CN104020612B - Method for forming alignment layer and method for forming liquid crystal panel - Google Patents
Method for forming alignment layer and method for forming liquid crystal panel Download PDFInfo
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- CN104020612B CN104020612B CN201410293191.5A CN201410293191A CN104020612B CN 104020612 B CN104020612 B CN 104020612B CN 201410293191 A CN201410293191 A CN 201410293191A CN 104020612 B CN104020612 B CN 104020612B
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Abstract
The invention provides a method for forming an alignment layer and a method for forming a liquid crystal panel. The method for forming an alignment layer comprises the following steps: forming an alignment material layer on a substrate; performing orientation treatment on the alignment material layer; washing the alignment material layer by adopting over-heat steam or overheat gas; cooling and baking until the alignment layer is formed. According to the method for forming the alignment layer, process steps can be saved, the process output is increased, the process flow is simplified, and the process rhythm is improved.
Description
Technical field
The present invention relates to display field, more particularly to a kind of forming method and the forming method of liquid crystal panel of both alignment layers.
Background technology
Liquid crystal display is lightweight with small volume, is widely used in various fields the advantages of Low emissivity.Liquid crystal display
Operation principle is：Change the deflection angle of liquid crystal molecule by changing the voltage being applied on liquid crystal, so as to control polarized light rotation
Turn direction and polarization state, to realize the change of liquid crystal display dispaly state.
It is rambling that generally Liquid Crystal Molecules Alignment is randomly oriented and is distributed, in order that liquid crystal molecule can be along one
Individual direction arrangement, needs to carry out orientation at least one of the color membrane substrates in liquid crystal panel and array base palte.Orientation side
Method is to form both alignment layers towards the side of liquid crystal in color membrane substrates and array base palte and carry out orientation process so that both alignment layers are acted on
In liquid crystal molecule, so that liquid crystal molecule regular can be arranged, and then the applied voltage on array base palte and color membrane substrates
After can control liquid crystal molecule rotation predetermined angular (Pretilt angle).Effect of this predetermined angular in liquid crystal display has：
1. make liquid crystal molecule that there is uniform and stable initial orientation state；2. prevent from producing farmland mistake during applied voltage.
But the forming method of existing both alignment layers can not well go the removal of impurity, impurity easily to remain in cleaning stage, make
LCD alignment effect is deteriorated.
The content of the invention
The problem that the present invention is solved is to provide a kind of forming method of both alignment layers and the forming method of liquid crystal panel, to prevent
Impurities left in the forming process of both alignment layers.
To solve the above problems, the present invention provides a kind of forming method of both alignment layers, including：Orientation material is formed on substrate
The bed of material；Orientation process is carried out to the alignment materials layer；After the orientation process, using superheated steam or overheated gas
Carry out cleaning；After the cleaning, carry out lowering the temperature stoving process until forming both alignment layers.With prior art phase
Than technical scheme has advantages below：
When the removal of impurity is gone, it is not necessary to carry out the special thermosetting that adds and bake process step, but in alignment materials layer orientation position
Cleaning is carried out using superheated steam or overheated gas after reason, and orientation process is made using cooling stoving process follow-up
Rear alignment materials layer is simultaneously completely removed clean, saves processing step, improves technique output, and process simplification is carried
High technology beat.
Further, the present invention provides a kind of forming method of liquid crystal panel and includes：Two substrates that offer is oppositely arranged；
Forming method on substrate described at least one using both alignment layers provided by the present invention forms both alignment layers.
Description of the drawings
Fig. 1 is the corresponding schematic flow sheet of each step of forming method of the both alignment layers that the embodiment of the present invention is provided；
Fig. 2 be the both alignment layers that the embodiment of the present invention is provided forming method in the process of one of multisection type cooling show
It is intended to；
Fig. 3 be the both alignment layers that the embodiment of the present invention is provided forming method in the process of another multisection type cooling illustrate
Figure；
Fig. 4 be the both alignment layers that the embodiment of the present invention is provided forming method in the process of another multisection type cooling illustrate
Figure.
Specific embodiment
The forming method of existing both alignment layers can not well go the removal of impurity in cleaning stage, easily leave residual, make liquid crystal
Orientation effect is deteriorated.
