CN103996653A - Manufacturing method for TFT deep contact hole - Google Patents
Manufacturing method for TFT deep contact hole Download PDFInfo
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- CN103996653A CN103996653A CN201410193642.8A CN201410193642A CN103996653A CN 103996653 A CN103996653 A CN 103996653A CN 201410193642 A CN201410193642 A CN 201410193642A CN 103996653 A CN103996653 A CN 103996653A
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- contact hole
- decrystallized
- tft
- insulating layer
- ito
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
Abstract
The invention discloses a manufacturing method for a TFT deep contact hole. An amorphous ITO film layer is grown on a thick insulating layer film, and pattern of a contact hole is transferred to the amorphous ITO film layer via a patterning technology. The deep contact hole is formed by the contact hole needless of frequent exposure or dry etching in the etching process of the deep contact hole, thereby saving technical cost, prolonging technical time, and obviously improving the yield rate of products due to the fact that photoresist is not required to be peeled for multiple times. The manufacturing method enables that the deep contact hole is manufactured via once etching pattern transfer and once dry etching, so that the technical and manufacturing cost is reduced; the photoresist is prevented from denaturation under the dry etching atmosphere for a long time and can be cleaned by peeling; the technology is simple, and the yield rate and takt time are improved; and thus, the TFT deep contact hole can be rapidly manufactured in a TFT array substrate in a high quality with a lower production cost.
Description
Technical field
The present invention relates to a kind of manufacture method that shows field tft array substrate, particularly relate to a kind of manufacture method of TFT contact hole, be applied to thin-film transistor preparing technical field.
Background technology
The English full name of thin-film transistor is Thin Film Transistor, is abbreviated as TFT.
Referring to Fig. 1, in traditional tft array substrate, the manufacture method of the dark contact hole of TFT is as follows:
One, first that the base-plate cleaning after the insulating layer film of PECVD deposition is clean, and on this substrate surface, be coated with positive photoresist and front baking, utilize graphical branch mode that the positive photoresist of coating is exposed, developed and dries afterwards, produce the contact hole graph of carrying out in advance dry etching; Two, the insulating layer film of PECVD deposition on this substrate is done and carved processing, for guaranteeing that the photoresist after each dry carving technology finishes can be completely removed totally, control the dry carving technology time, after follow-up N time is repeated dry carving technology, whole insulating layer film can be by etching is clean completely; Three, peel off substrate photomask surface glue; Four, repeat rapid one, two, three processing step N time, until dry carving technology finishes.So far, the dark contact hole manufacturing process of the tft array substrate of this method finishes.
In traditional tft array substrate, the manufacture method of the dark contact hole of TFT is by repeatedly photolithography patterning shifts, repeatedly dry etching carries out, manufacture craft is comparatively complicated, production is affected, conforming product rate is not high, technique manufacturing cost is higher, for dry the quarter because proterties occurs the photoresist adopting for a long time under the effect of doing atmosphere at quarter of dark contact hole graph, change, adopt traditional demoulding mode totally to cause photoresist residual its thorough removal, therefore tradition selects the mode of step etching to carry out dry etching to dark contact hole graph.
Summary of the invention
In order to solve prior art problem, the object of the invention is to overcome the deficiency that prior art exists, the dark contact hole manufacture method of a kind of TFT is provided, this technique, by first carrying out the decrystallized ITO rete of normal temperature processes one time after the insulating layer film in PECVD deposition, carves thereby dark contact hole is done the dry carving technology that only can realize dark contact hole through a photolithography patterning transfer, a dry etch process.
