CN104046986A - Manufacturing method for three-dimension controllable silicon based mold - Google Patents
Manufacturing method for three-dimension controllable silicon based mold Download PDFInfo
- Publication number
- CN104046986A CN104046986A CN201310080873.3A CN201310080873A CN104046986A CN 104046986 A CN104046986 A CN 104046986A CN 201310080873 A CN201310080873 A CN 201310080873A CN 104046986 A CN104046986 A CN 104046986A
- Authority
- CN
- China
- Prior art keywords
- silicon
- silica
- mould
- embossment structure
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
The invention relates to manufacturing of a silicon based mold in mold pressing manufacturing technologies, and the method is used for machining a three-dimensional shape with a continuously variable embossment structure on a silicon base. The main machining steps include: 1. making a female die with a continuous curved surface appearance embossment structure on a metal material by a single-point diamond turning technology; 2. performing spin coating of a layer of polymer film on a silicon substrate; 3. transferring the embossment structure on the die to the polymer by a hot stamping technology; and 4. transferring the embossment structure on the glue to the silicon material at a same proportion through plasma etching, thus obtaining the silicon based mold. The method provided by the invention has the advantages of controllable appearance, simple process, fast speed, and good repeatability.
Description
Technical field
The invention belongs to the manufacture method of mould in mould pressing technology, can be used for processing micro optical element, relate to the transfer techniques of curved surface embossment structure figure layer.
Background technology
Development along with micro optical element manufacturing technology, the exposure wavelength adopting for the photoetching technique of processing traditional micro optical element is contracted to the limit, be accompanied by the growth of short wave length exposure technical fee and the raising of complicacy, mould pressing technology is flexible, with low cost with its technique, process the advantage such as quick develops rapidly, becomes the main candidate technologies of Next Generation Lithography.
Technology of die manufacturing is the key of mold pressing manufacturing technology, the resolving power of mould is determining to transfer to the resolving power of the figure on polymkeric substance, high-precision mould just likely copies high-precision figure, and therefore, the manufacturing technology of mould is one of study hotspot of mold pressing manufacturing technology always.The material that is selected as mould generally has high hardness and tensile strength, thermal expansivity is little and etch resistance good, could there is in use high precision like this, as silicon chip, quartz plate, metal, sapphire and diamond etc., these high rigidity moulds have also increased the expense of making mould when guaranteeing high precision copy pattern, therefore the present invention avoids directly processing structure on these moulding stock, but first on spin coating polymkeric substance thereon, process embossment structure, again by plasma reaction lithographic technique, by transferring on moulding stock of figure layer equal proportion.
Plasma body is owing to having special energy state, its processing and manufacturing technology has become the common technology in modern micro-manufacture field, wherein, owing to adopting the difference of reactant gases, and the plasma etching technology that machined material is removed becomes the focus of research in recent years, but because the material that traditional etching will be removed is single, structure is one dimension, only need to select suitable mask and reactant gases, for the material by lithography with curved-surface structure, also do not have at present the practical methods of Gong the operation of moulding to occur.
Summary of the invention
The object of this invention is to provide a kind of technique simple, operate controlled, reproducible three-dimensional silica base mould manufacturing method, the expensive and high complexity problem existing to solve prior art.
The problem existing in order to overcome prior art, the invention provides a kind of three-dimensional silicon controlled rectifier base mould manufacturing method, comprises the following steps:
1, design and produce the negative plate of die needed metal:
Design according to actual needs the negative plate of silica-based mould, application single-point diamond cutting technology processes the negative plate with three-dimension curved surface embossment structure on metal material surface;
2, by PMMA solute and methyl-phenoxide solvent according to solute: solution=2～5:10 ratio preparation PMMA solution, the PMMA solution preparing is spun in silicon base, dry, wait for mold pressing;
3, by hot press printing technology, the structure on metal die is transferred on the silica-base material of gained in step 2;
4, reactant gases O
2with SF
6volume ratio be 2.5～3.5:10, by plasma etching technology, resulting materials in step 3 is carried out to etching, the embossment structure on polymkeric substance is transferred on silicon and is obtained silica-based mould, complete silica-based mould manufacture.
In above-mentioned steps 1, the three-dimensional relief structures degree of depth of processing is greater than 5mm and is less than 10mm.
In above-mentioned steps 4, after determining gas ratio, the increase by equal proportion or reduce the intake of two kinds of gases, thus the concentration that changes the reactant gases that passes into reaction chamber etch rate is controlled, the three-dimensional relief structures degree of depth is more shallow, etch rate is slower.