For this purpose, the present invention provides a kind of forming method of new both alignment layers, the forming method is adopted when the removal of impurity is gone
Superheated steam or overheated gas carry out cleaning, and make the orientation after orientation process using cooling stoving process follow-up
The impurity and catabolite of material layer is completely removed totally, due to being played using cleaning and cooling stoving process simultaneously
Except the effect of catabolite after illumination, therefore processing step is saved, improve technique output, process simplification improves work
Skill beat.
It is understandable to enable the above objects, features and advantages of the present invention to become apparent from, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
The embodiment of the present invention provides a kind of forming method of both alignment layers, and each step of the forming method is as shown in Figure 1.
Fig. 1 is refer to, step S11 is carried out：Alignment materials layer is formed on substrate.
In the present embodiment, the substrate can be color membrane substrates or array base palte in display panels, and shape
Surface into alignment materials layer is the surface of color membrane substrates or array base palte towards follow-up liquid crystal layer.The material of the substrate can
Think glass plate or plastic plate, plastic plate can be pvc material plate (Polyvinylchloride, PVC) etc..In substrate
Substrate can be carried out cleaning process before upper formation alignment materials layer, remove pollution granule that may be present on substrate, then
Drying and processing is carried out to substrate.
The material of the alignment materials layer is polyamic acid (polyamide acid), poly amic acid ester (polyamic
Acid ester) and polyimides (polyimide) at least one.Polyamic acid, poly amic acid ester and polyimides material
The alignment materials layer of matter is typically more stable, even if at 150 DEG C~250 DEG C, also with vapor etc. there is no untoward reaction.
Forming the process of alignment materials layer can be：Using turn coating (spin coating), a slot coated (slit
Coating) or other methods are coated with alignment liquid on substrate, the main component of alignment liquid can be polyimides, polyimides
Thin film has excellent resistant of high or low temperature, electric insulating quality, caking property, radiation resistance, resistance to medium, can be -269 DEG C~280
Life-time service within the temperature range of DEG C, can reach in short-term 400 DEG C of high temperature, and the solvent composition of alignment liquid can include N- methyl pyrroles
Pyrrolidone (NMP), ethylene glycol monobutyl ether (BC) and gamma-butyrolacton (BL).NMP is used to dissolve polyimides, and BC is used to improve print
Brush, BL is used to assist dissolving polyimides；Then prebake conditions are carried out to the alignment liquid, prebake conditions temperature can be 100 DEG C
Between~150 DEG C, the time of prebake conditions can be 15min~30min.Prebake conditions remove most of solvent volatilization.
Please continue to refer to Fig. 1, step S12 is carried out：To the alignment materials layer, (now alignment materials layer is after prebake conditions
Alignment liquid) carry out orientation process.The orientation process can be at light orientation process, friction matching process or ion beam orientation
Reason.
Before using friction matching process, process can be admittedly baked to the alignment liquid after prebake conditions process, Gu roasting processed
Temperature can be 230 DEG C or so.Friction matching processes detailed process：Using materials such as nylon, artificial silk or velveteens
(being referred to as friction cloth) is processed alignment materials layer in certain direction, so that the alignment materials layer surface after processing forms ditch
Groove, so as to have certain anchoring ability to liquid crystal molecule, can subsequently be such that liquid crystal molecule carries out by certain tilt angle stable
With homogeneous arrangement.
Generally alignment materials layer surface can also have impurity after friction matching process, it is therefore desirable to carry out remove impurity process.
Using ion beam orientation before processing, process can be admittedly baked to the alignment liquid after prebake conditions process, Gu roasting processed
Temperature can be 230 DEG C or so.Ion beam orientation processes detailed process：To move into the substrate of alignment materials layer
In vacuum chamber, ion is produced using ion gun, then make ion form wire ion beam through filtration treatment, wire ion beam is swept
The zones of different for clashing into alignment materials layer is retouched, so as to reach orientation process.Specifically, the alignment materials main chain of alignment materials layer
Specific part is disconnected by ion beam, and for alignment liquid crystal molecule in a predetermined direction, side chain is used to form pre-tilt angle.
