CN104018225A - Neodymium-doped A3BGa3Si2O14 series crystal and preparation method and application thereof - Google Patents

Neodymium-doped A3BGa3Si2O14 series crystal and preparation method and application thereof Download PDF

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CN104018225A
CN104018225A CN201410258793.7A CN201410258793A CN104018225A CN 104018225 A CN104018225 A CN 104018225A CN 201410258793 A CN201410258793 A CN 201410258793A CN 104018225 A CN104018225 A CN 104018225A
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neodymium
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赵显�
刘彦庆
于法鹏
陈菲菲
侯帅
王正平
周莹
程秀凤
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Shandong University
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Abstract

The invention relates to neodymium-doped A3BGa3Si2O14 series crystal, comprising a series crystal of which the chemical formula is A3BGa3Si2O14, wherein A is Ca or Sr; B is Nb or Ta; according to the record, the neodymium-doped A3BGa3Si2O14 series crystal comprises Nd:Ga3TaGa3Si2O14, Nd:Sr3TaGa3Si2O14, Nd:Sr3NbGa3Si2O14 and Nd:Ca3NbGa3Si2O14. The four kinds of crystals can achieve self-frequency-doubling. The invention also provides a method for preparing the neodymium-doped A3BGa3Si2O14 series crystal. The invention also provides an application of the neodymium-doped A3BGa3Si2O14 series crystal. A commercial semiconductor laser pump (LD) of which the center wavelength is 808nm is adopted, gain medium and non-linear optical property of the neodymium-doped A3BGa3Si2O14 (A=Ca, Sr; B=Nb, Ta) series crystal are utilized, so as to obtain a green self-frequency-doubling laser of which the output wavelength is 533nm. The laser device has the advantages of high conversion efficiency, compact structure, miniaturization, high reliability, long service life and the like.

Description

Neodymium-doped A 3bGa 3si 2o 14serial crystal and preparation method thereof and application
Technical field
The present invention relates to a kind of neodymium-doped A 3bGa 3si 2o 14serial crystal and preparation method thereof and application, belong to the technical field of laser and nonlinear optics.
Background technology
All solid state green (light) laser has important application prospect in fields such as Laser Biomedicine, laser color demonstration, the storage of laser high density data, laser spectroscopy, Laser Printing, Laser Underwater imaging and communications.Active ions Nd 3+corresponding 4f 3/2→ 4f 11/2four-level structure transition spectral line (1.06 μ m) gain is strong, emission cross section is large, efficiency is high.Commercial semiconductor laser (GaAs/GaAlAs ,～808nm) pumping mix Nd 3+yAG, YVO 4, the laser crystals output rating such as YLF and YAP reached high level and realized 1.06 μ m solid statelaser commercializations.At present, what realize all solid state green LASER Light Source 0.530 μ m is mainly to obtain with KTP and the above-mentioned 1.06 μ m laser of LBO frequency-doubling crystal frequency multiplication, the advantage such as have that efficiency is high, light beam good, volume is little, stability is high and the life-span is long.The another kind of important way that obtains visible ray is to adopt laser self-frequency-doubling's technology.So-called self-frequency-doubling crystal, is exactly the performance that gain media itself also has nonlinear optics, and it can utilize the non-linear effect of matrix that the fundamental frequency light of active ions stimulated radiation generation is carried out to frequency inverted, obtains frequency doubled light.Therefore, this crystalloid must be not have symmetry centre, and processes according to phase matched direction.Compare with use the laser apparatus of laser crystals and frequency-doubling crystal simultaneously, the feature of self-frequency-doubling laser is that volume is little, simple in structure, and light path adjustment is easy, and the advantage that particularly cost is low makes it have important application prospect.
The crystal of realizing from frequency doubling green light laser operation at present mainly contains Nd:MgO:LiNbO 3, Nd xy 1-xal 3(BO 3) 4and Nd:ReCaO 4(BO 3) 3(Re:Y and Gd).Although LiNbO 3very large (the d of the effective nonlinear coefficient of crystal eff=5.3pm/V), but because the existence of photorefractive effect makes this crystal easily produce light injury.Although can weaken this effect by mix MgO in crystal, also affected the optical quality of crystal simultaneously, limited Nd 3+doping content.Nd xy 1-xal 3(BO 3) 4(NYAB) weak point of crystal is the bulky single crystal that is difficult for obtaining high optical quality.This is mainly because Nd 3+ion and Y 3+the radius of ion differs larger, and NYAB is not the homogeneous solid solution of NAB and YAB, but the complex body of NAB or YAB crystal and NYAB crystal.This just causes many structural defects in NYAB crystal, also makes the electric axis of crystal rotate, and produces electrical twining in crystal.NYAB is stronger in the absorption at 530nm place in addition, to very unfavorable from frequency multiplication output.Nd:ReCaO 4(BO 3) 3(Re:Y and Gd), although low but crystal has larger effective nonlinear coefficient symmetry of crystals, thermal property anisotropy is stronger, and practical application temperature control requires high.Therefore, be urgently necessary to explore the laser self frequency-doubling crystal of high comprehensive performance.
Summary of the invention
For the deficiencies in the prior art, the invention provides neodymium-doped A 3bGa 3si 2o 14serial crystal.
The present invention also provides a kind of above-mentioned neodymium-doped A 3bGa 3si 2o 14the preparation method of serial crystal.
The present invention also provides a kind of above-mentioned neodymium-doped A 3bGa 3si 2o 14the application of serial crystal.In practical application by Nd:A 3bGa 3si 2o 14serial crystal is processed into frequency doubling device along 1066nm phase matched direction.The present invention is to utilize the above-mentioned frequency doubling device of commercial semiconductor laser (LD, centre wavelength 808nm) pumping to obtain from frequency multiplication green laser (output wavelength 533nm).That this laser apparatus has is simple in structure, easy to use, good stability, the life-span is long, volume is little, transformation efficiency advantages of higher, is conducive to from frequency doubling green light laser developments and application.
