CN104047039A - Process of plating multilayered nickel by single-bath method of crystal oscillating cover plate and application of process - Google Patents
Process of plating multilayered nickel by single-bath method of crystal oscillating cover plate and application of process Download PDFInfo
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- CN104047039A CN104047039A CN201410296419.6A CN201410296419A CN104047039A CN 104047039 A CN104047039 A CN 104047039A CN 201410296419 A CN201410296419 A CN 201410296419A CN 104047039 A CN104047039 A CN 104047039A
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Abstract
The invention discloses a process of plating multilayered nickel by a single-bath method of a crystal oscillating cover plate. The process comprises the following steps: by adopting multi-waveform electroplating power supplies, conveying the power supplies with different current waveforms and current densities to an electroplating bath by adjusting the current waveforms and current densities of the multi-waveform electroplating power supplies; and plating nickel in multiple layers by a same nickel plating liquid in the same electroplating bath according to different degrees of crystallization of crystalline grains and different thicknesses of the plating layers. The process is simple, cost-saving and controllable and good in electroplating quality. The process has great superiority in uniformity, corrosion resistance, hardness, weldability, magnetism and decorativeness.
Description
Technical field
The present invention relates to a kind of nickel plating technology, is a kind of crystal oscillator cover plate multi-layer nickel-plating process by adopting single bath process specifically, and specifically electronics is electroplated with the MULTI-LAYER NICKEL of anticorrosion plating and applied.
Background technology
When electronic devices and components and the nickel plating of general industry metallic element, in order to improve its antiseptic power, domestic and international general employing three-pit system is equipped with three kinds of different nickel-plating liquids and different current densities obtains three layers of nickel layer that sulphur content is different, utilize its sulphur content difference, the different principle of corrosion electrode potential improves the antiseptic power of metalwork.Many equipment, many nickel-plating liquids complex process, electroplating cost are high, and electroplating technology is wayward, and electroplating quality is poor.
Summary of the invention
For the not group of the nickel plating technology of many equipment, many nickel-plating liquids in prior art, the invention provides that a kind of technique is simple, cost-saving, electroplating quality is controlled and matter measured crystal oscillator cover plate multi-layer nickel-plating process by adopting single bath process and application thereof.
The technical solution used in the present invention is: a kind of crystal oscillator cover plate multi-layer nickel-plating process by adopting single bath process, it is characterized in that adopting many waveforms electroplating power supply, by adjusting current waveform, the current density of many waveforms electroplating power supply, to plating tank, in same plating tank, make same nickel-plating liquid complete multiple layer nickel plating by different crystal grain degree of crystallinity, different thickness of coating the power delivery of different current waveforms, current density.
Preferred version of the present invention is: described current waveform comprises direct current, pulsed current and commutating pulse electric current.
Preferred version of the present invention is: described current density is 0.1-10A/dm
2.
Preferred version of the present invention is: described current density is preferably 0.5-1A/dm
2.
Preferred version of the present invention is: the described direct current electrode position time is 1s-30min; Described pulsed current work is than being 0.1-1.0:0.5-5, and the working hour is 50-70:30-50ms, and electroplating time is 1s-30min; Described commutating pulse current work is than being 0.1-1.0:0.5-3, and be 140-800ms turnaround time, and electroplating time is 1s-20min.
Preferred version of the present invention is: preferred 5s-10min of described direct current electrode position time; Described pulsed current work is than preferred 0.1-0.5:0.5-2, and the working hour is 50-70:30-50ms, the preferred 2s-10min of electroplating time; Described commutating pulse current work is than preferred 0.1-0.4:0.6-1, and be 140-800ms turnaround time, the preferred 2s-10min of electroplating time.
Preferred version of the present invention is: preferred 10s-5min of described direct current electrode position time; Described pulsed current work is than preferred 0.1-0.2:0.8-0.9, and the working hour is 50-70:30-50ms, the preferred 6s-3min of electroplating time; Described commutating pulse current work is than preferred 0.1-0.4:0.6-1, and be 140-800ms turnaround time, the preferred 4s-2min of electroplating time.
Preferred version of the present invention is: described nickel-plating liquid is watts nickel liquid, half bright nickel plating bath or bright nickel plating bath.