After ion beam orientation is processed, due to the small molecular weight impurity that broken to form of main chain, generally it is also required to carry out remove impurity
Process.
It is to cause optics respectively to different with specific direction irradiation alignment film using the ultraviolet light (UV) of polarization that light orientation is processed
Property, it is a kind of contactless alignment technique.Light alignment materials formed alignment film change mechanism can be divided into photo-crosslinking mechanism,
Light degradation response mechanism, photoisomerization response mechanism, light reorientation response mechanism etc., wherein light degradation response mechanism is formed
Light alignment materials have the advantages that thermostability and orientation stability, and the present embodiment specifically carries out light orientation using light degradation mechanism
Process.
It should be strongly noted that when the forming method using the present embodiment carries out light orientation process, at light orientation
Before reason, alignment materials layer is still within the state after prebake conditions, after this light orientation process step has been carried out, it is not necessary to again
Baked process admittedly to alignment materials layer, therefore, process to save using the light orientation of the forming method of the present embodiment and bake admittedly
Step.
For plane switching mode (IPS) or the liquid crystal panel of fringe field switching mode (FFS), if matched somebody with somebody using friction
Form both alignment layers to process, be easily caused top layer scratch, dust and the problems such as electrostatic, but both alignment layers are formed using light orientation process
The problems referred to above can be just avoided, therefore, for IPS patterns and the liquid crystal panel of FFS mode, the present embodiment is selected with light orientation
Reason forms both alignment layers.
In the present embodiment, the ultraviolet light that light source is sent by polariser formed polarized ultraviolet, polarized ultraviolet with
Light shield is set between alignment materials layer (alignment liquid after prebake conditions process), and light shield correspondence exposure alignment materials layer corresponds to each
Pixel position.Light irradiation is carried out to alignment materials layer by light shield.
After light degradation type alignment materials layer is subject to particular light (usual illumination is linear polarization ultraviolet light), alignment materials layer
In imide group be excited, produce free radical, cause macromolecule degraded, it is long with the equidirectional molecule in the polarization direction of UV light
Chain is degraded, and the macromolecule perpendicular to the polarization direction of UV light still has the imide group not being degraded in a large number, in model moral
In the presence of Hua Li, macromolecule produces orientation.
Catabolite after illumination still has an impact to the orientation of liquid crystal molecule, for this purpose, also to carry out to these catabolites
Remove.However, catabolite (the especially larger catabolite of molecule), is difficult to remove, and after these catabolite residuals
During the liquid crystal panel that later use this substrate may be caused to be formed, make liquid crystal panel low contrast, light leak and ghost etc. occur and ask
Topic.
Analyze from more than, no matter using which kind of orientation process, be required to carry out remove impurity process after orientation process,
Process especially with light orientation, need to be removed catabolite.
For this purpose, the present embodiment is after the orientation process, as shown in figure 1, carrying out step S13：Using superheated steam or
Person's overheated gas carry out cleaning.
In the present embodiment, the superheated steam is overheated steam.Due to overheated steam it is cheap and easy to get, and using peace
Entirely, therefore can be cleaned using overheated steam under normal circumstances.And the temperature range of the overheated steam is 100
DEG C~250 DEG C.Specifically, the temperature of the overheated steam can for 100 DEG C, 150 DEG C, 180 DEG C, 200 DEG C, 210 DEG C, 220
DEG C, 230 DEG C, 240 DEG C, 245 DEG C or 250 DEG C.
In the other embodiment of the present invention, the superheated steam can be overheated organic steam.When being had using overheated
Overheated alcohol vapour can be adopted during machine steam, this is because ethanol is cheap and easy to get, and without toxicity, using safety.
In the other embodiment of the present invention, it would however also be possible to employ overheated gas carry out the cleaning, described
Overheated gas can be overheated noble gases.When hot inert gas were adopted, overheated argon can be adopted, this is due to argon work
Industry is widely used, and stable in properties, will not react with other film layers and cause material degradation.
The cleaning can be carried out in steam chambers, and the substrate will with the alignment materials layer is arranged
In steam chambers, then pass to overheated steam and cleaned.In order that cleaning performance more preferably, has can the substrate
The surface of the alignment materials layer is arranged down so that overheated steam preferably act on when steam chambers are passed through it is described
Alignment materials layer.