Technical scheme of the present invention is as follows:
Professional technique term:
1. frequency multiplication (SHG)
Optical frequency-doubling claims again optical second harmonic, refers to because light and nonlinear medium (being generally crystal) interact, and making frequency is the phenomenon that the fundamental frequency light of ω changes the frequency doubled light of 2 ω into.This is a kind of common and important second order nonlinear optical effect.
2. from frequency multiplication (SFD)
So-called is exactly the performance that gain media itself also has nonlinear optics from frequency multiplication, and it can utilize the non-linear effect of matrix that the fundamental frequency light of active ions stimulated radiation generation is carried out to frequency inverted, obtains frequency doubled light.Therefore, this crystalloid must be not have symmetry centre, and processes according to phase matched direction.
Summary of the invention
The present invention relates to a kind of neodymium-doped A 3bGa 3si 2o 14serial crystal, comprises by chemical formula Nd:A 3bGa 3si 2o 14serial crystal, wherein, A is Ca or Sr, described B is Nb or Ta; According to above-mentioned record, Nd:A 3bGa 3si 2o 14serial crystal comprises: Nd:Ca 3taGa 3si 2o 14, Nd:Sr 3taGa 3si 2o 14, Nd:Sr 3nbGa 3si 2o 14and Nd:Ca 3nbGa 3si 2o 14, these four kinds of crystal all can be realized from frequency multiplication.The present invention also provides a kind of above-mentioned neodymium-doped A 3bGa 3si 2o 14the preparation method of serial crystal
The present invention also provides a kind of above-mentioned neodymium-doped A 3bGa 3si 2o 14the application of serial crystal, adopting commercial centre wavelength is the diode-end-pumped (LD) of 808nm, utilizes neodymium-doped A 3bGa 3si 2o 14(A=Ca, Sr; B=Nb, Ta) performance of its gain media of serial crystal and nonlinear optics, obtain the green glow self-frequency-doubling laser of output wavelength 533nm, this laser apparatus has the advantages such as transformation efficiency is high, compact construction, miniaturization, reliability is high, the life-span is long.
Detailed Description Of The Invention
A kind of neodymium-doped A 3bGa 3si 2o 14serial crystal, comprises by chemical formula A 3bGa 3si 2o 14serial crystal, wherein crystal-chemical formula Nd:A 3bGa 3si 2o 14wherein, A is Ca or Sr, and described B is Nb or Ta.
Preferred according to the present invention, described neodymium-doped A 3bGa 3si 2o 14in serial crystal, the doping content of neodymium ion is 0.3～10at%.
A kind of above-mentioned neodymium-doped A 3bGa 3si 2o 14the preparation method of serial crystal, comprises the steps:
(1) according to prior art, carry out stoichiometric ratio batching, then carry out successively batch mixing, imitation frosted glass, binder, the material step of reburning, fully after solid state reaction, obtain Nd:A 3bGa 3si 2o 14polycrystalline;
(2) by Nd:A obtained above 3bGa 3si 2o 14polycrystalline is put in Iridium Crucible, adopts high temperature single crystal pulling stove to grow, and is grown to serve as neodymium-doped A 3bGa 3si 2o 14crystal;
(3) to described Nd:A 3bGa 3si 2o 14serial crystal carries out corner cut processing.
Preferred according to the present invention, in described step (2), adopt high temperature single crystal pulling stove to grow, its speed of growth is 0.2～2mm/h, and Crystal Rotation speed is 5～20r/min, and growth time is 3～7 days, is grown to serve as Nd:A 3bGa 3si 2o 14serial crystal.
Preferred according to the present invention, in described step (2), treat described Nd:A 3bGa 3si 2o 14after crystal growth finishes, by Nd:A obtained above 3bGa 3si 2o 14serial crystal is annealed, and annealing temperature is at 1000-1400 ℃.The advantage of design is in order to improve the quality of crystal herein.
Preferred according to the present invention, in described step (2), treat described Nd:A 3bGa 3si 2o 14after polycrystalline growth finishes, after being down to 16-26 ℃ by the rate of temperature fall of 10～50 ℃/h, high temperature single crystal pulling stove takes out crystal.
Neodymium-doped A to growth 3bGa 3si 2o 14serial crystal carries out fluorescence Spectra test, finds that its hyperfluorescenceZeng Yongminggaoyingguang emission peak is near 1066nm, so need to be according to phase matched direction calculating and the processing of 1066nm in laser self-frequency-doubling's device.Method for expressing (the θ of concrete 1066nm frequency multiplication corner cut, φ), above-mentioned corner cut is followed crystallographic International Usage, previous angle θ is the angle for Z axis in space cut direction and space coordinates, a rear angle φ is the angle of the space cut direction projection in XY plane and X-axis in space coordinates, and wherein X-axis, Y-axis and Z axis are three-dimensional coordinate axis.
Preferred according to the present invention, in described step (3), as described neodymium-doped A 3bGa 3si 2o 14serial crystal is Nd:Ca 3taGa 3si 2o 14time, 1066nm frequency multiplication corner cut scope is (33 °≤θ≤43 °, 25 °≤φ≤35 °) and (56 °≤θ≤66 °, 0 °≤φ≤5 °), along this corner cut by Nd:Ca 3taGa 3si 2o 14crystal is processed into from frequency doubling device.Consider crystal orientation, processing and instrumental error, Nd:Ca 3taGa 3si 2o 14the concrete corner cut scope of crystal is (28 °≤θ≤48 °, 20 °≤φ≤40 °) and (51 °≤θ≤71 °, 0 °≤φ≤10 °), along this corner cut, is processed into from frequency doubling device.
