CN104036730B - The test pixel circuit of AMOLED - Google Patents
The test pixel circuit of AMOLED Download PDFInfo
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Abstract
The present invention provides the test pixel circuit of a kind of AMOLED, and it includes pixel driver module and and not circuit module；It is connected with power end, data signal end, Current Scan signal end, front-seat scanning signal end, predeterminated voltage end, LED control signal input and output at above-mentioned pixel-driving circuit；The signal of the signal of the LED control signal input using above-mentioned pixel driver module for the above-mentioned and not circuit module and Current Scan signal input part is as input signal, and the output of above-mentioned and not circuit module is connected to the front-seat scanning signal input part of above-mentioned pixel driver module.The test pixel circuit of the AMOLED according to the present invention, when utilizing TEG measurement platform to measure, it is not necessary to measures the signal of front row scanning signal input part, therefore decreases independent probes number required during measurement.
Description
Technical field
The present invention relates to the test pixel circuit of a kind of AMOLED, particularly relate to decrease measurement when institute
The test pixel circuit of the AMOLED of the number of probes needing.
Background technology
AMOLED (Active Matrix/Organic Light Emitting Diode: organic of active matrix
Near-infrafed photodiodes panel) it due to features such as reaction speed are very fast, contrast is higher, visual angle is wider, is referred to as
Display Technique of future generation.
In existing AMOLED product, the image element circuit in AA district typically uses
The nTmC such as 4T1C/4T2C/5T1C/6T1C/6T2C/7T1C (T represents transistor, and C represents electric capacity)
The structure of (m, n are positive integer for n >=4, m >=1), its circuit design is complex.Therefore, exist
Carry out during high-res product design stricter to process requirements.In order to much sooner, monitor exactly
Product, generally arranges the test electricity with test point corresponding with each element in AMOLED product
Road (testkey), by measuring each test circuit, obtains the parameter of each element.
Fig. 1 shows the example of the test pixel circuit of a complex 6T1C.This pixel is surveyed
Examination circuit include: Organic Light Emitting Diode OLED, the first transistor T1, transistor seconds T2,
Third transistor T3, the 4th transistor T4, the 5th transistor T5, the 6th transistor T6, electric capacity
C, transistor T1～T6 are PMOS transistor.Wherein, the source electrode of the first transistor T1 connects
To data signal input DM, it is brilliant that its grid is connected to Current Scan signal input part SN and the 5th
The grid of body pipe T5, its drain electrode is connected to source electrode and third transistor T3 of transistor seconds T2
Drain electrode；The drain electrode of transistor seconds T2 is connected to source electrode and the 5th crystal of the 4th transistor T4
The drain electrode of pipe T5, its grid is connected to the source electrode of the 5th transistor T5, the source of the 6th transistor T6
Pole and one end of electric capacity；The other end of this electric capacity is connected to power end VDD；Third transistor T3
Grid be connected to grid and the LED control signal input EN of the 4th transistor T4, its source electrode
It is connected to power end VDD；The drain electrode of the 4th transistor T4 is connected to Organic Light Emitting Diode OLED
Anode；The drain electrode of the 6th transistor T6 is connected to predeterminated voltage end VIN, before its grid is connected to
Row scanning signal input part SN-1；The negative electrode of Organic Light Emitting Diode OLED is connected to signal output
End Output.
Utilizing TEG (test element goup: testing element group) measurement platform to such as Fig. 1 institute
When the test pixel circuit showing measures, 7 independent probes are needed to measure, these 7
The signal of independent probes respectively metric data signal end DM, Current Scan signal end SN signal,
The signal of front-seat scanning signal end SN-1, the voltage of power end VDD, predeterminated voltage end VIN
The signal of voltage, the signal of LED control signal input EN and output Output.
And, with the rising of complexity in circuits, required independent probes number is possible to increase therewith
Add, therefore, it is possible to need that more independent probes is equipped with to measurement platform to complete Correlated Case with ARMA Measurement.
Thus one, the cost of corollary equipment can be increased.
Content of the invention
It is an object of the invention to, when a kind of measurement is provided, decrease the AMOLED of independent probes number
Test pixel circuit.
