CN104007332A - Substrate electricity leakage test method of switch tube - Google Patents
Substrate electricity leakage test method of switch tube Download PDFInfo
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- CN104007332A CN104007332A CN201310057398.8A CN201310057398A CN104007332A CN 104007332 A CN104007332 A CN 104007332A CN 201310057398 A CN201310057398 A CN 201310057398A CN 104007332 A CN104007332 A CN 104007332A
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Abstract
The invention discloses a substrate electricity leakage test method for a switch tube. The method includes the following steps: adopting a first step length to obtain a second range of a grid voltage corresponding to a maximum leakage current through scanning in a first range; and adopting a second step length to obtain a grid voltage corresponding the maximum leakage current through scanning in the second range, wherein the first step length is larger than the second step length. The test method first adopts a larger first step length to carry out rough scanning so as to reduce a value range of a test voltage and then adopts a second step length which is smaller in step length to carry out fine scanning so as to obtain a grid voltage corresponding to the maximum leakage current. Compared with a method which directly adopts a small step length to carry out a scanning test directly, test times are reduced significantly and the test efficiency is improved.
Description
Technical field
The present invention relates to component testing technology, particularly relate to a kind of substrate leakage method of testing of switching tube.
Background technology
The components and parts that complete for production, all need to test its reliability conventionally.In the time that the reliability of switching tube is assessed, need to test the maximum leakage current of its substrate or whether the corresponding grid voltage of the maximum leakage current of substrate meets operating characteristic.
In traditional method of testing, the drain electrode of switching tube is connect to operating voltage, substrate, source electrode connecting to neutral current potential, grid continuous test substrate electric current after choosing value within the scope of certain test voltage, obtains the lowest high-current value that occurs in the test process maximum leakage current as substrate.
For improve find device abnormal may, conventionally all progressively increase grid voltage test substrate electric current with smaller fixed step size since 0 volt of voltage, when step-length too hour, although precision is enough high, the time of testing is also relatively long, efficiency is lower.
Summary of the invention
Based on this, be necessary to provide one can reduce the test duration, improve the substrate leakage method of testing of the switching tube of testing efficiency.
A substrate leakage method of testing for switching tube, comprises the steps:
In the first scope, scan the second scope of obtaining grid voltage place corresponding to maximum leakage current with the first step-length;
Scan in described the second scope with the second step-length and obtain maximum leakage current and corresponding grid voltage;
Wherein, the described first step is grown up in the second step-length.
In an embodiment, the described step that scans the second scope of obtaining grid voltage place corresponding to maximum leakage current with the first step-length in the first scope is specially therein:
Since the test voltage lower limit of the first scope, progressively increase test voltage with the first step-length;
Under current test voltage, test substrate electric current;
Judge whether substrate current corresponding to current test voltage is less than substrate current corresponding to last test voltage, if so, deduct the test voltage lower limit of the first step-length as described the second scope using current test voltage; Otherwise continuing to increase test voltage tests.
In an embodiment, the described step that scans the grid voltage that obtains maximum leakage current and correspondence with the second step-length in described the second scope is specially therein:
From the test voltage lower limit of described the second scope, progressively increase test voltage with the second step-length;
Under current test voltage, test substrate electric current;
Judge whether substrate current corresponding to current test voltage is less than substrate current corresponding to last test voltage, if so,, taking substrate current corresponding to current test voltage as maximum leakage current, current test voltage is grid voltage corresponding to maximum leakage current; Otherwise continuing to increase test voltage tests.
In an embodiment, the described step that scans the second scope of obtaining grid voltage place corresponding to maximum leakage current with the first step-length in the first scope is specially therein:
Since the test voltage upper limit of the first scope, progressively reduce test voltage with the first step-length;
Under current test voltage, test substrate electric current;
Judge whether substrate current corresponding to current test voltage is less than substrate current corresponding to last test voltage, if so, add the test voltage upper limit of the first step-length as described the second scope taking current test voltage; Otherwise continuing to reduce test voltage tests.