Preferred according to the present invention, in described step (3), as described neodymium-doped A 3bGa 3si 2o 14serial crystal is Nd:Sr 3nbGa 3si 2o 14time, the concrete corner cut scope of 1066nm frequency multiplication is (40 °≤θ≤60 °, 20 °≤φ≤40 °) and (52 °≤θ≤72 °, 0 °≤φ≤10 °), along this corner cut by Nd:Sr 3nbGa 3si 2o 14crystal is processed into from frequency doubling device.
Preferred according to the present invention, in described step (3), as described neodymium-doped A 3bGa 3si 2o 14serial crystal is Nd:Sr 3taGa 3si 2o 14time, the concrete corner cut scope of 1066nm frequency multiplication is (22 °≤θ≤42 °, 20 °≤φ≤40 °) and (53 °≤θ≤73 °, 0 °≤φ≤10 °), along this corner cut by Nd:Sr 3taGa 3si 2o 14crystal is processed into from frequency doubling device.
Preferred according to the present invention, in described step (3), as described neodymium-doped A 3bGa 3si 2o 14serial crystal is Nd:Ca 3nbGa 3si 2o 14time, the concrete corner cut scope of 1066nm frequency multiplication is (30 °≤θ≤50 °, 20 °≤φ≤40 °) and (42 °≤θ≤62 °, 0 °≤φ≤10 °), along this corner cut by Nd:Ca 3nbGa 3si 2o 14crystal is processed into from frequency doubling device.
Above-mentioned neodymium-doped A 3bGa 3si 2o 14the application of serial crystal:
A kind of neodymium-doped A 3bGa 3si 2o 14serial crystal, from frequency doubling green light laser apparatus, comprises business architecture wavelength 808nm LD, neodymium-doped A described in described business architecture wavelength 808nm LD pumping 3bGa 3si 2o 14(A=Ca, Sr; B=Nb, Ta) serial self-frequency-doubling crystal's device, with the green laser obtaining.Described neodymium-doped A 3bGa 3si 2o 14serial crystal from frequency doubling green light laser apparatus center output wavelength near 533nm.Described pumping LD mode of operation is pulse running or continuous operation, or adopts output wavelength to may be tuned to 808nm ti sapphire laser to work as pumping.
Preferred according to the present invention, described neodymium-doped A 3bGa 3si 2o 14series self-frequency-doubling crystal device is at described neodymium-doped A 3bGa 3si 2o 14the application of serial crystal in frequency doubling green light laser apparatus:
By neodymium-doped A 3bGa 3si 2o 14series self-frequency-doubling crystal be placed in the water-cooled clamp of center grooved, described neodymium-doped A 3bGa 3si 2o 14series self-frequency-doubling crystal's the logical light face in front and back keeps logical light state, other face is surrounded and is convenient to heat radiation by silver foil, then the water-cooled clamp of described center grooved is placed in laserresonator, wherein resonator cavity incident mirror is coated with 808nm anti-reflection film, 532nm high-reflecting film, 1055～1070nm high-reflecting film, and resonator cavity outgoing mirror is coated with 808nm high-reflecting film, 1055～1070nm high-reflecting film and 532nm anti-reflection film;
The laser of the 808nm launching with LD is by the direct end pumping neodymium-doped of described resonator cavity incident mirror A 3bGa 3si 2o 14series self-frequency-doubling crystal, it is 533nm from frequency doubling green light that resonator cavity outgoing mirror rear end produces wavelength.
Preferred according to the present invention, described neodymium-doped A 3bGa 3si 2o 14series self-frequency-doubling crystal device is at described neodymium-doped A 3bGa 3si 2o 14the application of serial crystal in frequency doubling green light laser apparatus:
At described neodymium-doped A 3bGa 3si 2o 14the pump light plane of incidence plating 808nm anti-reflection film of series self-frequency-doubling crystal device, 532nm high-reflecting film, 1055～1070nm high-reflecting film, exit facet plating 808nm high-reflecting film, 1055～1070nm high-reflecting film and 532nm anti-reflection film.The advantage of design is herein, makes neodymium-doped A 3bGa 3si 2o 14series self-frequency-doubling crystal device front/rear end has laserresonator of one's own, by shortening cavity length, reduces laser apparatus volume, can improve laser apparatus green glow output rating simultaneously.
The invention has the advantages that:
1, neodymium-doped A of the present invention 3bGa 3si 2o 14(A=Ca, Sr; B=Nb, Ta) serial self-frequency-doubling crystal, easily growth, laser activity are good, nonlinear factor and allow that angle is large, thermal property is superior, and the present invention has simple in structure, stable performance, transformation efficiency advantages of higher from frequency multiplication green laser.
2, neodymium-doped A of the present invention 3bGa 3si 2o 14(A=Ca, Sr; B=Nb, Ta) serial self-frequency-doubling crystal's green laser output center wavelength is 533nm, with other Nd:MgO:LiNbO 3, Nd xy 1-xal 3(BO 3) 4and Nd:ReCaO 4(BO 3) 3(Re:Y and Gd) self-frequency-doubling crystal's green (light) laser emission wavelength is different.
Accompanying drawing explanation
Fig. 1, neodymium-doped A 3bGa 3si 2o 14(A=Ca, Sr; B=Nb, Ta) serial crystal is from frequency doubling device machining sketch chart;
Fig. 2, based on neodymium-doped A 3bGa 3si 2o 14(A=Ca, Sr; B=Nb, Ta) serial self-frequency-doubling crystal's green (light) laser, before and after crystal, place suitable lens;
Fig. 3, based on neodymium-doped A 3bGa 3si 2o 14(A=Ca, Sr; B=Nb, Ta) serial self-frequency-doubling crystal's green (light) laser, crystal rear and front end is coated with suitable film system;
Fig. 4, neodymium-doped Ca 3taGa 3si 2o 14(28 °≤θ≤48 °, 20 °≤φ≤40 °) are from frequency doubling device green glow output spectrum figure; In Fig. 4, X-coordinate represents wavelength, and ordinate zou represents intensity, this tangential green glow that can obtain 532.88nm from frequency doubling device;
Fig. 5, neodymium-doped Ca 3taGa 3si 2o 14(51 °≤θ≤71 °, 0 °≤φ≤10 °) are from frequency doubling device green glow output spectrum figure; In Fig. 5, X-coordinate represents wavelength, and ordinate zou represents intensity, this tangential green glow that can obtain 533.13nm from frequency doubling device).
