CN104022220A - GaN Gunn diode based on AlGaN/GaN superlattice electron emission layer and manufacturing method - Google Patents
GaN Gunn diode based on AlGaN/GaN superlattice electron emission layer and manufacturing method Download PDFInfo
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- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 47
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 238000002161 passivation Methods 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 35
- 238000005530 etching Methods 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 29
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 16
- 238000001020 plasma etching Methods 0.000 claims description 15
- 238000005516 engineering process Methods 0.000 claims description 14
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 11
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 238000004151 rapid thermal annealing Methods 0.000 claims description 2
- 230000017525 heat dissipation Effects 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 26
- 229910052757 nitrogen Inorganic materials 0.000 description 13
- 239000007789 gas Substances 0.000 description 10
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 9
- 229910000077 silane Inorganic materials 0.000 description 8
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000001259 photo etching Methods 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002068 genetic effect Effects 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
The invention discloses a GaN Gunn diode based on an AlGaN/GaN superlattice electron emission layer and a manufacturing method of the GaN Gunn diode. The GaN Gunn diode and the manufacturing method mainly aim at solving the problems that an existing Gunn device is low in power and poor in heat dissipation performance. The diode comprises a main part and an auxiliary part. The main part comprises a SiC substrate, an AlN nucleating layer, an n+GaN cathode ohmic contact layer, the electron emission layer, an n-GaN active layer and an n+GaN anode ohmic contact layer from bottom to top. The auxiliary part comprises an annular electrode, a substrate electrode, a circular electrode, a passivation layer, an open hole and a through hole. An AlGaN/GaN superlattice is adopted for the electron emission layer and has four to six cycles, the thickness of a GaN layer and the thickness of an AlGaN layer in each cycle both range from 10 nm to 20 nm, and an Al component in the AlGaN layer is linearly and gradually changed to 15% from 0% from bottom to top. The length of a dead zone can be remarkably reduced, dislocation concentration is reduced, and the GaN Gunn diode is suitable for terahertz frequency band work.
Description
Technical field
The invention belongs to technical field of microelectronic devices, particularly the Gunn diode of wide band gap semiconducter GaN material, can be used for high frequency, high power device making.
Technical background
Because GaN has that energy gap is large, stable chemical nature, disruptive field intensity be high, is difficult for the feature of hot intrinsic, therefore, for the manufacture of millimeter wave large power semiconductor device, GaN is considered to be the material getting a good chance of, and is also current study hotspot.GaAs compares with conventional I II-V compound semiconductor, the negative resistance oscillation fundamental frequency of GaN reaches 750GHz, 140GHz considerably beyond GaAs, in addition, electronic device for GaN base, its power output also exceeds 1～2 order of magnitude than GaAs base electron device, can reach even several watts of hundreds of milliwatts.Therefore, the millimeter wave high power device of research GaN base is significant.
Some n that proposed at present
+/ n
-/ n
+the gunn device structure main distinction is at n
-the doped forms of active area, as Uniform Doped active area structure, the non-uniform doping active area structure of insertion groove (notch) doped layer, the non-uniform doping active area structure adulterating with N-shaped spike.But " dead band " length of Uniform Doped active area structure and notch doped structure is larger, for the electrical characteristics of improving device, be not obvious especially.Structure with the doping of N-shaped spike although improve the problem of " dead band " length, cannot effectively reduce dislocation concentration in heteroepitaxy.
In order to realize when reducing " dead band " length, reduce dislocation concentration.In bibliographical information in recent years, proposed the concept of AlGaN electron emission layer, but what wherein mostly adopt is individual layer or double-deck structure.Such as adopting individual layer AlN or AlGaN as electron emission layer, although this structure can play the effect that dislocation is bent bury in oblivion, can only once filter, can not significantly reduce dislocation concentration.Also someone has proposed AlGaN/GaN double-decker, but this structure does not consider AlGaN to adopt gradual change Al component, owing to there being larger lattice mismatch between GaN and AlGaN, once Stress Release, in electron emission layer, will introduce new dislocation, affect the electrical characteristics of THz devices.
Summary of the invention
The object of the present invention is to provide a kind of GaN Gunn diode and manufacture method based on AlGaN/GaN superlattice electron emission layer, its outstanding feature is both can reduce " dead band " length to improve domain stability, can when dislocation is realized to multiple times of filtration, reduce again lattice mismatch degree to improve device active region crystalline quality.