To achieve these goals, the technical scheme of the present invention provides the pixel of a kind of AMOLED to survey
Examination circuit, it includes pixel driver module and application of logic circuit module；It is connected with in above-mentioned pixel driver module
Power end, data signal end, Current Scan signal end, front row are scanned signal end, predeterminated voltage end, are sent out
Optical control signal input and output；Above-mentioned application of logic circuit module sending out with above-mentioned pixel driver module
The signal of the signal of optical control signal input and Current Scan signal input part is as input signal, above-mentioned
The output of application of logic circuit module is connected to the front-seat scanning signal input part of above-mentioned pixel driver module.
In the test pixel circuit of above-mentioned AMOLED, above-mentioned application of logic circuit module includes by multiple
The logic circuit of thyristor composition.
In the test pixel circuit of above-mentioned AMOLED, above-mentioned application of logic circuit module is NAND Logic
Circuit module.
In the test pixel circuit of above-mentioned AMOLED, above-mentioned multiple thyristors include
The first transistor, transistor seconds, third transistor, the 4th transistor, wherein, above-mentioned first
Transistor, transistor seconds are PMOS transistor, and above-mentioned third transistor, the 4th transistor are
Nmos pass transistor；Above-mentioned Current Scan signal input part is connected to above-mentioned transistor seconds and the 3rd
The grid of transistor, above-mentioned LED control signal input is connected to above-mentioned the first transistor and the 4th
The grid of transistor, above-mentioned the first transistor, the source electrode of transistor seconds be connected to power end, on
State the first transistor, the drain electrode of transistor seconds is connected to above-mentioned front-seat scanning signal input part, on
The drain electrode stating third transistor is connected to above-mentioned front-seat scanning signal input part, above-mentioned third transistor
Source electrode be connected to the drain electrode of above-mentioned 4th transistor, the source ground of above-mentioned 4th transistor.
In the test pixel circuit of above-mentioned AMOLED, above-mentioned multiple thyristors include
The first transistor, transistor seconds, third transistor, the 4th transistor, wherein, above-mentioned first
Transistor, transistor seconds are PMOS transistor, and above-mentioned third transistor, the 4th transistor are
Nmos pass transistor；Above-mentioned Current Scan signal input part is connected to above-mentioned transistor seconds and the 3rd
The grid of transistor, above-mentioned LED control signal input is connected to above-mentioned the first transistor and the 4th
The grid of transistor, above-mentioned the first transistor, the source electrode of transistor seconds be connected to power end, on
State the first transistor, the drain electrode of transistor seconds is connected to above-mentioned front-seat scanning signal input part, on
The drain electrode stating third transistor is connected to above-mentioned front-seat scanning signal input part, above-mentioned third transistor
Source electrode be connected to the drain electrode of above-mentioned 4th transistor, the source electrode of above-mentioned 4th transistor is connected to
The grid of four transistors.
In the test pixel circuit of above-mentioned AMOLED, above-mentioned multiple thyristors include
The first transistor, transistor seconds, third transistor, the 4th transistor, wherein, above-mentioned first
Transistor, transistor seconds are PMOS transistor, and above-mentioned third transistor, the 4th transistor are
Nmos pass transistor；Above-mentioned Current Scan signal input part is connected to above-mentioned transistor seconds and the 3rd
The grid of transistor, above-mentioned LED control signal input is connected to above-mentioned the first transistor and the 4th
The grid of transistor, above-mentioned the first transistor, the source electrode of transistor seconds be connected to power end, on
State the first transistor, the drain electrode of transistor seconds is connected to above-mentioned front-seat scanning signal input part, on
The drain electrode stating third transistor is connected to above-mentioned front-seat scanning signal input part, above-mentioned third transistor
Source electrode be connected to the drain electrode of above-mentioned 4th transistor, the source electrode of above-mentioned 4th transistor is connected to pre-
If voltage end.
In the test pixel circuit of above-mentioned AMOLED, above-mentioned pixel driver module include 6 thin
Film field-effect transistor, an electric capacity and an OLED.
In the test pixel circuit of above-mentioned AMOLED, above-mentioned 6 TFTs are
PMOS transistor.
