CN104008899A - High-energy and wide-temperature tantalum capacitor preparing method - Google Patents
High-energy and wide-temperature tantalum capacitor preparing method Download PDFInfo
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- CN104008899A CN104008899A CN201410197768.2A CN201410197768A CN104008899A CN 104008899 A CN104008899 A CN 104008899A CN 201410197768 A CN201410197768 A CN 201410197768A CN 104008899 A CN104008899 A CN 104008899A
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Abstract
The invention discloses a high-energy and wide-temperature tantalum capacitor preparing method. The high-energy and wide-temperature tantalum capacitor preparing method comprises the first step of tantalum block pressed density D adjusting, the second step of classifying forming, the third step of wide-temperature working electrolyte preparing, the fourth step of low-temperature storing and the fifth step of high-temperature aging. The high-energy and wide-temperature tantalum capacitor preparing method has the advantages that classifying forming is adopted, and a composite oxide film with Ta2O5 medium compactness distributed in a graded mode is formed on the surface of a positive matrix; compared with common working electrolyte, the wide-temperature working electrolyte is smaller in specific resistance, higher in boiling point, lower in solidifying point and higher in oxidation efficiency, and can repair a medium layer damaged by various stresses under the high temperature in time, and the performance of a capacitor is prevented from deterioration; the application temperature zone of the high-middle-voltage and high-energy tantalum capacitor is widened, the tantalum capacitor can stably work for a long time in the wide temperature range from -55 DEG C to 200 DEG C, and the service life of the capacitor is prolonged.
Description
Technical field
The present invention relates to the wide temperature tantalum capacitor of a kind of high energy preparation method, relate in particular to a kind of preparation method of the mesohigh high-energy-density tantalum capacitor that can normally work in-55 DEG C～200 DEG C wide temperature ranges, belong to electrolytic capacitor preparing technical field.
Background technology
Electrolytic capacitor, as common electronic component, is widely used in the many-sides such as communication, space flight and military project, submarine cable and advanced electronics, plays in the line the effects such as energy storage, filtering, bypass, coupling, power supply.The tantalum capacitor that adopts conventional fabrication processes to produce can steady operation below 125 DEG C.But for being applied to the electronic equipment of deep drilling well, geological prospecting and seabed communication, due to minimizing day by day and the technological progress of subsurface boring natural resources deposit, the drilling depth of industry starts to deepen, also start to drill in the area of geothermal gradient higher (global geothermal gradient is generally the 25 DEG C/km degree of depth) simultaneously, these severe missile silo temperature exceed 200 DEG C, and pressure exceedes 25kpsi; Except oil and natural gas industry, for simplifying logger signal chains, other application such as aviation electronics, automobile industry also day by day increase the demand of the wide temperature high energy of mesohigh tantalum capacitor.
Existing tantalum capacitor causes thermorunaway to be lost efficacy because ambient temperature is too high, thereby causes electronic equipment, the distortion of instrument and meter output waveform, circuit normally to work.And equipment fault meeting causes high shutdown cost; at the drill string of underground several miles of operations if there is electronic building brick fault; need one day above time inspect and change, the deep water offshore drilling platform of complicated operation on average needs to spend 1,000,000 dollars every day.Therefore it is one imperative for the electronic devices and components under the adverse circumstances such as high temperature and the overall situation temperature difference to develop.
Summary of the invention
The object of the invention is to for the existing deficiency of prior art, the wide temperature tantalum capacitor of a kind of high energy preparation method is provided, thereby improve the useful life of capacitor, filled up the blank of the wide temperature tantalum capacitor of mesohigh high-energy-density technology of preparing in-55 DEG C～200 DEG C wide temperature ranges.
The present invention is achieved by following technical solution.
The wide temperature tantalum capacitor of a kind of high energy preparation method, it comprises following steps:
(1), regulate tantalum piece pressed density D:
Due to the tantalum powder of high-energy-density tantalum capacitor employing Fabrication of High Specific Capacitance specification, particle diameter is less, grain type is more complicated, for ensureing anode block porosity and wettability, can suitably reduce pressed density; Concrete downward scope is:
0.7D
0≤ D
1≤ 0.9D
0, D
0for nominal pressed density.
(2), classification forms; Object is to form Ta in tantalum core surface
2o
5the composite oxide film of medium compactness distribution gradient; Concrete steps are as follows:
A, low pressure stage: when voltage is less than 0.7 times of formation voltage, adopt the HNO that volumn concentration is 0.1%
3solution, room temperature is boosted; Now Wettability Between Oxide Scale is better, easily obtains the high dielectric layer of compactness.