For reaching foregoing invention, create object, the present invention adopts following technical proposals:
The dark contact hole manufacture method of TFT, comprises the steps:
A. on the TFT of cleaning substrate, utilize pecvd process deposition one deck insulating layer film, the thickness of insulating layer film can be accepted the thickness that thickness is thicker according to process requirements deposition rate conventional dry carving technology;
B. on the insulating layer film of preparing in above-mentioned steps a, with the decrystallized ITO rete of magnetically controlled sputter method growth one deck, make the thickness of decrystallized ITO rete be less than the thickness of the insulating layer film of preparing in above-mentioned steps a;
C. by litho pattern metallization processes, contact hole graph is transferred on decrystallized ITO rete, then according to the corresponding execution wet etching of the contact hole graph region shape on decrystallized ITO rete, utilize ITO etching liquid to carry out etching to decrystallized ITO rete, on decrystallized ITO rete, form contact hole graph, make the insulating layer film of contact hole bottom out exposed, and utilize stripper to peel off the photoresist on decrystallized ITO film surface, the decrystallized ITO rete with contact hole is revealed; As preferred process means, when carrying out graphical technique on decrystallized ITO film surface, first on decrystallized ITO rete, be coated with one deck photoresist coating, through photoetching, development, baking, form the photoetching offset plate figure with contact hole again, make the decrystallized ITO rete of contact hole bottom out exposed, complete contact hole graph is transferred to the process engineering on decrystallized ITO rete;
D. using the decrystallized ITO rete with contact hole the prepared dry etching barrier layer as insulating layer film in above-mentioned steps c, by contact hole, insulating layer film is carried out to dry etching, until form dark contact hole, make the TFT substrate surface of dark contact hole bottom out exposed;
E. again utilize ITO etching liquid to etch away decrystallized ITO rete, the insulating layer film with dark contact hole is revealed, thereby complete the dark contact hole manufacture process of TFT.
As the preferred technical scheme of the present invention, in above-mentioned steps a, insulating layer film preferably adopts SiOx insulating layer film; In above-mentioned steps d, while preferably SiOx insulating layer film being carried out to dry etching, under CF4 atmosphere, implement dry carving technology.
As the optimal technical scheme of technique scheme, in above-mentioned steps c and step e, all adopt oxalic acid etching liquid at normal temperatures decrystallized ITO rete to be carried out to etching.
The present invention compared with prior art, has following apparent outstanding substantive distinguishing features and remarkable advantage:
The present invention adopts decrystallized ITO coating growth on heavy insulation tunic, utilize graphical technique that contact hole graph is shifted so far on decrystallized ITO rete, in dark contact hole dry carving technology process, the phenomenon that makes photoresist sex change under dry etching atmosphere for a long time and cannot peel off can be avoided, therefore in dark contact hole etching process without multiexposure, multiple exposure, dryly carve contact hole and form dark contact hole, process costs and lifting process time have been saved on the one hand, due to without stripping photoresist repeatedly, can obviously improve the yield of product on the other hand.The present invention is by the decrystallized ITO rete of first sputter normal temperature on the insulating layer film in PECVD deposition and carry out graphical processes, dark contact hole manufacturing process only can be realized by a photolithography patterning transfer, a dry etching, save technique manufacturing cost; Also without consideration photoresist, doing sex change under the effect of carving atmosphere, cannot shell for a long time anti-clean simultaneously, manufacture craft is simple, improve yield and the productive temp of producing, manufacture craft of the present invention is simple, can effectively improve productive temp, under the condition of lower production cost, realize the quick and high-quality manufacture of the dark contact hole of TFT in tft array substrate.
Accompanying drawing explanation
Fig. 1 is the dark contact hole manufacturing process flow of traditional TFT block diagram.
Fig. 2 is the dark contact hole manufacturing process flow of preferred embodiment of the present invention TFT block diagram.
Fig. 3 is the TFT board structure schematic diagram that the preferred embodiment of the present invention adopts in the dark contact hole manufacturing process of TFT.
Fig. 4 is the TFT process structure schematic diagram of preferred embodiment of the present invention depositing insulating layer film in the dark contact hole manufacturing process of TFT.
Fig. 5 is grow in the dark contact hole manufacturing process of the TFT TFT process structure schematic diagram of decrystallized ITO rete of the preferred embodiment of the present invention.
Fig. 6 is the TFT process structure schematic diagram of preferred embodiment of the present invention photolithography patterning in the dark contact hole manufacturing process of TFT.
Fig. 7 is that the preferred embodiment of the present invention presents the TFT process structure schematic diagram of decrystallized ITO rete in the dark contact hole manufacturing process of TFT.
Fig. 8 is that the preferred embodiment of the present invention is made the TFT process structure schematic diagram of dark contact hole in the dark contact hole manufacturing process of TFT.
Fig. 9 is that the preferred embodiment of the present invention presents the TFT process structure schematic diagram of the insulating layer film with dark contact hole in the dark contact hole manufacturing process of TFT.