For achieving the above object, technical scheme of the present invention is as follows:
One. based on AlGaN/GaN superlattice electron emission layer GaN Gunn diode, comprise that main part and auxiliary body divide, this main part comprises from bottom to top: SiC substrate, AlN nucleating layer, n
+gaN negative electrode ohmic contact layer, electron emission layer, n
-gaN active layer and n
+gaN anode ohmic contact layer; Auxiliary body divides and comprises annular electrode, underlayer electrode, circular electrode, passivation layer, perforate and through hole; Annular electrode and underlayer electrode, as the negative electrode of device, lay respectively at n
+the top of GaN negative electrode ohmic contact layer and the below of SiC substrate, circular electrode is positioned at n as the anode of device
+the top of GaN anode ohmic contact layer, passivation layer is positioned at the top of annular electrode and circular electrode; Perforate and through hole lay respectively in passivation layer and SiC substrate, and through hole is connected annular electrode with underlayer electrode, form longitudinal device architecture;
Described electron emission layer adopts AlGaN/GaN superlattice, these superlattice are provided with 4～6 cycles, GaN layer thickness in each cycle is 10-20nm, and AlGaN layer thickness is 10-20nm, and the Al concentration of component in AlGaN layer is from bottom to up by 0% linear gradient to 15%.
As preferably, described SiC substrate is the semi-insulating type substrate of 4H-SiC, the semi-insulating type substrate of 6H-SiC or 6H-SiC conducting type substrate.
As preferably, the thickness of described AlN nucleating layer is 30～60nm.
As preferably, described n
+the thickness of GaN negative electrode ohmic contact layer is 100～400nm, and doping content is 1～2 * 10
18cm
-3.
As preferably, described n
-the thickness of GaN active layer is 0.5～2 μ m, and doping content is 0.5～2 * 10
17cm
-3.
As preferably, described n
+the thickness of GaN anode ohmic contact layer is 100～400nm, and doping content is 1～2 * 10
18cm
-3.
Two. make the method for above-mentioned GaN Gunn diode, comprise the steps:
(1) epitaxial growth AlN nucleating layer:
Adopt the method for metal organic chemical vapor deposition MOCVD, on N-shaped or insulated type SiC substrate, the AlN nucleating layer that epitaxial growth thickness is 30～90nm;
(2) epitaxial growth n
+gaN negative electrode ohmic contact layer:
On the AlN nucleating layer of extension, by the method for metal organic chemical vapor deposition MOCVD, epitaxial growth doping content is 1～2 * 10
18cm
-3, the thickness n that is 100～400nm
+gaN negative electrode ohmic contact layer;
(3) epitaxial growth electron emission layer:
3.1) at the n of extension
+on GaN negative electrode ohmic contact layer, utilize molecular beam epitaxy MBE technology, first epitaxial growth thickness is 10-20nm, and Al concentration of component is from bottom to up by the AlGaN layer of 0% linear gradient to 15%; Continue to adopt MBE technology, the GaN layer that epitaxial growth thickness is 10-20nm, this GaN layer and AlGaN layer form the one-period of superlattice;
3.2) repeated growth 3-5 the cycle, form electron emission layer.
(4) epitaxial growth n
-gaN active layer:
On AlGaN/GaN superlattice electron emission layer, utilize the method for metal organic chemical vapor deposition MOCVD, epitaxial growth doping content is 0.5～2 * 10
17cm
-3, thickness is the n of 0.5～2 μ m
-gaN active layer;
(5) epitaxial growth n
+gaN anode ohmic contact layer:
At described n
-on GaN active layer, utilize the method for metal organic chemical vapor deposition MOCVD, epitaxial growth doping content is 1～2 * 10
18cm
-3, the thickness n that is 100～400nm
+gaN anode ohmic contact layer;
(6) etching forms large round table surface:
Adopt reactive ion etching technology to carry out etching to the epitaxial loayer on SiC substrate, be etched to the upper surface of SiC substrate always, take and form diameter as d
0large round table surface, 30 μ m<d wherein
0<60 μ m;
(7) etching forms small circular table top:
On described large round table surface, continue to adopt lithographic technique, formation diameter is d
1small circular table top, etching depth is to n
+gaN negative electrode ohmic contact layer, 10 μ m<d
1<20 μ m;
(8) form circular electrode and annular electrode:
8.1) adopt vacuum electron beam evaporation technique, the n exposing in small circular table top and etching
+deposit Ti/Al/Ni/Au multiple layer metal on GaN negative electrode ohmic contact layer,
8.2) adopt metal lift-off techniques, on small circular table top, form circular electrode, the anode of Gunn diode forms annular electrode in negative electrode ohmic contact aspect;
(9) form the ohmic contact of metal and GaN:
At the temperature of 950 ℃, pass into Ar
2the time of carrying out is the rapid thermal annealing in 50 seconds, makes n
+between GaN and circular electrode metal and annular electrode metal, form ohmic contact;
(10) etching forms through hole:
Adopt reactive ion etching technology, in SiC substrate back etching, form n through hole, n>=1, etching depth is to annular electrode;
(11) form the negative electrode of GaN Gunn diode:
The SiC through hole and the SiC substrate back deposit Ti/Al/Ni/Au multiple layer metal that in etching, form, form anode substrate electrode, and underlayer electrode forms Gunn diode negative electrode together with annular connecting electrode;
(12) epitaxial growth SiN passivation layer expose the anode of diode:
12.1) the SiN passivation layer that the method for employing PECVD is 200～400nm at device front deposition thickness,
12.2) adopt reactive ion etching technology on small circular table top, to form perforate 11, expose Gunn diode anode.
