CN104049804A - Touch screen network type electrode and manufacturing method thereof - Google Patents
Touch screen network type electrode and manufacturing method thereof Download PDFInfo
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- CN104049804A CN104049804A CN201410269865.8A CN201410269865A CN104049804A CN 104049804 A CN104049804 A CN 104049804A CN 201410269865 A CN201410269865 A CN 201410269865A CN 104049804 A CN104049804 A CN 104049804A
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- fluorine
- tin oxide
- indium tin
- oxide target
- type electrode
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- 238000004519 manufacturing process Methods 0.000 title abstract description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 104
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 76
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims abstract description 52
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 38
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052737 gold Inorganic materials 0.000 claims abstract description 22
- 239000010931 gold Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000000126 substance Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- 238000007747 plating Methods 0.000 claims description 12
- 238000001259 photo etching Methods 0.000 claims description 5
- 238000004381 surface treatment Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004049 embossing Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 210000000981 epithelium Anatomy 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 150000002940 palladium Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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Abstract
The invention discloses a touch screen network type electrode and a manufacturing method thereof. The touch screen network type electrode comprises a transparent substrate, an indium tin oxide or fluorine-mixed tin dioxide layer, a nickel layer and a gold layer; the indium tin oxide or fluorine-mixed tin dioxide layer, the nickel layer and the gold layer are same in shape and are overlapped together; the indium tin oxide or fluorine-mixed tin dioxide layer is positioned on a first surface of the substrate; the nickel layer is positioned on the indium tin oxide or fluorine-mixed tin dioxide layer; the gold layer is positioned on the nickel layer. The indium tin oxide or fluorine-mixed tin dioxide layer, the nickel layer and the gold layer are random oval or polygonal and randomly connected network-shaped. The aim that the indium tin oxide or fluorine-mixed tin dioxide layer-based network type electrode is manufactured on a touch screen is realized, and the touch screen network type electrode has the characteristics of higher manufacturability, reliability, economy and the like.
Description
Technical field
The present invention relates to touch-screen, relate in particular to a kind of touch-screen grid type electrode and preparation method thereof.
Background technology
Indium tin oxide target or fluorine-doped tin dioxide are in the time of filminess, and the characteristic such as electricity conduction and optical clear having is widely used it in touch-screen field.
Along with market constantly increases the demand of large scale touch-screen, researchist starts to consider how to reduce or offset the negative consequence that increases the electrode resistance increase bringing because of screen size.One of method is to adjust the ratio of tin in indium tin oxide target or fluorine-doped tin dioxide, but resize ratio can not deal with problems completely, in reducing resistivity, transmittance has also declined conventionally, when light transmission strengthens, resistivity has risen again.
Therefore researchist has turned to research emphasis with metal grill replacement indium tin oxide target or fluorine-doped tin dioxide, specific practice is directly the metal materials such as silver, aluminium or copper to be adopted to silk screen printing process, comprise embossing plate technology, and the mode of volume to volume is produced on transparent substrate.
In order to ensure the transmittance of grid type electrode, must lighttight metal wire be done very carefully, such as being less than 5 microns.Traditional silk screen printing process, comprises embossing plate technology, and the production method of volume to volume cannot meet such requirement, and too tiny metal live width sharply declines the yields of traditional handicraft.
And on the other hand, the metal material that can be used in Photolithography Technology is more expensive, and the lithographic equipment in existing touch screen field is also difficult to realize tiny metal live width, and has the problem of the not good and oxidation of adhesion.
Therefore, those skilled in the art is devoted to develop a kind of touch-screen grid type electrode and preparation method thereof, makes it have low resistivity simultaneously, higher light transmittance, and manufacturing process yields is high, and performance reliability is high, and material is more cheap, good economy performance.
Summary of the invention
Because the above-mentioned defect of prior art, technical matters to be solved by this invention is to provide a kind of touch-screen and good economy performance, metal grill that reliability is high of can be applicable to.
