CN103985781A - Crystalline silicon solar cell and manufacture method thereof - Google Patents
Crystalline silicon solar cell and manufacture method thereof Download PDFInfo
- Publication number
- CN103985781A CN103985781A CN201410039153.7A CN201410039153A CN103985781A CN 103985781 A CN103985781 A CN 103985781A CN 201410039153 A CN201410039153 A CN 201410039153A CN 103985781 A CN103985781 A CN 103985781A
- Authority
- CN
- China
- Prior art keywords
- semiconductor layer
- passivating film
- layer
- solar cell
- crystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 57
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 115
- 239000007772 electrode material Substances 0.000 claims abstract description 29
- 239000012535 impurity Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims description 58
- 229910052710 silicon Inorganic materials 0.000 claims description 53
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 52
- 239000010703 silicon Substances 0.000 claims description 51
- 230000008569 process Effects 0.000 claims description 23
- 238000010304 firing Methods 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 230000001413 cellular effect Effects 0.000 claims description 3
- 238000010276 construction Methods 0.000 claims description 3
- 230000008676 import Effects 0.000 claims description 2
- 238000000059 patterning Methods 0.000 abstract description 5
- 239000000969 carrier Substances 0.000 abstract 2
- 238000000206 photolithography Methods 0.000 abstract 1
- 238000005245 sintering Methods 0.000 abstract 1
- 230000006798 recombination Effects 0.000 description 16
- 238000005215 recombination Methods 0.000 description 13
- 238000009792 diffusion process Methods 0.000 description 12
- 230000000694 effects Effects 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 11
- 239000002800 charge carrier Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000006837 decompression Effects 0.000 description 4
- 239000000428 dust Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000035515 penetration Effects 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000005360 phosphosilicate glass Substances 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 235000011837 pasties Nutrition 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 235000011121 sodium hydroxide Nutrition 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- -1 silicon nitrides Chemical class 0.000 description 1
- GOLXNESZZPUPJE-UHFFFAOYSA-N spiromesifen Chemical compound CC1=CC(C)=CC(C)=C1C(C(O1)=O)=C(OC(=O)CC(C)(C)C)C11CCCC1 GOLXNESZZPUPJE-UHFFFAOYSA-N 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
The aim of the invention is to provide a crystalline silicon solar cell and a manufacture method thereof. Through the crystalline silicon, current carriers can be fully reduced in reunion speed; the crystalline silicon is low in manufacture cost. The second passive film which is 5 to 30 nm in film thickness is formed between a back face electrode layer and a first semiconductor layer. After sintering operation, the electrode material of the back face electrode layer is diffused to a first semiconductor layer through the second passive film, and therefore the first semiconductor layer is connected with the back face electrode layer in an electrically conductive manner, a first electric conduction type high-concentration semiconductor layer is formed between the second passive film and the first semiconductor layer, and the first electric conduction type high-concentration semiconductor layer is higher than the first semiconductor layer in first electric conduction type impurity concentration; thus, electrode patterning represented by photolithography is not needed (no manufacture cost increase is caused), and the current carriers can be fully lowered in reunion speed.
Description
Technical field
The present invention relates to a kind of crystalline silicon type solar cell and manufacture method thereof between semiconductor layer and backplate layer with passivating film.
Background technology
One of major technique theme of area of solar cell comprises the improvement of efficiency (photoelectric conversion efficiency).In order to improve the efficiency of solar cell, it is effective that great majority in the charge carrier by photogenerated (hole and electronics) are imported separately in corresponding electrode.This is equivalent to reduce the recombination velocity of hole and electronics, as realizing this object technology, in the past with regard to the known method that has formation back side potential barrier (back surface field (BSF:Back Surface Field)).
The formation of such back side potential barrier, the p+ type semiconductor layer that forms the p-type impurity of the high concentration of having adulterated by the rear side at p-type silicon substrate is carried out.Then, utilize the electric field producing between p-type semiconductor layer (p-type silicon substrate) and above-mentioned p+ type semiconductor layer, the electronics in the charge carrier that prevents from producing in p-type semiconductor layer arrives backplate, makes thus the recombination velocity of hole and electronics reduce.But, in related formation, due to the residual recombination center of the rear side at p-type silicon substrate, so be difficult to make recombination velocity fully to reduce.
Prior art document
Patent documentation
Patent documentation 1: TOHKEMY 2012-33757 communique
Patent documentation 2: Japanese kokai publication hei 9-45945 communique
Summary of the invention
As the technology for recombination velocity is further reduced, in patent documentation 1 and patent documentation 2, adopt following technology: between p-type silicon substrate and backplate, form passivating back film (for example using the film of silicon nitride as staple), by this passivating back film, the technology of dangling bonds terminal of the silicon atom of recombination center will be become.
But in this technology, because above-mentioned passivating back film is dielectric film, so in order to make p-type silicon substrate and backplate conducting, need to utilize the method for photoetching process representative by backplate patterning, the manufacturing cost of solar cell increases.
The present invention proposes in view of above-mentioned problem, and its object is, provides a kind of recombination velocity that makes fully to reduce crystalline silicon type solar cell and the manufacture method thereof that can manufacture at an easy rate simultaneously.