B, intensification section: voltage reaches 0.7 times and forms after voltage, improves formation temperature to 90 ± 2 DEG C, and constant voltage 1h～2h; Can strengthen the mobile property of ethylene glycol, reduce residual current in oxide-film, be conducive to again accelerate internal heat dissipating, prevent crystallization.
C, high pressure section: 0.7～1 times forms voltage, tantalum fuse is transferred to H
3pO
4in the aqueous solution, continue to form, temperature is adjusted into 85 ± 3 DEG C; This is to consider that phosphonium ion radius is larger, has positive protective effect in the tantalum oxide growth later stage.
D, heat treatment: effect is to destroy because occurring in forming process that the defects such as fault affect the oxide-film that forms quality; Heat treatment temperature is 300 DEG C～400 DEG C, and heat treatment time is 20min～60min;
E, high temperature compensation form: the anode tantalum piece immersion temperature of soaking through persulfuric acid is 160 DEG C～180 DEG C, carries out electrochemical treatments 1h～2h in the electrolyte that mixed by phosphoric acid and ethylene glycol, apply voltage and be 1.1～1.4 times of capacitor rated voltage;
(3), prepare wide temperature Working electrolyte;
Concrete formula is: mass percent is 42%, and H2SO4 solution+property-modifying additive+hydrogen agent disappears;
Wherein property-modifying additive is the one in ethylene glycol, EGME, sweet mellow wine, succinic acid, or formulated by two kinds of volume ratios of pressing 1:1～1:1.5 in ethylene glycol, EGME, sweet mellow wine, succinic acid; The hydrogen agent that disappears is the one in paranitrobenzoic acid ammonium, p-nitrophenol, p-nitrophenyl methyl alcohol, or formulated by two kinds of volume ratios of pressing 1:1～1:1.5 in paranitrobenzoic acid ammonium, p-nitrophenol, p-nitrophenyl methyl alcohol;
(4), low tempertaure storage: store 2h～5h under-68 ± 2 DEG C of conditions;
(5), high temperature aging.
In described electrolyte, the concentration of volume percent of phosphoric acid is 1%～15%, the concentration of volume percent of ethylene glycol solution is 50%～70%, and all the other are water.
High temperature aging in described step (5) comprises following method step:
(1), the tantalum capacitor after encapsulation is at room temperature used to 2V～5V constant voltage;
(2), the stage I of exerting pressure heats up: the two ends of the tantalum capacitor after encapsulation are applied to direct voltage at the temperature of 80 DEG C～90 DEG C, the 12h～24h that powers on, the voltage applying is 1U
r, wherein, U
rfor tantalum capacitor rated voltage;
(3), the stage II of exerting pressure heats up: the two ends of tantalum capacitor are applied to direct voltage at the temperature of 120 DEG C～130 DEG C, the 1h～3h that powers on, the voltage applying is 0.62～0.65U
r;
(4), the stage III of exerting pressure heats up: the two ends of tantalum capacitor are applied to direct voltage at the temperature of 190 DEG C～205 DEG C, the 1.5h～3h that powers on, the voltage applying is 0.55～0.6U
r;
(5), the stage IV of exerting pressure heats up: the two ends of tantalum capacitor are applied to direct voltage at the temperature of 225 DEG C～230 DEG C, the 1.5h～2h that powers on, the voltage applying is 0.45～0.52U
r;
(6), naturally cooling: tantalum capacitor is at room temperature recovered to 5h～12h;
(7), rise again and exert pressure: the two ends of cooled tantalum capacitor are applied to direct voltage at the temperature of 80 DEG C～90 DEG C, the 12h～24h that powers on, the voltage applying is 1U
r.
The invention has the beneficial effects as follows:
Compared with prior art, the present invention adopts classification to form, and forms Ta on anode substrate surface
2o
5the composite oxide film of medium compactness distribution gradient; The wide temperature Working electrolyte of preparation, less than routine work electrolytic condenser resistance, little-70 DEG C～+ 200 DEG C warm area internal ratio resistance variations; The boiling point of Working electrolyte is higher, and solidifying point is lower; Oxidation efficiency is higher, and the dielectric layer that can damage being subject to various stress under high temperature is repaired in time, prevents that capacitor performance from worsening; Widen the application warm area of mesohigh high energy tantalum capacitor, ensure that tantalum capacitor can work long-term and stably in-55 DEG C～200 DEG C wide temperature ranges, improved the useful life of capacitor, the high conformity of unit for electrical property parameters, can meet the instructions for use under wide temperature condition.