The scavenging period scope of the cleaning is 1min~60min, and concrete scavenging period can be adjusted according to practical situation
It is whole, for example, 1min, 10min, 20min, 30min, 40min, 50min or 60min.
The cleaning that the present embodiment is adopted is cleaned using superheated steam, can be removed in orientation process step
The impurity and catabolite of generation.But, due to being cleaned using overheated steam, in order to ensure residual without hydrone on substrate
Stay, need to carry out drying and processing to substrate.
For this purpose, the present embodiment is after cleaning is carried out using superheated steam or overheated gas, as shown in Fig. 2 entering
Row step S14, after the cleaning, carries out lowering the temperature stoving process until forming both alignment layers.
In the present embodiment, the cooling stoving process, the multistage cooling drying are carried out using multistage cooling drying and processing
The initial temperature of process is the cleaning temperature of the superheated steam, the final temperature of multistage cooling drying and processing is 20 DEG C~
25 DEG C, the initial temperature is cooling difference with the difference of the final temperature.
Fig. 2 is refer to, in a specific example, using three sections of cooling drying and processings.Three sections of drying and processings of lowering the temperature
Initial temperature is 200 DEG C (cleaning temperature of superheated steam is set to 200 DEG C during i.e. aforementioned cleaning), and three sections of coolings are dried
The final temperature of dry-cure is 20 DEG C, therefore difference of lowering the temperature is 180 DEG C.
First paragraph lowers the temperature drying and processing from the beginning of zero moment, and the temperature that first paragraph cooling drying and processing is reduced can be cooling
The 10%~20% of difference, it is specifically chosen to use 15%, therefore the temperature that first paragraph cooling drying and processing is reduced is 180 DEG C × 15%
=27 DEG C, the constant drying temperature of now first paragraph cooling drying and processing is 200 DEG C -27 DEG C=173 DEG C.First paragraph cooling drying
The cooling rate of process may range from 1 DEG C/min~15 DEG C/min, specifically chosen to use 1 DEG C/min, then first paragraph cooling drying
The temperature fall time of process is down to 173 DEG C for 27min, i.e. 27min temperature.First paragraph cooling drying and processing is constant after cooling
Drying time can be 30min~60min, specifically from 60min, i.e. the constant baking of 87min first paragraphs cooling drying and processing
Dry and hard beam.
Second segment lowers the temperature drying and processing from the beginning of after 87min, and the temperature that second segment cooling drying and processing is reduced can be
The 25%~35% of cooling difference, it is specifically chosen to use 30%, therefore the temperature that reduces of second segment cooling drying and processing be 180 DEG C ×
30%=54 DEG C, the constant drying temperature of now second segment cooling drying and processing is 173 DEG C -54 DEG C=119 DEG C, second segment cooling
The cooling rate of drying and processing may range from 1 DEG C/min~15 DEG C/min, specifically chosen to use 2 DEG C/min, then second segment cooling
The temperature fall time of drying and processing is down to 119 DEG C for 27min, i.e. 114min temperature.Second segment lowers the temperature drying and processing after cooling
Constant drying time can be 30min~60min, specifically from 40min, i.e. 154min second segments cooling drying and processing
Constant drying terminates.
From the beginning of after 154min, the temperature of the 3rd section of cooling drying and processing reduction can be 3rd section of cooling drying and processing
Cooling difference 50%~60%, it is specifically chosen use the 55%, therefore the 3rd section cooling drying and processing reduce temperature be 180 DEG C ×
55%=99 DEG C, now the constant drying temperature of the 3rd section of cooling drying and processing is 119 DEG C -99 DEG C=20 DEG C, the 3rd section of cooling
The cooling rate of drying and processing may range from 1 DEG C/min~15 DEG C/min, specifically chosen to use 4 DEG C/min, then the 3rd section of cooling
The temperature fall time of drying and processing is for about 25min, i.e. 179min temperature is down to 20 DEG C.3rd section of cooling drying and processing is after cooling
Constant drying time can be 30min~60min, specifically from 30min, i.e. the 3rd section of 209min cooling drying and processings
Constant drying terminates.
