CN103996789A - LED integrated packaging structure and integrated packaging method thereof - Google Patents
LED integrated packaging structure and integrated packaging method thereof Download PDFInfo
- Publication number
- CN103996789A CN103996789A CN201310504524.XA CN201310504524A CN103996789A CN 103996789 A CN103996789 A CN 103996789A CN 201310504524 A CN201310504524 A CN 201310504524A CN 103996789 A CN103996789 A CN 103996789A
- Authority
- CN
- China
- Prior art keywords
- led
- concave surface
- led chip
- transmission piece
- light transmission
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
Abstract
The application provides an LED integrated packaging structure and an integrated packaging method thereof. The LED integrated packaging structure comprises a support (1), an LED chip (2), and a light-transmitting sheet (4); a recessed surface is formed at the support (1) and is used for reflecting the light emitted by the LED chip (2); the LED chip (2) is arranged in the recessed surface; and the light-transmitting sheet (4) covers the upper portion of the recessed surface.
Description
Technical field
The present invention relates to semiconductor applications, more particularly, relate to a kind of New LED structure and integrated encapsulation method thereof
Background technology
The light-source brightness of encapsulation is all higher separately at present, and the LED light source light efficiency that adopts identical chips integration packaging to go out generally declines 20.30%.By analysis, its main cause has two aspects: the one, and due to the excess Temperature that poor heat radiation causes, cause afterwards the luminous efficiency of chip to reduce; The 2nd, support leaded light problem, the amount of light of general chip comprises the summation of positive bright dipping and side bright dipping, and in some horizontal type chips, side amount of light accounts for 20.25% of total amount of light, if this part light effectively can not be taken out, the LED light source brightness after encapsulation will obviously reduce so.In integration packaging, at present support is all planar shaped, and chip also all leans on very closely, adopts after such support encapsulation, and the ambient light of chip is whole multiple reflections back and forth between chip almost, and slow consumption falls, and cannot form effective bright dipping.
In addition, in LED light source, the effect of fluorescent material is photochromic compound, forms white light.Its characteristic mainly comprises granularity, shape, luminous efficiency, conversion efficiency, stability (heat and chemistry) etc., and wherein, luminous efficiency and conversion efficiency are crucial.Research shows, along with temperature rises, fluorescent material quantum efficiency reduces, and bright dipping reduces, and radiation wavelength also can change, thereby causes the variation of white light LED color temperature, colourity, and higher temperature also can be accelerated the aging of fluorescent material.There are two problems in tradition LE0 device, the one, after mixing with silica gel, fluorescent material directly applies with on LED wafer, LED fluorescent material is near thermal source, easily cause fluorescent material bulk temperature higher, cause fluorescent material launching efficiency is reduced, therefore light efficiency is on the low side, and fluorescent material is easy to cause light decay for a long time under the environment of excess Temperature; The 2nd, fluorescent powder coated mode is that fluorescent material is mixed with casting glue, is then coated on wafer.Owing to cannot the applied thickness of fluorescent material and shape accurately being controlled, cause emergent light color inconsistent, there is inclined to one side blue light or inclined to one side gold-tinted.
Summary of the invention
The object of the present invention is to provide a kind of novel LED structure and method for packing thereof, to overcome technical problem above-mentioned.
The invention provides a kind of LED integrated encapsulation structure, comprise support, LED chip and light transmission piece, wherein on support, be formed with concave surface, this concave surface is for reflecting the light of LED chip transmitting, and described LED chip is arranged in described concave surface, and light transmission piece covers the top of concave surface.
Wherein light transmission piece is sheet glass, oozes or be applied on sheet glass outward in fluorescent material.
Wherein concave surface is bowl-type, and LED chip is arranged on the bottom of bowl-type, by wire and support conducting.
Wherein LED chip is GaN chip.
Wherein between LED chip and light transmission piece, fill with silica gel, the distance between LED chip and light transmission piece is 0.88mm.
Wherein integrated encapsulation structure is circle, ellipse, square, rectangle, triangle or rhombus.
The present invention also provides a kind of method for packing of LED integrated encapsulation structure, comprising:
On support, form concave surface, this concave surface is for reflecting the light of LED chip transmitting;
LED chip is arranged in described concave surface;
Make LED chip and support conducting;
Light transmission piece is covered to the top of concave surface.
Described method is also included between LED chip and light transmission piece injects silica gel.
Described method also comprises and will in fluorescent material, ooze or be applied in light transmission piece outward.
The present invention, by form bowl-type concave surface on support, takes out chip sides light effectively.By oozing in fluorescent material or being applied to glass surface outward, not only can improve the uniformity of fluorescent material, and can improve packaging efficiency and the photochromic consistency of product.
Accompanying drawing explanation
As illustrated in the accompanying drawings, wherein in different accompanying drawings, identical part adopts identical Reference numeral to refer to.Accompanying drawing is not necessarily pro rata, contrary, focuses on illustrating principle of the present invention and design.
Fig. 1 illustrates the LED structure of first embodiment of the invention.
Embodiment
It should be noted that, different embodiment, for exemplary explanation principle of the present invention and thought, is not only limitation of the scope of the invention.And the feature among different embodiment also can thought, is not limitation of the scope of the invention.And the feature among different embodiment also can combine to form new technical scheme mutually.