Tool of the present invention has the following advantages:
A. the present invention is owing to having adopted Al content gradually variational AlGaN/GaN superlattice structure can play the effect of thermionic emission as electron emission layer.
Because AlGaN is different from the energy gap of GaN, therefore, under the effect of polarity effect, GaN mono-side of AlGaN/GaN heterojunction can form two-dimensional electron gas; Once the electronics in two-dimensional electron gas obtains enough energy, will shake off the constraint of potential well, to active area, inject high energy electron, thereby make device operating state enter into negative differential resistance region, form gunn vibration; The gunn device structure obtaining based on this layer can reduce " dead band " length significantly, shortens the length of device active region, thereby improves operating frequency and the conversion efficiency of device.
B. the present invention adopts Al content gradually variational AlGaN/GaN superlattice structure as electron emission layer, can play the effect that repeatedly reduces dislocation concentration, reduces lattice mismatch.
Because the every AlGaN/GaN structure through one-period of dislocation first order buckling will occur, buries in oblivion, thereby realize repeatedly burying in oblivion of dislocation, reach the object of remarkable reduction dislocation concentration; And the present invention has adopted the design of linear gradient Al component, the lattice mismatch between GaN and AlGaN is minimized, thereby avoided the generation of misfit dislocation, has improved the crystalline quality of GaN material.
C. GaN Gunn diode of the present invention has electrode structure longitudinally, and the packaging technology of compatible traditional Gunn diode, is very beneficial for the installation in high-frequency resonant cavity and makes Terahertz oscillation component completely.
Accompanying drawing explanation
Fig. 1 is the sectional structure chart of GaN base Gunn diode of the present invention;
Fig. 2 is the vertical view of Fig. 1;
Fig. 3 is the AlGaN/GaN superlattice electronics genetic horizon structure for amplifying schematic diagram in the present invention;
Fig. 4 is the process chart that the present invention makes GaN Gunn diode.
Embodiment
See figures.1.and.2, GaN Gunn diode device architecture of the present invention comprises that main part and auxiliary body divide.Main part is from bottom to top: SiC substrate 1, AlN nucleating layer 2, n
+gaN negative electrode ohmic contact layer 3, electron emission layer 4, n
-gaN active layer 5 and n
+gaN anode ohmic contact layer 6; Auxiliary body divides and comprises: annular electrode 7, underlayer electrode 8, circular electrode 9, passivation layer 10, perforate 11 and through hole 12.Wherein:
SiC substrate 1 can be device physical support is provided, and also can play the effect of heat radiation simultaneously, has through hole 12 on SiC substrate 1, the number of through hole 12 is n, n>=1, for annular electrode 7 is connected with underlayer electrode 8, forms longitudinal device architecture; The thickness of AlN nucleating layer 2 is 30～60nm, can play the effect that reduces dislocation density; n
+the doping content of GaN negative electrode ohmic contact layer 3 is 1～2 * 10
18cm
-3, thickness is 100～400nm, is provided with large round table surface on this layer, the diameter of table top is d
0, 30 μ m<d
0<60 μ m; n
-the doping content that GaN gets over layer 5 is 0.5～2 * 10
17cm
-3, thickness is 100～400nm, the doping content of this layer and thickness will determine operating frequency and the mode of operation of Gunn diode; n
+the doping content of GaN anode ohmic contact layer 6 is 1～2 * 10
18cm
-3, thickness is 100～400nm, is provided with small circular table top on this layer, the diameter of table top is d
1, 10 μ m<d
1<20 μ m.As shown in Figure 2, the anode that central circular is diode, the annulus in outside is annular electrode 7, through hole 12 and underlayer electrode 8 do not draw in the drawings.