Embodiment
Further describe technical scheme of the present invention below in conjunction with embodiment, but described in claimed scope is not limited to.
Embodiment 1
The wide temperature tantalum capacitor of a kind of high energy preparation method, taking CA38H type 75V1000 μ F as example, it comprises following steps:
(1), regulate tantalum piece pressed density D;
Concrete downward scope is: D
1=0.85D
0, D
0for nominal pressed density;
(2), classification forms; Concrete steps are as follows:
A, low pressure stage: when voltage is less than 0.7 times of formation voltage, adopt the HNO that volumn concentration is 0.1%
3solution, room temperature is boosted;
B, intensification section: voltage reaches 0.7 times and forms after voltage, improves formation temperature to 88 DEG C, and constant voltage 1.5h;
C, high pressure section: 0.7～1 times forms voltage, tantalum fuse is transferred to H
3pO
4in the aqueous solution, continue to form, temperature is adjusted into 86 DEG C;
D, heat treatment: heat treatment temperature is 340 DEG C, heat treatment time is 25min;
E, high temperature compensation form: concrete grammar is as follows: in the electrolyte that anode tantalum piece is immersed to temperature is 160 DEG C, mixed by phosphoric acid and ethylene glycol, carry out electrochemical treatments 2 hours, apply voltage and be 1.1 times of capacitor rated voltage; In described electrolyte, the concentration of volume percent of phosphoric acid is 15%, the concentration of volume percent of ethylene glycol solution is 50%, and all the other are water;
(3), prepare wide temperature Working electrolyte;
Concrete formula: mass percent is 42%, and H2SO4 solution+property-modifying additive+hydrogen agent disappears; Concrete operation method is: to the property-modifying additive that adds 1/7 times of weight deionized water in described sulfuric acid solution, be mixed with mixed solution; Described property-modifying additive is the one in ethylene glycol, EGME, sweet mellow wine, succinic acid; To the hydrogen agent that disappears that adds 1/15 times of weight deionized water in above-mentioned mixed solution, make electrolyte; The described hydrogen agent that disappears is the one in paranitrobenzoic acid ammonium, p-nitrophenol, p-nitrophenyl methyl alcohol;
(4), low tempertaure storage; Under-68 DEG C of conditions, store 3h;
(5), high temperature aging; Its concrete grammar step is:
A, by encapsulation after tantalum capacitor at room temperature use 5V constant voltage 1.5h;
B, the stage I of exerting pressure heats up: the two ends of the tantalum capacitor after encapsulation are applied to direct voltage at the temperature of 85 DEG C, and the 12h that powers on, the voltage applying is U
r, wherein, U
rfor tantalum capacitor rated voltage 75V;
C, the stage II of exerting pressure heats up: the two ends of tantalum capacitor are applied to direct voltage at the temperature of 125 DEG C, and the 1.5h that powers on, the voltage applying is 0.63UR;
D, the stage III of exerting pressure heats up: the two ends of tantalum capacitor are applied to direct voltage at the temperature of 200 DEG C, and the 2h that powers on, the voltage applying is 0.58U
r;
E, the stage IV of exerting pressure heats up: the two ends of tantalum capacitor are applied to direct voltage at the temperature of 230 DEG C, and the 2h that powers on, the voltage applying is 0.52U
r;
F, naturally cooling: tantalum capacitor is at room temperature recovered to 6h;
G, rise again and exert pressure: the two ends of cooled tantalum capacitor are applied to direct voltage at the temperature of 85 DEG C, the 12h that powers on, the voltage applying is U
r.
Embodiment 2
The wide temperature tantalum capacitor of a kind of high energy preparation method, taking CA38H type 100V400 μ F as example, it comprises following steps:
(1), regulate tantalum piece pressed density D;
Concrete downward scope is: D
1=0.78D
0, D
0for nominal pressed density.
