CN103985790A - Glue sealing technology for solar photovoltaic cell panel - Google Patents
Glue sealing technology for solar photovoltaic cell panel Download PDFInfo
- Publication number
- CN103985790A CN103985790A CN201410243314.4A CN201410243314A CN103985790A CN 103985790 A CN103985790 A CN 103985790A CN 201410243314 A CN201410243314 A CN 201410243314A CN 103985790 A CN103985790 A CN 103985790A
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- Prior art keywords
- glue
- coated
- photovoltaic cell
- solar photovoltaic
- cell panel
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- Granted
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- 239000003292 glue Substances 0.000 title claims abstract description 100
- 238000005516 engineering process Methods 0.000 title abstract description 9
- 238000007789 sealing Methods 0.000 title abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 45
- 239000010703 silicon Substances 0.000 claims abstract description 45
- 238000000576 coating method Methods 0.000 claims abstract description 19
- 239000011248 coating agent Substances 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 11
- 238000001035 drying Methods 0.000 claims abstract description 9
- 239000004568 cement Substances 0.000 claims description 45
- 239000013078 crystal Substances 0.000 claims description 40
- 239000010454 slate Substances 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 23
- 238000005470 impregnation Methods 0.000 claims description 19
- 239000012945 sealing adhesive Substances 0.000 claims description 15
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 claims description 10
- 229920002574 CR-39 Polymers 0.000 claims description 8
- 238000003466 welding Methods 0.000 claims description 7
- 229910015900 BF3 Inorganic materials 0.000 claims description 5
- 150000001409 amidines Chemical class 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 238000012545 processing Methods 0.000 abstract description 5
- 238000002834 transmittance Methods 0.000 abstract description 4
- 238000005265 energy consumption Methods 0.000 abstract description 3
- 230000007547 defect Effects 0.000 abstract description 2
- 238000002156 mixing Methods 0.000 abstract description 2
- 210000004027 cell Anatomy 0.000 description 13
- 239000000084 colloidal system Substances 0.000 description 7
- 238000004026 adhesive bonding Methods 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 210000003850 cellular structure Anatomy 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sealing Material Composition (AREA)
Abstract
The invention belongs to the technical field of semi-finished solar photovoltaic cell assembly processing, and particularly relates to a glue sealing technology for a solar photovoltaic cell panel. The glue sealing technology includes the steps of selecting glue A, glue B and glue C to carry out glue mixing to obtain mixed glue, coating a base material with the glue to obtain base glue, immediately and orderly placing silicon crystalline plates which are welded in series on the surface of the base glue, continuously carrying out coating, and drying the glue on the silicon crystalline plates. By means of the glue sealing technology, due to the fact that the glue A, the glue B and the glue C are sufficiently stirred to be transparent, the light transmittance after the surfaces of the silicon crystalline plates are coated with the glue can be guaranteed, and the photovoltaic conversion efficiency of the silicon crystalline plates serving as photovoltaic conversion elements is easily improved; a multi-step procuring coating mode is adopted for the glue coating technology, the vacuumizing technology is replaced, energy consumption is reduced, and the defect that bubbles can not be eliminated through vacuumizing is overcome; the glue drying time is shortened to be several tenths of the glue drying time of the prior art, and the product processing efficiency is easily improved.
Description
Technical field
The invention belongs to the semi-finished product processing technique field of solar photovoltaic battery component, be specifically related to a kind of sealing adhesive process of solar photovoltaic cell panel.
Background technology
Solar energy is the inexhaustible clean energy resource of nature, and in recent years, the utilization of opto-electronic conversion solar energy has obtained significant progress, and technology is constantly progressive, and market is constantly opened up.Because the photoelectric conversion efficiency of silicon solar cell is high compared with the solar cell of other kind, thereby development rapidly.
As the green replacement scheme of traditional production method of electric energy, photovoltaic cell component is used to utilize sunlight to produce electric energy.Photovoltaic cell component is to be formed by various semiconductor element system assembles, thereby must be protected to alleviate environmental activity as moisture, oxygen and ultraviolet impact and destruction.
Solar photovoltaic cell panel refers to silicon crystal slate, and silicon crystal slate can be monocrystalline silicon plate, can be also polysilicon films, belongs to photo-electric conversion element.The mode of processing for the Surface Machining of silicon crystal slate at present mainly contains following two kinds, a kind of is to protect the surface at silicon crystal slate with solar energy glass cover-plate lid, because can fully seeing through sunlight, solar energy glass is beneficial to silicon crystal slate absorption solar energy, and with the intensity of himself, be extremely beneficial to protection its below silicon crystal slate avoid extraneous factor as hail, snow, snow pearl, the damage of dust storm etc., therefore the cover-plate glass of solar photovoltaic battery component can be applicable to the monocrystalline silicon of all size, polycrystalline solar module and power station intelligent control system, Intelligent photovoltaic water pump system, wind-light complementary system, military digitlization photo-voltaic power supply, photovoltaic communication signal system, multifuctional solar user power supply and anti-low temperature high brightness solar energy garden lamp, Lawn lamp, the reason place of traffic lights etc., another kind is that sealing is carried out on the surface that is silicon crystal slate to solar photovoltaic cell panel, the effect of sealing is life-span in order to protect cell panel equally, meet light transmittance, outward appearance and avoid artificial or naturally factor cause the damage of cell panel.
Although to the sealing adhesive process of solar photovoltaic cell panel uncomplicated, can be divided into by technological process: gluing (comprise and select glue, impregnation) and vacuumizing and mummification,, the technical problem that current industry runs into is more.For example: the transparency that is applied to the glue on silicon crystal slate is difficult to reach gratifying degree, and the quality of transparency is directly connected to the light energy use efficiency height of silicon crystal slate, and the gummosis in gluing step is also difficult to control.Cause the reason of poor transparency and stream (dropping down) glue to be mainly present in gluing choosing, impregnation link and coating technique before, if impregnation is not rigorous, can cause that glue does not solidify or colloid is softer, lack tension force, thereby certainly will there is gummosis, glue due to the sealing as for silicon crystal slate adopts A, B glue conventionally again, the main composition of A glue is epoxy resin, and B glue is curing agent, some key element for the mediation of A, B glue or in claiming to stir as the operating environment temperature of blending degree (viscosity), impregnation be all very important key factor.Also as: by the evacuation process of commonly using at present, be difficult to the micro air bubble in glue-line (body) fully to take out to the greatest extent, and the existence of bubble can make the surface quality of silicon crystal slate be had a strong impact on, even form between glue-line and silicon crystal slate, occur micro-de-.And for example: for mummification, be that the silicon crystal slate after sealing is placed in to baking oven at present, it is 30 ℃ of left and right that oven temperature is controlled, time is 7-8h, the advantage of this method can energy savings and is embodied the advantage that processing cost is low, but because oven temperature is almost close to the natural temperature in summer, not only drying time is long, and more fatal weakness is cannot form perfect marriage relation between glue-line and silicon crystal slate, both divide de-rate higher, install, vibration ability in the links such as transportation is very fragile, and for example the curing hardness of epoxy resin is inadequate, the wearing and tearing of long-time experience dust storm there will be obvious cut, comprise while installing with clean and maintenance and keep away unavoidably and can produce cut to colloid surface, reduce photoelectricity luminous efficiency.Though Chinese patent Granted publication 103635314A discloses light-transmissive resin sealed solar module and preparation method thereof, unexposed have a referential above-mentioned technology enlightenment to the existing defect of silicon crystal slate surface sealing of mentioning that overcome.
Summary of the invention
The object of this invention is to provide a kind of sealing adhesive process of solar photovoltaic cell panel, scientific and reasonable, reduced energy consumption, shortened the production cycle, improved the working (machining) efficiency of product.
The sealing adhesive process of solar photovoltaic cell panel of the present invention, step is as follows:
(1) choose A glue, B glue and C glue and carry out impregnation, obtain rubber cement;
(2) rubber cement is applied on base material, is coated with after one deck rubber cement at every turn, at the 45-55 ℃ of standing 30-40s of air-flow environment, be again coated with, be repeatedly coated with 35-45 time, be coated with rubber cement THICKNESS CONTROL at 0.024-0.026mm at every turn, obtain base glue;
(3) silicon crystal slate immediately welding being connected is neatly placed in base glue surface, continue coating, be coated with after one deck rubber cement at every turn, at the 45-55 ℃ of standing 30-40s of air-flow environment, be again coated with, repeatedly be coated with 35-45 time, be coated with rubber cement THICKNESS CONTROL at 0.024-0.026mm at every turn;
(4) rubber cement on silicon crystal slate is carried out to mummification.
A glue described in step (1) is allyl diglycol carbonates.
B glue described in step (1) is boron trifluoride.
C glue described in step (1) is dicyclo amidine.
A glue described in step (1) is that 2 parts, B glue are that 1 part, C glue are 1 part, in parts by weight.
Impregnation temperature described in step (1) is 20-35 ℃, preferably 20-30 ℃.
Impregnation described in step (1) is that 1 part, 2 parts, A glue by weight, 1 part, B glue, C glue is fully stirred to after the degree that homogeneous transparent sees the bottom standby.
Base material described in step (2) is a kind of in PVC, ceramic tile or outer wall board for building.
The coating total amount that is applied to substrate surface described in step (2) is 0.8-1.0g/cm
2.
Silicon crystal slate described in step (3) is put and is neatly close to glue-line gapless, and the coating total amount that is applied to silicon crystal slate surface is 0.8-1.0g/cm
2.Silicon crystal slate is put and is neatly close to glue-line gapless and refers to through step 2) after silicon crystal slate is placed in to the glue surface of not yet precuring, the adhesiveness by glue fixedly silicon crystal slate is close to seamless.
Mummification temperature described in step (3) is 60-75 ℃, and drying time is 20-25 minute.
Described 45-55 ℃ of air-flow environment refers to 45-55 ℃ of precuring the temperature inside the box and Air Flow circulation.
The sealing adhesive process of solar photovoltaic cell panel of the present invention, concrete steps are as follows:
(1) choose the A glue of allyl diglycol carbonates, as the B glue of curing agent with as the C glue of promoter, selected A, B, C glue are carried out to impregnation by weight, obtain rubber cement;
(2) first the rubber cement after modulation is applied on smooth base material, is coated with rubber cement THICKNESS CONTROL at 0.024-0.026mm at every turn, after the 45-55 ℃ of standing 30-40s of air-flow environment, coating again, is coated with 35-45 time repeatedly, obtains base glue;
(3) silicon crystal slate immediately welding being connected is neatly placed in base glue surface, rubber cement is applied to base glue and silicon crystal slate surface, silicon crystal slate size is less than base glue size, after each coating one deck rubber cement, at the 45-55 ℃ of standing 30-40s of air-flow environment, be again coated with, repeatedly be coated with 35-45 time, be coated with rubber cement THICKNESS CONTROL at 0.024-0.026mm at every turn;
(4) rubber cement on silicon crystal slate is carried out to mummification.
Due to the optical-electrical converter of silicon crystal slate as solar photovoltaic battery component, the material therefore its surface being covered must be very exquisite.Generally select that transparency is high, smell is less and have the stronger sizing material that can tolerate extraneous natural damage ability, because the height of transparency directly involves the photoelectric conversion efficiency of silicon crystal slate, and the ability power that tolerates extraneous natural impairment factor is to the useful life of closing whole solar-energy photo-voltaic cell.At present sealing adhesive process glue used is normally usingd A glue that main composition is epoxy resin and as the B glue of curing agent, both carry out impregnation in proportion, both ratios are selected must be rationally, otherwise can produce do not solidify or colloid too soft, cause and drip (dropping down) glue phenomenon, the A glue that the present invention adopts is allyl diglycol carbonates, and B glue is curing agent, and C glue is promoter.Gluing is that the rubber cement after modulation is coated to surface after completing electrode welding technique and that adhere to the silicon crystal slate on base plate.To glue coating process application multi-step precuring coating method, object is to remove in impregnation process to produce bubble, and in colloid, residue gas is steeped oneself-meeting and caused optoelectronic transformation efficiency to reduce.Mummification is oven dry, being coated on rubber cement on silicon crystal slate, solidifies, and preferred oven temperature 65-75 ℃, time are 20-25 minute.In addition,, because air humidity also can form the impact on colloid, if therefore air humidity is too high, the surface of colloid there will be alabastrine spot, so as much as possible air humidity is remained in 55%.
The present invention compared with prior art, has following beneficial effect:
The present invention is owing to A, B, C glue fully being stirred and reaching transparent degree, thereby can ensure the light transmittance being applied to behind silicon crystal slate surface, very favourable to improving as the photoelectric conversion efficiency of the silicon crystal slate of photo-electric conversion element; Owing to having developed the rational proportion of allyl diglycol carbonates, hardness and light transmittance after colloid solidifies all can be compared with glass properties, due to the ambient temperature of impregnation and coating (glue) has been done to rational selection, can avoid dripping the generation of (dropping down) glue phenomenon; To glue coating process application multi-step precuring coating method, replaced evacuation process, reduced energy consumption, solved and vacuumized the deficiency that cannot complete removal bubble; The time of rubber cement mummification, compared with tens times of prior art shortenings, is conducive to improve the working (machining) efficiency of product nearly.
Embodiment
Below in conjunction with embodiment, the present invention is described further.
Embodiment 1
(1) choose A glue allyl diglycol carbonates, B glue boron trifluoride and C glue dicyclo amidine and carry out impregnation, A glue is that 2kg, B glue are that 1kg, C glue are 1kg, and impregnation temperature is 20 ℃, obtains rubber cement;
(2) rubber cement is applied on base material, is coated with after one deck rubber cement at every turn, at 55 ℃ of standing 30s of air-flow environment, be again coated with, be repeatedly coated with 40 times, be coated with rubber cement THICKNESS CONTROL at 0.025mm at every turn, obtain base glue;
(3) silicon crystal slate immediately welding being connected is neatly placed in base glue surface, continues coating, is coated with after one deck rubber cement at every turn, at 55 ℃ of standing 30s of air-flow environment, is again coated with, and is repeatedly coated with 40 times, is coated with rubber cement THICKNESS CONTROL at 0.025mm at every turn;
(4) rubber cement on silicon crystal slate is carried out to mummification, mummification temperature is 60 ℃, and drying time is 25 minutes.
Embodiment 2
(1) choose A glue allyl diglycol carbonates, B glue boron trifluoride and C glue dicyclo amidine and carry out impregnation, A glue is that 3kg, B glue are that 1.5kg, C glue are 1.5kg, and impregnation temperature is 35 ℃, obtains rubber cement;
(2) rubber cement is applied on base material, is coated with after one deck rubber cement at every turn, at 45 ℃ of standing 40s of air-flow environment, be again coated with, be repeatedly coated with 35 times, be coated with rubber cement THICKNESS CONTROL at 0.026mm at every turn, obtain base glue;
(3) silicon crystal slate immediately welding being connected is neatly placed in base glue surface, continues coating, is coated with after one deck rubber cement at every turn, at 45 ℃ of standing 40s of air-flow environment, is again coated with, and is repeatedly coated with 35 times, is coated with rubber cement THICKNESS CONTROL at 0.026mm at every turn;
(4) rubber cement on silicon crystal slate is carried out to mummification, mummification temperature is 70 ℃, and drying time is 23 minutes.
Embodiment 3
(1) choose A glue allyl diglycol carbonates, B glue boron trifluoride and C glue dicyclo amidine and carry out impregnation, A glue is that 4kg, B glue are that 2kg, C glue are 2kg, and impregnation temperature is 30 ℃, obtains rubber cement;
(2) rubber cement is applied on base material, is coated with after one deck rubber cement at every turn, at 50 ℃ of standing 35s of air-flow environment, be again coated with, be repeatedly coated with 45 times, be coated with rubber cement THICKNESS CONTROL at 0.024mm at every turn, obtain base glue;
(3) silicon crystal slate immediately welding being connected is neatly placed in base glue surface, continues coating, is coated with after one deck rubber cement at every turn, at 50 ℃ of standing 35s of air-flow environment, is again coated with, and is repeatedly coated with 45 times, is coated with rubber cement THICKNESS CONTROL at 0.024mm at every turn;
(4) rubber cement on silicon crystal slate is carried out to mummification, mummification temperature is 75 ℃, and drying time is 20 minutes.
Claims (8)
1. a sealing adhesive process for solar photovoltaic cell panel, is characterized in that step is as follows:
(1) choose A glue, B glue and C glue and carry out impregnation, obtain rubber cement;
(2) rubber cement is applied on base material, is coated with after one deck rubber cement at every turn, at the 45-55 ℃ of standing 30-40s of air-flow environment, be again coated with, be repeatedly coated with 35-45 time, be coated with rubber cement THICKNESS CONTROL at 0.024-0.026mm at every turn, obtain base glue;
(3) silicon crystal slate immediately welding being connected is neatly placed in base glue surface, continue coating, be coated with after one deck rubber cement at every turn, at the 45-55 ℃ of standing 30-40s of air-flow environment, be again coated with, repeatedly be coated with 35-45 time, be coated with rubber cement THICKNESS CONTROL at 0.024-0.026mm at every turn;
(4) rubber cement on silicon crystal slate is carried out to mummification.
2. the sealing adhesive process of solar photovoltaic cell panel according to claim 1, is characterized in that the A glue described in step (1) is allyl diglycol carbonates.
3. the sealing adhesive process of solar photovoltaic cell panel according to claim 1, is characterized in that the B glue described in step (1) is boron trifluoride.
4. the sealing adhesive process of solar photovoltaic cell panel according to claim 1, is characterized in that the C glue described in step (1) is dicyclo amidine.
5. the sealing adhesive process of solar photovoltaic cell panel according to claim 1, is characterized in that the A glue described in step (1) is that 2 parts, B glue are that 1 part, C glue are 1 part, in parts by weight.
6. the sealing adhesive process of solar photovoltaic cell panel according to claim 1, is characterized in that the impregnation temperature described in step (1) is 20-35 ℃.
7. the sealing adhesive process of solar photovoltaic cell panel according to claim 1, is characterized in that the base material described in step (2) is a kind of in PVC, ceramic tile or outer wall board for building.
8. the sealing adhesive process of solar photovoltaic cell panel according to claim 1, is characterized in that the mummification temperature described in step (3) is 60-75 ℃, and drying time is 20-25 minute.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410243314.4A CN103985790B (en) | 2014-06-03 | 2014-06-03 | The sealing adhesive process of solar photovoltaic cell panel |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410243314.4A CN103985790B (en) | 2014-06-03 | 2014-06-03 | The sealing adhesive process of solar photovoltaic cell panel |
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| Publication Number | Publication Date |
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| CN103985790A true CN103985790A (en) | 2014-08-13 |
| CN103985790B CN103985790B (en) | 2016-05-25 |
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| CN201410243314.4A Expired - Fee Related CN103985790B (en) | 2014-06-03 | 2014-06-03 | The sealing adhesive process of solar photovoltaic cell panel |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106876509A (en) * | 2017-04-11 | 2017-06-20 | 成都步共享科技有限公司 | A kind of bicycle power consumption pond plate |
| CN109830543A (en) * | 2019-01-31 | 2019-05-31 | 光之科技发展(昆山)有限公司 | A kind of photovoltaic building materials and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1825633A (en) * | 2006-03-16 | 2006-08-30 | 常熟市飞宇新能源科技有限公司 | Sealing technique for solar photo voltaic battery plate |
| CN101548391A (en) * | 2005-11-04 | 2009-09-30 | 陶氏康宁公司 | Encapsulation of photovoltaic cells |
| JP2013145810A (en) * | 2012-01-13 | 2013-07-25 | Asahi Glass Co Ltd | Solar panel and solar panel system for vehicle |
-
2014
- 2014-06-03 CN CN201410243314.4A patent/CN103985790B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101548391A (en) * | 2005-11-04 | 2009-09-30 | 陶氏康宁公司 | Encapsulation of photovoltaic cells |
| CN1825633A (en) * | 2006-03-16 | 2006-08-30 | 常熟市飞宇新能源科技有限公司 | Sealing technique for solar photo voltaic battery plate |
| JP2013145810A (en) * | 2012-01-13 | 2013-07-25 | Asahi Glass Co Ltd | Solar panel and solar panel system for vehicle |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106876509A (en) * | 2017-04-11 | 2017-06-20 | 成都步共享科技有限公司 | A kind of bicycle power consumption pond plate |
| CN109830543A (en) * | 2019-01-31 | 2019-05-31 | 光之科技发展(昆山)有限公司 | A kind of photovoltaic building materials and preparation method thereof |
| CN109830543B (en) * | 2019-01-31 | 2021-08-10 | 光之科技发展(昆山)有限公司 | Photovoltaic building material and preparation method thereof |
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| Publication number | Publication date |
|---|---|
| CN103985790B (en) | 2016-05-25 |
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