CN104022141A - Inverted top-emitting AMOLED device based on NMOS transistor and production method thereof - Google Patents
Inverted top-emitting AMOLED device based on NMOS transistor and production method thereof Download PDFInfo
- Publication number
- CN104022141A CN104022141A CN201410260280.XA CN201410260280A CN104022141A CN 104022141 A CN104022141 A CN 104022141A CN 201410260280 A CN201410260280 A CN 201410260280A CN 104022141 A CN104022141 A CN 104022141A
- Authority
- CN
- China
- Prior art keywords
- layer
- electrode
- grid
- source electrode
- drain electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
The invention discloses an inverted top-emitting AMOLED device based on an NMOS transistor. A glass substrate is provided with a buffer layer, and the buffer layer is sequentially provided with a polycrystalline silicon channel, a gate insulation layer and a grid electrode. A lower electrode is arranged on the same layer with the grid electrode, N+ doping areas are arranged on the two sides of the polycrystalline silicon channel, and an interlayer insulation layer is arranged on the grid electrode to cover an entire base plate substrate. Contact holes are formed in the interlayer insulation layer and the grid electrode, and a source electrode and a drain electrode are in ohmic contact with the polycrystalline silicon channel through the contact holes. An upper electrode is arranged on the same layer with the source electrode, passivation layers are arranged on the source electrode and the drain electrode, and the lower electrode and the upper electrode form a storage capacitor. The inverted top-emitting AMOLED device based on the NMOS transistor has the advantages that the top-emitting AMOLED device is of an inverted structure, the opening ratio is high, an N-type transistor which is more superior to a P-type transistor in performance is fully utilized, a caesium containing compound with a strong n-type doping effect is adopted, the electron injection capacity is improved, the light-emitting efficiency of the device is effectively improved, and the service life of the device is effectively prolonged.
Description
Technical field
The present invention relates to ORGANIC ELECTROLUMINESCENCE DISPLAYS technical field, particularly a kind of inversion top transmitting AMOLED device and production method based on nmos pass transistor.
Background technology
Active matrix type organic light emitting diode (Active Matrix Organic Light Emitting Diode, abbreviation: AMOLED) device is a kind of New flat panel display part of following preparation large scale, high definition organic display equipment.Typical active OLED device is all made in thin-film transistor anode one side of device, generally adopts p channel transistor to form constant-current source and drives organic luminescent device luminous.And conventional transistor, the carrier mobility of n raceway groove is obviously greater than p raceway groove, and transistor performance is also obviously better than p raceway groove.Therefore adopt nmos pass transistor to drive organic luminescent device, can improve device performance.
When making drive circuit with n channel thin-film transistor, need organic light-emitting device negative electrode to be connected with the drain electrode of driving transistors, formed inversion type structure devices.Prepare inversion type top transmitting AMOLED device, first in glass substrate, make NMOS pipe pixel driver, then adopt the negative electrode that can reflect to do substrate, then evaporation organic material, finally sputters on organic layer transparent ito thin film as anode.This structure devices has not only solved the problem of aperture opening ratio, also takes full advantage of the N-type transistor of superior performance, and the application aspect that it is shown in large scale is more competitive.
General organic light-emitting device negative electrode usually adopts low workfunction metal or Al/LiF bilayer structure, because low workfunction metal character is active, it is more difficult that volume production film-forming process is controlled, and the sedimentary sequence of metal and organic layer is put upside down while preparing inversion type device, can make the interface potential barrier of metal and organic layer increase, be unfavorable for electronic injection and conduction, cause driving voltage to increase.Although and Al/LiF bilayer cathode construction has good electron injection efficiency, LiF shows this superiority adjacent metal A l that places one's entire reliance upon, arranging in pairs or groups with other metal electrodes, effect is not good enough.And with the caesium of main group, there is strong metallicity and N-shaped heavy doping effect with lithium, be extraordinary electronic injection doping candidate material.In addition, sputtering ITO anode on organic layer, produces the non-radiative relaxation process that strong radiant energy can destroy organic layer and can cause charge carrier, and then can affect device performance in sputter procedure.
Summary of the invention
Technical problem to be solved by this invention has been to provide a kind of top transmitting AMOLED device of inverted structure, under the prerequisite that does not rely on cathodic metal material, improve cathode electronics injection and the conducting power of being inverted device, increase aperture opening ratio, improve device efficiency and life-span.
