CN1040063A - Utilize the various active gas that generates respectively to prepare the device of deposited of large area - Google Patents

Abstract

The device of preparation polycomponent deposited of large area, in activation chamber separately, activate two or more pleurodiaphragmatic in terspace material gas respectively, activation gas is incorporated into filming chamber's mixing respectively by gas introduction port separately, react near the substrate surface in filming chamber, thereby the described deposited film of shape on substrate, gas introduction port is rectangle or ellipse, parallel placement, its major axis is the twice of minor axis at least, spacing is less than minor axis, activating in the chamber has shaft-like microwave transmitting antenna, or the silk that has the metallic substance of katalysis to make, or produces the device of the pair of plate-shaped electrode of rf electric field as the generation resolution.

Description

Utilize the various active gas that generates respectively to prepare the device of deposited of large area

The present invention relates to utilize vapor growth method to prepare the modifying device of functional deposited film, wherein utilize the multiple film forming reactive gas that generates respectively.More particularly, the present invention relates to a kind of like this device, this device can prepare deposited of large area, and can control every kind of component content of functional deposited film to be prepared independently.

Making such as the incident light detector, the light-sensitive unit in the electrofax, photoelectric device during semiconductor elements such as liquid crystal display drive circuit, needs the cheap deposited of large area that generates in large quantities.

Before this, it is believed that utilizing vapor growth method to prepare aspect the deposited film, deposited of large area can utilize plasma body, heat, the energy that pleurodiaphragmatic in terspace material gas is resolved in conducts such as light prepares.Under any circumstance, independent film forming unstripped gas is usefulness seldom, when both having made the deposited film that constitutes at the preparation single component, also usually a kind of diluent gas is joined in the film forming unstripped gas.Furtherly, when utilizing vapor growth method to prepare the deposited film of multiple composition, general all in the mixed gas of the multiple film forming unstripped gas introduction filming chamber.

Yet any traditional deposited film preparation method all has following problems.

At first, when both having made the deposited film that constitutes at the preparation single component, various film forming parameters are comprised the ratio of mixture of film forming unstripped gas and diluent gas must be optimized, this is that the deposited film that obtains in order to make has the performance of expectation, in this case, film forming parameter tolerance band is rather narrow.Furtherly, when the deposited film that the multiple composition of preparation constitutes, various unstripped gases corresponding to film component have the decomposition energy of different levels, therefore, the parameter of various produced films, such as the flow rate ratio between the film forming unstripped gas of introducing in the filming chamber, more be tied in the time of will be than preparation single component mould.In addition, change flow rate than and very difficult the accomplishing of quality of not reducing the film of acquisition simultaneously.

Secondly, when decomposing above-mentioned multiple film forming unstripped gas, various correlated conditions need accurately control, so the controlled range of the composition of the performance of film and film is restricted.

In order to overcome foregoing problems, a kind of method has been proposed, allow each of multiple film forming unstripped gas in the activating chamber separately that separates with filming chamber, obtain activation evergy independently, the various film forming of activatory unstripped gases are introduced filming chamber respectively, in indoor mixing and interreaction, thereby in substrate, generate deposited film.(for example, seeing Japanese patent gazette, No.Sho61(1986)-179869).According to this method, the activity of different film forming gas can be controlled independently rightly.Owing to this reason, when preparation single component film, might enlarge the scope of film forming parameter, thereby improve the performance of film.When preparation multicomponent deposited film, this can provide film forming parameter in wide region, thereby guarantees that the deposited film that obtains has desired quality.

But, for the device of realizing a kind of film method of formation in above-mentioned back, to compare with the device for preparing the above-mentioned preceding a kind of film method of formation of deposited film realization with gaseous mixture, the preparation deposited of large area is difficult.

In other words, before above-mentioned in a kind of traditional method, as long as can offer gaseous mixture equably decomposing energy on a large scale, thereby deposited film is generated on large-area substrates, if and can in filming chamber, accurately adjust relevant film forming parameter, deposited of large area might be generated.

On the other hand, in a kind of method in above-mentioned back, because each film forming unstripped gas at first activates in the activating chamber separately that separates with filming chamber, and then with each activatory film forming unstripped gas be incorporated in the filming chamber respectively, in indoor mixing and interreaction, thereby in substrate, generate deposited film, thus therefrom the deposited film of Huo Deing at thickness and/or be easy to generate inhomogeneous qualitatively.Just because of this, it is exceedingly difficult utilizing this method to prepare the even well-balanced required deposited of large area of quality simultaneously of thickness.A kind ofly be suitable for realizing that the exemplary device of this method is the sort of device that a plurality of nozzle holes or ring-type gas release mouth are provided as shown in figure 25.When the device that has a structure shown in Figure 25 in utilization is realized this method,, be easy to make the thickness and the quality of deposited film of acquisition inhomogeneous because the distance between above-mentioned a plurality of nozzle holes or the ring-type gas release mouth is different.In this respect, a kind of method in above-mentioned back can not satisfy preparation all requirements of uniform needed deposited of large area on quality and thickness.

The objective of the invention is in order to overcome the problems referred to above of the prior art and a kind of device to be provided, this device can be made of multiple composition with a kind of method preparation in above-mentioned back, qualitatively with thickness on uniform large area functional deposited films all, wherein, multiple film forming unstripped gas is activated independently in region of activation separately and is formed multiple activation film forming gas, gas intermingling and interreaction that these are activated are to generate the above-mentioned functions deposited film in the substrate in the film forming district.

The present inventor makes extensive studies, to overcome the problems referred to above of the prior art and to reach purpose of the present invention.As result of study, found such fact, promptly when utilizing conventional apparatus to prepare the deposited film that multiple composition constitutes, the relative distance between the structure of the gas introduction port that each is above-mentioned and the above-mentioned a plurality of gas introduction port is all influential to the thickness and the quality of the deposited of large area that will obtain.This conventional apparatus comprises: a plurality of activating chamber, and in each activating chamber, each of multiple film forming unstripped gas is activated into the activation film forming gas of plasma state under the intensity of activation effect; With a filming chamber that a plurality of air feeders are provided, these air feeders have near a plurality of gas introduction port that are located at the substrate that is positioned on the indoor substrate holder respectively, the above-mentioned multiple film forming activated gas that is in plasma state is introduced respectively in the above-mentioned filming chamber by gas introduction port separately, the multiple film forming activated gas of Yin Ruing mixes in above-mentioned substrate and interreaction like this, generates deposited film.

Result as further studying on the basis of finding has in the above realized the present invention.The present invention includes following three aspects.

Device according to a first aspect of the invention has following structure.

A kind of device that is used to prepare the deposited of large area that multiple composition constitutes, in activating chamber separately, under the effect of resolution, activate two or more film forming unstripped gas, such activatory gas is introduced in the filming chamber by gas introduction port separately, near the substrate surface of in filming chamber, placing, admixture activation gas and make its interreaction, thereby in substrate, generate above-mentioned deposited film, wherein, each of above-mentioned a plurality of activating chamber all has a shaft-like microwave transmitting antenna, the microwave that various film forming unstripped gases are launched by flagpole antenna around flagpole antenna activates into plasma state, every kind of gas that is activated is along transporting with the vertical direction of the flagpole antenna longitudinal axis, and each gas introduction port is designed to rectangle or ellipse, the length of its major axis is the twice at least of minor axis length, and described a plurality of gas introduction port is placed parallel to each other, and its distance each other is less than the length of minor axis.

Device according to a second aspect of the invention has following structure.

A kind of device that is used to prepare the deposited of large area that multiple composition constitutes, in activating chamber separately, under the effect of resolution, activate two or more film forming unstripped gas, such activatory gas is introduced in the filming chamber by gas introduction port separately, near the substrate surface of in filming chamber, placing, admixture activation gas and make its interreaction, thereby in substrate, generate above-mentioned deposited film, wherein, each of above-mentioned a plurality of activating chamber all has a resistance wire of being made by the metallic substance that can present katalysis, every kind of film forming unstripped gas is activated into plasma state under the effect of the heat that electric energy produced of supplying with resistance wire, every kind is activated gas along transporting with the vertical direction of resistance wire, and each gas introduction port is designed to rectangle or ellipse, the length of its major axis is the twice at least of minor axis length, and these gas introduction port place parallel to each other, and its distance each other is less than the length of minor axis.

Device according to a third aspect of the invention we has following structure.

A kind of device that is used to prepare the deposited of large area that multiple composition constitutes, in activating chamber separately, under the effect of resolution, activate two or more film forming unstripped gas, such activatory gas is introduced in the filming chamber by gas introduction port separately, near the substrate surface of in filming chamber, placing, admixture activation gas and make its interreaction, thereby in substrate, generate above-mentioned deposited film, wherein, each of above-mentioned a plurality of activating chamber has pair of discs shape electrode, every kind of film forming unstripped gas is activated into plasma state under the rf electric field effect that is added in interelectrode power supply generation, every kind is activated gas along transporting with the vertical direction of rf electric field direction, and, each gas introduction port is designed to rectangle or ellipse, the length of its major axis is the twice at least of minor axis length, and these gas introduction port place parallel to each other, and its distance each other is less than the length of minor axis.

In any device according to the present invention, by controlling the activation ratio of multiple film forming gas independently, can prepare uniform deposited of large area, keep the accurately quality of controlling diaphragm simultaneously, or the composition of accurately controlling deposited film in wide region is than such advantage.

Fig. 1 is the synoptic diagram of analysing and observe along short-axis direction, the basic embodiment of the device of expression preparation deposited film according to a first aspect of the invention.

Fig. 2 is the structure of expression according to the gas introduction port in the device of preparation deposited film of the present invention.

Fig. 3 is corresponding to gas introduction port position shown in Figure 2, the distribution curve of the composition ratio of the deposited film that is formed by preparation deposited film device shown in Figure 1.

The curve of the relation between the variation range of the composition ratio of Fig. 4 deposited film that to be expression generated by preparation deposited film device shown in Figure 1 and the shape of gas introduction port.