(2), classification forms; Concrete steps are as follows:
A, low pressure stage: when voltage is less than 0.7 times of formation voltage, adopt the HNO that volumn concentration is 0.1%
3solution, room temperature is boosted;
B, intensification section: voltage reaches 0.7 times and forms after voltage, improves formation temperature to 91 DEG C, and constant voltage 2h;
C, high pressure section: 0.7～1 times forms voltage, tantalum fuse is transferred to H
3pO
4in the aqueous solution, continue to form, temperature is adjusted into 88 DEG C;
D, heat treatment: heat treatment temperature is 365 DEG C, heat treatment time is 35min;
E, high temperature compensation form: concrete grammar is as follows: in the electrolyte that anode tantalum piece is immersed to temperature is 170 DEG C, mixed by phosphoric acid and ethylene glycol, carry out electrochemical treatments 1.5 hours, apply voltage and be 1.4 times of capacitor rated voltage; In described electrolyte, the concentration of volume percent of phosphoric acid is 12%, the concentration of volume percent of ethylene glycol solution is 70%, and all the other are water;
(3), prepare wide temperature Working electrolyte;
Concrete formula: mass percent is 42%, and H2SO4 solution+property-modifying additive+hydrogen agent disappears; Its concrete operation method is:
To the property-modifying additive that adds 1/10 times of weight deionized water in described sulfuric acid solution, be mixed with mixed solution; Described property-modifying additive is the one in ethylene glycol, EGME, sweet mellow wine, succinic acid; To the hydrogen agent that disappears that adds 1/9 times of weight deionized water in above-mentioned mixed solution, make electrolyte; The described hydrogen agent that disappears is the one in paranitrobenzoic acid ammonium, p-nitrophenol, p-nitrophenyl methyl alcohol;
(4), low tempertaure storage; Under-68 DEG C of conditions, store 4h;
(5), high temperature aging; Concrete grammar step is:
A, by encapsulation after tantalum capacitor at room temperature use 4V constant voltage 1.5h;
B, the stage I of exerting pressure heats up: the two ends of the tantalum capacitor after encapsulation are applied to direct voltage at the temperature of 80 DEG C, and the 24h that powers on, the voltage applying is 1U
r, wherein, U
rfor tantalum capacitor rated voltage;
C, the stage II of exerting pressure heats up: the two ends of tantalum capacitor are applied to direct voltage at the temperature of 120 DEG C, and the 3h that powers on, the voltage applying is 0.65U
r;
D, the stage III of exerting pressure heats up: the two ends of tantalum capacitor are applied to direct voltage at the temperature of 190 DEG C, and the 1.5h that powers on, the voltage applying is 0.55U
r;
E, the stage IV of exerting pressure heats up: the two ends of tantalum capacitor are applied to direct voltage at the temperature of 225 DEG C, and the 2h that powers on, the voltage applying is 0.45U
r;
F, naturally cooling: tantalum capacitor is at room temperature recovered to 5h;
G, rise again and exert pressure: the two ends of cooled tantalum capacitor are applied to direct voltage at the temperature of 80 DEG C, the 24h that powers on, the voltage applying is 1U
r.
Embodiment 3
The wide temperature tantalum capacitor of a kind of high energy preparation method, with CA38H type 125V220
μf is example, and it comprises following steps:
(1), regulate tantalum piece pressed density D;
Concrete downward scope is: D
1=0.83D
0, D
0for nominal pressed density;
(2), classification forms; Concrete steps are as follows:
A, low pressure stage: when voltage is less than 0.7 times of formation voltage, adopt the HNO3 solution that volumn concentration is 0.1%, room temperature is boosted;
B, intensification section: voltage reaches 0.7 times and forms after voltage, improves formation temperature to 90 DEG C, and constant voltage 1h;
C, high pressure section: 0.7～1 times forms voltage, tantalum fuse is transferred to H
3pO
4in the aqueous solution, continue to form, temperature is adjusted into 87 DEG C;
D, heat treatment: heat treatment temperature is 375 DEG C, heat treatment time is 45min;
E, high temperature compensation form, and concrete grammar is as follows: in the electrolyte that anode tantalum piece is immersed to temperature is 170 DEG C, mixed by phosphoric acid and ethylene glycol, carry out electrochemical treatments 1.8 hours, apply voltage and be 1.2 times of capacitor rated voltage; In described electrolyte, the concentration of volume percent of phosphoric acid is 13%, the concentration of volume percent of ethylene glycol solution is 58%, and all the other are water.
