CN104047057B - A kind of semi-insulating inp crystal growth preparation formula - Google Patents
A kind of semi-insulating inp crystal growth preparation formula Download PDFInfo
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- CN104047057B CN104047057B CN201310079877.XA CN201310079877A CN104047057B CN 104047057 B CN104047057 B CN 104047057B CN 201310079877 A CN201310079877 A CN 201310079877A CN 104047057 B CN104047057 B CN 104047057B
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- Prior art keywords
- inp
- semi
- diboron trioxide
- crystal growth
- purity
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- 239000013078 crystal Substances 0.000 title claims abstract description 15
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims abstract description 28
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 18
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052742 iron Inorganic materials 0.000 claims abstract description 11
- 239000002994 raw material Substances 0.000 claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 claims abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 2
- 230000018044 dehydration Effects 0.000 claims description 2
- 238000006297 dehydration reaction Methods 0.000 claims description 2
- 239000008367 deionised water Substances 0.000 claims description 2
- 229910021641 deionized water Inorganic materials 0.000 claims description 2
- 230000005693 optoelectronics Effects 0.000 claims description 2
- 230000006641 stabilisation Effects 0.000 abstract description 3
- 238000011105 stabilization Methods 0.000 abstract description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 26
- 239000000126 substance Substances 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Abstract
The present invention relates to a kind of semi-insulating inp crystal growth preparations to be formulated, which is formed by raw material weight percentage are as follows: InP polycrystal material 97.00~98.50%, diboron trioxide 0.75~1.50%, red phosphorus 1.00~1.50%, iron 0.02~0.03%.The present invention can obtain high quality, major diameter InP monocrystalline, and high production efficiency, at the same the uniform stabilization of the performance on chip and the service life it is long,<100>the InP monocrystalline and single-chip prepared is by testing its resistivity 107Ω cm or more.
Description
Technical field:
The invention belongs to semiconductor material preparation fields, and in particular to a kind of semi-insulating inp crystal growth preparation is matched
Side.
Background technique
Indium phosphide (InP) is important one of III-V compound semiconductor material, is new after silicon, GaAs
Generation electronic functional material.Compared with GaAs (GaAs), superiority essentially consists in high saturation electric field drift velocity, thermally conductive
Property good and stronger capability of resistance to radiation etc., therefore InP chip manufactures commonly used in novel microelectronic, photoelectron element.
InP monocrystal material is mainly divided by electrical properties mixes sulphur N-type InP；Mix zinc p-type InP；It mixes iron or undoped annealing half is exhausted
Edge InP monocrystalline.N-shaped InP monocrystalline is used for photoelectric device, long wavelength (1.3-1.55 μm) light emitting diode of InP-base, laser and
Detector has been used for optical fiber telecommunications system.High speed, high frequency, broadband, low noise microwave, milli can be made in semi-insulating InP substrate
Metric wave electronic device.
The fusing point of InP is 1062 DEG C, is lower than GaAs.But dissociation pressure (25~27.5atm) of the P at fusing point is very high.By
Yu Qigao dissociation pressure, so that In and P are difficult to as Ga and As the direct synthesised polycrystalline in single crystal growing furnace.It therefore, generally will be in height
The pressure interior high purity indium of furnace and high-purity red phosphorus synthesize InP polycrystal material first, then carry out crystal growth work again.
As other semiconductor materials, InP material is difficult to avoid that thermal stress effect, stoicheiometry during the growth process
Deviation, component segregation, impurity contamination etc., thereby result in the generation of defect and the destruction of perfection of lattice.To avoid defect, improve
Material integrity and electrical properties, and then photoelectron and microelectronic component Performance And Reliability are improved, need strict control chemical
Proportion.
Summary of the invention
According to above situation, the purpose of the present invention is to provide a kind of semi-insulating inp crystal growth preparations to be formulated, by
The InP substrate that the InP crystal that the formula generates obtains is for low noise and wideband microwave device, terminal guidance and anti-interference millimeter wave
Device and integrated optoelectronic circuit.
The technical scheme is that being realized by following measures: a kind of semi-insulating inp crystal growth preparation is matched
Side, it is characterised in that formed by raw material weight percentage are as follows: InP polycrystal material 97.00~98.50%, diboron trioxide 0.75~
1.50%, red phosphorus 1.00~1.50%, iron 0.02~0.03%.
The InP polycrystal material repeatedly boils cleaning through deionized water, to remove the oxide and residual impurity on surface, it is ensured that
Degree of purity needed for experiment.
The diboron trioxide is high-purity dehydration diboron trioxide, and dewatered diboron trioxide water content generally exists
500ppm magnitude.
The red phosphorus reaches 6N degree of purity.
The iron reaches 6N degree of purity.