Fig. 5 is the curve of the relation between the arrangement of the variation range of composition ratio of the deposited film that generates of expression preparation deposited film device shown in Figure 1 and gas introduction port.

Fig. 6 is the explanatory vertical view of preparation deposited film device shown in Figure 1.

Fig. 7 is the synoptic diagram of analysing and observe along short-axis direction, the basic embodiment of the device of expression preparation deposited film according to a second aspect of the invention.

Fig. 8 is corresponding to gas introduction port position shown in Figure 2, the distribution curve of the composition ratio of the deposited film that is generated by preparation deposited film device shown in Figure 7.

The curve of the relation between the variation range of the composition ratio of Fig. 9 deposited film that to be expression generated by preparation deposited film device shown in Figure 7 and the shape of gas introduction port.

The curve of the relation between the variation range of the composition ratio of Figure 10 deposited film that to be expression generated by preparation deposited film device shown in Figure 7 and the arrangement of gas introduction port.

Figure 11 is the synoptic diagram of analysing and observe along short-axis direction, the basic embodiment of the device of expression preparation deposited film according to a third aspect of the invention we.

Figure 12 is corresponding to gas introduction port position shown in Figure 2, the distribution curve of the composition ratio of the deposited film that is generated by preparation deposited film device shown in Figure 11.

The curve of the relation between the variation range of the composition ratio of Figure 13 deposited film that to be expression generated by preparation deposited film device shown in Figure 11 and the shape of gas introduction port.

Figure 14 is the curve of the relation between the arrangement of the variation range of composition ratio of the deposited film that generates of expression preparation deposited film device shown in Figure 11 and gas introduction port.

Figure 15 is the sectional view along short-axis direction, an embodiment of the device of expression preparation deposited film according to a first aspect of the invention.

Figure 16 is the indicative view of the internal state of preparation deposited film device shown in Figure 15.

Figure 17 is the sectional view along short-axis direction, another embodiment of the device of expression preparation deposited film according to a first aspect of the invention.

Figure 18 is the sectional view along short-axis direction, an embodiment of the device of expression preparation deposited film according to a second aspect of the invention.

Figure 19 is the indicative vertical view of the internal structure of preparation deposited film device shown in Figure 180.

Figure 20 is the sectional view along short-axis direction, another embodiment of the device of expression preparation deposited film according to a second aspect of the invention.

Figure 21 is the sectional view along short-axis direction, an embodiment of the device of expression preparation deposited film according to a third aspect of the invention we.

Figure 22 is the explanatory diagram of the inside of preparation deposited film device shown in Figure 21.

Figure 23 is the explanatory diagram of the gas introduction port in the preparation deposited film device shown in Figure 21.

Figure 24 is the sectional view along short-axis direction, another embodiment of the device of expression preparation deposited film according to a second aspect of the invention.

Figure 25 is the synoptic diagram of an embodiment of traditional preparation deposited film device.

Below with reference to accompanying drawing the present invention is described more accurately.

Fig. 1 is the cross-sectional schematic along short-axis direction, a basic embodiment of the device of expression preparation deposited film according to a first aspect of the invention. In the drawings, reference number 101-104 represents the shaft-like antenna of launched microwave. Microwave propagates into shaft-like antenna from waveguide, thereby causes shaft-like antenna periphery to the discharge of film forming raw material gas and activate gas. Shaft-like antenna can be made with the metal material that resembles nickel (Ni) or SUS one class, also can be with resembling silica (SiO₂) and three Al 2 O (Al₂O ₃) insulating materials of a class makes. The diameter of shaft-like antenna determines suitably that according to the kind of material, the diameter of waveguide and the overall volume of film forming room comparatively ideal value is 10 millimeters to 100 millimeters. In addition, the length of shaft-like antenna determines according to the area of deposited film to be prepared as required. Make it produce plasma on every side by the microwave to shaft-like antenna emission, microwave can obtain huge electric energy, and film forming raw material gas can evenly be activated with elongated shape.

The film forming raw material gas that activates is so respectively introduced via a plurality of gas introduction port 114-117, each is introduced, and mouth is rectangle or ellipse, the length of its major axis is at least 2 times of minor axis length, they are arranged in together parallel to each other, distance therebetween is narrower than the length of minor axis, and the gas of introducing mixes, and reaction generates deposited film in substrate 119 mutually.

Fig. 2 is the view of shape that the gas introduction port in film forming district is introduced activated gas in expression. For a plurality of rectangle gas introduction port 201-204, suppose that minor axis length is a, long axis length is b, and the distance between each gas introduction port is c, and then the distribution of the quality of the deposited film of discovery generation and thickness is according to changing than a: b: c.

For example, using hydrogen (H₂) be diluted to 10% tetrahydrochysene SiClx (SiH₄) gas is (hereinafter referred to as SiH₄/H ₂) and with the tetrahydrochysene germanium (GeH of diluted in hydrogen to 5%₄) gas is (hereinafter referred to as GeH₄/H ₂) added respectively microwave, and activate, be designated hereinafter simply as a-SiGe to be deposited as hydrogenated amorphous body SiGe(: in the time of H), according to than a: b: c, in the film of a-SiGe: H consists of, cause inhomogeneous. Fig. 3 represents as active material SiH₄Introduce active material GeH from gas introduction port 201 and 203₄When introducing from gas introduction port 202 and 204, the inhomogeneities of deposited film composition ratio. Abscissa represents gas introduction port along the position of minor axis, and wherein A, B, C, D correspond respectively to the position of the gas introduction port 201-204 shown in Fig. 2. Vertical coordinate represents a-S_ixGe _1-X: the composition among the H compares X.

Here, the inhomogeneities that film consists of is expressed as the excursion △ X of X, (wherein the X value is measured by X ray trace distribution instrument and determined). In the device that b/a and c/a change respectively, as the a-SiGe that generates identical formation: during the H film, its composition is illustrated among Fig. 4 and Fig. 5 than the excursion △ X of X. As what from Fig. 4 and Fig. 5, can see, along the Si of short-axis direction_XGe _1-XConstituent of the film can dwindle widely than the degree of scatter of the excursion △ x of x, as long as the ratio b/a of major axis and minor axis is arranged greater than 2, and the distance between introducing mouthful to ratio (c/a) setting of minor axis length less than 1.

Among Fig. 4, when b/a changed, major axis kept constant value 20cm, and minor axis length changes. In addition, when changing b/a, the ratio of c/a is made as 1/2. When changing c/a, a is fixed to 2.5cm, and b is fixed to 20cm. In the situation of a=20cm and b=20cm, SiH₄/H ₂And GeH₄/H ₂Flow rate all be decided to be 800sccm, and when a changes, the ratio that is varied to of the variation of flow velocity and a. Pressure in the film forming room is 20Torr, is added in SiH₄/H ₂On microwave power be 800 watts (w), be added in GeH₄/H ₂On microwave power be 300 watts (w). In addition, the distance of substrate and introducing mouth is decided to be 8cm. If the distance between gas introduction port and the substrate is decided to be, 16cm for example, then the degree of scatter of the changing value △ x of composition ratio can reduce, shown in the some tracing among Fig. 4. Yet because compare for the situation of 8cm with distance, deposition will be reduced to less than 1/4, so the uniformity of promoting deposited film with the way of the distance between increase gas introduction port and the substrate is unpractical.

The top example of mentioning is illustrated in by activating respectively SiH₄/H ₂And GeH₄/H ₂, mix then the gas that activates like this and make their mutual reactions and deposition a-SiGe: in the situation of H film, the relation between the uniformity of the shape of gas introduction port and arrangement mode and deposited film. At the deposited film of other composition of preparation, such as a-SiC: during the deposited film of H film or single component, be in any situation that activates respectively at various gases, also can obtain with above-mentioned example in the similar effect of effect.

That is to say, the major axis of rectangle or oval gas introduction port and minor axis than to be not less than 2 for good, be not less than 4 better, the most suitable value is for being not less than 8. In addition, the distance between each gas introduction port to minor axis length than should be not more than 1/2 for good, the most suitable value be to be not more than 1/4. The gas introduction port of this kind shape arranges the uniformity that can greatly increase deposited film by above-mentioned arrangement mode. By lengthening gas introduction port in the length of long axis direction, the formation zone of deposited film can expand the area of expectation to. The number of the gas introduction port that is arranged in parallel in the short-axis direction increase in addition, can enlarge the formation zone of deposited film. Therefore, activate respectively the deposited film that various film forming gas can evenly generate desired area.

In addition, by mobile substrate on short-axis direction, can generate continuously more large-area deposited film at short-axis direction, the same as the device of the generation deposited film with will be discussed in more detail below shown in Figure 17. Further say, also can further improve by mobile substrate along the uniformity of the film quality of short-axis direction.

In the device of preparation deposited film according to the present invention, various film forming gas are activated respectively, thereby control the activation ratio of various film forming gas independently, can generate uniform deposited of large area, keep simultaneously can be in wide region accurately controlling diaphragm quality or deposited film composition than and do not reduce the such advantage of film quality.

Be used in according to the multiple film forming gas in the device of preparation deposited film of the present invention and comprise two or more gas, they each can be that gaseous mixture is as previously mentioned film forming gas.And the present invention is not subjected to the restriction of film forming gas kind.

The division plate 105-109 that forms rectangle or ellipse garden shape gas introduction port can be parallel to each other or not parallel to each other.They can make its surperficial plated with nickel (Ni) etc. with SUS or aluminium (Al) material.

The flagpole antenna that is used for launched microwave must vertically be installed in waveguide as shown in Figure 6, and must use silicon-dioxide, and aluminium sesquioxide etc. and filming chamber's insulation are because antenna has highfield.When increasing the number of gas introduction port, a plurality of flagpole antennas can be received on the waveguide along short-axis direction.In this case, the electric power of distributing to each flagpole antenna can be inserted how much controlling of part in the waveguide with antenna.In addition, utilize terminal 609,610 and adjusting knob 607,608 to control reflection wave as far as possible for a short time.