Inversion top transmitting AMOLED device based on nmos pass transistor of the present invention, comprise glass substrate and OLED device containing TFT, the described glass substrate containing TFT comprises glass substrate, resilient coating, polysilicon raceway groove, gate insulator, N+ doped region, grid, bottom electrode, source electrode, top electrode, drain electrode, interlayer insulating film, storage capacitance and passivation layer; On glass substrate, be provided with resilient coating, on resilient coating, be disposed with polysilicon raceway groove, gate insulator and grid; Be provided with bottom electrode with grid same layer, there is N+ doped region polysilicon raceway groove both sides, interlayer insulating film is arranged on grid, cover whole substrate substrate, in interlayer insulating film and grid, be provided with contact hole, source electrode and drain electrode are carried out ohmic contact by contact hole and polysilicon raceway groove, are provided with top electrode with source electrode same layer, in source electrode and drain electrode, be provided with passivation layer, bottom electrode and top electrode form storage capacitance.Described OLED device comprises reflective cathode, electron injecting layer, electron transfer layer, organic luminous layer, hole transmission layer, hole injection layer and ito anode; Reflective cathode, electron injecting layer, electron transfer layer, organic luminous layer, hole transmission layer, hole injection layer and ito anode stack gradually.
Described reflective cathode material is aluminium, silver, silver/magnesium complex metal layer or silver/aluminum composite metal layer.
Described electron injecting layer material is cesium oxide, cesium hydroxide, cesium carbonate, cesium nitrate or cesium fluoride.
Inversion top transmitting AMOLED device manufacturing method based on nmos pass transistor of the present invention, comprises the steps:
Step 1, on glass substrate, form resilient coating;
Step 2, on resilient coating polysilicon raceway groove, gate insulator and grid successively; Form grid and form bottom electrode simultaneously;
Step 3, by Implantation, form N+ doped region;
Step 4, interlayer insulating film is covered on the substrate substrate that comprises grid;
Step 5, etching interlayer insulating film and gate insulator form connecting hole;
Step 6, formation source electrode and drain electrode, source electrode is connected with polysilicon raceway groove by connecting hole with drain electrode; Form source electrode and drain and form top electrode simultaneously;
Step 7, on substrate deposit passivation layer, this passivation layer of etching forms the drain contact hole that connects drain electrode;
Step 8, formation OLED device cover on passivation layer;
Described step comprises the steps:
Step 8-1, deposition of reflective negative electrode and electron injecting layer successively;
Step 8-2, evaporation forms electron transfer layer, organic luminous layer and hole transmission layer successively;
Step 8-3, evaporation tungstic acid buffer electrode layer form hole injection layer;
Step 8-4, sputter form ito anode.
The top transmitting active matrix type organic light emitting display device of a kind of inverted structure provided by the invention, comprise: glass substrate, the N-type thin-film transistor pixel-driving circuit forming on substrate, with the reflective cathode layer and the electron injecting layer that drive thin-film transistor to be connected; And luminous organic material layer and anode layer.Wherein, the passivation layer of thin-film transistor covers the whole substrate that comprises source electrode, drain electrode, and this passivation layer has the drain contact hole that exposes part drain electrode.Reflective cathode layer covers on whole passivation layer, and is connected to drain electrode by drain contact hole; Reflective cathode layer is any in aluminium, silver, silver/magnesium, silver/aluminium, take silver as optimum, and silver electrode resistance is little and reflective good.Electron injecting layer is the metallic compound of caesium, comprises cesium oxide, cesium hydroxide, and cesium carbonate, cesium nitrate, cesium fluoride, take cesium oxide and cesium carbonate as optimum.Between luminous organic material layer and anode layer, thermal evaporation tungstic acid buffer electrode layer, as hole injection layer, improves hole injectability.
In sum, inversion top transmitting AMOLED device based on nmos pass transistor of the present invention has the top transmitting AMOLED device of inverted structure, aperture opening ratio is high, take full advantage of the N-type transistor more more superior than P transistor npn npn performance, and adopted have strong N-shaped doping effect containing cesium compound, improve electronic injection ability, the advantages such as the luminous efficiency of effective boost device and life-span.
Accompanying drawing explanation
Fig. 1 is the cross-sectional structure figure of the inversion top transmitting AMOLED device based on nmos pass transistor;
Fig. 2 is the inversion top transmitting AMOLED device Facad structure figure based on nmos pass transistor.