The test pixel circuit of the AMOLED according to the present invention, by arranging an and not circuit
Module, front-seat scanning signal SN-1 does not needs additional input signal, therefore, is utilizing independent probes
When test pixel circuit is measured, it is not necessary to front row scanning signal SN-1 is measured,
Decrease independent probes number required during measurement, thus reduce the cost of corollary equipment.
Brief description
Fig. 1 is the circuit of the test pixel circuit representing a kind of displayer of the prior art
Figure.
Fig. 2 is LED control signal, the Current Scan letter representing the test pixel circuit shown in Fig. 1
Number and the timing waveform of front-seat scanning signal.
Fig. 3 is the block diagram of the test pixel circuit of the AMOLED of the present invention.
Fig. 4 is the circuit diagram for realizing NAND Logic relation of first embodiment of the present invention.
Detailed in the case that Fig. 5 is to represent the test pixel circuit being applied to the circuit of Fig. 4 shown in Fig. 3
Thin circuit diagram.
Fig. 6 is another circuit for realizing NAND Logic relation of second embodiment of the present invention
Figure.
Detailed description of the invention
Below, referring to the drawings embodiments of the present invention are described in detail.
In figures in the following, for the reference that identical or corresponding part mark is identical, and
The repetitive description thereof will be omitted.
Fig. 2 is LED control signal, the Current Scan letter representing the test pixel circuit shown in Fig. 1
Number and the timing waveform of front-seat scanning signal.
As in figure 2 it is shown, be high level at Current Scan signal SN and LED control signal EN
When 1, front-seat scanning signal SN-1 is low level 0；Current Scan signal SN be low level the 0th,
When LED control signal EN is high level 1, front-seat scanning signal SN-1 is high level 1；Working as
Front scanning signal SN is high level when the 1st, LED control signal EN is low level 0, front-seat scanning
Signal SN-1 is high level 1；It is at Current Scan signal SN and LED control signal EN
During low level 0, front-seat scanning signal SN-1 is high level 1.It follows that front-seat scanning signal
NAND Logic relation is met between SN-1 and Current Scan signal SN, LED control signal EN, i.e.
Utilize such logical relation, as illustrated in fig. 3, at the test pixel circuit of AMOLED
Current Scan signal input part SN, LED control signal input EN defeated with front-seat scanning signal
Enter to hold one and not circuit of connection between SN-1.Specifically, the AMOLED shown in Fig. 3
Test pixel circuit include a pixel driver module 1 and an and not circuit module 2.By
In the existence of and not circuit module 2, believe in Current Scan signal input part SN, light emitting control
All the time NAND Logic relation is met between number input EN and front-seat scanning signal input part SN-1,
Therefore, when utilizing TEG measurement platform to measure, it is not necessary to measure front row scanning signal input
The signal of end SN-1, decreases independent probes number required during measurement.
In the present invention, above-mentioned and not circuit module 2 is made up of multiple thyristors.
Below, with reference to Fig. 4,5 pairs of first embodiment of the invention be used for realize above-mentioned NAND Logic
The physical circuit of circuit module 2 illustrates.
Fig. 4 is the circuit diagram for realizing NAND Logic relation of first embodiment of the present invention.
Detailed in the case that Fig. 5 is to represent the test pixel circuit being applied to the circuit of Fig. 4 shown in Fig. 3
Thin circuit diagram.
In the present embodiment, as shown in Figure 4, two PMOS transistor, two NMOS are used
Transistor realizes and not circuit.
In the diagram, A, B are two signal input parts, and VDD is power end.T7, T8 are PMOS
Transistor, T9, T10 are nmos pass transistor.Input signal A is connected to PMOS transistor
The grid of T8 and the grid of nmos pass transistor T9, input signal B is connected to PMOS transistor
The grid of T7 and the grid of nmos pass transistor T10.In addition, transistor T7 and transistor T8
Source electrode be connected to power end VDD, it is defeated that the drain electrode of transistor T7 and transistor T8 is connected to signal
Going out and holding Output, the drain electrode of transistor T9 is connected to signal output part Output, and its source electrode is connected to
The drain electrode of transistor T10, the source ground of transistor T10.
