CN104009127A - Method for preparing chalcogenide thin-film solar cell in large-area mode - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 57
- 239000010409 thin film Substances 0.000 title claims abstract description 36
- 150000004770 chalcogenides Chemical class 0.000 title claims abstract description 23
- 239000010408 film Substances 0.000 claims abstract description 45
- 229910052751 metal Inorganic materials 0.000 claims abstract description 42
- 239000002184 metal Substances 0.000 claims abstract description 42
- 238000002360 preparation method Methods 0.000 claims abstract description 32
- 229910052798 chalcogen Inorganic materials 0.000 claims abstract description 28
- 150000001787 chalcogens Chemical class 0.000 claims abstract description 28
- 238000006243 chemical reaction Methods 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 230000008569 process Effects 0.000 claims abstract description 17
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 238000000576 coating method Methods 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 12
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 10
- 229910052725 zinc Inorganic materials 0.000 claims description 10
- 239000011701 zinc Substances 0.000 claims description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims description 9
- 239000011733 molybdenum Substances 0.000 claims description 9
- 239000002904 solvent Substances 0.000 claims description 9
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 8
- 238000002207 thermal evaporation Methods 0.000 claims description 8
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 7
- 239000012071 phase Substances 0.000 claims description 7
- 229910052711 selenium Inorganic materials 0.000 claims description 7
- 239000011669 selenium Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 239000007772 electrode material Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 239000004034 viscosity adjusting agent Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 238000007641 inkjet printing Methods 0.000 claims description 4
- 239000007791 liquid phase Substances 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 239000005864 Sulphur Substances 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 150000001298 alcohols Chemical class 0.000 claims description 3
- 150000001412 amines Chemical class 0.000 claims description 3
- 238000000224 chemical solution deposition Methods 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 150000002576 ketones Chemical class 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 239000003960 organic solvent Substances 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 229910052717 sulfur Inorganic materials 0.000 claims description 3
- 239000011593 sulfur Substances 0.000 claims description 3
- 238000010345 tape casting Methods 0.000 claims description 3
- 239000011135 tin Substances 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 2
- 230000008859 change Effects 0.000 claims description 2
- 239000002243 precursor Substances 0.000 claims description 2
- 238000003756 stirring Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 10
- 238000004528 spin coating Methods 0.000 claims 1
- 238000009718 spray deposition Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000000137 annealing Methods 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract description 2
- 238000009776 industrial production Methods 0.000 abstract 1
- 231100000252 nontoxic Toxicity 0.000 abstract 1
- 230000003000 nontoxic effect Effects 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 125000004354 sulfur functional group Chemical group 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 5
- 229910018038 Cu2ZnSnSe4 Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 239000001913 cellulose Substances 0.000 description 2
- 229920002678 cellulose Polymers 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000001172 regenerating effect Effects 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ZQRRBZZVXPVWRB-UHFFFAOYSA-N [S].[Se] Chemical compound [S].[Se] ZQRRBZZVXPVWRB-UHFFFAOYSA-N 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 description 1
- 229910000058 selane Inorganic materials 0.000 description 1
- 238000005987 sulfurization reaction Methods 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a method for preparing a chalcogenide thin-film solar cell in a large-area mode. The problem that an existing thin-film cell is poor in evenness during large-area production is solved. The preparation process comprises the following steps that a vacuum magnetron sputtering method in the prior art is used for sputtering a bottom electrode thin film on a rigid or flexible substrate, a metal or sulfur group metal reaction layer is deposited on a bottom electrode, afterwards, in a normal temperature environment, a prepared high-purity chalcogen solution is used for depositing a chalcogen layer on the metal reaction layer through a conventional process, a solidified chalcogen thin film is formed through low temperature baking, and then the reaction layer is completely converted into a polycrystalline chalcogenide semiconductor film through high temperature annealing treatment; at last, a buffer layer, a window layer and an upper electrode are plated, so that the chalcogenide thin-film solar cell is manufactured. The method for preparing the chalcogenide semiconductor film cell is nontoxic, low in cost, easy to control, efficient and suitable for industrial production.