For achieving the above object, the invention provides a kind of touch-screen grid type electrode, comprise transparency carrier, indium tin oxide target or fluorine-doped tin dioxide layer, nickel dam and gold layer, indium tin oxide target or fluorine-doped tin dioxide layer, nickel dam is identical with the shape of gold layer, vertically be superimposed, wherein indium tin oxide target or fluorine-doped tin dioxide layer are positioned on the first surface of substrate, nickel dam is positioned on indium tin oxide target or fluorine-doped tin dioxide layer, gold layer is positioned on nickel dam, indium tin oxide target or fluorine-doped tin dioxide layer, nickel dam and gold layer to have shape be the mesh shape that a kind of circle or polygon are connected.
Further, described circle or polygonal mesh are random being connected, and size is also random.
Further, substrate thickness is 20-2000 micron.
Further, indium tin oxide target or fluorine-doped tin dioxide layer thickness are that 2-80 nanometer, width are less than 12 microns.
Further, nickel layer thickness is 10 nanometers to 1.5 micron.
Further, golden layer thickness is 2-80 nanometer.
Further, grid type electrode random being connected on the first surface of substrate distributes, and is covered with the tangible region of whole touch-screen.
Further, indium tin oxide target or fluorine-doped tin dioxide layer dutycycle are less than 20%, and dutycycle refers to and on the first surface of substrate, has the region area of described indium tin oxide target or fluorine-doped tin dioxide layer and do not have described indium tin oxide target or the ratio of the region area of fluorine-doped tin dioxide layer.
The present invention also provides a kind of method for making of touch-screen grid type electrode, for making described touch-screen grid type electrode, comprising:
The first step deposits described indium tin oxide target or fluorine-doped tin dioxide layer on described substrate;
Second step, adopts photoetching process, etches described circle or the connected mesh shape of polygon on described indium tin oxide target or fluorine-doped tin dioxide layer;
The 3rd step, carries out, after surface treatment, carrying out chemical nickel plating to the described grid etching;
The 4th step, carries out chemical gilding to described nickel plating grid.
Resistance through the produced touch-screen grid type of above-mentioned processing step electrode is determined by gold layer substantially, and gold is the conductor that electric conductivity is very excellent.Thereby this metal grill can be applied to touch-screen and make, large-sized touch-screen in comprising.In addition, the sputter that the present invention uses, photoetching, chemical nickel plating, chemical gilding is all maturation process, can batch jobs, production efficiency is high, and yields is high.In addition, owing to only having the ground gold-plated and nickel just now of grid, gold used and the specific consumption of nickel are very small, are conducive to save production cost.
Below with reference to accompanying drawing, the technique effect of design of the present invention, concrete structure and generation is described further, to understand fully object of the present invention, feature and effect.
Brief description of the drawings
Fig. 1 is the longitudinal sectional drawing of a preferred embodiment of the present invention
Fig. 2 is the planimetric map of a preferred embodiment of the present invention
Embodiment
In preferred embodiments of the present invention, as Fig. 1, touch-screen grid type electrode is by transparency carrier 100, indium tin oxide target or fluorine-doped tin dioxide layer 101, nickel dam 102 and gold layer 103 composition.Described indium tin oxide target or fluorine-doped tin dioxide layer are positioned on described transparency carrier first surface, described nickel dam is positioned on described indium tin oxide target or fluorine-doped tin dioxide layer, described gold layer is positioned on described nickel dam, from Vertical Square always, described indium tin oxide target or fluorine-doped tin dioxide layer, together with described nickel dam overlaps with described gold layer, described indium tin oxide target or fluorine-doped tin dioxide layer, described nickel dam has formed an effigurate grid being connected of tool with described gold layer, described definite shape can be the polygon in Fig. 2, can be also circular.Connected grid has like this formed the induction electrode of touch-screen.Effectively reduce the overall resistivity of grid type electrode by additional making nickel dam and gold layer on the circle at guarantee transmittance or polygon indium tin oxide target or fluorine-doped tin dioxide grid type electrode, solve the in the situation that of large scale touch-screen, grid type electrode resistance is excessive, affects touch-screen and obtains the problem of finger contact position.
Above, the embodiment of the connected grid to definite shape of the present invention is illustrated.But the embodiment of the connected grid of definite shape of the present invention is not limited to aforesaid way.The mode of the various distortion that also can carry out with those skilled in the art, the mode of improvement are implemented.