Wherein, 1, the glass substrate that contains TFT; 2, OLED device; 3, glass substrate; 4, resilient coating; 5, polysilicon raceway groove; 6, gate insulator; 7, N+ doped region; 8, grid; 9, bottom electrode; 10, source electrode; 11, top electrode; 12, drain electrode; 13, interlayer insulating film; 14, drain contact hole; 15, storage capacitance; 16, passivation layer; 17, reflective cathode; 18, electron injecting layer; 19, electron transfer layer; 20, organic luminous layer; 21, hole transmission layer; 22, hole injection layer; 23, ito anode.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment, the invention will be further elaborated.
As depicted in figs. 1 and 2, inversion top transmitting AMOLED device based on nmos pass transistor of the present invention, comprise glass substrate 1 and OLED device 2 containing TFT, the described glass substrate 1 containing TFT comprises glass substrate 3, resilient coating 4, polysilicon raceway groove 5, gate insulator 6, N+ doped region 7, grid 8, bottom electrode 9, source electrode 10, top electrode 11, drain electrode 12, interlayer insulating film 13, storage capacitance 15 and passivation layer 16; On glass substrate 3, be provided with resilient coating 4, on resilient coating 4, be disposed with polysilicon raceway groove 5, gate insulator 6 and grid 8; The other end relative with grid 8 is provided with bottom electrode 6, there is N+ doped region 7 polysilicon raceway groove 5 both sides, interlayer insulating film 13 is arranged on grid 8, cover whole substrate substrate, in interlayer insulating film 13 and grid 8, be provided with contact hole, source electrode 10 and drain electrode 12 are carried out ohmic contact by contact hole and polysilicon raceway groove 5, and the other end relative with source electrode 10 is provided with top electrode 11, in source electrode 10 and drain electrode 12, be provided with passivation layer 16, bottom electrode 6 forms storage capacitance 15 with top electrode 11.
Described OLED device 2 comprises reflective cathode 17, electron injecting layer 18, electron transfer layer 19, organic luminous layer 20, hole transmission layer 21, hole injection layer 22 and ito anode 23; Reflective cathode 17, electron injecting layer 18, electron transfer layer 19, organic luminous layer 20, hole transmission layer 21, hole injection layer 22 and ito anode 23 stack gradually.
Described reflective cathode 17 materials are aluminium, silver, silver/magnesium complex metal layer or silver/aluminum composite metal layer.
Described electron injecting layer 18 materials are cesium oxide, cesium hydroxide, cesium carbonate, cesium nitrate or cesium fluoride.
Inversion top transmitting AMOLED device manufacturing method based on nmos pass transistor of the present invention, comprises the steps:
Step 1, on glass substrate 3, form resilient coating 4;
Step 2, on resilient coating 4 polysilicon raceway groove 5, gate insulator 6 and grid 8 successively; Form grid 8 and form bottom electrode 9 simultaneously;
Step 3, by Implantation, form N+ doped region 7;
Step 4, interlayer insulating film 13 is covered on the substrate substrate that comprises grid 8;
Step 5, etching interlayer insulating film 13 and gate insulator 6 form connecting hole;
Step 6, formation source electrode 10 and drain electrode 12, source electrode 10 is connected with polysilicon raceway groove 5 by connecting hole with drain electrode 12; Form source electrode 10 and form top electrode 11 with drain electrode 12 simultaneously;
Step 7, on substrate deposit passivation layer 16, this passivation layer of etching 16 forms the drain contact hole 14 that connects drain electrode 12;
Step 8, formation OLED device 2 cover on passivation layer 16;
Described step 8 comprises the steps:
Step 8-1, deposition of reflective negative electrode 17 and electron injecting layer 18 successively; Reflective cathode 17 is used any in aluminium, silver, silver/magnesium, silver/aluminium, take silver as optimum, and electron injecting layer 18 is used cesium oxide, cesium hydroxide, and cesium carbonate, cesium nitrate, cesium fluoride, take cesium oxide and cesium carbonate as optimum.
Step 8-2, evaporation forms electron transfer layer 19, organic luminous layer 20 and hole transmission layer 21 successively;
Step 8-3, for to prevent the destruction of sputter to organic layer, between organic material and anode, evaporate tungstic acid buffer electrode layer as hole injection layer 22;
Step 8-4, sputter form ito anode 23.
Those of ordinary skill in the art will appreciate that, embodiment described here is in order to help reader understanding's principle of the present invention, should be understood to that protection scope of the present invention is not limited to such special statement and embodiment.Those of ordinary skill in the art can make various other various concrete distortion and combinations that do not depart from essence of the present invention according to these technology enlightenments disclosed by the invention, and these distortion and combination are still in protection scope of the present invention.