Embodiment:
Below in conjunction with embodiment and Figure of description, the present invention is described in detail.
Embodiment 1,
A kind of neodymium-doped A 3bGa 3si 2o 14serial crystal, comprises by chemical formula A 3bGa 3si 2o 14serial crystal, wherein crystal-chemical formula Nd:A 3bGa 3si 2o 14wherein, A is Ca, and described B is Ta, is Nd:Ca 3taGa 3si 2o 14crystal.Wherein the doping content of neodymium ion is 0.3～10at%.
A kind of above-mentioned Nd:Ca 3taGa 3si 2o 14the preparation method of crystal, comprises the steps:
(1) according to prior art, carry out stoichiometric ratio batching, then carry out successively batch mixing, imitation frosted glass, binder, the material step of reburning, fully after solid state reaction, obtain Nd:Ca 3taGa 3si 2o 14polycrystalline;
(2) by Nd:Ca obtained above 3taGa 3si 2o 14polycrystalline is put in Iridium Crucible, adopts high temperature single crystal pulling stove to grow, and is grown to serve as Nd:Ca 3taGa 3si 2o 14crystal;
(3) to described Nd:Ca 3taGa 3si 2o 14crystal carries out corner cut processing.
In described step (2), adopt high temperature single crystal pulling stove to grow, its speed of growth is 0.2～2mm/h, and Crystal Rotation speed is 5～20r/min, and growth time is 3～7 days, is grown to serve as Nd:Ca 3taGa 3si 2o 14crystal.
Neodymium-doped Ca to growth 3taGa 3si 2o 14crystal carries out fluorescence Spectra test, finds that its hyperfluorescenceZeng Yongminggaoyingguang emission peak is near 1066nm, so need to be according to phase matched direction calculating and the processing of 1066nm in laser self-frequency-doubling's device.Method for expressing (the θ of concrete 1066nm frequency multiplication corner cut, φ), above-mentioned corner cut is followed crystallographic International Usage, previous angle θ is the angle for Z axis in space cut direction and space coordinates, a rear angle φ is the angle of the space cut direction projection in XY plane and X-axis in space coordinates, and wherein X-axis, Y-axis and Z axis are three-dimensional coordinate axis.
Described Nd:Ca 3taGa 3si 2o 14crystal, 1066nm frequency multiplication corner cut scope is (33 °≤θ≤43 °, 25 °≤φ≤35 °) and (56 °≤θ≤66 °, 0 °≤φ≤5 °), along this corner cut by Nd:Ca 3taGa 3si 2o 14crystal is processed into from frequency doubling device.Consider crystal orientation, processing and instrumental error, Nd:Ca 3taGa 3si 2o 14the corner cut scope of crystal is (28 °≤θ≤48 °, 20 °≤φ≤40 °) and (51 °≤θ≤71 °, 0 °≤φ≤10 °), along this corner cut, is processed into from frequency doubling device.Quartz crystal device sample size is: i * i * l mm 3(l represents frequency multiplication direction length, 2≤l≤20; 3≤i≤10), logical light two ends finishing polish, wherein polishing degree 30 ' within.
Above-mentioned neodymium-doped Ca 3taGa 3si 2o 14the application of crystal:
A kind of neodymium-doped Ca 3taGa 3si 2o 14crystal, from frequency doubling green light laser apparatus, comprises business architecture wavelength 808nm LD, neodymium-doped Ca described in described business architecture wavelength 808nm LD pumping 3taGa 3si 2o 14self-frequency-doubling crystal's device, with the green laser obtaining.
Described neodymium-doped Ca 3taGa 3si 2o 14self-frequency-doubling crystal's device is at described neodymium-doped A 3bGa 3si 2o 14the application of serial crystal in frequency doubling green light laser apparatus:
By neodymium-doped Ca 3taGa 3si 2o 14self-frequency-doubling crystal's device is placed in the water-cooled clamp of center grooved, described neodymium-doped Ca 3taGa 3si 2o 14the logical light face in front and back of self-frequency-doubling crystal's device keeps logical light state, other face is surrounded and is convenient to heat radiation by silver foil, then the water-cooled clamp of described center grooved is placed in laserresonator, wherein resonator cavity incident mirror is coated with 808nm anti-reflection film, 532nm high-reflecting film, 1055～1070nm high-reflecting film, and resonator cavity outgoing mirror is coated with 808nm high-reflecting film, 1055～1070nm high-reflecting film and 532nm anti-reflection film; Adopt the temperature of the cooling control crystal of constant temperature water tank 10～20 ℃ of left and right.
The laser of the 808nm launching with LD is by the direct end pumping neodymium-doped of described resonator cavity incident mirror Ca 3taGa 3si 2o 14self-frequency-doubling crystal's device, it is 533nm from frequency doubling green light that resonator cavity outgoing mirror rear end produces wavelength.
Embodiment 2,
According to the Nd:Ca described in embodiment 1 3taGa 3si 2o 14the preparation method of crystal, its difference is, in described step (2), treats described neodymium-doped Ca 3taGa 3si 2o 14after crystal growth finishes, by neodymium-doped Ca obtained above 3taGa 3si 2o 14crystal is annealed, and annealing temperature is at 1000-1400 ℃.The advantage of design is in order to improve the quality of crystal herein.
Embodiment 3,
According to the Nd:Ca described in embodiment 1 3taGa 3si 2o 14the preparation method of crystal, its difference is, in described step (2), treats described neodymium-doped Ca 3taGa 3si 2o 14after crystal growth finishes, after being down to 16-26 ℃ by the rate of temperature fall of 10～50 ℃/h, high temperature single crystal pulling stove takes out crystal.
Embodiment 4,
A kind of neodymium-doped A 3bGa 3si 2o 14serial crystal, comprises by chemical formula A 3bGa 3si 2o 14serial crystal, wherein crystal-chemical formula is A 3bGa 3si 2o 14wherein, A is Ca; Described B is Nb, is Nd:Ca 3nbGa 3si 2o 14crystal.Wherein the doping content of neodymium ion is 0.3～10at%.
A kind of above-mentioned Nd:Ca 3nbGa 3si 2o 14the preparation method of crystal, comprises the steps:
(1) according to prior art, carry out stoichiometric ratio batching, then carry out successively batch mixing, imitation frosted glass, binder, the material step of reburning, fully after solid state reaction, obtain neodymium-doped Ca 3nbGa 3si 2o 14polycrystalline;
(2) by neodymium-doped Ca obtained above 3nbGa 3si 2o 14polycrystalline is put in Iridium Crucible, adopts high temperature single crystal pulling stove to grow, and is grown to serve as neodymium-doped Ca 3nbGa 3si 2o 14crystal;
(3) to described neodymium-doped Ca 3nbGa 3si 2o 14crystal carries out corner cut processing.
In described step (2), adopt high temperature single crystal pulling stove to grow, its speed of growth is 0.2～2mm/h, and Crystal Rotation speed is 5～20r/min, and growth time is 3～7 days, is grown to serve as neodymium-doped Ca 3nbGa 3si 2o 14crystal.
Neodymium-doped Ca to growth 3nbGa 3si 2o 14crystal carries out fluorescence Spectra test, finds that its hyperfluorescenceZeng Yongminggaoyingguang emission peak is near 1066nm, so need to be according to phase matched direction calculating and the processing of 1066nm in laser self-frequency-doubling's device.Method for expressing (the θ of concrete 1066nm frequency multiplication corner cut, φ), above-mentioned corner cut is followed crystallographic International Usage, previous angle θ is the angle for Z axis in space cut direction and space coordinates, a rear angle φ is the angle of the space cut direction projection in XY plane and X-axis in space coordinates, and wherein X-axis, Y-axis and Z axis are three-dimensional coordinate axis.
Described Nd:Ca 3nbGa 3si 2o 14crystal, the concrete corner cut scope of 1066nm frequency multiplication is (30 °≤θ≤50 °, 20 °≤φ≤40 °) and (42 °≤θ≤62 °, 0 °≤φ≤10 °), along this corner cut by Nd:Ca 3nbGa 3si 2o 14crystal is processed into from frequency doubling device.Crystal prototype is of a size of: i * i * l mm 3(l represents frequency multiplication direction length, 3≤l≤15; 3≤i≤6), logical light two ends finishing polish, wherein polishing degree 30 ' within.
Above-mentioned neodymium-doped Ca 3nbGa 3si 2o 14the application of crystal:
A kind of neodymium-doped Ca 3nbGa 3si 2o 14crystal, from frequency doubling green light laser apparatus, comprises business architecture wavelength 808nm LD, neodymium-doped Ca described in described business architecture wavelength 808nm LD pumping 3nbGa 3si 2o 14self-frequency-doubling crystal's device, with the green laser obtaining.
Described neodymium-doped Ca 3nbGa 3si 2o 14self-frequency-doubling crystal's device is at described neodymium-doped A 3bGa 3si 2o 14the application of serial crystal in frequency doubling green light laser apparatus:
By neodymium-doped Ca 3nbGa 3si 2o 14self-frequency-doubling crystal's device is placed in the water-cooled clamp of center grooved, described neodymium-doped Ca 3nbGa 3si 2o 14the logical light face in front and back of self-frequency-doubling crystal's device keeps logical light state, other face is surrounded and is convenient to heat radiation by silver foil, then the water-cooled clamp of described center grooved is placed in laserresonator, wherein resonator cavity incident mirror is coated with 808nm anti-reflection film, 532nm high-reflecting film, 1055～1070nm high-reflecting film, and resonator cavity outgoing mirror is coated with 808nm high-reflecting film, 1055～1070nm high-reflecting film and 532nm anti-reflection film; Adopt the temperature of the cooling control crystal of constant temperature water tank 10～20 ℃ of left and right.
The laser of the 808nm launching with LD is by the direct end pumping neodymium-doped of described resonator cavity incident mirror Ca 3nbGa 3si 2o 14self-frequency-doubling crystal's device, it is 533nm from frequency doubling green light that resonator cavity outgoing mirror rear end produces wavelength.
Embodiment 5,
A kind of neodymium-doped A 3bGa 3si 2o 14serial crystal, comprises by chemical formula A 3bGa 3si 2o 14serial crystal, wherein crystal-chemical formula is A 3bGa 3si 2o 14wherein, A is Sr; Described B is Ta, is Nd:Sr 3taGa 3si 2o 14crystal.Wherein the doping content of neodymium ion is 0.3～10at%.
A kind of above-mentioned Nd:Sr 3taGa 3si 2o 14the preparation method of crystal, comprises the steps:
(1) according to prior art, carry out stoichiometric ratio batching, then carry out successively batch mixing, imitation frosted glass, binder, the material step of reburning, fully after solid state reaction, obtain neodymium-doped Sr 3taGa 3si 2o 14polycrystalline;
(2) by neodymium-doped Sr obtained above 3taGa 3si 2o 14polycrystalline is put in Iridium Crucible, adopts high temperature single crystal pulling stove to grow, and is grown to serve as neodymium-doped Sr 3taGa 3si 2o 14crystal;
(3) to described neodymium-doped Sr 3taGa 3si 2o 14crystal carries out corner cut processing.
In described step (2), adopt high temperature single crystal pulling stove to grow, its speed of growth is 0.2～2mm/h, and Crystal Rotation speed is 5～20r/min, and growth time is 3～7 days, grows neodymium-doped Sr 3taGa 3si 2o 14crystal.
Neodymium-doped Sr to growth 3taGa 3si 2o 14crystal carries out fluorescence Spectra test, finds that its hyperfluorescenceZeng Yongminggaoyingguang emission peak is near 1066nm, so need to be according to phase matched direction calculating and the processing of 1066nm in laser self-frequency-doubling's device.Method for expressing (the θ of concrete 1066nm frequency multiplication corner cut, φ), above-mentioned corner cut is followed crystallographic International Usage, previous angle θ is the angle for Z axis in space cut direction and space coordinates, a rear angle φ is the angle of the space cut direction projection in XY plane and X-axis in space coordinates, and wherein X-axis, Y-axis and Z axis are three-dimensional coordinate axis.
Described Nd:Sr 3taGa 3si 2o 14crystal, the concrete corner cut scope of 1066nm frequency multiplication is (22 °≤θ≤42 °, 20 °≤φ≤40 °) and (53 °≤θ≤73 °, 0 °≤φ≤10 °), along this corner cut by Nd:Sr 3taGa 3si 2o 14crystal is processed into from frequency doubling device.Quartz crystal device sample size is: i * i * l mm 3(l represents frequency multiplication direction length, 2≤l≤20; 3≤i≤10), logical light two ends finishing polish, wherein polishing degree 30 ' within.
Above-mentioned neodymium-doped Sr 3taGa 3si 2o 14the application of crystal:
A kind of neodymium-doped Sr 3taGa 3si 2o 14crystal, from frequency doubling green light laser apparatus, comprises business architecture wavelength 808nm LD, neodymium-doped Sr described in described business architecture wavelength 808nm LD pumping 3taGa 3si 2o 14self-frequency-doubling crystal's device, with the green laser obtaining.
Described neodymium-doped Sr 3taGa 3si 2o 14self-frequency-doubling crystal's device is at described neodymium-doped A 3bGa 3si 2o 14the application of serial crystal in frequency doubling green light laser apparatus:
By neodymium-doped Sr 3taGa 3si 2o 14self-frequency-doubling crystal's device is placed in the water-cooled clamp of center grooved, described neodymium-doped Sr 3taGa 3si 2o 14the logical light face in front and back of self-frequency-doubling crystal's device keeps logical light state, other face is surrounded and is convenient to heat radiation by silver foil, then the water-cooled clamp of described center grooved is placed in laserresonator, wherein resonator cavity incident mirror is coated with 808nm anti-reflection film, 532nm high-reflecting film, 1055～1070nm high-reflecting film, and resonator cavity outgoing mirror is coated with 808nm high-reflecting film, 1055～1070nm high-reflecting film and 532nm anti-reflection film; Adopt the temperature of the cooling control crystal of constant temperature water tank 5～20 ℃ of left and right.
The laser of the 808nm launching with LD is by the direct end pumping neodymium-doped of described resonator cavity incident mirror Sr 3taGa 3si 2o 14self-frequency-doubling crystal's device, it is 533nm from frequency doubling green light that resonator cavity outgoing mirror rear end produces wavelength.
Embodiment 6,
A kind of neodymium-doped A 3bGa 3si 2o 14serial crystal, comprises by chemical formula A 3bGa 3si 2o 14serial crystal, wherein crystal-chemical formula is A 3bGa 3si 2o 14wherein, A is Sr; Described B is Nb, is Nd:Sr 3nbGa 3si 2o 14crystal.Wherein the doping content of neodymium ion is 0.3～10at%.
A kind of above-mentioned Nd:Sr 3nbGa 3si 2o 14the preparation method of crystal, comprises the steps:
(1) according to prior art, carry out stoichiometric ratio batching, then carry out successively batch mixing, imitation frosted glass, binder, the material step of reburning, fully after solid state reaction, obtain neodymium-doped Sr 3nbGa 3si 2o 14polycrystalline;
(2) by neodymium-doped Sr obtained above 3nbGa 3si 2o 14polycrystalline is put in Iridium Crucible, adopts high temperature single crystal pulling stove to grow, and is grown to serve as neodymium-doped Sr 3nbGa 3si 2o 14crystal;
(3) to described neodymium-doped Sr 3nbGa 3si 2o 14crystal carries out corner cut processing.
In described step (2), adopt high temperature single crystal pulling stove to grow, its speed of growth is 0.2～2mm/h, and Crystal Rotation speed is 5～20r/min, and growth time is 3～7 days, is grown to serve as neodymium-doped Sr 3nbGa 3si 2o 14crystal.
Neodymium-doped Sr to growth 3nbGa 3si 2o 14crystal carries out fluorescence Spectra test, finds that its hyperfluorescenceZeng Yongminggaoyingguang emission peak is near 1066nm, so need to be according to phase matched direction calculating and the processing of 1066nm in laser self-frequency-doubling's device.Method for expressing (the θ of concrete 1066nm frequency multiplication corner cut, φ), above-mentioned corner cut is followed crystallographic International Usage, previous angle θ is the angle for Z axis in space cut direction and space coordinates, a rear angle φ is the angle of the space cut direction projection in XY plane and X-axis in space coordinates, and wherein X-axis, Y-axis and Z axis are three-dimensional coordinate axis.
Described Nd:Sr 3nbGa 3si 2o 14crystal, the concrete corner cut scope of 1066nm frequency multiplication is (40 °≤θ≤60 °, 20 °≤φ≤40 °) and (52 °≤θ≤72 °, 0 °≤φ≤10 °), along this corner cut by Nd:Sr 3nbGa 3si 2o 14crystal is processed into from frequency doubling device.Crystal prototype is of a size of: i * i * l mm 3(l represents frequency multiplication direction length, 3≤l≤15; 3≤i≤6), logical light two ends finishing polish, wherein polishing degree 30 ' within.
Above-mentioned neodymium-doped Sr 3nbGa 3si 2o 14the application of crystal:
A kind of neodymium-doped Sr 3nbGa 3si 2o 14crystal, from frequency doubling green light laser apparatus, comprises business architecture wavelength 808nm LD, neodymium-doped Sr described in described business architecture wavelength 808nm LD pumping 3nbGa 3si 2o 14self-frequency-doubling crystal's device, with the green laser obtaining.
Described neodymium-doped Sr 3nbGa 3si 2o 14self-frequency-doubling crystal's device is at described neodymium-doped A 3bGa 3si 2o 14the application of serial crystal in frequency doubling green light laser apparatus:
By neodymium-doped Sr 3nbGa 3si 2o 14self-frequency-doubling crystal's device is placed in the water-cooled clamp of center grooved, described neodymium-doped Sr 3nbGa 3si 2o 14the logical light face in front and back of self-frequency-doubling crystal's device keeps logical light state, other face is surrounded and is convenient to heat radiation by silver foil, then the water-cooled clamp of described center grooved is placed in laserresonator, wherein resonator cavity incident mirror is coated with 808nm anti-reflection film, 532nm high-reflecting film, 1055～1070nm high-reflecting film, and resonator cavity outgoing mirror is coated with 808nm high-reflecting film, 1055～1070nm high-reflecting film and 532nm anti-reflection film; Adopt the temperature of the cooling control crystal of constant temperature water tank 5～20 ℃ of left and right.
The laser of the 808nm launching with LD is by the direct end pumping neodymium-doped of described resonator cavity incident mirror Sr 3nbGa 3si 2o 14self-frequency-doubling crystal's device, it is 533nm from frequency doubling green light that resonator cavity outgoing mirror rear end produces wavelength.
Embodiment 7,
Neodymium-doped Ca as described in Example 1 3taGa 3si 2o 14self-frequency-doubling crystal's device is at described neodymium-doped A 3bGa 3si 2o 14the application of serial crystal in frequency doubling green light laser apparatus:
At described neodymium-doped Ca 3taGa 3si 2o 14the pump light plane of incidence plating 808nm anti-reflection film of self-frequency-doubling crystal's device, 532nm high-reflecting film, 1055～1070nm high-reflecting film, exit facet plating 808nm high-reflecting film, 1055～1070nm high-reflecting film and 532nm anti-reflection film, then be put into (the logical light face in front and back of crystal keeps logical light state, and other four faces are surrounded and are convenient to heat radiation by silver foil) on special crystal fixture.Adopt the temperature of the cooling control crystal of constant temperature water tank 10～20 ℃ of left and right.
Adopt LD (808nm) pumping of continuous wave output, adjust chucking position, laser (808nm) is passed into along crystal double frequency direction, after crystal light output end, can obtain 533nm from frequency doubling green light.
Embodiment 8,
Neodymium-doped Ca as described in Example 4 3nbGa 3si 2o 14self-frequency-doubling crystal's device is at described neodymium-doped A 3bGa 3si 2o 14the application of serial crystal in frequency doubling green light laser apparatus:
At described neodymium-doped Ca 3nbGa 3si 2o 14the pump light plane of incidence plating 808nm anti-reflection film of self-frequency-doubling crystal's device, 532nm high-reflecting film, 1055～1070nm high-reflecting film, exit facet plating 808nm high-reflecting film, 1055～1070nm high-reflecting film and 532nm anti-reflection film, then be put into (the logical light face in front and back of crystal keeps logical light state, and other four faces are surrounded and are convenient to heat radiation by silver foil) on special crystal fixture.Adopt the temperature of the cooling control crystal of constant temperature water tank 5～20 ℃ of left and right.
Adopt the ti sapphire laser of pulse output, adjust chucking position, LD pump light is passed into along crystal double frequency direction, after crystal light output end, can obtain 533nm from frequency doubling green light.
Embodiment 9,
Neodymium-doped Ca as described in Example 7 3taGa 3si 2o 14self-frequency-doubling crystal's device is at described neodymium-doped A 3bGa 3si 2o 14the application of serial crystal in frequency doubling green light laser apparatus:
Its difference is:
Adopt the ti sapphire laser of pulse output, adjust chucking position, laser (808nm) is passed into along crystal double frequency direction, after crystal light output end, can obtain 533nm from frequency doubling green light.

Claims (10)

1. a neodymium-doped A 3bGa 3si 2o 14serial crystal, comprises by chemical formula A 3bGa 3si 2o 14serial crystal, its feature exists, wherein crystal-chemical formula Nd:A 3bGa 3si 2o 14wherein, A is Ca or Sr, and described B is Nb or Ta.
2. a kind of neodymium-doped A according to claim 1 3bGa 3si 2o 14serial crystal, is characterized in that, described neodymium-doped A 3bGa 3si 2o 14in serial crystal, the doping content of neodymium ion is 0.3～10at%.
3. a neodymium-doped A as claimed in claim 1 or 2 3bGa 3si 2o 14the preparation method of serial crystal, is characterized in that, comprises the steps:
(1) according to prior art, carry out stoichiometric ratio batching, then carry out successively batch mixing, imitation frosted glass, binder, the material step of reburning, fully after solid state reaction, obtain neodymium-doped A 3bGa 3si 2o 14polycrystalline;
(2) by neodymium-doped A obtained above 3bGa 3si 2o 14polycrystalline is put in Iridium Crucible, adopts high temperature single crystal pulling stove to grow, and is grown to serve as neodymium-doped A 3bGa 3si 2o 14serial crystal;
(3) to described neodymium-doped A 3bGa 3si 2o 14serial crystal carries out corner cut processing.
4. neodymium-doped A as claimed in claim 3 3bGa 3si 2o 14the preparation method of serial crystal, is characterized in that, in described step (2), adopts high temperature single crystal pulling stove to grow, and its speed of growth is 0.2～2mm/h, and Crystal Rotation speed is 5～20r/min, and growth time is 3～7 days, is grown to serve as neodymium-doped A 3bGa 3si 2o 14serial crystal.
5. neodymium-doped A as claimed in claim 3 3bGa 3si 2o 14the preparation method of serial crystal, is characterized in that, in described step (2), treats described neodymium-doped A 3bGa 3si 2o 14after serial crystal growth finishes, by neodymium-doped A obtained above 3bGa 3si 2o 14serial crystal is annealed, and annealing temperature is at 1000-1400 ℃.
6. neodymium-doped A as claimed in claim 3 3bGa 3si 2o 14the preparation method of serial crystal, is characterized in that, in described step (2), treats described neodymium-doped A 3bGa 3si 2o 14after serial crystal growth finishes, after being down to 16-26 ℃ by the rate of temperature fall of 10～50 ℃/h, high temperature single crystal pulling stove takes out crystal.
7. neodymium-doped A as claimed in claim 3 3bGa 3si 2o 14the preparation method of serial crystal, is characterized in that, in described step (3), as described neodymium-doped A 3bGa 3si 2o 14serial crystal is Nd:Ca 3taGa 3si 2o 14time, the concrete corner cut scope of 1066nm frequency multiplication is (28 °≤θ≤48 °, 20 °≤φ≤40 °) and (51 °≤θ≤71 °, 0 °≤φ≤10 °), along this corner cut by Nd:Ca 3taGa 3si 2o 14crystal is processed into from frequency doubling device; As described neodymium-doped A 3bGa 3si 2o 14serial crystal is Nd:Sr 3nbGa 3si 2o 14time, the concrete corner cut scope of 1066nm frequency multiplication is (40 °≤θ≤60 °, 20 °≤φ≤40 °) and (52 °≤θ≤72 °, 0 °≤φ≤10 °), along this corner cut by Nd:Sr 3nbGa 3si 2o 14crystal is processed into from frequency doubling device; As described neodymium-doped A 3bG a3si 2o 14serial crystal is Nd:Sr 3t ag a3si 2o 14time, the concrete corner cut scope of 1066nm frequency multiplication is (22 °≤θ≤42 °, 20 °≤φ≤40 °) and (53 °≤θ≤73 °, 0 °≤φ≤10 °), along this corner cut by Nd:Sr 3taGa 3si 2o 14crystal is processed into from frequency doubling device; As described neodymium-doped A 3bGa 3si 2o 14serial crystal is Nd:Ca 3nbGa 3si 2o 14time, the concrete corner cut scope of 1066nm frequency multiplication is (30 °≤θ≤50 °, 20 °≤φ≤40 °) and (42 °≤θ≤62 °, 0 °≤φ≤10 °), along this corner cut by Nd:Ca 3nbGa 3si 2o 14crystal is processed into from frequency doubling device.
8. neodymium-doped A as claimed in claim 1 3bGa 3si 2o 14the application of serial crystal:
A kind of neodymium-doped A 3bGa 3si 2o 14serial crystal, from frequency doubling green light laser apparatus, comprises business architecture wavelength 808nm LD, neodymium-doped A described in described business architecture wavelength 808nm LD pumping 3bGa 3si 2o 14(A=Ca, Sr; B=Nb, Ta) serial self-frequency-doubling crystal's device, with the green laser obtaining.
9. neodymium-doped A as described in claim 7-8 any one 3bGa 3si 2o 14series self-frequency-doubling crystal device is at described neodymium-doped A 3bGa 3si 2o 14the application of serial crystal in frequency doubling green light laser apparatus:
By neodymium-doped A 3bGa 3si 2o 14series self-frequency-doubling crystal be placed in the water-cooled clamp of center grooved, described neodymium-doped A 3bGa 3si 2o 14series self-frequency-doubling crystal's the logical light face in front and back keeps logical light state, other face is surrounded and is convenient to heat radiation by silver foil, then the water-cooled clamp of described center grooved is placed in laserresonator, wherein resonator cavity incident mirror is coated with 808nm anti-reflection film, 532nm high-reflecting film, 1055～1070nm high-reflecting film, and resonator cavity outgoing mirror is coated with 808nm high-reflecting film, 1055～1070nm high-reflecting film and 532nm anti-reflection film; The laser of the 808nm launching with LD is by the direct end pumping neodymium-doped of described resonator cavity incident mirror A 3bGa 3si 2o 14series self-frequency-doubling crystal, it is 533nm from frequency doubling green light that resonator cavity outgoing mirror rear end produces wavelength.
10. neodymium-doped A as described in claim 7-8 any one 3bGa 3si 2o 14series self-frequency-doubling crystal device is at described neodymium-doped A 3bGa 3si 2o 14the application of serial crystal in frequency doubling green light laser apparatus:
At described neodymium-doped A 3bGa 3si 2o 14the pump light plane of incidence plating 808nm anti-reflection film of series self-frequency-doubling crystal device, 532nm high-reflecting film, 1055～1070nm high-reflecting film, exit facet plating 808nm high-reflecting film, 1055～1070nm high-reflecting film and 532nm anti-reflection film.
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