively
Long light and the intensity (brightness) of the light of blue light wavelength.Photo-sensing area (or photosensitive region) 110R, 110G and 110B can be wrapped
Include the doped region to be formed and there is n-type dopant and/or p-type dopant in substrate 102.In one embodiment, light sensing
Region 110R, 110G and 110B can be the n-type doped regions by such as spreading and/or the method for ion implanting is formed.Pass
Sensing unit 110 further comprises such as transfering transistor (not shown), reset transistor (not shown), source following transistor
(not shown), selection transistor (not shown), the various transistors of other suitable transistors or combinations thereof.Optical sensing area
It is specific that domain 110R, 110G and 110B and various transistors (can be collectively referenced as image element circuit) allow sensing element 110 to detect
The intensity of the light of wavelength.Sensing element 110 can be supplied to provide sensing extra circuit, input and/or output end
The operating environment of element 110 and/or the communication for supporting sensing element 110.
IC device precursors 100 further comprise that the top of front 104 for being arranged on substrate 102 (is included on sensing element 110
Multilayer interconnection (MLI) part just).MLI parts are connected to the various assemblies of such as imaging sensor of sensing element 110, make
The various assemblies for obtaining imaging sensor are operable for the response appropriate to irradiation light (image radiation) generation.MLI parts can
Including various conductive components, can be the perpendicular interconnection part of such as contact and/or through hole 122, and/or can such as lead
The horizontal cross tie part of line 124.Various conductive components 122 and 124 can include the conductive material of such as metal.In instances, it is golden
Category includes aluminium, aluminium/silicon/copper alloy, titanium, titanium nitride, tungsten, polysilicon, metal silicide or combinations thereof.
It can be formed by the technique including PVD (PVD), chemical vapor deposition (CVD) or combinations thereof
Conductive component 122 and 124.Other manufacturing technologies for forming each conductive component 122 and 124 can include photoetching process and etching
With patterning conductive material, so as to form cross tie part vertically and horizontally.Other others can be implemented to form conductive component
Manufacturing process such as thermal annealing to form metal silicide.The metal silicide used in multilayer interconnection part can include silicon
Change nickel, cobalt silicide, tungsten silicide, tantalum silicide, titanium silicide, platinum silicide, silication erbium, palladium silicide or combinations thereof.
It should be understood that number, material, size and/or the size of described conductive component 122 and 124 be not to MLI parts
Limited, and therefore, according to the design requirement of IC-components precursor 100, MLI parts can include arbitrary number,
The conductive component of material, size and/or size.
The various conductive components 122 and 124 of MLI parts can be arranged on to interlayer (or between level) dielectric (ILD) layer 130
In.ILD layer 130 can include silica, silicon nitride, silicon oxynitride, TEOS oxide, phosphosilicate glass (PSG), boron phosphorus
Silicate glass (BPSG), fluorinated silica glass (FSG), carbon doped silicon oxide, noncrystal carbon fluoride, Parylene, polyimides,
Other suitable materials and/or combinations thereof.Forming the conventional method of ILD layer 130 includes thermal oxide, chemical vapor deposition
(CVD), high-density plasma CVD (HDP-CVD), PVD (PVD), ald (ALD), spin-on deposition
And/or other suitable depositing operations.ILD layer 130 can include the multilayer made of different dielectric material.
Fig. 2 is method 200 of the formation for the high k dielectric grid of IC-components according to various aspects of the invention
Flow chart.Fig. 3 to Fig. 4 and Fig. 5 to Fig. 6 is the section for the example IC devices 300 that multiple techniques are undergone according to Fig. 2 method
Figure.It should be understood that can before method, among, extra step is provided afterwards, and some described steps are in method
Other embodiment in can be replaced or delete.
Referring to Fig. 2 and Fig. 3, method 200 proceeds to step 202, there is provided IC device precursors 100, then proceedes to step
204, in the high k dielectric layer 140 of the disposed thereon of the back side 106 of substrate 102.In one embodiment, high k dielectric layer 140 is being deposited
Before, BARC (BARC) layer 135 is formed above the back side 106 of substrate 102.BARC layer 135 can include nitrogen
Compound material, organic material, oxide material etc..The suitable technology such as CVD, PVD can be used to form BARC layer 135.