Description
Technical field
The invention belongs to technical field of solar batteries, relate in particular to a kind of method that large area is prepared chalkogenide thin-film solar cells.
Background technology
For solving fossil energy shortage and environmental pollution two large problems, various countries two drop into during the decade ample resources and research and develop clean regenerative resource at this.Along with power consumption increase and nuclear energy enjoy safely query, it is more and more important and urgent that the demand of regenerative resource just seems.Comprehensive numerous renewable energy resources, solar cell is to be considered to the most potential technology, all because it has abundant source, widely distributed and be not subject to the distinct advantages such as regional limits.And in the industry of solar cell, realizing at present volume production is mainly silicon series solar cell, but the production technology of this silicon machine battery device all needs to use expensive equipment and supporting, and cost is very high, so that the cost of current solar power generation is still far away higher than fossil energy cost of electricity-generating.
Therefore, development chalkogenide thin-film solar cells just becomes the new direction of industry.Chalkogenide hull cell with efficient, high stability, tool a little less than the advantage such as optical activity and radiation resistance and being favored, the Copper Indium Gallium Selenide (CIGS) of wherein take is representative, conversion efficiency reaches on 20%, makes an appointment with traditional crystal silicon battery.But chalkogenide hull cell high industrial not yet so far, major obstacle is the complicated process of preparation of the multi-element film of its light absorbing zone, causes battery rate of finished products low, makes total cost higher.
The method of preparing at present chalkogenide light-absorption layer can be divided into two large classes: the first kind is the relevant physical method of vacuum, as thermal evaporation, magnetron sputtering and molecular beam epitaxy etc.Adopt the prepared small size sulfur-selenium thin film quality of these class methods better, the photoelectric conversion efficiency of battery is high, but is difficult to guarantee the uniformity of film while preparing large area film, thereby affects the photoelectric conversion efficiency of battery, cause rate of finished products low, large-scale production is difficult to carry out.Equations of The Second Kind is non-vacuum liquid phase method, as sprayed deposit, inkjet printing, die slot coating and electrochemical deposition etc.This class methods advantage is that stock utilization is high, can reduce production costs significantly, and can prepare easily large area film, but most existing adopting non-vacuum process, it is on the low side that its photoelectric conversion efficiency still belongs to, and the many kinds of parameters such as stoichiometry of liquid phase while producing all need strict control, cause repeatability to be difficult to be guaranteed.
Summary of the invention
The problem of uniformity inequality when the present invention produces for solving existing chalkogenide thin-film solar cells large area, provide a kind of without poison gas, with low cost, equipment is simple, reactant consumption is little, preparation process environmental friendliness, easily control, the electricity conversion that is prepared into battery is high, and is suitable for the preparation method of a kind of chalcogenide semiconductor film of suitability for industrialized production.
The present invention for the technical scheme that solves the Bian of technical problem institute that exists in known technology and use is: chalkogenide thin-film solar cells is multi-layer film structure, comprises substrate, hearth electrode, absorbed layer, resilient coating, Window layer and top electrode.
Chalkogenide absorbing layer of thin film solar cell preparation method, its preparation technology's flow process comprises following step:
(1) preparation of chalcogen solution;
Solute is: high-purity sulfur family element powders (purity >99.99%), chalcogen can be but be not limited to sulphur and selenium.
Solvent is: the organic solvents such as ketone, alcohols, amine, also can mix use
The mass ratio of viscosity modifier and solvent is 1:5～30;
Said viscosity modifier is: cellulose or ethyl cellulose
High-purity sulfur family element powders is dissolved in to solvent by the concentration of 0.01～5M, also can adopts and mix chalcogen or mixed solvent, and add viscosity modifier, room temperature fully stirs >12 hour, forms stable precursor solution.By adding or reduce the consumption of solvent, chalcogen concentration in solution is controlled to 0.01～5M.