Claims (6)
1. AMOLED device is launched on the inversion top based on nmos pass transistor, comprise glass substrate (1) and OLED device (2) containing TFT, it is characterized in that: the described glass substrate (1) containing TFT comprises glass substrate (3), resilient coating (4), polysilicon raceway groove (5), gate insulator (6), N+ doped region (7), grid (8), bottom electrode (9), source electrode (10), top electrode (11), drain electrode (12), interlayer insulating film (13), storage capacitance (15) and passivation layer (16); On glass substrate (3), be provided with resilient coating (4), on resilient coating (4), be disposed with polysilicon raceway groove (5), gate insulator (6) and grid (8); be provided with bottom electrode (6) with grid (8) same layer, there is N+ doped region (7) polysilicon raceway groove (5) both sides, interlayer insulating film (13) is arranged on grid (8), cover whole substrate substrate, in interlayer insulating film (13) and grid (8), be provided with contact hole, source electrode (10) and drain electrode (12) are carried out ohmic contact by contact hole and polysilicon raceway groove (5), be provided with top electrode (11) with source electrode (10) same layer, in source electrode (10) and drain electrode (12), be provided with passivation layer (16), bottom electrode (6) forms storage capacitance (15) with top electrode (11).
2. the inversion top transmitting AMOLED device based on nmos pass transistor as claimed in claim 1, is characterized in that: described OLED device (2) comprises reflective cathode (17), electron injecting layer (18), electron transfer layer (19), organic luminous layer (20), hole transmission layer (21), hole injection layer (22) and ito anode (23); Reflective cathode (17), electron injecting layer (18), electron transfer layer (19), organic luminous layer (20), hole transmission layer (21), hole injection layer (22) and ito anode (23) stack gradually.
3. the inversion top transmitting AMOLED device based on nmos pass transistor as claimed in claim 2, is characterized in that: described reflective cathode (17) material is aluminium, silver, silver-colored magnesium complex metal layer or silver-colored aluminum composite metal layer.
4. the inversion top transmitting AMOLED device based on nmos pass transistor as claimed in claim 2, is characterized in that: described electron injecting layer (18) material is cesium oxide, cesium hydroxide, cesium carbonate, cesium nitrate or cesium fluoride.
5. the top of the inversion based on a nmos pass transistor transmitting AMOLED device manufacturing method, is characterized in that, comprises the steps:
Step 1, at the upper resilient coating (4) that forms of glass substrate (3);
Step 2, on resilient coating (4) polysilicon raceway groove (5), gate insulator (6) and grid (8) successively; Form grid (8) and form bottom electrode (9) simultaneously;
Step 3, by Implantation, form N+ doped region (7);
Step 4, interlayer insulating film (13) is covered on the substrate substrate that comprises grid (8);
Step 5, etching interlayer insulating film (13) and gate insulator (6) form connecting hole;
Step 6, formation source electrode (10) and drain electrode (12), source electrode (10) is connected with polysilicon raceway groove (5) by connecting hole with drain electrode (12); Formation source electrode (10) and drain electrode (12) form top electrode (11) simultaneously;
Step 7, on substrate deposit passivation layer (16), this passivation layer of etching (16) form to connect the drain contact hole (14) of drain electrode (12);
Step 8, formation OLED device (2) cover on passivation layer (16).