N
+the top deposit Ti/Al/Ni/Au multiple layer metal of GaN anode ohmic contact layer 6 forms circular electrode 9, forms the anode of device; Annular electrode 7 and underlayer electrode 8 lay respectively at n
+the top of GaN negative electrode ohmic contact layer 3 and the below of SiC substrate 1, the two is jointly as the negative electrode of device.
Electron emission layer 4 adopts AlGaN/GaN superlattice, as shown in Figure 3, these superlattice have 4～6 cycles, AlGaN layer thickness in each cycle is 10-20nm, GaN layer thickness is 10-20nm, in AlGaN layer, Al concentration of component is from bottom to up by 0% linear gradient to 15%, and the multiple times of filtration with realizing dislocation, minimizes lattice mismatch.
With reference to Fig. 4, the manufacture method of GaN Gunn diode of the present invention, provides following three kinds of embodiment:
Embodiment 1: the GaN Gunn diode of making the semi-insulating type substrate of 4H-SiC.
Step 1, selecting diameter is the semi-insulating type substrate of 4H-SiC of 2 inches, attenuate is carried out in the back side, until substrate thickness is 150 μ m.
Step 2, puts into MOCVD reative cell by the semi-insulating type substrate of 4H-SiC, and setting growth temperature is 600 ℃, in reative cell, passes into trimethyl aluminium and nitrogen simultaneously, is keeping under the condition that pressure is 40Torr the AlN nucleating layer that growth thickness is 30nm.
Step 3, is elevated to 1000 ℃ by the substrate of the AlN nucleating layer of having grown, and in reative cell, passes into trimethyl gallium, nitrogen and N-shaped doped source-silane simultaneously, is keeping under the condition that pressure is 40Torr, and growth thickness is 100nm, and doping content is 1.0 * 10
18cm
-3n
+gaN negative electrode ohmic contact layer.
Step 4, the resulting sample of said process is put into MBE reative cell, in reative cell, pass into trimethyl gallium, nitrogen and trimethyl aluminium simultaneously, and the first linear metering that passes into that increases trimethyl aluminium, after stop passing into trimethyl aluminium, at pressure, be that 400Torr, temperature are under the condition of 1000 ℃, the AlGaN/GaN superlattice in 4 cycles of epitaxial growth, AlGaN layer thickness in each cycle is 10nm, GaN layer thickness is 10nm, in AlGaN layer, Al concentration of component, from bottom to up by 0% linear gradient to 15%, forms electron emission layer.
Step 5, puts into MOCVD reative cell by the sample of the electron emission layer of growing, and setting air pressure is 40Torr, pass into trimethyl gallium, nitrogen and N-shaped doped source-silane simultaneously, in temperature, be that under the condition of 1000 ℃, epitaxial growth thickness is 0.5 μ m, doping content is 0.5 * 10
17cm
-3n
-gaN active layer.
Step 6, continue to adopt the mode of MOCVD, passes into trimethyl gallium, nitrogen and N-shaped doped source-silane simultaneously, keeping air pressure, is 40Torr, and temperature is that under the condition of 1000 ℃, epitaxial growth thickness is 100nm, and doping content is 1.0 * 10
18cm
-3n
+gaN negative electrode ohmic contact layer, forms GaN epitaxial layer.
Step 7 is taken out above-mentioned GaN epitaxial layer from MOCVD reative cell, carries out photoetching on GaN epitaxial layer, and forming diameter is the large circular mask pattern of 30 μ m, then adopts reactive ion etching technology, uses BCl
3/ Cl
2gas carries out etching to GaN epitaxial layer, till being etched to and exposing 4H-SiC substrate surface, forms large round table surface.
Step 8 is carried out photoetching on the large round table surface forming, and forming diameter is the coaxial small circular table top mask pattern of 10 μ m; Adopt again reactive ion etching technology, use BCl
3/ Cl
2gas carries out etching to large round table surface, and etching depth enters into n
+200nm in GaN negative electrode ohmic contact layer, forms small circular table top.
Step 9, evaporates Ti/Al/Ni/Au multiple layer metal with vacuum electron beam evaporation equipment successively at whole device surface, and thickness is respectively 30nm/120nm/50nm/160nm, through metal-stripping, forms circular electrode and annular electrode.
Step 10, in argon gas atmosphere, at the temperature of 950 ℃, carries out the quick thermal annealing process in 50 seconds to whole device, form GaN ohmic contact.
Step 11, carries out photoetching to the device after thermal annealing, and at the back side of 4H-SiC substrate, forming 4 diameters is the via mask figure of 10 μ m, then adopts the method for reactive ion RIE etching, uses BCl
3/ Cl
2gas carries out etching to SiC substrate, is etched to annular electrode surface always, forms through hole 12.