(2) preparation of substrate and hearth electrode;
Substrate can be glass, rigidity and flexible metal material or polymeric membrane
Hearth electrode material can be molybdenum, titanium and transparent conductive oxide etc.
Adopt conventional high vacuum gas-phase process, as thermal evaporation, magnetron sputtering and molecular beam epitaxy etc., prepare hearth electrode film on substrate, film thickness is determined by requirement on devices.
(3) preparation of metal or chalcogenide metal reaction substrate
Metal can be but be not limited to copper, zinc, tin, indium, gallium.
Adopt conventional high vacuum gas-phase process, as plated metal or the chalcogenide metal reaction layer on hearth electrode film such as thermal evaporation, magnetron sputtering and molecular beam epitaxy.Reaction layer thickness is 0.6-2um.
(4) preparation of chalcogen film
In the environment of normal temperature, the film-forming process of high-purity chalcogen soln using routine of preparation, as sprayed deposit, inkjet printing, die slot coating or knife coating deposit chalcogen layer on metal reaction layer, after with low-temperature bake, form curing chalcogen film, film thickness is determined by requirement on devices.
(5) the high temperature anneal
The substrate that deposits hearth electrode, metal or chalcogenide metal and chalcogen film is placed in to the high temperature furnace of sectional temperature programmed control, vacuum seal, then fast heat up uniformly,, make substrate region temperature be controlled at 200-1000 ℃, thickness according to prefabricated conversion zone, carry out the processing of 5-60min, make conversion zone change the chalcogenide semiconductor film of polycrystalline completely into.
(6) preparation of resilient coating;
Resilient coating can chalcogenide metal, metal can be but be not limited to cadmium and zinc.
Adopt chemical bath deposition method preparation to prepare resilient coating on chalkogenide thin film semiconductor film, film thickness is determined by requirement on devices.
(7) preparation of Window layer and top electrode;
Window layer can chalcogen metal, metal can be but be not limited to zinc.
Upper electrode material can be molybdenum, titanium and transparent conductive oxide etc.
Adopt conventional high vacuum gas-phase process, as thermal evaporation, magnetron sputtering and molecular beam epitaxy etc., prepare Window layer and upper electrode film on substrate, film thickness is determined by requirement on devices.
Beneficial effect of the present invention is embodied in:
(1) chalcogen solution preparation and film preparation process are all to carry out in normal temperature environment, and equipment is simple, and quality control is simple and easy, with low cost;
(2) adopted antivacuum liquid phase method technique, relatively existing selenium sulfuration process, raw material availability is high, and prepared thin film composition good uniformity, and surface smoothness is high, is conducive to prepare the chalkogenide film of large-area high-quality.
(3) adopted cured film technique, the hypertoxic H2Se gaseous source of relatively existing employing selenizing technique, preparation process environmental friendliness, is conducive to environmental requirement.
Accompanying drawing explanation
Fig. 1 is the substrate structure schematic diagram of hearth electrode provided by the invention, metal or chalcogenide metal and chalcogen film.
Fig. 2 is the current-voltage characteristic curve of Cu2ZnSnSe4 solar cell device.
Embodiment
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is described in further detail:
(1) adopt high-purity selenium powder, choosing ethylenediamine is solvent, and is that 1:10 adds cellulose by the mass ratio of viscosity modifier and solvent, and magnetic agitation 12 hours, forms stable solution.In solution, the concentration of Se atom is controlled at 2M.
(2) utilize method depositing electrode molybdenum in glass substrate of sputter, molybdenum thickness is 0.5um.
(3) utilize the method for sputter in molybdenum electrode, to plate in order zinc/tin/copper metal film, film thickness is respectively 200/200/350nm.