Be illustrated in figure 1 the encapsulating structure of a LED in LED integrated encapsulation structure.In this encapsulation, 1 represents support, forms the concave surface of a bowl-type on support 1, the concave surface of this bowl-type can reverberation, effectively chip sides light is taken out, one or more chips 2 are set in the concave surface of support 1, for example, chip 2 can be arranged on the bottom of concave surface.Chip 2 can be for example GaN chip, can be other any suitable LED chip certainly.Can adopt elargol and/or insulating cement chip 2 to be fixed on to the bottom of concave surface, then give chip 2 welding leads 3, make chip 2 and support 1 conducting.Wire 3 for example can be used gold thread, or other applicable plain conductor.Light transmission piece 4 covers the top of bowl-type concave surface.Light transmission piece apply below the very thin fluorescent material 5 of one deck, fluorescent material 5 also can in the mode of oozing be formed at the surface of light transmission piece 4.Light transmission piece 4 can be sheet glass, between light transmission piece 4 and chip 2, fills with silica gel 6.Light transmission piece 4 apart from chip 2 certain distances, for example, can be about 0.88mm.
The present embodiment one is used for reference the support Design form of encapsulation separately, makes the bowl of a concave surface on integrated encapsulation structure one or a core assembly sheet on support, and the indent side of support is reflected light, can well side amount of light be taken out.
As for the integrated encapsulation structure of LED chip, can be circular or oval, can be also any suitable shape of square, rectangle, triangle, rhombus etc.
In the present invention, silica gel can adopt injecting glue mode to form, and saves moding machine.
The present invention, by form bowl-type concave surface on support, takes out chip sides light effectively.By oozing in fluorescent material or being applied to glass surface outward, not only can improve the uniformity of fluorescent material, and can improve packaging efficiency and the photochromic consistency of product.
Claims (10)
1. a LED integrated encapsulation structure, it is characterized in that: comprise support (1), LED chip (2) and light transmission piece (4), wherein on support (1), be formed with concave surface, this concave surface is used for reflecting the light of LED chip (2) transmitting, described LED chip (2) is arranged in described concave surface, and light transmission piece (4) covers the top of concave surface.
2. LED integrated encapsulation structure according to claim 1, wherein light transmission piece (4) is sheet glass, fluorescent material oozes or is applied on sheet glass outward in (5).
3. LED integrated encapsulation structure according to claim 1, wherein concave surface is bowl-type, LED chip (2) is arranged on the bottom of bowl-type, by wire (3) and support 1 conducting.
4. LED integrated encapsulation structure according to claim 1, wherein LED chip (2) is GaN chip.
5. LED integrated encapsulation structure according to claim 1, wherein fills with silica gel (6) between LED chip (2) and light transmission piece (4).
6. LED integrated encapsulation structure according to claim 1, wherein the distance between LED chip (2) and light transmission piece (4) is 0.88mm.
7. LED integrated encapsulation structure according to claim 1, preferred, wherein integrated encapsulation structure is circle, ellipse, square, rectangle, triangle or rhombus.
8. a method for packing for the LED integrated encapsulation structure described in any one in claim 1-7, is characterized in that, comprising:
At the upper concave surface that forms of support (1), this concave surface is used for reflecting the light of LED chip (2) transmitting;
LED chip (2) is arranged in described concave surface;
Make LED chip (2) and support (1) conducting;
Light transmission piece (4) is covered to the top of concave surface.
9. method according to claim 8, also comprises:
Between LED chip (2) and light transmission piece (4), inject silica gel (6).
10. method according to claim 9, also comprises:
To in fluorescent material (5), ooze or be applied to outward in light transmission piece (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310504524.XA CN103996789A (en) | 2013-10-23 | 2013-10-23 | LED integrated packaging structure and integrated packaging method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310504524.XA CN103996789A (en) | 2013-10-23 | 2013-10-23 | LED integrated packaging structure and integrated packaging method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103996789A true CN103996789A (en) | 2014-08-20 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310504524.XA Pending CN103996789A (en) | 2013-10-23 | 2013-10-23 | LED integrated packaging structure and integrated packaging method thereof |
Country Status (1)
| Country | Link |
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| CN (1) | CN103996789A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1674314A (en) * | 2004-03-22 | 2005-09-28 | 斯坦雷电气株式会社 | Semiconductor light-emitting device and method of fabricating the same |
| CN201262377Y (en) * | 2008-09-02 | 2009-06-24 | 铜陵市毅远电光源有限责任公司 | White light LED with good color rendering and high illumination efficiency |
| CN101975340A (en) * | 2010-08-06 | 2011-02-16 | 敬俊 | Packaging structure of luminous semiconductor chip and packaging method thereof |
| CN102751273A (en) * | 2012-07-10 | 2012-10-24 | 贵州大学 | Structure of white LED (Light Emitting Diode) fluorescent lamp and production method of structure |
-
2013
- 2013-10-23 CN CN201310504524.XA patent/CN103996789A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1674314A (en) * | 2004-03-22 | 2005-09-28 | 斯坦雷电气株式会社 | Semiconductor light-emitting device and method of fabricating the same |
| CN201262377Y (en) * | 2008-09-02 | 2009-06-24 | 铜陵市毅远电光源有限责任公司 | White light LED with good color rendering and high illumination efficiency |
| CN101975340A (en) * | 2010-08-06 | 2011-02-16 | 敬俊 | Packaging structure of luminous semiconductor chip and packaging method thereof |
| CN102751273A (en) * | 2012-07-10 | 2012-10-24 | 贵州大学 | Structure of white LED (Light Emitting Diode) fluorescent lamp and production method of structure |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140820 |