High k dielectric layer 140 can include HfO2, HfSiO, HfSiON, HfTaO, HfTiO, HfZrO, zirconium oxide, oxidation
Aluminium, hafnium oxide-aluminum oxide (HfO2-Al2O3) alloy, other suitable high-k dielectric materials and/or combinations thereof.Can be with
High k dielectric layer 140 is deposited by CVD, PVD, ALD or other suitable methods and/or combinations thereof.In one embodiment
In, the thickness of high k dielectric layer 140 is in the range of 300nm to 600nm.
Referring to Fig. 2 and Fig. 4, method 200 proceeds to step 206, and a part of recessing to high k dielectric layer 140 is to form
High k dielectric grid 150.In the present embodiment, high k dielectric grid 150 includes high k dielectric groove 155 and side wall 156.High k dielectric
Groove 155 is formed in high k dielectric layer 140, and there is high k dielectric groove 155 remaining high k dielectric layer 140 to be used as its bottom.
That is, in the present embodiment, high k dielectric groove 155 does not extend fully through high k dielectric layer 140.Photoetching can be passed through
High k dielectric grid 150 is formed with etch process.For example, by spin coating, exposed and developed technique in high k dielectric layer 140 it is square
Into patterning photoresist layer.Then pass through the photoresist etching high K dielectric layer 140 of patterning.Etch process can include dry corrosion
Carving technology, wet etching process and/or combinations thereof.In the present embodiment, high k dielectric groove 155 and corresponding optical sensing area
Domain 110R, 110G and 110B alignment, and the height h of side wall 156 is in the range of 50nm to 200nm.
Furthermore, it is possible in the disposed thereon coating 157 of side wall 156 to be used as damp-proof layer.Coating 157 can include TaO,
ZrO, LaO, AlO or other suitable materials, and coating 157 can be formed by deposition, photoetching and etch process.One
In individual embodiment, the thickness of coating 157 is in 1nm between 5nm.
Referring to Fig. 2 and Fig. 5, method 200 proceeds to step 208, and colour filter 160 is formed above the back side 106 of substrate 102
With lenticule 170.In one embodiment, each colour filter 160 with corresponding photo-sensing area 110R, 110G and 110B
Alignment, and separated in the horizontal direction by side wall 156.In another embodiment, set in high k dielectric groove 155
Colour filter 160.Colour filter 160 is designed so that the light of predetermined wavelength passes through each colour filter.For example, photo-sensing area can be configured
110R is aligned with colour filter 160 so that the visible ray of red light wavelength is filtered to photo-sensing area 110R, can configure optical sensing area
Domain 110G is aligned with colour filter 160 so that the visible ray of green wavelength is filtered to photo-sensing area 110G, or can configure light sensation
Region 110B is surveyed to be aligned with colour filter 160 so that the visible ray of blue light wavelength is filtered to photo-sensing area 110B.Colour filter 160 wraps
Include any suitable material.In instances, colour filter 160 include be used for filter out special frequency band (for example, it is desirable to light ripple
It is long) (or based on pigment) polymer based on dyestuff.Alternatively, colour filter 160 can include the tree with color pigment
Fat or other organic materials.
It is arranged on the photo-sensing area corresponding to sensing element 110 of lenticule 170 of the top of the back side 106 of substrate 102
110R, 110G, 110B are aligned, and are separated in the horizontal direction by side wall 156.In one embodiment, by lenticule 170
It is arranged on the top of colour filter 160.Lenticule 170 can have various location arrangements with sensing element 110 and colour filter 160, with
Lenticule 170 is set to focus on the incident radiation of introducing to corresponding photo-sensing area 110R, 110G and 110B of sensing element 110.It is micro-
Lens 170 include suitable material, and the refractive index and/or lenticule and sensing element 110 of material are used according to lenticule
The distance between, lenticule 170 can have different shape and size.It is alternatively possible to reverse colour filter 160 and lenticule
The position of layer 170 so that lenticule 170 is arranged between the back side 106 of substrate 102 and colour filter 160.Present invention also contemplates that tool
There are the IC-components 300 for the color-filter layer being arranged between microlens layer.
The refractive index of high k dielectric grid 150, colour filter 160 and lenticule 170 is respectively n1、n2And n3.In an implementation
In example, the material of high k dielectric grid 150, colour filter 160 and lenticule 170 is selected to cause n1Less than n2And n3, so as to reduce/prevent
Only radiate through and reduce such as 110R, 110G and 110B different photo-sensing areas interference.