Conducting when due to PMOS transistor there is input low level and the property of cut-off during input high level
Matter, conducting when nmos pass transistor has an input high level and the character of cut-off during input low level,
Therefore, in the diagram, when input signal A, B are high level 1, two PMOS crystal
Pipe T7, T8 are not turned on, two nmos pass transistor T9, T10 conductings.Due to power end VDD
It is connected to the source electrode of PMOS transistor T7 and T8, and the source electrode of nmos pass transistor T10 connects
Ground, therefore, signal output part Output is low level 0.When input signal A be high level the 1st,
When input signal B is low level 0, PMOS transistor T7, nmos pass transistor T9 conducting,
PMOS transistor T8, nmos pass transistor T10 are not turned on, therefore, and signal output part Output
Voltage identical with the voltage of power end VDD, be high level 1.When input signal A is low level
0th, when input signal B is high level 1, PMOS transistor T8, nmos pass transistor T10 lead
Logical, PMOS transistor T7, nmos pass transistor T9 are not turned on, therefore, and signal output part Output
Voltage identical with the voltage of power end VDD, be high level 1.When input signal A, B are
During low level 0, two PMOS transistor T7, T8 conducting, two nmos pass transistor T9,
T10 is not turned on, and therefore, the voltage of signal output part Output is identical with the voltage of power end VDD,
For high level 1.
That is, input signal A, B and output signal Output meets NAND Logic relation, with Fig. 1
In the logic of LED control signal EN, Current Scan signal SN and front-seat scanning signal SN-1
Relation is identical.
Utilize such logical relation, the and not circuit shown in Fig. 4 is connected to the electricity of Fig. 3
Road obtains the circuit shown in Fig. 5.Specifically, in Figure 5, by the NAND Logic electricity of Fig. 4
The power end VDD on road is connected to and the power end VDD in Fig. 3, by input signal A of Fig. 4
It is connected with the scanning signal end SN in Fig. 3, by input signal B of Fig. 4 and sending out in Fig. 3
Optical control signal EN is connected, by the front-seat scanning letter in the output Output of Fig. 4 and Fig. 3
Number end SN-1 be connected.
As described above the and not circuit shown in Fig. 4 is connected to AMOLED pixel to survey
In examination circuit, scanning signal SN, LED control signal EN and front-seat scanning signal SN-1 it
Between meet NAND Logic relation all the time, therefore, front-seat scanning signal SN-1 does not needs additionally to input letter
Number.Therefore, when utilizing independent probes to measure test pixel circuit, as long as measuring number
According to the signal of signal end DM, the signal of Current Scan signal end SN, power end VDD signal,
The signal of predeterminated voltage end VIN, the signal of LED control signal input EN and output
The signal of Output, compared with the test pixel circuit shown in Fig. 1, decreases measurement when institute
The independent probes number needing.
In addition, in the and not circuit shown in Fig. 4, it is also possible to by nmos pass transistor T10
Source electrode be connected to predeterminated voltage end VIN.Now, the voltage of predeterminated voltage end VIN is less than power supply
Voltage Vdd.
Below, with reference to Fig. 6 illustrate second embodiment of the present invention be used for realize that NAND Logic is closed
Another circuit diagram of system.
In addition, in the circuit diagram of Fig. 6, the point different from the circuit diagram shown in Fig. 4 is only that
The source electrode of nmos pass transistor T10 and grid short circuit.
Similarly, in figure 6, when input signal A, B are high level 1, two PMOS
Transistor T7, T8 are not turned on, two nmos pass transistor T9, T10 conductings, therefore, and signal
Output Output is low level 0.When input signal A be high level the 1st, input signal B be low
During level 0, PMOS transistor T7, nmos pass transistor T9 conducting, PMOS transistor T8,
Nmos pass transistor T10 is not turned on, therefore, and the voltage of signal output part Output and power end
The voltage of VDD is identical, is high level 1.When input signal A is low level the 0th, input signal B
During for high level 1, PMOS transistor T8, nmos pass transistor T10 conducting, PMOS crystal
Pipe T7, nmos pass transistor T9 are not turned on, therefore, and the voltage of signal output part Output and electricity
The voltage of source VDD is identical, is high level 1.When input signal A, B are low level 0,
Two PMOS transistor T7, T8 turn on, and two nmos pass transistors T9, T10 are not turned on,
Therefore, the voltage of signal output part Output is identical with the voltage of power end VDD, is high level 1.
