CN104046277A - Memory polishing liquid - Google Patents
Memory polishing liquid Download PDFInfo
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- CN104046277A CN104046277A CN201410296803.6A CN201410296803A CN104046277A CN 104046277 A CN104046277 A CN 104046277A CN 201410296803 A CN201410296803 A CN 201410296803A CN 104046277 A CN104046277 A CN 104046277A
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- sodium
- polishing liquid
- memory
- organic additive
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- ing And Chemical Polishing (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses memory polishing liquid. The memory polishing liquid is characterized by containing the following substances in parts by weight: 1-8 parts of sodium acid pyrophosphate, 8-16 parts of sodium aluminum phosphate, 1-7 parts of surfactant, 1-3 parts of organic additive, 1-2 parts of regulator, 8-10 parts of sodium oxalate, 3-8 parts of degreasing agent, 7-12 parts of degreasing powder, 10-16 parts of anhydrous sodium sulfate, 7-13 parts of ammonia water, 7-13 parts of aluminum hydroxide and 10-15 parts of stearamide. The polishing liquid disclosed by the invention is stable in performance and good in polishing effect and can meet the requirements of a nano-electronic phase change memory preparation processes.
Description
Technical field
The present invention relates to a kind of storer polishing fluid.
Background technology
Phase transition storage reads at a high speed because having, high erasable number of times, non-volatile, component size is little, low in energy consumption, anti-strong motion and radioprotective, cost have the advantages such as competitive power, and the most possible nonvolatile memory of future generation that replaces current flash memories is thought by Er Bei international semiconductor employer's organization.The ultimate principle of phase transition storage technology is to take chalcogenide compound as storage media, utilizes electric energy to make material mutually change and realize writing and wiping of information between crystalline state and non-crystalline state (high resistant), and reading of information leans on the variation of measuring resistance to realize.Storage unit comprises the pore being defined by dielectric substance, and phase change material is deposited in pore, and phase change material is connection electrode on one end of pore.Electrode contact makes electric current programme to this unit by this passage generation joule heating, or reads the resistance states of this unit.
At present, when building phase-change memory cell, current way is: first the method sediment phase change material by magnetron sputtering is in the pore being defined by dielectric substance, then by reactive ion etching CRIE) or the method for chemically machinery polished, the phase change material of thin empty top is removed.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of storer polishing fluid.
For solving the problems of the technologies described above, the technical solution used in the present invention is:
A storer polishing fluid, is characterized in that, comprises the material of following parts by weight: sodium acid pyrophosphate 1-8 part, aluminum phosphate sodium 8-16 part, tensio-active agent 1-7 part, organic additive 1-3 part, conditioning agent 1-2 part, sodium oxalate 8-10 part, degreaser 3-8 part, degreasing powder 7-12 part, anhydrous sodium sulphate 10-16 part, ammoniacal liquor 7-13 part, aluminium hydroxide 7-13 part, stearylamide 10-15 part.
Polishing fluid stable performance of the present invention, polishing effect is good, can meet the needs of preparing technique in sodium electronic phase-variable memory.
Embodiment
Embodiment 1
A storer polishing fluid, is characterized in that, comprises the material of following parts by weight: sodium acid pyrophosphate 1-8 part, aluminum phosphate sodium 8-16 part, tensio-active agent 1-7 part, organic additive 1-3 part, conditioning agent 1-2 part, sodium oxalate 8-10 part, degreaser 3-8 part, degreasing powder 7-12 part, anhydrous sodium sulphate 10-16 part, ammoniacal liquor 7-13 part, aluminium hydroxide 7-13 part, stearylamide 10-15 part.
Claims (1)
1. a storer polishing fluid, is characterized in that, comprises the material of following parts by weight: sodium acid pyrophosphate 1-8 part, aluminum phosphate sodium 8-16 part, tensio-active agent 1-7 part, organic additive 1-3 part, conditioning agent 1-2 part, sodium oxalate 8-10 part, degreaser 3-8 part, degreasing powder 7-12 part, anhydrous sodium sulphate 10-16 part, ammoniacal liquor 7-13 part, aluminium hydroxide 7-13 part, stearylamide 10-15 part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410296803.6A CN104046277A (en) | 2014-06-28 | 2014-06-28 | Memory polishing liquid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410296803.6A CN104046277A (en) | 2014-06-28 | 2014-06-28 | Memory polishing liquid |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104046277A true CN104046277A (en) | 2014-09-17 |
Family
ID=51499689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410296803.6A Pending CN104046277A (en) | 2014-06-28 | 2014-06-28 | Memory polishing liquid |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104046277A (en) |
-
2014
- 2014-06-28 CN CN201410296803.6A patent/CN104046277A/en active Pending
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140917 |
|
| WD01 | Invention patent application deemed withdrawn after publication |