Fig. 7 is the sectional view according to a basic embodiment of the device of the preparation deposited film of second aspect present invention, wherein long resistance wire 701-708 spirally-wound.The length of whole resistance wire determines according to the area of deposited film to be generated on demand.The diameter of coil with around the desired value of the number of turns according to the whole size of the length of resistance wire and device and different, coil diameter 3-30 millimeter, number of turns 1-20 circle/centimetre for well.

Thereby activate film forming unstripped gas and activated gas along the time when long resistance wire 701-708 produces heat, can make the gas activation material of these elongated shapes in a big way enter the film forming district equably with the vertical direction migration of resistance wire major axis.

In device shown in Figure 7, a plurality of resistance wires can be placed on the gas travel direction, can increase the activation efficiency of film forming unstripped gas like this.The material of resistance wire is shown last IV A from element the same period, V A, and VI A chooses in the VII A group 4 transition metal element, strontium (Sr) for example, hafnium (Hf), lanthanum (La), molybdenum (Mo), niobium (Nb), rhenium (Re), tantalum (Ta), technetium (Tc), titanium (Ti), vanadium (V), tungsten (W), zirconium (Zr), also optional VIII family element is as palladium (Pd), platinum (Pt), rhodium (Rh), iridium (Ir).In above-mentioned element from the angle Selection of thermal resistance and reaction impedance, molybdenum, tantalum, tungsten, the most suitable resistance wire of doing of palladium and platinum, wherein tungsten is optimal selection.

The shape of resistance wire can be the coil of carrying above resembling, or plate shape or netted, and these all can reach same effect.When tabular shape, the thickness of plate, width and shape, the material of plate and resistance thereof are selected by such principle, equally when promptly coexisting coiled type can reach needed heater temperature, make adding that joule heat energy that the voltage after-current produces plays heating and impels the effect of reaction.When netted shape, situation is the same with tabular shape.

The whole size of tabular or netted resistance wire is according to the shape decision of gas introduction port.Be arranged on the direction of gas transfer when in addition, a plurality of resistance wires can be as coiled type.

The temperature of resistance wire is to consider that the reactivity of resistance wire and all gases and thermal impedance wait to select as mentioned above, and usually selects in 800 ℃ to 2000 ℃ scope.

Like this, multiple activated gas moves into elongate area, and enters the film forming district by the gas introduction port 713-716 of rectangle or ellipse garden shape.In this case, the shape of gas introduction port has remarkably influenced to the degree of uniformity of the deposited film of generation.

Fig. 2 represents activated gas is introduced the shape of the gas introduction port in film forming district.For a plurality of rectangle gas introduction port 201-204, suppose that minor axis length is a, long axis length is b, and the distance between each gas introduction port is c, and the quality of the deposited film that then find to generate and the distribution of thickness are according to than a: b: c changes.

For example, using hydrogen (H ₂) be diluted to 10% silicon tetrahydride (SiH ₄) gas is (hereinafter referred to as SiH ₄/ H ₂) and with the germanium tetrahydride (GeH of diluted in hydrogen to 5% ₄) gas is (hereinafter referred to as GeH ₄/ H ₂) activated by the heat energy that produces from resistance wire respectively, (be designated hereinafter simply as a-SiGe: in the time of H), at a-SiGe: in the formation of H film according to producing inhomogeneous to be deposited as hydrogenated amorphous body SiGe (SiGe) than a: b: c.Fig. 8 represents as active substance SiH ₄Introduce from gas introduction port 201 and 203, and active substance GeH ₄During from gas introduction port 202 and 204 introductions, the ununiformity of composition ratio in deposited film.Abscissa represents gas introduction port along the position that minor axis is arranged, A wherein, and B, C, D correspond respectively to the position of gas introduction port 201-204 shown in Figure 2.Ordinate is represented a-Si _XGe _1-X: the composition among the H compares X.

Here the ununiformity that constitutes of film be expressed as x variation range △ x(wherein x value determine by the observed value of x ray microanalyzer).In the device that b/a and c/a change respectively, as the a-SiGe that generates identical formation: during the H film, composition is illustrated among Fig. 9 and Figure 10 than the variation range △ x of x.From Fig. 9 and Figure 10, can find, along the Si of short-axis direction _XGe _1-XThe composition of film can dwindle widely than the degree of scatter of the variation range △ x of x, as long as the ratio b/a of major axis to minor axis is decided to be greater than 2, and the ratio (c/a) of the distance between the intake to minor axis length is decided to be less than 1.

Among Fig. 8, when b/a changed, major axis kept constant value 8cm, and minor axis length changes.When changing b/a, be decided to be 1/2 in addition than c/a.When changing c/a, a is fixed as 2cm, and b is fixed as 8cm.Under the situation of a=8cm and b=8cm, SiH ₄/ H ₂And GeH ₄/ H ₂Flow rate all be decided to be 200sccm.When a changes, the ratio that is varied to of the variation of flow rate and a.The internal pressure of filming chamber is 0.6 torr (Torr), and the resistance wire length overall is 8cm, 5 millimeters of coil diameters, the number of turns be 5 circles/centimetre, the strength of current that adds makes SiH ₄/ H ₂Reach 1700 ℃, GeH here ₄/ H ₂Reach 1500 ℃ over there.In addition, the distance between substrate and the gas introduction port is decided to be 5cm.If the distance between gas introduction port and the substrate is decided to be, 10cm for example, then the degree of scatter of the changing value △ x of composition ratio can reduce, (shown in the long and short dash line among Fig. 9).Yet because compare with the situation that distance is decided to be 5cm, deposition is reduced to less than 1/4, so the homogeneity of promoting deposited film with the way of the distance between increase gas introduction port and the substrate is unpractical.

The top example explanation of mentioning is at SiH ₄/ H ₂And GeH ₄/ H ₂Activated respectively, mix such activated gas then and make their interreactions and deposit a-SiGe: under the situation of H film, the relation between the shape of gas introduction port and arrangement mode and the deposited film homogeneity.Generating the deposited film of other composition, such as a-SiGe: during the deposited film of H film or single component, as long as all gases be respectively activated in any case, also can obtain with above-mentioned example in the similar effect of effect.

That is to say, the major axis of rectangle or ellipse garden shape gas introduction port to minor axis than to be not less than 2 for good, be not less than 4 better, only value is for being not less than 8.In addition, the distance between each gas introduction port to minor axis length than should be to be not more than 1/2 for good, only value is for being not more than 1/4.

Can increase the gas introduction port of this shape widely the homogeneity of deposited film by above-mentioned arrangement setting.By the length of lengthening gas introduction port at long axis direction, the generation zone of deposited film can be expanded the area of expectation to.In addition, the number of the gas introduction port that is arranged in parallel in the short-axis direction increase also can enlarge the generation zone of deposited film.Therefore, activate various film forming gas respectively, can generate desired deposited of large area equably.

In addition, by moving substrate, more large-area deposited film can be generated continuously, on short-axis direction as shown in Figure 17 and preparation deposited film device that will be discussed in more detail below along short-axis direction.Further say, also can further improve by mobile substrate along the homogeneity of the film quality of short-axis direction.

In preparation deposited film device according to the present invention, various film forming gas are difference activated, thereby control the activation ratio of various film forming gas independently, can prepare deposited of large area keep simultaneously can the controlling diaphragm quality or in wide region accurately the composition of control deposited film than and do not reduce the such advantage of film quality.

Be used in according to the multiple film forming gas in the preparation deposited film device of the present invention and comprise two or more gas, they each can be the gaseous mixture as previously mentioned film forming gas, and the present invention is not subjected to the restriction of film forming gas kind.

The division plate 723-727 that forms rectangle or ellipse garden shape gas introduction port can be parallel to each other or not parallel to each other.Their available SUS or aluminium (Al) material are made its surperficial plated with nickel (Ni) etc.

Optimum distance between gas introduction port and the resistance wire is according to the kind of film forming unstripped gas, flow rate, and variations such as pressure, its optimum value scope is the 0-100 millimeter.Distance when the active lifetime distance more in short-term of film forming unstripped gas should be longer than the active lifetime of film forming unstripped gas is short in good.

Figure 11 is the sectional view along short-axis direction, a basic embodiment of the device of expression preparation deposition film according to a third aspect of the invention we.1101-1108 represents 4 pairs of parallel plate electrodes, and rf electric field is added between the electrode pair, to activate various film forming unstripped gases respectively.Space between the every pair of parallel plate electrode isolates with isolator 1109-1111.Various film forming gas activate into plasma state between every pair of plate electrode, and along with the vertical direction of added rf electric field, promptly parallel direction migration with electrode plane, be introduced into film forming district 1125 through gas introduction port 1116-1119, mix and interreaction, in substrate 1120, generate deposited film.

Fig. 2 represents activated gas is introduced the shape of gas introduction port in film forming district for a plurality of rectangle gas introduction port 201-204, suppose that minor axis length is a, long axis length is b, distance between each gas introduction port is c, find that then the quality of the deposited film of generation and the distribution of thickness are according to ratio a: b: c changes.

For example, using hydrogen (H ₂) be diluted to 10% silicon tetrahydride (SiH ₄) gas is (hereinafter referred to as SiH ₄/ H ₂) and with the germanium tetrahydride (GeH of diluted in hydrogen to 5% ₄) gas is (hereinafter referred to as GeH ₄/ H ₂) added rf electric field and activation respectively, be deposited as hydrogenated amorphous body SiGe (SiGe) and (be designated hereinafter simply as a-SiGe: under situation H),, in the film of a-SiGe: H constitutes, produce unshapeliness according to than a: b: c.Figure 12 represents as active substance SiH ₄Introduce from gas introduction port 201 and 203, and active substance GeH ₄During from gas introduction port 202 and 204 introductions, the ununiformity of composition ratio in the deposited film.Abscissa represents gas introduction port along the position that minor axis is arranged, A wherein, and B, C, D correspond respectively to the position of gas introduction port 201-204 shown in Figure 2.Ordinate is represented a-Si _XGe _1-X: the composition among the H compares x.