As shown in Figure 1, the method for making of the touch-screen grid type electrode in the present embodiment is as follows,
The first step is used the mode of low-voltage direct magnetron sputtering to deposit one deck indium tin oxide target or fluorine-doped tin dioxide on transparency carrier, forms the conductive film of layer of transparent.The mode of described low-voltage direct magnetron sputtering refers in hypobaric, use DC voltage to excite lotus energy particle bombardment indium tin oxide target or fluorine-doped tin dioxide target material surface, the indium tin oxide target being pounded or fluorine-doped tin dioxide particle are deposited on described transparency carrier first surface under the control in magnetic field.
Second step, makes the mask identical with described shape grid, uses photoetching process, produces indium tin oxide target or the fluorine-doped tin dioxide grid of described shape on described transparent conductive film.Described photoetching process refers to utilizes mask and photoresist, by expose be developed in photoresist layer on portray the figure identical with mask, then by etching technics, the geometric figure on mask is transferred on indium tin oxide target or fluorine-doped tin dioxide thin layer.
The 3rd step, carries out, after surface treatment, carrying out chemical nickel plating to the indium tin oxide target forming in second step or fluorine-doped tin dioxide grid.
Described surface treatment comprise following some:
First, substrate is immersed to standard acidic solution together with being arranged in indium tin oxide target above or fluorine-doped tin dioxide grid, time 3-8 minute, temperature 18-45 DEG C, then uses deionized water rinsing 1-5 minute, and staining of adhering on surface mesh removed.
Secondly, by substrate, together with being arranged in indium tin oxide target above or fluorine-doped tin dioxide grid, to put into acidic etchant be that 20-60mL/L etching solution carries out dip treating, temperature 20-45 DEG C, time 2-8 minute, then use deionized water rinsing 1-5 minute, make indium tin oxide target or the trickle alligatoring of fluorine-doped tin dioxide surface mesh.
Again, substrate is placed in to the palladium salt that concentration is 0.05-0.5mol/L together with the indium tin oxide target or the fluorine-doped tin dioxide grid that are positioned at above, and concentration is in 1-2mL/L potassium hydroxide solution, to carry out dip treating, temperature 20-45 DEG C, time 2-8 minute, then uses deionized water rinsing 1-5 minute.
Finally, by substrate, together with being arranged in indium tin oxide target above or fluorine-doped tin dioxide grid, to be placed in concentration be that the activator solution of 5-15ml/L carries out dip treating, temperature 20-45 DEG C, and time 2-8 minute, then uses deionized water rinsing 1-5 minute.
Described chemical nickel plating refer to by the substrate after surface treatment together be arranged in indium tin oxide target above or fluorine-doped tin dioxide grid be placed in metallic stabilizer for lead, pH:1-6, temperature be 40-90 DEG C, epithelium stress be less than ± 0.2 carry out chemical nickel plating without sodium plating bath.
The 4th step, in the 3rd step, the indium tin oxide target of nickel plating or fluorine-doped tin dioxide grid carry out chemical gilding.Described chemical gilding refers to that nickel and golden displacement reaction plate a gold medal layer on nickel dam, by the substrate of chemical nickel plating together with being positioned at indium tin oxide target above or fluorine-doped tin dioxide grid after deionization washing in two minutes, chemical gilding is carried out in the prussiate plating bath that is placed in pH:1-6, temperature: 40-90 DEG C, then uses deionized water rinsing 1-5 minute.
More than describe preferred embodiment of the present invention in detail.Should be appreciated that those of ordinary skill in the art just can design according to the present invention make many modifications and variations without creative work.Therefore, all technician in the art, all should be in by the determined protection domain of claims under this invention's idea on the basis of existing technology by the available technical scheme of logical analysis, reasoning, or a limited experiment.
Claims (9)
1. a touch-screen grid type electrode, it is characterized in that, comprise transparency carrier, indium tin oxide target or fluorine-doped tin dioxide layer, nickel dam and gold layer, described indium tin oxide target or fluorine-doped tin dioxide layer, described nickel dam is identical with the shape of described gold layer, overlap together, wherein said indium tin oxide target or fluorine-doped tin dioxide layer are positioned on the first surface of described substrate, described nickel dam is positioned on described indium tin oxide target or fluorine-doped tin dioxide layer, described gold layer is positioned on described nickel dam, described indium tin oxide target or fluorine-doped tin dioxide layer, described nickel dam and described gold layer are mesh shapes, described mesh shape refers to connected circle or polygon.