After three sections are lowered the temperature drying and processing, finally give free from foreign meter and catabolite, and dry tack free is matched somebody with somebody
To layer.
Fig. 3 is refer to, in another specific example, using four sections of cooling drying and processings.Four sections of cooling drying and processings
Initial temperature be 220 DEG C (cleaning temperature of superheated steam is set to 220 DEG C during i.e. aforementioned cleaning), four sections cooling
The final temperature of drying and processing is 20 DEG C, therefore difference of lowering the temperature is 200 DEG C.
First paragraph lowers the temperature drying and processing from the beginning of zero moment, and the temperature that first paragraph cooling drying and processing is reduced can be cooling
The 5%~15% of difference, it is specifically chosen to use 10%, therefore the temperature that first paragraph cooling drying and processing is reduced is 200 DEG C × 10%
=20 DEG C, the constant drying temperature of now first paragraph cooling drying and processing is 220 DEG C -20 DEG C=200 DEG C.First paragraph cooling drying
The cooling rate of process may range from 1 DEG C/min~15 DEG C/min, specifically chosen to use 1 DEG C/min, then first paragraph cooling drying
The temperature fall time of process is reduced to 200 DEG C for 20min, i.e. 20min temperature.Perseverance of the first paragraph cooling drying and processing after cooling
It can be 30min~60min to determine drying time, and specifically from 60min, i.e., 80min first paragraphs cooling drying and processing is constant
Drying terminates.
Second segment lowers the temperature drying and processing from the beginning of after 80min, and the temperature that second segment cooling drying and processing is reduced can be
The 15%~25% of cooling difference, it is specifically chosen to use 20%, therefore the temperature that reduces of second segment cooling drying and processing be 200 DEG C ×
20%=40 DEG C, the constant drying temperature of now second segment cooling drying and processing is 200 DEG C -40 DEG C=160 DEG C, second segment cooling
The cooling rate of drying and processing may range from 1 DEG C/min~15 DEG C/min, specifically chosen to use 2 DEG C/min, then second segment cooling
Temperature is reduced to 160 DEG C when the temperature fall time of drying and processing is 20min, i.e. 100min.Second segment lowers the temperature drying and processing in drop
Constant drying time after temperature can be 30min~60min, specifically from 50min, i.e., at 150min second segments cooling drying
The constant drying of reason terminates.
From the beginning of after 150min, the temperature of the 3rd section of cooling drying and processing reduction can be 3rd section of cooling drying and processing
Cooling difference 25%~35%, it is specifically chosen use the 30%, therefore the 3rd section cooling drying and processing reduce temperature be 200 DEG C ×
30%=60 DEG C, now the constant drying temperature of the 3rd section of cooling drying and processing is 160 DEG C -60 DEG C=100 DEG C, the 3rd section of cooling
The cooling rate of drying and processing may range from 1 DEG C/min~15 DEG C/min, specifically chosen to use 10 DEG C/min, then the 3rd section of cooling
Temperature is reduced to 100 DEG C when the temperature fall time of drying and processing is 10min, i.e. 160min.3rd section of cooling drying and processing is in drop
Constant drying time after temperature can be 30min~60min, specifically from the 3rd section of cooling drying during 30min, i.e. 190min
The constant drying for processing terminates.
From the beginning of after 190min, the temperature of the 4th section of cooling drying and processing reduction can be 4th section of cooling drying and processing
Cooling difference 35%~45%, it is specifically chosen use the 40%, therefore the 4th section cooling drying and processing reduce temperature be 200 DEG C ×
40%=80 DEG C, now the constant drying temperature of the 4th section of cooling drying and processing is 100 DEG C -80 DEG C=20 DEG C, the 4th section of cooling
The cooling rate of drying and processing may range from 1 DEG C/min~15 DEG C/min, specifically chosen to use 15 DEG C/min, then the 4th section of cooling
Temperature is reduced to about 243 DEG C when the temperature fall time of drying and processing is about 53min, i.e. 243min.4th section of cooling drying and processing
Constant drying time after cooling can be 30min~60min, specifically from the 4th section of cooling during 30min, i.e. 273min
The constant drying of drying and processing terminates.