Therein in an embodiment, the described step that obtains grid voltage corresponding to maximum leakage current that scans in described the second scope with the second step-length is specially:
From the test voltage upper limit of described the second scope, progressively reduce test voltage with the second step-length;
Under current test voltage, test substrate electric current;
Judge whether substrate current corresponding to current test voltage is less than substrate current corresponding to last test voltage, if so,, taking substrate current corresponding to current test voltage as maximum leakage current, current test voltage is grid voltage corresponding to maximum leakage current; Otherwise continuing to reduce test voltage tests.
In an embodiment, described the first scope is 0 to 3 volt therein.
In an embodiment, described the first step-length is 0.5 volt therein.
In an embodiment, the second step-length is 0.1 volt therein.
Above-mentioned method of testing, first adopt larger first step progress row coarse scanning to dwindle the span of test voltage, then adopt the second step progress row close scanning that step-length is less to obtain maximum leakage current and corresponding grid voltage, directly carry out the method for sweep test than traditional little step-length of direct employing, can greatly reduce testing time, improve testing efficiency.
Brief description of the drawings
Fig. 1 is the substrate leakage method of testing process flow diagram of the switching tube of an embodiment;
Fig. 2 is the particular flow sheet of the step S110 in one embodiment of flow process shown in Fig. 1;
Fig. 3 is the particular flow sheet of the step S120 in one embodiment of flow process shown in Fig. 1;
Fig. 4 is the particular flow sheet of the step S110 in another embodiment of flow process shown in Fig. 1;
Fig. 5 is the particular flow sheet of the step S120 in another embodiment of flow process shown in Fig. 1.
Embodiment
As shown in Figure 1, be the substrate leakage method of testing process flow diagram of the switching tube of an embodiment.This switching tube can be N-type metal-oxide-semiconductor or P type metal-oxide-semiconductor etc.The method comprises the steps.
Step S110: scan the second scope of obtaining grid voltage place corresponding to maximum leakage current with the first step-length in the first scope.The first scope is the span that is added in the test voltage of switching tube grid, and grid voltage corresponding to maximum leakage current should drop in the first scope, and the first scope can rule of thumb be determined.For example, for most of N-type metal-oxide-semiconductor, grid voltage corresponding to substrate maximum leakage current is about 1.2 volts.Therefore the first scope can be defined as to 0 ~ 3 volt.Certainly the value of this first scope is not limited to this, can choose flexibly in other embodiments.The first step-length is the amplitude of variation that is added in the voltage of switching tube grid, and in the time that test voltage is carried out value, test voltage is with this first step-length or increasing or subtract and change.
This step is further dwindled the span of test voltage through coarse scanning test, obtain the second scope.
Step S120: scan in described the second scope with the second step-length and obtain maximum leakage current and corresponding grid voltage.On the basis of step S110, the second scope is less than the first scope, and test voltage value in the second scope can adopt less step-length, i.e. second step progress row close scanning detects leakage current.
In one embodiment, as shown in Figure 2, step S110 specifically comprises the steps.
S111: using the test voltage lower limit of the first scope as test voltage test substrate electric current.
S113: increase test voltage with the first step-length.
S115: under current test voltage, test substrate electric current.
S117: judge whether substrate current corresponding to current test voltage is less than substrate current corresponding to last test voltage, if so, performs step S119, otherwise execution step S113.
S119: deduct the test voltage lower limit of the first step-length as described the second scope using current test voltage.
Taking aforementioned N-type metal-oxide-semiconductor as example, since 0 volt, test respectively 0.5 volt, 1.0 volts, 1.5 volts until the substrate current under the voltages such as 3 volts.Due to generally 1.2 volts time, it is maximum that leakage current reaches, therefore in the time of coarse scanning, and relatively measured substrate current I when 1.0 volts and 1.5 volts
1, I
2if, I
1< I
2, 1.5 volts is turning point, is deducted 0.5 volt of the first step-length, 1.0 volts of lower limits as the second scope that obtain, and being also 1 ~ 3 volt is the second scope; If I
1> I
2, 1.0 volts is turning point, is deducted 0.5 volt of the first step-length, the 0.5 volt of lower limit as the second scope obtaining, and being also 0.5 ~ 3 volt is the second scope.