Referring to Fig. 6, in another embodiment, before colour filter 160 and lenticule 170 is formed, filled out with dielectric layer 158
Fill high k dielectric groove 155.In addition, using such as chemically-mechanicapolish polishing the rear etch process of (CMP) to remove unnecessary dielectric layer
158 and the top surface of planarized dielectric layer 158 it is flushed with the top surface of high k dielectric grid 150.Dielectric layer 158 can include oxygen
SiClx, silicon nitride or other suitable films.In one embodiment, the refractive index of dielectric layer 158 is much larger than high k dielectric grid
150 first refractive index.As shown in fig. 6, colour filter 160 and lenticule 170 are formed above dielectric layer 158.
In operation, IC-components 300 are designed as receiving to the forward radiation 112 in the back side 106 of substrate 102.It is micro-
Incident radiation 112 is oriented to corresponding colour filter 160 by lens 170.Then light passes through colour filter 160 to corresponding sensing element
110, specially corresponding photo-sensing area 110R, 110G and 110B.The front 104 of substrate 102 is covered in because light is not affected by
On various device components (for example, gate electrode) and/or metal parts (for example, conductive component 122 and 124 of MLI parts)
Hinder, thus through the light of colour filter 160 and sensing element 110 can be maximized.Carried by high k dielectric layer grid 150
The total reflection effect of confession, the light passed through are also maximized.As indicated above, high k dielectric grid 150 reduces integrated circuit device
Interfering in part 300.It is expected the light (such as feux rouges, green glow and blue light) of wavelength can allow more effectively to pass through sensing element
Corresponding photo-sensing area 110R, 110G and 110B of part 110.When being exposed to light, the photo-sensing area of sensing element 110
110R, 110G and 110B, which are produced and accumulated (collection), can be converted into the electronics of voltage signal.
Based on above description, the invention provides a kind of IC-components and its system using high k dielectric network
Make method.High k dielectric grid provide with high resistance to chemicals corrode and with structure of the other materials with preferable adhesive capacity.
By forming high k dielectric layer and one layer of grid so as to realize the formation of high k dielectric grid, it, which can be provided, reduces cost and simplification
The advantage of technique.High k dielectric grid presents the improvement to signal to noise ratio and quantum efficiency.
The invention provides a variety of different embodiments.For example, a kind of image sensing device includes having front and back
Substrate, and be arranged on multiple sensing elements of substrate face.Multiple sensing elements it is each it is operable with sensing projection to
The radiation of substrate back.Image sensing device also includes being arranged on the high k dielectric grid above substrate back.High k dielectric grid
Including the side wall formed with high k dielectric layer as the high k dielectric groove of its bottom and by a part for high k dielectric layer.Figure
As senser element also includes being arranged on the colour filter and lenticule above high k dielectric grid.
In another embodiment, a kind of device includes the substrate with front and back, is arranged on the positive of substrate
Multiple sensing elements.Multiple sensing elements are operable with radiation of the sensing projection to substrate back.The device also includes being arranged on
The multiple colour filters and lenticule being aligned above substrate back and with corresponding sensing element.The device also includes being arranged on substrate
The high k dielectric grid of back side.In multiple colour filters and lenticule it is each by high k dielectric grid in the horizontal direction that
This is separated.High k dielectric grid has one as the high k dielectric groove of its bottom and by high k dielectric layer of high k dielectric layer
Divide the side wall formed.
In yet another embodiment, a kind of method for manufacturing device includes providing the substrate with front and back.Serving as a contrast
Multiple sensing elements, and each operable spoke with sensing projection to substrate back of multiple sensing elements are set at the front at bottom
Penetrate.The disposed thereon that this method is additionally included in substrate back has the high k dielectric layer of first refractive index, removes high k dielectric layer
A part forms colour filter and lenticule to form high k dielectric layer grid above high k dielectric grid.
The part of multiple embodiments is probably discussed above so that this may be better understood in those of ordinary skill in the art
The various aspects of invention.It will be understood by those skilled in the art that easily it can be set using based on the present invention
Count or change other be used for perform and embodiment identical purpose defined herein and/or realize processing and the knot of same advantage
Structure.Those of ordinary skill in the art should also be appreciated that this equivalent constructions without departing from the spirit and scope of the present invention, and
Without departing from the spirit and scope of the present invention, a variety of changes can be carried out herein, are replaced and are changed.