Preferred version of the present invention is: described every liter of nickel-plating liquid sulfur acid nickel 0.9-1.14mol, nickelous chloride 0.15-0.21mol, boric acid 0.6-0.8mol, brightening agent 0-0.012mol, tensio-active agent 10-50ppm; PH value is 3.5-4.1, temperature 40-45 DEG C.
An application for crystal oscillator cover plate multi-layer nickel-plating process by adopting single bath process is applied in the nickel plating of microelectronics, semiconducter device and electronic component and metal parts.Homogeneity, solidity to corrosion, hardness, weldability, magnetic, ornamental upper tool have an enormous advantage.
The present invention adopts a current waveform automatically to change, current density can be followed the tracks of many waveforms electroplating power supply of adjustment, many waveforms electroplating power supply is arranged to combination and the corresponding working hour of more than three kinds different wave, adapt to average current density, make crystal grain crystalline orientation difference, nickel layer thickness difference completes the nickel dam of multilayered structure and electroplates, its technique is simple, cost-saving, the corresponding corrosion electrode potential difference of each coating, interlayer potential difference is greater than 40mv, combined electrical potential difference is greater than 140mv, resistance to corrosion is strong, can be applicable at microelectronics, in the nickel plating of semiconducter device and electronic component and metal parts.
Embodiment
Below in conjunction with embodiment, the invention will be further described.
A kind of crystal oscillator cover plate multi-layer nickel-plating process by adopting single bath process, adopt many waveforms electroplating power supply, by adjusting current waveform, the current density of many waveforms electroplating power supply, to plating tank, in same plating tank, make same nickel-plating liquid complete multiple layer nickel plating by different crystal grain degree of crystallinity, different thickness of coating the power delivery of different current waveforms, current density.Described current waveform comprises direct current, pulsed current and commutating pulse electric current; Described current density is 0.1-10A/dm
2; Described current density is preferably 0.5-1A/dm
2; The described direct current electrode position time is 1s-30min; Described pulsed current work is than being 0.1-1.0:0.5-5, and the working hour is 50-70:30-50ms, and electroplating time is 1s-30min; Described commutating pulse current work is than being 0.1-1.0:0.5-3, and be 140-800ms turnaround time, and electroplating time is 1s-20min; Preferred 5s-10min of described direct current electrode position time; Described pulsed current work is than preferred 0.1-0.5:0.5-2, and the working hour is 50-70:30-50ms, the preferred 2s-10min of electroplating time; Described commutating pulse current work is than preferred 0.1-0.4:0.6-1, and be 140-800ms turnaround time, the preferred 2s-10min of electroplating time; Preferred 10s-5min of described direct current electrode position time; Described pulsed current work is than preferred 0.1-0.2:0.8-0.9, and the working hour is 50-70:30-50ms, the preferred 6s-3min of electroplating time; Described commutating pulse current work is than preferred 0.1-0.4:0.6-1, and be 140-800ms turnaround time, the preferred 4s-2min of electroplating time; Described nickel-plating liquid is watts nickel liquid, half bright nickel plating bath or bright nickel plating bath, every liter of sulfur acid nickel 0.9-1.14mol of nickel-plating liquid, nickelous chloride 0.15-0.21mol, boric acid 0.6-0.8mol, brightening agent 0-0.012mol, tensio-active agent 10-50ppm.
The application of crystal oscillator cover plate multi-layer nickel-plating process by adopting single bath process of the present invention is applied in the nickel plating of microelectronics, semiconducter device and electronic component and metal parts.
First logical direct current, electroplate 5 minutes, switch pulse electric current, 02:0.8 is compared in pulsed current work, working hour is 60ms:40ms, electroplate after 3 minutes, switch to commutating pulse electric current, work is than being 0.1:0.9, be 140ms:40ms turnaround time, electroplate after 2 minutes, again switch dc point, pulsed current and commutating pulse current cycle and complete the plating of multilayer nickel dam, in whole loop cycle, the average current density of electric current is 0.2A/dm
2, electroplating time is 120 minutes.
Get thickness 0.1mm, area is 2.0X2.7mm
2cut down material surface matting after, nickel plating, nickel-plating liquid is single nickel salt 250 grams per liters, nickelous chloride 35 grams per liters, boric acid 40 grams per liters and sodium lauryl sulphate 0.01 grams per liter, the pH value 3.8 of nickel-plating liquid, temperature is 40 DEG C, average current density is 0.2A/ dm
2, electroplating time is 120 minutes, thickness of coating is 5 microns.