Step 12, with vacuum electron beam evaporation equipment, at the back side of 4H-SiC substrate, evaporate successively Ti/Al/Ni/Au multiple layer metal, thickness is respectively 30nm/120nm/50nm/200nm, through metal-stripping, form underlayer electrode, the through hole 12 injecting after metal is connected underlayer electrode with annular electrode, form the negative electrode of GaN Gunn diode.
Step 13, puts into PECVD reative cell by the sample after above-mentioned steps is processed, and to the silane and the nitrogen that pass in reative cell simultaneously, at pressure, is that 40Torr, temperature are under the condition of 1000 ℃, the SiN passivation layer that epitaxial growth thickness is 200nm.
Step 14, the method for employing RIE etching, uses CF
4gas carries out etching to SiN passivation layer, is etched to circular electrode surface always, forms perforate 11, exposes the anode of diode, completes the making of device, and the final Gunn diode tube core section forming as shown in Figure 1.
Embodiment 2: the GaN Gunn diode of making the semi-insulating type substrate of 6H-SiC.
Step 1, attenuate substrate:
Selecting diameter is the semi-insulating type substrate of 6H-SiC of 2 inches, attenuate is carried out in the back side, until substrate thickness is 150 μ m.
Step 2, epitaxial growth AlN nucleating layer:
Adopting the mode of MOCVD, is that 40Torr, temperature are under the condition of 650 ℃ keeping pressure, passes into trimethyl aluminium and nitrogen, the AlN nucleating layer that is 40nm at the semi-insulating type Grown of 6H-SiC thickness simultaneously.
Step 3, epitaxial growth n
+gaN negative electrode ohmic contact layer:
The mode that adopts MOCVD, is elevated to 1060 ℃ by temperature, under the condition that maintenance pressure is 40Torr, passes into trimethyl gallium, nitrogen and N-shaped doped source-silane simultaneously, and epitaxial growth thickness is 150nm, and doping content is 1.5 * 10
18cm
-3n
+gaN negative electrode ohmic contact layer.
Step 4, epitaxial growth electron emission layer:
4.1) by the n that grown
+the sample of GaN negative electrode ohmic contact layer is put into molecular beam epitaxy MBE reative cell, and setting pressure is 500Torr, and temperature is 1060 ℃,
4.2) in MBE reative cell, pass into trimethyl gallium, nitrogen and trimethyl aluminium simultaneously, and trimethyl aluminium pass into that metering is linear to be increased, epitaxial growth thickness is 15nm, Al concentration of component is by the AlGaN layer of 0% linear gradient to 15%;
4.3) to MBE reative cell, pass into trimethyl gallium and nitrogen more simultaneously, do not pass into trimethyl aluminium, the GaN layer that epitaxial growth thickness is 15nm; This AlGaN layer and GaN layer have formed the one-period of superlattice; Finally 4 cycles of repeated growth again, obtain electron emission layer.
Step 5, epitaxial growth n
-gaN active layer:
The sample of the electron emission layer of having grown is put into MOCVD reative cell, the air pressure of setting in reative cell is 40Torr, passes into trimethyl gallium, nitrogen and N-shaped doped source-silane simultaneously, keeping temperature, is under the condition of 1060 ℃, epitaxial growth thickness is 1 μ m, and doping content is 1 * 10
17cm
-3n
-gaN active layer.
Step 6, epitaxial growth n
+gaN negative electrode ohmic contact layer:
The mode that continue to adopt MOCVD passes into trimethyl gallium, nitrogen and N-shaped doped source-silane simultaneously, keeping air pressure, is 40Torr, and temperature is that under the condition of 1060 ℃, epitaxial growth thickness is 150nm, and doping content is 1.5 * 10
18cm
-3n
+gaN negative electrode ohmic contact layer, forms GaN epitaxial layer.
Step 7, etching forms large round table surface:
7.1) adopt the method for photoetching, on GaN epitaxial layer, forming diameter is the large circular mask pattern of 40 μ m;
7.2) adopt reactive ion etching technology, use BCl
3/ Cl
2gas carries out etching to GaN epitaxial layer, till being etched to and exposing 4H-SiC substrate surface, forms large round table surface.
Step 8, etching forms small circular table top:
8.1) adopt the method for photoetching, on large round table surface, form the coaxial small circular table top mask pattern that diameter is 15 μ m; 8.2) adopt reactive ion etching RIE technology, use BCl
3/ Cl
2gas carries out etching to large round table surface, and etching depth enters into n
+200nm in GaN negative electrode ohmic contact layer, forms small circular table top.