After four sections are lowered the temperature drying and processing, not only the impurity and catabolite of alignment materials layer surface is entirely removed
Totally, and temperature-fall period more relaxes, alignment materials layer can be preferably protected, so as to obtain the second best in quality both alignment layers.
Fig. 4 is refer to, in another specific example, using five sections of cooling drying and processings.Five sections of cooling drying and processings
Initial temperature be 245 DEG C (cleaning temperature of superheated steam is set to 245 DEG C during i.e. aforementioned cleaning), five sections cooling
The final temperature of drying and processing is 25 DEG C, therefore difference of lowering the temperature is 220 DEG C.
First paragraph lowers the temperature drying and processing from the beginning of zero moment, and the temperature that first paragraph cooling drying and processing is reduced can be cooling
The 5%~15% of difference, it is specifically chosen to use 10%, therefore the temperature that first paragraph cooling drying and processing is reduced is 220 DEG C × 10%
=22 DEG C, the constant drying temperature of now first paragraph cooling drying and processing is 245 DEG C -22 DEG C=223 DEG C.First paragraph cooling drying
The cooling rate of process may range from 1 DEG C/min~15 DEG C/min, specifically chosen to use 1 DEG C/min, then first paragraph cooling drying
The temperature fall time of process is reduced to 223 DEG C for 22min, i.e. 22min temperature.Perseverance of the first paragraph cooling drying and processing after cooling
It can be 30min~60min to determine drying time, the perseverance of drying and processing of specifically being lowered the temperature from first paragraph during 50min, i.e. 72min
Fixed drying terminates.
Second segment lowers the temperature drying and processing from the beginning of after 72min, and the temperature that second segment cooling drying and processing is reduced can be
The 10%~20% of cooling difference, it is specifically chosen to use 15%, therefore the temperature that reduces of second segment cooling drying and processing be 220 DEG C ×
15%=33 DEG C, the constant drying temperature of now second segment cooling drying and processing is 223 DEG C -33 DEG C=190 DEG C, second segment cooling
The cooling rate of drying and processing may range from 1 DEG C/min~15 DEG C/min, specifically chosen to use 3 DEG C/min, then second segment cooling
The temperature fall time of drying and processing is reduced to 190 DEG C for 11min, i.e. 83min temperature.Second segment lowers the temperature drying and processing after cooling
Constant drying time can be 30min~60min, specifically from during 30min, i.e. 113min second segment cooling drying and processing
Constant drying terminate.
From the beginning of after 113min, the temperature of the 3rd section of cooling drying and processing reduction can be 3rd section of cooling drying and processing
Cooling difference 15%~25%, it is specifically chosen use the 20%, therefore the 3rd section cooling drying and processing reduce temperature be 220 DEG C ×
20%=44 DEG C, now the constant drying temperature of the 3rd section of cooling drying and processing is 190 DEG C -44 DEG C=146 DEG C, the 3rd section of cooling
The cooling rate of drying and processing may range from 1 DEG C/min~15 DEG C/min, specifically chosen to use 4 DEG C/min, then the 3rd section of cooling
The temperature fall time of drying and processing is reduced to 146 DEG C for 11min, i.e. 124min temperature.3rd section of cooling drying and processing is in cooling
Constant drying time afterwards can be 30min~60min, specifically from during 30min, i.e. 154min the 3rd section cooling drying at
The constant drying of reason terminates.
From the beginning of after 154min, the temperature of the 4th section of cooling drying and processing reduction can be 4th section of cooling drying and processing
Cooling difference 20%~30%, it is specifically chosen use the 25%, therefore the 4th section cooling drying and processing reduce temperature be 220 DEG C ×
25%=55 DEG C, now the constant drying temperature of the 4th section of cooling drying and processing is 146 DEG C -55 DEG C=91 DEG C, the 4th section of cooling
The cooling rate of drying and processing may range from 1 DEG C/min~15 DEG C/min, specifically chosen to use 5 DEG C/min, then the 4th section of cooling
The temperature fall time of drying and processing is reduced to 91 DEG C for 11min, i.e. 165min temperature.4th section of cooling drying and processing is after cooling
Constant drying time can be 30min~60min, specifically from during 30min, i.e. 195min second segment cooling drying and processing
Constant drying terminate.