According to above-mentioned formula provided by the invention, high quality, major diameter InP monocrystalline, and high production efficiency can be obtained, together
When chip on the uniform stabilization of performance and the service life it is long.
Specific embodiment
Semi-insulating inp crystal growth preparation formula is formed by raw material weight percentage: InP polycrystal material 97.00~
98.50%, diboron trioxide 0.75~1.50%, red phosphorus 1.00~1.50%, iron 0.02~0.03%.
According to above-mentioned formula provided by the invention, high quality, major diameter InP monocrystalline, and high production efficiency can be obtained, together
When chip on the uniform stabilization of performance and the service life it is long.
Embodiment 1, semi-insulating inp crystal growth preparation formula are made of following raw material weight percentage: InP is more
Crystalline substance material 97.06%, diboron trioxide 1.46%, red phosphorus 1.46%, iron 0.02%.
<100>InP monocrystalline and single-chip that embodiment 1 is prepared are by testing its resistivity 5.6 × 107Ω·
cm。
Embodiment 2, semi-insulating inp crystal growth preparation formula are made of following raw material weight percentage: InP is more
Crystalline substance material 98.10%, diboron trioxide 0.78%, red phosphorus 1.09%, iron 0.03%.
<100>InP monocrystalline and single-chip that embodiment 2 is prepared are by testing its resistivity 6.8 × 107Ω·
cm。
Embodiment 3, semi-insulating inp crystal growth preparation formula are made of following raw material weight percentage: InP is more
Crystalline substance material 97.50%, diboron trioxide 0.98%, red phosphorus 1.50%, iron 0.02%.
<100>InP monocrystalline and single-chip that embodiment 3 is prepared are by testing its resistivity 1.2 × 108Ω·
cm。
Embodiment 4, semi-insulating inp crystal growth preparation formula are made of following raw material weight percentage: InP is more
Crystalline substance material 98.22%, diboron trioxide 0.75%, red phosphorus 1.00%, iron 0.03%.
<100>InP monocrystalline and single-chip that embodiment 4 is prepared are by testing its resistivity 9.6 × 107Ω·
cm。
Claims (1)
1. a kind of semi-insulating inp crystal growth preparation method is suitable for production for low noise and wideband microwave device, end
The InP substrate of guidance and anti-interference millimetric wave device and integrated optoelectronic circuit, which is characterized in that formed by raw material weight percentage
Are as follows: InP polycrystal material 97.00~98.22%, diboron trioxide 0.75~1.50%, red phosphorus 1.00~1.50%, iron 0.02~
0.03%；The InP polycrystal material repeatedly boils cleaning through deionized water, to remove the oxide and residual impurity on surface；It is described
Diboron trioxide is high-purity dehydration diboron trioxide, and dewatered diboron trioxide water content is generally in 500ppm magnitude；It is described
Red phosphorus reaches 6N degree of purity；The iron reaches 6N degree of purity.
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| CN201310079877.XA CN104047057B (en) | 2013-03-12 | 2013-03-12 | A kind of semi-insulating inp crystal growth preparation formula |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310079877.XA CN104047057B (en) | 2013-03-12 | 2013-03-12 | A kind of semi-insulating inp crystal growth preparation formula |
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| Publication Number | Publication Date |
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| CN104047057A CN104047057A (en) | 2014-09-17 |
| CN104047057B true CN104047057B (en) | 2019-04-02 |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115424921B (en) * | 2022-11-07 | 2023-03-24 | 苏州长光华芯光电技术股份有限公司 | Method for growing semi-insulating iron-doped InP epitaxial layer |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1499587A (en) * | 2002-11-11 | 2004-05-26 | 中国科学院半导体研究所 | Method for preparing half insulated substrate by using non-adulterated indium phosphide through high temperature annealing |
-
2013
- 2013-03-12 CN CN201310079877.XA patent/CN104047057B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1499587A (en) * | 2002-11-11 | 2004-05-26 | 中国科学院半导体研究所 | Method for preparing half insulated substrate by using non-adulterated indium phosphide through high temperature annealing |
Non-Patent Citations (1)
| Title |
|---|
| 富磷熔体中生长的Φ100mm掺硫InP单晶研究;周晓龙等;《固体电子学研究与进展》;20040229;第134-137页 |
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| CN104047057A (en) | 2014-09-17 |
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Effective date of registration: 20240415 Address after: 529000, Building 9, No. 6 Jianda South Road, Pengjiang District, Jiangmen City, Guangdong Province Patentee after: Jiangmen Xinyi Crystal Technology Co.,Ltd. Country or region after: China Address before: 529341 No. 61 Shihua Road, Taicheng, Taishan City, Guangdong Province Patentee before: TAISHAN HUAXING PHOTOELECTRIC TECHNOLOGY CO.,LTD. Country or region before: China |