Step 9, forms circular electrode and annular electrode:
9.1) adopt the mode of vacuum electronic beam evaporation, at whole device surface, evaporate successively Ti/Al/Ni/Au multiple layer metal, thickness is respectively 35nm/125nm/55nm/165nm,
9.2) adopt metal lift-off techniques, form circular electrode and annular electrode.
Step 10, the ohmic contact of formation metal and GaN:
In argon gas atmosphere, at the temperature of 950 ℃, whole device is carried out to the quick thermal annealing process in 50 seconds, form GaN ohmic contact.
Step 11, etching forms through hole 12:
11.1) adopt the method for photoetching, at the back side of 6H-SiC substrate, form 4 via mask figures that diameter is 10 μ m,
11.2) adopt reactive ion RIE lithographic technique, use BCl
3/ Cl
2gas carries out etching to SiC substrate, is etched to annular electrode surface always, forms through hole 12.
Step 12, the negative electrode of formation GaN Gunn diode:
12.1) adopt the mode of vacuum electronic beam evaporation, at the back side of 6H-SiC substrate, evaporate successively thickness and be the Ti of 35nm, the Ni of the Al of 125nm, 55nm and the Au of 200nm,
12.2) adopt metal lift-off techniques, form underlayer electrode, the through hole 12 injecting after metal is connected underlayer electrode with annular electrode, forms the negative electrode of GaN Gunn diode.
Step 13, epitaxial growth SiN passivation layer:
Adopt the mode of PECVD, the silane simultaneously passing into and nitrogen, be that 40Torr, temperature are under the condition of 1000 ℃ at pressure, the SiN passivation layer that epitaxial growth thickness is 200nm on the sample after above-mentioned steps is processed.
Step 14, expose the anode of diode:
Adopt the method for RIE etching, use CF
4gas carries out etching to SiN passivation layer, is etched to circular electrode surface always, forms perforate 11, exposes the anode of diode, completes the making of device, and the final Gunn diode tube core section forming as shown in Figure 1.
Embodiment 3: the GaN Gunn diode of making 6H-SiC conducting type substrate.
Steps A, attenuate substrate:
Selecting diameter is the 6H-SiC conducting type substrate of 2 inches, attenuate is carried out in the back side, until substrate thickness is 150 μ m.
Step B, makes AlN nucleating layer and n
+gaN negative electrode ohmic contact layer:
In MOCVD reative cell, maintenance pressure is that 60Torr, temperature are, under the condition of 650 ℃, to pass into trimethyl aluminium and nitrogen, the AlN nucleating layer that is 90nm at 6H-SiC conducting type Grown thickness simultaneously; Continue to adopt MOCVD technique, temperature is elevated to 1100 ℃, maintenance pressure is 60Torr, then passes into trimethyl gallium, nitrogen and N-shaped doped source-silane, epitaxial growth n simultaneously
+gaN negative electrode ohmic contact layer, the thickness of this ohmic contact layer is 400nm, doping content is 2 * 10
18cm
-3.
Step C, epitaxial growth electron emission layer:
By the n that grown
+the sample of GaN negative electrode ohmic contact layer is put into molecular beam epitaxy MBE reative cell, in reative cell, pass into trimethyl gallium, nitrogen and trimethyl aluminium simultaneously, and the metering that passes into of trimethyl aluminium first stops passing into after linear increasing, keeping pressure, be 600Torr, temperature is under the condition of 1100 ℃, the AlGaN/GaN superlattice in 6 cycles of epitaxial growth, AlGaN layer thickness in each cycle is 20nm, GaN layer thickness is 20nm, in AlGaN layer, Al concentration of component, from bottom to up by 0% linear gradient to 15%, forms electron emission layer.
Step D, epitaxial growth n
-gaN active layer and n
+gaN anode ohmic contact layer:
The sample of the electron emission layer of having grown is put into MOCVD reative cell, setting air pressure is 60Torr, simultaneously to MOCVD reative cell, passes into trimethyl gallium, nitrogen and N-shaped doped source-silane, is under the condition of 1100 ℃ in temperature, epitaxial growth thickness is 2 μ m, and doping content is 2 * 10
17cm
-3n
-gaN active layer; Continue to adopt the mode of MOCVD, pass into trimethyl gallium, nitrogen and N-shaped doped source-silane to MOCVD reative cell, be 60Torr keeping air pressure simultaneously, and temperature is that under the condition of 1100 ℃, epitaxial growth thickness is 400nm, and doping content is 2 * 10
18cm
-3n
+gaN anode ohmic contact layer, forms GaN epitaxial layer.