(3), prepare wide temperature Working electrolyte;
Concrete formula: mass percent is 42%, and H2SO4 solution+property-modifying additive+hydrogen agent disappears; Its concrete operation method is:
To the property-modifying additive that adds 1/9 times of weight deionized water in described sulfuric acid solution, be mixed with mixed solution; Described property-modifying additive is the one in ethylene glycol, EGME, sweet mellow wine, succinic acid; To the hydrogen agent that disappears that adds 1/10 times of weight deionized water in above-mentioned mixed solution, make electrolyte; The described hydrogen agent that disappears is that in paranitrobenzoic acid ammonium, p-nitrophenol, p-nitrophenyl methyl alcohol the two kinds volume ratio by 1:1.5 is formulated;
(4), low tempertaure storage; Under-72 DEG C of conditions, store 5h.
(5), high temperature aging; Concrete grammar step is as follows:
A, by encapsulation after tantalum capacitor at room temperature use 2V constant voltage 1.5h;
B, the stage I of exerting pressure heats up: the two ends of the tantalum capacitor after encapsulation are applied to direct voltage at the temperature of 85 DEG C, and the 12h that powers on, the voltage applying is 1U
r, wherein, U
rfor tantalum capacitor rated voltage;
C, the stage II of exerting pressure heats up: the two ends of tantalum capacitor are applied to direct voltage at the temperature of 125 DEG C, and the 2h that powers on, the voltage applying is 0.64U
r;
D, the stage III of exerting pressure heats up: the two ends of tantalum capacitor are applied to direct voltage at the temperature of 200 DEG C, and the 2.5h that powers on, the voltage applying is 0.57U
r;
E, the stage IV of exerting pressure heats up: the two ends of tantalum capacitor are applied to direct voltage at the temperature of 230 DEG C, and the 2h that powers on, the voltage applying is 0.5U
r;
F, naturally cooling: tantalum capacitor is at room temperature recovered to 10h;
G, rise again and exert pressure: the two ends of cooled tantalum capacitor are applied to direct voltage at the temperature of 85 DEG C, the 12h that powers on, the voltage applying is 1U
r.
The capacitor of choosing 75V1000 μ F specification adopt respectively prior art and according to implement 1 be prepared after, at 200 DEG C, after 1000h performance test, therefrom extract 5 capacitors and carry out Contrast of Electrical Parameter, comparing result is in table one.
Table one
After the capacitor of choosing 100V400 μ F specification adopts respectively prior art and embodiment 2 to be prepared, at 200 DEG C, after 1000h performance test, therefrom extract 5 capacitors and carry out Contrast of Electrical Parameter, comparing result is in table two.
Table two
After the capacitor of choosing 125V220 μ F specification adopts respectively prior art and embodiment 3 to be prepared, at 200 DEG C, after 1000h performance test, therefrom extract 5 capacitors and carry out Contrast of Electrical Parameter, comparing result is in table three.
Table three
Can find out from the experimental data of table one, table two and table three, product after the present invention's preparation still can normally be worked in the hot environment of 200 DEG C, and the unit for electrical property parameters such as loss, leakage current of capacitance is all controlled in allowed limits, and the consistency of its unit for electrical property parameters is better than prior art, can meet the instructions for use under wide temperature condition completely.
Claims (3)
1. the wide temperature tantalum capacitor of a high energy preparation method, is characterized in that: it comprises following steps:
(1), regulate tantalum piece pressed density D;
Concrete downward scope is: 0.7D
0≤ D
1≤ 0.9D
0, wherein D
0for nominal pressed density;
(2), classification forms; Concrete steps are as follows:
A, low pressure stage: when voltage is less than 0.7 times of formation voltage, adopt the HNO that volumn concentration is 0.1%
3solution, room temperature is boosted;
B, intensification section: voltage reaches 0.7 times and forms after voltage, improves formation temperature to 90 ± 2 DEG C, and constant voltage 1h～2h;
C, high pressure section: 0.7～1 times forms voltage, tantalum fuse is transferred to H
3pO
4in the aqueous solution, continue to form, temperature is adjusted into 85 ± 3 DEG C;
D, heat treatment: heat treatment temperature is 300 DEG C～400 DEG C, and heat treatment time is 20min～60min;
E, high temperature compensation form: the anode tantalum piece immersion temperature of soaking through persulfuric acid is 160 DEG C～180 DEG C, carries out electrochemical treatments 1h～2h in the electrolyte that mixed by phosphoric acid and ethylene glycol, apply voltage and be 1.1～1.4 times of capacitor rated voltage;
(3), prepare wide temperature Working electrolyte;
Concrete formula is: mass percent is 42%, and H2SO4 solution+property-modifying additive+hydrogen agent disappears;
Wherein property-modifying additive is the one in ethylene glycol, EGME, sweet mellow wine, succinic acid, or formulated by two kinds of volume ratios of pressing 1:1～1:1.5 in ethylene glycol, EGME, sweet mellow wine, succinic acid; The hydrogen agent that disappears is the one in paranitrobenzoic acid ammonium, p-nitrophenol, p-nitrophenyl methyl alcohol, or formulated by two kinds of volume ratios of pressing 1:1～1:1.5 in paranitrobenzoic acid ammonium, p-nitrophenol, p-nitrophenyl methyl alcohol;
(4), low tempertaure storage: store 2h～5h under-68 ± 2 DEG C of conditions;
(5), high temperature aging.