Therefore, similarly, in the circuit shown in Fig. 6, input signal A, B and output signal
Also NAND Logic relation is met between Output.
Utilize such logical relation, be connected to the and not circuit shown in Fig. 6 shown in Fig. 1
Test pixel circuit in.Its block diagram is identical with the block diagram shown in Fig. 4, NAND circuitPhase
When in the and not circuit shown in Fig. 6.
As described above the and not circuit shown in Fig. 6 is connected to AMOLED pixel to survey
In examination circuit, scanning signal SN, LED control signal EN and front-seat scanning signal SN-1 it
Between meet NAND Logic relation all the time, therefore, front-seat scanning signal SN-1 does not needs additionally to input letter
Number.Therefore, when utilizing independent probes to measure test pixel circuit, as long as measuring number
According to the signal of signal end DM, the signal of Current Scan signal end SN, power end VDD signal,
The signal of predeterminated voltage end VIN, the signal of LED control signal input EN and output
The signal of Output, compared with the test pixel circuit shown in Fig. 1, decreases measurement when institute
The independent probes number needing.
Above, illustrate to utilize two PMOS transistor and two NMOS with reference to Fig. 4, Fig. 6
Transistor realizes two embodiments of an and not circuit.But, at Fig. 4, Fig. 6
In, it is possible to use single MOS circuit, now into, nmos pass transistor is changed Fei Men &PMOS
Transistor can realize NAND Logic relation.
Although in addition, be illustrated as a example by NAND Logic module in the present invention, but root
According to needs, it would however also be possible to employ other application of logic circuit module.
Present invention can be suitably applied to the even numbers probe TEG board that major part mechanism uses, to reduce utilization
Need the number of probes being equipped with when test pixel circuit is measured by TEG measurement platform, thus reduce
Corollary equipment cost.
Claims (7)
1. the test pixel circuit of an AMOLED, it is characterised in that
Including pixel driver module and application of logic circuit module；
Above-mentioned pixel driver module be connected with power end, data signal end, Current Scan signal end,
Front-seat scanning signal end, predeterminated voltage end, LED control signal input and output；
The signal of the LED control signal input with above-mentioned pixel driver module for the above-mentioned application of logic circuit module
Connect as input signal, the output of above-mentioned application of logic circuit module with the signal of Current Scan signal input part
Receive the front-seat scanning signal input part of above-mentioned pixel driver module；
Above-mentioned application of logic circuit module is and not circuit module.
2. the test pixel circuit of AMOLED according to claim 1, it is characterised in that
Above-mentioned application of logic circuit module includes the logic circuit being made up of multiple thyristors.
3. the test pixel circuit of AMOLED according to claim 2, it is characterised in that
Above-mentioned multiple thyristor includes the first transistor, transistor seconds, the 3rd crystal
Pipe, the 4th transistor, wherein, above-mentioned the first transistor, transistor seconds are PMOS transistor,
Above-mentioned third transistor, the 4th transistor are nmos pass transistor；
Above-mentioned Current Scan signal input part is connected to the grid of above-mentioned transistor seconds and third transistor
Pole, above-mentioned LED control signal input is connected to above-mentioned the first transistor and the grid of the 4th transistor
Pole, above-mentioned the first transistor, the source electrode of transistor seconds are connected to power end, above-mentioned first crystal
Pipe, the drain electrode of transistor seconds are connected to above-mentioned front-seat scanning signal input part, above-mentioned 3rd crystal
The drain electrode of pipe is connected to above-mentioned front-seat scanning signal input part, and the source electrode of above-mentioned third transistor connects
To the drain electrode of above-mentioned 4th transistor, the source ground of above-mentioned 4th transistor.
4. the test pixel circuit of AMOLED according to claim 2, it is characterised in that
Above-mentioned multiple thyristor includes the first transistor, transistor seconds, the 3rd crystal
Pipe, the 4th transistor, wherein, above-mentioned the first transistor, transistor seconds are PMOS transistor,
Above-mentioned third transistor, the 4th transistor are nmos pass transistor；
Above-mentioned Current Scan signal input part is connected to the grid of above-mentioned transistor seconds and third transistor
Pole, above-mentioned LED control signal input is connected to above-mentioned the first transistor and the grid of the 4th transistor
Pole, above-mentioned the first transistor, the source electrode of transistor seconds are connected to power end, above-mentioned first crystal
Pipe, the drain electrode of transistor seconds are connected to above-mentioned front-seat scanning signal input part, above-mentioned 3rd crystal
The drain electrode of pipe is connected to above-mentioned front-seat scanning signal input part, and the source electrode of above-mentioned third transistor connects
To the drain electrode of above-mentioned 4th transistor, the source electrode of above-mentioned 4th transistor is connected to the 4th transistor
Grid.