Step e, forms large round table surface:
Utilize photoetching technique, on GaN epitaxial layer, forming diameter is the large circular mask pattern of 60 μ m; Adopt reactive ion etching technology, use BCl
3/ Cl
2gas carries out etching to GaN epitaxial layer, till being etched to and exposing 4H-SiC substrate surface, forms large round table surface.
Step F, forms small circular table top:
Utilize photoetching technique, on large round table surface, form the coaxial small circular table top mask pattern that diameter is 20 μ m; Adopt reactive ion etching RIE technology, use BCl
3/ Cl
2gas carries out etching to large round table surface, and etching depth enters into n
+200nm in GaN negative electrode ohmic contact layer, forms small circular table top.
Step G, forms circular electrode and annular electrode:
Adopt the mode of vacuum electronic beam evaporation, at whole device surface, evaporate successively Ti/Al/Ni/Au multiple layer metal, its thickness is respectively 35nm/125nm/55nm/165nm; Adopt metal lift-off techniques, form circular electrode and annular electrode.
Step H, the ohmic contact of formation GaN:
In argon gas atmosphere, at the temperature of 950 ℃, whole device is carried out to the quick thermal annealing process in 50 seconds, form GaN ohmic contact.
Step I, the negative electrode of formation through hole 12 and Gunn diode:
First utilize photoetching technique, at the back side of 6H-SiC substrate, form 4 via mask figures that diameter is 10 μ m; Adopt again reactive ion RIE lithographic technique, use BCl
3/ Cl
2gas carries out etching to SiC substrate, is etched to annular electrode surface always, forms through hole 12; Then adopt the mode of vacuum electronic beam evaporation, at the back side of 6H-SiC substrate, evaporating successively thickness is that the Ti of 35nm is, the Ni of the Al of 125nm, 55nm and the Au of 200nm; Finally adopt metal lift-off techniques, form underlayer electrode, the through hole 12 injecting after metal is connected underlayer electrode with annular electrode, forms the negative electrode of GaN Gunn diode.
Step K, epitaxial growth SiN passivation layer:
Adopt the mode of PECVD, the silane simultaneously passing into and nitrogen, be that 60Torr, temperature are under the condition of 1100 ℃ at pressure, the SiN passivation layer that epitaxial growth thickness is 400nm on the sample after above-mentioned steps is processed.
Step L, forms Gunn diode anode:
Adopt the method for RIE etching, use CF
4gas carries out etching to SiN passivation layer, is etched to circular electrode surface always, forms perforate 11, exposes the anode of diode, completes the making of device, and the final Gunn diode tube core section forming as shown in Figure 1.
Claims (7)
1. based on an AlGaN/GaN superlattice electron emission layer GaN Gunn diode, comprise that main part and auxiliary body divide, this main part comprises from bottom to top: SiC substrate (1), AlN nucleating layer (2), n
+gaN negative electrode ohmic contact layer (3), electron emission layer (4), n
-gaN active layer (5) and n
+gaN anode ohmic contact layer (6); Auxiliary body divides and comprises annular electrode (7), underlayer electrode (8), circular electrode (9), passivation layer (10) perforate (11) and through hole (12); Annular electrode (7) and underlayer electrode (8), as the negative electrode of device, lay respectively at n
+the below of the top of GaN negative electrode ohmic contact layer (3) and SiC substrate (1), circular electrode (9) is positioned at n as the anode of device
+the top of GaN anode ohmic contact layer (6), passivation layer (8) is positioned at the top of annular electrode (7) and circular electrode (9); Perforate (11) and through hole (12) lay respectively in passivation layer (10) and SiC substrate (1), and through hole (12) is connected annular electrode (7) with underlayer electrode (8), form longitudinal device architecture;
It is characterized in that: electron emission layer (4) adopts AlGaN/GaN superlattice, these superlattice are provided with 4～6 cycles, GaN layer thickness in each cycle is 10-20nm, and AlGaN layer thickness is 10-20nm, and the Al concentration of component in AlGaN layer is from bottom to up by 0% linear gradient to 15%.
2. AlGaN/GaN superlattice electron emission layer GaN Gunn diode as claimed in claim 1, is characterized in that SiC substrate (1) selects the semi-insulating type substrate of 4H-SiC or the semi-insulating type substrate of 6H-SiC or 6H-SiC conducting type substrate.
3. AlGaN/GaN superlattice electron emission layer GaN Gunn diode as claimed in claim 1, the thickness that it is characterized in that AlN nucleating layer (2) is 30～60nm.
4. AlGaN/GaN superlattice electron emission layer GaN Gunn diode as claimed in claim 1, is characterized in that n
+the thickness of GaN negative electrode ohmic contact layer (3) is 100～400nm, and doping content is 1～2 * 10
18cm
-3.