After cover plate nickel plating, carry out salt mist experiment, spray 8 hours under 35 ° of conditions by the sodium-chlor neutral solution of 0.5-3%, sealing 16 hours is a cycle, and anticorrosion corrosion area is not more than 5% for qualified, electronic devices and components salt mist experiment requirement at least 24 hours conventionally.
Below the present invention has been done to further illustrate, the various changes that those skilled in the art make under embodiment of the present invention, all in protection domain of the present invention in conjunction with the embodiments.
Claims (10)
1. a crystal oscillator cover plate multi-layer nickel-plating process by adopting single bath process, it is characterized in that: adopt many waveforms electroplating power supply, by adjusting current waveform, the current density of many waveforms electroplating power supply, to plating tank, in same plating tank, make same nickel-plating liquid complete multiple layer nickel plating by different crystal grain degree of crystallinity, different thickness of coating the power delivery of different current waveforms, current density.
2. a kind of crystal oscillator cover plate multi-layer nickel-plating process by adopting single bath process according to claim 1, is characterized in that: described current waveform comprises direct current, pulsed current and commutating pulse electric current.
3. a kind of crystal oscillator cover plate multi-layer nickel-plating process by adopting single bath process according to claim 1, is characterized in that: described current density is 0.1-10A/dm
2.
4. a kind of crystal oscillator cover plate multi-layer nickel-plating process by adopting single bath process according to claim 3, is characterized in that: described current density is preferably 0.5-1A/dm
2.
5. a kind of crystal oscillator cover plate multi-layer nickel-plating process by adopting single bath process according to claim 1, is characterized in that: the described direct current electrode position time is 1s-30min; Described pulsed current work is than being 0.1-1.0:0.5-5, and the working hour is 50-70:30-50ms, and electroplating time is 1s-30min; Described commutating pulse current work is than being 0.1-1.0:0.5-3, and be 140-800ms turnaround time, and electroplating time is 1s-20min.
6. a kind of crystal oscillator cover plate multi-layer nickel-plating process by adopting single bath process according to claim 5, is characterized in that: preferred 5s-10min of described direct current electrode position time; Described pulsed current work is than preferred 0.1-0.5:0.5-2, and the working hour is 50-70:30-50ms, the preferred 2s-10min of electroplating time; Described commutating pulse current work is than preferred 0.1-0.4:0.6-1, and be 140-800ms turnaround time, the preferred 2s-10min of electroplating time.
7. a kind of crystal oscillator cover plate multi-layer nickel-plating process by adopting single bath process according to claim 6, is characterized in that: preferred 10s-5min of described direct current electrode position time; Described pulsed current work is than preferred 0.1-0.2:0.8-0.9, and the working hour is 50-70:30-50ms, the preferred 6s-3min of electroplating time; Described commutating pulse current work is than preferred 0.1-0.4:0.6-1, and be 140-800ms turnaround time, the preferred 4s-2min of electroplating time.
8. a kind of crystal oscillator cover plate multi-layer nickel-plating process by adopting single bath process according to claim 1, is characterized in that: described nickel-plating liquid is watts nickel liquid, half bright nickel plating bath or bright nickel plating bath.
9. a kind of crystal oscillator cover plate multi-layer nickel-plating process by adopting single bath process according to claim 1, it is characterized in that: described every liter of nickel-plating liquid sulfur acid nickel 0.9-1.14mol, nickelous chloride 0.15-0.21mol, boric acid 0.6-0.8mol, brightening agent 0-0.012mol, tensio-active agent 10-50ppm; PH value is 3.5-4.1, temperature 40-45 DEG C.
10. an application for crystal oscillator cover plate multi-layer nickel-plating process by adopting single bath process is applied in the nickel plating of microelectronics, semiconducter device and electronic component and metal parts.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103668370A (en) * | 2013-12-19 | 2014-03-26 | 潮州市连思科技发展有限公司 | Method for pulse plating of disk |
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2014
- 2014-06-27 CN CN201410296419.6A patent/CN104047039A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103668370A (en) * | 2013-12-19 | 2014-03-26 | 潮州市连思科技发展有限公司 | Method for pulse plating of disk |
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