Embodiment
Details are as follows for the preferred embodiments of the present invention:
In the present embodiment, referring to Fig. 2～Fig. 9, the dark contact hole manufacture method of TFT, comprises the steps:
A. on the TFT of cleaning substrate 10, utilize the SiOx insulating layer film 20 that pecvd process deposition a layer thickness is 5000, referring to Fig. 3 and Fig. 4;
B. on the SiOx insulating layer film 20 of preparing in above-mentioned steps a, by the magnetically controlled sputter method a layer thickness of growing at low temperatures, be 300 decrystallized ITO rete 30, referring to Fig. 5;
C. by litho pattern metallization processes, first on decrystallized ITO rete 30, be coated with one deck photoresist 40, pass through again photoetching, develop, baking forms the photoetching offset plate figure with contact hole, make the decrystallized ITO rete 30 of contact hole bottom out exposed, complete contact hole graph is transferred to the process engineering on decrystallized ITO rete 30, contact hole graph is transferred on decrystallized ITO rete 30, then according to the corresponding execution wet etching of the contact hole graph region shape on decrystallized ITO rete 30, utilize at normal temperatures oxalic acid etching liquid to carry out etching to decrystallized ITO rete 30, etch period is 20 seconds, on decrystallized ITO rete 30, form contact hole graph 31, make the insulating layer film 20 of contact hole bottom out exposed, and be under 60 ℃ of conditions in temperature, utilize stripper to peel off and remove the lip-deep photoresist 40 of decrystallized ITO rete 30, the decrystallized ITO rete 30 with contact hole is revealed, referring to Fig. 6 and Fig. 7,
D. using the decrystallized ITO rete 30 with contact hole the prepared dry etching barrier layer as SiOx insulating layer film 20 in above-mentioned steps c, under CF4 atmosphere, by contact hole, SiOx insulating layer film 20 is carried out to dry etching, etch period is 350 seconds, until the complete etching of the SiOx of contact hole place is formed to the dark contact hole 50 of TFT, make TFT substrate 10 surface exposures of dark contact hole 50 bottoms out, referring to Fig. 8;
E. at normal temperatures, again utilize oxalic acid etching liquid etching to remove decrystallized ITO rete 30, the SiOx insulating layer film 20 with dark contact hole 50 is revealed, thereby complete dark contact hole 50 manufacture processes of TFT, referring to Fig. 9.
Referring to Fig. 2, the dark contact hole manufacture method of the present embodiment TFT, on the heavy insulation tunic in PECVD deposition, utilize the decrystallized ITO rete of magnetron sputtering machine normal temperature sputter one deck, by litho pattern metallization processes, contact hole graph is shifted so far on decrystallized ITO rete, and row etching during to ITO rete, peel off and remove surperficial photoresist, and using this layer of decrystallized ITO rete as dry etching barrier layer, thereby realize the disposable etching of dark contact hole dry etch process, save technique manufacturing cost; Meanwhile, can avoid photoresist in for a long time sex change and cannot peeling off under effect of dry etching atmosphere.The present embodiment is optimized the dark contact hole manufacture method of traditional TFT, by the decrystallized ITO rete of first sputter normal temperature on the insulating layer film of PECVD deposition and carry out graphical processes, dark contact hole manufacturing process only can be realized by a photolithography patterning transfer, a dry etching, save technique manufacturing cost; Also without consideration photoresist, doing sex change under the effect of carving atmosphere, cannot shell and prevent that totally manufacture craft is simple for a long time simultaneously, yield and the productive temp of raising production.
By reference to the accompanying drawings the embodiment of the present invention is illustrated above; but the invention is not restricted to above-described embodiment; can also make multiple variation according to the object of innovation and creation of the present invention; the change of making under all Spirit Essences according to technical solution of the present invention and principle, modification, substitute, combination, simplify; all should be equivalent substitute mode; as long as goal of the invention according to the invention; only otherwise deviate from know-why and the inventive concept of the dark contact hole manufacture method of TFT of the present invention, all belong to protection scope of the present invention.