Superiority of the present invention is:
Traditional mold pressing is manufactured selected die hard material and is generally silicon or metal, and the advantage of metal die is that thermal distortion is little, and moulding replication is good, but that metal die has the process-cycle is long, and photoresist material is difficult to remove, and somewhat expensive etc. affect the shortcoming of its popularization; Although soft mold is lower such as material costs such as PDMS, its working accuracy is also relatively low, and work-ing life is shorter; Development along with plasma technique, the etching of silicon is removed to technology day by day ripe, it is more and more easier that the processing of silica-based mould also becomes, although silicon materials are more crisp, in use easily broken, if but can copy cheaply a large amount of silica-based moulds, and take in use certain breakage-proof measure, and just can obtain the mold pressing effect that precision is higher, there is higher promotional value, method provided by the present invention has just in time solved this problem, thereby greatly reduces production cost.In addition the present invention also has following advantage:
1, the method is of many uses, can be used for processing the silica-based mould of different surfaces embossment structure.
2, only need the negative plate of once expensive making, then available its copies high-precision silicon mould, carries out the massive duplication of element, lowers the cost of manufacture of micro optical element, shortens fabrication cycle, enhances productivity.
3, when with the method transferring picture layer of plasma etching, can fixed gases ratio, lower or rising gas concentration, etch rate is regulated, the embossment structure that is applicable to different depths feature shifts.
4, present method, because mechanisms of plasma chemical reactions is identical, therefore, only needs to guarantee that etching parameters is identical, just can obtain stable etch rate, and reproducible.
Accompanying drawing explanation
Fig. 1 is that the present invention makes master tooling side-view;
Fig. 2 is the cross-sectional view of master tooling in the present invention;
Fig. 3 is making schema of the present invention;
Fig. 4 is the etch rate schematic diagram of gas with various ratio to bi-material;
Fig. 5 is that figure layer of the present invention shifts schematic diagram;
Fig. 6,7 is that embodiment bis-makes silica-based Mold Making schematic diagram;
Fig. 8 is the silica-based Mold Making schematic diagram of embodiment tri-.
Embodiment
A three-dimensional silicon controlled rectifier base mould manufacturing method, comprises the following steps:
1, design and produce the negative plate of die needed metal:
Design according to actual needs the negative plate of silica-based mould, application single-point diamond cutting technology processes the negative plate with three-dimension curved surface embossment structure on metal material surface;
2, by PMMA solute and methyl-phenoxide solvent according to solute: solution=2～5:10 ratio preparation PMMA solution, the PMMA solution preparing is spun in silicon base, dry, wait for mold pressing;
3, by hot press printing technology, the structure on metal die is transferred on the silica-base material of gained in step 2;
4, determine the design parameter of plasma etching, same rate etching for silicon and this bi-material of PMMA is removed, what bring into play Main Function is the ratio of reactant gases, the present invention passes through series of experiments, work out corresponding different solute and solution than time the reactant gases ratio removal speed to bi-material, and finally obtain different solutes and solution than time O
2with SF
6proportional range be 2.5 ~ 3.5:10;
5, by the parameter of gained in step 4, by plasma etching technology, resulting materials in step 3 is carried out to etching, the embossment structure on polymkeric substance is transferred on silicon and obtained silica-based mould, complete silica-based mould manufacture.
When institute's processing mold depth structure is more shallow, the intake of two kinds of gases of pro rata minimizing simultaneously, by reducing the intake of reactant gases, slows down the removal speed of material, is beneficial to the realization that mould is manufactured, such as, SF
6and O
2when gas flow is respectively 15sccm and 50sccm, etching 5min can remove the bi-material of about 2.5mm thickness, and same ratio, if when the flow of two kinds of gases is respectively 3sccm and 10sccm, removing speed will decline to a great extent, and this is highly beneficial for the processing compared with shallow structure.
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is illustrated.
Embodiment 1:
1, design according to actual needs the negative plate of silica-based mould, the method for application single-point diamond cutting processes the pattern designing on metallic copper material, sees Fig. 1 and Fig. 2, the three-dimensional relief structures degree of depth 6.69 μ m in this embodiment;
2, according to solute in solution quality than being equipped with PMMA solution for the ratio of 3:10 in methyl-phenoxide; After solute fully dissolves, with KW-4A/5 type sol evenning machine, be spun on the silicon chip through cleaning, dry 5min for 90 ℃, after drying, form the PMMA rete of even thickness;
3, by the method for hot padding, the embossment structure on master tooling is transferred on the silica-base material that scribbles PMMA;
4, on the ICP180 equipment of producing in Oxford Instrument Ltd., carry out plasma etching, as Fig. 4, optimal gas ratio when position of intersecting point is etching, tests to such an extent that intersection point gas ratio is SF
6: O
2during=3:10, in this ratio, set two kinds of gases that pass into reaction chamber and be respectively 15sccm and 50sccm, through 15 minutes plasma etchings, complete figure layer and shift, obtain die needed, as Fig. 5.