In the present embodiment, as shown in Figure 3, step S120 specifically comprises the steps.
S121: using the test voltage lower limit of the second scope as test voltage test substrate electric current.
S123: increase test voltage with the second step-length.
S125: under current test voltage, test substrate electric current.
S127: judge whether substrate current corresponding to current test voltage is less than substrate current corresponding to last test voltage, if so, performs step S129, otherwise execution step S123.
S129: taking substrate current corresponding to current test voltage as maximum leakage current, current test voltage is grid voltage corresponding to maximum leakage current.
Taking aforementioned N-type metal-oxide-semiconductor as example, in the time that the second step-length is taken as 0.1 volt, according to circumstances, can carry out progressively test substrate electric current since 1 volt or 0.5 volt, can obtain comparatively accurate maximum leakage current.
In another embodiment, as shown in Figure 4, step S110 specifically comprises the steps.
S111 ': using the test voltage upper limit of the first scope as test voltage test substrate electric current.
S113 ': reduce test voltage with the first step-length.
S115 ': under current test voltage, test substrate electric current.
S117 ': judge whether substrate current corresponding to current test voltage is less than substrate current corresponding to last test voltage, if so, performs step S119 ', otherwise execution step S113 '.
S119 ': add the test voltage upper limit of the first step-length as described the second scope using current test voltage.
Taking aforementioned N-type metal-oxide-semiconductor as example, since 3 volts, test respectively 3 volts, 2.5 volts, 2 volts, 1.5 volts until the substrate current under the voltage such as 0 volt.Due to generally 1.2 volts time, it is maximum that leakage current reaches, therefore in the time of coarse scanning, and relatively measured substrate current I when 1.0 volts and 1.5 volts
1, I
2if, I
1< I
2, 1.5 volts is turning point, is added 0.5 volt of the first step-length, 2 volts of upper limits as the second scope that obtain, and being also 0 ~ 2 volt is the second scope; If I
1> I
2, 1.0 volts is turning point, is added 0.5 volt of the first step-length, 1.5 volts of upper limits as the second scope that obtain, and being also 0 ~ 1.5 volt is the second scope.
In the present embodiment, as shown in Figure 5, step S120 specifically comprises the steps.
S121 ': using the test voltage upper limit of the second scope as test voltage test substrate electric current.
S123 ': reduce test voltage with the second step-length.
S125 ': under current test voltage, test substrate electric current.
S127 ': judge whether substrate current corresponding to current test voltage is less than substrate current corresponding to last test voltage, if so, performs step S129 ', otherwise execution step S123 '.
S129 ': taking substrate current corresponding to current test voltage as maximum leakage current, current test voltage is grid voltage corresponding to maximum leakage current.
Taking aforementioned N-type metal-oxide-semiconductor as example, in the time that the second step-length is taken as 0.1 volt, according to circumstances, can be from 1.5 volts or 2 volts start to gradually reduce test voltage and carry out test substrate electric current, can obtain comparatively accurate maximum leakage current.
Above-mentioned method of testing, first adopt larger first step progress row coarse scanning to dwindle the span of test voltage, then adopt the second step progress row close scanning that step-length is less to obtain maximum leakage current and corresponding grid voltage, directly carry out the method for sweep test than traditional little step-length of direct employing, can greatly reduce testing time, improve testing efficiency.
The above embodiment has only expressed several embodiment of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (8)
1. a substrate leakage method of testing for switching tube, comprises the steps:
In the first scope, scan the second scope of obtaining grid voltage place corresponding to maximum leakage current with the first step-length;
Scan in described the second scope with the second step-length and obtain maximum leakage current and corresponding grid voltage;
Wherein, the described first step is grown up in described the second step-length.
2. the substrate leakage method of testing of switching tube according to claim 1, is characterized in that, the described step that scans the second scope of obtaining grid voltage place corresponding to maximum leakage current with the first step-length in the first scope is specially:
Since the test voltage lower limit of the first scope, progressively increase test voltage with the first step-length;
Under current test voltage, test substrate electric current;
Judge whether substrate current corresponding to current test voltage is less than substrate current corresponding to last test voltage, if so, deduct the test voltage lower limit of the first step-length as described the second scope using current test voltage; Otherwise continuing to increase test voltage tests.