Claims (5)
1. the dark contact hole manufacture method of TFT, is characterized in that, comprises the steps:
A. on the TFT of cleaning substrate, utilize pecvd process deposition thick layer insulating layer film, the thickness of insulating layer film can accept according to process requirements deposition rate conventional dry carving technology the thickness that thickness is thicker;
B. on the insulating layer film of preparing in above-mentioned steps a, with the decrystallized ITO rete of magnetically controlled sputter method growth one deck, make the thickness of decrystallized ITO rete be less than the thickness of the insulating layer film of preparing in above-mentioned steps a;
C. by litho pattern metallization processes, contact hole graph is transferred on decrystallized ITO rete, then according to the corresponding execution wet etching of the contact hole graph region shape on decrystallized ITO rete, utilize ITO etching liquid to carry out etching to decrystallized ITO rete, on decrystallized ITO rete, form contact hole graph, make the insulating layer film of contact hole bottom out exposed, and utilize stripper to peel off the photoresist on decrystallized ITO film surface, the decrystallized ITO rete with contact hole is revealed;
D. using the decrystallized ITO rete with contact hole the prepared dry etching barrier layer as insulating barrier in above-mentioned steps c, by contact hole, insulating layer film is carried out to dry etching, until form dark contact hole, make the TFT substrate surface of dark contact hole bottom out exposed;
E. again utilize ITO etching liquid to etch away decrystallized ITO rete, the insulating layer film with dark contact hole is revealed, thereby complete the dark contact hole manufacture process of TFT.
2. the dark contact hole manufacture method of TFT according to claim 1, it is characterized in that: in above-mentioned steps c, when carrying out graphical technique on decrystallized ITO film surface, first on decrystallized ITO rete, be coated with one deck photoresist coating, through photoetching, development, baking, form the photoetching offset plate figure with contact hole again, make the decrystallized ITO rete of contact hole bottom out exposed, complete contact hole graph is transferred to the process engineering on decrystallized ITO rete.
3. according to the dark contact hole manufacture method of TFT described in claim 1 or 2, it is characterized in that: in above-mentioned steps a, insulating layer film is SiOx insulating layer film.
4. the dark contact hole manufacture method of TFT according to claim 3, is characterized in that: in above-mentioned steps d, when SiOx insulating layer film is carried out to dry etching, under CF4 atmosphere, implement dry carving technology.
5. according to the dark contact hole manufacture method of TFT described in claim 1 or 2, it is characterized in that: in above-mentioned steps c and step e, all adopt oxalic acid etching liquid at normal temperatures decrystallized ITO rete to be carried out to etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201410193642.8A CN103996653B (en) | 2014-05-09 | 2014-05-09 | TFT deep contact hole manufacture method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410193642.8A CN103996653B (en) | 2014-05-09 | 2014-05-09 | TFT deep contact hole manufacture method |
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| CN103996653A true CN103996653A (en) | 2014-08-20 |
| CN103996653B CN103996653B (en) | 2017-01-04 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110634795A (en) * | 2019-10-23 | 2019-12-31 | 京东方科技集团股份有限公司 | Preparation method of array substrate, array substrate and display device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6204081B1 (en) * | 1999-05-20 | 2001-03-20 | Lg Lcd, Inc. | Method for manufacturing a substrate of a liquid crystal display device |
| TW508784B (en) * | 2000-04-25 | 2002-11-01 | Hitachi Ltd | Method of manufacturing a semiconductor device and a semiconductor device |
| US20080064199A1 (en) * | 2006-09-12 | 2008-03-13 | Wan Jae Park | Methods of Forming Electrical Interconnect Structures Using Polymer Residues to Increase Etching Selectivity Through Dielectric Layers |
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2014
- 2014-05-09 CN CN201410193642.8A patent/CN103996653B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6204081B1 (en) * | 1999-05-20 | 2001-03-20 | Lg Lcd, Inc. | Method for manufacturing a substrate of a liquid crystal display device |
| TW508784B (en) * | 2000-04-25 | 2002-11-01 | Hitachi Ltd | Method of manufacturing a semiconductor device and a semiconductor device |
| US20080064199A1 (en) * | 2006-09-12 | 2008-03-13 | Wan Jae Park | Methods of Forming Electrical Interconnect Structures Using Polymer Residues to Increase Etching Selectivity Through Dielectric Layers |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110634795A (en) * | 2019-10-23 | 2019-12-31 | 京东方科技集团股份有限公司 | Preparation method of array substrate, array substrate and display device |
| US11631705B2 (en) | 2019-10-23 | 2023-04-18 | Boe Technology Group Co., Ltd. | Method of manufacturing display substrate, display substrate and display panel |
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| CN103996653B (en) | 2017-01-04 |
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