2. the wide temperature tantalum capacitor of a kind of high energy according to claim 1 preparation method, is characterized in that: in described electrolyte, the concentration of volume percent of phosphoric acid is 1%～15%, the concentration of volume percent of ethylene glycol solution is 50%～70%, and all the other are water.
3. the wide temperature tantalum capacitor of a kind of high energy according to claim 1 preparation method, is characterized in that: the high temperature aging in described step (5) comprises following method step:
(1), the tantalum capacitor after encapsulation is at room temperature used to 2V～5V constant voltage;
(2), the stage I of exerting pressure heats up: the two ends of the tantalum capacitor after encapsulation are applied to direct voltage at the temperature of 80 DEG C～90 DEG C, the 12h～24h that powers on, the voltage applying is 1U
r, wherein, U
rfor tantalum capacitor rated voltage;
(3), the stage II of exerting pressure heats up: the two ends of tantalum capacitor are applied to direct voltage at the temperature of 120 DEG C～130 DEG C, the 1h～3h that powers on, the voltage applying is 0.62～0.65U
r;
(4), the stage III of exerting pressure heats up: the two ends of tantalum capacitor are applied to direct voltage at the temperature of 190 DEG C～205 DEG C, the 1.5h～3h that powers on, the voltage applying is 0.55～0.6U
r;
(5), the stage IV of exerting pressure heats up: the two ends of tantalum capacitor are applied to direct voltage at the temperature of 225 DEG C～230 DEG C, the 1.5h～2h that powers on, the voltage applying is 0.45～0.52U
r;
(6), naturally cooling: tantalum capacitor is at room temperature recovered to 5h～12h;
(7), rise again and exert pressure: the two ends of cooled tantalum capacitor are applied to direct voltage at the temperature of 80 DEG C～90 DEG C, the 12h～24h that powers on, the voltage applying is 1U
r.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104517734A (en) * | 2014-12-01 | 2015-04-15 | 益阳家鑫电子科技有限公司 | Working electrolyte and preparation method thereof of high-temperature resistant aluminum electrolytic capacitor |
| CN106206019A (en) * | 2016-08-24 | 2016-12-07 | 中国振华（集团）新云电子元器件有限责任公司 | A kind of high energy width temperature tantalum capacitor expanded series manufacturing process |
| CN107958785A (en) * | 2017-11-22 | 2018-04-24 | 贵州振华电子信息产业技术研究有限公司 | High voltage-rated solid electrolyte Ta capacitor anode and preparation method thereof, solid electrolyte Ta capacitor |
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| CN103325570A (en) * | 2013-07-03 | 2013-09-25 | 中国振华（集团）新云电子元器件有限责任公司 | Preparation method of high temperature resistant capacitor |
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| EP0753869A2 (en) * | 1995-07-13 | 1997-01-15 | Avx Corporation | Selective anodization of capacitor anode body |
| CN101533717A (en) * | 2009-04-24 | 2009-09-16 | 株洲日望电子科技有限公司 | Method for manufacturing super-capacity non-solid electrolyte tantalum condenser |
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| CN104517734A (en) * | 2014-12-01 | 2015-04-15 | 益阳家鑫电子科技有限公司 | Working electrolyte and preparation method thereof of high-temperature resistant aluminum electrolytic capacitor |
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| CN106206019B (en) * | 2016-08-24 | 2019-03-05 | 中国振华（集团）新云电子元器件有限责任公司 | A kind of wide temperature tantalum capacitor expanded series manufacturing process of high energy |
| CN107958785A (en) * | 2017-11-22 | 2018-04-24 | 贵州振华电子信息产业技术研究有限公司 | High voltage-rated solid electrolyte Ta capacitor anode and preparation method thereof, solid electrolyte Ta capacitor |
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|---|---|
| CN104008899B (en) | 2016-09-07 |
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