Claims (13)
1. a kind of image sensing device, including：
Substrate, there is front and back；
Multiple sensing elements, be arranged at the back side of the substrate, the multiple sensing element each of it is operable with
Radiation of the sensing projection to the back side of the substrate；
High k dielectric grid, is arranged on the back side of the substrate, and the high k dielectric grid includes：
High k dielectric groove, there is the high k dielectric layer as its lower surface；With
Side wall, formed by a part for the high k dielectric layer；
Colour filter, it is arranged in the high k dielectric groove so that the upper surface of the colour filter is set above the high k and is situated between
The upper surface of electric groove, and the lower surface of the colour filter is arranged in the lower surface of the high k dielectric groove, wherein,
The upper surface of the colour filter is arranged to the lower surface than the colour filter away from the substrate；And
Lenticule, it is arranged on above the high k dielectric grid,
Coating, it is arranged on above the upper surface and the side wall of the high k dielectric grid to be used as damp-proof layer
Wherein, the lenticule is separated by the coating above the side wall and the side wall in the horizontal direction.
2. image sensing device according to claim 1, wherein, the high k dielectric groove and corresponding sensing element pair
It is accurate.
3. image sensing device according to claim 2, wherein, the colour filter and corresponding high k dielectric trough aligned.
4. image sensing device according to claim 2, wherein, the lenticule and corresponding high k dielectric trough aligned.
5. image sensing device according to claim 1, wherein, the high k dielectric grid, the colour filter and described micro-
Lens are made up of the material with different refractivity.
6. image sensing device according to claim 5, wherein, the refractive index of the high k dielectric grid is less than the filter
The refractive index of color device and the lenticule.
7. a kind of image sensing device, including：
Substrate, there is front and back；
Multiple sensing elements, it is arranged at the back side of the substrate, the multiple sensing element is operable to be projected with sensing
Radiation to the back side of the substrate；
Multiple colour filters and lenticule, it is arranged on the back side of the substrate and is aligned with corresponding sensing element；And
High k dielectric grid, it is arranged on the back side of the substrate so that each equal in the multiple colour filter and lenticule
It is separated from one another in the horizontal direction by high k dielectric grid, wherein, the high k dielectric grid includes：
High k dielectric groove, there is the high k dielectric layer as its base section, the high k dielectric layer and the bottom surface of the colour filter
Directly contact；With
Side wall, formed by a part for the high k dielectric layer；
Wherein, the colour filter is arranged in the high k dielectric groove so that the upper surface of the colour filter is positioned as than described
The upper surface of high k dielectric groove more adjacent to the lenticule,
Coating, it is arranged on above the upper surface and the side wall of the high k dielectric grid using as damp-proof layer,
Wherein, the lenticule is separated by the coating above the side wall and the side wall in the horizontal direction.
8. image sensing device according to claim 7, wherein, the lenticule is arranged on the high k dielectric groove
Side.
9. image sensing device according to claim 7, wherein, the refractive index of the high k dielectric grid is less than the filter
The refractive index of color device and the lenticule.
10. image sensing device according to claim 7, further comprises：
Dielectric layer, it is arranged between the colour filter and the high k dielectric groove.
11. a kind of method for forming image sensing device, including：
Substrate with front and back is provided, wherein, multiple sensing elements are arranged on the back side of the substrate, described more
Each in individual sensing element is operable with radiation of the sensing projection to the back side of the substrate；
High k dielectric layer is deposited in the back side of the substrate；
The part of the high k dielectric layer is removed to form the high k dielectric grid with high k dielectric groove；
Coating is formed above the upper surface of the high k dielectric grid and side wall to be used as damp-proof layer；And
Colour filter and lenticule are formed above the high k dielectric grid, wherein, form the colour filter and be included in the high k
The colour filter is formed in dielectric trench so that the top surface of the colour filter is formed as the top surface higher than the high k dielectric groove,
And the bottom surface of the colour filter is formed as on the bottom surface of the high k dielectric groove,
Wherein, the lenticule is separated by the coating above the side wall and side wall in the horizontal direction.
12. the method according to claim 11 for forming image sensing device, wherein, form the high k dielectric net
Lattice include：
Patterning photoresist layer is formed above the high k dielectric layer；And
Through the part for patterning the photoresist layer etching high k dielectric layer to form high k dielectric groove and side wall, its
In, remaining high k dielectric layer forms the bottom surface of the high k dielectric groove.