In order to solve above-mentioned problem, the invention of technical scheme 1 is a kind of crystalline silicon type solar cell,
It possesses: the 2nd semiconductor layer of the 1st semiconductor layer of backplate layer, the 1st conductivity type, the 2nd conductivity type, the 1st passivating film and surface electrode is stacked gradually from the 2nd interarea side of the opposition side of the 1st interarea of sensitive side and the cellular construction that forms,
It is characterized in that,
Between described backplate layer and described the 1st semiconductor layer, form the 2nd passivating film of the thickness with 5～30nm,
The electrode material of described backplate layer diffuses to described the 1st semiconductor layer by described the 2nd passivating film, make thus described the 1st semiconductor layer and the conducting of described backplate layer, and between described the 2nd passivating film and described the 1st semiconductor layer, form the high concentration semiconductor layer have higher than the 1st conductivity type of the 1st conductive-type impurity concentration of described the 1st semiconductor layer.
The invention of technical scheme 2 relates to the crystalline silicon type solar cell described in technical scheme 1, it is characterized in that, described the 1st passivating film has the light reflective of preventing.
The invention of technical scheme 3 relates to the crystalline silicon type solar cell described in technical scheme 1 or 2, it is characterized in that, described the 2nd passivating film is usingd silicon nitride as staple.
The invention of technical scheme 4 relates to the crystalline silicon type solar cell described in technical scheme 3, it is characterized in that, the refractive index of described the 2nd passivating film is more than 2.4.
The invention of technical scheme 5 is manufacture methods of a kind of crystalline silicon type solar cell, and it possesses following operation:
(a) pn knot forms operation, this operation is in two interareas of the silicon semiconductor substrate of the 1st conductivity type, from the 1st interarea side of sensitive surface side, import the impurity of the 2nd conductivity type, in described substrate, form thus the 1st semiconductor layer and the pn knot that is present in the 2nd semiconductor layer of the 2nd conductivity type on the 1st semiconductor layer of the 1st conductivity type;
(b) passivating film forms operation, and this operation forms the 1st passivating film on described the 1st interarea, and forms the 2nd passivating film on the 2nd interarea of described substrate;
(c) electrode forming process, this operation forms surface electrode layer on described the 1st passivating film, and forms backplate layer on described the 2nd passivating film; And
(d) firing process, this operation is burnt till described surface electrode layer and described backplate layer,
It is characterized in that,
In described (b) operation, the thickness of described the 2nd passivating film of film forming is in the scope at 5～30nm,
Described (d) operation possesses:
D-1) conducting operation, this operation heats described surface electrode layer, make the electrode material of this surface electrode layer run through a part for described the 1st passivating film and arrive described the 2nd semiconductor layer, by this arrival, make formed surface electrode and described the 2nd semiconductor layer conducting; And
D-2) diffusing procedure, this operation heats described backplate layer, make the electrode material of this backplate layer diffuse to described the 1st semiconductor layer by described the 2nd passivating film, make thus described the 1st semiconductor layer and the conducting of described backplate layer, and between described the 2nd passivating film and described the 1st semiconductor layer, form the high concentration semiconductor layer have higher than the 1st conductivity type of the 1st conductive-type impurity concentration of described the 1st semiconductor layer.
The invention of technical scheme 6 relates to the manufacture method of the crystalline silicon type solar cell described in technical scheme 5, it is characterized in that, described the 1st passivating film has the light reflective of preventing.
The invention of technical scheme 7 relates to the manufacture method of the crystalline silicon type solar cell described in technical scheme 5 or 6, it is characterized in that, described the 2nd passivating film is usingd silicon nitride as staple.
The invention of technical scheme 8 relates to the manufacture method of the crystalline silicon type solar cell described in technical scheme 7, it is characterized in that, the refractive index of described the 2nd passivating film is more than 2.4.
According to the invention of technical scheme 1～8, between electrode layer and the 1st semiconductor layer, form overleaf the 2nd passivating film of the thickness with 5～30nm.Then, the electrode material that is used to form backplate layer diffuses to the 1st semiconductor layer by the 2nd passivating film, make thus the 1st semiconductor layer and the conducting of backplate layer, and between the 2nd passivating film and the 1st semiconductor layer, form the high concentration semiconductor layer have higher than the 1st conductivity type of the 1st conductive-type impurity concentration of the 1st semiconductor layer.
Therefore so, by being used to form the diffusion of the electrode material of backplate layer, make the 1st semiconductor layer and the conducting of backplate layer, do not need method by photoetching process representative by backplate patterning, can reduce manufacturing cost.
In addition, because rear side at the 1st semiconductor layer forms the 2nd passivating film, so that the recombination velocity of charge carrier fully reduces, can improve photoelectric conversion efficiency (passivation effect).And, owing to forming the high concentration semiconductor layer of the 1st conductivity type between the 2nd passivating film and the 1st semiconductor layer, so utilize the electric field producing between the 1st semiconductor layer and the high concentration semiconductor layer of the 1st conductivity type, the recombination velocity of charge carrier is reduced, can improve photoelectric conversion efficiency.
Particularly, according to the invention of technical scheme 2 or 6, the 1st passivating film has the light reflective of preventing.Therefore, can be by the inside of the high efficiency absorption solar cell of light from solar cell external irradiation to the 1 passivating film.
Particularly, according to the invention of technical scheme 4 or 8, the 2nd passivating film is usingd silicon nitride as staple, and its refractive index is more than 2.4, the defect concentration at the interface of the 2nd passivating film and silicon substrate reduces thus, and internal resistance reduces, and therefore can improve photoelectric conversion efficiency.
The simple declaration of accompanying drawing
Fig. 1 is the profile of the related solar cell 1 of demonstration execution mode.