Here the ununiformity that constitutes of film be expressed as x variation range △ x(wherein x by the observed value decision of x ray microanalyzer).In the device that b/a and c/a change respectively, as the a-SiGe of the identical formation of preparation: during the H film, composition is illustrated in Figure 13 and 14 than the variation range △ x of x.From Figure 13 and Figure 14, can find, along the Si of short-axis direction _XGe _1-XThe composition of film can reduce widely than the degree of scatter of the variation range △ x of x, as long as the ratio b/a of major axis to minor axis is decided to be greater than 2, the ratio (c/a) of the distance between the intake to minor axis length is decided to be less than 1.Among Figure 13, when b/a changed, major axis kept constant value 8cm, and the length variations of minor axis.In addition, when changing b/a, be decided to be 1/2 than c/a.When changing c/a, a is fixed to 2cm, and b is fixed to 8cm.Under the situation of a=8cm and b=8cm, SiH ₄/ H ₂And GeH ₄/ H ₂Flow rate all be decided to be 800Sccm.When a changes, the ratio that is varied to of the variation of flow rate and a.Pressure in the filming chamber is 0.4 torr (Torr).Be added in SiH ₄/ H ₂The radio frequency power here be 80 milliwatts/centimetre ², be added in GeH ₄/ H ₂Over there be 30 milliwatts/centimetre ²In addition, the distance between substrate and the intake is decided to be 8cm.If the distance between gas introduction port and the substrate is increased to, 16cm for example, the degree of scatter of the changing value △ x of composition ratio can reduce greatly, (seeing the long and short dash line among Figure 14).Yet because compare for the situation of 8cm with distance, deposition is reduced to less than 1/4, so the homogeneity of promoting deposited film with the way of the distance between increase gas introduction port and the substrate is unpractical.Example explanation above-mentioned is at SiH ₄/ H ₂And GeH ₄/ H ₂Be activated respectively, mix such activated gas then and make their interreactions and deposit a-SiGe: under the situation of H film, the relation between the shape of gas introduction port and arrangement mode and the deposited film homogeneity.At the deposited film of other composition of preparation, such as a-SiGe: during the deposited film of H film or single component, as long as all gases also can be obtained in any case by activated respectively with above-mentioned example in the similar effect of effect.

That is to say, the major axis of rectangle or ellipse garden shape gas introduction port to minor axis than to be not less than 2 for good, be not less than 4 better, only value is for being not less than 8.In addition, the distance between each gas introduction port to minor axis length than to be not more than 1/2 for good, only value is for being not more than 1/4.

Can increase the gas introduction port of this shape widely the homogeneity of deposited film by above-mentioned arrangement setting.By the length of lengthening gas introduction port at long axis direction, the generation district of deposited film can expand the area of expectation to.In addition, the number of the gas introduction port that is arranged in parallel in the short-axis direction increase also can enlarge the generation zone of deposited film.Therefore, activate various film forming gas respectively, can generate desired deposited of large area equably.

In addition, by moving substrate, can on short-axis direction, generate more large-area deposited film continuously along short-axis direction.Such generation deposited film device will be discussed in more detail below (seeing Figure 24).Further say, also can further improve by mobile substrate along the homogeneity of the film quality of short-axis direction.

In the device of preparation deposited film according to the present invention, the very easy setting of the gas introduction port of above-mentioned shape and arrangement, active film forming gas along with the vertical direction of rf electric field that is added on the plate electrode, promptly when the parallel plate electrode situation along the direction migration parallel with electrode plane.In this case, the bottom surface of electrode can be used as gas introduction port, perhaps as shown in figure 11, the bottom of electrode can load onto minor axis length littler be contraction-like assembly.The activation efficiency of the film forming gas relevant with electric power can by along and be added in the vertical direction migration of rf electric field between electrode activated gas and improve.

Therefore, in the device of preparation deposited film according to the present invention, all gases activates into plasma state respectively between discrete plate electrode, activated film forming unstripped gas is along moving with the vertical direction of rf electric field respectively, by a plurality of gas introduction port (rectangle or ellipse garden shape, long axis length is greater than the twice of minor axis length, arrangement parallel to each other, distance therebetween is shorter than the length of minor axis) enter the film forming district, mix and interreaction, in substrate, generate deposited film, can control the activation ratio of film forming gas independently, can generate large-area uniform deposition film, keeping simultaneously can the controlling diaphragm quality, with in wide region accurately the composition of control deposited film than and do not reduce the such advantage of film quality, as long as can activate all gases independently and control the activation ratio of all gases.

Be used in the gas that comprises two or more according to the various film forming unstripped gass in the device of preparation deposited film of the present invention, they each can be the mixed gas as above mentioned film forming gas, and the present invention is not subjected to the restriction of gaseous species.

Plate electrode can be parallel to each other or not parallel to each other.

The electrode that adds high frequency can be as shown in figure 11 on a side joint ground.Use such as silicon-dioxide (SiO between every counter electrode ₂) or aluminium sesquioxide (Al ₂O ₃) isolator isolate.Also can be with another kind of earthing shown in Fig. 3 embodiment, rf electric field be added in the central electrode plate and the periphery that separates with grounding electrode plate on.

According to the kind of film forming gas, optional SUS of electrode materials or aluminium etc., and plated with nickel etc. as required.

If gas introduction port is to be shunk by the electrode bottom to form (seeing Figure 11), the material of constriction can be the metal identical with electrode materials so, also can be the isolator of picture tetrafluoroethylene one class.

Reference example is more at large described the present invention, but the present invention is not limited in these examples.

Example 1

Figure 15 and 16 expressions prepare an embodiment of the device of deposited film according to a first aspect of the invention.

In Figure 15, reference number 1501-1504 is the flagpole antenna of launched microwave, and they are corresponding to these assemblies of 1601-1604 among Figure 16.In Figure 16, it is the flagpole antenna 1601-1604 of 32 cm long that microwave is transmitted into every from waveguide 1605-1607, makes flagpole antenna form plasma body on every side, as shown in figure 15, and to activate film forming gas.Another feature of device shown in Figure 16 be can not only Figure 16 along on major axis (α-α ') direction, and along can both forming deposited of large area on minor axis (β-β ') direction, these needs are just passable with substrate feeding device 1505 substrate 1507 that moves around in the arrow direction.

Be below device with the preparation deposited film shown in Figure 15,16 prepare amorphous silicon carbide film (below abbreviate a-SiC as: the example H film).Introduce hydrogen and argon gas with 150Sccm and 300Sccm respectively by gas inlet tube 1508 and 1511,400 watts, 2.45GHz(the capital is conspicuous) microwave be transmitted into flagpole antenna 1501-1504 respectively from waveguide 1605, make in the space that division plate left in 1512,1513 and 1515,1516 minutes, to form plasma body, thus form activated hydrogen (below abbreviate H as ^*).Simultaneously, introduce CH from gas inlet tube 1509 with 100Sccm ₄, and 200 watts microwave is transmitted into flagpole antenna 1502 from waveguide 1616, forms plasma body in the space between division plate 1513 and 1514, thus activated CH formed ₄Simultaneously, introduce SiF from gas inlet tube 1510 respectively with 150Sccm and 200Sccm ₄And Ar, 400 watts microwave is transmitted into flagpole antenna 1503 from waveguide 1607, forms plasma body in the space between division plate 1514 and 1515, thereby forms activated SiF ₄

Then, introduce H from each square gas introduction port 1517 and 1520 that is 37 centimetres of 2 cm x ^*, introduce activated CH from the gas introduction port 1518 of 35 centimetres of 1 cm x ₄, introduce activated SiF from the gas introduction port 1519 of 35 centimetres of 1.5 cm x ₄, enter film formation space 1521 respectively.They are to mix under 8 torrs and reaction at interior pressure, be deposited as a-SiC being heated to infrared lamp 1522 on 270 ℃ the glass substrate 1506 of 30 centimetres of sizes of 30 cm x: the H film, substrate 1506 is moved around by the speed of delivery mechanism 1505 with 5 cels along β-β ' direction of Figure 16.

The qualification result of film properties is: 1.4 microns of thickness, deposition were 23.2 dust/seconds, σ _p=1.6 * 10 ^-5Ohm ^-1Centimetre ^-1, σ _d=7.8 * 10 ^-12Ohm ^-1Centimetre ^-1, and E _Gopt=2.0 ev.Various changes of properties are on substrate plane: thickness, log σ _p, log σ _dAll within ± 10%, E _GoptWithin ± 2%.As mentioned above, the device that the uses preparation deposited film of the present invention a-SiC of depositing high-quality on big area equably: H film.And, because the H that forms ^*Amount, activated SiF ₄Amount and activated CF ₄Amount can both distinguish independently control, so can form the deposited film of required light belt energy gap, the deposition change a-SiC to require simultaneously: the composition of H film compares and does not reduce the quality of film.

In this example, can be in the formation zone of major axis (α-α ') and minor axis (β-β ') both direction expansion deposited film, the latter's expansion realizes by the substrate that moves around in minor axis β-β ' direction.Because in the length of major axis (α-α ') direction substrate is by the length decision of the shaft-like line of launched microwave, and the moving miles of relative movement decision that is the origin travelling backwards of the substrate length of minor axis (β-β ') direction; And and both can both change on request, so can obtain forming the zone of deposited film along major axis (α-α ') and minor axis (β-β ') both direction on big area.

And, though this embodiment is to forming a-SiC: H film and illustrate that it also can be used for forming the deposited film of other component.

In addition, the Shuo Liang And of the staff aerial of launched microwave is not restricted to the quantity in this example, can use more staff aerial yet.

Example 2

Figure 17 is an embodiment according to another preparation deposited film device of first aspect present invention.In Figure 17, produce the method for plasma body the same with shown in Figure 15 and 16 by microwave.The characteristics of this example are can be by transmitting the substrates 1705 of taking around an energy bending of roller volume from roller 1707 continuously, direction along Figure 16 minor axis (β-β ') forms deposited film continuously on big area, furl deposited film then on roller 1706.

Because can increase area along major axis (α-α ') direction, so deposited film can on request width and length form on big area continuously by the length that prolongs shaft-like microwave antenna.