3. the substrate leakage method of testing of switching tube according to claim 2, is characterized in that, the described step that scans the grid voltage that obtains maximum leakage current and correspondence with the second step-length in described the second scope is specially:
From the test voltage lower limit of described the second scope, progressively increase test voltage with the second step-length;
Under current test voltage, test substrate electric current;
Judge whether substrate current corresponding to current test voltage is less than substrate current corresponding to last test voltage, if so,, taking substrate current corresponding to current test voltage as maximum leakage current, current test voltage is grid voltage corresponding to maximum leakage current; Otherwise continuing to increase test voltage tests.
4. the substrate leakage method of testing of switching tube according to claim 1, is characterized in that, the described step that scans the second scope of obtaining grid voltage place corresponding to maximum leakage current with the first step-length in the first scope is specially:
Since the test voltage upper limit of the first scope, progressively reduce test voltage with the first step-length;
Under current test voltage, test substrate electric current;
Judge whether substrate current corresponding to current test voltage is less than substrate current corresponding to last test voltage, if so, add the test voltage upper limit of the first step-length as described the second scope taking current test voltage; Otherwise continuing to reduce test voltage tests.
5. the substrate leakage method of testing of switching tube according to claim 4, is characterized in that, the described step that obtains grid voltage corresponding to maximum leakage current that scans in described the second scope with the second step-length is specially:
From the test voltage upper limit of described the second scope, progressively reduce test voltage with the second step-length;
Under current test voltage, test substrate electric current;
Judge whether substrate current corresponding to current test voltage is less than substrate current corresponding to last test voltage, if so,, taking substrate current corresponding to current test voltage as maximum leakage current, current test voltage is grid voltage corresponding to maximum leakage current; Otherwise continuing to reduce test voltage tests.
6. according to the substrate leakage method of testing of the switching tube described in claim 1 to 5 any one, it is characterized in that, described the first scope is 0 to 3 volt.
7. according to the substrate leakage method of testing of the switching tube described in claim 1 to 5 any one, it is characterized in that, described the first step-length is 0.5 volt.
8. according to the substrate leakage method of testing of the switching tube described in claim 1 to 5 any one, it is characterized in that, the second step-length is 0.1 volt.
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Cited By (6)
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| CN106653095A (en) * | 2016-11-01 | 2017-05-10 | 上海华力微电子有限公司 | Method for rapidly collecting threshold voltage distribution |
| CN107886994A (en) * | 2017-11-09 | 2018-04-06 | 上海华力微电子有限公司 | A kind of quick method for collecting flash threshold voltage's distribiuting |
| CN109254240A (en) * | 2017-07-12 | 2019-01-22 | 爱思开海力士有限公司 | The method for extracting current level relevant to interconnection interruption |
| CN109270425A (en) * | 2018-11-02 | 2019-01-25 | 上海华力微电子有限公司 | A kind of scan testing methods |
| CN111220888A (en) * | 2019-12-03 | 2020-06-02 | 海光信息技术有限公司 | Method and device for testing turn-on voltage of transistor |
| CN116008770A (en) * | 2023-03-28 | 2023-04-25 | 合肥新晶集成电路有限公司 | Scan test method, scan test device, and computer-readable storage medium |
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| CN109254240A (en) * | 2017-07-12 | 2019-01-22 | 爱思开海力士有限公司 | The method for extracting current level relevant to interconnection interruption |
| CN109254240B (en) * | 2017-07-12 | 2021-01-08 | 爱思开海力士有限公司 | Method for extracting current level related to interconnection interruption |
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| CN111220888A (en) * | 2019-12-03 | 2020-06-02 | 海光信息技术有限公司 | Method and device for testing turn-on voltage of transistor |
| CN111220888B (en) * | 2019-12-03 | 2022-04-22 | 海光信息技术股份有限公司 | Method and device for testing turn-on voltage of transistor |
| CN116008770A (en) * | 2023-03-28 | 2023-04-25 | 合肥新晶集成电路有限公司 | Scan test method, scan test device, and computer-readable storage medium |
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