(4) adopt die slot rubbing method to coat the high-purity selenium solution of preparation at zinc/tin/copper metal reaction substrate, then at 150 ℃, toast 10 minutes.Fig. 1 is the substrate structure schematic diagram of hearth electrode provided by the invention, metal or chalcogenide metal and chalcogen film.Comprise-(1) conductive substrates of this substrate, (2) metal or chalcogenide metal, (3) chalcogen film.
(5) substrate that deposits molybdenum/zinc/tin/copper/selenium film is placed in to the high temperature furnace of sectional temperature programmed control, vacuum seal, at 500 ℃, annealing in process selenizing obtains Cu2ZnSnSe4 compound semiconductor film for 30 minutes.
(6) utilize chemical bath deposition method to prepare cadmium sulfide resilient coating, film thickness is 50nm.
(7) method of sputter deposits respectively ZnO Window layer and tin indium oxide upper electrode film thickness is respectively 50nm and 1200nm on cadmium sulfide.
The open circuit voltage of the Cu2ZnSnSe4 solar cell of preparation is 499mv on this basis, and short-circuit current density is 16.92mA/cm2, and fill factor, curve factor is 62%, and electricity conversion is 5.34%.Fig. 2 is the current-voltage characteristic curve of Cu2ZnSnSe4 solar cell device.
The above-described example of specifically executing; object of the present invention, technical scheme and positive effect are further described; institute is understood that; the foregoing is only the example of specifically executing of the present invention; be not limited to the present invention; all do within principle of the present invention any repair and improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. a large area is prepared the method for chalkogenide thin-film solar cells, it is characterized in that step is as follows: the preparation solute of § A chalcogen solution is: high-purity sulfur family element powders (purity >99.99%), chalcogen can be but be not limited to sulphur and selenium; Solvent is: the organic solvents such as ketone, alcohols, amine, also can mix use, and add viscosity modifier; Room temperature fully stirs >12 hour, forms stable precursor solution.By adding or reduce the consumption of solvent, chalcogen concentration in solution is controlled to 0.01～5M; § B prepares hearth electrode on substrate, and substrate can be glass, rigidity and flexible metal material or polymeric membrane; Hearth electrode material can be molybdenum, titanium and transparent conductive oxide etc.; Adopt conventional high vacuum gas-phase process, as thermal evaporation, magnetron sputtering and molecular beam epitaxy etc. are prepared hearth electrode film on substrate; § C is metal processed or chalcogenide metal reaction film on hearth electrode; Metal can be but be not limited to copper, zinc, tin, indium, gallium; Adopt conventional high vacuum gas-phase process, as plated metal or the chalcogenide metal reaction layer on hearth electrode film such as thermal evaporation, magnetron sputtering and molecular beam epitaxy.Reaction layer thickness is 0.6-2um.§ D prepares chalcogen film at metal reaction layer; In the environment of normal temperature, the film-forming process of high-purity chalcogen soln using routine of preparation, as sprayed deposit, inkjet printing, die slot coating or knife coating deposit chalcogen layer on metal reaction layer, after with low-temperature bake, form curing chalcogen film.§ E is placed in the substrate that deposits hearth electrode, metal or chalcogenide metal and chalcogen film the high temperature furnace of sectional temperature programmed control, vacuum seal, then fast heat up uniformly,, make substrate region temperature be controlled at 200-1000 ℃, thickness according to prefabricated conversion zone, carry out the processing of 5-60min, make conversion zone change the chalcogenide semiconductor film of polycrystalline completely into.§ E is at chalcogenide semiconductor film preparation resilient coating; Resilient coating can chalcogenide metal, metal can be but be not limited to cadmium and zinc; Adopt chemical bath deposition method preparation to prepare resilient coating on chalkogenide thin film semiconductor film.§ F prepares Window layer and top electrode on resilient coating; Window layer can chalcogen metal, metal can be but be not limited to zinc; Upper electrode material can be molybdenum, titanium and transparent conductive oxide etc.; Adopt conventional high vacuum gas-phase process, as thermal evaporation, magnetron sputtering and molecular beam epitaxy etc. are prepared Window layer and upper electrode film on substrate.