From the beginning of after 195min, the temperature of the 5th section of cooling drying and processing reduction can be 5th section of cooling drying and processing
Cooling difference 25%~35%, it is specifically chosen use the 30%, therefore the 5th section cooling drying and processing reduce temperature be 220 DEG C ×
30%=66 DEG C, now the constant drying temperature of the 5th section of cooling drying and processing is 91 DEG C -66 DEG C=25 DEG C, and the 5th section of cooling is dried
The cooling rate of dry-cure may range from 1 DEG C/min~15 DEG C/min, specifically chosen to use 6 DEG C/min, then the 5th section of cooling is dried
The temperature fall time of dry-cure is reduced to 25 DEG C for 11min, i.e. 206min temperature.5th section of cooling drying and processing is after cooling
Constant drying time can be 30min~60min, specifically from the 5th section during 30min, i.e. 236min drying and processing of lowering the temperature
Constant drying terminates.
After five sections are lowered the temperature drying and processing, not only the impurity and catabolite of alignment materials layer surface is entirely removed
Totally, and temperature-fall period further relaxes, alignment materials layer can be further protected, further improves the orientation for finally giving
Layer quality.
After above-mentioned cooling drying and processing, the present embodiment forms both alignment layers.
In the forming method of the both alignment layers that the present embodiment is provided, when the removal of impurity is gone, it is not necessary to carry out special heating
Admittedly roasting process step, but cleaning is carried out using overheated steam after alignment materials layer orientation process, and subsequently adopting
With cooling stoving process, the impurity and catabolite for making the alignment materials layer after orientation process is completely removed totally, due to profit
Play a part of to remove catabolite after illumination simultaneously with cleaning and cooling stoving process, therefore save processing step,
Technique output is improve, process simplification improves technique beat.
Further embodiment of this invention also provides a kind of forming method of liquid crystal panel, and the forming method includes：Phase is provided
To two substrates for arranging, wherein, two substrates are respectively one of color membrane substrates and array base palte.
Array base palte finally makes required tft array through the circulation of the operations such as film forming, exposure and etching on surface
Figure come, flow into CELL (into box) processing procedure.Color membrane substrates through film forming, exposure and etch etc. operation circulation, finally in table
The trichromatic figure of R, G, B required for making on face comes, and flows into CELL processing procedures.In CELL processing procedure processing procedure leading portions, at least one
The both alignment layers are formed using the forming method described in previous embodiment on the individual substrate.Specifically institute is formed on the substrate
The process for stating both alignment layers refers to previous embodiment corresponding contents.It is follow-up to carry out (ODF) and liquid crystal cell vacuum patch under liquid crystal drop again
The operations such as conjunction, until ultimately forming liquid crystal panel.
The forming method of the present embodiment as a result of previous embodiment forming method on substrate described at least one
Both alignment layers are formed, thus it is same with processing step is saved, technique output is improved, Simplified flowsheet improves the advantage of technique beat.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, without departing from this
In the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
The scope of restriction is defined.
Claims (13)
1. a kind of forming method of both alignment layers, it is characterised in that include：
Alignment materials layer is formed on substrate；
Orientation process is carried out to the alignment materials layer；
After the orientation process, using superheated steam or overheated gas cleaning is carried out；
After the cleaning, carry out lowering the temperature stoving process until forming both alignment layers；
The cooling stoving process is carried out using multistage cooling drying and processing, the initial temperature of the multistage cooling drying and processing is
The cleaning temperature of the superheated steam, the final temperature of the multistage cooling drying and processing is 20 DEG C~25 DEG C, the initial temperature
It is cooling difference to spend with the difference of the final temperature.
2. the forming method of both alignment layers as claimed in claim 1, it is characterised in that the orientation process be light orientation process,
Friction matching process or ion beam orientation are processed.
3. the forming method of both alignment layers as claimed in claim 1, it is characterised in that the temperature range of the superheated steam is
100 DEG C~250 DEG C.
4. the forming method of both alignment layers as claimed in claim 1, it is characterised in that the scavenging period scope of the cleaning
For 1min~60min.