Embodiment 2:
1, as shown in Figure 6, wherein constructional depth is 6 μ m to the negative plate structure of design metal, processes desired structure, as the negative plate of making silicon mould by the method for single-point diamond cutting on metallic copper;
2, according to solute in solution quality than being equipped with PMMA solution for the ratio of 5:10 in methyl-phenoxide; After solute fully dissolves, with KW-4A/5 type sol evenning machine, be spun on the silicon chip through cleaning, dry 5min for 90 ℃, after drying, form the PMMA rete of even thickness;
3, by the method for hot padding, the embossment structure on negative plate is transferred on the silica-base material that scribbles PMMA;
4, plasma etching is realized the transfer of figure layer, by gas ratio SF
6: O
2=3.5:10, sets two kinds of gases passing into reaction chamber and is respectively 9sccm and 30sccm, through 30 minutes plasma etchings, completes figure layer and shifts, obtain die needed, as Fig. 7.
Embodiment 3:
1, as shown in Figure 8, wherein constructional depth is 9 μ m to the negative plate structure of design metal, processes desired structure, as the negative plate of making silicon mould by the method for single-point diamond cutting on metallic copper;
2, according to solute in solution quality than being equipped with PMMA solution for the ratio of 2:10 in methyl-phenoxide; After solute fully dissolves, with KW-4A/5 type sol evenning machine, be spun on the silicon chip through cleaning, dry 5min for 90 ℃, after drying, form the PMMA rete of even thickness;
3, by the method for hot padding, the embossment structure on negative plate is transferred on the silica-base material that scribbles PMMA;
4, plasma etching is realized the transfer of figure layer, by gas ratio SF
6: O
2=2.5:10, two kinds of gases that setting passes into reaction chamber are respectively 15sccm and 50sccm, through 20 minutes plasma etchings, complete figure layer and shift, and obtain die needed.
The above-mentioned description to embodiment is can understand and apply the invention for ease of those skilled in the art.Person skilled in the art obviously can easily make various modifications to these embodiment, and General Principle described herein is applied in other embodiment and needn't passes through performing creative labour.Therefore, the invention is not restricted to the embodiment here, those skilled in the art are according to announcement of the present invention, and the improvement of making for the present invention and modification all should be within protection scope of the present invention.
Claims (3)
1. a three-dimensional silicon controlled rectifier base mould manufacturing method, comprises the following steps:
1) design and produce the negative plate of die needed metal:
Design according to actual needs the negative plate of silica-based mould, application single-point diamond cutting technology processes the negative plate with three-dimension curved surface embossment structure on metal material surface;
2) by PMMA solute and methyl-phenoxide solvent according to solute: solution=2～5:10 ratio preparation PMMA solution, the PMMA solution preparing is spun in silicon base, dry, wait for mold pressing;
3) by hot press printing technology, the structure on metal die is transferred on the silica-base material of gained in step 2;
4) reactant gases O
2with SF
6volume ratio be 2.5～3.5:10, by plasma etching technology, resulting materials in step 3 is carried out to etching, the embossment structure on polymkeric substance is transferred on silicon and is obtained silica-based mould, complete silica-based mould manufacture.
2. three-dimensional silicon controlled rectifier base mould manufacturing method as claimed in claim 1, is characterized in that: the three-dimensional relief structures degree of depth of processing in described step 1) is greater than 5mm and is less than 10mm.