Be below device with preparation deposited film shown in Figure 17 prepare the amorphous germanium film (below abbreviate a-SiGe as: the example H film).Introduce hydrogen and argon with 150Sccm and 400Sccm respectively from gas inlet tube 1708 and 1711,400 watt of 2.45 conspicuous microwave in capital is transmitted into flagpole antenna 1501 and 1504 respectively from waveguide 1605, forms plasma body to form H in the space of opening in 1710,1713 and 1715,1716 minutes with division plate ^*Simultaneously with rare 10% the GeF that separates of argon ₄Introduce with 300Sccm from gas introduction port 1709,150 watts microwave is transmitted into antenna 1702 by waveguide 1606, forms plasma body in the space between division plate 1713 and 1714, to form activated GeF ₄Simultaneously, introduce SiF from gas inlet tube 1710 with 200Sccm ₄And argon gas, 300 watts microwave sends to antenna 1703 from waveguide 1607, causes plasma body in the space between division plate 1714 and 1715, to form activated SiF ₄All be square intake 1717, the 1720 introducing H of 35 centimetres of 3 cm x then from each ^*, introduce activated GeF from the gas introduction port 1718 of 35 centimetres of 1 cm x ₄, introduce activated SiF from the gas introduction port 1719 of 35 centimetres of 1.5 cm x ₄, enter film formation space 1721 respectively.They are intermingling under interior pressure 50 torrs, and reaction is deposited as a-SiGe: the H film, simultaneously 30 centimetres wide, be heated to 240 ℃ with infrared lamp 1723 stainless steel substrate moves with the speed of 5 cm per minute.

In this example, except that above-mentioned materials, aluminium or heat-stable polyester or polyimide can be as the crooked substrates 105 of energy.A-SiGe under these conditions: the H film is deposited on the on-chip result that is heated to 240 ℃ and the film properties of evaluation is shown in table 1 sample 2.Other data have provided GeF ₄Flow rate and activate GeF ₄The result of microwave electric power when changing.

Table 1 has provided by independent control GeF ₄The activation amount prepare different light belt energy gap (E _Gopt) film, change a-SiGe simultaneously: the example of H membrane component.Plasma decomposes SiF ₄And GeF ₄Gaseous mixture.Prepare little E if want with the mode of common formation deposited film _GoptA-SiGe: the H film usually makes light electric conductivity (σ _p) reduce and dark conductivity (σ _d) increase the performance depreciation of film.But, in foundation device of the present invention, because can control activated GeF independently ₄So the film that can easily obtain having satisfied character comprises little E _GoptThe SiGe film.

And, by with activated GeF ₄Yield change H simultaneously ^*Yield and activated SiF ₄Yield, can form with different deposition and have the same in fact E _GoptDeposited film.

In the present embodiment, be deposited on on-chip a-SiGe: being distributed within 3% of the deposition of H film, at Si _XGe _1-XComponent in being distributed within 2% of x, the conductivity is distributed within 50%.I.e. a-SiGe: the H film can be equably deposits on the length that requires with 30 centimetres width.

As mentioned above, can on big area, be formed uniformly the SiGe film with the device of the preparation deposited film of Figure 17, and by controlling activated SiF independently ₄With activated GeF ₄Yield can be easily form the high-quality a-SiGe of band gap with requirement with the deposition that requires: the H film.

Though what show in this example is to form a-SiGe: the H film, by changing the deposited film that gaseous fraction or the like also can form other various ingredients.

Example 3

Device shown in Figure 17 deposits phosphorus-doped amorphous silicon fiml (Pa-Si is mixed in following abbreviation: the H film) will illustrate below in the use-case 2.

All introduce H from gas inlet tube 1708,1711 by 300Sccm ₂, 400 watt of 2.45 conspicuous microwave in capital is transmitted into antenna 1701-1704 respectively from waveguide 1605, causes plasma body in the space that division plate left in 1712,1713 and 1715,1716 minutes, thereby forms H ^*Introduce SiH from gas introduction port 1710 with 300Sccm simultaneously ₄, 300 watts microwave sends to antenna 1703 from waveguide 1607, causes plasma body in the space between division plate 1714 and 1715, thereby forms activated SiH ₄Simultaneously, with HD to 2, the PH of 500 ppm ₃Introduce from gas inlet tube 1709,150 watts microwave sends to antenna 1702 from waveguide 1606, causes plasma body in the space between division plate 1713 and 1714, thereby forms activated PH ₃

The H of Xing Chenging like this ^*, activated SiH ₄With activated PH ₃Be incorporated into film formation space 1721 from square gas introduction port 1717-1720.They are Hun He And reaction under 14 torrs at interior pressure, move the stainless steel substrate 1705 that is heated to 340 ℃ by infrared lamp 1723 by the speed with 5 cm per minute, are deposited as and mix P a-Si: the H film.

Under aforementioned similarity condition, mix P a-Si: the H film is deposited on the glass substrate that is heated to 240 ℃, has identified the performance of film, finds 1.6 microns of thickness average out to, and the average deposition rate was 17.8 dust/seconds, σ _p=4.4 * 10 ^-2Ohm ^-1Centimetre ^-1, σ _d=4.3 * 10 ^-2Ohm ^-1Centimetre ^-1, intensity of activation is a △ E=0.08 ev, E _Gopt=1/76 ev.The distribution of each performance is as follows on substrate plane: thickness is ± 5%, σ _p, σ _dBe ± 15%, homogeneity is gratifying.

As mentioned above, with the device of preparation deposited film shown in Figure 17, what can deposit all even satisfaction on big area mixes P a-Si: the H film.

And, because can control activated SiH independently ₄With activated PH ₃Yield, mix P a-Si so can control on request: the concentration of the phosphorus of H film with good repeatability.

And, because can control H independently ^*With activated SiH ₄Yield, so film quality just can easily be controlled to from the amorphous silicon film to the microcrystalline sillicon film on request, deposition also can be controlled on request and not reduce film quality.Though this example is to mixing P a-Si: the H film describes, and can certainly form the deposited film of other component, the P-type amorphous silicon film of boron-doping for example.

In addition, though explanation in this example is deposited film with alloy or doping impurity, also can easily form the deposited film of single composition, for example large-area uniform silicon fiml.

By under microwave action, forming discharge, activate multiple film forming unstripped gas (each is around flagpole antenna) respectively, long axis direction perpendicular to flagpole antenna transports activated film forming unstripped gas, they are introduced film formation space from a plurality of gas introduction port, each intake rectangularity or ellipse garden shape, its long axis length is more than the twice of minor axis length, intake is parallel to each other, its spacing is littler than minor axis length, activated film forming unstripped gas is mixed in film formation space and interreaction, in the device of according to a first aspect of the invention preparation deposited film, can prepare the uniform deposited film of character on big area, have the independent advantage that activates multiple film forming unstripped gas simultaneously.

In other words, can on big area, form deposited film in low price ground with uniform films performance, have the performance that to control the deposited film that forms and the advantage that when deposited film accurately is made of various ingredients, can control ratio of component simultaneously, thereby increased the selectivity of unstripped gas and expanded the scope of filming condition, this is by activating yield and the reaction that multiple film forming unstripped gas is independently controlled the activation ratio of each film forming unstripped gas and controlled each activated material independently, and send microwave to a plurality of flagpole antennas, make film forming unstripped gas around them, thereby when big electric power, in very wide scope, activate film forming unstripped gas equably, each activated film forming unstripped gas is introduced Cheng film Kong Jian And from a plurality of gas introduction port reacts and realizes, each gas introduction port is rectangle or ellipse garden shape, the length of its major axis is more than the twice of minor axis length, they are settled abreast, and the length of gap ratio minor axis is little.

And, by along the short-axis direction mobile substrate, can form the uniform deposited film of performance of length with big width and requirement.

Example 4

An example of the device of Figure 18 and 19 expressions preparation deposited film according to a second aspect of the invention.Figure 18 is the sectional view of preparation deposited film device, and Figure 19 is the figure of the part of silk among above-mentioned Figure 18.Multiple film forming unstripped gas activates with each silk, and each division plate with stainless steel or molybdenum separates, and film forming unstripped gas is not mixed mutually.And in this example, the zone that forms deposited film can enlarge on major axis (α-α ') and minor axis (β-β ') both direction, as long as place a plurality of rectangle gas release mouths along the elongation of major axis (α-α ') direction in the direction of minor axis (β-β ').

Following Example is to mix the n-type amorphous silicon film of phosphorus with the device of the preparation deposited film shown in Figure 18 and 19 deposition (P a-Si mixed in following abbreviation: the H film).

Introduce hydrogen from each gas introduction port 1811,1814,1817 and 1820 with 200Sccm, each silk 1801,1804,1807,1810 all is 20 cm long, and coil diameter is 10 millimeters, 4 circles/centimetre, they are heated separately 1800 ℃, to form activated H ₂Simultaneously, with the SiH of HD to 2 0% ₄Introduce with 150Sccm from each gas inlet tube 1812,1815 and 1818, each silk 1802,1805,1808 is 20 cm long, and coil diameter is 7 millimeters, 5 circles/centimetre, be heated to 1,600 ℃, to form activated SiH ₄Further, with HD to 2, the PH of 000ppm ₃Introduce with 80Sccm from each gas inlet tube 1813,1816 and 1819, each silk 1803,1806 and 1809 is 20 cm long, and coil diameter is 5 millimeters, and every centimetre 8 circle is heated to 1,600 ℃, to form activated PH ₃

The gas introduction port of 20 centimetres of 2 cm x that separate from division plate is introduced activated hydrogen then, introduces activated SiH from the gas introduction port of 20 centimetres of one 1.5 cm x ₄, introduce activated PH from the gas introduction port of 20 centimetres of 1 cm x ₃Enter film formation space 1824, at interior pressure is to mix under 0.7 torr, and each activated material is reacted, thereby mixes P a-Si being heated on 280 ℃ the substrate 1821 of 10 centimetres of sizes of 20 cm x deposition by infrared lamp 1823: the H film.