5. the test pixel circuit of AMOLED according to claim 2, it is characterised in that
Above-mentioned multiple thyristor be the first transistor, transistor seconds, third transistor,
4th transistor, wherein, above-mentioned the first transistor, transistor seconds are PMOS transistor, on
State third transistor, the 4th transistor is nmos pass transistor；
Above-mentioned Current Scan signal input part is connected to the grid of above-mentioned transistor seconds and third transistor
Pole, above-mentioned LED control signal input is connected to above-mentioned the first transistor and the grid of the 4th transistor
Pole, above-mentioned the first transistor, the source electrode of transistor seconds are connected to power end, above-mentioned first crystal
Pipe, the drain electrode of transistor seconds are connected to above-mentioned front-seat scanning signal input part, above-mentioned 3rd crystal
The drain electrode of pipe is connected to above-mentioned front-seat scanning signal input part, and the source electrode of above-mentioned third transistor connects
To the drain electrode of above-mentioned 4th transistor, the source electrode of above-mentioned 4th transistor is connected to predeterminated voltage end.
6. the test pixel circuit of AMOLED according to any one of claim 1 to 5,
It is characterized in that,
Above-mentioned pixel driver module includes 6 TFTs, an electric capacity and one
OLED。
7. the test pixel circuit of AMOLED according to claim 6, it is characterised in that
Above-mentioned 6 TFTs are PMOS transistor.
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| CN105702186B (en) * | 2014-11-28 | 2018-11-20 | 上海和辉光电有限公司 | The method for measurement of the test pixel circuit of AMOLED |
| CN114035020A (en) * | 2021-09-29 | 2022-02-11 | 重庆康佳光电技术研究院有限公司 | Back board circuit detection device and method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1603928A (en) * | 2004-11-12 | 2005-04-06 | 友达光电股份有限公司 | Liquid crystal display panel and testing method therefor |
| CN1731205A (en) * | 2005-08-31 | 2006-02-08 | 友达光电股份有限公司 | Test circuit for panel display device |
| CN202421235U (en) * | 2011-12-20 | 2012-09-05 | 北京京东方光电科技有限公司 | Probe assembler and test device applied to thin film transistor (TFT) test |
| CN103268743A (en) * | 2012-12-26 | 2013-08-28 | 厦门天马微电子有限公司 | Test circuit and test method for pixel array, display panel and display |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101359024B (en) * | 2008-09-23 | 2012-05-30 | 友达光电（苏州）有限公司 | Test circuit for display panel of electronic device, and display panel |
| US9466244B2 (en) * | 2012-02-08 | 2016-10-11 | Joled Inc. | EL display device and production method therefor |
-
2014
- 2014-06-12 CN CN201410261107.1A patent/CN104036730B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1603928A (en) * | 2004-11-12 | 2005-04-06 | 友达光电股份有限公司 | Liquid crystal display panel and testing method therefor |
| CN1731205A (en) * | 2005-08-31 | 2006-02-08 | 友达光电股份有限公司 | Test circuit for panel display device |
| CN202421235U (en) * | 2011-12-20 | 2012-09-05 | 北京京东方光电科技有限公司 | Probe assembler and test device applied to thin film transistor (TFT) test |
| CN103268743A (en) * | 2012-12-26 | 2013-08-28 | 厦门天马微电子有限公司 | Test circuit and test method for pixel array, display panel and display |
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Address after: 201506, No. nine, No. 1568, Jinshan Industrial Zone, Shanghai, Jinshan District Patentee after: Shanghai Hehui optoelectronic Co., Ltd Address before: 201500, building two, building 100, 1, Jinshan Industrial Road, 208, Shanghai, Jinshan District Patentee before: EverDisplay Optronics (Shanghai) Ltd. |
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