3. three-dimensional silicon controlled rectifier base mould manufacturing method as claimed in claim 1, it is characterized in that: in described step 4), after determining gas ratio, increase by equal proportion or reduce the intake of two kinds of gases, thereby the concentration that changes the reactant gases that passes into reaction chamber is controlled etch rate, the three-dimensional relief structures degree of depth is more shallow, and etch rate is slower.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310080873.3A CN104046986A (en) | 2013-03-14 | 2013-03-14 | Manufacturing method for three-dimension controllable silicon based mold |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310080873.3A CN104046986A (en) | 2013-03-14 | 2013-03-14 | Manufacturing method for three-dimension controllable silicon based mold |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104046986A true CN104046986A (en) | 2014-09-17 |
Family
ID=51500371
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310080873.3A Pending CN104046986A (en) | 2013-03-14 | 2013-03-14 | Manufacturing method for three-dimension controllable silicon based mold |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104046986A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109950335A (en) * | 2019-04-08 | 2019-06-28 | 西安工业大学 | A kind of photovoltaic conversion structure and production method of visible light |
| CN112334290A (en) * | 2018-07-16 | 2021-02-05 | 脸谱科技有限责任公司 | Duty cycle, depth and surface energy control in nanofabrication |
| CN112897455A (en) * | 2021-01-20 | 2021-06-04 | 西安应用光学研究所 | Method for preparing continuous curved surface three-dimensional microstructure based on ICP (inductively coupled plasma) etching |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101061058A (en) * | 2004-05-24 | 2007-10-24 | 新加坡科技研究局 | Imprinting of supported and free-standing 3-D micro-or nano-structures |
| CN102190283A (en) * | 2010-03-12 | 2011-09-21 | 国家纳米技术与工程研究院 | Microfluidic chip preparation method capable of realizing microsphere discretization |
| US20120138566A1 (en) * | 2010-12-02 | 2012-06-07 | Chung-Shan Institute of Science and Technology, Armaments, Bureau, Ministry of National Defense | Method for Lithography Etching a Glass Substrate by Miniature Balls |
-
2013
- 2013-03-14 CN CN201310080873.3A patent/CN104046986A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101061058A (en) * | 2004-05-24 | 2007-10-24 | 新加坡科技研究局 | Imprinting of supported and free-standing 3-D micro-or nano-structures |
| CN102190283A (en) * | 2010-03-12 | 2011-09-21 | 国家纳米技术与工程研究院 | Microfluidic chip preparation method capable of realizing microsphere discretization |
| US20120138566A1 (en) * | 2010-12-02 | 2012-06-07 | Chung-Shan Institute of Science and Technology, Armaments, Bureau, Ministry of National Defense | Method for Lithography Etching a Glass Substrate by Miniature Balls |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112334290A (en) * | 2018-07-16 | 2021-02-05 | 脸谱科技有限责任公司 | Duty cycle, depth and surface energy control in nanofabrication |
| CN112334290B (en) * | 2018-07-16 | 2022-08-19 | 元平台技术有限公司 | Duty cycle, depth and surface energy control in nanofabrication |
| CN109950335A (en) * | 2019-04-08 | 2019-06-28 | 西安工业大学 | A kind of photovoltaic conversion structure and production method of visible light |
| CN112897455A (en) * | 2021-01-20 | 2021-06-04 | 西安应用光学研究所 | Method for preparing continuous curved surface three-dimensional microstructure based on ICP (inductively coupled plasma) etching |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI464020B (en) | A method for making a mold having a three-dimensional microstructure and a mold having a three-dimensional microstructure | |
| US20130284690A1 (en) | Process for producing highly ordered nanopillar or nanohole structures on large areas | |
| CN102712110B (en) | Method for manufacturing a master mold which is used to form a micropatterned film applied to an exterior of a household appliance and manufacturing apparatus and method of the film using the master mold | |
| CN112630872A (en) | Preparation method of three-dimensional micro-lens array | |
| CN104191548B (en) | Quick preparation method of die of transparent adhesive tape-carved micro-fluidic chip | |
| WO2018214202A1 (en) | Method for fabricating nanometre line grid structure | |
| CN104046986A (en) | Manufacturing method for three-dimension controllable silicon based mold | |
| Zhou et al. | Fabrication of microlens array on 6H-SiC mold by an integrated microcutting-etching process | |
| CN102758226B (en) | Accurate electroplating machining method for long-grating roller stamping mould for machine tool | |
| CN102707567A (en) | Flexible-substrate-based nano-imprint template replication method | |
| JP2005508269A5 (en) | ||
| WO2018201248A1 (en) | Methods for micro and nano fabrication by selective template removal | |
| JP4646705B2 (en) | Mold manufacturing method and molded product manufacturing method | |
| JP2010014857A (en) | Method for manufacturing microlens mold, microlens mold, and microlens | |
| TW201438877A (en) | Pressing wheel and method for manufacturing pressing wheel | |
| Mekaru et al. | Fabrication of glass-like carbon molds to imprint on glass materials by MEMS processing technologies | |
| CN102169289B (en) | Reverse-roll imprint-moulding method of over-long grating ruler for machine tool | |
| JP5154705B1 (en) | Manufacturing method of polishing pad molding die, polishing pad molding die manufactured by the method, and polishing pad manufactured by the die | |
| CN102736410B (en) | Method for machining large-area nanoimprint silicon die under multi-point contact mode | |
| CN101834407A (en) | Method for preparing surface-emitting surface plasma laser by utilizing nanoimprint technology | |
| TW200524820A (en) | Method of fabricating a stamper with microstructure patterns | |
| CN108327181A (en) | Nanometer texture transfer injection mold and its method in a kind of mould | |
| CN104459852A (en) | Preparation method of metal grating | |
| CN114594536B (en) | Method for preparing ultra-light Fresnel lens | |
| CN102866579A (en) | Method for manufacturing rotary drum pressing die based on dynamic nano engraving technology |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140917 |