Fig. 2 is the flow chart of the manufacturing process of the related solar cell 1 of demonstration execution mode.
Fig. 3 is the profile of the manufacture process thing of the related solar cell 1 of demonstration execution mode.
Fig. 4 is the profile of the manufacture process thing of the related solar cell 1 of demonstration execution mode.
The profile that shows the manufacture process thing of the related solar cell of execution mode 1 on Fig. 5.
Fig. 6 is the profile of the manufacture process thing of the related solar cell 1 of demonstration execution mode.
Fig. 7 is the profile of the manufacture process thing of the related solar cell 1 of demonstration execution mode.
Wherein, being described as follows of Reference numeral:
1: solar cell; 10: silicon substrate; 11: alloy-layer; 12:p+ type semiconductor layer; 13:p type semiconductor layer; 14:n type semiconductor layer; 21: the 2 passivating films; 22: the 1 passivating films; 31: backplate layer; 32: surface electrode layer; 32a: surface electrode; D: thickness; S1: the 1st interarea; S2: the 2nd interarea; S3: sensitive surface; TX1, TX2: texture.
Embodiment
Below, with reference to accompanying drawing, embodiments of the present invention are elaborated.
< 1 execution mode >
The formation > of < 1.1 solar cells 1
Fig. 1 is the profile diagrammatically showing as the formation example of the solar cell of embodiments of the present invention.In addition, in Fig. 1 and later each figure, for easy understanding, as required, exaggeration or simply describe size or the number of each several part.
As shown in Figure 1, the solar cell 1 of present embodiment is crystalline silicon type solar cell, and it possesses backplate layer 31, the 2nd passivating film 21, silicon substrate 10, the 1st passivating film 22 and is formed at that surface electrode 32a on the 1st passivating film 22 stacks gradually from the opposition side (downside of Fig. 1) of sensitive side (upside of Fig. 1) and the cellular construction that forms.In Fig. 1, in the expansion of the left and right directions of solar cell 1, only demonstrate a part of region, but other regions of solar cell 1 also has same cross-section structure.
Silicon substrate 10 is to have as the 1st interarea S1 of the interarea of sensitive side and as the p-type silicon substrate of the 2nd interarea S2 of the interarea of the opposition side of the 1st interarea S1 (for example, the silicon substrate that comprises the p-type impurity such as boron), on its two interarea S1, S2, as texture TX1, TX2, be formed with the relief pattern (for example repeat patterns of small Pyramid) highly repeating for the periodicity two dimension about number μ m.It should be noted that, silicon substrate 10 can be used monocrystalline silicon substrate or polycrystalline silicon substrate, below, to using the situation of monocrystalline silicon substrate to describe.
In silicon substrate 10, being formed with the 1st interarea S1 of texture TX1, for example, by the thermal diffusion of N-shaped impurity (phosphorous oxychloride), form N-shaped semiconductor layer 14.
On the other hand, in silicon substrate 10, be formed with the 2nd interarea S2 of texture TX2, in backplate layer 31(present embodiment described later, using aluminium as main component) thermal diffusion, form silicon composition with the alloy-layer 11 of aluminium component and compare the p+ type semiconductor layer 12 that p-type impurity concentration is high with silicon substrate 10.
In addition, in the following description, in silicon substrate 10, the layer (is formed by the characteristic of silicon substrate 10 self layer) that does not belong to any one deck in alloy-layer 11, p+ type semiconductor layer 12 and N-shaped semiconductor layer 14 is called to p-type semiconductor layer 13.
Like this, the solar cell 1 of present embodiment has p-type semiconductor layer 13 and p+ type semiconductor layer 12, so on the border of these layers, produce electric field by back side potential barrier (BSF), can reduce near the recombination velocity of the charge carrier of backplate layer 31.
In the 1st interarea S1 side of silicon substrate 10, as the 1st passivating film 22, form and to there is the diaphragm (in the present embodiment, be using the film of silicon nitride as staple) that prevents light reflective.Therefore,, in the interarea of the 1st passivating film 22, the external irradiation from solar cell 1 can be taken in expeditiously to the inside of solar cell 1 to the light of the interarea (following, to be called " sensitive surface S3 ") of the opposition side of silicon substrate 10.
In the 2nd interarea S2 side of silicon substrate 10, as the 2nd passivating film 21, the thickness D of 5～30nm of take forms refractive index as more than 2.4 diaphragm (in the present embodiment, be using the film of silicon nitride as staple).
Surface electrode 32a is by the electrode that the mixing pasty state obtaining the 1st electrode material of the glass dust (glass frit) of metal (in the present embodiment, referring to silver powder) and low melting point and organic bond is formed.The 1st electrode material is coated in the part of face of opposition side of silicon substrate 10 of the 1st passivating film 22 to the pattern (Fig. 7) as surface electrode layer 32, burn till afterwards the structure of gained, a part for the 1st electrode material runs through part arrival N-shaped semiconductor layer 14(Fig. 1 of the 1st passivating film 22 thus).Its result, makes surface electrode 32a and 14 conductings of N-shaped semiconductor layer.
Backplate layer 31 is by the electrode that the mixing pasty state obtaining the 2nd electrode material of the glass dust (glass frit) of metal (in the present embodiment, referring to aluminium powder) and low melting point and organic bond is formed.The 2nd electrode material is coated on to the opposition side (Fig. 7) of the silicon substrate 10 of the 2nd passivating film 21, the structure of burning till afterwards gained, a part for the 2nd electrode material diffuses in silicon substrate 10 by the 2nd passivating film 21 sides thus.Its result, makes p-type semiconductor layer 13 and 31 conducting of backplate layer, forms alloy-layer 11 and p+ type semiconductor layer 12 simultaneously between the 2nd passivating film 21 and p-type semiconductor layer 13.
It should be noted that, in this embodiment, the 1st electrode material and the 2nd electrode material comprise different metals and form, but do not forbid using metal of the same race in the 1st and the 2nd electrode material.
As mentioned above, the solar cell 1 of present embodiment, p-type and N-shaped are corresponding with " the 1st conductivity type " and " the 2nd conductivity type " in the present invention, become thus the npp+ type solar cell that effect, p+ type semiconductor layer 12 that p-type semiconductor layer 13 and N-shaped semiconductor layer 14 play " the 1st semiconductor layer " and " the 2nd semiconductor layer " play the effect of " high concentration semiconductor layer ".
And, the solar cell 1 of present embodiment, not only film forming has the 1st passivating film 22 of sensitive surface S3 side, also film forming has and has the thickness of particular range and the 2nd passivating film 21 of refractive index, the technical role that the 2nd passivating film 21 is brought into play is large especially, but about its reason, after being described, the manufacture method of solar cell 1 describes in detail again.
The manufacture method > of < 1.2 solar cells 1
With reference to the profile of the solar cell 1 in the manufacture process shown in the manufacturing process shown in Fig. 2, Fig. 3～Fig. 7 and the profile of the solar cell 1 after the manufacture shown in Fig. 1, the manufacture method of the related solar cell 1 of present embodiment is described.
First, prepare p-type silicon substrate 10(Fig. 3), on the 1st interarea S1 and the 2nd interarea S2, form the texture (step ST1: texture forms operation) as the concaveconvex structure of anti-reflection structure.
When being solar cell, most substrates of being cut into slices by ingot bar that use are directly as silicon substrate 10.Now, pollution for the substrate surface removing the damage of the substrate surface that the wound of the scroll saw (ワ イ ヤ ー ソ ー) that uses etc. causes and caused by wafer slice operation in section, use the mixed liquor of the alkaline aqueous solutions such as potassium hydroxide, sodium hydrate aqueous solution or hydrofluoric acid and nitric acid etc., by about 10～20 μ m left and right of substrate surface etching.And, in order to remove the heavy metal classes such as iron that are attached to substrate surface, can add the operation that the mixed liquor with hydrochloric acid and hydrogen peroxide cleans.Afterwards, use the alkaline aqueous solutions such as potassium hydroxide, sodium hydrate aqueous solution etc., form texture TX1, TX2 as anti-reflection structure.Fig. 4 is the profile that this texture forms the silicon substrate 10 after operation.
Next, as shown in Figure 5, make N-shaped impurity (for example phosphorous oxychloride) in the surface heat diffusion of p-type silicon substrate 10, form the N-shaped semiconductor layer 14 that conductivity type is put upside down.Its result, at the interior formation p-type of silicon substrate 10 semiconductor layer 13 and the pn knot (step ST2:pn knot forms operation) that is formed at the N-shaped semiconductor layer 14 on p-type semiconductor layer 13.
At the pn of present embodiment knot, form in operation (step ST2), can adopt known various pn knot method, its exemplary is described.
First, whole at silicon substrate 10 forms N-shaped semiconductor layer 14.About the degree of depth of N-shaped semiconductor layer 14, can using and control as treatment conditions diffusion temperature or diffusion time.Then, with anti-etching dose (レ ジ ス ト) protection, be formed at the N-shaped semiconductor layer 14 of the 1st interarea S1 side of silicon substrate 10, carry out afterwards etch processes, make only residual N-shaped diffusion layer on the 1st interarea S1.With organic molten drug etc., remove for residual anti-etching dose after processing.
It should be noted that, in addition to the above methods, can also adopt following method: use spinner etc. is only coated with phosphorous liquid spreading material, for example PSG(phosphosilicate glass on the 1st interarea S1 of silicon substrate 10, the method of diffusion of Phospho-Silicate-Glass) etc., annealing under proper condition.
Next, as shown in Figure 6, in the 1st interarea S1 side of silicon substrate 10, form the 1st passivating film 22, in the 2nd interarea S2 side, form the 2nd passivating film 21(step ST3: passivating film forms operation).
In step ST3, first, as having, prevent reflexive diaphragm on N-shaped semiconductor layer 14, on the 1st interarea S1 of silicon substrate 10, for example form the 1st passivating film 22(, using the film of silicon nitride as staple).By the 1st passivating film 22, the surface reflectivity of 1 pair of incident light of solar cell reduces, and therefore can significantly increase the electric current of generation.
The 1st passivating film 22 utilizes the vacuum vapour deposition of decompression hot CVD method or plasma CVD method representative to form.Below, as the exemplary of the film build method of the 1st passivating film 22, to utilizing the situation of decompression hot CVD method film forming and utilizing the situation of plasma CVD method film forming to describe.
While adopting decompression hot CVD method, for example, take dichlorosilane gas and ammonia as raw material, in more than 700 ℃ temperature, heat.In addition, while utilizing plasma CVD method film forming, for example, as unstrpped gas, use the mist of single silane and ammonia, by plasma decomposes unstrpped gas, then carry out film forming in the temperature of 300～550 ℃.
And, in these film build methods, by controlling the supply ratio of unstrpped gas,, the treatment conditions such as pressure when the quantity delivered of unstrpped gas, heating-up temperature, heating time, film forming, can adjust membranous (thickness, the refractive index etc.) of the 1st passivating film 22.It should be noted that, compare with hot CVD, plasma CVD method is film formation at low temp, has the feature in the diaphragm that hydrogen contained in unstrpped gas is easily included in film forming.
Then, the 1st interarea S1 side formation the 1st passivating film 22 at silicon substrate 10, next, forms the 2nd passivating film 21(with reference to Fig. 6 in the 2nd interarea S2 side).Its result, utilizes silicon atom or the hydrogen atom of the 2nd passivating film 21, by the recombination center terminals such as dangling bonds of the 2nd interarea S2 side of silicon substrate 10, therefore can fully reduce recombination velocity, and photoelectric conversion efficiency improves (passivation effect).
The film build method of the 2nd passivating film 21 is the same with the film build method of the 1st passivating film 22, can adopt the vacuum vapour deposition of the representatives such as decompression hot CVD method or plasma CVD method.In addition, in the formation of the 2nd passivating film 21, also can utilize the plasma film forming apparatus of low inductance inside antenna (low inductive antenna (LIA:Low Inductance Antenna)) type.
Then, by controlling above-mentioned treatment conditions, can take the thickness D of 5～30nm in the 2nd interarea S2 side of silicon substrate 10, to form refractive index be the 2nd more than 2.4 passivating films 21.As an example controlling film forming treatment conditions, by the silicon improving in unstrpped gas, be the containing ratio of gas, can improve the refractive index of the diaphragm of film forming, by extending film formation time, can make the diaphragm thickening of film forming.
In addition, while applying heat treatment in the firing process as rear operation (step ST5), due to phenomenons such as hydrogen disengagings, the 1st passivating film 22 and the refractive index of the 2nd passivating film 21 change with comparing sometimes after film forming just.Now, consider in advance the membranous variation that the heat treatment in firing process causes, the film forming treatment conditions in corresponding deciding step ST3, can obtain desired membranous (thickness, refractive index etc.) thus.
In above-mentioned example, to forming 21 situation of the 2nd passivating film after the film forming at the 1st passivating film 22, be illustrated, but this film forming order can be contrary, also can carry out simultaneously.
Next, as shown in Figure 7, on the 1st passivating film 22, form surface electrode layer 32, on the 2nd passivating film 21, form backplate layer 31(step ST4: electrode forming process).
Particularly, adopt screen painting method, on the interarea of the opposition side of the silicon substrate 10 of the 1st passivating film 22, be coated with above-mentioned the 1st electrode material (electrode material of surface electrode layer 32) and become stratiform and make it dry, on the interarea of the opposition side of the silicon substrate 10 of the 2nd passivating film 21, be coated with above-mentioned the 2nd electrode material (electrode material of backplate layer 31) and become stratiform and make it dry.Its result, forms surface electrode layer 32 and backplate layer 31.
Then, form surface electrode layer 32 and backplate layer 31, next burn till (step ST5: firing process).In firing process, manufacture process thing several seconds of 650 ℃ of solar cells 1 that form in burning till above step ST1～step ST4～several minutes.
The 1st electrode material melting by burning till, runs through a part for the 1st passivating film 22 and arrives N-shaped semiconductor layer 14.Form thus surface electrode 32a, make surface electrode 32a and N-shaped semiconductor layer 14 conductings (step ST5A: conducting operation).
As mentioned above, the glass dust that comprises low melting point in the 1st electrode material (glass frit) by the melting of this glass dust (glass frit), can dissolve, run through the 1st passivating film 22 in conducting operation.
In addition, as shown in Figure 1, control the depth of penetration of the 1st electrode material in conducting operation, make it form the depth of penetration that arrives N-shaped semiconductor layer 14 and do not arrive p-type semiconductor layer 13.This depth of penetration is adjusted by controlling the treatment conditions such as firing temperature or firing time.
On the other hand, the 2nd electrode material melting by burning till, by the 2nd passivating film 21, diffuses to p-type semiconductor layer 13.This is that the very thin 5～30nm that reaches of thickness D due to the 2nd passivating film 21 of present embodiment causes.
Its result, by above-mentioned firing process, make backplate layer 31 and 13 conductings of p-type semiconductor layer, between the 2nd passivating film 21 and p-type semiconductor layer 13, form the alloy-layer 11 of silicon composition and aluminium component and there is the p+ type semiconductor layer 12(step ST5B higher than the p-type impurity concentration of p-type semiconductor layer 13: diffusing procedure) simultaneously.
Like this, in the manufacture of the solar cell 1 of present embodiment, do not need the patterning of the electrode of photoetching process representative, backplate layer 31 and 13 conductings of p-type semiconductor layer, therefore can reduce manufacturing cost.
In addition, because the 2nd interarea S2 side at silicon substrate 10 is formed with the 2nd passivating film, so that the recombination velocity of charge carrier fully reduces, can improve photoelectric conversion efficiency (passivation effect).In order effectively to bring into play this passivation effect, at least with thickness D more than 5nm, form the 2nd passivating film 21.
In addition, between the 2nd passivating film and p-type semiconductor layer 13, by take the diffusion of the backplate layer 31 that aluminium is main component, form p+ type semiconductor layer 12, therefore utilize the electric field producing between p-type semiconductor layer 13 and p+ type semiconductor layer 12, the recombination velocity of charge carrier reduces, and can further improve photoelectric conversion efficiency (BSF effect).
It should be noted that, as shown in Figure 1, control the diffusion depth of the 2nd electrode material in diffusing procedure, make it form the diffusion depth that arrives p-type semiconductor layer 13 and do not arrive N-shaped semiconductor layer 14.This diffusion depth is the same with the above-mentioned depth of penetration, by controlling the treatment conditions such as firing temperature or firing time, adjusts.That is, the treatment conditions of firing process are set according to the treatment conditions in above-mentioned conducting operation and the treatment conditions in above-mentioned diffusing procedure.
By the manufacturing process of step ST1 described above～step ST5, can manufacture the solar cell 1 of present embodiment.
The advantage > of the solar cell 1 of < 1.3 execution modes
(1) as mentioned above,, in the solar cell 1 of present embodiment, between electrode layer 31 and p-type semiconductor layer 13, form overleaf the 2nd passivating film 21 of the thickness D with 5～30nm.Like this, due to the very thin 5～30nm that reaches of the 2nd passivating film 21, so the 2nd electrode material (being used to form the electrode material of backplate layer 31), by the 2nd passivating film 21, diffuses to p-type semiconductor layer 13, p-type semiconductor layer 13 and backplate layer 31 are realized and conducted.Therefore, do not need the patterning of the backplate of photoetching process representative, can reduce manufacturing cost.
(2) in addition, because the 2nd interarea S2 side at p-type semiconductor layer 13 forms the 2nd passivating film 21, so that the recombination velocity of charge carrier fully reduces, can improve photoelectric conversion efficiency (passivation effect).Particularly, the 2nd passivating film 21 of present embodiment, is to contain more than chemical theory value (Si:N=3:4, chemical formula Si
3n
4, refractive index is 2.05) the refractive index of silicon composition be more than 2.4 silicon nitrides, therefore the 2nd passivating film 21 reduces with the defect concentration at the interface of silicon substrate 10, internal resistance reduces, so can improve photoelectric conversion efficiency.In addition, the thickness D of the 2nd passivating film 21 of present embodiment is more than 5nm, has guaranteed the thickness of the minimum of performance passivation effect.
(3) in addition, owing to forming p+ type semiconductor layer 12 between the 2nd passivating film 21 and p-type semiconductor layer 13, therefore utilize the electric field producing between p-type semiconductor layer 13 and the p+ type semiconductor layer 12 of the 1st conductivity type, the recombination velocity of charge carrier is reduced, can improve photoelectric conversion efficiency (BSF effect).
(4) in addition, the 1st passivating film 22 has the light reflective of preventing.Therefore, the external irradiation from solar cell 1 can be taken in expeditiously to the inside of solar cell 1 to the light of sensitive surface S3.
(5) in addition,, in the solar cell 1 of present embodiment, overleaf between electrode layer 31 and silicon substrate 10, it is the more than 2.4 thin dielectrics of the 2nd passivating film 21(that the thickness D of 5～30nm of take forms refractive index).Therefore, wait in expectation and take in light in solar cell 1 at the 2nd passivating film 21 and silicon substrate 10(alloy-layer 11 by sensitive surface S3) interface by plasma generation Mie scattering.When the refractive index of the 2nd passivating film 21 is high, this dispersion effect is remarkable, therefore as in the present embodiment, and by using the 2nd passivating film 21 of high index of refraction (refractive index is more than 2.4), the sealing effect of the light in solar cell 1 improves, and can improve photoelectric conversion efficiency.
< 2 variation >
Above, embodiments of the present invention are illustrated, but as long as this invention does not depart from its purport, except foregoing, can carry out various changes.
The solar cell of polysilicon type in the above-described embodiment, the solar cell 1 of monocrystalline silicon type is illustrated, even but also can be applied the present invention.
In addition, in the above-described embodiment, to usining p-type, as the 1st conductivity type in the present invention, the N-shaped of usining, as the solar cell 1 of the 2nd conductivity type in the present invention, be illustrated, even but put upside down the solar cell of these conductivity types, also can apply the present invention.
In addition, in the above-described embodiment, the solar cell 1 that two of silicon substrate 10 interarea S1, S2 are formed with to texture TX1, TX2 is illustrated, but texture can only be formed at the one-sided interarea of silicon substrate 10, also can not form texture.
In addition, in the above-described embodiment, adopt silicon nitride as the 1st passivating film 22 and the 2nd passivating film 21, but be not limited to this.For example, can adopt pellumina (aluminium oxide) to replace silicon nitride film 30.
In addition, in the above-described embodiment, by this manufacturing process, form alloy-layer 11, but this is not necessary formation for the purpose of the present invention.
Claims (8)
1. a crystalline silicon type solar cell, it possesses: the 2nd semiconductor layer of the 1st semiconductor layer of backplate layer, the 1st conductivity type, the 2nd conductivity type, the 1st passivating film and surface electrode are stacked gradually from the 2nd interarea side of the opposition side of the 1st interarea of sensitive side and the cellular construction that forms
It is characterized in that,
Between described backplate layer and described the 1st semiconductor layer, form the 2nd passivating film of the thickness with 5～30nm,
The electrode material of described backplate layer diffuses to described the 1st semiconductor layer by described the 2nd passivating film, make thus described the 1st semiconductor layer and the conducting of described backplate layer, and between described the 2nd passivating film and described the 1st semiconductor layer, form the high concentration semiconductor layer have higher than the 1st conductivity type of the 1st conductive-type impurity concentration of described the 1st semiconductor layer.
2. crystalline silicon type solar cell according to claim 1, is characterized in that, described the 1st passivating film has the light reflective of preventing.
3. crystalline silicon type solar cell according to claim 1 and 2, is characterized in that, described the 2nd passivating film is usingd silicon nitride as staple.
4. crystalline silicon type solar cell according to claim 3, is characterized in that, the refractive index of described the 2nd passivating film is more than 2.4.
5. a manufacture method for crystalline silicon type solar cell, it possesses following operation:
(a) pn knot forms operation, this operation is in two interareas of the silicon semiconductor substrate of the 1st conductivity type, from the 1st interarea side of sensitive surface side, import the impurity of the 2nd conductivity type, in described substrate, form thus the 1st semiconductor layer and the pn knot that is present in the 2nd semiconductor layer of the 2nd conductivity type on the 1st semiconductor layer of the 1st conductivity type;
(b) passivating film forms operation, and this operation forms the 1st passivating film on described the 1st interarea, and forms the 2nd passivating film on the 2nd interarea of described substrate;
(c) electrode forming process, this operation forms surface electrode layer on described the 1st passivating film, and forms backplate layer on described the 2nd passivating film; And
(d) firing process, this operation is burnt till described surface electrode layer and described backplate layer,
It is characterized in that,
In described (b) operation, the thickness of described the 2nd passivating film of film forming is in the scope at 5～30nm,
Described (d) operation possesses:
D-1) conducting operation, this operation heats described surface electrode layer, make the electrode material of this surface electrode layer run through a part for described the 1st passivating film and arrive described the 2nd semiconductor layer, by this arrival, make formed surface electrode and described the 2nd semiconductor layer conducting; And
D-2) diffusing procedure, this operation heats described backplate layer, make the electrode material of this backplate layer diffuse to described the 1st semiconductor layer by described the 2nd passivating film, make thus described the 1st semiconductor layer and the conducting of described backplate layer, and between described the 2nd passivating film and described the 1st semiconductor layer, form the high concentration semiconductor layer have higher than the 1st conductivity type of the 1st conductive-type impurity concentration of described the 1st semiconductor layer.
6. the manufacture method of crystalline silicon type solar cell according to claim 5, is characterized in that, described the 1st passivating film has the light reflective of preventing.
7. according to the manufacture method of the crystalline silicon type solar cell described in claim 5 or 6, it is characterized in that, described the 2nd passivating film is usingd silicon nitride as staple.
8. the manufacture method of crystalline silicon type solar cell according to claim 7, is characterized in that, the refractive index of described the 2nd passivating film is more than 2.4.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-021978 | 2013-02-07 | ||
| JP2013021978A JP2014154656A (en) | 2013-02-07 | 2013-02-07 | Crystalline silicon solar cell, and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103985781A true CN103985781A (en) | 2014-08-13 |
Family
ID=51277680
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410039153.7A Pending CN103985781A (en) | 2013-02-07 | 2014-01-27 | Crystalline silicon solar cell and manufacture method thereof |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2014154656A (en) |
| KR (1) | KR20140101287A (en) |
| CN (1) | CN103985781A (en) |
| TW (1) | TW201432927A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110073498A (en) * | 2016-11-07 | 2019-07-30 | 信越化学工业株式会社 | The manufacturing method of high photoelectricity conversion efficiency solar battery and high photoelectricity conversion efficiency solar battery |
| CN113785405A (en) * | 2019-03-13 | 2021-12-10 | 东洋铝株式会社 | Method for manufacturing back contact type solar cell unit |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016197651A (en) * | 2015-04-03 | 2016-11-24 | 株式会社島津製作所 | Thin film and forming method of the same |
| JP6539010B1 (en) * | 2017-11-30 | 2019-07-03 | 京セラ株式会社 | Solar cell element |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006129444A1 (en) * | 2005-05-31 | 2006-12-07 | Naoetsu Electronics Co., Ltd. | Solar cell element and method for fabricating same |
| CN101022135A (en) * | 2007-02-09 | 2007-08-22 | 江苏艾德太阳能科技有限公司 | Silicon solar battery antireflective thin film |
| CN101546790A (en) * | 2009-04-24 | 2009-09-30 | 中山大学 | Method for preparing point contact electrode at back of solar cell by utilizing laser induced thermit reaction |
| US20100098840A1 (en) * | 2008-10-22 | 2010-04-22 | Industrial Technology Research Institute | Method of manufacturing back electrode of silicon bulk solar cell |
| CN101785113A (en) * | 2007-08-29 | 2010-07-21 | 费罗公司 | Thick film pastes for fire through applications in solar cells |
| CN101853899A (en) * | 2010-03-31 | 2010-10-06 | 晶澳(扬州)太阳能光伏工程有限公司 | Method for preparing solar cell by using local area back field |
| CN102254960A (en) * | 2011-07-18 | 2011-11-23 | 中国科学院宁波材料技术与工程研究所 | Passivation layer for p-type silicon surface of crystalline silicon solar cell and preparation method thereof |
| CN102315284A (en) * | 2011-07-04 | 2012-01-11 | 常州天合光能有限公司 | Cell structure capable of realizing simultaneous passivation of P-type and N-type doped layers by using laminated film and method thereof |
| WO2012008436A1 (en) * | 2010-07-15 | 2012-01-19 | 信越化学工業株式会社 | Method for producing solar cell and film-producing device |
| CN102738304A (en) * | 2012-06-25 | 2012-10-17 | 晶澳（扬州）太阳能科技有限公司 | Method for manufacturing back electrode of crystalline silicon solar cell by using local aluminum back surface field structure |
-
2013
- 2013-02-07 JP JP2013021978A patent/JP2014154656A/en active Pending
- 2013-12-11 TW TW102145672A patent/TW201432927A/en unknown
-
2014
- 2014-01-06 KR KR1020140001180A patent/KR20140101287A/en active Search and Examination
- 2014-01-27 CN CN201410039153.7A patent/CN103985781A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006129444A1 (en) * | 2005-05-31 | 2006-12-07 | Naoetsu Electronics Co., Ltd. | Solar cell element and method for fabricating same |
| CN101022135A (en) * | 2007-02-09 | 2007-08-22 | 江苏艾德太阳能科技有限公司 | Silicon solar battery antireflective thin film |
| CN101785113A (en) * | 2007-08-29 | 2010-07-21 | 费罗公司 | Thick film pastes for fire through applications in solar cells |
| US20100098840A1 (en) * | 2008-10-22 | 2010-04-22 | Industrial Technology Research Institute | Method of manufacturing back electrode of silicon bulk solar cell |
| CN101546790A (en) * | 2009-04-24 | 2009-09-30 | 中山大学 | Method for preparing point contact electrode at back of solar cell by utilizing laser induced thermit reaction |
| CN101853899A (en) * | 2010-03-31 | 2010-10-06 | 晶澳(扬州)太阳能光伏工程有限公司 | Method for preparing solar cell by using local area back field |
| WO2012008436A1 (en) * | 2010-07-15 | 2012-01-19 | 信越化学工業株式会社 | Method for producing solar cell and film-producing device |
| CN102315284A (en) * | 2011-07-04 | 2012-01-11 | 常州天合光能有限公司 | Cell structure capable of realizing simultaneous passivation of P-type and N-type doped layers by using laminated film and method thereof |
| CN102254960A (en) * | 2011-07-18 | 2011-11-23 | 中国科学院宁波材料技术与工程研究所 | Passivation layer for p-type silicon surface of crystalline silicon solar cell and preparation method thereof |
| CN102738304A (en) * | 2012-06-25 | 2012-10-17 | 晶澳（扬州）太阳能科技有限公司 | Method for manufacturing back electrode of crystalline silicon solar cell by using local aluminum back surface field structure |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110073498A (en) * | 2016-11-07 | 2019-07-30 | 信越化学工业株式会社 | The manufacturing method of high photoelectricity conversion efficiency solar battery and high photoelectricity conversion efficiency solar battery |
| US11631779B2 (en) | 2016-11-07 | 2023-04-18 | Shin-Etsu Chemical Co., Ltd. | Solar cell with high photoelectric conversion efficiency and method for manufacturing solar cell with high photoelectric conversion efficiency |
| CN113785405A (en) * | 2019-03-13 | 2021-12-10 | 东洋铝株式会社 | Method for manufacturing back contact type solar cell unit |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201432927A (en) | 2014-08-16 |
| KR20140101287A (en) | 2014-08-19 |
| JP2014154656A (en) | 2014-08-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9178086B2 (en) | Method for fabricating back-contact type solar cell | |
| TWI550890B (en) | Solar cell and method of manufacturing the same | |
| JP6392385B2 (en) | Manufacturing method of solar cell | |
| CN109346536A (en) | A kind of contact passivation crystal silicon solar energy battery structure and preparation method | |
| US9685581B2 (en) | Manufacturing method of solar cell | |
| CN108963013A (en) | Solar battery and its manufacturing method | |
| CN103985781A (en) | Crystalline silicon solar cell and manufacture method thereof | |
| JP5756352B2 (en) | Manufacturing method of back electrode type solar cell | |
| CN111599898A (en) | Method for manufacturing crystalline silicon solar cell and crystalline silicon solar cell | |
| TWI594452B (en) | Solar cell emitter region fabrication using n-type doped silicon nano-particles | |
| CN103681971A (en) | Preparation method of N type back knot solar cell | |
| KR20160061409A (en) | Method for producing a solar cell | |
| JP2011009754A (en) | Method of manufacturing solar cell | |
| KR20100068834A (en) | Manufacturing method of solar cell | |
| KR101065384B1 (en) | Solar cell and fabrication method thereof | |
| JP2003101055A (en) | Method for manufacturing solar battery | |
| TWI573286B (en) | Method of manufacturing solar cell | |
| KR100995654B1 (en) | Solar cell and method for manufacturing the same | |
| WO2015083453A1 (en) | Solar cell manufacturing method | |
| US20140230889A1 (en) | Solar cell, method for manufacturing the same and solar cell module | |
| JP2015167260A (en) | Back surface electrode type solar battery and manufacturing method for the same | |
| TWI717930B (en) | Silicon-based solar cell and method of manufacturing the same | |
| TWI481060B (en) | Method for manufacturing solar cell | |
| KR101065592B1 (en) | Method of manufacturing a solar cell | |
| TWI459575B (en) | Method for fabricating solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C53 | Correction of patent of invention or patent application | ||
| CB02 | Change of applicant information |
Address after: Kyoto City, Kyoto Prefecture, Japan Applicant after: DAINIPPON SCREEN MFG Address before: Kyoto City, Kyoto Prefecture, Japan Applicant before: Dainippon Screen Mfg. Co., Ltd. |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: DAINIPPON SCREEN MFG. CO., LTD. TO: SCREEN GROUP CO., LTD. |
|
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140813 |