When using glass substrate, carried out mixing P a-Si: the evaluation of the performance of H film: thickness is 0.8 micron, and deposition was 0.4 dust/second, σ _p=4.8 * 10 ^-1Ohm ^-1Centimetre ^-1, σ _d=4.7 * 10 ^-1Ohm ^-1Centimetre ^-1, intensity of activation △ E=0.08 ev, E _Gopt=1.75 ev.And, being distributed as of each performance on substrate plane: thickness ± 2%, σ _pAnd σ _dBe ± 5%, like this, homogeneity is satisfied.

As mentioned above, with the device of the preparation deposited film shown in Figure 18 and 19, can form on big area evenly, fine is mixed P a-Si: the H film.And because can independently control activated SiH ₄With activated PH ₃Yield, can control on request with good repeatability and mix P a-Si: the concentration of phosphorus in the H film.

And, because can control activated H independently ₂With activated SiH ₄Yield, the character of film is control easily also, according to requiring, comprising can be from amorphous film to the crystallite film, deposition also can be controlled on request and not reduce film character.Though what say here is to mix P a-Si: the H film also can form the deposited film of other component, for example boron-doping P-type amorphous silicon film or alloy series amorphous silicon film.

Example 5

Figure 20 is another embodiment according to the device of the preparation deposited film of second feature of the present invention.Reference number 2001-2007 represents silk, is excited in the method for pleurodiaphragmatic in terspace material and the example 4 just the same.Preparation deposited film apparatus features is that substrate 2005 can be crooked among Figure 20, and walk around a roller, send out from roller 2017 continuously, to form deposited film, be rolled onto roller 2018 then, by it, can on big area, form deposited film continuously in Figure 19 minor axis (β-β ') direction.And because can change the one-tenth diaphragm area that filament length obtains requiring in Figure 19 major axis (α-α ') direction, this just can obtain the deposited film of desired width and length in big zone.

Device deposited amorphous SiGe film (following abbreviation a-SiGe: the example H film) with preparation deposited film shown in Figure 20 is described now.

Introduce H from each gas inlet tube 2008,2011,2014 with 250Sccm ₂, silk 2001,2004,2007 is 20 cm long, 8 millimeters of coil diameters, and every centimetre 5 circle is heated to 1,800 ℃, to form activated H ₂While Si ₂F ₆Introduce from each gas inlet tube 2009,2012 with 200Sccm, silk 2002,2005 is 20 cm long, 6 millimeters of coil diameters, and every centimetre 6 circle is heated to 1,600 ℃, to form activated Si ₂F ₆Further, the GeF that introduces with HD to 5% from each gas introduction port 2010,2013 with 100Sccm simultaneously ₄, silk 2003,2006 is 20 cm long, 4 millimeters of coil diameters, and every centimetre 8 circle is heated to 1,600 ℃, to form activated GeF ₄

Then, introduce the activated H that forms by aforesaid method from 20 centimetres of sizes of 2 cm x with the rectangle gas introduction port that division plate separates ₂, introduce activated Si from the gas introduction port of 20 centimetres of 1 cm x ₂F ₆, introduce activated GeF from the gas introduction port of 20 centimetres of 1 cm x ₄, enter film formation space 2015.They are mixed and reacting a-SiGe under interior pressure 0.4 torr then: the H film is deposited on the stainless steel substrate that moves with 5 cm per minute that is heated to 250 ℃ by infrared lamp 2019.Example as the crooked substrate 2016 of energy except that above-mentioned materials, can also use heat-resistant polyester or polyimide.Under these conditions, rotary rollers not deposits a-SiGe being heated on 250 ℃ the glass substrate: the H film, identified the performance of film to the results are shown in table 2, sample 6.Other data are illustrated in GeF ₄Flow rate and activate GeF ₄The silk temperature variation the time the result.

Table 2 is by independent control GeF ₄The activation amount prepare different light belt energy gap (E _Gopt) film, change a-SiGe simultaneously: the example of the composition of H film.Decompose Si in common passing through ₂F ₆And GeF ₄Gaseous mixture prepare in the method for deposited film, if want to prepare low E _GoptA-SiGe: H film, experience usually are to make photoconductivity (σ _p) reduce dark conductivity (σ _d) increase, the result degenerates film properties.On the other hand, in device according to the present invention, because can control activated GeF independently ₄So, can easily obtain the satisfied film of character, comprise low E _GoptThe SiGe film.

And changing activated GeF ₄Yield the time, by changing activated H ₂Yield and activated Si ₂F ₆Yield, can prepare and have same in fact E _GoptAnd the deposited film of different depositions.To sedimentary a-Si-Ge: the H film, being distributed within 3% of deposition on the substrate is at Si _XGe _1-XMiddle ratio of component x is distributed within 2%, and the conductivity is distributed within 40%.That is, can deposit 30 centimetres wide, have the uniform a-SiGe of requirement length: the H film.

As mentioned above, use the device of preparation deposited film shown in Figure 20, can on big area, form a-SiGe equably: the H film.And can be by controlling activated Si independently ₂F ₆With activated GeF ₄Yield, easily form the high-quality a-SiGe of band gap: the H film with requirement with the deposition that requires.

Though in this example to forming a-SiGe: the H film explains, also can form other deposited film that various ingredients constitutes by changing gaseous species or the like.

Example 6

An example with the device deposited amorphous carbonization silicon fiml of preparation deposited film shown in Figure 20 is described here.

Introduce hydrogen from each gas inlet tube 2008,2011,2014 with 250Sccm, silk 2001,2004,2007 is heated to 1,800 ℃ respectively, to form activated H ₂Simultaneously, introduce Si from each gas inlet tube 2009,2012 with 150Sccm ₂F ₆, silk 2002,2005 is heated to 1,600 ℃, to form activated Si ₂F ₆Further, introduce CH with 100Sccm from gas inlet tube 2010,2013 simultaneously ₄, silk 2003,2006 is heated to 1,700 ℃ to form activated CH ₄

Then, the activated H that forms by aforesaid method ₂, activated Si ₂F ₆With activated CH ₄Be incorporated into film formation space 2015 from the rectangle gas introduction port of separating with division plate, under interior pressure 0.3 torr, mix there, each activated material participates in reaction, deposits a-SiC on 280 ℃ the stainless steel substrate 2016 that moves with 4 cm per minute being heated to by infrared lamp 2019: the H film.Under similarity condition as described above, rotary rollers not, be heated on 280 ℃ the glass substrate of 20 centimetres of 20 cm x one and deposited a-SiC: the H film, the result is: deposition was 8.9 dust/seconds, E _Gopt=1.95 ev, σ _p=1.8 * 10 ^-5Ohm ^-1Centimetre ^-1, σ _d=8.3 * 10 ^-12Ohm ^-1Centimetre ^-1To sedimentary a-SiC: the H film, deposition is distributed within 3.5% Si on the substrate _XC _1-XIn the distribution of ratio of component x be ± 2%, conductivity's distribution is 50%, can form 30 centimetres wide, the uniform a-SiC of requirement length is arranged: the H film.

As mentioned above, the device of the preparation deposited film of foundation second feature of the present invention can deposit high-quality a-SiC equably on big area: the H film.And, because can control activated H independently ₂Yield, activated Si ₂F ₆Yield and activated CF ₄Yield, so by changing a-SiC: the ratio of component in the H film can deposition deposition on demand has the a-SiC of desired light belt energy gap: H film, and do not reduce the quality of film.

In previous example, be that the embodiment to doping deposited film or alloy-type deposited film makes an explanation, can certainly on big area, form the deposited film of one-component with the device of preparation deposited film of the present invention.

In device according to the preparation deposited film of second feature of the present invention, multiple film forming unstripped gas is activated respectively with elongated heater strip respectively together, each film forming unstripped gas of activated transports at the long axis direction perpendicular to silk like this, being incorporated into film formation space from a plurality of gas introduction port mixes, each gas introduction port all is rectangle or ellipse garden shape, the length of its major axis is more than the twice of minor axis length, placement is parallel to each other, spacing is less than the length than minor axis, then activated film forming unstripped gas interreaction like this.Therefore can on big area, form the uniform deposited film of performance, have the advantage that can independently activate multiple film forming unstripped gas simultaneously.

That is to say, can on big area, form the uniform deposited film of performance at an easy rate, has the performance of the deposited film that control forms simultaneously and when deposited film accurately is made of various ingredients, the advantage of control ratio of component, so just increased the selectivity of unstripped gas, enlarged the scope of filming condition, this is by activating multiple film forming unstripped gas independently, each film forming unstripped gas is controlled the activation ratio independently, control the yield and the reaction of each activated material, and transport film forming unstripped gas in direction perpendicular to the major axis of fine filaments, in very wide scope, be formed uniformly activated material with elongated shape, each activated film forming unstripped gas is incorporated into Cheng film Kong Jian And from a plurality of gas introduction port reacts and realizes, each gas introduction port is rectangle or ellipse garden shape, the length of its major axis is more than the twice of minor axis length, is arranged parallel to each other, and spacing is less than the length of minor axis.

And, can pass through along the short-axis direction mobile substrate, it is even to form performance on big area, and width is big, has the deposited film of desired length.

Example 7

Figure 21-the 23rd, the explanatory view of the basic embodiment of the device of preparation deposited film according to a third aspect of the invention we, wherein Figure 21 is that Figure 22 and 23 is explanatory views of filming chamber shown in Figure 21 inside according to the sectional view of the device of preparation deposited film of the present invention.Figure 21 is the sectional view of getting along β-β ' line among Figure 22.

Reference number 2101-2107 represents condenser coupling type radio frequency (RF) electrode respectively, and wherein RF power is distinguished independent action to contre electrode 2101-2103 from RF power source 2108-2110.Supporting electrode 2104-2107 is a ground connection.Three groups of capacitor coupling type electrodes have promptly been placed.Electrode 2101-2107 is by Al ₂O ₃Isolator 2111 insulation of doing.Isolator is filled into the edge between each electrode except along substrate direction shown in Figure 22.The film forming gas of introducing from gas inlet tube 2112-2114 is activated between 3 groups of RF electrodes independently, in film formation space 2115 interreactions, forms deposited film on substrate 2116.