2. touch-screen grid type electrode as claimed in claim 1, is characterized in that, described circle or polygonal mesh are random being connected, and size is also random.
3. touch-screen grid type electrode as claimed in claim 1, is characterized in that, described substrate thickness is 20-2000 micron.
4. touch-screen grid type electrode as claimed in claim 1, is characterized in that, described indium tin oxide target or fluorine-doped tin dioxide layer thickness are that 2-80 nanometer, width are less than 12 microns.
5. touch-screen grid type electrode as claimed in claim 1, is characterized in that, described nickel layer thickness is 10 nanometers to 1.5 micron.
6. touch-screen grid type electrode as claimed in claim 1, is characterized in that, described golden layer thickness is 2-80 nanometer.
7. touch-screen grid type electrode as claimed in claim 1, is characterized in that, the distribution that is connected at random on the first surface of substrate of described indium tin oxide target or fluorine-doped tin dioxide layer, described nickel dam and described gold layer is covered with the tangible region of whole touch-screen.
8. touch-screen grid type electrode as claimed in claim 1, it is characterized in that, described indium tin oxide target or fluorine-doped tin dioxide layer dutycycle are less than 20%, and dutycycle refers to and on the first surface of substrate, has the region area of described indium tin oxide target or fluorine-doped tin dioxide layer and do not have described indium tin oxide target or the ratio of the region area of fluorine-doped tin dioxide layer.
9. a method for making for touch-screen grid type electrode, for making the touch-screen grid type electrode as described in any one claim of claim 1-7, is characterized in that, comprising:
The first step deposits described indium tin oxide target or fluorine-doped tin dioxide layer on described substrate;
Second step, adopts photoetching process, on described indium tin oxide target or fluorine-doped tin dioxide layer, etches described circle
Or the connected mesh shape of polygon;
The 3rd step, carries out, after surface treatment, carrying out chemical nickel plating to the described grid etching;
The 4th step, carries out chemical gilding to described nickel plating grid.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410269865.8A CN104049804B (en) | 2014-06-17 | 2014-06-17 | A kind of touch-screen grid type electrode and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410269865.8A CN104049804B (en) | 2014-06-17 | 2014-06-17 | A kind of touch-screen grid type electrode and preparation method thereof |
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| Publication Number | Publication Date |
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| CN104049804A true CN104049804A (en) | 2014-09-17 |
| CN104049804B CN104049804B (en) | 2017-08-25 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106251944A (en) * | 2015-06-11 | 2016-12-21 | 株式会社理光 | Conductive pattern forms base plate and bottom plate making process |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102903423A (en) * | 2012-10-25 | 2013-01-30 | 南昌欧菲光科技有限公司 | Conduction structure in transparent conduction film, transparent conduction film and manufacture method thereof |
| CN103474133A (en) * | 2013-09-26 | 2013-12-25 | 苏州胜利光学玻璃有限公司 | Transparent electric conduction film |
| CN203414931U (en) * | 2013-07-17 | 2014-01-29 | 胜华科技股份有限公司 | Touch control panel |
-
2014
- 2014-06-17 CN CN201410269865.8A patent/CN104049804B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102903423A (en) * | 2012-10-25 | 2013-01-30 | 南昌欧菲光科技有限公司 | Conduction structure in transparent conduction film, transparent conduction film and manufacture method thereof |
| CN203414931U (en) * | 2013-07-17 | 2014-01-29 | 胜华科技股份有限公司 | Touch control panel |
| CN103474133A (en) * | 2013-09-26 | 2013-12-25 | 苏州胜利光学玻璃有限公司 | Transparent electric conduction film |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106251944A (en) * | 2015-06-11 | 2016-12-21 | 株式会社理光 | Conductive pattern forms base plate and bottom plate making process |
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| CN104049804B (en) | 2017-08-25 |
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