5. the forming method of both alignment layers as claimed in claim 1, it is characterised in that the multistage cooling drying and processing is three sections
Cooling drying and processing, the temperature that first paragraph cooling drying and processing is reduced is the 10%~20% of the cooling difference, and second segment drops
The temperature that warm drying and processing is reduced is the 25%~35% of the cooling difference, and the temperature of the 3rd section of cooling drying and processing reduction is
The 50%~60% of the cooling difference, the constant drying time after per section of cooling drying and processing cooling is 30min~60min.
6. the forming method of both alignment layers as claimed in claim 1, it is characterised in that the multistage cooling drying and processing is four sections
Cooling drying and processing, the temperature that wherein first paragraph cooling drying and processing is reduced is the 5%~15% of cooling difference, second segment cooling
The temperature that drying and processing is reduced is the 15%~25% of cooling difference, and the temperature of the 3rd section of cooling drying and processing reduction is poor for cooling
The 25%~35% of value, the temperature of the 4th section of cooling drying and processing reduction is the 35%~45% of cooling difference, and per section of cooling is dried
Stable drying time after dry-cure cooling is 20min~60min.
7. the forming method of both alignment layers as claimed in claim 1, it is characterised in that the multistage cooling drying and processing is five sections
Cooling drying and processing, the temperature that wherein first paragraph cooling drying and processing is reduced is the 5%~15% of cooling difference, second segment cooling
The temperature that drying and processing is reduced is the 10%~20% of cooling difference, and the temperature of the 3rd section of cooling drying and processing reduction is poor for cooling
The 15%~25% of value, the temperature of the 4th section of cooling drying and processing reduction is the 20%~30% of cooling difference, the 5th section of cooling
Drying and processing reduce temperature be lower the temperature difference 25%~35%, per section cooling drying and processing cooling after stable drying time
For 10min~60min.
8. the forming method of the both alignment layers as described in claim 5,6 or 7, it is characterised in that the multistage is lowered the temperature drying and processing
Cooling rate scope be 1 DEG C/min~15 DEG C/min.
9. the forming method of both alignment layers as claimed in claim 1, it is characterised in that the material of the alignment materials layer is polyamides
At least one in amino acid, poly amic acid ester and polyimides.
10. the forming method of both alignment layers as claimed in claim 1, it is characterised in that the superheated steam is overheated steam
Or overheated organic steam；The overheated gas were hot inert gas.
The forming method of 11. both alignment layers as claimed in claim 10, it is characterised in that the overheated organic steam is overheated second
Alcohol steam.
The forming method of 12. both alignment layers as claimed in claim 11, it is characterised in that the overheated gas are overheated argon.
13. a kind of forming methods of liquid crystal panel, it is characterised in that include：
Two substrates that offer is oppositely arranged；
Forming method using the both alignment layers described in any one of claim 1 to 12 on substrate described at least one forms orientation
Layer.
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| CN101935533A (en) * | 2009-06-25 | 2011-01-05 | 智索株式会社 | Liquid crystal aligning agent, liquid crystal aligning film and liquid crystal display device |
| KR20120070319A (en) * | 2010-12-21 | 2012-06-29 | 엘지디스플레이 주식회사 | Method of fabricating alignment layer for liquid crystal display device |
| CN103091903A (en) * | 2013-01-10 | 2013-05-08 | 京东方科技集团股份有限公司 | Preparation method, liquid crystal display (LCD) substrate and device for photolysis-type alignment film |
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| KR20070077997A (en) * | 2006-01-25 | 2007-07-30 | 삼성전자주식회사 | Cleaning device and cleaning method using the same |
| CN101935533A (en) * | 2009-06-25 | 2011-01-05 | 智索株式会社 | Liquid crystal aligning agent, liquid crystal aligning film and liquid crystal display device |
| KR20120070319A (en) * | 2010-12-21 | 2012-06-29 | 엘지디스플레이 주식회사 | Method of fabricating alignment layer for liquid crystal display device |
| CN103091903A (en) * | 2013-01-10 | 2013-05-08 | 京东方科技集团股份有限公司 | Preparation method, liquid crystal display (LCD) substrate and device for photolysis-type alignment film |
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