Figure 22 is the structure iron of RF electrode, and substrate is in the inside of filming chamber 2117, and Figure 23 shows the relation between the gas introduction port of 3 groups of RF electrodes and the substrate of Figure 22 of seeing down from Figure 21 top.Be characterised in that according to the device of preparation deposited film of the present invention film forming gas is an activated independently between 3 groups of RF electrodes, react by introduce activated Cheng Mo Qi Ti And from gas introduction port 2301-2306, can form large-area uniform long deposited film along α-α ' direction, each gas introduction port is the rectangle cross section, along minor axis (β-β ') direction 2 cm long, along major axis (α-α ') direction 35 cm long, they are closely arranged mutually and are putting as shown in figure 23.

In this device, the distance between gas introduction port and substrate is 10 centimetres, and electrode is the SUS(aluminium alloy with nickel plating) do.Below to illustrate as example with device deposited amorphous silicon fiml of the present invention (following abbreviation a-si film).

Introduce hydrogen and argon with 200sccm and 800sccm respectively from gas inlet tube 2112,2114, the rf wave of 13.56 megahertzes by radio-frequency power supply 2108,2110 with 100 milliwatts/centimetre ²Electrode 2101,2103 in acting on, causing hydrogen and argon-mixed plasma body, activated hydrogen (below abbreviate H as ^*).Be incorporated into film formation space 2115 from rectangle gas introduction port 2301,2303,2304 and 2306.While SiF ₄Introduce from gas inlet tube 2113 with 500sccm and 200sccm respectively with Ar, the rf wave of 13.56 megahertzes by radio-frequency power supply 2109 with 80 milliwatts/centimetre ²Electrode 2102 in acting on causes SiF ₄With the plasma body of argon gas body mixture, activated SiF ₄Be incorporated into film formation space 2115 from rectangle gas introduction port 2302,2305.H ^*With activated SiF ₄Hybrid concurrency is given birth to reaction under the interior pressure of 0.4 torr in film formation space, and (be designated hereinafter simply as a-Si: the H film), its mean thickness is 1.2 microns be heated on 250 ℃ the glass substrate deposition of hydrogenated amorphous silicon fiml by well heater 2119.Deposition was 7.0 dust/seconds.And film thickness to the distribution of position on the substrate 2116 on average within ± 5%.At sedimentary a-Si: form an aluminium electrode, optical conductivity (σ with vapour deposition on the H film _p) and dark conductance (σ _d) measuring result be: σ _p=3.3 * 10 ^-5Ω ^-1Cm ^-1, σ _d=4.2 * 10 ^-11Ω ^-1Cm ^-

Specific conductivity and log σ _p, log σ _dTo the position depart from above-mentioned value ± 10% within.

The size of the substrate 2116 that uses among this embodiment is to be 30 centimetres along α-α ' direction, is 10 centimetres along β-β ' direction.All is each the gas introduction port placement adjacent to each other of 35 centimetres of 2 cm x, can as above be described in and form even fine a-Si on the big area: the H film.

The size of chip area can further increase, and particularly in α-α ' direction, area that can be by for example increasing electrode 2101-2107 or the like changes to be realized.And by controlling H independently ^*With activated SiF ₄, can easily control the quality of deposited silicon film on request, comprise from the amorphous film to the polycrystalline film.

Example 8

Following Example has shown the formation of the deposited film that contains various ingredients, has utilized according to the present invention the advantage of the device of the preparation deposited film of the 3rd characteristics simultaneously, i.e. the activation of multiple film forming gas can be controlled independently.

Figure 24 be with example 7 in the device that uses sectional view with the device of spline structure is arranged basically, be applicable to the more large-area deposited film of preparation.The sectional view that this figure gets corresponding to β-β ' line of following the usual practice in 7.

In example 7, substrate is subjected to the restriction of gas introduction port 2301-2306 along the whole length of minor axis (β-β ') direction along the size of minor axis (β-β ') direction.But in this embodiment, flexible substrate 2403 is walked around a roller, and it transmits from roller 2401 continuously, is involved in roller 2402 then, makes it also can form large-area deposited film continuously in minor axis (β-β ') direction.By increasing the area of electrode 2408,2415, in major axis (α-α ') direction, area can stably increase.Therefore, can be stably on all having the big area of the length that requires, major axis (α-α ') direction and minor axis (β-β ') direction form deposited film.

Then, to the device deposited amorphous SiGe film of Figure 24 (below abbreviate a-SiGe as: the example H film) is described.

In Figure 24,2408-2415 represents parallel-plate electrode, and each all is square as shown in figure 22, and electrode is used as SiO ₂, Al ₂O ₃Wait this clasp Y insulation Y body mutual insulating.

Introduce hydrogen and argon gas with 200sccm and 1000sccm respectively from gas inlet tube 2404,2407, rf wave power supply 2417,2420 with 120 milliwatts/centimetre ²Rf wave act on electrode 2408,2414 to cause H ₂With the plasma body of the gas mixture of Ar, thereby forming H between electrode 2408 and 2409 and between electrode 2414 and 2415 ^*Simultaneously, introduce SiF from inlet tube 2405 with 200sccm ₄, radio-frequency power supply 2418 with 100 milliwatts/centimetre ²Rf wave act on the electrode 2410, form activated SiF ₄And, be diluted to 10% GeF with Ar ₄Introduce from gas introduction port 2406 with 100sccm, radio-frequency power supply 2419 with 30 milliwatts/centimetre ²Rf wave act on the electrode 2412, form activated GeF ₄

Subsequently, the activated material that forms at activation space is introduced into film formation space 2421, i.e. activated H ₂From being the gas introduction port 2424,2427 of 30 centimetres of sizes of 2 cm x, activated SiF ₄From the gas introduction port 2425 of 30 centimetres of sizes of 1.5 cm x, and activated GeF ₄Enter from the gas introduction port 2426 of 30 centimetres of sizes of 1 cm x, they are mixed and be to react under 0.3 torr at interior pressure, deposit a-SiGe on 30 centimetres of wide stainless steel substrates 2430 that move with 2.5 centimeters/minute clock rate of 240 ℃ being heated to by infrared lamp 2422: the H film.

As the example of flexible substrate 2403, except that above-mentioned materials, can use aluminium or heat-stable polyester or polyimide.Deposit a-SiGe being heated on 240 ℃ the glass substrate of 30 centimetres of 30 cm x under these conditions: the H film, the qualification result of film properties is shown in table 3, sample 10.Other data are by changing GeF ₄Flow rate and activate GeF ₄The result that obtains of the electric power of rf wave.

Table 3 illustrates by controlling GeF independently ₄The activation amount, change a-SiGe; The component of H film prepares the film of different light belt energy gaps (Egopt).Usually passing through to use plasma decomposes SiF ₄And GeF ₄Gaseous mixture prepare in the method for deposited film because photoconductivity (6 _p) reduce dark conductivity (6 _d) increase, preparing the a-SiGe that hangs down Egopt: during the H film, often make the performance depreciation of film, obtained the film of satisfactory performance with 3 electrode methods or hydrogen dilution process.On the contrary, in device according to the present invention, can be easily by controlling GeF independently ₄Activation obtain the film of satisfactory performance, comprise SiGe film with low Egopt.

To sedimentary a-SiGe: the H film, within being distributed in of deposition on the substrate ± 3%, Si _XGe _1-XIn the distribution of ratio of component x be ± 2.5%, the distribution of electric conductivity 6 is within 50%.Promptly can deposit 30 centimetres of wide, as to have the length that requires uniform a-SiGe: the H film.

And by changing H simultaneously ^*Yield, activated SiF ₄Yield and activated GeF ₄Yield, can prepare and have same in essence Egopt, and the deposited film of different depositions.

As mentioned above, the device with preparation deposited film shown in Figure 24 can be formed uniformly the a-SiGe film on big area.And by controlling activated SiF independently ₄With activated GeF ₄Yield, can be easily form high-quality a-SiGe: the H film with desired band gap with desired deposition.

Though shown in this example is preparation a-SiGe: the H film, other deposited film with various ingredients also can be by formation such as change gaseous species.

Example 9

Explanation now be used for example 8 device deposited amorphous carbonization silicon fiml shown in Figure 24 (below abbreviate a-SiC as: the example H film).

Introduce H with 250sccm and 800sccm respectively from gas inlet tube 2404,2407 ₂And He, from rf wave power supply 2417,2420 effect 150 milliwatts/centimetre ²Rf wave in electrode 2408,2414, with between electrode 2408 and 2409, and cause H between electrode 2414 and 2415 ₂Form H with the plasma body of He gaseous mixture ^*, introduce SiF from gas inlet tube 2405 with 150sccm simultaneously ₄, radio-frequency power supply 2418 effects 120 milliwatts/centimetre ²Rf wave in electrode 2410, to form activated SiF ₄And be diluted to 10% CH with He ₄Introduce with 150sccm from gas inlet tube 2406 simultaneously, RF power supply 2419 effects 80 milliwatts/centimetre ²Rf wave in electrode 2412, to form activated CH ₄

The activated material that forms at above-mentioned activation space is promptly from the activation H of the rectangle gas inlet tube 2424,2427 that is 30 centimetres of sizes of 2 cm x ₂, from the activated SiF of the gas inlet tube 2425 of 30 centimetres of sizes of 1.5 cm x ₄With from the activated CH of the gas inlet tube 2426 of 30 centimetres of sizes of 1 cm x ₄, be introduced into film formation space 2421.They mix under interior pressure 0.35 torr and react, and a-SiC: the H film is deposited on by infrared lamp 2422 and is heated to 250 ℃, on the stainless steel substrate that moves with the speed of 2 cm per minute.

Under these conditions, a-SiC: the H film is formed on the glass substrate of 30 centimetres of 30 cm x that are heated to 250 ℃, and the qualification result of film properties is shown in table 4, sample 14.Other data are to change CH ₄Right rate and activation CH ₄The result of evaluation of rf wave electric power.