6. the inversion top transmitting AMOLED device manufacturing method based on nmos pass transistor as claimed in claim 5, is characterized in that: described step 8 comprises the steps:
Step 8-1, deposition of reflective negative electrode (17) and electron injecting layer (18) successively;
Step 8-2, evaporation shape successively
Become electron transfer layer (19), organic luminous layer (20) and hole transmission layer (21);
Step 8-3, evaporation tungstic acid buffer electrode layer form hole injection layer (22);
Step 8-4, sputter form ito anode (23).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410260280.XA CN104022141A (en) | 2014-06-12 | 2014-06-12 | Inverted top-emitting AMOLED device based on NMOS transistor and production method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410260280.XA CN104022141A (en) | 2014-06-12 | 2014-06-12 | Inverted top-emitting AMOLED device based on NMOS transistor and production method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104022141A true CN104022141A (en) | 2014-09-03 |
Family
ID=51438806
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410260280.XA Pending CN104022141A (en) | 2014-06-12 | 2014-06-12 | Inverted top-emitting AMOLED device based on NMOS transistor and production method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104022141A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019015055A1 (en) * | 2017-07-18 | 2019-01-24 | 深圳市华星光电半导体显示技术有限公司 | Manufacturing method for amoled device array substrate |
| WO2021088129A1 (en) * | 2019-11-06 | 2021-05-14 | 深圳市华星光电半导体显示技术有限公司 | Oled display panel, display apparatus, and preparation method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1457220A (en) * | 2002-06-03 | 2003-11-19 | Lg.菲利浦Lcd株式会社 | Active matrix organic electrogenerated luminescent device and manufacturing method thereof |
| CN1510974A (en) * | 2002-12-20 | 2004-07-07 | ����Sdi��ʽ���� | Organic electroluminecent device for improving luminance |
| CN101369635A (en) * | 2008-09-28 | 2009-02-18 | 清华大学 | Inversion type OLED display device and preparation method thereof |
| US20100178724A1 (en) * | 2006-01-20 | 2010-07-15 | Samsung Electronics Co., Ltd. | Organic electroluminescent display and method of fabricating the same |
-
2014
- 2014-06-12 CN CN201410260280.XA patent/CN104022141A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1457220A (en) * | 2002-06-03 | 2003-11-19 | Lg.菲利浦Lcd株式会社 | Active matrix organic electrogenerated luminescent device and manufacturing method thereof |
| CN1510974A (en) * | 2002-12-20 | 2004-07-07 | ����Sdi��ʽ���� | Organic electroluminecent device for improving luminance |
| US20100178724A1 (en) * | 2006-01-20 | 2010-07-15 | Samsung Electronics Co., Ltd. | Organic electroluminescent display and method of fabricating the same |
| CN101369635A (en) * | 2008-09-28 | 2009-02-18 | 清华大学 | Inversion type OLED display device and preparation method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019015055A1 (en) * | 2017-07-18 | 2019-01-24 | 深圳市华星光电半导体显示技术有限公司 | Manufacturing method for amoled device array substrate |
| WO2021088129A1 (en) * | 2019-11-06 | 2021-05-14 | 深圳市华星光电半导体显示技术有限公司 | Oled display panel, display apparatus, and preparation method |
| US11355571B2 (en) | 2019-11-06 | 2022-06-07 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | OLED display panel having storage capacitor and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105931988B (en) | Manufacturing method of AMOLED pixel driving circuit | |
| JP4934599B2 (en) | Active matrix display device | |
| US10074711B2 (en) | AMOLED display device | |
| US9947736B2 (en) | Manufacture method of AMOLED back plate and structure thereof | |
| CN110416427B (en) | Organic light emitting transistor, manufacturing method thereof, display panel and electronic device | |
| US8003417B2 (en) | Organic electroluminescent display device and method of manufacturing the same | |
| CN107170900B (en) | Oled substrate and preparation method thereof, display device | |
| CN105140260A (en) | Organic light-emitting diode array substrate and manufacturing method thereof and display device | |
| TW200529695A (en) | Organic electroluminescence display device and its fabrication method | |
| KR101994858B1 (en) | Organic Light Emitting Diode Display Device and Method for Manufacturing The Same | |
| CN104538421B (en) | Oled display substrate and its manufacturing method | |
| TW200533234A (en) | Organic electro luminescence device and fabrication method thereof | |
| US8841832B2 (en) | Organic light emitting diode display having improved strength by preventing the exfoliation of a sealant | |
| TW588299B (en) | Active-matrix organic electroluminescence display device and fabricating method thereof | |
| CN108987480A (en) | Double gate thin-film transistor and preparation method thereof, display panel and preparation method thereof | |
| CN104393191A (en) | Organic electroluminescence device, display device and preparation method of organic electroluminescence device | |
| CN103855322A (en) | Organic light emitting display device and method for manufacturing the same | |
| US11877475B2 (en) | Display panel including storage capacitor and method for manufacturing same | |
| US8916877B2 (en) | Thin film transistor, fabrication method thereof, and organic light emitting diode display having the same | |
| GB2530222A (en) | Organic light emitting diode anode connection structure and manufacturing method thereof | |
| CN104022141A (en) | Inverted top-emitting AMOLED device based on NMOS transistor and production method thereof | |
| US11177332B2 (en) | TFT array substrate requiring fewer masks and method for manufacturing the same and OLED display panel | |
| CN103247571B (en) | Manufacturing method of pixel structure for organic light emitting display | |
| US11690241B2 (en) | OLED with auxiliary electrode contacting electron transport layer | |
| CN106206658A (en) | Luminous display unit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140903 |
|
| RJ01 | Rejection of invention patent application after publication |