2. according to a kind of area of claim 1, prepare the preparation method of the method CIGS thin-film material of chalkogenide thin-film solar cells, it is characterized in that: said chalcogen can be but be not limited to sulphur and selenium.
3. according to a kind of area of claim 1, prepare the preparation method of the method CIGS thin-film material of chalkogenide thin-film solar cells, it is characterized in that: said solvent can be the organic solvents such as ketone, alcohols, amine, also can mix use.
4. according to a kind of area of claim 1, prepare the preparation method of the method CIGS thin-film material of chalkogenide thin-film solar cells, it is characterized in that: said substrate can be glass, rigidity and flexible metal material or polymeric membrane.
5. according to a kind of area of claim 1, prepare the preparation method of the method CIGS thin-film material of chalkogenide thin-film solar cells, it is characterized in that: said hearth electrode material can be molybdenum, titanium and transparent conductive oxide etc.
6. according to a kind of area of claim 1, prepare the preparation method of the method CIGS thin-film material of chalkogenide thin-film solar cells, it is characterized in that: said reactive group sheet material can be metal or chalcogenide metal; Metal can be but be not limited to copper, zinc, tin, indium, gallium.
7. according to a kind of area of claim 1, prepare the preparation method of the method CIGS thin-film material of chalkogenide thin-film solar cells, it is characterized in that: the high vacuum gas-phase process that step § B, § C and § F prepare hearth electrode, metal or chalcogenide metallic film, Window layer and top electrode is thermal evaporation, magnetron sputtering and molecular beam epitaxy.
8. according to a kind of area of claim 1, prepare the preparation method of the method CIGS thin-film material of chalkogenide thin-film solar cells, it is characterized in that: step § C is spin-coating method, the tape casting, spray deposition, czochralski method, silk screen print method, ink-jet printing process with the antivacuum liquid phase process that § D prepares metal or chalcogenide metal reaction film and chalcogen film, instils into embrane method, roll coating process, die slot rubbing method, puts down excellent rubbing method, capillary rubbing method, comma rubbing method or intaglio plate rubbing method.
9. according to a kind of area of claim 1, prepare the preparation method of the method CIGS thin-film material of chalkogenide thin-film solar cells, it is characterized in that: the high temperature anneal temperature described in step § E is 200-1000 ℃.
10. according to a kind of area of claim 1, prepare the preparation method of the method CIGS thin-film material of chalkogenide thin-film solar cells, it is characterized in that: the thickness of said target polycrystalline area semiconductive thin film is 0.5～3um.
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| CN103474505A (en) * | 2012-06-06 | 2013-12-25 | 尚越光电科技有限公司 | Alkali metal doping method in large-scale production of CIGS (copper, indium, gallium, selenium) thin-film solar cell |
| CN103710674A (en) * | 2013-11-26 | 2014-04-09 | 山东希格斯新能源有限责任公司 | Technology for preparing CIGS thin-film solar cell |
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Patent Citations (4)
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| CN101958369A (en) * | 2010-07-27 | 2011-01-26 | 上海太阳能电池研究与发展中心 | Method for preparing copper-indium-gallium-selenium film material |
| CN101944556A (en) * | 2010-09-17 | 2011-01-12 | 浙江尚越光电科技有限公司 | Preparation method of high-uniformity copper-indium-gallium-selenium (CIGS) absorbed layer |
| CN103474505A (en) * | 2012-06-06 | 2013-12-25 | 尚越光电科技有限公司 | Alkali metal doping method in large-scale production of CIGS (copper, indium, gallium, selenium) thin-film solar cell |
| CN103710674A (en) * | 2013-11-26 | 2014-04-09 | 山东希格斯新能源有限责任公司 | Technology for preparing CIGS thin-film solar cell |
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