13. the method according to claim 11 for forming image sensing device, further comprise：
Deposited bottom antireflection is coated with (BARC) layer between the substrate and the high k dielectric layer.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361799934P | 2013-03-15 | 2013-03-15 | |
| US61/799,934 | 2013-03-15 | ||
| US13/911,277 | 2013-06-06 | ||
| US13/911,277 US9601535B2 (en) | 2013-03-15 | 2013-06-06 | Semiconducator image sensor having color filters formed over a high-K dielectric grid |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104051479A CN104051479A (en) | 2014-09-17 |
| CN104051479B true CN104051479B (en) | 2018-01-26 |
Family
ID=51504114
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310451790.0A Active CN104051479B (en) | 2013-03-15 | 2013-09-25 | High k dielectric network for semiconductor devices |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104051479B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102018124442A1 (en) | 2017-11-15 | 2019-05-16 | Taiwan Semiconductor Manufacturing Co. Ltd. | Polarizers for image sensor devices |
| US10367020B2 (en) * | 2017-11-15 | 2019-07-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Polarizers for image sensor devices |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1992313A (en) * | 2005-12-28 | 2007-07-04 | 东部电子股份有限公司 | Image sensor and method of manufacturing the same |
| CN101853812A (en) * | 2009-03-30 | 2010-10-06 | 台湾积体电路制造股份有限公司 | Image sensor and method of fabricating same |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100884977B1 (en) * | 2007-10-18 | 2009-02-23 | 주식회사 동부하이텍 | Cmos image sensor and method for manufacturing the same |
| KR101545528B1 (en) * | 2008-12-29 | 2015-08-19 | 아이아이아이 홀딩스 4, 엘엘씨 | Back Side Illumination Image Sensor and Method for Manufacturing the same |
| US9093579B2 (en) * | 2011-04-28 | 2015-07-28 | Semiconductor Components Industries, Llc | Dielectric barriers for pixel arrays |
-
2013
- 2013-09-25 CN CN201310451790.0A patent/CN104051479B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1992313A (en) * | 2005-12-28 | 2007-07-04 | 东部电子股份有限公司 | Image sensor and method of manufacturing the same |
| CN101853812A (en) * | 2009-03-30 | 2010-10-06 | 台湾积体电路制造股份有限公司 | Image sensor and method of fabricating same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104051479A (en) | 2014-09-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109585466B (en) | CMOS image sensor and method for forming the same | |
| KR102175614B1 (en) | Cmos image sensor having indented photodiode structure | |
| CN103378116B (en) | For the anti-reflecting layer of back side illumination image sensor | |
| US9768214B2 (en) | Structure of dielectric grid for a semiconductor device | |
| CN104051478B (en) | Backside structure for a BSI image sensor device | |
| US9130077B2 (en) | Structure of dielectric grid with a metal pillar for semiconductor device | |
| KR20200035821A (en) | Pixel device on deep trench isolation (dti) structure for image sensor | |
| US20210151479A1 (en) | Semiconductor device with a radiation sensing region and method for forming the same | |
| TWI685093B (en) | Image sensor, semiconductor image sensor, and method of manufacturing semiconductor image sensor | |
| US20210335861A1 (en) | Back-side deep trench isolation structure for image sensor | |
| TWI724073B (en) | Semiconductor image sensor device and forming method thereof | |
| KR102287553B1 (en) | Image sensor device structure with doping layer in light-sensing region | |
| US9153620B2 (en) | Method of fabricating a metal grid for semiconductor device | |
| CN101281917A (en) | Integrated circuit | |
| US9601535B2 (en) | Semiconducator image sensor having color filters formed over a high-K dielectric grid | |
| CN103489883B (en) | Image device and forming method thereof | |
| TWI817161B (en) | Image sensor, semiconductor device and manufacturing method thereof | |
| TWI624906B (en) | High dielectric constant dielectric layer forming method, image sensor device, and manufacturing method thereof | |
| US8951826B2 (en) | Method for increasing photodiode full well capacity | |
| CN104051479B (en) | High k dielectric network for semiconductor devices | |
| US9356060B2 (en) | Image sensor device and method | |
| TW201530750A (en) | Method of modifying polysilicon layer through nitrogen incorporation | |
| TW202238973A (en) | Image sensor and method of forming the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |