CN104014792A - Method for adopting spark plasma for sintering high-performance copper tungsten electrical contact materials - Google Patents
Method for adopting spark plasma for sintering high-performance copper tungsten electrical contact materials Download PDFInfo
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- CN104014792A CN104014792A CN201410278011.6A CN201410278011A CN104014792A CN 104014792 A CN104014792 A CN 104014792A CN 201410278011 A CN201410278011 A CN 201410278011A CN 104014792 A CN104014792 A CN 104014792A
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- sintering
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- copper
- tungsten
- copper tungsten
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- 238000005245 sintering Methods 0.000 title claims abstract description 49
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 title claims abstract description 42
- 239000000463 material Substances 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000002131 composite material Substances 0.000 claims abstract description 18
- 239000000843 powder Substances 0.000 claims abstract description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 17
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 14
- 239000010439 graphite Substances 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 239000011261 inert gas Substances 0.000 claims abstract description 5
- 238000009413 insulation Methods 0.000 claims description 6
- 238000010792 warming Methods 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000007731 hot pressing Methods 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 abstract description 2
- 238000002490 spark plasma sintering Methods 0.000 abstract 2
- 230000003213 activating effect Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 description 3
- 229910001080 W alloy Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000002679 ablation Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009770 conventional sintering Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000006855 networking Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000678 plasma activation Methods 0.000 description 1
- 238000001272 pressureless sintering Methods 0.000 description 1
- 230000035485 pulse pressure Effects 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
The invention discloses a method for adopting spark plasma for sintering high-performance copper tungsten electrical contact materials. According to the method, tungsten powder and copper powder are prepared into copper tungsten composite powder and placed into a graphite mould; the graphite mould is placed into a spark plasma sintering furnace, the pressure of 20 MPa to 60 MPa is applied on the copper tungsten composite powder, inert gas is introduced into the sintering furnace, or the sintering furnace is vacuumized, the sintering temperature ranges from 900 DEG C to 1200 DEG C, heat is preserved for 5 minutes to 25 minutes, finally the copper tungsten composite powder is cooled to the room temperature along with the furnace to manufacture the copper tungsten electrical contact materials. In comparison with a traditional sintering process, the spark plasma sintering method is the integrated sintering technology integrating hot pressing, plasma activating and resistance heating and has the advantages that the temperature rises fast, sintering time is short and crystal grains are uniform, the fine structure of a sintered body can be controlled easily, and therefore the obtained materials are high in compactness and good in performance.
Description
Technical field
The present invention relates to technical field of material, relate in particular to a kind of method of discharge plasma sintering high-performance copper tungsten alloy electric contact material.
Background technology
Along with China's transferring electricity from the west to the east, north and south supply mutually, the electrical network of trans-regional networking continues to build, China's high voltage power transmission and transforming network load increases day by day, power system capacity constantly increases, and adopts extra-high voltage, large capacity long distance power transmission to become the main trend of the energy-conservation transmission of electricity of China for this reason.For the critical piece electrical contact of power system, W-Cu is that contact material is widely used on various breakers, vacuum load switch and transformer change-over switch because it has the good excellent properties such as resistance to arc erosion, resistance fusion welding and high strength.But because tungsten and copper product are a kind of typical pseudo-alloies, both are immiscible, and both fusing points differ larger, therefore, adopt conventional sintering preparation method to be difficult to obtain higher density (relative density < 97%), this has a negative impact to the heat-conductivity conducting of material, arc resistant ablation property and mechanical property etc., and sintering time is all longer, energy consumption is large, and mostly adopts sintering aid.
Summary of the invention
The object of the present invention is to provide a kind of high-quality and efficient, low consumption method of discharge plasma sintering high-performance copper tungsten electric contact material cheaply.
For achieving the above object, the present invention is by the following technical solutions:
The method that adopts discharge plasma sintering high-performance copper tungsten electric contact material, described method specifically comprises the following steps:
1) tungsten powder, copper powder are mixed with to copper tungsten composite powder, put into graphite jig; In described copper tungsten composite powder, tungsten powder and copper powder content is in mass ratio respectively: tungsten powder 70-80%, and all the other are copper powder;
2) graphite jig is put into discharge plasma sintering stove, copper tungsten composite powder is applied to the pressure of 20-60MPa, in sintering furnace, pass into inert gas or vacuumize, sintering temperature is 900-1200 ℃, insulation 5-25min, finally cools to room temperature with the furnace, makes copper tungsten electric contact material.
The purity of described tungsten powder and copper powder is all greater than 99.5%.
Described step 2), in, sintering temperature is that the heating rate with 100-300 ℃/min is warming up to 900-1200 ℃.
Described step 2), in, while vacuumizing in sintering furnace, be evacuated to vacuum and be less than 10
-1pa.
The present invention adopts above technical scheme, compare with traditional sintering process, discharge plasma sintering method is to incorporate the sintering technology that hot pressing, plasma activation and resistance heated are integrated, thereby (sintering time can shorten to a few minutes to have that programming rate is fast, sintering time is short, and in preparing the conventional method of copper-tungsten electrical contact, as hot pressing and pressureless sintering method, sintering time needs several hours even tens hours) and the feature such as uniform crystal particles, be conducive to control the fine structure of sintered body, thereby the material density obtaining is high and performance good.Discharge plasma sintering method utilizes pulse energy, discharge pulse pressure and a joule thermogenetic TRANSIENT HIGH TEMPERATURE field to realize sintering process, and, low consumption high-quality and efficient for realizing cheaply material prepared significant.Secondly, the present invention in the process of preparing high-performance copper tungsten alloy electrical contact without compressing and without adding any sintering aid, thereby can greatly simplify preparation technology's flow process of material.
The specific embodiment
The method that adopts discharge plasma sintering high-performance copper tungsten electric contact material, described method specifically comprises the following steps:
1) tungsten powder, copper powder are mixed with to copper tungsten composite powder, put into graphite jig; In described copper tungsten composite powder, tungsten powder and copper powder content is in mass ratio respectively: tungsten powder 70-80%, and all the other are copper powder;
2) graphite jig is put into discharge plasma sintering stove, copper tungsten composite powder is applied to the pressure of 20-60MPa, in sintering furnace, pass into inert gas or vacuumize, sintering temperature is 900-1200 ℃, insulation 5-25min, finally cools to room temperature with the furnace, makes copper tungsten electric contact material.
The purity of described tungsten powder and copper powder is all greater than 99.5%.
Described step 2), in, sintering temperature is that the heating rate with 100-300 ℃/min is warming up to 900-1200 ℃.
Described step 2), in, while vacuumizing in sintering furnace, be evacuated to vacuum and be less than 10
-1pa.
Embodiment 1
The tungsten powder that is 70% than content by quality, 30% copper powder are mixed with copper tungsten composite powder, put into graphite jig.Graphite jig is put into discharge plasma sintering stove, copper tungsten composite powder is applied to the pressure of 60MPa, in sintering furnace, vacuumize, vacuum is lower than 10
-1under the condition of Pa, with the heating rate of 300 ℃/min, be warming up to 900 ℃, insulation 25min, finally cools to room temperature with the furnace, makes copper tungsten electric contact material.
The performance that embodiment 1 makes copper tungsten electric contact material is as follows:
Density: 99%;
Electrical conductivity: 4.7 μ Ω .cm;
Hardness (HB): 242.
Embodiment 2
The tungsten powder that is 80% than content by quality, 20% copper powder are mixed with copper tungsten composite powder, put into graphite jig.Graphite jig is put into discharge plasma sintering stove, copper tungsten composite powder is applied to the pressure of 20MPa, in sintering furnace, vacuumize, vacuum is lower than 10
-1under the condition of Pa, with the heating rate of 100 ℃/min, be warming up to 1200 ℃, insulation 5min, finally cools to room temperature with the furnace, makes copper tungsten electric contact material.
The performance that embodiment 2 makes copper tungsten electric contact material is as follows:
Density: 97%;
Electrical conductivity: 4.3 μ Ω .cm;
Hardness (HB): 262.
Embodiment 3
The tungsten powder that is 75% than content by quality, 25% copper powder are mixed with copper tungsten composite powder, put into graphite jig.Graphite jig is put into discharge plasma sintering stove, copper tungsten composite powder is applied to the pressure of 40MPa, in sintering furnace, pass into inert gas, heating rate with 200 ℃/min is warming up to 1100 ℃, insulation 15min, finally cools to room temperature with the furnace, makes copper tungsten electric contact material.
The performance that embodiment 3 makes copper tungsten electric contact material is as follows:
Density: 98.5%;
Electrical conductivity: 4.6 μ Ω .cm;
Hardness (HB): 256.
The density of copper-tungsten electric contact material is measured by Archimedes's method, and the electrical conductivity of material is measured by FQR7501A type eddy current device, and the hardness of material is measured by HB-3000B type Brinell hardness tester.
Claims (4)
1. the method that adopts discharge plasma sintering high-performance copper tungsten electric contact material, is characterized in that: described method specifically comprises the following steps:
1) tungsten powder, copper powder are mixed with to copper tungsten composite powder, put into graphite jig; In described copper tungsten composite powder, tungsten powder and copper powder content is in mass ratio respectively: tungsten powder 70-80%, and all the other are copper powder;
2) graphite jig is put into discharge plasma sintering stove, copper tungsten composite powder is applied to the pressure of 20-60MPa, in sintering furnace, pass into inert gas or vacuumize, sintering temperature is 900-1200 ℃, insulation 5-25min, finally cools to room temperature with the furnace, makes copper tungsten electric contact material.
2. the method for employing discharge plasma sintering high-performance copper tungsten electric contact material according to claim 1, is characterized in that: the purity of described tungsten powder and copper powder is all greater than 99.5%.
3. the method for employing discharge plasma sintering high-performance copper tungsten electric contact material according to claim 1, is characterized in that: described step 2), sintering temperature is that the heating rate with 100-300 ℃/min is warming up to 900-1200 ℃.
4. the method for employing discharge plasma sintering high-performance copper tungsten electric contact material according to claim 1, is characterized in that: described step 2), while vacuumizing in sintering furnace, be evacuated to vacuum and be less than 10
-1pa.
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105108156A (en) * | 2015-09-16 | 2015-12-02 | 哈尔滨工业大学 | Method for preparing TiAl/Ti alloy laminated composite board through powder metallurgy |
CN105256159A (en) * | 2015-10-22 | 2016-01-20 | 清华大学 | Tungsten and copper composite material and application thereof |
CN106011510A (en) * | 2016-08-05 | 2016-10-12 | 陕西斯瑞新材料股份有限公司 | Making method of copper-tungsten contact material |
CN106191511A (en) * | 2016-08-05 | 2016-12-07 | 陕西斯瑞新材料股份有限公司 | The manufacture method of copper-chromium contact material |
CN106180654A (en) * | 2016-08-05 | 2016-12-07 | 陕西斯瑞新材料股份有限公司 | Discharge plasma sintering prepares the method for infiltration copper-chromium contact material |
CN106180653A (en) * | 2016-08-05 | 2016-12-07 | 陕西斯瑞新材料股份有限公司 | Discharge plasma sintering prepares the method for copper tungsten contact material |
CN111805068A (en) * | 2020-07-30 | 2020-10-23 | 合肥工业大学 | Discharge plasma diffusion bonding method for porous ODS tungsten and copper |
CN112872356A (en) * | 2021-05-06 | 2021-06-01 | 陕西斯瑞新材料股份有限公司 | Method for improving strength of copper-tungsten and copper bonding surface |
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CN101698909A (en) * | 2009-10-30 | 2010-04-28 | 北京工业大学 | Method for preparing molybdenum-copper alloy |
CN101942591A (en) * | 2010-07-31 | 2011-01-12 | 湖南科技大学 | Method for fast preparing molybdenum-copper alloy |
CN102071360A (en) * | 2011-01-14 | 2011-05-25 | 华南理工大学 | Tungsten carbide particle-enhanced iron-based powder metallurgy material and preparation method thereof |
CN102433480A (en) * | 2011-12-01 | 2012-05-02 | 北京理工大学 | Tungsten-copper alloy with low skeleton connectivity and preparation method thereof |
CN102492884A (en) * | 2011-12-07 | 2012-06-13 | 北京理工大学 | Preparation method of novel tungsten-copper-zinc alloy material |
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KR20050081149A (en) * | 2004-02-11 | 2005-08-18 | 학교법인 포항공과대학교 | Fabrication method of bulk amorphous alloy and bulk amorphous composite by spark plasma sintering |
CN101698909A (en) * | 2009-10-30 | 2010-04-28 | 北京工业大学 | Method for preparing molybdenum-copper alloy |
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
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CN105108156A (en) * | 2015-09-16 | 2015-12-02 | 哈尔滨工业大学 | Method for preparing TiAl/Ti alloy laminated composite board through powder metallurgy |
CN105256159A (en) * | 2015-10-22 | 2016-01-20 | 清华大学 | Tungsten and copper composite material and application thereof |
CN106011510A (en) * | 2016-08-05 | 2016-10-12 | 陕西斯瑞新材料股份有限公司 | Making method of copper-tungsten contact material |
CN106191511A (en) * | 2016-08-05 | 2016-12-07 | 陕西斯瑞新材料股份有限公司 | The manufacture method of copper-chromium contact material |
CN106180654A (en) * | 2016-08-05 | 2016-12-07 | 陕西斯瑞新材料股份有限公司 | Discharge plasma sintering prepares the method for infiltration copper-chromium contact material |
CN106180653A (en) * | 2016-08-05 | 2016-12-07 | 陕西斯瑞新材料股份有限公司 | Discharge plasma sintering prepares the method for copper tungsten contact material |
CN106180653B (en) * | 2016-08-05 | 2018-01-12 | 陕西斯瑞新材料股份有限公司 | The method that discharge plasma sintering prepares copper tungsten contact material |
CN106180654B (en) * | 2016-08-05 | 2018-01-12 | 陕西斯瑞新材料股份有限公司 | The method that discharge plasma sintering prepares infiltration copper-chromium contact material |
CN111805068A (en) * | 2020-07-30 | 2020-10-23 | 合肥工业大学 | Discharge plasma diffusion bonding method for porous ODS tungsten and copper |
CN111805068B (en) * | 2020-07-30 | 2022-07-26 | 合肥工业大学 | Discharge plasma diffusion bonding method for porous ODS tungsten and copper |
CN112872356A (en) * | 2021-05-06 | 2021-06-01 | 陕西斯瑞新材料股份有限公司 | Method for improving strength of copper-tungsten and copper bonding surface |
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Effective date of registration: 20170112 Address after: 364000 Longyan City, Fujian province Xinluo District West Street No. 1 Fujian Road, Po Dragon Industrial Park Longzhou park business houses a hard alloy layer Patentee after: Fujian Guofu Tianhe Electrical Technology Co.,Ltd. Address before: Hangzhou City, Zhejiang province 311300 Ling''an City Jincheng Street Lin Shui Shan ranks 89 Building 2 unit 503 room Patentee before: Ruan Xiushi |
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