Table 4 is by controlling GeF independently ₄The activation amount, change a-SiGe thus: the component of H film prepares the example of the film of different light belt energy gaps (Egopt).Passing through to use plasma decomposes SiF ₄And GeF ₄Gaseous mixture prepare in the usual method of deposited film because photoconductivity (6 _p) reduce dark conductivity (6 _d) increase.At the a-SiGe that forms low Egept: during the H film, film properties is degenerated, and with three-electrode method or H ₂Dilution process has obtained the satisfied film of character.On the contrary, by controlling GeF independently ₄Activation, can easily obtain the satisfied film of character, comprise SiGe film with low Egept.

And by to sedimentary a-SiGe: the H film changes H simultaneously ^*Yield, activated SiF ₄Yield and activated GeF ₄Yield, can form in fact same Egopt and the different deposited film of deposition, on the substrate distribution of deposition be ± 3%, Si _XGe _1-XIn the distribution of ratio of component x be ± 2.5%, the distribution of specific conductivity 6 is within 40%.Promptly can deposit 30 centimetres of wide, as to have the length that requires even a-SiGe: the H film.

As mentioned above, the device of preparation deposited film shown in Figure 24 can prepare a-SiGe equably on big area: the H film.And, by controlling activated SiF independently ₄With activated GeF ₄Yield, can deposition on request easily prepare fine a-SiGe: the H film with desired band gap.

Example 10

Illustrate that now the device shown in Figure 24 that is used for example 8 deposits phosphorus-doped amorphous silicon fiml and (is designated hereinafter simply as and mixes p a-Si: the example H film).

Introduce H with 200sccm and 500sccm respectively from gas inlet tube 2402,2407 ₂And He, RF power supply 2427,2420 effects 100 milliwatts/centimetre ²Radio frequency power in electrode 2408,2414, between electrode 2408 and 2409, and cause H between electrode 2414 and 2415 ₂With the plasma body of He gaseous mixture, to form H ^*

Introduce SiH from gas inlet tube 2405 with 100sccm simultaneously ₄, RF power supply 2418 effects 80 milliwatts/centimetre ²Radio frequency power in electrode 2410, to form activated SiH ₄And, introduce from gas inlet tube 2406 simultaneously and use H ₂Be diluted to 2, the pH of 000ppm ₃, RF power supply 2419 effects 60 milliwatts/centimetre ²Radio frequency power in electrode 2412, to form activated pH ₃

The activated material that forms at above-mentioned activation space, that is, and from the activated H of the gas inlet tube 2424,2427 that is 30 centimetres of sizes of 2 cm x ₂, from the activated SiH of the gas inlet tube 2425 of 30 centimetres of sizes of 1.5 cm x ₄, from the activated pH of 2426 meters of the gas inlet tubes of 30 centimetres of sizes of 1 cm x ₃, be introduced into film formation space 2421 respectively.At interior pressure is to mix under 0.5 torr and reaction, is being heated to 240 ℃ with infrared lamp 2422, deposits on the stainless steel substrate 2403 that moves with the speed of 2 cm per minute and mixes p a-Si: the H film.

Under above-mentioned fully same condition, mix p a-Si being heated on 240 ℃ the glass substrate deposition: the H film, carried out the evaluation of film properties, 1.5 microns of film thickness average out to, 6.3 dust/seconds of deposition average out to, 6 _p=5.6 * 10 ^-1Ohm ^-1Centimetre ^-1, 6 _d=5.5 * 10 ^-2Ohm ^-1Centimetre ^-1, intensity of activation △ E=0.07 ev, Egopt=1.74 ev.Each performance distribute on the substrate plane as follows: thickness within ± 5%, 6 _p, 6 _dWithin ± 15%, homogeneity is satisfied.

As mentioned above, can deposit on big area evenly with the device of preparation deposited film shown in Figure 24, fine is mixed p a-Si: the H film.

And, because can control activated SiH independently ₄Yield and activated pH ₃Yield, mix p a-Si so can control on request: the phosphorus concentration in the H film with good repeatability.

And, owing to can control H independently ^*With activated SiH ₄Yield, film quality can easily be controlled on request, comprises from the amorphous silicon film to the microcrystalline sillicon film, and can control deposition on request and do not reduce film quality.Though illustrate and be to mixing p a-Si: the example of H film is done, and also can form the deposited film of other component, for example boron-doping p-type amorphous silicon film.

In the device of according to a third aspect of the invention we preparation deposited film, can be on big area the uniform deposited film of preparation property, keep activating independently the advantage of multiple film forming unstripped gas simultaneously, this is to make it to become plasma body by activate multiple film forming unstripped gas respectively with the rf electric field between each plate electrode, carrying such activated film forming unstripped gas respectively perpendicular to the direction of the rf electric field that acts on, introduce mixing from a plurality of gas introduction port, the interreaction of such activated film forming unstripped gas is realized, each intake is rectangle or ellipse garden shape, the length of its major axis is more than two times of minor axis length, placement parallel to each other, spacing is less than the length of minor axis.

That is to say, can use the uniform deposited film of processability on big area at a low price, simultaneously when deposited film accurately is made of various ingredients, have the performance of the deposited film that control forms and the advantage of ratio of component, thereby increased the selectivity of unstripped gas, enlarged the scope of filming condition, this is by activating multiple film forming unstripped gas independently, control the activation ratio of each film forming unstripped gas independently, control the yield and the reaction of each activated material, and at direction transferring raw material gas perpendicular to the rf electric field that acts on, improve the activation efficiency of film forming gas, and from a plurality of gas introduction port each activated film forming unstripped gas is introduced film formation space and react and realize, each gas introduction port is rectangle or ellipse garden shape, the length of its major axis is more than the twice of minor axis length, placement parallel to each other, and spacing is less than the length of minor axis.

And, can be formed with the uniform deposited film of performance of the big width and the length that requires by at the short-axis direction mobile substrate.

Claims (6)

1, a kind of device that on substrate, forms the functional deposited film that constitutes by various ingredients, comprise a plurality of activation chamber and a filming chamber, each of described a plurality of activation chamber all has an equipment and a decomposition energy of supplying with film forming unstripped gas to act on described film forming unstripped gas to decompose the activation film forming gas that described film forming unstripped gas forms ionic state, the described activation film forming gas of each described a plurality of activation chamber handlebar offers the equipment of described filming chamber, the described equipment that described activation film forming gas is provided forms thereon and places the near surface of the substrate on the substrate support to have gas to introduce opening at deposited film, described substrate support has heating to be contained in the equipment of the described substrate in the described filming chamber, there is the equipment of the described filming chamber of finding time in described filming chamber

It is characterized in that described a plurality of activation chamber is within described filming chamber, there is bar-shaped microwave transmitting antenna each described activation chamber, make film forming unstripped gas under the effect of the microwave of launching by described bar antenna, enter plasma state in the activation on every side of described bar antenna, the activation film forming gas of the plasma state that obtains is transporting than long axis direction perpendicular to described bar antenna, each described gas introduction port is a rectangular or ellipse garden shape, its length than major axis is its twice than minor axis length at least, the placement parallel to each other of described gas introduction port, its spacing is less than the length than minor axis.

2, according to the device of claim 1, it has the equipment that substrate is moved in the direction than major axis perpendicular to rectangular or ellipse garden shape gas introduction port.

3, a kind of device that on substrate, forms the functional deposited film that constitutes by various ingredients, comprise a plurality of activation chamber and a filming chamber, each of described a plurality of activation chamber all has the equipment of supplying with film forming unstripped gas, act on described film forming unstripped gas to decompose the activation film forming gas that described film forming unstripped gas forms plasma state with a decomposition energy, the described activation film forming gas of each described a plurality of activation chamber handlebar offers the equipment of described filming chamber, the described equipment that described activation film forming gas is provided has gas to introduce opening near deposited film forms thereon and places substrate surface on the substrate support, described substrate support has heating to be contained in the equipment of the described substrate in the described filming chamber, there is the equipment of the described filming chamber of finding time in described filming chamber

It is characterized in that described a plurality of activation chamber is within described filming chamber, the silk that each described a plurality of activation chamber has metallic substance to make, can show catalytic effect, film forming unstripped gas is activated under the heat effect that the described silk that is connected to power supply provides enter plasma state, the activation film forming gas that obtains transports in the direction than major axis perpendicular to described silk, each described gas introduction port is a rectangular or ellipse garden shape, its length than major axis is its twice than minor axis at least, the placement parallel to each other of described gas introduction port, its spacing is less than the length than minor axis.

4, according to the device of claim 3, it has makes substrate at the equipment that moves than long axis direction perpendicular to rectangular or ellipse garden shape gas introduction port.

5, a kind of device that on substrate, forms the functional deposited film that constitutes by various ingredients, comprise a plurality of activation chamber and a filming chamber, each of described a plurality of activation chamber all has an equipment and a decomposition energy of supplying with film forming unstripped gas to act on described film forming unstripped gas to decompose the activation film forming gas that described film forming unstripped gas forms plasma state, the described activation film forming gas of each described a plurality of activation chamber handlebar offers the equipment of described filming chamber, the described equipment that described activation film forming gas is provided forms thereon and places the near surface of the substrate on the substrate support to have gas to introduce opening at deposited film, described substrate support has heating to be contained in the equipment of the described substrate in the described filming chamber, there is the equipment of the described filming chamber of finding time in described filming chamber

It is characterized in that described a plurality of activation chamber is within described filming chamber, there is the pair of plate-shaped electrode each described a plurality of activation chamber, make under the effect of the rf electric field that the power supply that applies between described electrode produces, film forming unstripped gas is activated into plasma state, the activated film forming gas that obtains transports in the direction perpendicular to rf electric field, each described gas introduction port is a rectangular or ellipse garden shape, its length than major axis is the twice than minor axis length at least, the placement parallel to each other of described gas introduction port, spacing is less than the length than minor axis.

6, according to the device of claim 5, it has makes substrate at the equipment that moves than long axis direction perpendicular to rectangular or ellipse garden shape gas introduction port.

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