5. AlGaN/GaN superlattice electron emission layer GaN Gunn diode as claimed in claim 1, is characterized in that n
-the thickness of GaN active layer (4) is 0.5～2 μ m, and doping content is 0.5～2 * 10
17cm
-3.
6. AlGaN/GaN superlattice electron emission layer GaN Gunn diode as claimed in claim 1, is characterized in that n
+the thickness of GaN anode ohmic contact layer (5) is 100～400nm, and doping content is 1～2 * 10
18cm
-3.
7. the manufacture method based on AlGaN/GaN superlattice electron emission layer GaN Gunn diode, carry out according to the following procedure:
(1) epitaxial growth AlN nucleating layer:
Adopt the method for metal organic chemical vapor deposition MOCVD, on N-shaped or insulated type SiC substrate, the AlN nucleating layer that epitaxial growth thickness is 30～90nm;
(2) epitaxial growth n
+gaN negative electrode ohmic contact layer:
On the AlN nucleating layer of extension, by the method for metal organic chemical vapor deposition MOCVD, epitaxial growth doping content is 1～2 * 10
18cm
-3, the thickness n that is 100～400nm
+gaN negative electrode ohmic contact layer;
(3) epitaxial growth electron emission layer:
3.1) at the n of extension
+on GaN negative electrode ohmic contact layer, utilize molecular beam epitaxy MBE technology, first epitaxial growth thickness is 10-20nm, and Al concentration of component is from bottom to up by the AlGaN layer of 0% linear gradient to 15%; Continue to adopt MBE technology, the GaN layer that epitaxial growth thickness is 10-20nm, this GaN layer and AlGaN layer form the one-period of superlattice;
3.2) repeated growth 3-5 the cycle, form electron emission layer;
(4) epitaxial growth n
-gaN active layer:
On AlGaN/GaN superlattice electron emission layer, utilize the method for metal organic chemical vapor deposition MOCVD, epitaxial growth doping content is 0.5～2 * 10
17cm
-3, thickness is the n of 0.5～2 μ m
-gaN active layer;
(5) epitaxial growth n
+gaN anode ohmic contact layer:
At described n
-on GaN active layer, utilize the method for metal organic chemical vapor deposition MOCVD, epitaxial growth doping content is 1～2 * 10
18cm
-3, the thickness n that is 100～400nm
+gaN anode ohmic contact layer;
(6) etching forms large round table surface:
Adopt reactive ion etching technology to carry out etching to the epitaxial loayer on SiC substrate, be etched to the upper surface of SiC substrate always, take and form diameter as d
0large round table surface, 30 μ m<d wherein
0<60 μ m;
(7) etching forms small circular table top:
On described large round table surface, continue to adopt lithographic technique, formation diameter is d
1small circular table top, etching depth is to n
+gaN negative electrode ohmic contact layer, 10 μ m<d
1<20 μ m;
(8) form circular electrode and annular electrode:
8.1) adopt vacuum electron beam evaporation technique, the n exposing in small circular table top and etching
+deposit Ti/Al/Ni/Au multiple layer metal on GaN negative electrode ohmic contact layer,
8.2) adopt metal lift-off techniques, on small circular table top, form circular electrode, the anode of Gunn diode forms annular electrode in negative electrode ohmic contact aspect;
(9) form the ohmic contact of metal and GaN:
At the temperature of 950 ℃, pass into Ar
2the time of carrying out is the rapid thermal annealing in 50 seconds, makes n
+between GaN and circular electrode metal and annular electrode metal, form ohmic contact;
(10) etching forms through hole:
Adopt reactive ion etching technology, in SiC substrate back etching, form n through hole, n>=1, etching depth is to annular electrode;
(11) form the negative electrode of GaN Gunn diode:
The SiC through hole and the SiC substrate back deposit Ti/Al/Ni/Au multiple layer metal that in etching, form, form anode substrate electrode, and underlayer electrode forms Gunn diode negative electrode together with annular connecting electrode;
(12) epitaxial growth SiN passivation layer expose the anode of diode:
12.1) the SiN passivation layer that the method for employing PECVD is 200～400nm at device front deposition thickness,
12.2) adopt reactive ion etching technology on small circular table top, to form perforate 11, expose Gunn diode anode.
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| CN113451088A (en) * | 2021-05-25 | 2021-09-28 | 电子科技大学 | Preparation method of GaN photocathode with superlattice nanowire structure |
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| CN113904645A (en) * | 2021-10-26 | 2022-01-07 | 中国科学院上海微系统与信息技术研究所 | Preparation method of aluminum nitride/silicon carbide composite acoustic wave resonator and resonator |
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